CN117497497B - Liquid cooling heat dissipation packaging structure of power module - Google Patents
Liquid cooling heat dissipation packaging structure of power module Download PDFInfo
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- CN117497497B CN117497497B CN202311842265.1A CN202311842265A CN117497497B CN 117497497 B CN117497497 B CN 117497497B CN 202311842265 A CN202311842265 A CN 202311842265A CN 117497497 B CN117497497 B CN 117497497B
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- 238000001816 cooling Methods 0.000 title claims abstract description 114
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 61
- 239000007788 liquid Substances 0.000 title claims abstract description 51
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 126
- 229910052802 copper Inorganic materials 0.000 claims abstract description 126
- 239000010949 copper Substances 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000000919 ceramic Substances 0.000 claims abstract description 34
- 239000000110 cooling liquid Substances 0.000 claims abstract description 23
- 238000003475 lamination Methods 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 33
- 238000007789 sealing Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 7
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 95
- 238000009413 insulation Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002715 modification method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention belongs to the technical field of semiconductor devices, and particularly relates to a liquid cooling heat dissipation packaging structure of a power module. Aiming at the defect of low heat dissipation efficiency of the existing silicon carbide power module, the invention adopts the following technical scheme: a liquid cooling heat dissipation packaging structure of a power module comprises a DBC ceramic substrate; a power chip; an inner copper layer forming an inner cooling channel flowing through the power chip; an outer copper layer forming an outer cooling channel; a cooling liquid flowing through the inner cooling channel and the outer cooling channel; one end of the lead is connected with the power chip, and the other end of the lead is led out through the inner copper layer and the DBC ceramic substrate; the DBC ceramic substrate, the inner copper layer, the power chip and the outer copper layer are distributed in a lamination mode along the thickness direction and are connected into a whole. The beneficial effects of the invention are as follows: the heat dissipation efficiency is improved, the temperature difference of different surfaces is reduced, and the working reliability of the power chip is improved; compared with the existing double-sided water-cooling heat dissipation structure, the outer copper layer can directly form the outer surface of the packaging structure.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a liquid cooling heat dissipation packaging structure of a power module.
Background
Silicon carbide power modules are important in research due to their high stability in high temperature environments and high temperature resistance. For example, in the new energy automobile power module, from the time of mainly silicon-based IGBTs (edge gate bipolar transistors, insulate-Gate Bipolar Transistor, IGBTs), a development stage with silicon carbide MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFETs) as a core is gradually entered.
With the increase of the power consumption of the silicon carbide power module, heat dissipation becomes an important factor affecting the long-term stable operation of the silicon carbide power module. For the high-voltage power module with high voltage and high current, only a liquid cooling heat dissipation mode can be adopted. However, in the current liquid cooling heat dissipation method, a water cooling plate (interface material) is welded or attached under a DBC (direct copper clad, direct Bond Copper, DBC) ceramic substrate of a power module, and only one side of a chip can be cooled. In the scheme disclosed by the CN 116741724A-cooling integrated silicon carbide module, the preparation method thereof and the modification method of the chip, the heat dissipation efficiency is improved by arranging the manifold layer and the micro-flow channels on the chip.
The aforementioned patent application, however, still has the following problems: the chip only radiates heat on one side, the temperature nonuniformity exists in the chip, the surface temperature of the chip at the joint of the chip and the water cooling plate is the lowest, the temperature of the chip far away from the end of the water cooling plate is higher (the surface is usually sealed by epoxy resin), and the temperature difference between the two surfaces causes the temperature gradient in the chip, so that the service life of the chip is influenced. In addition, along with the rising of power, in order to ensure the normal operation of the power chip, a mode of increasing the fluid flow is generally adopted, so that the temperature difference inside the chip can be increased, and the reliability of the chip is reduced. Meanwhile, the above patent application discloses only a liquid cooling heat dissipation structure, but does not disclose a complete packaging structure, and fails to combine packaging and liquid cooling, and does not disclose a specific wiring structure. When a double sided cooling structure is used, packaging and wiring issues need to be addressed.
In addition, although there are power modules with double-sided heat dissipation in the prior art, liquid cooling is not used in most cases. A few double-sided liquid cooling heat dissipation structures have the advantages that aluminum shells, copper, epoxy resin and the like are arranged between cooling liquid and a power chip, so that heat resistance is large, heat dissipation efficiency is low, the structure is complex, and a lot of lifting space is reserved. Meanwhile, the existing double-sided liquid cooling heat dissipation packaging structure is packaged by epoxy resin and the like.
Disclosure of Invention
Aiming at the defect of low heat dissipation efficiency of the traditional silicon carbide power module, the invention provides the liquid cooling heat dissipation packaging structure of the power module, which carries out multi-surface liquid cooling heat dissipation on the chip, reduces the thermal resistance, improves the heat dissipation efficiency and reduces the temperature difference.
In order to achieve the above purpose, the invention adopts the following technical scheme: a power module liquid cooling package structure, the power module liquid cooling package structure comprising:
a DBC ceramic substrate;
a power chip;
An inner copper layer positioned between the power chip and the DBC ceramic substrate to form an inner cooling channel flowing through the power chip;
an outer copper layer forming an outer cooling channel for cooling the outside of the power chip;
a cooling liquid flowing through the inner cooling channel and the outer cooling channel;
one end of the lead is connected with the power chip, and the other end of the lead is led out through the inner copper layer and the DBC ceramic substrate;
Wherein, DBC ceramic substrate, interior copper layer, power chip, outer copper layer are distributed along the range upon range of thickness direction and are connected as a whole.
The power module liquid cooling heat dissipation packaging structure is provided with the inner copper layer and the outer copper layer, wherein the inner copper layer is positioned between the power chip and the DBC ceramic substrate and forms an inner cooling channel, the outer copper layer forms an outer cooling channel, cooling liquid flows through the inner cooling channel, cooling liquid flowing in the inner cooling channel directly flows through the power chip to cool one side of the power chip in the thickness direction, cooling liquid flowing in the outer cooling channel directly or indirectly flows through the power chip, and the other side of the power chip in the thickness direction is cooled. The outer copper layer can directly form the outer surface of the packaging structure without using sealing materials such as epoxy resin and the like as the outer surface of the packaging structure; the novel lead-out structure is adopted so as not to prevent the realization of double-sided liquid cooling.
As one direction of improvement of the outer copper layer, the outer cooling channel is isolated from the power chip, so that insulation problems caused by corrosion of the power chip possibly caused by cooling liquid in the outer cooling channel are avoided, and insulation requirements of the power chip are reduced. The isolation between the external cooling channel and the power chip is realized through the sealing between the copper layers, and the sealing is more reliable compared with the sealing adopting the modes of epoxy resin and the like.
As another direction of the improvement of the outer copper layer, the power chip is insulated after being connected with the lead, the cooling liquid is insulated cooling liquid, the outer copper layer comprises a base, a water inlet groove, a heat dissipation groove and a water outlet groove are formed in the base, an outer cooling channel is formed by the water inlet groove, the heat dissipation groove and the water outlet groove, and the power chip is located in the heat dissipation groove. The cooling liquid in the external cooling channel flows through the surface of one side of the thickness direction of the power chip, so that the heat dissipation effect is improved, but simultaneously, the insulation of the power chip is also required to be high.
As the improvement direction of the inner copper layer, the inner copper layer comprises a manifold splitter plate and an inner guide plate, wherein the manifold splitter plate is positioned between the DBC ceramic substrate and the inner guide plate and is provided with a manifold water inlet hole, a splitter manifold and a manifold water outlet hole, and the inner guide plate is provided with a through guide groove which is communicated in the thickness direction; the power chip comprises a substrate layer, a material layer and a drain electrode, wherein the substrate layer is provided with a micro-channel, and the micro-channel and the shunt manifold are communicated through the diversion trench.
As the direction of the improvement of power chip distribution, interior copper layer divide into first interior copper layer and second interior copper layer, and outer copper layer divide into first outer copper layer and second outer copper layer, is equipped with two power chips between first interior copper layer and the first outer copper layer, is equipped with a power chip between second interior copper layer and the second outer copper layer, and the projection of power chip in interior copper layer and the power chip in the outer copper layer on horizontal plane (long wide face) staggers, and first outer copper layer and the outer copper layer of second form the surface of packaging structure's thickness direction.
The liquid cooling heat dissipation packaging structure of the power module has the beneficial effects that: the power module liquid cooling heat dissipation packaging structure disclosed by the invention is more surface-cooling to the power chip compared with a single-sided cooling structure in the prior art, the heat dissipation efficiency is improved, the temperature difference of different surfaces is reduced, and the working reliability of the power chip is improved; compared with the existing double-sided water-cooling heat dissipation structure, the outer copper layer can directly form the outer surface of the packaging structure, and sealing materials such as epoxy resin and the like are not required to be used as the outer surface of the packaging structure; the novel lead-out structure is adopted so as not to prevent the realization of double-sided liquid cooling.
Drawings
Fig. 1 is a schematic structural diagram of a liquid cooling heat dissipation package structure of a power module according to a first embodiment of the present invention.
Fig. 2 is a cross-sectional view of a power module liquid-cooled heat dissipation package structure according to a first embodiment of the present invention (dotted arrows indicate a flow direction of a coolant).
Fig. 3 is an exploded view of a power module liquid cooling package structure according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a DBC ceramic substrate of a liquid cooling heat dissipation packaging structure of a power module according to an embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a first manifold splitter plate of a liquid-cooled heat dissipation package structure of a power module according to an embodiment of the invention.
Fig. 6 is a schematic structural diagram of a first inner baffle of a liquid cooling heat dissipation package structure of a power module according to an embodiment of the invention.
Fig. 7 is a schematic structural diagram of a power chip of a power module liquid cooling package structure according to an embodiment of the present invention.
Fig. 8 is a schematic structural diagram of a first external baffle of a liquid cooling package structure of a power module according to an embodiment of the invention.
Fig. 9 is a schematic structural diagram of a first cover plate of a liquid cooling heat dissipation package structure of a power module according to an embodiment of the invention.
Fig. 10 is a schematic perspective view of another angle of a liquid-cooled heat dissipation package structure for a power module according to an embodiment of the invention.
In the figure, 1, a DBC ceramic substrate; 11. wiring holes with the thickness of the substrate; 12. a substrate horizontal wiring hole;
2. A power chip; 21. an annular seal portion; 22. a groove;
3. a first manifold diverter plate; 31. a manifold water inlet; 32. a split manifold; 33. a manifold water outlet; 34. copper layer thickness wiring holes;
4. A first inner baffle; 41. the through diversion trench;
5. A first outer baffle; 51. feeding into a water tank; 52. an outer guide groove; 53. an inner guide groove; 54. a water outlet tank; 55. a middle groove; 56. a receiving groove;
6. a first cover plate; 61. a heat sink; 62. a heat radiation fin;
7. A second manifold diverter plate;
8. a second inner baffle;
9. A second outer baffle;
10. a second cover plate;
D. A knockout;
l, lead wire.
Detailed Description
The following description of the technical solutions of the inventive embodiments of the present invention is provided only for the preferred embodiments of the invention, but not all. Based on the examples in the implementation manner, other examples obtained by a person skilled in the art without making any inventive effort fall within the scope of protection created by the present invention.
Referring to fig. 1 to 10, in a first embodiment of the present invention, a power module liquid cooling heat dissipation package structure includes:
A DBC ceramic substrate 1;
a power chip 2;
An inner copper layer which is positioned between the power chip 2 and the DBC ceramic substrate 1 and forms an inner cooling channel flowing through the power chip 2;
an outer copper layer forming an outer cooling channel for cooling the outside of the power chip 2;
a cooling liquid flowing through the inner cooling channel and the outer cooling channel;
One end of the lead L is connected with the power chip 2, and the other end of the lead L is led out through the inner copper layer and the DBC ceramic substrate 1;
Wherein, the DBC ceramic substrate 1, the inner copper layer, the power chip 2 and the outer copper layer are distributed in a lamination way along the thickness direction and are connected into a whole.
Referring to fig. 1 to 3, in the present embodiment, the power module liquid cooling heat dissipation package structure includes a DBC ceramic substrate 1, three power chips 2, two inner copper layers (including a manifold splitter and an inner splitter respectively), and two outer copper layers (including an outer splitter and a cover respectively). The power module liquid cooling heat dissipation packaging structure further comprises a liquid separator D positioned at two ends, and the liquid separator D is communicated with the inner cooling channel and the outer cooling channel. The dispenser D is only schematically shown, and the specific structure of the dispenser D, such as the channels therein, etc., are not shown. Not shown in the cooling liquid diagram. Starting from the DBC ceramic substrate 1, a first manifold splitter plate 3, a first inner guide plate 4, two power chips 2, a first outer guide plate 5 and a first cover plate 6 are sequentially distributed upwards in the thickness direction, and a second manifold splitter plate 7, a second inner guide plate 8, two power chips 2, a second outer guide plate 9 and a second cover plate 10 are sequentially distributed downwards in the thickness direction. The power module liquid cooling heat dissipation packaging structure (except the liquid separator D) is integrally in a cuboid shape, and two power chips 2 on the same layer are distributed along the length direction.
The inner copper layer is divided into a first inner copper layer and a second inner copper layer, the outer copper layer is divided into a first outer copper layer and a second outer copper layer, two power chips 2 are arranged between the first inner copper layer and the first outer copper layer, one power chip 2 is arranged between the second inner copper layer and the second outer copper layer, projections of the upper two power chips 2 and the lower power chip 2 along the thickness direction are staggered, and the first outer copper layer and the second outer copper layer form outer surfaces of the packaging structure in the thickness direction, namely, the upper surface of the first sealing cover plate 6 and the lower surface of the second sealing cover plate 10 form the upper surface and the lower surface of the packaging structure.
Two power chips 2 are arranged above the DBC ceramic substrate 1, and one power chip 2 is arranged below the DBC ceramic substrate. The power module liquid cooling package structure forms a first inner cooling channel flowing through the upper two power chips 2, and forms a first outer cooling channel flowing through the outer walls of the accommodating grooves 56 above the upper two power chips 2. The power module liquid cooling package structure forms a second inner cooling channel flowing through the lower power chip 2, and forms a second outer cooling channel flowing through the outer wall of the accommodating groove 56 below the lower power chip 2.
Referring to fig. 4 to 6, in the present embodiment, a substrate thickness wiring hole 11 and a substrate horizontal wiring hole 12 are formed in the DBC ceramic substrate 1 in the thickness direction, and a manifold splitter plate and an inner splitter plate of an inner copper layer are formed with copper layer thickness wiring holes 34 penetrating in the thickness direction, and the substrate horizontal wiring hole 12, the substrate thickness wiring hole 11 and the copper layer thickness wiring holes 34 are communicated. Three groups of six substrate thickness wiring holes 11 are provided, three substrate horizontal wiring holes 12 are provided, and six outlets are provided for the three substrate horizontal wiring holes 12, which correspond to the three power chips 2 respectively and are used for leading out six leads L. The copper layer thickness wiring hole 34 and the substrate thickness wiring hole 11 are coaxially provided. The lead L is connected to the drain of the power chip 2 via the substrate horizontal wiring hole 12, the substrate thickness wiring hole 11, and the copper layer thickness wiring hole 34. In order to avoid the wire L being pressed, a wire groove is provided between the first inner deflector 4 and/or the first outer deflector 5, which communicates with the copper layer thickness wire connection hole 34.
