CN1175125C - 保护气罩设备 - Google Patents
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Abstract
一种气罩组件用于保护在化学汽相淀积系统中的喷射器的暴露表面。该气罩组件包括一个后壁,该后壁支承穿孔板以形成一通风系统。穿孔板借助端帽固定在位。一条管道向通风系统中供应气体。管道包括一个沿后壁延伸的伸展部并具有邻近后壁的弯头。管道包括沿伸展部和在弯头上的穿孔,以便形成进入通风系统和端部的基本均匀的气体流。
Description
有关的申请
本申请要求1999年5月21日提交的临时申请第60/135,362号的优先权,其全部公开内容在本说明书中用作参考。
技术领域
本发明一般涉及化学汽相淀积设备,更具体来说,涉及在化学汽相淀积过程中使用的保护气罩。
发明背景
化学汽相淀积(CVD)系统用于在基片如半导体片上形成薄而均匀的层或膜。在CVD处理过程中,基片暴露于一种或多种化学蒸汽如硅烷、phosphane、乙硼烷或类似物,以气态物质如氧气。这些气体混合并与其它气体和/或基片表面相互作用以形成需要的膜。需要的反应一般在高温如300-550℃下发生,基片和室被加热至对于选择的方法适当的温度。在许多包括半导体处理的应用场合中,膜的特性如纯度和厚度均匀性必须满足高质量标准。基片被设置在干净、隔离的反应室中以获得高质量的膜。CVD系统一般使用喷射器,喷射器将气态物质直接送至基片表面。排放系统从反应室除去反应过程中形成的废产物如未反应的气体及粉末。反应室必须定期清洁,以便清除随时间沉积在室的暴露表面上的膜,消除可能嵌入膜中或使膜的厚度均匀性变劣的颗粒污染源。
喷射口一般设置得离基片表面不到1英寸,例如1/8英寸至1/2英寸。由于喷射器和基片表面之间这种有限的间隙,喷射器表面在反应过程中会覆盖上产生的物质。为了减少在该区域中的积蓄量,一些CVD系统包括设置在喷射器和排放口前的保护罩。惰性的气体如氮气通过罩所承载的穿孔护板输送以降低物质在罩上积蓄的速率。在CVD反应室中的高温在穿孔护板上形成热应力,这在一段时间后会引起护板变形。这种变形会破坏氮气穿过护板的均匀流动及扰乱室内的气流,使部分护板不能免于沉积材料的积蓄。护板向反应室输送氮气的能力随着覆盖沉积物而进一步减小,从而需要卸下并清洗或更换罩。
美国专利第5,849,088号和第5,944,900号已公开了多种保护罩结构,这些专利的全部公开内容在本说明书中用作参考。这些描述提供了改善罩的性能的具体结构细节。具体来说,由于使用了这些发明构思,罩的使用寿命得以延长。这里构思中的一些已证明可改善膜的均匀性。
虽然这些专利所述的护罩可改善膜的均匀性,但是仍需进一步改善。例如,所述的护罩包括惰性气体管线,这些管线在罩的端部附近进入罩的通风系统,然后,向下延伸罩的长度至另一端。CVD系统结构一般需要使惰性气体管线延伸至罩、弯曲,然后沿其长度延伸,再次弯回并从组件伸出。一般来说,气体管线具有一系列孔,这些孔通常但又不是必须在管的弯头之间沿罩的长度均匀分布。这些孔不设置在拐弯区域中。虽然这种结构证明优于以前的结构,但是,管中的弯头在长度上并非为零,第一个孔设置在管再次变直处。这就导致在罩的端部气流量低,而且在该区域材料会增加不合乎需要的积蓄。
如上所述,在CVD反应室中的高温在穿孔护板中产生热应力。随时间这会引起护板变形和/或破裂。现有技术已经解决了这个问题。例如,美国专利第5,849,088号描述了一种护罩,该护罩可适应穿孔前壁的膨胀和收缩。虽然这是一种显著的进步,但是,组件相对较复杂,制造成本高。
因此,需要提供一种改进的保护气罩设备,它可减小在端部的物质积蓄,并且以一种成本较低的组件使穿孔前壁可以膨胀和收缩。
发明的目的和内容
本发明的目的是提供用于化学汽相淀积过程中的保护气罩设备,特别是提供用于保护气体喷射器的暴露表面的气罩组件,以及包括上述气罩保护设备的化学汽相淀积系统。
本发明的另一个目的是提供一种气罩组件,该组件可沿罩的长度形成基本均匀的惰性气体流。
本发明的另一个目的是提供一种简单的、成本较低的气罩组件,该组件使穿孔前壁可以膨胀和收缩。
本发明的另一个目的是提供一种带有可拆卸和可更换的穿孔前壁的罩组件。
本发明的另一个目的是提供一种寿命长且可以高效、经济地制造和保养的罩组件。
按照本发明的第一方面,提供一种保护气罩设备,它包括:一个带有后壁的罩本体;邻近于所述后壁的侧部和端部边缘设置在所述后壁上的多个凸缘,所述凸缘从所述后壁的一侧向外延伸;至少一个固定在所述后壁上的支承构件,所述至少一个支承构件具有多个孔;一个穿孔板装置,被所述凸缘和所述至少一个支承构件支承而与所述后壁间隔开来,所述后壁和穿孔板形成一通风系统,其中所述穿孔板装置包括两个穿孔板,它们配合形成所述穿孔板装置,至少两条管道伸入所述通风系统,每条管道从所述罩本体的一侧向内间隔开来,以便将惰性气体送至所述通风系统,使气体从所述穿孔板向外流动,以及接合所述本体的每个端部和所述穿孔板的边缘的端帽,将穿孔板固定在罩本体上,同时使穿孔板能够膨胀和收缩。
