KR101692490B1 - Power semiconductor module with water cooling - Google Patents

Power semiconductor module with water cooling Download PDF

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KR101692490B1
KR101692490B1 KR1020160102137A KR20160102137A KR101692490B1 KR 101692490 B1 KR101692490 B1 KR 101692490B1 KR 1020160102137 A KR1020160102137 A KR 1020160102137A KR 20160102137 A KR20160102137 A KR 20160102137A KR 101692490 B1 KR101692490 B1 KR 101692490B1
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cooling
substrate
power semiconductor
semiconductor module
groove
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Korean (ko)
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김영도
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주식회사 세미파워렉스
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Abstract

The present invention relates to a power semiconductor module having a water cooling structure. The power semiconductor module includes: a power semiconductor; a substrate having the power semiconductor bonded thereon and having a printed circuit layer formed thereon; and a cooling unit. The present invention improves cooling efficiency due to having an excellent liquid cooling unit.

Description

액체냉각구조를 갖는 전력반도체 모듈{POWER SEMICONDUCTOR MODULE WITH WATER COOLING}[0001] POWER SEMICONDUCTOR MODULE WITH WATER COOLING [0002]
본 발명은 액체냉각구조를 갖는 전력반도체 모듈에 관한 것으로서, 더욱 상세하게는, 기판 자체에 액체 냉각부를 구비하여 구조가 간결, 단순하고 안정적인 냉각성능을 확보함으로써 내구성과 상품성이 향상되며 제조원가를 절감할 수 있고, 기판 자체에 구성되는 액체냉각부의 열교환면적을 극대화할 수 있고 냉각수의 흐름이 원활하게 이루어지는 액체냉각구조를 갖는 전력반도체 모듈에 관한 것이다.The present invention relates to a power semiconductor module having a liquid cooling structure, and more particularly, to a power semiconductor module having a liquid cooling structure, and a liquid cooling portion is provided on the substrate itself to secure a simple structure and simple and stable cooling performance, thereby improving durability and merchantability, To a power semiconductor module having a liquid cooling structure capable of maximizing a heat exchange area of a liquid cooling portion formed in the substrate itself and allowing smooth flow of cooling water.
일반적으로, 전력반도체 모듈은 인버터, 컨버터, 무정전전원장치 등에 사용되고, 모터컨트롤용, 스위칭용, 파워 써플라이용 등으로 응용되는 전력용 모듈을 의미한다.Generally, a power semiconductor module refers to a power module used in an inverter, a converter, an uninterruptible power supply, and the like, and used for motor control, switching, and power supply.
이러한 전력반도체 모듈은 IGBT(insulated gate bipolar transistor), 모스펫(MOSFET), 또는 바이폴라 트랜지스터 등이 구비되는 것으로, 베이스 플레이트의 상면에 DBC(direct bonded copper) 기판을 배치하고, 이 DBC 기판에 반도체 칩을 부착하여 구성한다.The power semiconductor module includes an insulated gate bipolar transistor (IGBT), a MOSFET, or a bipolar transistor. A direct bonded copper (DBC) substrate is disposed on the upper surface of the base plate. Respectively.
도1은 일반적인 전력반도체 모듈의 구조를 나타낸 모식도로서, 이에 도시된 바와 같은 전력반도체 모듈은 인쇄회로 기판(13)의 상면에 1차 솔더링층(12)에 의해 전력반도체(11)가 접합되고, 인쇄회로 기판(13)의 저면에는 전력반도체(11)에서 생성된 열기를 냉각하도록 냉각부가 접속되어 있다.FIG. 1 is a schematic view illustrating a structure of a general power semiconductor module. In the power semiconductor module shown in FIG. 1, a power semiconductor 11 is bonded to a top surface of a printed circuit board 13 by a primary soldering layer 12, A cooling section is connected to the bottom surface of the printed circuit board 13 so as to cool the heat generated by the power semiconductor 11.
냉각부는 2차 솔더링층(14)에 접합되는 방열판(15), 이 방열판(15)의 저면에 도포되는 열전도 그리스층(16), 이 열전도 그리스층(16)에 배치되는 히트싱크(17)로 구성되어 있다.The cooling section includes a heat sink 15 bonded to the secondary soldering layer 14, a heat conductive grease layer 16 applied to the bottom surface of the heat sink 15, and a heat sink 17 disposed in the heat conductive grease layer 16 Consists of.