Referring to fig. 5, the first manifold split plate 3 has a manifold water inlet hole 31, a split manifold 32, and a manifold water outlet hole 33, and two split manifolds 32. The first manifold split plate 3 is provided with two groups of four copper layer thickness wiring holes 34 penetrating in the thickness direction. The manifold water inlet 31 and the manifold water outlet 33 are coaxially arranged, and the first manifold split plate 3 is also provided with an intermediate groove 55 coaxial with the manifold water inlet 31.
Referring to fig. 6, the first inner baffle 4 has a plurality of through-flow guide grooves 41 penetrating in the thickness direction. The first inner baffle 4 is provided with two groups of four copper layer thickness wiring holes 34 penetrating in the thickness direction.
Referring to fig. 7, in this embodiment, the power chip 2 includes a substrate layer, a material layer and a drain electrode, the substrate layer is insulated, the substrate layer has protrusions, grooves 22 are formed between the protrusions, the bottom surfaces of the protrusions are in sealing connection with the inner copper layer, and micro channels are formed in the grooves 22. The substrate layer insulates the material layer and the drain electrode from the inner copper layer and the outer copper layer, and the drain electrode is connected with a wire. The substrate layer has micro flow channels (not shown in the figure), and the through flow channels 41 of the first inner flow guide plate 4 communicate the micro flow channels of the power chip 2 with the manifold 32 of the first manifold flow guide plate 3. The manifold water inlet holes 31, the split manifold 32, the through diversion trenches 41 and the manifold water outlet holes 33 form an internal cooling channel.
Referring to fig. 8, the first outer baffle 5 has an inlet groove 51 and an outlet groove 54, and the first outer baffle 5 has an outer guide groove 52 and an inner guide groove 53 in the thickness direction. The side of the first outer deflector 5 facing the power chip 2 forms a receiving groove 56 having a top wall and an annular side wall, the receiving groove 56 being isolated from the outer cooling channel, the power chip 2 being located in the receiving groove 56. Two containing grooves 56 are formed on the first outer guide plate 5 and distributed along the first horizontal direction, two power chips 2 are provided, two guide outer grooves 52 and two guide inner grooves 53 are provided, and an intermediate groove 55 is formed between the intermediate guide inner groove 53 and the guide outer groove 52.
In this embodiment, the first external cooling channel is isolated from the power chip 2 by the first external baffle 5, so as to ensure that the cooling liquid does not damage the insulation treatment of the power chip 2. The cooling liquid adopts conductive cooling liquid such as water.
Referring to fig. 9, the first cover plate 6 has two heat dissipation grooves 61 formed on a side facing the power chip 2, and heat dissipation fins 62 are formed in both heat dissipation grooves 61. The water inlet groove 51, the outer guide groove 52, the heat radiation groove 61, the inner guide groove 53, and the water outlet groove 54 form an outer cooling passage.
Referring to fig. 10, the power chip 2 is a high power chip 2, the power chip 2 and the leads L are connected by a copper connection plate, and the receiving groove 56 of the first outer baffle 5 extends in the width direction and receives the copper connection plate and the leads L. The substrate layer of the power chip 2 is sealed with the first inner guide plate through the annular sealing part 21, and the cooling liquid in the inner cooling channel is isolated from the conductive part, the copper connecting plate and the lead wire of the power chip 2. The lead L is led out from the containing groove 56 of the power chip 2, the copper layer thickness wiring hole 34 of the first inner guide plate 4, the copper layer thickness wiring hole 34 of the first manifold splitter plate 3, the substrate thickness wiring hole 11 and the substrate horizontal wiring hole 12 of the DBC ceramic substrate 1 after being connected with the copper connecting plate.
