CN117347814A - High-temperature test structure of semiconductor device and gravity type normal temperature and high temperature tester - Google Patents
High-temperature test structure of semiconductor device and gravity type normal temperature and high temperature tester Download PDFInfo
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- 238000012360 testing method Methods 0.000 title claims abstract description 237
- 239000004065 semiconductor Substances 0.000 title claims abstract description 171
- 230000005484 gravity Effects 0.000 title claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 192
- 230000007246 mechanism Effects 0.000 claims abstract description 153
- 238000012546 transfer Methods 0.000 claims abstract description 27
- 230000000903 blocking effect Effects 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 37
- 238000009413 insulation Methods 0.000 claims description 22
- 238000004321 preservation Methods 0.000 claims description 16
- 238000011084 recovery Methods 0.000 claims description 14
- 230000002159 abnormal effect Effects 0.000 claims description 12
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- 230000000670 limiting effect Effects 0.000 claims description 10
- 210000001503 joint Anatomy 0.000 claims description 9
- 238000011144 upstream manufacturing Methods 0.000 claims description 7
- 230000006835 compression Effects 0.000 claims description 6
- 238000007906 compression Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 5
- 230000001012 protector Effects 0.000 claims description 4
- 238000005381 potential energy Methods 0.000 claims description 3
- 238000011056 performance test Methods 0.000 abstract description 12
- 230000006872 improvement Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000003825 pressing Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000007599 discharging Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G47/00—Article or material-handling devices associated with conveyors; Methods employing such devices
- B65G47/74—Feeding, transfer, or discharging devices of particular kinds or types
- B65G47/88—Separating or stopping elements, e.g. fingers
- B65G47/8876—Separating or stopping elements, e.g. fingers with at least two stops acting as gates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G47/00—Article or material-handling devices associated with conveyors; Methods employing such devices
- B65G47/74—Feeding, transfer, or discharging devices of particular kinds or types
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention relates to the technical field of semiconductor performance test, and discloses a semiconductor device high-temperature test structure and a gravity type normal-temperature and high-temperature tester, wherein the semiconductor device high-temperature test structure comprises an inclined platen, a transfer loading mechanism, a heating platform and a heating test mechanism, which are sequentially arranged on the inclined platen from top to bottom.
Description
Technical Field
The invention relates to the technical field of semiconductor performance test, in particular to a high-temperature test structure of a semiconductor device and a gravity normal-temperature and high-temperature tester.
Background
In the post-package test link of semiconductor discrete devices, in addition to conventional normal temperature tests, some devices also need to be tested at high temperature. Some semiconductor discrete devices can cause the temperature of the devices to rise in the working process under specific working conditions (such as high current and high voltage), so that the standard of various electrical parameters of the semiconductor discrete devices is the most basic guarantee of the normal working of the devices under specific temperature or within a certain temperature range. The high temperature test of semiconductor discrete devices is a necessary test method for detecting whether the electrical parameters of the devices reach standards under specific temperature conditions.
The conventional method for performing high temperature testing is: the semiconductor discrete device to be tested is placed in a high-temperature box, the device is heated by the high-temperature box, the temperature in the high-temperature box is raised to a preset temperature within a certain time, then the temperature in the box needs to be stably maintained for a certain period of time, and the temperature of the device in the box is ensured to reach the preset temperature. After the temperature stabilization time is reached, the semiconductor discrete device to be tested is quickly taken out from the box and placed in the test seat, and the semiconductor discrete device is subjected to relevant electrical parameter test. The biggest problem of this method is that the temperature of the semiconductor discrete device is not reduced in the process of taking out from the high temperature box to the test, if the temperature exceeds a certain range of a specific temperature, the test accuracy is affected, and the test efficiency is low.
If the test seat is installed in the high temperature box, the test can be performed in the high temperature box. Although the temperature will not change and the testing accuracy will not be affected, the testing efficiency will be low, the method is only suitable for laboratory sampling test, and the whole test can not be performed on the production line.
It can be seen that there is a need for improvements and improvements in the art.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide a high temperature test structure for semiconductor devices and a gravity type normal temperature and high temperature tester, which are suitable for the requirement of full inspection of production lines and solve the problem that the temperature of semiconductor devices is lowered due to exposure in the transfer process, so that the test temperature is not satisfied.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the utility model provides a semiconductor device high temperature test structure, includes the inclined platen, from last to setting up in proper order and move and carry feed mechanism, heating platform and the heating test mechanism on the inclined platen, but the heating platform includes the layer board of side-to-side slip setting on the inclined platen, the first sideslip actuating mechanism of drive layer board removal and the heat preservation box of setting on the layer board, be provided with the heating track that N left and right sides side by side and be used for heating the first heating element of heating track in the heat preservation box, N is greater than 1's integer, the inclination of heating track is the same with the inclination of inclined platen, every heating track's output all is equipped with and is used for blocking the semiconductor device to the fender material subassembly of downstream transport, the heating test mechanism includes the test track the same with inclined platen inclination, is used for carrying out the high temperature test mechanism of semiconductor device on the test track, the upper reaches of heating test mechanism is equipped with the deblocking mechanism, deblocking mechanism is used for removing just blocking the semiconductor device that the heating track on the test track input end links up to the semiconductor device that can be carried to the test device on the test track.