도1에 도시된 전력반도체 모듈은 전력반도체로부터 생성된 열기가 1차 솔더링층(12), 인쇄회로 기판(13), 2차 솔더링층(14), 방열판(15), 열전도 그리스층(16), 및 히트싱크(17) 순으로 전달되면서 방열되도록 되어 있다.The power semiconductor module shown in Fig. 1 is a module in which the heat generated from the power semiconductor is transferred to the primary soldering layer 12, the printed circuit board 13, the secondary soldering layer 14, the heat sink 15, And the heat sink 17 in this order.
하지만, 전술한 종래 전력반도체 모듈의 냉각부는 공냉 방식으로서 방열 특성이 낮아 열저항이 높으므로 통상의 전력반도체 PN 접합부의 최대허용온도(Tj)가 150~175℃ 정도임을 고려할 때 최대 정격 전류를 극대화하여 사용할 수 없는 한계점이 있다.However, since the cooling part of the conventional power semiconductor module described above has a low heat dissipation characteristic due to its low heat dissipation characteristic, the maximum allowable temperature (Tj) of a normal power semiconductor PN junction is about 150-175 캜. There is a limitation that can not be used.
그리고, 종래 전력반도체 모듈은 열저항으로 인해 제1 솔더링층(12) 및 제2 솔더링층(14)이 박리 현상이 초래하는 등 내구성이 저하되는 단점이 있다.In the conventional power semiconductor module, the first soldering layer 12 and the second soldering layer 14 are peeled off due to thermal resistance, and thus the durability is degraded.
또한, 종래 전력반도체 모듈의 냉각부는 구성 부품수가 지나치게 많아서 원자재 비용과 조립공수의 증가로 제조원가가 상승되고, 부피가 커서 제품을 컴팩트 하게 구현할 수 없는 한계점이 있다.Also, since the cooling part of the conventional power semiconductor module has an excessively large number of component parts, the manufacturing cost is increased due to the increase of raw material cost and assembling water amount, and the volume is so large that the product can not be compactly implemented.
한국공개특허 공개번호 제10-2000-0035714호 "냉각 수단을 포함하는 전력 전자 소자"Korean Patent Laid-Open Publication No. 10-2000-0035714 "Power electronic device including cooling means" 한국등록특허 등록번호 제10-0873418호 "핀 구조의 터미널을 갖는 전력용 반도체 모듈"Korean Registered Patent No. 10-0873418 entitled "Power Semiconductor Module Having a Pin-structured Terminal"
본 발명은 상기 내용에 착안하여 제안된 것으로, 기판 자체에 액체 냉각부를 구비하여 구조가 간결, 단순하고 안정적인 냉각성능을 확보함으로써 내구성과 상품성이 향상되며 제조원가를 절감할 수 있도록 한 액체냉각구조를 갖는 전력반도체 모듈을 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances and has a liquid cooling structure which has a simple structure and a simple and stable cooling performance by providing a liquid cooling part on a substrate itself to improve durability and merchantability, And a power semiconductor module.
본 발명의 다른 목적은, 기판 자체에 구성되는 액체냉각부의 열교환면적을 극대화할 수 있고 냉각수의 흐름이 원활하게 이루어지도록 함으로써 냉각효율이 향상되도록 한 액체냉각구조를 갖는 전력반도체 모듈을 제공하는 것이다.Another object of the present invention is to provide a power semiconductor module having a liquid cooling structure capable of maximizing a heat exchange area of a liquid cooling portion formed in a substrate itself and improving cooling efficiency by allowing cooling water to flow smoothly.
상기 목적을 달성하기 위해, 본 발명에 따른 액체냉각구조를 갖는 전력반도체 모듈은 액체냉각구조를 갖는 전력반도체 모듈에 있어서, 전력반도체; 상기 전력반도체가 접합되고 인쇄회로층이 형성된 기판; 및 상기 전력반도체로부터 생성된 열기를 냉각하는 냉각부를 포함하고, 상기 기판은 상면에 상기 인쇄회로층이 형성되는 상부기판과, 상기 상부기판의 저부에 접합되는 하부기판으로 구성되고, 상기 냉각부는 상기 상부기판의 저면에 요입, 형성되는 상부냉각홈과, 상기 상부냉각홈과 대응하도록 상기 하부기판의 상면에 요입, 형성되는 하부냉각홈에 의해 형성되는 유체이동실로 구성되는 것을 특징으로 한다.In order to achieve the above object, a power semiconductor module having a liquid cooling structure according to the present invention is a power semiconductor module having a liquid cooling structure, comprising: a power semiconductor; A substrate on which the power semiconductor is bonded and on which a printed circuit layer is formed; And a cooling unit for cooling the heat generated from the power semiconductor, wherein the substrate is composed of an upper substrate on which the printed circuit layer is formed, and a lower substrate bonded to a bottom of the upper substrate, And a fluid moving chamber formed by an upper cooling groove formed in the bottom surface of the upper substrate and a lower cooling groove formed in the upper surface of the lower substrate so as to correspond to the upper cooling groove.
