CN117038585A - Copper-clad ceramic substrate structure - Google Patents
Copper-clad ceramic substrate structure Download PDFInfo
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- CN117038585A CN117038585A CN202311286308.2A CN202311286308A CN117038585A CN 117038585 A CN117038585 A CN 117038585A CN 202311286308 A CN202311286308 A CN 202311286308A CN 117038585 A CN117038585 A CN 117038585A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 95
- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 230000017525 heat dissipation Effects 0.000 claims abstract description 18
- 238000009413 insulation Methods 0.000 claims abstract description 14
- 239000004642 Polyimide Substances 0.000 claims description 12
- 229920001721 polyimide Polymers 0.000 claims description 12
- 230000008054 signal transmission Effects 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 18
- 230000000694 effects Effects 0.000 abstract description 8
- 230000005672 electromagnetic field Effects 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 154
- 238000010586 diagram Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structure Of Printed Boards (AREA)
Abstract
The invention relates to the technical field of module ceramic substrate structures, in particular to a copper-clad ceramic substrate structure, which comprises the following components: the right-angle copper-clad ceramic substrate body mainly comprises a ceramic substrate layer, a right-angle copper-clad layer I, a right-angle copper-clad layer II, a right-angle copper-clad layer III and a right-angle copper-clad layer IV, and a plurality of heat dissipation holes distributed at equal intervals are formed in the surface of the ceramic substrate layer. According to the invention, the right-angle copper-clad ceramic substrate with the right angle at the corner is formed by arranging the right-angle copper-clad layer I, the right-angle copper-clad layer II, the right-angle copper-clad layer III and the right-angle copper-clad layer IV, so that the problems of uneven electric field, uneven current density, uneven electromagnetic field and the like caused by unreasonable design of the copper-clad ceramic substrate can be effectively reduced, and the conditions of dielectric breakdown, burning-through of a conductive layer, insulation failure, reduction of efficiency and the like can be avoided, thereby not affecting the use effect of the copper-clad ceramic substrate.
Description
Technical Field
The invention relates to the technical field of module ceramic substrate structures, in particular to a copper-clad ceramic substrate structure.
Background
The copper-clad ceramic substrate is simply called DBC, which is one of common packaging technologies in modern high-power electronic devices and is widely used in IGBT modules, and the DBC technology plays roles of current conduction, heat dissipation and electric insulation in the IGBT modules, so that the power density, heat dissipation performance and reliability of the modules are improved;
the corner of the copper-clad ceramic substrate in the prior art is generally of a round corner structure, when an electric field line passes through the corner of the round corner, the flow of the electric field line can be bent and concentrated, so that the electric field intensity is too strong, the electric field distribution is uneven, the current density is uneven and the electromagnetic field is uneven, and the conditions of dielectric breakdown, conductive layer burning-through, insulation failure, efficiency reduction and the like of the copper-clad ceramic substrate can be caused, so that the use effect of the copper-clad ceramic substrate is affected. In view of this, we propose a copper-clad ceramic substrate structure.
Disclosure of Invention
In order to make up for the defects, the invention provides a copper-clad ceramic substrate structure, which aims to solve the defects that when electric field lines pass through corners of round corners, the electric field lines are bent and concentrated in flow, so that the electric field intensity is too strong, and the electric field distribution is uneven, the current density is uneven and the electromagnetic field is uneven in the background art.
The technical scheme of the invention is as follows:
a copper-clad ceramic substrate structure comprising:
the right-angle copper-clad ceramic substrate body mainly comprises a ceramic substrate layer, a right-angle copper-clad layer I, a right-angle copper-clad layer II, a right-angle copper-clad layer III and a right-angle copper-clad layer IV;
the heat dissipation structure is arranged on the ceramic substrate layer and is used for dissipating heat of the right-angle copper-clad ceramic substrate body;
the insulation structure is arranged on the first right-angle copper-clad layer, the second right-angle copper-clad layer, the third right-angle copper-clad layer and the fourth right-angle copper-clad layer and is used for insulating the right-angle copper-clad ceramic substrate body.
Preferably, the first right-angle copper-clad layer, the second right-angle copper-clad layer, the third right-angle copper-clad layer and the fourth right-angle copper-clad layer are arranged on the surface of the ceramic substrate layer, and the first right-angle copper-clad layer, the second right-angle copper-clad layer, the third right-angle copper-clad layer and the fourth right-angle copper-clad layer are all made of copper.
Preferably, the first and second chips are welded on the second surface of the right-angle copper-clad layer, the first chip is arranged on the left side of the second chip, and the first and second chips are made of silicon.
