CN117687140A - 用于线栅偏振器的制造技术 - Google Patents

用于线栅偏振器的制造技术 Download PDF

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CN117687140A
CN117687140A CN202211072925.8A CN202211072925A CN117687140A CN 117687140 A CN117687140 A CN 117687140A CN 202211072925 A CN202211072925 A CN 202211072925A CN 117687140 A CN117687140 A CN 117687140A
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cladding
wire grid
metal
layer
dielectric
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姚俊杰
张建英
周孝莲
贾旭
林磊
于光龙
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II VI Delaware Inc
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II VI Delaware Inc
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3025Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3058Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state comprising electrically conductive elements, e.g. wire grids, conductive particles
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    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
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    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
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    • C03C17/3602Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
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    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
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    • C03C17/3644Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
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    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
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Abstract

本申请涉及用于线栅偏振器的制造技术。提出的用于偏振吸收线栅偏振器的制造技术避免了对蚀刻穿过材料的多层堆叠以形成栅格结构的需求。初始的反射金属层和介电缓冲层以常规方式被图案化和蚀刻,以产生期望的栅格拓扑结构。然后,通过首先用偏振吸收金属包覆图案化的介电材料的顶部表面,使用小角度包覆工艺来完成制造工艺。第二包覆工艺用于用介电包层材料覆盖所产生的金属包覆层。在包覆源和线栅结构之间保持小入射角确保栅格的顶部部分被适当地覆盖以产生期望的多层线配置。