상기 유체이동실은 상기 상부냉각홈에 하방 돌출되는 상부냉각핀과, 상기 하부냉각홈에 상방 돌출되는 하부냉각핀이 구비되어 있다.The fluid transfer chamber is provided with an upper cooling fin projecting downward in the upper cooling groove and a lower cooling fin projecting upward in the lower cooling groove.
바람직하게, 상기 상부냉각핀과, 상기 하부냉각핀은 열교환 면적이 증대되고 냉각수가 파형구조의 유로를 가지면서 이동되도록 서로 엇갈리게 형성될 수 있다.Preferably, the upper cooling fins and the lower cooling fins may be staggered so that the heat exchange area is increased and the cooling water is moved with the flow path of the corrugated structure.
한편, 상기 유체이동실은 냉각수가 유입되는 유입로, 냉각수가 배출되는 배출로, 및 상기 유입로와 상기 배출로 사이에 병렬 구조로 분기되는 복수의 열교환부로 구성될 수 있다.The fluid transfer chamber may be composed of an inflow path through which cooling water flows, a discharge path through which cooling water is discharged, and a plurality of heat exchange units branched in parallel between the inflow path and the discharge path.
여기서, 상기 열교환부는 상기 유입로 연결되는 냉각수유입메니폴드부와, 상기 배출로와 연결되는 냉각수배출메니폴드부, 상기 냉각수유입메니폴드부와 상기 냉각수배출메니폴드부 사이에 병렬구조로 연결, 형성되는 복수의 브랜치열교환로로 구성되고, 상기 브랜치열교환로에 상기 상부냉각핀 및 상기 하부냉각핀이 돌출, 형성될 수 있다.The heat exchanger includes a cooling water inflow manifold connected to the inflow path, a cooling water discharge manifold connected to the discharge path, a plurality of branches connected in parallel between the cooling water inflow manifold and the cooling water discharge manifold, And the upper cooling fin and the lower cooling fin may protrude from the branch heat exchanger.
아울러, 상기 상부기판은 세라믹기판으로 구성되고, 상기 하부기판은 동기판 또는 알루미늄기판으로 구성되며, 상기 인쇄회로층은 동 또는 은 페이스트가 인쇄, 소성되어 형성될 수 있다.In addition, the upper substrate may be formed of a ceramic substrate, the lower substrate may be formed of a synchronous plate or an aluminum substrate, and the printed circuit layer may be formed by printing or firing copper or silver paste.
본 발명에 따른 액체냉각구조를 갖는 전력반도체 모듈에 의하면, 기판 자체에 냉각효율이 우수한 액체 냉각부를 구비하고 있으므로 냉각효율을 향상시킬 수 있고, 특히, 유체이동실의 내부에 엇갈리게 상부냉각핀 및 하부냉각핀이 형성되어 내부 유로가 파형구조로 굴곡 되어 냉각수의 흐름을 안정적으로 유지하면서도 열교환 면적을 극대화할 수 있어서 냉각효율이 현저히 향상되는 장점이 있다.According to the power semiconductor module having the liquid cooling structure according to the present invention, since the substrate itself has the liquid cooling portion having excellent cooling efficiency, it is possible to improve the cooling efficiency. Particularly, The cooling fins are formed so that the inner flow path is bent into the corrugated structure to maximize the heat exchange area while stably maintaining the flow of the cooling water, thereby remarkably improving the cooling efficiency.
이로 인해, 전력반도체는 열저항이 줄어들어 최대 정격 전류를 극대화하여 안정적으로 사용할 수 있고, 열저항의 감소로 인한 솔더링층의 박리 현상을 방지할 수 있어서 내구성이 향상되는 효과가 있다.As a result, the power semiconductor has a reduced heat resistance, maximizes the maximum rated current, and can be used stably, and the peeling phenomenon of the soldering layer due to the reduction of thermal resistance can be prevented, thereby improving durability.
그리고, 본 발명에 따른 액체냉각구조를 갖는 전력반도체 모듈에 의하면, 종래 전력반도체 모듈에서 갖추고 있던 2차 솔더링층, 그리스층, 히트싱크 등의 구성요소를 구비하지 않아도 되므로 원자재비용 및 조립공수의 절감을 통해 제조원가를 현저히 줄일 수 있고, 두께와 부피가 작아서 제품을 컴팩트하게 구현할 수 있으므로 상품성이 향상되는 장점이 있다.According to the power semiconductor module having the liquid cooling structure according to the present invention, it is not necessary to provide components such as the secondary soldering layer, the grease layer, and the heat sink, which are conventionally provided in the power semiconductor module, The manufacturing cost can be remarkably reduced, the thickness and the volume can be reduced, and the product can be compactly implemented, thereby improving the merchantability.
