WO2013173999A1 - Loadlock chamber and method for treating substrates using the same - Google Patents

Loadlock chamber and method for treating substrates using the same Download PDF

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Publication number
WO2013173999A1
WO2013173999A1 PCT/CN2012/075992 CN2012075992W WO2013173999A1 WO 2013173999 A1 WO2013173999 A1 WO 2013173999A1 CN 2012075992 W CN2012075992 W CN 2012075992W WO 2013173999 A1 WO2013173999 A1 WO 2013173999A1
Authority
WO
WIPO (PCT)
Prior art keywords
chamber
loadlock chamber
chuck
support frame
substrates
Prior art date
Application number
PCT/CN2012/075992
Other languages
French (fr)
Inventor
Jian Wang
Zenghua HE
Zhiyou FANG
Zhaowei Jia
Hui Wang
Original Assignee
Acm Research (Shanghai) Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acm Research (Shanghai) Inc. filed Critical Acm Research (Shanghai) Inc.
Priority to KR1020147033317A priority Critical patent/KR101940580B1/en
Priority to PCT/CN2012/075992 priority patent/WO2013173999A1/en
Publication of WO2013173999A1 publication Critical patent/WO2013173999A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber

Definitions

  • the present invention generally relates to a semiconductor device fabrication apparatus, and more particularly relates to a loadlock chamber and a method for treating semiconductor substrates using the same.
  • a loadlock chamber is employed and disposed between a transfer chamber and the exterior space for treating semiconductor substrates before or after the semiconductor substrates are processed.
  • the loadlock chamber is used for heating or cooling the semiconductor substrates.
  • the loadlock chamber includes a stack of four chambers divided into two loading chambers for unprocessed large substrates being placed in and two unloading chambers for processed large substrates being placed in.
  • Each of the loading chambers and the unloading chambers includes a first inlet/outlet port, a second inlet/outlet port and an inner stage on which a large substrate is placed.
  • Pre-heaters are disposed at the stages of the loading chambers to heat the unprocessed large substrate.
  • Coolers are disposed at the stages of the unloading chambers to cool the processed large substrate.
  • the unprocessed large substrates are loaded into the loading chambers or the processed large substrates are unloaded from the unloading chambers by an atmospheric transfer robot.
  • the atmospheric transfer robot carries the unprocessed large substrates into the loading chambers or the processed large substrates out of the unloading chambers, both the loading chambers and the unloading chambers are kept in an atmospheric state.
  • a transfer robot disposed in a transfer chamber connecting to the loading chambers and the unloading chambers respectively loads or unloads the large substrates
  • the loading chambers and the unloading chambers are kept in a vacuum state like the state of the transfer chamber.
  • nitrogen gas is introduced into the loading chambers to make the pressure state of the loading chambers to be the same as the atmospheric state, and then the inlet ports are opened and the atmospheric transfer robot loads the unprocessed large substrates into the loading chambers. Then the inlet ports are closed, and the loading chambers are vacuumized and the unprocessed large substrates are heated.
  • the cooling process is similar to the heating process, which is not described in detail herein.
  • an object of the present invention is to provide a loadlock chamber capable of treating multiple substrates.
  • the loadlock chamber includes a chamber housing, a chuck, a support frame and at least one elevating mechanism.
  • the chamber housing has a first vacuum valve and a second vacuum valve, via which the substrates are loaded in the chamber housing or unloaded out of the chamber housing.
  • the chuck has a plate portion for holding the substrates. The plate portion is received in the chamber housing and defines at least two notches.
  • the support frame is received in the chamber housing and has at least two connecting portions. A stack of support platforms protrudes from either of the connecting portions. Every support platform has a placing portion arranged in the notch of the chuck. The placing portions which are in the same plane are parallel with the plate portion of the chuck and capable of holding a piece of the substrates.
  • the elevating mechanism is used for raising or lowering the connecting portions of the support frame.
  • an object of the present invention is to provide a method for treating multiple substrates using the loadlock chamber, comprising steps of: a) introducing inert gas into the loadlock chamber to regulate the pressure of the loadlock chamber to atmosphere pressure; b) opening the first vacuum valve and loading the multiple substrates on the placing portions; c) closing the first vacuum valve and vacuumizing the loadlock chamber to keep the loadlock chamber in a vacuum state; d) lowering the support frame and the substrate on the lowest placing portions being lowered above the plate portion and having a certain interval with the plate portion to be treated or being lowered on the plate portion to be treated; e) raising the support frame and the treated substrate being held on the lowest placing portions; f) opening the second vacuum valve and unloading the treated substrate from the loadlock chamber; g) repeating the above steps d) ⁇ f) until all of the substrates are treated and unloaded from the loadlock chamber one by one.