Description

用于线栅偏振器的制造技术
技术领域
公开了一种制造如在光学系统中使用的线栅偏振器(wire grid polarizer)的方法,并且特别是一种制造具有至少一个为偏振吸收金属的部件的线栅偏振器的方法。
背景
线栅偏振器用于将入射光波分裂成一对相互垂直的偏振态,偏振态中的一个被透射,并且另一个被反射(或者可能被吸收)。这种类型的偏振器已知表现出高的消光比、强的环境适应性和低的波长灵敏度。此外,线栅偏振器已知能够在大的入射角、光谱范围和操作温度范围内实现入射光波的高透射率和高对比度。因此,这些装置已经发现了多种用途,包括但不限于偏振分束器、显示装置和图像传感器。
在偏振吸收线栅偏振器的特定情况下,需要交替的介电材料和金属材料的多层结构,其中金属层中的一个金属层用于吸收传播光波的不想要的偏振态。在常规的制造技术中,多个层被依次沉积在基底上,其中然后对多层布置进行图案化和蚀刻以形成必要的栅格配置。存在与蚀刻穿过不同组成的材料(即,介电材料相对于金属)相关的困难,这些困难已知在这样的包括交替的金属层和介电层的偏振吸收线栅偏振器的情况下影响产品产量和生产成本。
概述
提出了一种用于偏振吸收线栅偏振器的制造技术,该制造技术避免了对蚀刻穿过材料的多层堆叠以形成线栅结构的需求。替代地,建议图案化并且蚀刻一对初始的金属层和介电层,以产生期望的栅格拓扑结构。然后使用包覆工艺以完成制造工艺。特别地,小角度包覆工艺用于首先用金属材料(被选择以吸收不想要的偏振态)包覆图案化的介电材料,而第二包覆工艺用于用第二介电材料(被用作多层结构中的包层(cladding layer))包覆形成的金属。
小角度包覆工艺可以使用若干种已知技术中的一种,诸如溅射沉积工艺或真空蒸发工艺。被制造的线栅结构相对于包覆源定向,使得包覆材料以期望的“小”角度到达线栅结构,例如以不大于约10°的角度到达线栅结构。保持小入射角确保了包覆材料覆盖线栅结构的顶部部分。
所公开的工艺的示例性实施方案可以采取制造线栅偏振器的方法的形式,所述方法包括以下步骤:提供光学透明基底,所述光学透明基底具有顶部主表面;沉积反射金属层以覆盖光学透明基底的顶部主表面;沉积介电缓冲材料层以覆盖沉积的反射金属层;对介电缓冲材料层进行图案化以界定选定的线栅图案;蚀刻反射金属层和介电缓冲材料层的组合,以去除由对材料进行图案化而暴露的区域,并且产生多个线栅短截线(stub);用偏振吸收金属材料包覆所述多个线栅短截线中的每个线栅短截线的顶部部分,在每个线栅短截线上产生金属包覆的表面;以及用介电材料包覆在每个线栅短截线上的金属包覆的表面以形成介电包层作为线栅偏振器的顶部层。
在以下讨论的过程期间并且通过参考附图,所公开的方法的其他和另外的方面和实施方案将变得明显。
附图简述
现在参考附图,其中相同的数字在若干个视图中代表相同的部件:
图1是偏振吸收线栅偏振器的侧视图;
图2是图1的线栅偏振器的等距视图;
图3描绘了如在用于形成图1的线栅偏振器的现有技术工艺期间产生的结构,包括在光学透明材料的基底上沉积若干个层,并且在这些若干个层的顶部上包括图案化层;
图4描绘了如在所公开的形成偏振吸收线栅偏振器的方法中最初产生的结构,包括形成反射金属层和介电缓冲层;
图5示出了所公开的方法中的随后步骤,图示了蚀刻介电缓冲层以表现出期望的线栅拓扑结构;
图6图示了所公开的工艺中的下一步骤,其中使用蚀刻工艺将线栅图案转移至反射金属层;
图7示出了所公开的形成工艺中的随后步骤,特别是图示了使用小角度包覆工艺以在形成栅格的单独的线上沉积偏振吸收金属层;
图8描绘了所公开的形成工艺中的最后步骤,其被示出为用于用介电包层材料覆盖图8的单独的线的顶部的小角度包覆工艺;以及
图9示出了使用所公开的方法形成的偏振吸收金属线栅偏振。
详述
线栅偏振器具有多种用途,包括但不限于偏振分束器(例如,宽带分束器)、显示装置(诸如3D/LCD投影仪和交通工具抬头显示设备)和图像传感器(诸如用于生物医学应用的偏振成像)。图1是偏振吸收线栅偏振器10的切面侧视图,该偏振吸收线栅偏振器10包括设置在光学透明基底14上的多个平行的长形的线12。基底14可以包括玻璃、石英、熔融二氧化硅或类似物。图2是图1的线栅偏振器10的等距视图,清楚地示出了如在基底14上形成的多个线12的平行的长形的拓扑结构。参考图1和图2两者,示出了与线栅偏振器10的结构相关联的多种尺寸,包括每根线12i的宽度w和高度d。被称为“间距”并且示出为Λ的在相邻线12之间的中心到中心的间隔是实现非偏振入射光束的期望的偏振分裂的因素。实际上,重要的是很好地控制所有这些尺寸,以便提供具有高消光比并且跨过相对宽的感兴趣的波长范围可操作的偏振态之间的期望的分裂。
在产生偏振吸收线栅偏振器的这种情况下,线12包括交替的金属材料和介电材料的堆叠的多层形式,这是必要的,以便允许沿着不想要的偏振态传播的任何光以使该偏振态的任何进一步传播最小化的方式被吸收。特别地,线12被示出为包括由被介电缓冲体22覆盖的反射金属20形成的多层堆叠。在形成偏振吸收线栅偏振器时,偏振吸收金属24被设置在介电缓冲体22上,其中介电包层26被设置在金属24上作为堆叠的多层结构的顶部层。特别地,金属24包括偏振吸收材料,该偏振吸收材料被选择成吸收传播光束的一个偏振(例如,TE偏振)并且允许正交的偏振(例如,TM偏振)继续传播通过光学透明基底14。适合用作反射金属20和偏振吸收金属24的材料包括但不限于铝、银、铜、铬、锗、钛、铁和硅。介电缓冲体22和包层26的可能的材料选择包括金属氧化物,诸如SiO2、Ta2O3、Al2O3、MgF2及类似物。
图3描绘了通常用于形成偏振吸收线栅偏振器10的现有技术工艺。特别地,沉积上文描述的列举的材料中的每一种材料的连续层以完全包覆基底14的顶部主表面14S。即,首先沉积完整的反射金属层20L以覆盖基底14,随后沉积介电缓冲材料层22L,其中还形成金属偏振吸收层24L和介电包层26L以完全覆盖下面的结构。一旦形成所有这些层,界定期望的线栅布局的拓扑结构(根据间距、线的数目、宽度w及类似物,如图1和图2中所示)的图案化层被设置在包层26L上。在此之后,使用多步蚀刻工艺以去除单独的层的暴露的部分,其中由于金属层和介电层的交替布置,每种材料需要不同的蚀刻剂。即,用于去除包层26L的暴露的区域的蚀刻剂不能去除金属偏振吸收层24L等的暴露的区域。随着蚀刻的层的数目增加,已经发现可接受的装置的产量迅速降低,导致最终产品的成本增加。
本文公开了一种形成偏振吸收线栅偏振器的改进的工艺,该工艺消除了对进行直接影响产品产量的多个蚀刻步骤的需求。替代地,使用蚀刻和小角度包覆的组合来形成线栅拓扑结构。图4图示了所公开的工艺中的初始步骤,其具体涉及在基底14上形成金属反射层20L和介电缓冲层22L。介电缓冲层22L用作掩蔽层,用于图案化下面的金属。实际上,图案化层30随后被施加至缓冲层22L,其中使用标准光刻或纳米压印工艺(或本领域中熟知的任何其他合适的图案化工艺)将线栅图案转移到介电缓冲层22L中,产生如图5中示出的介电线区域22W。然后使用常规的蚀刻工艺以将介电线区域22W的栅格图案转移到下面的金属层20L中。该蚀刻步骤的结果在图6中示出,其中控制蚀刻工艺的持续时间以保持介电线区域22W的期望的厚度t。
一旦反射金属20和介电缓冲体22的组合已经如图6所示被图案化和蚀刻,就使用小角度包覆工艺来用偏振吸收金属层包覆每个初始的线结构,随后用介电包层包覆。图7图示了第一包覆工艺,使用源80以将合适的金属蒸气引导朝向包括双层反射金属区域20W和介电缓冲区域22W的线“短截线”。基底14相对于源80的定向被控制,使得金属蒸气以相对于线短截线(wire stubs)的顶部表面的法线相对小的角度α(有时被称为“掠射角”)被引导。作为该定向的结果,在缓冲区域22W的顶部部分上形成偏振吸收金属包覆区域24C。因为入射角α是小的,线短截线充当屏蔽并且防止金属蒸气完全包覆结构。优选地,保持不大于约10°的掠射角,以便使线短截线提供屏蔽能力。
一个示例性的包覆工艺可以采取溅射沉积工艺的形式(使用例如磁控溅射工艺),以产生用于包覆工艺的蒸气通量。可选择地,可以使用真空蒸发工艺来进行包覆;也可以使用本领域中已知的其他已知的沉积/包覆工艺。
一旦获得满意厚度的金属包覆区域24C,第二小角度包覆工艺开始,在该步骤中,将合适的介电包层材料的蒸气引导朝向所形成的结构。图8图示了工艺中的该步骤,其中介电包覆区域26C被示出为沉积以包覆先前形成的金属包覆区域24C。再次,使用小入射角α防止介电材料完全包覆单独的线。图9图示了如通过使用根据本公开内容的蚀刻和包覆的组合而形成的偏振吸收线栅偏振器10的最终结构。
总之,公开了一种用于制造偏振吸收型金属线栅偏振器的方法。该制造方法包括使用诸如溅射沉积工艺或真空蒸发包覆工艺的小角度包覆工艺来形成金属吸收层和介电包层,其中控制包覆源和基底之间的定向以提供包覆线短截线所必要的小入射角。所公开的方法避免了如现有技术中所要求的蚀刻多种交替的金属膜和介电膜的工艺(从而降低了生产成本),同时还提高了产品产量。
虽然已经参考示例性的实施方案和材料描述并且特别示出了所公开的制造方法,但本领域普通技术人员将理解,在不偏离所公开的方法的原理的情况下,可以进行包括材料选择、包覆工艺、入射角等的多种细节变化。实际上,示例性的实施方案应当被认为仅是说明性的,并且不是为了限制如在此所附的权利要求的范围的目的。