도1은 일반적인 전력반도체 모듈의 구조를 나타낸 모식도,
도2는 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈의 전체적인 구조를 나타낸 사시도,
도3은 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈의 주요 구성요소의 분리된 상태를 나타낸 분리사시도,
도4는 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈의 요부 단면도로서, 도2의 A부 확대 단면도,
도5a는 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈의 상부기판을 나타낸 평면도,
도5b는 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈의 하부기판을 나타낸 평면도이다.
1 is a schematic view showing the structure of a general power semiconductor module,
2 is a perspective view illustrating the overall structure of a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention;
3 is an exploded perspective view showing a separated state of main components of a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention;
4 is a partial cross-sectional view of a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention,
5A is a plan view of an upper substrate of a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention,
5B is a plan view of a lower substrate of a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention.
이하, 첨부된 도면을 참조하여 본 발명의 실시예를 구체적으로 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도2는 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈의 전체적인 구조를 나타낸 사시도, 도3은 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈의 주요 구성요소의 분리된 상태를 나타낸 분리사시도, 도4는 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈의 요부 단면도로서, 도2의 A부 확대 단면도이다.FIG. 2 is a perspective view showing the overall structure of a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention. FIG. 3 is a perspective view of a main component of a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention. FIG. 4 is a cross-sectional view of a main part of a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention, and is an enlarged cross-sectional view of part A of FIG. 2.
도2 내지 도4를 참조하면, 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈은 기판 자체에 액체 냉각부를 구비하여 구조가 간결, 단순하고 안정적인 냉각성능을 확보할 수 있도록 하기 위한 것으로 전력반도체(1), 전력반도체(1)가 접합되고 인쇄회로층(2)이 형성된 기판(3), 및 전력반도체(1)로부터 생성된 열기를 냉각하는 냉각부(4)로 구성되어 있다.2 to 4, a power semiconductor module having a liquid cooling structure according to an exemplary embodiment of the present invention includes a liquid cooling unit on a substrate itself, so that a simple structure, simple and stable cooling performance can be secured A substrate 3 on which a power semiconductor 1 and a power semiconductor 1 are bonded and a printed circuit layer 2 is formed and a cooling section 4 for cooling the heat generated from the power semiconductor 1 .
상기 기판(3)은 상면에 인쇄회로층(2)이 형성되는 상부기판(31)과, 이 상부기판(31)의 저부에 접합되는 하부기판(32)으로 구성되되, 이 상부기판(31)과 하부기판(32) 자체에 냉각수와 같은 냉각용 액체가 유동되는 냉각부(4)가 형성되어 있다.The substrate 3 is composed of an upper substrate 31 on which a printed circuit layer 2 is formed and a lower substrate 32 bonded to the bottom of the upper substrate 31. The upper substrate 31, And a cooling unit 4 through which a cooling liquid such as cooling water flows is formed on the upper substrate 32 and the lower substrate 32 itself.
보다 구체적으로 설명하면, 상기 냉각부(4)는 상부기판(31)의 저면에 요입, 형성되는 상부냉각홈(4a)과, 이 상부냉각홈(4a)과 대응하도록 하부기판(32)의 상면에 요입, 형성되는 하부냉각홈(4b)이 서로 형합되어 형성되는 유체이동실(41)로 구성된다.More specifically, the cooling unit 4 includes an upper cooling groove 4a formed in the bottom surface of the upper substrate 31 and a lower cooling groove 4b formed in the upper surface of the lower substrate 32 so as to correspond to the upper cooling groove 4a. And a fluid movement chamber 41 formed by coalescing the lower cooling grooves 4b, which are formed in and cooperated with each other.
그리고, 상기 유체이동실(41)에는 상부냉각홈(4a)에 하방 돌출되는 상부냉각핀(4c)과, 하부냉각홈(4b)에 상방 돌출되는 하부냉각핀(4d)이 구성되어 있다.The fluid movement chamber 41 is formed with an upper cooling fin 4c projecting downward in the upper cooling groove 4a and a lower cooling fin 4d projecting upward in the lower cooling groove 4b.
바람직하게 상기 상부냉각핀(4c) 및 하부냉각핀(4d)은 열교환 면적이 증대되고 냉각수가 파형구조의 유로를 가지면서 이동되도록 서로 엇갈리게 형성된 특징을 갖는다.Preferably, the upper cooling fin 4c and the lower cooling fin 4d are formed to be shifted from each other such that the heat exchange area is increased and the cooling water is moved while having the flow path of the corrugated structure.