Preferably, the third surface of the right-angle copper-clad layer is welded with a third chip and a fourth chip, the third chip is arranged on the left side of the fourth chip, and the third chip are made of silicon.
Preferably, the right-angle copper-clad layer I, the right-angle copper-clad layer II, the right-angle copper-clad layer III and the right-angle copper-clad layer four corners are right angles, and the right-angle copper-clad layer I, the right-angle copper-clad layer II, the right-angle copper-clad layer III and the right-angle copper-clad layer IV are provided with signal transmission parts.
Preferably, the signal transmission member is mainly composed of a plurality of short bonding wires and a plurality of long bonding wires, wherein the short bonding wires and the long bonding wires are arranged and distributed, and the short bonding wires and the long bonding wires are all made of aluminum.
Preferably, the plurality of short bonding wires are arranged on the upper surfaces of the first right-angle copper-clad layer, the first chip and the second chip, and are welded with the upper surfaces of the first right-angle copper-clad layer, the first chip and the second chip in sequence respectively.
Preferably, the plurality of long bonding wires are arranged on the upper surfaces of the right-angle copper-clad layer II, the chip III, the chip IV and the right-angle copper-clad layer IV, and are welded with the upper surfaces of the right-angle copper-clad layer II, the chip III, the chip IV and the right-angle copper-clad layer IV in sequence respectively.
Preferably, the heat dissipation structure is a plurality of heat dissipation holes, and the plurality of heat dissipation holes are formed in the ceramic substrate layer without arranging a first right-angle copper-clad layer, a second right-angle copper-clad layer, a third right-angle copper-clad layer and four right-angle copper-clad layers.
Preferably, the insulation structure is a polyimide protection layer, and the polyimide protection layer is arranged on the surfaces of the first right-angle copper-clad layer, the second right-angle copper-clad layer, the third right-angle copper-clad layer and the fourth right-angle copper-clad layer.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the invention, the right-angle copper-clad ceramic substrate with the right angle at the corner is formed by arranging the right-angle copper-clad layer I, the right-angle copper-clad layer II, the right-angle copper-clad layer III and the right-angle copper-clad layer IV, so that the problems of uneven electric field, uneven current density, uneven electromagnetic field and the like caused by unreasonable design of the copper-clad ceramic substrate can be effectively reduced, and the conditions of dielectric breakdown, burning-through of a conductive layer, insulation failure, reduction of efficiency and the like can be avoided, thereby not affecting the use effect of the copper-clad ceramic substrate.
2. According to the invention, the first right-angle copper-clad layer, the second right-angle copper-clad layer, the third right-angle copper-clad layer and the plurality of radiating holes are formed in the ceramic substrate layer and are arranged around the right-angle copper-clad layer, so that the radiating path and radiating area of the whole right-angle copper-clad ceramic substrate can be increased, the heat conduction and diffusion efficiency of the whole right-angle copper-clad ceramic substrate can be further improved, the working temperature of an electronic device can be reduced, and the radiating performance of a system can be improved.
3. According to the invention, the polyimide protective layer is arranged on the first right-angle copper-clad layer, the second right-angle copper-clad layer, the third right-angle copper-clad layer and the fourth right-angle copper-clad layer, so that a certain insulation effect is achieved, and when the right-angle copper-clad ceramic substrate is used, short circuits between circuits can be effectively prevented, and a circuit protection effect is achieved.
Drawings
FIG. 1 is a schematic diagram of the overall structure of the present invention;
FIG. 2 is a schematic diagram of the right angle copper-clad ceramic substrate body structure of the present invention;
FIG. 3 is a cross-sectional view of a right angle copper clad layer of the present invention;
FIG. 4 is a schematic diagram of a right angle copper clad layer structure according to the present invention;
FIG. 5 is a schematic diagram of a signal transmission member according to the present invention;
FIG. 6 is a prior art rounded copper-clad ceramic substrate;
FIG. 7 is a schematic diagram of simulation results of a right angle copper-clad ceramic substrate body according to the present invention;
fig. 8 is a schematic diagram of simulation results of a rounded copper-clad ceramic substrate in the prior art.