As a further improvement of the technical scheme, the material blocking assembly comprises a material blocking rod, a spring, a pull rod lug, an elastic washer and a locking nut, wherein the material blocking rod comprises a material blocking shaft head, a limiting part, a main body part and a threaded part which are sequentially connected from top to bottom; the heating track's output is offered and is supplied keep off the shaft hole that the material spindle nose runs through, the diameter of spacing portion is all greater than the diameter that keeps off material spindle nose and main part, the main part cover has the spring, the elastic potential energy of spring turns into the fender material spindle nose that keeps off the material pole and stretches out heating track's kinetic energy, the pull rod lug cover is on screw thread portion and cooperates with lock nut through elastic washer, fixes the terminal at the main part with the pull rod lug, the main part runs through the heat preservation box.
As a further improvement of the technical scheme, the gear releasing mechanism comprises a pull rod cylinder and a draw hook connected with the output end of the pull rod cylinder, the pull rod convex blocks on each gear component can transversely move along the way draw hook in the non-working state of the gear releasing mechanism, and the pull rod cylinder is used for driving the gear rod to move downwards through the draw hook so that the gear shaft heads of the gear rod retract into the heating track.
As a further improvement of the above technical solution, the test track is provided with a test station, the high temperature test mechanism includes a control module, power connection modules located at two sides of the test station, a test driving mechanism, a first stopper disposed at an upstream of the power connection modules, and a second stopper disposed at a downstream of the power connection modules, the first stopper is used for stopping and releasing a set number of semiconductor devices to be transferred to the test station, and the second stopper is used for limiting the semiconductor devices of the test track at the test station or releasing the semiconductor devices to be transferred along a downstream direction; the test driving mechanism is used for driving the two power connection modules to move or reset to one side of the semiconductor device respectively, so that a plurality of power connection terminals on the power connection modules are respectively in butt joint with pins of each semiconductor device one by one so as to carry out high-temperature power-on test on the semiconductor device; the control module is used for respectively identifying the group where the semiconductor device with the detection abnormality exists in the high Wen Tongdian test and the group where all the qualified semiconductor devices exist.
As a further improvement of the technical scheme, the first stopper comprises a pneumatic clamping finger, a pressing rod arranged on one finger of the pneumatic clamping finger and a first stop block arranged on the other finger of the pneumatic clamping finger, wherein the pressing rod is positioned at the upstream of the first stop block; when fingers of the pneumatic clamping fingers are opened, the compression bar releases the semiconductor device, and the first stop block stops the semiconductor device from sliding downwards; when the fingers of the pneumatic clamping fingers are contracted, the compression bar blocks the semiconductor device from sliding downwards, and the first stop block releases the semiconductor device; the second stopper comprises a sliding table cylinder and a second stop block arranged on a sliding table of the sliding table cylinder.
As a further improvement of the technical scheme, the transferring and feeding mechanism comprises a transverse guide rail transversely extending to be arranged on the inclined platen, a sliding block in sliding connection with the transverse guide rail, a feeding rail arranged on the sliding block, a third stopper and a fourth stopper arranged on the feeding rail, and a second transverse moving driving mechanism for driving the sliding block to move, wherein the fourth stopper is positioned at the downstream of the third stopper, and the third stopper and the fourth stopper are mutually matched and release the semiconductor devices one by one to the corresponding heating rails.
As the further improvement of above-mentioned technical scheme, the heat preservation box includes the heat insulating board down, is used for covering the heat insulating board on the heating track and sets up the heat insulating curb plate in heat insulating board down and in heat insulating board both sides, first heating element includes the hot plate and the many of being in that are in with heating track bottom surface heat conduction are connected first heating rod on the hot plate, the hot plate passes through temperature protector and prevents the overtemperature.
As a further improvement of the technical scheme, the test track is arranged on the heat insulation base, the second heating assembly comprises a second heating rod which extends along the length direction of the test track and is in heat conduction connection with the test track, and the test track is provided with a heat insulation cover plate.
As a further improvement of the above technical solution, the heating track is provided with 10 strips.
The invention also provides a gravity type normal temperature and high temperature testing machine, which comprises a reversing feeding mechanism, a material moving mechanism, two groups of normal temperature testing mechanisms, the semiconductor device high temperature testing structure, a high temperature testing sorting mechanism and a discharging mechanism which are arranged on the inclined bedplate from top to bottom in sequence, wherein the two groups of normal temperature testing mechanisms are arranged in parallel from left to right; a normal temperature test abnormality recovery assembly is arranged beside the heating platform, and a high temperature test abnormality recovery assembly is arranged beside the blanking mechanism; the reversing feeding mechanism is provided with two feeding tracks, one feeding track is connected with the vibration disc feeding assembly, and the other feeding track is connected with the tubular feeding assembly; the transfer and loading mechanism is used for transferring the semiconductor devices on the feeding track to the corresponding normal temperature testing mechanism, and is used for transferring the semiconductor devices which are qualified in normal temperature testing to the heating platform and transferring the semiconductor devices which are abnormal in normal temperature testing to the normal temperature testing abnormal recovery assembly; the high-temperature test sorting mechanism is used for transferring the semiconductor devices which are qualified in high-temperature test to the blanking mechanism and transferring the semiconductor devices which are abnormal in high-temperature test to the high-temperature test abnormal recovery assembly, and the inclined table plate is arranged on the rack.
The invention has the beneficial effects that: compared with the prior art, the high-temperature test structure for the semiconductor devices is applied to performance test of a large number of semiconductor devices in a production line, the plurality of heating tracks which are arranged side by side and can transversely move integrally are arranged, the transfer and feeding mechanism is used for conveying the semiconductor devices to the set heating tracks for full heating, if one of the heating tracks reaches the test temperature, the heating track can be moved to be in butt joint with the test track, the semiconductor devices can be slidingly transferred to the test track from the heating track without exposure, the transfer path is greatly shortened, the problem that the temperature of the semiconductor devices is reduced due to exposure and the test requirement is not met is solved, the transfer and transportation of transfer equipment is replaced by self gravity energy of the semiconductor devices ingeniously, and the cost problem brought by arranging the transfer equipment is saved.
In addition, the invention also provides a gravity type normal temperature and high temperature tester, which has normal temperature testing function and high temperature testing function of the semiconductor device and has all the advantages of the high temperature testing structure of the semiconductor device.
Drawings
Fig. 1 is a perspective view of a semiconductor device high temperature test structure provided by the present invention.
Fig. 2 is a perspective view of the heating platform provided by the invention, wherein the heating plate is hidden.
Fig. 3 is a partial enlarged view of the L region in fig. 2.
Fig. 4 is a perspective view of the heating test mechanism with the insulating cover hidden.
Fig. 5 is a perspective view of the stopper rod.
Fig. 6 is a perspective view of the transfer and loading mechanism.
Fig. 7 is a perspective view of a gravity type normal temperature and high temperature tester.
Fig. 8 is a schematic diagram of the transfer and loading mechanism feeding 10 heating tracks from left to right in sequence.
Fig. 9 is a schematic diagram of a heated track cycle feed and discharge.
Description of main reference numerals: 11-inclined bedplate, 12-frame, 2-transfer loading mechanism, 21-transverse guide rail, 22-slide block, 23-loading rail, 24-third stopper, 25-fourth stopper, 26-second traverse driving mechanism, 3-heating platform, 31-supporting plate, 32-heat preservation box, 321-lower heat insulation plate, 322-upper heat insulation plate, 323-heat insulation side plate, 35-temperature protector, 33-heating rail, 34-first traverse driving mechanism, 4-heating testing mechanism, 41-testing rail, 410-mounting groove, 421-testing station, 422-station to be tested, 43-power receiving module, 44-testing driving mechanism, 45-first stopper, 451-pneumatic clamping finger, 452-first stopper, 453-pressure lever 46-second stopper, 461-sliding table cylinder, 462-second stopper, 5-blocking component, 51-blocking rod, 511-blocking shaft head, 512-limiting part, 513-main body part, 514-screw part, 52-spring, 53-pull rod lug, 54-locking nut, 6-deblocking mechanism, 61-pull rod cylinder, 62-draw hook, 71-heat insulation base, 81-vibration disc feeding component, 82-tubular feeding component, 83-reversing feeding mechanism, 84-shifting mechanism, 85-normal temperature testing mechanism, 86-high temperature testing sorting mechanism, 87-blanking mechanism, 88-normal temperature testing abnormality recovery component, 89-high temperature testing abnormality recovery component, 91-normal temperature tester, and, 92-high temperature tester.
Detailed Description
The invention provides a high-temperature test structure of a semiconductor device and a gravity type normal temperature and high temperature tester, which are used for making the purposes, technical schemes and effects of the invention clearer and more definite, and the invention is further described in detail below by referring to the accompanying drawings and examples. It should be understood that the detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1-9, the invention provides a high-temperature test structure for semiconductor devices, which comprises an inclined platen 11, a transfer loading mechanism 2, a heating platform 3 and a heating test mechanism 4, wherein the transfer loading mechanism 2, the heating platform 3 and the heating test mechanism 4 are sequentially arranged on the inclined platen 11 from top to bottom, the heating platform 3 comprises a supporting plate 31 which is arranged on the inclined platen 11 in a sliding manner, a first traversing driving mechanism 34 for driving the supporting plate 31 to move and a heat preservation box 32 arranged on the supporting plate 31, N heating tracks 33 which are arranged in parallel left and right and a first heating component (not visible in the figure) for heating the heating tracks 33 are arranged in the heat preservation box 32, N is an integer greater than 1, the inclination of the heating tracks 33 is the same as that of the inclined platen 11, a blocking component 5 for blocking the downstream conveying of the semiconductor devices is arranged at the output end of each heating track 33, the heating test mechanism 4 comprises a test track 41 which is the same as that of the inclined platen 11, a second heating component (not visible in the figure) for driving the supporting plate 31 to move, a high-temperature performance test mechanism for the semiconductor devices on the test track 41 is arranged in the heat preservation box 32, the heating mechanism is arranged in the heat preservation box 32, the heating track 33 is opposite to the test mechanism is arranged at the output end of the heating mechanism 4, the heating mechanism is opposite to the test track 41, and the blocking component is arranged at the output end of the test mechanism is opposite to the test track 41, and can release the blocking mechanism for the high-performance test mechanism is arranged to the high-temperature test mechanism and can block the semiconductor device by the heating mechanism and can be connected to the test track 41.
During operation, the transfer and feeding mechanism 2 acquires a certain number of normal-temperature semiconductor devices from upstream equipment each time, the transfer and feeding mechanism 2 conveys the semiconductor devices to a preset heating track 33 one by one, and the semiconductor devices automatically slide downwards under the action of gravity due to the inclined arrangement of the heating track 33, but the semiconductor devices are blocked by the material blocking assembly 5, and the semiconductor devices on the heating track 33 are gradually increased until the heating track 33 is full of the semiconductor devices; the first heating assembly continuously supplies heat to the heating track 33, so that the semiconductor device on the heating track 33 is heated, the heat preservation box 32 reduces the internal heat and performs heat exchange outwards, when the semiconductor device is stored on the heating track 33 for a set period of time, the semiconductor device can be understood as the temperature of the semiconductor device reaches a preset high-temperature value, the first traversing driving mechanism 34 drives the heat preservation box 32 on the supporting plate 31 to move transversely, the semiconductor device reaches the heating track 33 with the set temperature, the heating track 33 is in butt joint with the test track 41, then the blocking of the blocking assembly 5 on the heating track 33 is released by the blocking mechanism 6, the semiconductor device on the heating track 33 can be conveyed to the test track 41 in a releasing mode, and the high-temperature test mechanism performs high-temperature performance test on the semiconductor device. In fact, the released semiconductor device can rapidly transit to the test station 421 or the station 422 to be tested of the test track 41 under the action of gravity, the heat lost by the semiconductor device is very small, and the semiconductor device transferred to the test track 41 can be insulated under the help of the second heating component for assisting in supplying heat to the test track 41, so that the heat dissipated by the semiconductor device is compensated, and the semiconductor device is still in a preset temperature range when the semiconductor device is tested at high temperature.
Compared with the prior art, the high-temperature test structure for the semiconductor devices is applied to performance test of a large number of semiconductor devices in a production line, the plurality of heating tracks 33 which are arranged side by side and can transversely move integrally are arranged, the transfer and feeding mechanism 2 conveys the semiconductor devices to the set heating tracks 33 for full heating, if the semiconductor devices on one heating track 33 reach the test temperature, the heating track 33 can move to be in butt joint with the test track 41, the semiconductor devices can slide from the heating track 33 to be transited to the test track 41 without exposure, the transfer path is greatly shortened, the problem that the temperature of the semiconductor devices is reduced due to exposure and the test requirement is not met is solved, the transfer and transportation of transfer equipment is replaced by self gravity energy of the semiconductor devices ingeniously, and the cost problem brought by arranging the transfer equipment is saved.
Since the semiconductor device needs to be heated for a certain period of time to ensure that the temperature of the semiconductor device reaches the preset temperature, in order to enable the transfer and loading mechanism 2 to form a good loading beat and the heating test mechanism 4 to form a good detection beat, the semiconductor device can be stored in the heating track 33 for a long enough time to ensure that the temperature of the semiconductor device reaches the preset temperature, so in this embodiment, a plurality of heating tracks 33 modes are adopted, the heating track 33 is specifically set to 10, the following is a brief description of the semiconductor device high temperature test structure controlling the conveying logic of the semiconductor device, and for convenience of understanding, the 10 heating tracks 33 are sequentially numbered from left to right, for example, the leftmost heating track 33 is a first heating track, and the rightmost heating track 33 is a tenth heating track. Referring to fig. 8, in the initial situation, all the heating tracks 33 in the thermal insulation box 32 are not provided with semiconductor devices, the transfer and loading mechanism 2 firstly feeds the first heating track until the first heating track is full, then continues to feed the second heating track until the second heating track is full, and then pushes the first heating track until the second heating track is full, so that the first heating track is always fed to the ninth heating track. As shown in fig. 9, after the heating track No. nine is full, the heating time of the semiconductor devices on the heating track No. one is sufficient, which means that all the semiconductor devices on the heating track No. one are heated to reach the set temperature, the semiconductor devices on the heating track No. one 33 can be discharged, then the heating track No. one is driven to be in butt joint with the test track 41, the semiconductor devices on the heating track No. one are released to the test track 41 for high-temperature performance test, meanwhile, the transfer and loading mechanism 2 feeds the heating track No. ten, when the heating track No. ten is full and the semiconductor devices on the heating track No. one 33 are emptied, the semiconductor devices on the heating track No. two are reached to the heating time, the semiconductor devices on the heating track No. two can be discharged, then the heating track No. two is switched to be in butt joint with the test track 41, and the semiconductor devices on the heating track No. two are released to the test track 41 for high-temperature performance test; and so on, feeding and discharging are continued, and it can be understood that after the heating track No. nine is full, the semiconductor device on the heating track No. one reaches the heating time, the semiconductor device on the heating track No. one can be discharged, then the heating track No. one is switched to be in butt joint with the test track 41, the semiconductor device on the heating track No. one is released to the test track 41 for high-temperature performance test, and meanwhile, the loading mechanism 2 is transferred to the heating track No. ten, so that a heating flow of circulating feeding and discharging is formed, the loading mechanism 2 and the heating test mechanism 4 are ensured to work without interruption, and the maximum detection efficiency is maintained.