按照本发明的第二方面,提供一种化学汽相淀积处理系统,它包括:一个反应室;一个或多个用于将气态物质喷入所述反应室的喷射器;一个或多个用于将气体从所述反应室排出的排放口;以及一个或多个按照本发明第一方面的保护气罩设备,所述一个或多个保护气罩设备邻近所述一个或多个喷射器设置。
附图说明
对照以下附图阅读下面的详细说明和权利要求书,可进一步理解本发明的其它目的和特征。
图1是CVD系统的处理舱或室的示意图,表示本发明的气罩。
图2是本发明的气罩组件的剖视图。
图3是本发明的罩设备的立体图。
图4是罩设备的后壁的一半的立体图,表示穿孔气体输送管。
图5是一个穿孔板部分的立体图。
图6表示穿孔板止动帽。
优选实施例的说明
图1示意地表示一个处理舱或室11,它沿着如美国专利第5,849,088号所述的CVD处理系统的路径设置,上述美国专利全文在本说明书中用作参考。处理室11包括一个如美国专利第5,683,516号或第6,022,414号所述的喷射器12,用于将化学试剂或其气态物质喷入在喷射器12正下面的反应室或处理区13中。被处理的片14借助输送带17移过反应室。片可以由邻近反应室设置的加热器18加热。
如片或基片14移经喷射器时,喷射的气体相互反应并与基片的上表面反应,在基片表面上形成薄而均匀的层或膜。包括反应副产物和未反应气体的废产物通过连接于排放系统的排气孔21排放。
如图1所示,一保护罩组件22设置在喷射器12的暴露表面和排气道或排气孔21的进口前。该罩使喷射器和排气道与处理室13内发生的反应隔开,防止反应副产物和其它污染物沉积在喷射器和排气道表面。罩组件也可防止上述副产物和污染物在罩表面上积蓄,从而使大多数副产物从处理室排入排放系统。
特别如图2-5所示,罩组件22包括一个后壁26,该后壁邻近于喷射器12的前表面设置,并围绕喷射器外缘。该后壁包括一个槽28,该槽为试剂流入处理室提供进口通道。进口通道的尺寸、形状和结构取决于喷射器及其孔道的结构。罩的后壁在槽28处设有限定一通道31的凸缘29。后壁的侧部和边缘设有端部和侧部凸缘32和33。一个穿孔板34设置在凸缘29,32和33的顶部上。穿孔板最好有两个部分,它的一个部分表示在图5中。两部分的切口37共同限定进口通道31的槽。切口38容纳将要描述的惰性气体进口管道。所述两部分放在凸缘上,由端帽41固定,如图6所示。端帽具有与后壁凸缘的端部相同的结构,包括凸缘42,所述凸缘接合后壁并将穿孔板的边缘夹紧在后壁凸缘上。端帽由将支承件44安装在罩组件上的螺钉43固定,如图1所示。夹子46将穿孔板槽缘弹性地夹紧在进口孔道凸缘上。穿孔板和后壁的热胀差通过穿孔板相对于后壁的滑动补偿。后壁和穿孔板之间的空间构成通风系统。送入该通风系统的惰性气体流过穿孔板上的穿孔,从而防止反应副产物在穿孔板上的沉积。
现在参阅图4,惰性气体是通过设置在后壁的每个边缘上的通道或管47输送的。所述管具有一伸展部48,沿着后部纵向延伸,并例如通过焊接固定在后壁上。伸展部48在弯头49之间,管道的端部向上延伸以便从气源接受惰性气体。伸展部48具有穿孔51,以便使惰性气体均匀地沿通风系统流动。按照本发明的一个特征,弯头也具有穿孔52,以便使惰性气体可流向通风系统的端部,从而防止副产物在罩端部附近沉积。
支承构件54沿弯曲部分焊接在后壁上,以便防止穿孔板变形。该支承构件在罩本体的端部之间延伸。在支承构件上形成多个孔或槽,以便使惰性气体可沿通风系统流动。显然,支承构件的位置及支承构件的数目可以改变。
罩组件也包括从罩组件22的上翻的边缘被支承件44向外支承的罩本体56。罩本体56和罩组件22共同形成排放通道21的进口。罩本体56包括一个背部61和一个间隔开来的穿孔板62,以便在其间形成通风系统。惰性气体借助管或管道64送入通风系统。
从前面的描述可以看出,本发明提供了一种简单、造价相对较低的罩。该罩可以适应温度变化的条件,穿孔板不致变形或破裂。这种罩组件可以容易地拆卸,以便清洗和/或更换穿孔板。惰性气体可沿罩组件的长度和端部均匀地流动。
前面对本发明具体实施例的描述是为了说明和描述的目的,而并不是为了穷举或将本发明限定在所公开的确切形式上,显然按照上面的技术内容可以进行许多修改和变化。实施例是为了最好地解释本发明的原理及其实际应用而被选择和描述的,为的是使本专业技术人员能够很好地应用本发明。可以构想出带有适于特定应用的各种变化的各种实施例。本发明的范围是由权利要求及其等同物限定的。
Claims (5)
1.一种保护气罩设备,它包括:
一个带有后壁的罩本体;
邻近于所述后壁的侧部和端部边缘设置在所述后壁上的多个凸缘,所述凸缘从所述后壁的一侧向外延伸;
至少一个固定在所述后壁上的支承构件,所述至少一个支承构件具有多个孔;
一个穿孔板装置,被所述凸缘和所述至少一个支承构件支承而与所述后壁间隔开来,所述后壁和穿孔板形成一通风系统,其中所述穿孔板装置包括两个穿孔板,它们配合形成所述穿孔板装置,
至少两条管道伸入所述通风系统,每条管道从所述罩本体的一侧向内间隔开来,以便将惰性气体送至所述通风系统,使气体从所述穿孔板向外流动,以及