In the figure: 1. a right angle copper clad ceramic substrate body; 11. a ceramic substrate layer; 12. a heat radiation hole; 13. a right-angle copper-clad layer I; 131. a polyimide protective layer; 14. a right-angle copper-clad layer II; 141. a first chip; 142. a second chip; 15. a right-angle copper-clad layer III; 151. a third chip; 152. a chip IV; 16. a right-angle copper-clad layer IV;
2. a signal transmission member; 21. a short bonding wire; 22. long bond wires.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Referring to fig. 1-8, the present invention is described in detail by the following embodiments:
a copper-clad ceramic substrate structure comprising: the right-angle copper-clad ceramic substrate body 1, the right-angle copper-clad ceramic substrate body 1 mainly comprises a ceramic substrate layer 11, a right-angle copper-clad layer 13, a right-angle copper-clad layer 14, a right-angle copper-clad layer 15 and a right-angle copper-clad layer 16, wherein the right-angle copper-clad layer 13, the right-angle copper-clad layer 14, the right-angle copper-clad layer 15 and the right-angle copper-clad layer 16 are arranged on the surface of the ceramic substrate layer 11, the right-angle copper-clad layer 13, the right-angle copper-clad layer 14, the right-angle copper-clad layer 15 and the right-angle copper-clad layer 16 are all made of copper, the chip 141 and the chip 142 are welded on the surface of the right-angle copper-clad layer 14, the chip 141 is arranged on the left side of the chip 142, the material of the chip 141 and the chip 142 is silicon, and corners of the right-angle copper-clad layer 13, the right-angle copper-clad layer 15 and the right-angle copper-clad layer 16 are all right-angle copper.
In this embodiment, the corners of the first right-angle copper-clad layer 13, the second right-angle copper-clad layer 14, the third right-angle copper-clad layer 15 and the fourth right-angle copper-clad layer 16 are designed to be right angles, and after electric simulation, from comparison of simulation results in fig. 6 and fig. 7, it can be intuitively seen that when the corners of the first right-angle copper-clad layer 13, the second right-angle copper-clad layer 14, the third right-angle copper-clad layer 15 and the fourth right-angle copper-clad layer 16 are rounded, a strong electric field with obvious color appears at the corners of the rounded corners, and the corners of the first right-angle copper-clad layer 13, the second right-angle copper-clad layer 14, the third right-angle copper-clad layer 15 and the fourth right-angle copper-clad layer 16 are right angles, and the electric field at the corners of the right-angle corners is relatively uniform, and no strong electric field aggregation appears, so that the problems of uneven electric field, uneven current density, uneven electromagnetic field, etc. generated due to unreasonable design of the copper-clad ceramic substrate are reduced.
The right-angle copper-clad layer I13, the right-angle copper-clad layer II 14, the right-angle copper-clad layer III 15 and the right-angle copper-clad layer IV 16 are provided with signal transmission parts 2, the signal transmission parts 2 mainly comprise a plurality of short bonding wires 21 which are arranged and distributed and a plurality of long bonding wires 22 which are arranged and distributed, the materials of the short bonding wires 21 and the long bonding wires 22 are aluminum, the short bonding wires 21 are arranged on the upper surfaces of the right-angle copper-clad layer I13, the chip I141 and the chip II 142 and are respectively welded with the upper surfaces of the right-angle copper-clad layer I13, the chip I141 and the chip II 142 in sequence, and the long bonding wires 22 are arranged on the upper surfaces of the right-angle copper-clad layer II 14, the chip III 151, the chip IV 152 and the right-angle copper-clad layer IV 16 and are respectively welded with the upper surfaces of the right-angle copper-clad layer II 14, the chip III 151, the chip IV 152 and the right-angle copper-clad layer IV 16 in sequence.
In this embodiment, by arranging a plurality of short bonding wires 21 and a plurality of long bonding wires 22, signal transmission between the first chip 141, the second chip 142, the third chip 151, the fourth chip 152 and the right-angle copper-clad ceramic substrate body 1 is conveniently realized.
The heat dissipation structure is arranged on the ceramic substrate layer 11 and used for dissipating heat of the right-angle copper-clad ceramic substrate body 1, the heat dissipation structure is a plurality of heat dissipation holes 12, and the plurality of heat dissipation holes 12 are formed in the ceramic substrate layer 11 at positions where the right-angle copper-clad layer I13, the right-angle copper-clad layer II 14, the right-angle copper-clad layer III 15 and the right-angle copper-clad layer IV 16 are not arranged.
In this embodiment, the first right-angle copper-clad layer 13, the second right-angle copper-clad layer 14, the third right-angle copper-clad layer 15 and the fourth right-angle copper-clad layer 16 are not disposed on the ceramic substrate layer 11, so that the heat dissipation path and heat dissipation area of the whole right-angle copper-clad ceramic substrate can be increased, the heat conduction and diffusion efficiency of the whole right-angle copper-clad ceramic substrate can be further improved, the working temperature of an electronic device can be reduced, and the heat dissipation performance of the system can be improved.