한편, 상부기판(31)은 대략 직사각판 형상을 갖는 몸체의 모서리 부위에 체결공(311)이 천공된 구조로 형성되는 것으로, 인쇄회로층(2)을 형성할 수 있고 절연 및 내열 특성을 갖는 소재라면 특별한 제한 없이 다양한 소재로 형성될 수 있지만, 본 실시예에서는 세라믹기판으로 구성되어 있다. 여기서, 세라믹기판은 Al2O3 기판 또는 AlN (질화알루미늄)기판이 선택되어 적용될 수 있다.On the other hand, the upper substrate 31 is formed with a structure in which a fastening hole 311 is formed in a corner portion of a body having a substantially rectangular plate shape, so that the printed circuit layer 2 can be formed, Any material can be formed of various materials without particular limitation, but in the present embodiment, it is formed of a ceramic substrate. Here, the ceramic substrate is made of Al 2 O 3 A substrate or an AlN (aluminum nitride) substrate may be selected and applied.
그리고, 상기 하부기판(32)은 상부기판(31)과 대응하도록 직사각판 형상의 몸체에 체결공(321)이 천공된 구조로 형성되는 것으로, 상부기판(31)과의 접합이 가능하고 절연 및 내열 특성을 갖는 소재라면 특별한 제한 없이 다양한 소재로 형성될 수 있지만 본 실시예에서는 냉각성능을 고려하여 열전도도가 높은 동기판 또는 알루미늄기판으로 구성되어 있다.The lower substrate 32 has a structure in which a fastening hole 321 is formed in a rectangular plate-shaped body so as to correspond to the upper substrate 31. The lower substrate 32 can be joined to the upper substrate 31, Any material having heat resistance characteristics can be formed of various materials without particular limitation, but in the present embodiment, it is composed of a synchronous plate or an aluminum substrate having high thermal conductivity in consideration of cooling performance.
상기 인쇄회로층(2)은 동 또는 은 페이스트가 상부기판(31)에 인쇄된 후 소성되어 형성된다.The printed circuit layer 2 is formed by printing copper or silver paste on the upper substrate 31 and then firing.
첨부도면, 도5a는 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈의 상부기판을 나타낸 평면도로서 상부기판의 냉각부가 표현되도록 뒤집은 상태에서 나타나는 형상을 도시한 것이고, 도5b는 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈의 하부기판을 나타낸 사시도이다. 그리고, 도5a 및 도5b의 굵은 실선은 냉각수의 흐름을 나타낸 화살표이다.FIG. 5A is a plan view of an upper substrate of a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention, 1 is a perspective view illustrating a lower substrate of a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention. 5A and 5B are thick arrows showing the flow of cooling water.
도5a 및 도5b를 참조하여, 본 발명의 주요 구성요소인 상부기판(31), 하부기판(32) 및 냉각부(4)에 대해 보다 구체적으로 설명한다.5A and 5B, the upper substrate 31, the lower substrate 32, and the cooling unit 4, which are major components of the present invention, will be described in more detail.
도5a 및 도5b를 참조하면, 냉각부(4)는 상부기판(31)과 하부기판(32)이 서로 포개어져 접합된 상태에서 서로 대응되게 형성된 상부냉각홈(4a)과, 하부냉각홈(4b)에 의해 챔버 형태의 유체이동실(41)로 구성되어 있다. 5A and 5B, the cooling unit 4 includes an upper cooling groove 4a and a lower cooling groove 4b formed in a state where the upper substrate 31 and the lower substrate 32 are overlapped and joined to each other, And a fluid transfer chamber 41 in the form of a chamber.
상기 유체이동실(41)은 냉각수가 유입되는 유입로(411), 냉각수가 배출되는 배출로(412), 및 유입로(411)와 배출로(412) 사이에 병렬 구조로 분기되는 복수의 열교환부(413)로 구성되어 있다.The fluid transfer chamber 41 is provided with an inflow path 411 through which cooling water flows, a discharge path 412 through which cooling water is discharged, and a plurality of heat exchanging tubes 412 branched from the inflow path 411 and the discharge path 412, (413).
상기 열교환부(413)는 유입로(411)와 연결되는 냉각수유입메니폴드부(413a)와, 배출로와 연결되는 냉각수배출메니폴드부(413b), 냉각수유입메니폴드부(413a)와 냉각수배출메니폴드부(413b) 사이에 병렬구조로 연결, 형성되는 복수의 브랜치열교환로(413c)가 구비되어 있다.The heat exchanging part 413 includes a cooling water inflow manifold part 413a connected to the inflow path 411, a cooling water discharge manifold part 413b connected to the discharge path, a cooling water inflow manifold part 413a and a cooling water discharge manifold part And a plurality of branch heat exchangers 413c connected in parallel to each other.