接合所述本体的每个端部和所述穿孔板的边缘的端帽,将穿孔板固定在罩本体上,同时使穿孔板能够膨胀和收缩。
2.如权利要求1所述的保护气罩设备,其特征在于:每条管道具有一个邻近所述后壁的边缘沿所述后壁延伸的伸展部,以及一个邻近所述后壁的端部的弯头,每条管道包括沿所述伸展部及在弯头上的穿孔,以便形成进入所述通风系统和端部的基本均匀的气体流。
3.一种化学汽相淀积处理系统,它包括:
一个反应室;
一个或多个用于将气态物质喷入所述反应室的喷射器;
一个或多个用于将气体从所述反应室排出的排放口;以及
一个或多个权利要求1或2所述的保护气罩设备,所述一个或多个保护气罩设备邻近所述一个或多个喷射器设置。
4.如权利要求3所述的化学汽相淀积系统,其特征在于:一条输送带移动一基片穿过所述反应室。
5.如权利要求4所述的化学汽相淀积系统,其特征在于:一个或多个如权利要求1或2所述的第二保护气罩邻近所述一个或多个排放口设置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13536299P | 1999-05-21 | 1999-05-21 | |
US60/135,362 | 1999-05-21 |
Publications (2)
Publication Number | Publication Date |
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CN1351675A CN1351675A (zh) | 2002-05-29 |
CN1175125C true CN1175125C (zh) | 2004-11-10 |
Family
ID=22467764
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Application Number | Title | Priority Date | Filing Date |
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CNB00807884XA Expired - Fee Related CN1175125C (zh) | 1999-05-21 | 2000-05-19 | 保护气罩设备 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6576060B1 (zh) |
EP (1) | EP1212475B1 (zh) |
JP (1) | JP4913947B2 (zh) |
KR (1) | KR20020008193A (zh) |
CN (1) | CN1175125C (zh) |
AT (1) | ATE539179T1 (zh) |
AU (1) | AU5144100A (zh) |
TW (1) | TW530097B (zh) |
WO (1) | WO2000071778A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2002024985A1 (de) * | 2000-09-22 | 2002-03-28 | Aixtron Ag | Gaseinlassorgan für cvd-verfahren und vorrichtung |
KR20030038396A (ko) * | 2001-11-01 | 2003-05-16 | 에이에스엠엘 유에스, 인코포레이티드 | 우선적인 화학 기상 증착 장치 및 방법 |
US9150986B2 (en) | 2011-05-04 | 2015-10-06 | Nike, Inc. | Knit component bonding |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US4834020A (en) | 1987-12-04 | 1989-05-30 | Watkins-Johnson Company | Atmospheric pressure chemical vapor deposition apparatus |
DE3918256A1 (de) | 1989-06-05 | 1990-12-06 | Standard Elektrik Lorenz Ag | Vorrichtung zur abscheidung von dielektrischen schichten |
US5393563A (en) | 1991-10-29 | 1995-02-28 | Ellis, Jr.; Frank B. | Formation of tin oxide films on glass substrates |
