CN117012662A - Monocrystalline silicon piece surface defect detection equipment - Google Patents
Monocrystalline silicon piece surface defect detection equipment Download PDFInfo
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- CN117012662A CN117012662A CN202310962312.XA CN202310962312A CN117012662A CN 117012662 A CN117012662 A CN 117012662A CN 202310962312 A CN202310962312 A CN 202310962312A CN 117012662 A CN117012662 A CN 117012662A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 27
- 230000007547 defect Effects 0.000 title claims abstract description 19
- 238000001514 detection method Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 238000001179 sorption measurement Methods 0.000 claims abstract description 35
- 230000007306 turnover Effects 0.000 claims abstract description 7
- 230000005540 biological transmission Effects 0.000 claims description 43
- 239000013078 crystal Substances 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 52
- 230000009286 beneficial effect Effects 0.000 description 7
- 238000009434 installation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 208000003464 asthenopia Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/13—Moving of cuvettes or solid samples to or from the investigating station
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
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- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention discloses monocrystalline silicon piece surface defect detection equipment, which comprises a base and also comprises: the backlight unit is embedded and arranged at the top end of the base; the image acquisition unit is positioned above the backlight unit and is used for acquiring edge image information of the silicon wafer; the silicon wafer walks on the conveyor belt unit; the gesture adjusting unit is installed in the base and comprises a liftable adsorption block, and the adsorption block is used for adsorbing a silicon wafer and driving the silicon wafer to walk below the graph acquisition unit in a 90-degree turnover mode.
Description
Technical Field
The invention relates to the technical field of monocrystalline silicon wafer detection, in particular to monocrystalline silicon wafer surface defect detection equipment.
Background
In the production process of monocrystalline silicon wafers, surface defects of the monocrystalline silicon wafers need to be detected, whether the monocrystalline silicon wafers have angles, broken edges, warpage and the like need to be observed, and the defects occur at the edge positions of the monocrystalline silicon wafers. The traditional manual visual inspection is to place a monocrystalline silicon piece under a backlight lamp, carefully observe the surface of the monocrystalline silicon piece a little, and has low efficiency, and if the monocrystalline silicon piece is inspected by eyes for a long time, the eyes are easy to generate visual fatigue under the influence of the backlight lamp. If the edges of the monocrystalline silicon piece are touched by hands to distinguish whether the monocrystalline silicon piece is unfilled, broken or warped, the monocrystalline silicon piece is scratched in case of misoperation, and the monocrystalline silicon piece is not damaged.
Disclosure of Invention
In order to achieve the above purpose, the invention discloses a monocrystalline silicon piece surface defect detection device, which comprises a base, and further comprises:
the backlight unit is embedded and arranged at the top end of the base;
the image acquisition unit is positioned above the backlight unit and is used for acquiring edge image information of the silicon wafer;
the silicon wafer walks on the conveyor belt unit;
the gesture adjusting unit is installed in the base and comprises a liftable adsorption block, and the adsorption block is used for adsorbing a silicon wafer and driving the silicon wafer to walk below the graph acquisition unit in a 90-degree turnover mode.
Preferably, the transmission belt unit comprises two transmission belts arranged in parallel.
Preferably, the image acquisition unit includes:
the upper shell is arranged above the base, and the transmission belt unit walks below the upper shell;
the arch-shaped mounting frame is connected to the bottom of the upper shell;
the high-definition cameras are respectively arranged at two ends of the bow-shaped mounting frame and are in one-to-one correspondence to collect edge image information of the silicon wafer.
Preferably, the posture adjustment unit further includes:
the action chamber is positioned in the base;
the transverse moving groove is arranged at the top end of the base, is communicated with the action chamber and is positioned between the two conveying belts;
the transverse moving block is connected in the transverse moving groove in a sliding manner;
the bottom end of the vertical rod is connected to the bottom in the action chamber in a sliding way, the top end of the vertical rod is provided with a traversing block in a penetrating way, and the adsorption block is arranged at the top end of the vertical rod;
the outer mounting ring is sleeved on the vertical rod;
the transmission rod is positioned in the action chamber and is arranged on the outer mounting ring through the connecting block;
the transmission groove is formed in the transmission rod;
the rotary arm, the first slider of sliding connection in the transmission inslot is installed to the rotary arm one end, driving motor is installed to the rotary arm other end, driving motor fixed mounting is in the action room.
Preferably, the posture adjustment unit further includes:
90 upset subassembly, 90 upset subassembly installs in the action room, 90 upset subassembly includes turning rod, rotates ring gear and drive plate, the turning rod is perpendicular to be distributed with the connecting block and installs on outer collar, rotate the ring gear install in on the montant, rotate the ring gear be located outer collar below, install on the drive plate with rotate the transmission rack of ring gear meshing, the turning rod is kept away from outer collar end and is installed the cylindricality slider, the cylindricality slider walks on the drive plate along parallelogram's orbit.