  • an object of the present invention is to provide another method for treating multiple substrates using the loadlock chamber, comprising steps of: a) vacuumizing the loadlock chamber and keeping the loadlock chamber in a vacuum state; b) opening the second vacuum valve and loading a piece of substrate on the top placing portions; c) lowering the support frame and the substrate being lowered on the plate portion to be treated; d) raising the support frame and the treated substrate being on the top placing portions; e) repeating the above steps b) ⁇ d) until all the placing portions hold the substrates; f) closing the second vacuum valve and introducing inert gas into the loadlock chamber to regulate the pressure of the loadlock chamber to atmosphere pressure; g) opening the first vacuum valve and unloading all of the substrates out of the loadlock chamber.
  • the loadlock chamber is capable of treating multiple substrates, and meanwhile the loadlock chamber just needs once a time of inert gas introduction and once a time of vacuumization, which greatly improves the work efficiency of the loadlock chamber.
  • FIG. 1 is a sectional view of a loadlock chamber according to the present invention.
  • FIG. 2 is a perspective view showing a chuck assembling with a support frame of the loadlock chamber of the present invention
  • FIG. 3 is a perspective view of a support platform of the support frame
  • FIG. 4 is a perspective view of the chuck;
  • FIG. 5 is a sectional view of the chuck;
  • FIG. 6 is a schematic view showing an exemplary heating process of the loadlock chamber for heating two substrates.
  • FIG. 7 is a schematic view showing an exemplary cooling process of the loadlock chamber for cooling two substrates.
  • a loadlock chamber 100 in accordance with an embodiment of the present invention is illustrated that includes a chamber housing 10, a chuck 20, a support frame 30, at least one elevating mechanism 40 and a motor 50.
  • the chamber housing 10 is sealed to form a containing space for receiving the chuck 20 and the support frame 30.
  • the chamber housing 10 has a first vacuum valve 11 through which the loadlock chamber 100 connects with the exterior space and a second vacuum valve 12 through which the loadlock chamber 100 connects with a transfer chamber (not shown).
  • the first vacuum valve 11 and the second vacuum valve 12 respectively move up or down to close or open the loadlock chamber 100.
  • the chuck 20 has a circular plate portion 21 for holding a substrate thereon and a columnar shaft portion 22 extending downward from the center of the plate portion 21 for supporting the plate portion 21.
  • the plate portion 21 is disposed in the chamber housing 10.
  • the bottom of the shaft portion 22 passes through the chamber housing 10 and stretches out of the chamber housing 10.
  • the edge of the plate portion 21 concaves inward to form at least two notches 23.
  • the plate portion 21 defines four notches 23 at the edge thereof.
  • the four notches 23 are symmetrically distributed on the plate portion 21 and vertically pass through the plate portion 21.
  • the support frame 30 has a circular body portion 31 and at least two connecting portions 32 extending downward from the body portion 31.
  • the support frame 30 has four connecting portions 32.
  • Each of the connecting portions 32 horizontally protrudes to form a stack of support platforms 33.
  • the stack of support platforms 33 is perpendicular with the connecting portion 32 and parallel with the plate portion 21 of the chuck 20. Every two adjacent support platforms 33 have a certain interval therebetween.
  • each of the support platforms 33 has a basic portion 331 perpendicularly connecting with the connecting portion 32 for enlarging the space between the connecting portions 32 so that the substrate is easily placed on the plate portion 21 of the chuck 20.
  • the basic portion 331 slants downward and extends away from the connecting portion 32 to form a slant leading portion 333 and further horizontally extends away from the connecting portion 32 to form a placing portion 332 at the end thereof.
  • a vertical limiting portion 334 connects the leading portion 333 and the placing portion 332 for restricting the substrate on the placing portion 332.
  • the support frame 30 is disposed in the chamber housing 10 and the placing portions 332 of the stack of support platforms 33 are arranged in the corresponding notch 23 of the chuck 20.
  • FIG. 1 in the embodiment, there are two elevating mechanisms 40 disposed at the outside of the chamber housing 10 and connected with the body portion 31 of the support frame 30 to raise or lower the support frame 30. Alternatively, without the body portion 31, four elevating mechanisms 40 are provided and connected with the corresponding connecting portions 32 to raise or lower the connecting portions 32 simultaneously.
  • the motor 50 is disposed at the bottom of the shaft portion 22 of the chuck 20 to raise or lower the chuck 20 relative to the support frame 30.
  • a heating apparatus 60 and a cooling apparatus 70 are respectively disposed in the chuck 20 for independently heating or cooling the substrate on the chuck 20.