The first traverse driving mechanism 34 may specifically be a screw driving mechanism or a synchronous belt driving mechanism, and can accurately drive the heat preservation box 32 and the heating track 33 on the pallet 31 to move laterally.
Specifically, referring to fig. 3 and 5, the material blocking assembly 5 includes a material blocking rod 51, a spring 52, a pull rod protrusion 53, an elastic washer and a locking nut 54, wherein the material blocking rod 51 includes a material blocking shaft head 511, a limiting portion 512, a main body portion 513 and a threaded portion 514 sequentially connected from top to bottom; the output end of the heating track 33 is provided with a shaft hole for the stop shaft head 511 to penetrate, the diameter of the limiting part 512 is larger than the diameters of the stop shaft head 511 and the main part 513, the main part 513 is sleeved with the spring 52, the pull rod lug 53 is sleeved on the threaded part 514 and matched with the locking nut 54 through an elastic washer, the pull rod lug 53 is fixed at the tail end of the main part 513, and the main part 513 penetrates through the heat preservation box 32.
As shown in fig. 2 and 3, in a natural state, one end of the spring 52 is pressed against the upper surface of the lower heat insulation plate 321 of the heat insulation box 32, and the other end of the spring 52 is pressed against the limiting part 512, so that the elastic potential energy of the spring 52 is converted into the kinetic energy of the material blocking shaft head 511 of the material blocking rod 51 extending out of the heating track 33, and the material blocking shaft head 511 of the material blocking rod 51 blocks the semiconductor device on the heating track 33. When the release mechanism 6 pulls the pull rod protrusion 53 on the stop rod 51 downwards, the stop shaft head 511 of the stop rod 51 retracts into the heating track 33, so that the semiconductor device on the heating track 33 can be released, meanwhile, the limiting part 512 of the stop rod 51 presses the spring 52, when the release mechanism 6 releases the pull rod protrusion 53, the spring 52 deforms and returns to restore, and the stop shaft head 511 of the stop rod 51 is driven again to extend out of the heating track 33 to form a stop. By this arrangement, the stopper assembly 5 has an automatically restoring blocking capability, and the stopper shaft head 511 of the stopper rod 51 can retract the heating rail 33 by pulling down the pull rod boss 53 by the releasing mechanism 6, thereby releasing the semiconductor device, thereby realizing a quick and reliable releasing operation.
Further, as shown in fig. 3, the gear releasing mechanism 6 includes a pull rod cylinder 61 and a draw hook 62 connected to an output end of the pull rod cylinder 61, where the pull rod cylinder 61 is used to drive the gear rod 51 to move downward through the draw hook 62, so that the gear shaft head 511 of the gear rod 51 retracts into the heating track 33. The draw hook 62 is provided with two hooks, the unlocking mechanism 6 is in a non-working state, the pull rod convex blocks 53 on each material blocking assembly 5 can transversely move through the draw hook 62, namely, the pull rod convex blocks 53 do not interfere with each other to pass through between the two hooks, when the pull rod convex blocks 53 are positioned in the hooks of the draw hook 62 (namely, between the two hooks), the pull rod cylinder 61 drives the draw hook 62 to move downwards, the two hooks can simultaneously press down the tops of the pull rod convex blocks 53, the material blocking rod 51 can be pulled rapidly to be unblocked, and the semiconductor device can be rapidly transferred into the test track 41 by virtue of the action of gravity once unblocked. It will be appreciated that only the heating track 33 that successfully interfaces with the test track 41 will have a need to pass semiconductor devices, i.e., that other heating tracks 33 that do not interface with the test track 41 will not have a need to pass semiconductor devices. Therefore, only one releasing mechanism 6 is needed to meet the release requirement of any heating track 33, and compared with the independent release control structure configured by each material blocking component 5, the releasing mechanism 6 and the material blocking component 5 provided by the embodiment are compact and exquisite in structure and lower in manufacturing cost.
As shown in fig. 4, the test track 41 is provided with a test station 421, the high temperature test mechanism includes a control module, power receiving modules 43 located at two sides of the test station 421, a test driving mechanism 44, a first stopper 45 disposed at an upstream side of the power receiving modules 43, and a second stopper 46 disposed at a downstream side of the power receiving modules 43, the first stopper 45 is used for stopping and releasing a set number of semiconductor devices to be transferred to the test station 421, and the second stopper 46 is used for limiting the semiconductor devices of the test track 41 at the test station 421 or releasing the semiconductor devices to be transferred in a downstream direction; the test driving mechanism 44 is used for driving the two power-on modules 43 to move or reset to one side of the semiconductor device respectively, so that a plurality of power-on terminals on the power-on modules 43 are respectively in butt joint with pins of each semiconductor device one by one so as to perform high-temperature power-on test on the semiconductor device; the control module is used for respectively identifying the group where the semiconductor device with the detection abnormality exists in the high Wen Tongdian test and the group where all the qualified semiconductor devices exist.
In one embodiment, the test driving mechanism 44 is provided with one power receiving module 43 corresponding to each side, the test driving mechanism 44 includes a test driving push rod and a sliding rail assembly, the test driving push rod is preferably an electric push rod or a pneumatic push rod, the power receiving module 43 is slidably disposed on the chassis through the sliding rail assembly, the test driving push rod is in transmission connection with the power receiving module 43, and the power receiving module 43 is driven by the test driving push rod to approach to one side of the test conveying track and perform high-voltage test or relatively reset; by such arrangement, the test driving mechanism 44 is simple in structure, and the driving power receiving module 43 is stable in moving effect and smooth.
In this embodiment, the first stopper 45 includes a pneumatic clamping finger 451, a pressing rod 453 disposed on one of the pneumatic clamping finger 451, and a first stopper 452 disposed on the other of the pneumatic clamping finger 451, the pressing rod 453 being located upstream of the first stopper 452; when the fingers of the pneumatic clamping finger 451 are opened, the pressure bar 453 releases the semiconductor devices, and the first stop 452 blocks the semiconductor devices from sliding downwards, so that the station 422 to be tested is loaded with a set number of semiconductor devices; when the fingers of the pneumatic clamping finger 451 contract, the pressing rod 453 blocks the semiconductor devices from sliding downwards, the first stop block 452 releases the semiconductor devices in the station 422 to be tested, so that the set number of semiconductor devices slide to the test station 421 together, and the test driving mechanism 44 drives the two power-on modules 43 to be electrically connected with the semiconductor devices in the test station 421, so that the high Wen Tongdian test is realized. The first stopper 45 skillfully uses the reverse movement characteristics of the two fingers of the pneumatic clamping finger 451 to achieve the effect that one driving source drives the pressing rod 453 and the first stop block 452 to move at the same time, thereby saving manufacturing cost and simplifying the whole structure.
Preferably, the second stopper 46 includes a slide cylinder 461 and a second stopper 462 provided on the slide of the slide cylinder 461. The piston rod of the sliding table cylinder 461 is contracted, so that a second stop block 462 on the sliding table is driven to be pressed against the test track 41, and the blocking of the semiconductor device is realized; the piston rod of the sliding table cylinder 461 extends out to drive the second stop 462 on the sliding table to leave the test track 41, so that the semiconductor device is released.
Specifically, as shown in fig. 6, the transferring and feeding mechanism 2 includes a transverse rail 21 extending transversely and disposed on the inclined platen 11, a slider 22 slidably connected with the transverse rail 21, a feeding rail 23 disposed on the slider 22, a third stopper 24 and a fourth stopper 25 disposed on the feeding rail 23, and a second traversing driving mechanism 26 for driving the slider 22 to move, wherein the fourth stopper 25 is disposed downstream of the third stopper 24, and the third stopper 24 and the fourth stopper 25 are mutually matched to release the semiconductor devices one by one onto the corresponding heating rail 33. When the second traverse driving mechanism 26 drives, the feeding rail 23 moves left and right along the traverse guide 21, so that the feeding rail 23 selectively butts against the heating rail 33 with a set number for feeding according to the conveying logic of the semiconductor device high-temperature test structure.
The second traverse driving mechanism 26 may be a synchronous belt driving mechanism, where a synchronous belt is fixedly connected with the slider 22, and the synchronous belt pulls the feeding rail 23 to move laterally. Of course, a screw drive mechanism is also possible.
Specifically, the heat insulation box 32 includes a lower heat insulation plate 321, an upper heat insulation plate 322 for covering the heating track 33, and heat insulation side plates 323 disposed on two sides of the lower heat insulation plate 321 and the upper heat insulation plate 322, and the first heating assembly includes a heating plate (not visible in the figure) thermally connected to the bottom surface of the heating track 33 and a plurality of first heating rods disposed on the heating plate, and the heating plate is prevented from being overheated by the temperature protector 35. The first heating rods fully supply heat to each part of the heating plate, the upper surface of the heating plate is clung to the bottom surface of the heating track 33, heat is uniformly transferred to each heating track 33, and each part of the heating track 33 is fully warmed and heated, so that the semiconductor devices on the heating track 33 can reach the preset test temperature. The thermal insulation box 32 has an external surrounding effect on the heating plate and the heating track 33, so that the outward dissipation of heat in the thermal insulation box 32 is greatly reduced, the heating speed of the semiconductor device is increased, and the thermal insulation performance after the temperature reaches the test temperature is improved.
Preferably, in order to prevent the worker from mistakenly touching the thermal insulation box 32 to cause scalding, a protective door can be additionally arranged on the periphery of the heating platform 3, so that the safety of equipment is improved.
Preferably, the test rail 41 is disposed on the heat insulation base 71, and the second heating assembly includes a second heating rod extending along the length direction of the test rail 41 and thermally connected to the test rail 41, specifically, a mounting groove 410 for mounting the second heating rod is disposed on the bottom surface of the test rail 41, and the second heating rod fully heats the entire test rail 41, so as to compensate for heat loss of the semiconductor device during the conveying process or the testing process. Similarly, the test rail 41 is provided with a heat insulating cover plate (not visible in the figure), and the heat insulating cover plate and the heat insulating base 71 play a role of heat insulating and surrounding the heating rail 33, so that the semiconductor devices on the test rail 41 can be always maintained at a set test temperature.
As shown in fig. 7, the invention further provides a gravity type normal temperature and high temperature testing machine, which comprises a reversing feeding mechanism 83, a material moving mechanism 84, two groups of normal temperature testing mechanisms 85 which are arranged side by side left and right, a high temperature testing mechanism for semiconductor devices, a high temperature testing and sorting mechanism 86 and a blanking mechanism 87 which are sequentially arranged on the inclined table plate 11 from top to bottom; the ramp 11 is disposed on a frame 12. The frame 12 is provided with a normal temperature tester 91 and a high temperature tester 92, the normal temperature tester 91 is electrically connected with the normal temperature testing mechanism 85, and the high temperature tester 92 is electrically connected with the high temperature testing mechanism.
A normal temperature test abnormality recovery assembly 88 is arranged beside the heating platform 3, and a high temperature test abnormality recovery assembly 89 is arranged beside the blanking mechanism 87; the reversing feeding mechanism 83 is provided with two feeding tracks, one feeding track is connected with the vibration disc feeding assembly 81, the other feeding track is connected with the tubular feeding assembly 82, and the semiconductor devices of different types can be flexibly fed in a proper feeding mode; since the normal temperature tester can only test one semiconductor device at a time, in order to further improve the test efficiency, it can be understood that when one normal temperature test mechanism 85 is in a test state, the other normal temperature test mechanism 85 is in a ready state, and once the normal temperature test mechanism 85 completes the test, the test is switched to the other normal temperature test mechanism 85 to start the test immediately. The material transferring mechanism 84 is used for transferring the semiconductor devices on the feeding track to the corresponding normal temperature testing mechanism 85, and the material transferring and feeding mechanism 2 is used for transferring the semiconductor devices qualified in normal temperature test to the heating platform 3 and transferring the semiconductor devices abnormal in normal temperature test to the normal temperature test abnormal recovery assembly 88; the high temperature test sorting mechanism 86 is used for transferring the semiconductor device qualified in the high temperature test to the blanking mechanism 87 and transferring the semiconductor device abnormal in the high temperature test to the high temperature test abnormal recovery assembly 89, the semiconductor device is slidingly conveyed from top to bottom, the semiconductor device is subjected to normal temperature performance test and then to high temperature performance test, and after the test is completed, the semiconductor device of the qualified semiconductor is subjected to blanking tubing again.
Those skilled in the art can specifically refer to the prior art to set the reversing feeding mechanism 83, the vibration plate feeding assembly 81, the tubular feeding assembly 82, the normal temperature testing mechanism 85, the high temperature testing and sorting mechanism 86 and the discharging mechanism 87, and the specific structure will not be expanded here.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
It will be understood that equivalents and modifications will occur to those skilled in the art based on the present invention and its spirit, and all such modifications and substitutions are intended to be included within the scope of the present invention.
Claims (10)
1. The semiconductor device high-temperature test structure is characterized by comprising an inclined platen, a transfer loading mechanism, a heating platform and a heating test mechanism, wherein the transfer loading mechanism, the heating platform and the heating test mechanism are sequentially arranged on the inclined platen from top to bottom, the heating platform comprises a supporting plate, a first transverse driving mechanism and a heat preservation box, the supporting plate is arranged on the inclined platen in a sliding manner, the first transverse driving mechanism is used for driving the supporting plate to move, the heat preservation box is internally provided with N heating tracks which are arranged side by side and a first heating assembly used for heating the heating tracks, N is an integer larger than 1, the inclination of the heating tracks is the same as that of the inclined platen, the output end of each heating track is provided with a blocking assembly used for blocking the semiconductor device to be conveyed downstream, the heating test mechanism comprises a test track with the same inclination of the inclined platen, a second heating assembly used for heating the test track, and a high-temperature test mechanism used for conducting high-temperature test on the semiconductor device on the test track, and the blocking mechanism is arranged on the upper stream of the heating test mechanism and used for blocking the blocking mechanism to release the blocking of the material assembly which is used for blocking the heating the input end of the test track, so that the semiconductor device on the heating track can be conveyed to the test device on the heating track.
2. The semiconductor device high-temperature test structure according to claim 1, wherein the material blocking assembly comprises a material blocking rod, a spring, a pull rod lug, an elastic washer and a locking nut, and the material blocking rod comprises a material blocking shaft head, a limiting part, a main body part and a threaded part which are sequentially connected from top to bottom; the heating track's output is offered and is supplied keep off the shaft hole that the material spindle nose runs through, the diameter of spacing portion is all greater than the diameter that keeps off material spindle nose and main part, the main part cover has the spring, the elastic potential energy of spring turns into the fender material spindle nose that keeps off the material pole and stretches out heating track's kinetic energy, the pull rod lug cover is on screw thread portion and cooperates with lock nut through elastic washer, fixes the terminal at the main part with the pull rod lug, the main part runs through the heat preservation box.