Referring to fig. 2, the second manifold splitter plate 7 is adapted to a different number of power chips 2 than the first manifold splitter plate 3, and the number and positions of the splitter manifold 32 and the copper layer thickness wiring holes 34 of the second manifold splitter plate 7 are different from those of the first manifold splitter plate 3.
The number and positions of the through diversion trenches 41 and the copper layer thickness wiring holes 34 of the second inner deflector 8 are different from those of the first inner deflector 4, and the second inner deflector 8 and the first inner deflector 4 are suitable for different numbers of power chips 2.
The number and positions of the outer guide grooves 52, the inner guide grooves 53 and the containing grooves 56 of the second outer guide plate 9 are different from those of the first outer guide plate 5, and the middle grooves 55 are not arranged, so that the second outer guide plate 9 and the first outer guide plate 5 are suitable for different numbers of power chips 2.
The second cover plate 10 and the first cover plate 6 are adapted to different numbers of power chips 2, and the number and positions of the heat dissipation grooves 61 of the second cover plate 10 are different from those of the first cover plate 6.
In this embodiment, the DBC ceramic substrate 1, the power chip 2, the first manifold splitter 3, the first inner splitter 4, the first outer splitter 5, and the first cover plate 6 may be connected by diffusion welding, soldering, silver sintering, copper sintering, applying a heat conductive material, or the like.
To verify the effect of the inventive solution, the common substrate single-sided cooling, double-sided cooling solution was compared with the inventive solution. The test object was a DBC substrate (middle ceramic layer 1 mm, copper on top of and under top of 0.5 mm) of 40mm ×40mm ×2 mm (length×width×height), and 1 power chip of 10mm ×10mm ×0.5 mm (length×width×height) was sintered on each of the upper and lower surfaces of the substrate.
The existing substrate single-sided cooling scheme adopts a substrate ceramic layer microchannel scheme: 19 micro-channels of 40mm×1mm (length×width×height) were formed on the ceramic layer of the DBC substrate at equal intervals.
The existing double-sided cooling scheme adopts a double-sided laminating microchannel water-cooled plate scheme: on the basis of a substrate single-sided cooling scheme, a water cooling plate with the thickness of 40mm multiplied by 2mm is attached to the surfaces of the upper chip and the lower chip, wherein 19 micro-channels with the thickness of 40mm multiplied by 1mm (length multiplied by width multiplied by height) are uniformly arranged in the water cooling plate, and the total number of the micro-channels is 38.
According to the comparison scheme, 99 micro-channels with the diameter of 10mm multiplied by 0.1mm multiplied by 0.2mm are constructed in a chip substrate, two chips are both required to be constructed, and 198 micro-channels are totally constructed; and in the cover plate area above the chip, 256 cylindrical fins with the diameter of 0.3mm are uniformly arranged in the corresponding cover plate area above the chip, and the upper cover plate and the lower cover plate are all required to be provided with structures, and total 512 fins. The comparison scheme of the present invention is different from the embodiment scheme shown in fig. 1 to 10, in the comparison scheme of the present invention, only one chip is disposed above and below the substrate.
For controlling the variables, under the condition that the total flow is 10g/s, comparing the cooling effect of different schemes on the chips with the same heating value, and simultaneously adjusting the heating value of the chips, wherein the heating value variation range of the heat flow of the chips is 50W, 100W, 150W, 200W, 300W, 400W, 600W, 800W and 1000W.
Taking the highest chip surface temperature as junction temperature and comparison index, under different schemes, the chip junction temperature test results are as follows:
The junction temperature of the power device chip should be kept below 150 ℃ to ensure the reliability of operation. From the table, the heat dissipation effect of the comparison scheme of the invention is gradually improved along with the increase of the heat flux density, and the junction temperature can be ensured not to exceed 120 ℃ at 1000W/cm 2, so that the heat dissipation effect is effectively improved.
Meanwhile, since the two chips above the substrate and the chip below the substrate are staggered in the first embodiment, it is reasonable to believe that the first embodiment can obtain a lower chip junction temperature under the equivalent condition than the case where the two chips above and below the substrate are not staggered in the comparative embodiment.
The liquid cooling heat dissipation packaging structure of the power module has the beneficial effects that: the power module liquid cooling heat dissipation packaging structure disclosed by the invention has the advantages that compared with the single-sided cooling structure in the prior art, the power module liquid cooling heat dissipation packaging structure disclosed by the invention dissipates heat of more sides of the power chip 2, improves heat dissipation efficiency, reduces temperature difference of different sides and improves working reliability of the power chip 2; the outer cooling channel is isolated from the power chip 2 through copper interlayer sealing, the inner cooling channel is isolated through sealing of the substrate layer of the power chip 2 and the first inner guide plate 4, so that the cooling liquid is prevented from contacting the conductive part, the copper connecting plate and the lead L of the power chip 2, and the insulation performance is ensured; the power chip 2, the copper connecting plate and the lead L are insulated between the inner diversion layer and the outer diversion layer through insulation treatment (can be realized by arranging an insulation layer, leaving insulation gaps and the like), so that the power chip 2 can work normally; unique lead L leading-out structure; compared with the existing packaging structure, the outer copper layer directly forms the outer surface of the packaging structure, and sealing materials such as epoxy resin and the like are not required to be used as the outer surface of the packaging structure; the drain electrode and the material layer of the power chip 2 are insulated from each copper layer; three (or more) power chips 2 can be packaged together, i.e., a three-in-one package.
In other embodiments, the power chip may be disposed on only one side of the DBC ceramic substrate, which forms the outer surface of the package structure.
In other embodiments, the power chip is connected to the copper connection plate and the lead wire and then insulated, the cooling liquid is insulated cooling liquid, the outer copper layer comprises a base, a water inlet groove, a heat dissipation groove and a water outlet groove are formed on the base, the water inlet groove, the heat dissipation groove and the water outlet groove form an outer cooling channel, the power chip is located in the heat dissipation groove, and the cooling liquid in the outer cooling channel directly contacts the power chip (without spacing the copper layer). The insulation among the power chip, the copper connecting plate, the lead L and the copper layer is realized by means of cooling liquid (a gap for accommodating the cooling liquid is formed among the conductive part of the power chip, the copper connecting plate, the lead L and the copper layer) or by means of arranging an insulating layer or filling epoxy resin and the like. The outer copper layer may be a copper plate rather than being assembled from an outer baffle and a cover plate as in embodiment one.
While the invention has been described in terms of specific embodiments, it will be apparent to those skilled in the art that the invention is not limited to the specific embodiments described. Any modifications which do not depart from the functional and structural principles of the present invention are intended to be included within the scope of the appended claims.
Claims (7)
1. The utility model provides a power module liquid cooling heat dissipation packaging structure which characterized in that: the liquid cooling heat dissipation packaging structure of the power module comprises:
a DBC ceramic substrate (1);
A power chip (2);
An inner copper layer which is positioned between the power chip (2) and the DBC ceramic substrate (1) and forms an inner cooling channel flowing through the power chip (2);
an outer copper layer forming an outer cooling channel for cooling the outside of the power chip (2);
a cooling liquid flowing through the inner cooling channel and the outer cooling channel;
one end of the lead (L) is connected with the power chip (2), and the other end of the lead is led out through the inner copper layer and the DBC ceramic substrate (1);
Wherein, the DBC ceramic substrate (1), the inner copper layer, the power chip (2) and the outer copper layer are distributed in a lamination way along the thickness direction and are connected into a whole;
the external cooling channel is isolated from the power chip (2);
The outer copper layer comprises an outer guide plate and a cover plate, the outer guide plate is located between the cover plate and the inner copper layer, one face of the outer guide plate, facing the power chip (2), forms a containing groove (56) with a top wall and an annular side wall, the containing groove (56) is isolated from the outer cooling channel, and the power chip (2) is located in the containing groove (56).