  • the heating apparatus 60 is a resistive heater and the cooling apparatus 70 is a liquid coolant recycle system.
  • a thermocouple 80 is disposed in the chuck 20 for detecting the temperature of the chuck 20.
  • the first vacuum valve 11 and the second vacuum valve 12 are closed. Nitrogen gas or other inert gas is introduced into the loadlock chamber 100 to regulate the pressure of the loadlock chamber 100 until the pressure of the loadlock chamber 100 is the same as atmosphere pressure, and then the first vacuum valve 11 is opened and an atmospheric transfer robot (not shown) loads the substrates on the placing portions 332.
  • the placing portions 332 which are in the same plane are parallel with the plate portion 21 of the chuck 20 and hold a piece of substrate. In the embodiment, the support frame 30 can hold five pieces of substrates. After the substrates are loaded on the placing portions 332, the first vacuum valve 11 is closed.
  • the loadlock chamber 100 is vacuumized and kept in a vacuum state like the state of the transfer chamber. If the substrates need to be pre-heated, the elevating mechanisms 40 lower the support frame 30. The substrate on the lowest placing portions 332 is lowered above the plate portion 21 which is pre-heated and has a certain interval with the plate portion 21 to be heated uniformly. If the substrates need to be pre-cooled, the substrate on the lowest placing portions 332 is lowered on the plate portion 21 which is pre-cooled to be cooled. When the temperature of the substrate reaches an expected temperature, the elevating mechanisms 40 raise the support frame 30 and the heated or cooled substrate is held on the lowest placing portions 332. Then the second vacuum valve 12 is opened.
  • a transfer robot disposed in the transfer chamber unloads the heated or cooled substrate from the loadlock chamber 100.
  • the rest substrates are heated or cooled one by one from bottom to top and unloaded from the loadlock chamber 100 by the transfer robot.
  • the support frame 30 remains motionless, and the motor 50 raises or lowers the chuck 20, or the support frame 30 and the chuck 20 keep a relative motion.
  • the first vacuum valve 11 and the second vacuum valve 12 are closed.
  • the loadlock chamber 100 is vacuumized and kept in a vacuum state like the state of the transfer chamber.
  • the second vacuum valve 12 is opened.
  • the transfer robot loads a piece of substrate on the top placing portions 332. If the substrate needs to be post-cooled, the elevating mechanisms 40 lower the support frame 30.
  • the substrate on the top placing portions 332 is put on the plate portion 21 which is pre-cooled to be cooled. If the substrate needs to be post-heated, the substrate on the top placing portions 332 is lowered on the plate portion 21 which is pre-heated to be heated.
  • the elevating mechanisms 40 raise the support frame 30 and the cooled or heated substrate is on the top placing portions 332.
  • the transfer robot loads another piece of substrate on the next placing portions 332 below the top placing portions 332.
  • the elevating mechanisms 40 lower the support frame 30.
  • the substrate on the next placing portions 332 is put on the pre-cooled plate portion 21 to be cooled or lowered on the pre-heated plate portion 21 to be heated.
  • the elevating mechanisms 40 raise the support frame 30 and the substrate is on the next placing portions 332. In the same way, other substrates are cooled or heated one by one and on the placing portions 332 from top to bottom.
  • the second vacuum valve 12 is closed.
  • the nitrogen gas or other inert gas is introduced into the loadlock chamber 100 to regulate the pressure of the loadlock chamber 100 until the pressure of the loadlock chamber 100 is the same as atmosphere pressure.
  • the first vacuum valve 11 is opened, and all of the substrates are unloaded out of the loadlock chamber 100 by the atmospheric transfer robot.
  • the support frame 30 remains motionless, and the motor 50 raises or lowers the chuck 20, or the support frame 30 and the chuck 20 keep a relative motion.
  • a method for treating the substrates using the loadlock chamber 100 is summarized as follows:
  • Step 1 introducing the nitrogen gas or other inert gas into the loadlock chamber 100 to regulate the pressure of the loadlock chamber 100 until the pressure of the loadlock chamber 100 is the same as atmosphere pressure;
  • Step 2 opening the first vacuum valve 11 and loading the substrates on the placing portions 332;
  • Step 3 closing the first vacuum valve 11 and vacuumizing the loadlock chamber 100 to keep the loadlock chamber 100 in a vacuum state like the state of the transfer chamber;
  • Step 4 lowering the support frame 30 and/or raising the chuck 20 and the substrate on the lowest placing portions 332 being lowered above the plate portion 21 and having a certain interval with the plate portion 21 to be treated or being lowered on the plate portion 21 to be treated;
  • Step 5 raising the support frame 30 and/or lowering the chuck 20 and the treated substrate being held on the lowest placing portions 332;
  • Step 6 opening the second vacuum valve 12 and unloading the treated substrate from the loadlock chamber 100;
  • Step 7 repeating the above steps 4-6 until all of the substrates are treated and unloaded from the loadlock chamber 100 one by one.