그리고 브랜치열교환로(413c)는 좁은 유로 형태로 요입되는 상부냉각홈과 하부냉각홈에 의해 형성되는 것으로, 상부냉각홈(4a)에는 복수의 상부냉각핀(4c)이 유로를 향해 하방 돌출되어 있고, 하부냉각홈(4b)에는 복수의 하부냉각핀(4d)이 유로를 향해 상방 돌출되어 있다.The branch heat exchanging passage 413c is formed by an upper cooling groove and a lower cooling groove recessed in the form of a narrow flow path. A plurality of upper cooling fins 4c protrude downward toward the flow path in the upper cooling groove 4a And a plurality of lower cooling fins 4d are upwardly projected toward the flow path in the lower cooling groove 4b.
이때, 상기 상부냉각핀(4c) 및 하부냉각핀(4d)은 도4에 도시된 바와 같이 유로가 파형구조로 굴곡 되도록 서로 엇갈리게 돌출되어 있다.At this time, as shown in FIG. 4, the upper cooling fin 4c and the lower cooling fin 4d are staggered from each other so that the flow path is bent in a corrugated structure.
한편, 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈은 외부로부터 공급되는 냉각수의 유입을 위한 냉각수공급라인(미도시)이 유입로(411)의 입구측에 접속되고, 냉각수의 배출을 위한 냉각수배출라인(미도시)이 배출로(412)의 말단에 접속된다. In the power semiconductor module having the liquid cooling structure according to an embodiment of the present invention, a cooling water supply line (not shown) for introducing cooling water supplied from the outside is connected to the inlet side of the inflow path 411, A coolant discharge line (not shown) for discharge is connected to the end of the discharge passage 412.
그리고, 본 발명에 따른 액체냉각구조를 갖는 전력반도체 모듈은 도2에 도시된 바와 같이 자동차에 적용되도록 구성된 것이므로 유입로(411)와 배출로(412)에 자동차에 마련된 엔진 냉각수라인(미도시)으로부터 분기된 냉각수공급라인(미도시)과 냉각수배출라인(미도시)과 접속된다. The power semiconductor module having the liquid cooling structure according to the present invention is configured to be applied to an automobile as shown in FIG. 2, so that an engine cooling water line (not shown) provided in an automobile in the inflow path 411 and the discharge path 412, (Not shown) and a cooling water discharge line (not shown).
이하 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈의 작용을 간략하게 설명한다.Hereinafter, the operation of a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention will be briefly described.
전술한 바와 같은 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈은 인쇄회로층(2)이 형성된 상부기판(31)과 하부기판(32)를 접합하게 되면 상부기판(31)의 저면에 요입된 상부냉각홈(4a)과, 하부기판(32)의 상면에 요입된 하부냉각홈(4b)이 서로 형합되어 유체이동실(41)로 형성된다.The power semiconductor module having the liquid cooling structure according to an embodiment of the present invention may be manufactured by bonding the upper substrate 31 and the lower substrate 32 having the printed circuit layer 2 thereon, The upper cooling groove 4a recessed in the bottom surface and the lower cooling groove 4b recessed in the upper surface of the lower substrate 32 are formed as a fluid movement chamber 41 by being joined together.
그리고, 인쇄회로층(2)에 솔더링층(미도시)을 매개로 전력반도체(1)을 접합하고, 알루미늄 등으로 형성된 와이어(미도시)를 설계된 회로 패튼으로 접속하게 되면 조립이 완료된다.Then, when the power semiconductor 1 is bonded to the printed circuit layer 2 via a soldering layer (not shown), and a wire (not shown) made of aluminum or the like is connected by a designed circuit pattern, the assembly is completed.
이와 같이 완성된 전력반도체 모듈을 자동차의 정해진 위치에 조립하고, 유체이동실(41)의 유입로(411)와 배출로(412)에 자동차의 엔진 냉각수라인(미도시)으로부터 분기된 냉각수공급라인과 냉각수배출라인과 접속하게 되면 엔진 냉각용 냉각수에 의해 냉각과정이 수행된다. The power semiconductor module thus assembled is assembled at a predetermined position of the automobile and the cooling water supply line 411 branched from the engine cooling water line (not shown) of the automobile is connected to the inflow path 411 and the discharge path 412 of the fluid transfer chamber 41, And the cooling water discharge line, the cooling process is performed by the cooling water for engine cooling.
