CN1175086A - 制造场效应晶体管的方法 - Google Patents
制造场效应晶体管的方法 Download PDFInfo
- Publication number
- CN1175086A CN1175086A CN97115399A CN97115399A CN1175086A CN 1175086 A CN1175086 A CN 1175086A CN 97115399 A CN97115399 A CN 97115399A CN 97115399 A CN97115399 A CN 97115399A CN 1175086 A CN1175086 A CN 1175086A
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- China
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- layer
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- metal
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 230000005669 field effect Effects 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 65
- 239000002184 metal Substances 0.000 claims abstract description 65
- 238000002161 passivation Methods 0.000 claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 15
- 239000004642 Polyimide Substances 0.000 claims abstract description 10
- 229920001721 polyimide Polymers 0.000 claims abstract description 10
- 238000005260 corrosion Methods 0.000 claims description 27
- 230000007797 corrosion Effects 0.000 claims description 27
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 19
- 238000001020 plasma etching Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 claims description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 6
- 238000001465 metallisation Methods 0.000 abstract description 5
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 125000006850 spacer group Chemical group 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 239000003292 glue Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000007704 wet chemistry method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- VYQRBKCKQCRYEE-UHFFFAOYSA-N ctk1a7239 Chemical compound C12=CC=CC=C2N2CC=CC3=NC=CC1=C32 VYQRBKCKQCRYEE-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19631744.4 | 1996-08-06 | ||
DE19631744A DE19631744C1 (de) | 1996-08-06 | 1996-08-06 | Verfahren zur Herstellung eines Feldeffekttransistors |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1175086A true CN1175086A (zh) | 1998-03-04 |
CN1080457C CN1080457C (zh) | 2002-03-06 |
Family
ID=7801935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN97115399A Expired - Fee Related CN1080457C (zh) | 1996-08-06 | 1997-08-06 | 制造场效应晶体管的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5960269A (zh) |
EP (1) | EP0823728B1 (zh) |
JP (1) | JPH1079396A (zh) |
CN (1) | CN1080457C (zh) |
DE (2) | DE19631744C1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020192689A1 (en) * | 2019-03-28 | 2020-10-01 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device and fabrication method thereof |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6255180B1 (en) * | 1998-05-14 | 2001-07-03 | Cypress Semiconductor Corporation | Semiconductor device with outwardly tapered sidewall spacers and method for forming same |
DE10304722A1 (de) * | 2002-05-11 | 2004-08-19 | United Monolithic Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements |
US7535621B2 (en) * | 2006-12-27 | 2009-05-19 | Qualcomm Mems Technologies, Inc. | Aluminum fluoride films for microelectromechanical system applications |
CN101752241B (zh) * | 2008-12-16 | 2013-04-10 | 上海空间电源研究所 | 大面积GaAs衬底腐蚀工艺 |
RU2485621C1 (ru) * | 2011-12-12 | 2013-06-20 | Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП НПП "Исток") | Способ изготовления мощного транзистора свч |
US10685007B2 (en) * | 2016-03-29 | 2020-06-16 | Sap Se | Table content transport and delivery |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4377899A (en) * | 1979-11-19 | 1983-03-29 | Sumitomo Electric Industries, Ltd. | Method of manufacturing Schottky field-effect transistors utilizing shadow masking |
DE3005733A1 (de) * | 1980-02-15 | 1981-08-20 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer halbleiteranordnung und nach diesem verfahren hergestellte halbleiteranordnung |
JP2670293B2 (ja) * | 1988-04-15 | 1997-10-29 | 富士通株式会社 | 高電子移動度トランジスタの製造方法 |
DE3913540A1 (de) * | 1988-09-07 | 1990-03-15 | Licentia Gmbh | Verfahren zur herstellung von steuerelektroden |
DE4219935C2 (de) * | 1992-06-17 | 1994-06-09 | Siemens Ag | Verfahren zur Herstellung eines Feldeffekttransistors |
JPH06232168A (ja) * | 1993-02-03 | 1994-08-19 | Sumitomo Electric Ind Ltd | 電界効果トランジスタおよびその製造方法 |
US5432119A (en) * | 1994-01-31 | 1995-07-11 | Hughes Aircraft Company | High yield electron-beam gate fabrication method for sub-micron gate FETS |
US5869364A (en) * | 1996-07-22 | 1999-02-09 | The United States Of America As Represented By The Secretary Of The Air Force | Single layer integrated metal process for metal semiconductor field effect transistor (MESFET) |
-
1996
- 1996-08-06 DE DE19631744A patent/DE19631744C1/de not_active Expired - Fee Related
-
1997
- 1997-07-11 EP EP97111877A patent/EP0823728B1/de not_active Expired - Lifetime
- 1997-07-11 DE DE59707017T patent/DE59707017D1/de not_active Expired - Fee Related
- 1997-07-30 JP JP9219249A patent/JPH1079396A/ja active Pending
- 1997-08-06 CN CN97115399A patent/CN1080457C/zh not_active Expired - Fee Related
- 1997-08-06 US US08/906,780 patent/US5960269A/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020192689A1 (en) * | 2019-03-28 | 2020-10-01 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device and fabrication method thereof |
US11201222B2 (en) | 2019-03-28 | 2021-12-14 | Innoscience (Zhuhai) Technology Co., Ltd. | Semiconductor device and fabrication method thereof |
Also Published As
Publication number | Publication date |
---|---|
EP0823728B1 (de) | 2002-04-17 |
US5960269A (en) | 1999-09-28 |
EP0823728A3 (de) | 1998-07-22 |
EP0823728A2 (de) | 1998-02-11 |
DE19631744C1 (de) | 1998-03-12 |
JPH1079396A (ja) | 1998-03-24 |
DE59707017D1 (de) | 2002-05-23 |
CN1080457C (zh) | 2002-03-06 |
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Legal Events
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: TRIQUINT SEMICONDUCTOR INC Free format text: FORMER OWNER: TERRY QYNTEL HUNGARY STOCK CO., LTD. Effective date: 20040205 Owner name: TERRY QYNTEL HUNGARY STOCK CO., LTD. Free format text: FORMER OWNER: SIEMENS AG Effective date: 20040205 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20040205 Address after: Federal Republic of Germany, Munich Patentee after: Terry Quint Semiconductor Ltd. Address before: Hungarian pine burt hai Patentee before: Terry Quint Hungary Holdings Ltd. Effective date of registration: 20040205 Address after: Hungarian pine burt hai Patentee after: Terry Quint Hungary Holdings Ltd. Address before: Federal Republic of Germany, Munich Patentee before: SIEMENS AG |
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C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |