CN117198935A - 具有气体分布及单独泵送的批量固化腔室 - Google Patents
具有气体分布及单独泵送的批量固化腔室 Download PDFInfo
- Publication number
- CN117198935A CN117198935A CN202311176344.3A CN202311176344A CN117198935A CN 117198935 A CN117198935 A CN 117198935A CN 202311176344 A CN202311176344 A CN 202311176344A CN 117198935 A CN117198935 A CN 117198935A
- Authority
- CN
- China
- Prior art keywords
- exhaust
- processing chamber
- batch processing
- showerhead
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H10P14/6342—
-
- H10P72/0441—
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- H10P72/0462—
-
- H10P72/3302—
-
- H10P72/3411—
-
- H10P72/7612—
-
- H10P72/7624—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Formation Of Insulating Films (AREA)
- Polyurethanes Or Polyureas (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461996817P | 2014-05-14 | 2014-05-14 | |
| US61/996,817 | 2014-05-14 | ||
| US14/577,828 US10113236B2 (en) | 2014-05-14 | 2014-12-19 | Batch curing chamber with gas distribution and individual pumping |
| US14/577,828 | 2014-12-19 | ||
| PCT/US2015/026937 WO2015175175A1 (en) | 2014-05-14 | 2015-04-21 | Batch curing chamber with gas distribution and individual pumping |
| CN201580025098.9A CN106463362B (zh) | 2014-05-14 | 2015-04-21 | 具有气体分布及单独泵送的批量固化腔室 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580025098.9A Division CN106463362B (zh) | 2014-05-14 | 2015-04-21 | 具有气体分布及单独泵送的批量固化腔室 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117198935A true CN117198935A (zh) | 2023-12-08 |
Family
ID=54480423
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311176344.3A Pending CN117198935A (zh) | 2014-05-14 | 2015-04-21 | 具有气体分布及单独泵送的批量固化腔室 |
| CN201580025098.9A Active CN106463362B (zh) | 2014-05-14 | 2015-04-21 | 具有气体分布及单独泵送的批量固化腔室 |
| CN201911127078.9A Active CN110828346B (zh) | 2014-05-14 | 2015-04-21 | 具有气体分布及单独泵送的批量固化腔室 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580025098.9A Active CN106463362B (zh) | 2014-05-14 | 2015-04-21 | 具有气体分布及单独泵送的批量固化腔室 |
| CN201911127078.9A Active CN110828346B (zh) | 2014-05-14 | 2015-04-21 | 具有气体分布及单独泵送的批量固化腔室 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US10113236B2 (enExample) |
| JP (2) | JP6592012B2 (enExample) |
| KR (3) | KR102588544B1 (enExample) |
| CN (3) | CN117198935A (enExample) |
| WO (1) | WO2015175175A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9226407B2 (en) * | 2002-07-01 | 2015-12-29 | Semigear Inc | Reflow treating unit and substrate treating apparatus |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US11482434B2 (en) | 2016-10-18 | 2022-10-25 | Belting E-Town Semiconductor Technology Co., Ltd | Systems and methods for workpiece processing |
| US10840068B2 (en) * | 2017-02-15 | 2020-11-17 | Yield Engineering Systems, Inc. | Plasma spreading apparatus and method of spreading plasma in process ovens |
| JP6950737B2 (ja) * | 2017-04-17 | 2021-10-13 | 東京エレクトロン株式会社 | 絶縁膜の成膜方法、絶縁膜の成膜装置及び基板処理システム |
| KR102576563B1 (ko) * | 2017-05-13 | 2023-09-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고품질 갭 충전 솔루션들을 위한 순환식 유동성 증착 및 고-밀도 플라즈마 처리 프로세스들 |
| JP6947914B2 (ja) * | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高圧高温下のアニールチャンバ |
| US10872762B2 (en) * | 2017-11-08 | 2020-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming silicon oxide layer and semiconductor structure |
| US11101163B2 (en) * | 2018-01-30 | 2021-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for automated robotic arm sensing |
| US10734219B2 (en) * | 2018-09-26 | 2020-08-04 | Asm Ip Holdings B.V. | Plasma film forming method |
| US20210013069A1 (en) * | 2019-07-12 | 2021-01-14 | Applied Materials, Inc. | Multi-lid structure for semiconductor processing system |
| JP7333762B2 (ja) * | 2020-02-05 | 2023-08-25 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US11901222B2 (en) * | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| JP7156332B2 (ja) * | 2020-05-21 | 2022-10-19 | 株式会社安川電機 | 搬送装置、搬送方法および搬送システム |
| KR102749186B1 (ko) * | 2020-07-15 | 2025-01-06 | 세메스 주식회사 | 기판 처리 장치 |
| JP7747470B2 (ja) * | 2021-09-06 | 2025-10-01 | キヤノントッキ株式会社 | 成膜装置、基板搬送装置、基板搬送方法及び電子デバイスの製造方法 |
| KR20230045459A (ko) | 2021-09-28 | 2023-04-04 | 삼성전자주식회사 | 로드락 장치 및 이를 포함하는 기판 처리 장치 |
| US12518979B2 (en) * | 2022-07-19 | 2026-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Exhaust manifold for semiconductor process chamber |
| US20240112931A1 (en) * | 2022-10-03 | 2024-04-04 | Applied Materials, Inc. | Cassette structures and related methods for batch processing in epitaxial deposition operations |
| US20240120220A1 (en) * | 2022-10-06 | 2024-04-11 | Applied Materials, Inc. | Load lock chambers and related methods and structures for batch cooling or heating |
| TW202512812A (zh) * | 2023-09-07 | 2025-03-16 | 聯華電子股份有限公司 | 矽穿孔結構及其製作方法 |
| US12497693B2 (en) * | 2024-03-27 | 2025-12-16 | Applied Materials, Inc. | Modular flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing |
| CN120291061B (zh) * | 2025-06-09 | 2025-08-26 | 蓝河科技(绍兴)有限公司 | 气体分配装置和半导体设备 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4264393A (en) * | 1977-10-31 | 1981-04-28 | Motorola, Inc. | Reactor apparatus for plasma etching or deposition |
| US6296735B1 (en) * | 1993-05-03 | 2001-10-02 | Unaxis Balzers Aktiengesellschaft | Plasma treatment apparatus and method for operation same |
| CH687987A5 (de) * | 1993-05-03 | 1997-04-15 | Balzers Hochvakuum | Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer. |
| JPH07297194A (ja) * | 1994-04-25 | 1995-11-10 | Sony Corp | マルチチャンバー装置及び半導体装置の製造方法 |
| JP3421483B2 (ja) * | 1995-08-25 | 2003-06-30 | 株式会社東芝 | 半導体装置の製造方法 |
| US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
| US6610150B1 (en) | 1999-04-02 | 2003-08-26 | Asml Us, Inc. | Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system |
| JP5021112B2 (ja) * | 2000-08-11 | 2012-09-05 | キヤノンアネルバ株式会社 | 真空処理装置 |
| US7256370B2 (en) * | 2002-03-15 | 2007-08-14 | Steed Technology, Inc. | Vacuum thermal annealer |
| KR100491161B1 (ko) * | 2002-11-26 | 2005-05-24 | 주식회사 테라세미콘 | 반도체 제조장치 |
| KR101276694B1 (ko) * | 2003-02-14 | 2013-06-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 수소-함유 라디칼을 이용한 자연 산화물 세정 |
| JP4319434B2 (ja) * | 2003-03-11 | 2009-08-26 | 東京エレクトロン株式会社 | ゲートバルブ及び真空容器 |
| EP1824960A2 (en) | 2004-11-22 | 2007-08-29 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
| US20070084408A1 (en) | 2005-10-13 | 2007-04-19 | Applied Materials, Inc. | Batch processing chamber with diffuser plate and injector assembly |
| US20070209593A1 (en) * | 2006-03-07 | 2007-09-13 | Ravinder Aggarwal | Semiconductor wafer cooling device |
| WO2008004278A1 (fr) * | 2006-07-04 | 2008-01-10 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Procédé et dispositif de concentration / dilution de gaz spécifique |
| US20090016853A1 (en) * | 2007-07-09 | 2009-01-15 | Woo Sik Yoo | In-line wafer robotic processing system |
| JP2010047818A (ja) * | 2008-08-25 | 2010-03-04 | Toshiba Corp | 半導体製造装置および半導体製造方法 |
| KR101458195B1 (ko) | 2009-09-25 | 2014-11-05 | 주식회사 티지오테크 | 배치식 에피택셜층 형성장치 및 그 형성방법 |
| US8524004B2 (en) | 2010-06-16 | 2013-09-03 | Applied Materials, Inc. | Loadlock batch ozone cure |
| KR101223489B1 (ko) * | 2010-06-30 | 2013-01-17 | 삼성디스플레이 주식회사 | 기판 가공 장치 |
| US9285168B2 (en) * | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
| WO2012099064A1 (ja) * | 2011-01-18 | 2012-07-26 | 株式会社日立国際電気 | 基板処理装置、基板支持具及び半導体装置の製造方法 |
| CN103493185A (zh) * | 2011-04-08 | 2014-01-01 | 应用材料公司 | 用于uv处理、化学处理及沉积的设备与方法 |
| KR20140070590A (ko) * | 2011-10-11 | 2014-06-10 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치, 기판 처리 방법, 반도체 장치의 제조 방법 및 기록 매체 |
| WO2013173999A1 (en) * | 2012-05-24 | 2013-11-28 | Acm Research (Shanghai) Inc. | Loadlock chamber and method for treating substrates using the same |
| JP5977274B2 (ja) * | 2013-03-21 | 2016-08-24 | 東京エレクトロン株式会社 | バッチ式縦型基板処理装置および基板保持具 |
| US20150044619A1 (en) * | 2013-08-07 | 2015-02-12 | International Business Machines Corporation | Carrier for Ultra-Thin Substrates and Method of Use |
-
2014
- 2014-12-19 US US14/577,828 patent/US10113236B2/en active Active
-
2015
- 2015-04-21 KR KR1020237004775A patent/KR102588544B1/ko active Active
- 2015-04-21 KR KR1020227019130A patent/KR102500194B1/ko active Active
- 2015-04-21 CN CN202311176344.3A patent/CN117198935A/zh active Pending
- 2015-04-21 KR KR1020167034905A patent/KR102407734B1/ko active Active
- 2015-04-21 CN CN201580025098.9A patent/CN106463362B/zh active Active
- 2015-04-21 CN CN201911127078.9A patent/CN110828346B/zh active Active
- 2015-04-21 WO PCT/US2015/026937 patent/WO2015175175A1/en not_active Ceased
- 2015-04-21 JP JP2016567489A patent/JP6592012B2/ja active Active
-
2018
- 2018-10-18 US US16/164,392 patent/US11408075B2/en active Active
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2019
- 2019-09-19 JP JP2019169941A patent/JP6928043B2/ja active Active
-
2022
- 2022-07-11 US US17/861,750 patent/US12203171B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017522718A (ja) | 2017-08-10 |
| US10113236B2 (en) | 2018-10-30 |
| KR102588544B1 (ko) | 2023-10-11 |
| KR20220104184A (ko) | 2022-07-26 |
| US20220341042A1 (en) | 2022-10-27 |
| KR102407734B1 (ko) | 2022-06-10 |
| KR20170007411A (ko) | 2017-01-18 |
| WO2015175175A1 (en) | 2015-11-19 |
| US12203171B2 (en) | 2025-01-21 |
| JP6592012B2 (ja) | 2019-10-16 |
| US20190048470A1 (en) | 2019-02-14 |
| KR20230025035A (ko) | 2023-02-21 |
| JP2020036015A (ja) | 2020-03-05 |
| KR102500194B1 (ko) | 2023-02-14 |
| CN110828346A (zh) | 2020-02-21 |
| CN110828346B (zh) | 2023-10-03 |
| JP6928043B2 (ja) | 2021-09-01 |
| US11408075B2 (en) | 2022-08-09 |
| US20150329970A1 (en) | 2015-11-19 |
| CN106463362A (zh) | 2017-02-22 |
| CN106463362B (zh) | 2019-11-26 |
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