The insulation structure is arranged on the first right-angle copper-clad layer 13, the second right-angle copper-clad layer 14, the third right-angle copper-clad layer 15 and the fourth right-angle copper-clad layer 16 and used for insulating the right-angle copper-clad ceramic substrate body 1, the insulation structure is a polyimide protection layer 131, and the polyimide protection layer 131 is arranged on the surfaces of the first right-angle copper-clad layer 13, the second right-angle copper-clad layer 14, the third right-angle copper-clad layer 15 and the fourth right-angle copper-clad layer 16.
It should be noted that the polyimide protection layers 131 disposed on the second and third right-angle copper-clad layers 14 and 15 are disposed at bottoms of the first, second, third and fourth chips 141, 142, 151 and 152, and the plurality of short bonding wires 21 and the plurality of long bonding wires 22 are connected to the first, second and fourth right-angle copper-clad layers 13, 14 and 16 through the polyimide protection layers 131 disposed on surfaces of the first, second and fourth right-angle copper-clad layers 13, 14 and 16.
In this embodiment, the polyimide protection layer 131 is disposed on the first right-angle copper-clad layer 13, the second right-angle copper-clad layer 14, the third right-angle copper-clad layer 15 and the fourth right-angle copper-clad layer 16, which has a certain insulation effect, so that when the right-angle copper-clad ceramic substrate is used, short circuits between circuits can be effectively prevented, and the function of protecting the circuits is achieved.
In specific use, firstly, according to fig. 1 and 5, a right-angle copper-clad ceramic substrate and a round-angle copper-clad ceramic substrate are respectively processed and formed, then a first chip 141, a second chip 142, a third chip 151 and a fourth chip 152 are welded in a fixed area, and then a plurality of short bonding wires 21 and a plurality of long bonding wires 22 are respectively welded with the first chip 141, the second chip 142, the right-angle copper-clad layer 13, the right-angle copper-clad layer 14, the third chip 151, the fourth chip 152 and the right-angle copper-clad layer 16 in sequence;
then, voltage excitation is applied to the fourth 16 part of the right-angle copper-clad ceramic substrate and the fourth 16 part of the right-angle copper-clad ceramic substrate corresponding to the round corner copper-clad ceramic substrate to enable the right-angle copper-clad ceramic substrate and the round corner copper-clad ceramic substrate to serve as input ends, the first 13 part of the right-angle copper-clad ceramic substrate and the round corner copper-clad ceramic substrate corresponding to the right-angle copper-clad ceramic substrate serve as output ends, and then the voltage passes through the fourth 16 part of the right-angle copper-clad ceramic substrate, the fourth 152 part of the chip, the third 151 part of the right-angle copper-clad ceramic substrate, the second 14 part of the right-angle copper-clad ceramic substrate, the second 142 part of the chip, the first 141 part of the right-angle copper-clad ceramic substrate and the first 13 part of the right-angle copper-clad ceramic substrate and is output according to the sequence;
finally, the right-angle copper-clad ceramic substrate and the round-angle copper-clad ceramic substrate are respectively subjected to electric simulation, so that in comparison of simulation results of fig. 6 and 7, when the corner is a round angle, a strong electric field with obvious color appears at the corner of the round angle, and when the corner is a right angle, the electric field at the corner of the right angle is uniform, and strong electric field aggregation does not appear, thereby effectively reducing the problems of nonuniform electric field, nonuniform current density, nonuniform electromagnetic field and the like caused by unreasonable design of the copper-clad ceramic substrate, and avoiding the conditions of dielectric breakdown, conductive layer burning, insulation failure, efficiency reduction and the like, thereby influencing the use effect of the copper-clad ceramic substrate;
however, when the right-angle copper-clad ceramic substrate in the embodiment is used, the polyimide protection layer 131 is arranged on the first right-angle copper-clad layer 13, the second right-angle copper-clad layer 14, the third right-angle copper-clad layer 15 and the fourth right-angle copper-clad layer 16, so that the insulation effect can be achieved, and short circuits between circuits can be prevented; meanwhile, the first right-angle copper-clad layer 13, the second right-angle copper-clad layer 14, the third right-angle copper-clad layer 15 and the fourth right-angle copper-clad layer 16 are not arranged on the ceramic substrate layer 11, and a plurality of radiating holes 12 are formed in the positions of the first right-angle copper-clad layer, so that the radiating path and the radiating area of the whole right-angle copper-clad ceramic substrate can be increased, the heat conduction and diffusion efficiency of the whole right-angle copper-clad ceramic substrate can be further improved, the working temperature of an electronic device can be reduced, and the radiating performance of a system can be improved.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the above-described embodiments, and that the above-described embodiments and descriptions are only preferred embodiments of the present invention, and are not intended to limit the invention, and that various changes and modifications may be made therein without departing from the spirit and scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A copper-clad ceramic substrate structure, comprising:
the right-angle copper-clad ceramic substrate body (1), wherein the right-angle copper-clad ceramic substrate body (1) mainly comprises a ceramic substrate layer (11), a right-angle copper-clad layer I (13), a right-angle copper-clad layer II (14), a right-angle copper-clad layer III (15) and a right-angle copper-clad layer IV (16);
the heat dissipation structure is arranged on the ceramic substrate layer (11) and is used for dissipating heat of the right-angle copper-clad ceramic substrate body (1);
the insulation structure is arranged on the first right-angle copper-clad layer (13), the second right-angle copper-clad layer (14), the third right-angle copper-clad layer (15) and the fourth right-angle copper-clad layer (16) and is used for insulating the right-angle copper-clad ceramic substrate body (1).
