CN117542727A - 一种碳化硅栅极氧化层的制备方法及半导体结构 - Google Patents
一种碳化硅栅极氧化层的制备方法及半导体结构 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 130
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 130
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 230000007547 defect Effects 0.000 claims abstract description 80
- 239000007789 gas Substances 0.000 claims abstract description 57
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 238000002161 passivation Methods 0.000 claims abstract description 13
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 8
- 150000001721 carbon Chemical class 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 230000000694 effects Effects 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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Abstract
本发明涉及半导体技术领域,特别涉及一种碳化硅栅极氧化层的制备方法及半导体结构。利用含NH3气体预先处理所述碳化硅衬底的缺陷,一方面,提前消除所述碳化硅衬底表面的硅悬挂键,降低所述碳化硅衬底表面的硅原子活性,从而有效抑制在后续制备栅氧层过程中,硅悬挂键与碳、氧元素形成浅能级缺陷;另一方面,有效抑制和钝化所述碳化硅衬底近表面的碳原子或碳团簇缺陷,弥补了后续N2O钝化时,由于氧化层阻隔达不到碳相关缺陷的位置,使得氮钝化所述碳化硅衬底更彻底,从而有效地降低所述碳化硅衬底的浅能级缺陷,大幅度提高碳化硅功率器件的性能。
Description
技术领域
本发明涉及半导体技术领域,特别涉及一种碳化硅栅极氧化层的制备方法及半导体结构。
背景技术
SiC外延层上生长的SiO2层质量(也称为栅氧质量),栅氧质量是SiC MOSFET功率器件性能优劣的关键要素之一,因此如何有效降低SiC/SiO2界面及近界面缺陷是目前工业界重点关注的问题之一。
目前主流SiC栅氧工艺主要分两步,第一步高温氧化或者低压化学气相沉积法形成栅氧,步使用NO或者N2O退火(也称氮钝化过程)从而降低栅氧缺陷,但现有技术制备的栅氧存在缺陷,直接影响SiC MOSFET功率器件的性能。
发明内容
本发明为解决上述技术问题,提供一种碳化硅栅极氧化层的制备方法,包括:
提供具有缺陷的碳化硅衬底;
利用含NH3气体钝化所述碳化硅衬底的缺陷;
在NH3钝化后的所述碳化硅衬底表面制备栅氧层;
氮钝化所述栅氧层,获得表面具有栅极氧化层的碳化硅衬底。
可选的,所述碳化硅衬底的缺陷包括硅悬挂键缺陷和碳原子或碳团簇缺陷。
可选的,所述硅悬挂键缺陷位于所述碳化硅衬底的表面,所述碳原子或碳团簇缺陷位于所述碳化硅衬底的近表面处。
可选的,利用含NH3气体钝化所述碳化硅衬底的步骤包括:
将所述碳化硅衬底置于反应容器中;
通入所述含NH3气体,所述含NH3气体保持于所述碳化硅衬底的表面;
保持所述含NH3气体一定的通入时间,钝化所述碳化硅衬底中的缺陷。
可选的,所述含NH3气体中NH3的体积范围为20%~30%,通入所述含NH3气体的流速范围为1.5L/min~1.7L/min。
可选的,所述含NH3气体中的载气为氩气、氦气中的一种。
可选的,保持所述含NH3气体一定的通入时间的范围为25min~30min,所述反应容器内的温度范围为600℃~610℃,所述反应容器内的压强范围为100kPa~105kPa。
可选的,制备所述栅氧层采用高温氧化法制备。
可选的,氮钝化所述栅氧层采用NO、N2O其中的一种或两种,所述氮钝化的温度范围为1245℃~1255℃。
本发明还提供一种半导体结构,采用上述的一种碳化硅栅极氧化层的制备方法制备。
综上所述,本发明的优点及有益效果为:
本发明提供一种碳化硅栅极氧化层的制备方法及半导体结构。利用含NH3气体钝化所述碳化硅衬底的缺陷,在NH3钝化后的所述碳化硅衬底表面制备栅氧层,氮钝化所述栅氧层,获得表面具有栅极氧化层的碳化硅衬底,其中,利用含NH3气体钝化所述碳化硅衬底的缺陷,避免所述碳化硅衬底的缺陷在后续制备栅氧层时与其他元素产生相关的能级缺陷。
本发明利用含NH3气体预先处理所述碳化硅衬底的缺陷,一方面,提前消除所述碳化硅衬底表面的硅悬挂键,降低所述碳化硅衬底表面的硅原子活性,从而有效抑制在后续制备栅氧层过程中,硅悬挂键与碳、氧元素形成浅能级缺陷;另一方面,含NH3气体中的N元素附着在所述碳化硅衬底表面,在后续工艺中,附着在所述碳化硅衬底表面的N元素优先与栅氧制备过程中产生的碳相关缺陷接触,提前将所述碳化硅衬底近表面的碳原子或碳团簇缺陷进行抑制和钝化,并且附着在所述碳化硅衬底表面的氮元素直接与所述碳化硅衬底表面接触,使得所述N元素更容易与深层次的碳相关缺陷接触,弥补了后续N2O钝化时,由于二氧化硅氧化层阻隔导致的氮钝化达不到碳相关缺陷的位置,使得氮钝化所述碳化硅衬底更彻底,从而有效地降低所述碳化硅衬底的浅能级缺陷,大幅度提高碳化硅功率器件的性能。
附图说明
图1为本发明实施例中的一种碳化硅栅极氧化层的制备方法的示意图。
具体实施方式
碳化硅外延工艺不可避免地会在碳化硅的表面和近表面处形成硅悬挂键缺陷、碳原子或碳团簇缺陷,高温氧化或者低压化学气相沉积法形成的栅氧结构在SiC/SiO2界面和近界面处仍然存在硅和碳相关缺陷(即硅悬挂键缺陷、碳原子或碳团簇缺陷),又由于硅和碳相关缺陷主要位于碳化硅带隙中距离导带较近、能级较浅的位置,碳化硅外延层中的这些硅和碳相关浅能级缺陷的浓度高低直接影响碳化硅功率器件性能,本发明提供一种碳化硅栅极氧化层的制备方法,以提升栅氧质量。
为了便于本领域技术人员的理解,下面将结合具体实施例对本发明作进一步详细说明。
本发明提供一种碳化硅栅极氧化层的制备方法,如图1所示,包括:
步骤S10,提供具有缺陷的碳化硅衬底;
步骤S20,利用含NH3气体钝化所述碳化硅衬底的缺陷;
步骤S30,在NH3钝化后的所述碳化硅衬底表面制备栅氧层;
步骤S40,氮钝化所述栅氧层,获得表面具有栅极氧化层的碳化硅衬底。
具体的,执行步骤S10,提供具有缺陷的碳化硅衬底。
在本发明实施例中,所述缺陷包括硅悬挂键缺陷和碳原子或碳团簇缺陷。
在本发明实施例中,所述硅悬挂键缺陷位于所述碳化硅衬底的表面,所述碳原子或碳团簇缺陷位于所述碳化硅衬底的近表面处。
碳化硅外延工艺不可避免地会在碳化硅的表面和近表面处形成硅悬挂键缺陷、碳原子或碳团簇缺陷,硅和碳相关缺陷(即硅悬挂键缺陷、碳原子或碳团簇缺陷)主要位于碳化硅带隙中距离导带较近、能级较浅的位置,碳化硅外延层中的这些浅能级缺陷的浓度高低直接影响碳化硅功率器件性能。
执行步骤S20,利用含NH3气体钝化所述碳化硅衬底的缺陷。
在本发明实施例中,利用含NH3气体钝化所述碳化硅衬底的步骤包括:
将所述碳化硅衬底置于反应容器;
通入所述含NH3气体,所述含NH3气体保持于所述碳化硅衬底的表面;
保持所述含NH3气体一定的通入时间,钝化所述碳化硅衬底中的缺陷。
在本发明实施例中,所述含NH3气体中NH3的体积范围为20%~30%,通入所述含NH3气体的流速范围为1.5L/min~1.7L/min,在其他实施例中,根据具体情况确定。
在本发明实施例中,所述含NH3气体中的载气为氩气,在其他实施例中,所述含NH3气体中的载气为氦气。
在本发明实施例中,保持所述含NH3气体一定的通入时间的范围为25min~30min,所述反应容器内的温度范围为600℃~610℃,所述反应容器内的压强范围为100kPa~105kPa,在其他实施例中,保持所述含NH3气体一定的通入时间、所述反应容器内的温度、所述反应容器内的压强根据具体情况确定。
利用所述含NH3气体预先处理所述碳化硅衬底的缺陷,一方面,提前消除所述碳化硅衬底表面的硅悬挂键,降低所述碳化硅衬底表面的硅原子活性,从而有效抑制在后续制备栅氧层过程中,硅悬挂键与碳、氧元素形成浅能级缺陷;另一方面,含NH3气体中的N元素附着在所述碳化硅衬底表面,在后续工艺中,附着在所述碳化硅衬底表面的N元素优先与栅氧制备过程中产生的碳相关缺陷接触,提前将所述碳化硅衬底近表面的碳原子或碳团簇缺陷进行抑制和钝化,并且附着在所述碳化硅衬底表面的氮元素直接与所述碳化硅衬底表面接触,使得所述N元素更容易与深层次的碳相关缺陷接触,弥补了后续N2O钝化时,由于氧化层阻隔达不到碳相关缺陷的位置,使得氮钝化所述碳化硅衬底更彻底,从而有效地降低所述碳化硅衬底的浅能级缺陷,大幅度提高碳化硅功率器件的性能。
执行步骤S30,在NH3钝化后的所述碳化硅衬底表面制备栅氧层。
在本发明实施例中,所述栅氧层采用高温氧化法制备。
在其他实施例中,所述栅氧层采用低压热沉积法制备。
执行步骤S40,氮钝化所述栅氧层,获得表面具有栅极氧化层的碳化硅衬底。
在本发明实施例中,氮钝化所述栅氧层采用N2O,所述氮钝化的温度范围为1245℃~1255℃。
在本发明实施例中,氮钝化所述栅氧层采用N2O气体。
在其他实施例中,氮钝化所述栅氧层采用NO、N2O其中的一种或两种。
传统的栅极氧化层制备的过程中都是直接在碳化硅衬底上进行氧化,形成栅极氧化层,当栅极氧化层生长完成后,再针对碳相关缺陷对生长了栅极氧化层的碳化硅衬底进行氮钝化处理,导致碳化硅衬底和栅极氧化层界面间的硅相关缺陷仍然存在,并没有去除,仍然会影响栅极氧化层的界面质量;并且,由于栅极氧化层的阻隔,传统方法中的氮钝化过程的含氮气体达不到碳相关缺陷的位置,从而影响了氮钝化的效果,传统方法中的无法去除硅相关缺陷,也无法完全去除碳相关缺陷,硅和碳相关缺陷主要位于碳化硅带隙中距离导带较近、能级较浅的位置,又直接影响碳化硅功率器件的性能,导致功率器件的性能下降,本发明在形成栅极氧化层之前对所述碳化硅衬底的缺陷利用含NH3气体对所述碳化硅衬底的表面和近表面进行钝化处理,使得所述碳化硅衬底中的硅相关缺陷利用含NH3气体中的氢元素提前去除,含NH3气体中的氮元素附着在所述碳化硅衬底的表面,在制备栅氧时产生的碳相关缺陷提前去除,特别是距离碳化硅表面较深位置的碳相关缺陷也能被去除,弥补了后续N2O钝化时,由于氧化层阻隔达不到碳相关缺陷的位置,使得所述碳化硅衬底的缺陷处理的更彻底,从而降低栅极氧化层和碳化硅界面之间的能级缺陷密度,提升功率器件的性能。