Claims (10)

1.一种制造偏振吸收线栅偏振器的方法,包括:
提供光学透明基底,所述光学透明基底具有顶部主表面;
沉积反射金属层以覆盖所述光学透明基底的所述顶部主表面;
沉积介电缓冲材料层以覆盖经沉积的反射金属层;
对经沉积的介电缓冲材料层和所述反射金属层的组合进行图案化和蚀刻以产生多个线栅短截线;
使用小入射角,用偏振吸收金属材料包覆所述多个线栅短截线中的每个线栅短截线的顶部部分,在每个线栅短截线上产生金属包覆的表面;以及
使用小入射角,用介电材料包覆在每个线栅短截线上的所述金属包覆的表面,以形成介电包层作为所述线栅偏振器的顶部层。
2.根据权利要求1所述的方法,其中所述小入射角不大于约10°。
3.根据权利要求1所述的方法,其中所述包覆步骤利用溅射沉积工艺。
4.根据权利要求1所述的方法,其中所述包覆步骤利用真空蒸发包覆工艺。
5.根据权利要求1所述的方法,其中在沉积反射金属层的步骤中,所述反射金属选自由以下组成的组:铝、银、铜、铬、锗、钛、铁和硅。
6.根据权利要求1所述的方法,其中在沉积介电缓冲材料层的步骤中,所述介电缓冲材料包括金属氧化物。
7.根据权利要求6所述的方法,其中所述金属氧化物选自由以下组成的组:SiO2、Ta2O3、Al2O3和MgF2
8.根据权利要求1所述的方法,其中在用偏振吸收金属包覆所述多个线短截线的步骤中,所述偏振吸收金属选自由以下组成的组:铝、银、铜、铬、锗、钛、铁和硅。
9.根据权利要求1所述的方法,其中在用介电包层材料包覆金属包覆的线短截线的步骤中,所述介电包层材料包括金属氧化物。
10.根据权利要求9所述的方法,其中所述金属氧化物选自由以下组成的组:SiO2、Ta2O3、Al2O3和MgF2
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