  • Step 10 vacuumizing the loadlock chamber 100 and keeping the loadlock chamber 100 in a vacuum state like the state of the transfer chamber;
  • Step 20 opening the second vacuum valve 12 and loading a piece of substrate on the top placing portions 332;
  • Step 30 lowering the support frame 30 and/or raising the chuck 20 to put the substrate on the plate portion 21 to be treated;
  • Step 40 raising the support frame 30 and/or lowering the chuck 20 and the treated substrate being on the top placing portions 332;
  • Step 50 repeating the above steps 20-40 until all of the placing portions 332 hold the substrates;
  • Step 60 closing the second vacuum valve 12 and introducing the nitrogen gas or other inert gas into the loadlock chamber 100 to regulate the pressure of the loadlock chamber 100 until the pressure of the loadlock chamber 100 is the same as atmosphere pressure;
  • Step 70 opening the first vacuum valve 11 and unloading all of the substrates out of the loadlock chamber 100.
  • the loadlock chamber 100 is capable of treating such as heating or cooling multiple substrates, and meanwhile the loadlock chamber 100 just needs once a time of nitrogen gas introduction and once a time of vacuumization, which greatly improves the work efficiency of the loadlock chamber 100.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

A load lock chamber (100) and methods for treating multiple substrates using the same are provided. The load lock chamber (100) includes a chamber housing (10), a chuck (20), a support frame (30) and at least one elevating mechanism (40). The chamber housing (10) has a first vacuum valve (11) and a second vacuum valve (12), via which the substrates are loaded in the chamber housing (10) or unloaded out of the chamber housing (10). The chuck (20) has a plate portion (21) for holding the substrates. The plate portion (21) is received in the chamber housing (10) and defines at least two notches (23). The support frame (30) received in the chamber housing (10) has at least two connecting portions (32). A stack of support platforms (33) protrudes from either of the connecting portions (32). Every support platform (33) has a placing portion (332) arranged in the notch (23) of the chuck (20). The placing portions (332) which are in the same plane are parallel with the plate portion (21) and capable of holding a piece of the substrates. The elevating mechanism (40) is used for raising or lowering the connecting portions (32) of the support frame (30).

Description

LOADLOCK CHAMBER AND METHOD FOR TREATING SUBSTRATES USING THE SAME
BACKGROUND OF THE INVENTION
1. Field of the Invention
[0001] The present invention generally relates to a semiconductor device fabrication apparatus, and more particularly relates to a loadlock chamber and a method for treating semiconductor substrates using the same.
2. The Related Art
[0002] In order to improve a semiconductor device fabrication efficiency, a loadlock chamber is employed and disposed between a transfer chamber and the exterior space for treating semiconductor substrates before or after the semiconductor substrates are processed. Generally, the loadlock chamber is used for heating or cooling the semiconductor substrates.
[0003] Refer to US patent publication No. US 2011/0308458, disclosing a loadlock chamber therein. The loadlock chamber includes a stack of four chambers divided into two loading chambers for unprocessed large substrates being placed in and two unloading chambers for processed large substrates being placed in. Each of the loading chambers and the unloading chambers includes a first inlet/outlet port, a second inlet/outlet port and an inner stage on which a large substrate is placed. Pre-heaters are disposed at the stages of the loading chambers to heat the unprocessed large substrate. Coolers are disposed at the stages of the unloading chambers to cool the processed large substrate. The unprocessed large substrates are loaded into the loading chambers or the processed large substrates are unloaded from the unloading chambers by an atmospheric transfer robot. When the atmospheric transfer robot carries the unprocessed large substrates into the loading chambers or the processed large substrates out of the unloading chambers, both the loading chambers and the unloading chambers are kept in an atmospheric state. When a transfer robot disposed in a transfer chamber connecting to the loading chambers and the unloading chambers respectively loads or unloads the large substrates, the loading chambers and the unloading chambers are kept in a vacuum state like the state of the transfer chamber. That is to say, before the unprocessed large substrates are loaded into the loading chambers, nitrogen gas is introduced into the loading chambers to make the pressure state of the loading chambers to be the same as the atmospheric state, and then the inlet ports are opened and the atmospheric transfer robot loads the unprocessed large substrates into the loading chambers. Then the inlet ports are closed, and the loading chambers are vacuumized and the unprocessed large substrates are heated. The cooling process is similar to the heating process, which is not described in detail herein.
[0004] It can be seen from the above description that the work efficiency of the loadlock chamber is very low, because each heating or cooling a piece of substrate, the loading chamber or the unloading chamber needs to be injected the nitrogen gas and vacuumized. Therefore, an improved loadlock chamber for treating the substrates is urgently desired.
SUMMARY OF THE INVENTION
[0005] Accordingly, an object of the present invention is to provide a loadlock chamber capable of treating multiple substrates.
[0006] To achieve the object, the loadlock chamber includes a chamber housing, a chuck, a support frame and at least one elevating mechanism. The chamber housing has a first vacuum valve and a second vacuum valve, via which the substrates are loaded in the chamber housing or unloaded out of the chamber housing. The chuck has a plate portion for holding the substrates. The plate portion is received in the chamber housing and defines at least two notches. The support frame is received in the chamber housing and has at least two connecting portions. A stack of support platforms protrudes from either of the connecting portions. Every support platform has a placing portion arranged in the notch of the chuck. The placing portions which are in the same plane are parallel with the plate portion of the chuck and capable of holding a piece of the substrates. The elevating mechanism is used for raising or lowering the connecting portions of the support frame.
[0007] Accordingly, an object of the present invention is to provide a method for treating multiple substrates using the loadlock chamber, comprising steps of: a) introducing inert gas into the loadlock chamber to regulate the pressure of the loadlock chamber to atmosphere pressure; b) opening the first vacuum valve and loading the multiple substrates on the placing portions; c) closing the first vacuum valve and vacuumizing the loadlock chamber to keep the loadlock chamber in a vacuum state; d) lowering the support frame and the substrate on the lowest placing portions being lowered above the plate portion and having a certain interval with the plate portion to be treated or being lowered on the plate portion to be treated; e) raising the support frame and the treated substrate being held on the lowest placing portions; f) opening the second vacuum valve and unloading the treated substrate from the loadlock chamber; g) repeating the above steps d)~f) until all of the substrates are treated and unloaded from the loadlock chamber one by one.
[0008] Accordingly, an object of the present invention is to provide another method for treating multiple substrates using the loadlock chamber, comprising steps of: a) vacuumizing the loadlock chamber and keeping the loadlock chamber in a vacuum state; b) opening the second vacuum valve and loading a piece of substrate on the top placing portions; c) lowering the support frame and the substrate being lowered on the plate portion to be treated; d) raising the support frame and the treated substrate being on the top placing portions; e) repeating the above steps b)~d) until all the placing portions hold the substrates; f) closing the second vacuum valve and introducing inert gas into the loadlock chamber to regulate the pressure of the loadlock chamber to atmosphere pressure; g) opening the first vacuum valve and unloading all of the substrates out of the loadlock chamber.
[0009] As described above, the loadlock chamber is capable of treating multiple substrates, and meanwhile the loadlock chamber just needs once a time of inert gas introduction and once a time of vacuumization, which greatly improves the work efficiency of the loadlock chamber.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] The present invention will be apparent to those skilled in the art by reading the following description of a preferred embodiment thereof, with reference to the attached drawings, in which:
[0011] FIG. 1 is a sectional view of a loadlock chamber according to the present invention;
[0012] FIG. 2 is a perspective view showing a chuck assembling with a support frame of the loadlock chamber of the present invention;
[0013] FIG. 3 is a perspective view of a support platform of the support frame;
[0014] FIG. 4 is a perspective view of the chuck; [0015] FIG. 5 is a sectional view of the chuck;
[0016] FIG. 6 is a schematic view showing an exemplary heating process of the loadlock chamber for heating two substrates; and
[0017] FIG. 7 is a schematic view showing an exemplary cooling process of the loadlock chamber for cooling two substrates.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0018] Referring to FIGS. 1-2, a loadlock chamber 100 in accordance with an embodiment of the present invention is illustrated that includes a chamber housing 10, a chuck 20, a support frame 30, at least one elevating mechanism 40 and a motor 50. The chamber housing 10 is sealed to form a containing space for receiving the chuck 20 and the support frame 30. The chamber housing 10 has a first vacuum valve 11 through which the loadlock chamber 100 connects with the exterior space and a second vacuum valve 12 through which the loadlock chamber 100 connects with a transfer chamber (not shown). The first vacuum valve 11 and the second vacuum valve 12 respectively move up or down to close or open the loadlock chamber 100.
[0019] Referring to FIGS. 2-4, the chuck 20 has a circular plate portion 21 for holding a substrate thereon and a columnar shaft portion 22 extending downward from the center of the plate portion 21 for supporting the plate portion 21. The plate portion 21 is disposed in the chamber housing 10. The bottom of the shaft portion 22 passes through the chamber housing 10 and stretches out of the chamber housing 10. The edge of the plate portion 21 concaves inward to form at least two notches 23. In the embodiment, the plate portion 21 defines four notches 23 at the edge thereof. The four notches 23 are symmetrically distributed on the plate portion 21 and vertically pass through the plate portion 21. [0020] As illustrated in FIG. 2, the support frame 30 has a circular body portion 31 and at least two connecting portions 32 extending downward from the body portion 31. Correspondingly, in the embodiment, the support frame 30 has four connecting portions 32. Each of the connecting portions 32 horizontally protrudes to form a stack of support platforms 33. The stack of support platforms 33 is perpendicular with the connecting portion 32 and parallel with the plate portion 21 of the chuck 20. Every two adjacent support platforms 33 have a certain interval therebetween. As illustrated in FIG. 3, each of the support platforms 33 has a basic portion 331 perpendicularly connecting with the connecting portion 32 for enlarging the space between the connecting portions 32 so that the substrate is easily placed on the plate portion 21 of the chuck 20. The basic portion 331 slants downward and extends away from the connecting portion 32 to form a slant leading portion 333 and further horizontally extends away from the connecting portion 32 to form a placing portion 332 at the end thereof. A vertical limiting portion 334 connects the leading portion 333 and the placing portion 332 for restricting the substrate on the placing portion 332. The support frame 30 is disposed in the chamber housing 10 and the placing portions 332 of the stack of support platforms 33 are arranged in the corresponding notch 23 of the chuck 20.
[0021] Referring to FIG. 1 again, in the embodiment, there are two elevating mechanisms 40 disposed at the outside of the chamber housing 10 and connected with the body portion 31 of the support frame 30 to raise or lower the support frame 30. Alternatively, without the body portion 31, four elevating mechanisms 40 are provided and connected with the corresponding connecting portions 32 to raise or lower the connecting portions 32 simultaneously. The motor 50 is disposed at the bottom of the shaft portion 22 of the chuck 20 to raise or lower the chuck 20 relative to the support frame 30. [0022] With reference to FIG. 5, a heating apparatus 60 and a cooling apparatus 70 are respectively disposed in the chuck 20 for independently heating or cooling the substrate on the chuck 20. In the embodiment, the heating apparatus 60 is a resistive heater and the cooling apparatus 70 is a liquid coolant recycle system. A thermocouple 80 is disposed in the chuck 20 for detecting the temperature of the chuck 20.
[0023] With reference to FIG. 6, when the loadlock chamber 100 is used for loading the substrates, the first vacuum valve 11 and the second vacuum valve 12 are closed. Nitrogen gas or other inert gas is introduced into the loadlock chamber 100 to regulate the pressure of the loadlock chamber 100 until the pressure of the loadlock chamber 100 is the same as atmosphere pressure, and then the first vacuum valve 11 is opened and an atmospheric transfer robot (not shown) loads the substrates on the placing portions 332. The placing portions 332 which are in the same plane are parallel with the plate portion 21 of the chuck 20 and hold a piece of substrate. In the embodiment, the support frame 30 can hold five pieces of substrates. After the substrates are loaded on the placing portions 332, the first vacuum valve 11 is closed. The loadlock chamber 100 is vacuumized and kept in a vacuum state like the state of the transfer chamber. If the substrates need to be pre-heated, the elevating mechanisms 40 lower the support frame 30. The substrate on the lowest placing portions 332 is lowered above the plate portion 21 which is pre-heated and has a certain interval with the plate portion 21 to be heated uniformly. If the substrates need to be pre-cooled, the substrate on the lowest placing portions 332 is lowered on the plate portion 21 which is pre-cooled to be cooled. When the temperature of the substrate reaches an expected temperature, the elevating mechanisms 40 raise the support frame 30 and the heated or cooled substrate is held on the lowest placing portions 332. Then the second vacuum valve 12 is opened. A transfer robot disposed in the transfer chamber unloads the heated or cooled substrate from the loadlock chamber 100. In the same way, the rest substrates are heated or cooled one by one from bottom to top and unloaded from the loadlock chamber 100 by the transfer robot. Alternatively, the support frame 30 remains motionless, and the motor 50 raises or lowers the chuck 20, or the support frame 30 and the chuck 20 keep a relative motion.
[0024] With reference to FIG. 7, when the loadlock chamber 100 is used for unloading the substrates, the first vacuum valve 11 and the second vacuum valve 12 are closed. The loadlock chamber 100 is vacuumized and kept in a vacuum state like the state of the transfer chamber. The second vacuum valve 12 is opened. The transfer robot loads a piece of substrate on the top placing portions 332. If the substrate needs to be post-cooled, the elevating mechanisms 40 lower the support frame 30. The substrate on the top placing portions 332 is put on the plate portion 21 which is pre-cooled to be cooled. If the substrate needs to be post-heated, the substrate on the top placing portions 332 is lowered on the plate portion 21 which is pre-heated to be heated. When the temperature of the substrate reaches an expected temperature, the elevating mechanisms 40 raise the support frame 30 and the cooled or heated substrate is on the top placing portions 332. The transfer robot loads another piece of substrate on the next placing portions 332 below the top placing portions 332. The elevating mechanisms 40 lower the support frame 30. The substrate on the next placing portions 332 is put on the pre-cooled plate portion 21 to be cooled or lowered on the pre-heated plate portion 21 to be heated. When the temperature of the substrate reaches the expected temperature, the elevating mechanisms 40 raise the support frame 30 and the substrate is on the next placing portions 332. In the same way, other substrates are cooled or heated one by one and on the placing portions 332 from top to bottom. After all the placing portions 332 hold corresponding substrates thereon, the second vacuum valve 12 is closed. The nitrogen gas or other inert gas is introduced into the loadlock chamber 100 to regulate the pressure of the loadlock chamber 100 until the pressure of the loadlock chamber 100 is the same as atmosphere pressure. Then the first vacuum valve 11 is opened, and all of the substrates are unloaded out of the loadlock chamber 100 by the atmospheric transfer robot. Alternatively, the support frame 30 remains motionless, and the motor 50 raises or lowers the chuck 20, or the support frame 30 and the chuck 20 keep a relative motion.
[0025] A method for treating the substrates using the loadlock chamber 100 is summarized as follows:
[0026] Step 1 : introducing the nitrogen gas or other inert gas into the loadlock chamber 100 to regulate the pressure of the loadlock chamber 100 until the pressure of the loadlock chamber 100 is the same as atmosphere pressure;
[0027] Step 2: opening the first vacuum valve 11 and loading the substrates on the placing portions 332;
[0028] Step 3: closing the first vacuum valve 11 and vacuumizing the loadlock chamber 100 to keep the loadlock chamber 100 in a vacuum state like the state of the transfer chamber;
[0029] Step 4: lowering the support frame 30 and/or raising the chuck 20 and the substrate on the lowest placing portions 332 being lowered above the plate portion 21 and having a certain interval with the plate portion 21 to be treated or being lowered on the plate portion 21 to be treated;
[0030] Step 5: raising the support frame 30 and/or lowering the chuck 20 and the treated substrate being held on the lowest placing portions 332; [0031] Step 6: opening the second vacuum valve 12 and unloading the treated substrate from the loadlock chamber 100;
[0032] Step 7: repeating the above steps 4-6 until all of the substrates are treated and unloaded from the loadlock chamber 100 one by one.
[0033] Another method for treating the substrates using the loadlock chamber 100 is summarized as follows:
[0034] Step 10: vacuumizing the loadlock chamber 100 and keeping the loadlock chamber 100 in a vacuum state like the state of the transfer chamber;
[0035] Step 20: opening the second vacuum valve 12 and loading a piece of substrate on the top placing portions 332;
[0036] Step 30: lowering the support frame 30 and/or raising the chuck 20 to put the substrate on the plate portion 21 to be treated;
[0037] Step 40: raising the support frame 30 and/or lowering the chuck 20 and the treated substrate being on the top placing portions 332;
[0038] Step 50: repeating the above steps 20-40 until all of the placing portions 332 hold the substrates;
[0039] Step 60: closing the second vacuum valve 12 and introducing the nitrogen gas or other inert gas into the loadlock chamber 100 to regulate the pressure of the loadlock chamber 100 until the pressure of the loadlock chamber 100 is the same as atmosphere pressure;
[0040] Step 70: opening the first vacuum valve 11 and unloading all of the substrates out of the loadlock chamber 100.
[0041] As described above, the loadlock chamber 100 is capable of treating such as heating or cooling multiple substrates, and meanwhile the loadlock chamber 100 just needs once a time of nitrogen gas introduction and once a time of vacuumization, which greatly improves the work efficiency of the loadlock chamber 100.
[0042] The foregoing description of the present invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. Such modifications and variations that may be apparent to those skilled in the art are intended to be included within the scope of this invention as defined by the accompanying claims.

Claims

WHAT IS CLAIMED IS
1. A loadlock chamber for treating multiple substrates, comprising:
a chamber housing having a first vacuum valve and a second vacuum valve, via which the substrates are loaded in the chamber housing or unloaded out of the chamber housing;
a chuck having a plate portion for holding the substrates, the plate portion received in the chamber housing and defining at least two notches;
a support frame received in the chamber housing and having at least two connecting portions, a stack of support platforms protruding from either of the connecting portions, every support platform having a placing portion arranged in the notch of the chuck, the placing portions which are in the same plane being parallel with the plate portion of the chuck and being capable of holding a piece of the substrates; and
at least one elevating mechanism for raising or lowering the connecting portions of the support frame.
2. The loadlock chamber as claimed in claim 1, wherein the chuck further includes a shaft portion extending from the center of the plate portion, the bottom of the shaft portion passes through the chamber housing and stretches out of the chamber housing, a motor is disposed at the bottom of the shaft portion to raise or lower the chuck relative to the support frame.
3. The loadlock chamber as claimed in claim 1, wherein every support platform further includes a basic portion protruding from the connecting portion and being perpendicular with the connecting portion, the basic portion slants downward and extends away from the connecting portion to form a slant leading portion and further extends horizontally to form the placing portion at the end thereof.
4. The loadlock chamber as claimed in claim 3, wherein every support platform further includes a limiting portion connecting the leading portion and the placing portion for restricting the substrate on the placing portion.
5. The loadlock chamber as claimed in claim 1, wherein the support frame further includes a body portion, the connecting portions are respectively connected with the body portion.
6. The loadlock chamber as claimed in claim 5, wherein the elevating mechanism is disposed at the outside of the chamber housing and connected with the body portion of the support frame to raise or lower the support frame.
7. The loadlock chamber as claimed in claim 1, further comprising at least another elevating mechanism, the at least another elevating mechanism connected with the corresponding connecting portions to raise or lower the connecting portions simultaneously.
8. The loadlock chamber as claimed in claim 1, further comprising a heating apparatus disposed in the chuck.
9. The loadlock chamber as claimed in claim 1, further comprising a cooling apparatus disposed in the chuck.
10. The loadlock chamber as claimed in claim 8 or 9, further comprising a thermocouple disposed in the chuck.
11. A method for treating multiple substrates using a loadlock chamber comprising a chamber housing having a first vacuum valve and a second vacuum valve, a chuck having a plate portion received in the chamber housing and defining at least two notches, a support frame capable of being raised or lowered and received in the chamber housing, the support frame having at least two stacks of support platforms, every support platform having a placing portion arranged in the notch of the chuck, the placing portions which are in the same plane being parallel with the plate portion of the chuck and being capable of holding a piece of the substrates, said method comprising steps of:
a) introducing inert gas into the loadlock chamber to regulate the pressure of the loadlock chamber to atmosphere pressure;
b) opening the first vacuum valve and loading the multiple substrates on the placing portions;
c) closing the first vacuum valve and vacuumizing the loadlock chamber to keep the loadlock chamber in a vacuum state;
d) lowering the support frame and the substrate on the lowest placing portions being lowered above the plate portion and having a certain interval with the plate portion to be treated or being lowered on the plate portion to be treated;
e) raising the support frame and the treated substrate being held on the lowest placing portions;
f) opening the second vacuum valve and unloading the treated substrate from the loadlock chamber;
g) repeating the above steps d)~f) until all of the multiple substrates are treated and unloaded from the loadlock chamber one by one.
12. A method for treating multiple substrates using a loadlock chamber comprising a chamber housing having a first vacuum valve and a second vacuum valve, a chuck having a plate portion received in the chamber housing and defining at least two notches, a support frame capable of being raised or lowered and received in the chamber housing, the support frame having at least two stacks of support platforms, every support platform having a placing portion arranged in the notch of the chuck, the placing portions which are in the same plane being parallel with the plate portion of the chuck and being capable of holding a piece of the substrates, said method comprising steps of:
a) vacuumizing the loadlock chamber and keeping the loadlock chamber in a vacuum state;
b) opening the second vacuum valve and loading a piece of substrate on the top placing portions; c) lowering the support frame and the substrate being lowered on the plate portion to be treated;
d) raising the support frame and the treated substrate being on the top placing portions;
e) repeating the above steps b)~d) until all of the placing portions hold the multiple substrates;
f) closing the second vacuum valve and introducing inert gas into the loadlock chamber to regulate the pressure of the loadlock chamber to atmosphere pressure;
g) opening the first vacuum valve and unloading all of the substrates out of the loadlock chamber.
PCT/CN2012/075992 2012-05-24 2012-05-24 Loadlock chamber and method for treating substrates using the same WO2013173999A1 (en)

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