本发明实施例还提供一种半导体结构,包括:采用上述的一种碳化硅栅极氧化层的制备方法制备。
在本发明实施例中,制备半导体结构的步骤包括:
步骤S101,提供具有缺陷的碳化硅衬底;
步骤S201,利用含NH3气体钝化所述碳化硅衬底的缺陷;
步骤S301,在NH3钝化后的所述碳化硅衬底表面制备栅氧层;
步骤S401,采用N2O钝化所述栅氧层,获得表面具有栅极氧化层的碳化硅衬底。
步骤S501,利用所述表面具有栅极氧化层的碳化硅衬底制备获得所述半导体结构。
对比例1:
一种不经过含NH3气体处理的半导体结构的制备步骤包括:
步骤S102,提供具有缺陷的碳化硅衬底;
步骤S202,采用高温氧化法在所述碳化硅衬底表面制备栅氧层;
步骤S302,采用N2O气体钝化所述栅氧层,获得表面具有栅极氧化层的碳化硅衬底;
步骤S402,利用所述具有栅极氧化层的碳化硅制备获得导体结构。
测试本发明实施例制备获得半导体结构与对比例1制备获得的半导体结构的界面态密度,对比例1制备获得的半导体结构的界面态密度为3.00×1011eV-1cm-2,本发明实施例制备获得半导体结构的界面态密度为1.00×1011eV-1cm-2,通过测试发现,经过NH3预先处理的碳化硅衬底制备的半导体结构的界面态密度更低,电学性能最优。
最后说明,任何依靠本发明装置结构以及所述实施例的技术方案,进行的部分或者全部技术特征的修改或者等同替换,所得到的本质不脱离本发明的相应技术方案,都属于本发明装置结构以及所述实施方案的专利范围。
Claims (10)
1.一种碳化硅栅极氧化层的制备方法,其特征在于,包括:
提供具有缺陷的碳化硅衬底;
利用含NH3气体钝化所述碳化硅衬底的缺陷;
在NH3钝化后的所述碳化硅衬底表面制备栅氧层;
氮钝化所述栅氧层,获得表面具有栅极氧化层的碳化硅衬底。
2.如权利要求1所述的一种碳化硅栅极氧化层的制备方法,其特征在于,所述碳化硅衬底的缺陷包括硅悬挂键缺陷和碳原子或碳团簇缺陷。
3.如权利要求2所述的一种碳化硅栅极氧化层的制备方法,其特征在于,所述硅悬挂键缺陷位于所述碳化硅衬底的表面,所述碳原子或碳团簇缺陷位于所述碳化硅衬底的近表面处。
4.如权利要求1所述的一种碳化硅栅极氧化层的制备方法,其特征在于,利用含NH3气体钝化所述碳化硅衬底的步骤包括:
将所述碳化硅衬底置于反应容器中;
通入所述含NH3气体,所述含NH3气体保持于所述碳化硅衬底的表面;
保持所述含NH3气体一定的通入时间,钝化所述碳化硅衬底中的缺陷。
5.如权利要求4所述的一种碳化硅栅极氧化层的制备方法,其特征在于,所述含NH3气体中NH3的体积范围为20%~30%,通入所述含NH3气体的流速范围为1.5L/min~1.7L/min。
6.如权利要求4所述的一种碳化硅栅极氧化层的制备方法,其特征在于,所述含NH3气体中的载气为氩气、氦气中的一种。
7.如权利要求4所述的一种碳化硅栅极氧化层的制备方法,其特征在于,保持所述含NH3气体一定的通入时间的范围为25min~30min,所述反应容器内的温度范围为600℃~610℃,所述反应容器内的压强范围为100kPa~105kPa。
8.如权利要求1所述的一种碳化硅栅极氧化层的制备方法,其特征在于,制备所述栅氧层采用高温氧化法制备。
9.如权利要求1所述的一种碳化硅栅极氧化层的制备方法,其特征在于,氮钝化所述栅氧层采用NO、N2O其中的一种或两种,所述氮钝化的温度范围为1245℃~1255℃。
10.一种半导体结构,其特征在于,采用权利要求1~9任意一项所述的一种碳化硅栅极氧化层的制备方法制备。
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