2. The power module liquid cooling package structure according to claim 1, wherein: the outer deflector is provided with an inlet groove (51) and an outlet groove (54), the outer deflector is provided with an outer guide groove (52) and an inner guide groove (53) in the thickness direction, a heat dissipation groove (61) is formed on one surface of the cover plate facing the power chip (2), and an outer cooling channel is formed by the inlet groove (51), the outer guide groove (52), the heat dissipation groove (61), the inner guide groove (53) and the outlet groove (54).
3. The power module liquid cooling package structure according to claim 2, wherein: two containing grooves (56) distributed along the first horizontal direction are formed on the outer guide plate, two power chips (2) are arranged, two guide outer grooves (52) and two guide inner grooves (53) are arranged, and an intermediate groove (55) is formed between the middle guide inner groove (53) and the guide outer groove (52); a heat dissipation fin (62) is formed in the heat dissipation groove (61).
4. A power module liquid cooling package structure according to any one of claims 1 to 3, wherein: the power chip (2) is a high-power chip (2), the power chip (2) comprises a substrate layer, a material layer and a drain electrode, the substrate layer is provided with an annular sealing part which is in sealing connection with the inner copper layer, the drain electrode is connected with the lead (L) through a copper connecting plate, and the material layer, the drain electrode, the copper connecting plate and the lead (L) are insulated with the outer copper layer.
5. The power module liquid cooling package structure according to claim 4, wherein: the inner copper layer comprises a manifold splitter plate and an inner guide plate, wherein the manifold splitter plate is positioned between the DBC ceramic substrate (1) and the inner guide plate, the manifold splitter plate is provided with a manifold water inlet hole (31), a splitter manifold (32) and a manifold water outlet hole (33), the inner guide plate is provided with a through guide groove (41) communicated in the thickness direction, the substrate layer is further provided with a groove (22), a micro-channel is formed in the groove (22), the through guide groove (41) is communicated with the micro-channel and the splitter manifold (32), and the manifold water inlet hole (31), the splitter manifold (32), the through guide groove (41) and the manifold water outlet hole (33) form an inner cooling channel.
6. A power module liquid cooling package structure according to any one of claims 1 to 3, wherein: the inner copper layer is divided into a first inner copper layer and a second inner copper layer, the outer copper layer is divided into a first outer copper layer and a second outer copper layer, two power chips (2) are arranged between the first inner copper layer and the first outer copper layer, one power chip (2) is arranged between the second inner copper layer and the second outer copper layer, the projections of the power chips (2) in the inner copper layer and the power chips (2) in the outer copper layer along the thickness direction are staggered, and the first outer copper layer and the second outer copper layer form the outer surface of the packaging structure in the thickness direction.
7. The power module liquid cooling package structure according to claim 1, wherein: the power module liquid cooling heat dissipation packaging structure further comprises a liquid separator (D), wherein the liquid separator (D) is communicated with the inner cooling channel and the outer cooling channel;
The DBC ceramic substrate (1), the power chip (2), the inner copper layer and the outer copper layer are integrated through sintering;
A substrate thickness wiring hole (11) and a substrate horizontal wiring hole (12) in the thickness direction are formed in the DBC ceramic substrate (1), a copper layer thickness wiring hole (34) penetrating in the thickness direction is formed in the inner copper layer, the substrate horizontal wiring hole (12), the substrate thickness wiring hole (11) and the copper layer thickness wiring hole (34) are communicated, and a lead (L) is connected with the power chip (2) through the substrate horizontal wiring hole (12), the substrate thickness wiring hole (11) and the copper layer thickness wiring hole (34).
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| JP2009177038A (en) * | 2008-01-28 | 2009-08-06 | Hitachi Ltd | Power semiconductor module |
| CN201927886U (en) * | 2010-06-11 | 2011-08-10 | 西安炬光科技有限公司 | Horizontal array large-power semiconductor laser with substitutable chip |
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