US6022414A (en) | 1994-07-18 | 2000-02-08 | Semiconductor Equipment Group, Llc | Single body injector and method for delivering gases to a surface |
TW359943B (en) | 1994-07-18 | 1999-06-01 | Silicon Valley Group Thermal | Single body injector and method for delivering gases to a surface |
US5944900A (en) * | 1997-02-13 | 1999-08-31 | Watkins Johnson Company | Protective gas shield for chemical vapor deposition apparatus |
US6056824A (en) | 1998-01-16 | 2000-05-02 | Silicon Valley Group Thermal Systems | Free floating shield and semiconductor processing system |
US6352592B1 (en) * | 1998-01-16 | 2002-03-05 | Silicon Valley Group, Thermal Systems Llc | Free floating shield and semiconductor processing system |
US5849088A (en) * | 1998-01-16 | 1998-12-15 | Watkins-Johnson Company | Free floating shield |
US6220286B1 (en) * | 1999-01-29 | 2001-04-24 | Michael L. Davenport | Gas blanket distributor |
-
2000
- 2000-05-19 EP EP00936074A patent/EP1212475B1/en not_active Expired - Lifetime
- 2000-05-19 US US09/574,826 patent/US6576060B1/en not_active Expired - Lifetime
- 2000-05-19 KR KR1020017014850A patent/KR20020008193A/ko not_active Application Discontinuation
- 2000-05-19 CN CNB00807884XA patent/CN1175125C/zh not_active Expired - Fee Related
- 2000-05-19 JP JP2000620151A patent/JP4913947B2/ja not_active Expired - Lifetime
- 2000-05-19 AT AT00936074T patent/ATE539179T1/de active
- 2000-05-19 TW TW089109705A patent/TW530097B/zh not_active IP Right Cessation
- 2000-05-19 WO PCT/US2000/013754 patent/WO2000071778A1/en not_active Application Discontinuation
- 2000-05-19 AU AU51441/00A patent/AU5144100A/en not_active Abandoned
Also Published As
Publication number | Publication date |
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TW530097B (en) | 2003-05-01 |
EP1212475A1 (en) | 2002-06-12 |
ATE539179T1 (de) | 2012-01-15 |
US6576060B1 (en) | 2003-06-10 |
CN1351675A (zh) | 2002-05-29 |
EP1212475B1 (en) | 2011-12-28 |
WO2000071778A1 (en) | 2000-11-30 |
JP2003500535A (ja) | 2003-01-07 |
EP1212475A4 (en) | 2007-12-26 |
AU5144100A (en) | 2000-12-12 |
KR20020008193A (ko) | 2002-01-29 |
JP4913947B2 (ja) | 2012-04-11 |
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