2. The copper-clad ceramic substrate structure of claim 1, wherein: the right-angle copper-clad layer I (13), the right-angle copper-clad layer II (14), the right-angle copper-clad layer III (15) and the right-angle copper-clad layer IV (16) are arranged on the surface of the ceramic substrate layer (11), and the right-angle copper-clad layer I (13), the right-angle copper-clad layer II (14), the right-angle copper-clad layer III (15) and the right-angle copper-clad layer IV (16) are all made of copper.
3. The copper-clad ceramic substrate structure of claim 2, wherein: the surface of the right-angle copper-clad layer II (14) is welded with a first chip (141) and a second chip (142), the first chip (141) is arranged on the left side of the second chip (142), and the first chip (141) and the second chip (142) are made of silicon.
4. The copper-clad ceramic substrate structure of claim 2, wherein: the surface of the right-angle copper-clad layer III (15) is welded with a chip III (151) and a chip IV (152), the chip III (151) is arranged on the left side of the chip IV (152), and the chip III (151) are made of silicon.
5. The copper-clad ceramic substrate structure of claim 2, wherein: the right-angle copper-clad layer I (13), the right-angle copper-clad layer II (14), the right-angle copper-clad layer III (15) and the right-angle copper-clad layer IV (16) are right-angle corners, and signal transmission parts (2) are arranged on the right-angle copper-clad layer I (13), the right-angle copper-clad layer II (14), the right-angle copper-clad layer III (15) and the right-angle copper-clad layer IV (16).
6. The copper-clad ceramic substrate structure of claim 5, wherein: the signal transmission piece (2) mainly comprises a plurality of short bonding wires (21) which are distributed in an arrangement mode and a plurality of long bonding wires (22) which are distributed in an arrangement mode, and the short bonding wires (21) and the long bonding wires (22) are all made of aluminum.
7. The copper-clad ceramic substrate structure of claim 6, wherein: the short bonding wires (21) are arranged on the upper surfaces of the first right-angle copper-clad layer (13), the first chip (141) and the second chip (142), and are welded with the upper surfaces of the first right-angle copper-clad layer (13), the first chip (141) and the second chip (142) in sequence respectively.
8. The copper-clad ceramic substrate structure of claim 6, wherein: the long bonding wires (22) are arranged on the upper surfaces of the right-angle copper-clad layer II (14), the chip III (151), the chip IV (152) and the right-angle copper-clad layer IV (16), and are welded with the upper surfaces of the right-angle copper-clad layer II (14), the chip III (151), the chip IV (152) and the right-angle copper-clad layer IV (16) in sequence respectively.
9. The copper-clad ceramic substrate structure of claim 1, wherein: the heat dissipation structure is a plurality of heat dissipation holes (12), and the heat dissipation holes (12) are formed in the ceramic substrate layer (11) at positions where the right-angle copper-clad layer I (13), the right-angle copper-clad layer II (14), the right-angle copper-clad layer III (15) and the right-angle copper-clad layer IV (16) are not arranged.
10. The copper-clad ceramic substrate structure of claim 1, wherein: the insulation structure is a polyimide protection layer (131), and the polyimide protection layer (131) is arranged on the surfaces of the first right-angle copper-clad layer (13), the second right-angle copper-clad layer (14), the third right-angle copper-clad layer (15) and the fourth right-angle copper-clad layer (16).
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| CN112349663A (en) * | 2020-10-16 | 2021-02-09 | 上海大郡动力控制技术有限公司 | Double-layer heat dissipation structure for power semiconductor module |
| CN115985899A (en) * | 2022-12-20 | 2023-04-18 | 武汉羿变电气有限公司 | Packaging structure and packaging method of power semiconductor module |
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