즉, 본 발명의 일 실시예에 따른 액체냉각구조를 갖는 전력반도체 모듈은 사용과정에서 전력반도체(1)로부터 생성된 열기가 솔더링층을 통해 기판으로 전달되면 상부기판(31)과 하부기판(32) 내부에 형성된 냉각부(4)에 의해 냉각과정이 수행된다.That is, in a power semiconductor module having a liquid cooling structure according to an embodiment of the present invention, when heat generated from the power semiconductor 1 is transferred to the substrate through the soldering layer in use, the upper substrate 31 and the lower substrate 32 The cooling process is performed by the cooling unit 4 formed inside the heat exchanger.
보다 구체적으로 설명하면, 도5a 및 도5b에 도시된 바와 같이 엔진의 냉각을 위해 마련된 자동차의 냉각장치로부터 냉각수공급라인을 경유하여 유입로(411)로 냉각수가 유입되면, 양쪽 냉각수유입메니폴드부(413a)로 분배되고 연이어 복수의 브랜치열교환로(413c)로 유동되면서 냉각작용을 수행한다. 이후 냉각에 이용된 냉각수는 냉각수배출메니폴드부(413b)로 모아진 다음 배출로(412)를 통해 냉각수배출라인으로 배출된다. More specifically, as shown in FIGS. 5A and 5B, when cooling water flows into the inflow path 411 via a cooling water supply line from a cooling apparatus for an automobile provided for cooling the engine, both cooling water inflow manifolds 413a, and then flows to the plurality of branch heat exchange paths 413c, thereby performing a cooling operation. The cooling water used for cooling is collected by the cooling water discharge manifold portion 413b and then discharged to the cooling water discharge line through the discharge passage 412. [
그리고, 브랜치열교환로(413c)는 도4에 도시된 바와 같이 상부냉각핀(4c) 및 하부냉각핀(4d)이 엇갈리게 형성되어 내부 유로가 파형구조로 굴곡 되어 냉각수의 흐름을 안정적으로 유지하면서도 열교환 면적이 상대적으로 증대되어 냉각효율이 향상되는 장점이 있다.4, the upper cooling fin 4c and the lower cooling fin 4d are formed to be staggered so that the internal flow path is bent in a corrugated structure to stably maintain the flow of the cooling water, The area is relatively increased and cooling efficiency is improved.
이로 인해, 전력반도체(1)는 열저항이 줄어들어 최대 정격 전류를 극대화하여 안정적으로 사용할 수 있고, 열저항으로 인한 솔더링층의 박리 현상을 미연에 방지할 수 있어서 내구성이 향상되는 장점이 있다.Therefore, the power semiconductor 1 has the advantage that the maximum rated current can be maximized and used stably by reducing the thermal resistance, and the peeling phenomenon of the soldering layer due to thermal resistance can be prevented beforehand, thereby improving durability.
특히, 전술한 바와 같이 본 발명에 따른 액체냉각구조를 갖는 전력반도체 모듈은 종래 전력반도체 모듈에서 갖추고 있던 2차 솔더링층, 그리스층, 히트싱크 등의 구성요소를 구비하지 않아도 되므로 원자재비용 및 조립공수의 절감을 통해 제조원가를 현저히 줄일 수 있을 뿐만 아니라 전체 두께와 부피가 작아지게 되어 제품을 컴팩트하게 구현할 수 있으므로 상품성이 향상되고, 자동차 등의 피설치부 설계를 간결, 단순화할 수 있는 장점이 있다.Particularly, as described above, the power semiconductor module having the liquid cooling structure according to the present invention does not need components such as the secondary soldering layer, the grease layer, and the heat sink, which are conventionally provided in the power semiconductor module, The manufacturing cost can be remarkably reduced, and the total thickness and volume can be reduced. As a result, the product can be compactly implemented, which improves the merchantability and simplifies and simplifies the design of parts to be mounted on automobiles.
이상에서 설명한 것은 본 발명에 따른 액체냉각구조를 갖는 전력반도체 모듈을 실시하기 위한 하나의 실시예에 불과한 것으로서, 본 발명은 상기한 실시예에 한정되지 않고, 이하의 특허청구범위에서 청구하는 바와 같이 본 발명의 요지를 벗어나지 않은 범위 내에서 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경실시가 가능한 범위까지 본 발명의 기술적 사상이 있다고 할 것이다.The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit and scope of the present invention. For example, It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
상기한 실시예에서 사용한 용어는 단지 특정한 실시예를 설명하기 위해 사용된 것으로, 본 발명을 한정하려는 의도가 아니다. 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 출원에서, "포함하다" 또는 "가지다" 등의 용어는 명세서상에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다.The terms used in the above embodiments are used only to describe specific embodiments and are not intended to limit the present invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.