3. The semiconductor device high-temperature test structure according to claim 2, wherein the gear releasing mechanism comprises a pull rod cylinder and a draw hook connected with the output end of the pull rod cylinder, the pull rod convex blocks on each gear component can transversely move along the way draw hook in the non-working state of the gear releasing mechanism, and the pull rod cylinder is used for driving the gear rod to move downwards through the draw hook so that the gear shaft heads of the gear rod retract into the heating track.
4. The high-temperature test structure of the semiconductor device according to claim 1, wherein the test track is provided with a test station, the high-temperature test mechanism comprises a control module, power-on modules positioned at two sides of the test station, a test driving mechanism, a first stopper arranged at the upstream of the power-on modules, and a second stopper arranged at the downstream of the power-on modules, wherein the first stopper is used for stopping and releasing a set number of semiconductor devices to be conveyed to the test station, and the second stopper is used for limiting the semiconductor devices of the test track at the test station or releasing the semiconductor devices to be conveyed along the downstream direction; the test driving mechanism is used for driving the two power connection modules to move or reset to one side of the semiconductor device respectively, so that a plurality of power connection terminals on the power connection modules are respectively in butt joint with pins of each semiconductor device one by one so as to carry out high-temperature power-on test on the semiconductor device; the control module is used for respectively identifying the group where the semiconductor device with the detection abnormality exists in the high Wen Tongdian test and the group where all the qualified semiconductor devices exist.
5. The semiconductor device high temperature test structure of claim 4, wherein the first stopper comprises a pneumatic gripping finger, a compression bar disposed on one of the pneumatic gripping fingers, and a first stop disposed on the other of the pneumatic gripping fingers, the compression bar being upstream of the first stop; when fingers of the pneumatic clamping fingers are opened, the compression bar releases the semiconductor device, and the first stop block stops the semiconductor device from sliding downwards; when the fingers of the pneumatic clamping fingers are contracted, the compression bar blocks the semiconductor device from sliding downwards, and the first stop block releases the semiconductor device; the second stopper comprises a sliding table cylinder and a second stop block arranged on a sliding table of the sliding table cylinder.
6. The semiconductor device high-temperature test structure according to claim 1, wherein the transfer and loading mechanism comprises a transverse guide rail transversely extending to be arranged on the inclined platen, a sliding block in sliding connection with the transverse guide rail, a loading rail arranged on the sliding block, a third stopper and a fourth stopper arranged on the loading rail, and a second transverse movement driving mechanism for driving the sliding block to move, the fourth stopper is positioned at the downstream of the third stopper, and the third stopper and the fourth stopper are mutually matched to release the semiconductor devices one by one to the corresponding heating rails.
7. The semiconductor device high temperature test structure according to claim 1, wherein the heat-retaining box comprises a lower heat-retaining plate, an upper heat-retaining plate for covering the heating track, and heat-retaining side plates disposed on both sides of the lower heat-retaining plate and the upper heat-retaining plate, the first heating assembly comprises a heating plate thermally connected to the bottom surface of the heating track and a plurality of first heating bars disposed on the heating plate, and the heating plate is prevented from being overheated by a temperature protector.
8. The semiconductor device high temperature test structure of claim 1, wherein the test track is disposed on the heat insulation base, the second heating assembly comprises a second heating rod extending along a length direction of the test track and thermally connected to the test track, and the test track is provided with a heat insulation cover plate.
9. The semiconductor device high temperature test structure according to claim 1, wherein the heating track is provided with 10 strips.
10. The gravity type normal temperature and high temperature testing machine is characterized by comprising a reversing feeding mechanism, a material moving mechanism, two groups of normal temperature testing mechanisms, a high temperature testing structure of a semiconductor device, a high temperature testing and sorting mechanism and a blanking mechanism, wherein the reversing feeding mechanism, the material moving mechanism, the two groups of normal temperature testing mechanisms, the high temperature testing structure, the high temperature testing and sorting mechanism and the blanking mechanism are sequentially arranged on an inclined bedplate from top to bottom; a normal temperature test abnormality recovery assembly is arranged beside the heating platform, and a high temperature test abnormality recovery assembly is arranged beside the blanking mechanism; the reversing feeding mechanism is provided with two feeding tracks, one feeding track is connected with the vibration disc feeding assembly, and the other feeding track is connected with the tubular feeding assembly; the transfer and loading mechanism is used for transferring the semiconductor devices on the feeding track to the corresponding normal temperature testing mechanism, and is used for transferring the semiconductor devices which are qualified in normal temperature testing to the heating platform and transferring the semiconductor devices which are abnormal in normal temperature testing to the normal temperature testing abnormal recovery assembly; the high-temperature test sorting mechanism is used for transferring the semiconductor devices which are qualified in high-temperature test to the blanking mechanism and transferring the semiconductor devices which are abnormal in high-temperature test to the high-temperature test abnormal recovery assembly, and the inclined table plate is arranged on the rack.
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| CN202311564283.8A CN117347814B (en) | 2023-11-22 | 2023-11-22 | High-temperature test structure of semiconductor device and gravity type normal temperature and high temperature tester |
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| CN117347814B (en) | 2024-04-02 |
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