1:전력반도체
2:인쇄회로층
3:기판
31:상부기판
32:하부기판
4:냉각부
4a:상부냉각홈
4b:하부냉각홈
4c:상부냉각핀
4d:하부냉각핀
41:유체이동실
411:유입로
412:배출로
413:열교환부
1: Power semiconductor
2: printed circuit layer
3: substrate
31: upper substrate
32: Lower substrate
4: Cooling section
4a: upper cooling groove
4b: Lower cooling groove
4c: upper cooling pin
4d: Lower cooling pin
41: Fluid transfer chamber
411: Inflow path
412:
413: Heat exchanger

Claims (6)

  1. 액체냉각구조를 갖는 전력반도체 모듈에 있어서,
    전력반도체; 상기 전력반도체가 접합되고 인쇄회로층이 형성된 기판; 및 상기 전력반도체로부터 생성된 열기를 냉각하는 냉각부를 포함하고, 상기 기판은 상면에 상기 인쇄회로층이 형성되는 상부기판과, 상기 상부기판의 저부에 접합되는 하부기판으로 구성되고, 상기 냉각부는 상기 상부기판의 저면에 요입, 형성되는 상부냉각홈과, 상기 상부냉각홈과 대응하도록 상기 하부기판의 상면에 요입, 형성되는 하부냉각홈에 의해 형성되는 유체이동실로 구성되고,
    상기 유체이동실은 상기 상부냉각홈에 하방 돌출되는 상부냉각핀과, 상기 하부냉각홈에 상방 돌출되는 하부냉각핀이 구비되되, 상기 상부냉각핀과, 상기 하부냉각핀은 열교환 면적이 증대되고 냉각수가 파형구조의 유로를 가지면서 이동되도록 서로 엇갈리게 형성되는 한편,
    상기 유체이동실은 냉각수가 유입되는 유입로, 냉각수가 배출되는 배출로, 및 상기 유입로와 상기 배출로 사이에 병렬 구조로 분기되는 복수의 열교환부로 구성되되, 상기 열교환부는 상기 유입로 연결되는 냉각수유입메니폴드부, 상기 배출로와 연결되는 냉각수배출메니폴드부, 상기 냉각수유입메니폴드부와 상기 냉각수배출메니폴드부 사이에 병렬구조로 연결, 형성되는 복수의 브랜치열교환로로 구성되고, 상기 브랜치열교환로에 상기 상부냉각핀 및 상기 하부냉각핀이 돌출, 형성된 것을 특징으로 하는 액체냉각구조를 갖는 전력반도체 모듈.
    A power semiconductor module having a liquid cooling structure,
    Power semiconductor; A substrate on which the power semiconductor is bonded and on which a printed circuit layer is formed; And a cooling unit for cooling the heat generated from the power semiconductor, wherein the substrate is composed of an upper substrate on which the printed circuit layer is formed, and a lower substrate bonded to a bottom of the upper substrate, And a fluid moving chamber formed by an upper cooling groove formed in the bottom surface of the upper substrate and a lower cooling groove formed in the upper surface of the lower substrate so as to correspond to the upper cooling groove,
    Wherein the fluid transfer chamber is provided with an upper cooling fin protruding downward in the upper cooling groove and a lower cooling fin protruding upward in the lower cooling groove, wherein the upper cooling fin and the lower cooling fin have an increased heat exchange area, Are formed to be shifted from one another so as to move while having a flow path of a corrugated structure,
    Wherein the fluid transfer chamber is constituted by an inflow path through which cooling water flows, a discharge path through which cooling water is discharged, and a plurality of heat exchange sections branched in a parallel structure between the inflow path and the discharge path, A manifold portion, a manifold outlet portion connected to the exhaust passage, and a plurality of branch heat exchanger passages formed in parallel between the manifold portion and the manifold outlet manifold portion, Wherein the cooling fin and the lower cooling fin protrude and are formed.
  2. 삭제delete
  3. 삭제delete
  4. 삭제delete
  5. 삭제delete
  6. 제1항에 있어서,
    상기 상부기판은 세라믹기판으로 구성되고,
    상기 하부기판은 동기판 또는 알루미늄기판으로 구성되며,
    상기 인쇄회로층은 동 또는 은 페이스트가 인쇄, 소성되어 형성되는 것을 특징으로 하는 액체냉각구조를 갖는 전력반도체 모듈.
    The method according to claim 1,
    Wherein the upper substrate comprises a ceramic substrate,
    Wherein the lower substrate comprises a synchronous plate or an aluminum substrate,
    Wherein the printed circuit layer is formed by printing or firing a copper or silver paste.
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