Preferably, the 90 ° flip assembly further comprises:
the bottom sliding groove is fixedly arranged in the action chamber;
the bottom sliding block is connected in the bottom sliding groove in a sliding manner and is arranged at the bottom end of the transmission plate;
and the two reset springs are oppositely arranged at the side ends of the bottom sliding blocks, and the reset springs are far away from the ends of the bottom sliding blocks and are propped against the inner walls of the bottom sliding grooves.
Preferably, the transmission plate top has offered lower guide way and last guide way side by side, and cylindricality slider sliding connection is in lower guide way and last guide way, the triangle guide block is installed in the opposite direction of transmission plate top, two the triangle guide block is central symmetry and distributes, two the oblique limit of triangle guide block and one of them right angle limit and lower guide way and last guide way constitute the parallelogram orbit of cylindricality slider walking.
Preferably, when the cylindrical sliding block walks in the lower guide groove, the transmission plate moves in a direction away from the rotating gear ring, and when the cylindrical sliding block walks in the upper guide groove, the transmission plate moves in a direction close to the rotating gear ring.
Preferably, the backlight unit comprises two groups of backlight lamps arranged in parallel, and the conveyor belt unit walks between the two groups of backlight lamps.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a front view of the present invention;
FIG. 2 is a top view of the base of the present invention;
FIG. 3 is a side view of the present invention;
FIG. 4 is a cross-sectional view of a hollow drum of the present invention;
FIG. 5 is a bottom view of the hollow bowl of the present invention;
fig. 6 is a cross-sectional view of the angle adjustment assembly of the present invention.
In the figure: 10. a base; 11. a backlight unit; 12. a graph acquisition unit; 13. a conveyor belt unit; 14. a silicon wafer; 15. a posture adjustment unit; 16. an adsorption block; 17. an upper housing; 18. an arcuate mounting bracket; 19. high definition camera; 21. a transverse moving groove; 22. a vertical rod; 23. an outer mounting ring; 24. a transmission rod; 25. a transmission groove; 26. a rotating arm; 27. a first slider; 28. a driving motor; 29. turning over the rod; 20. rotating the gear ring; 31. a drive plate; 32. a drive rack; 33. a cylindrical slider; 34. a bottom chute; 35. a return spring; 36. a lower guide groove; 37. an upper guide groove; 38. triangular guide blocks.
Detailed Description
The following description of the embodiments of the present invention will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Examples
The invention will be further described with reference to the accompanying drawings.
As shown in fig. 1 to 6, the apparatus for detecting surface defects of a monocrystalline silicon wafer according to the present embodiment includes a base 10, and further includes:
a backlight unit 11, wherein the backlight unit 11 is embedded and installed at the top end of the base 10;
the image acquisition unit 12 is positioned above the backlight unit 11, and the image acquisition unit 12 is used for acquiring edge image information of the silicon wafer 14;
a conveyor belt unit 13, on which a silicon wafer 14 runs on the conveyor belt unit 13;
the gesture adjusting unit 15 is installed in the base 10, the gesture adjusting unit 15 comprises a liftable adsorption block 16, and the adsorption block 16 is used for adsorbing the silicon wafer 14 and driving the silicon wafer 14 to walk below the graph collecting unit 12 in a 90-degree turnover mode.
The working principle and beneficial effects of the technical scheme are as follows:
the invention discloses monocrystalline silicon wafer surface defect detection equipment, quality inspectors only need to place silicon wafers 14 on a conveyor belt unit 13 one by one, a backlight unit 11 is turned on, an adsorption block 16 is lifted after the silicon wafers 14 travel below an image acquisition unit 12, after adsorption fixing of the bottoms of the silicon wafers 14 is completed, the adsorption block 16 drives the silicon wafers 14 to travel left to right under the image acquisition unit 12 to the end and then travel left to right, the image acquisition unit 12 acquires edge image information of the silicon wafers 14 for the first time, then the adsorption block 16 turns over by 90 degrees, the adsorption block 16 drives the silicon wafers 14 to travel left to right to the end under the image acquisition unit 12, and at the moment, the image acquisition unit 12 acquires the other edge image information of the silicon wafers 14 for the second time. After the collection is completed, the adsorption block 16 descends, the silicon wafer 14 falls back onto the conveyor belt unit 13, and the silicon wafer 14 continues to walk. The invention provides monocrystalline silicon piece surface defect detection equipment, wherein the image acquisition unit 12 replaces visual inspection to acquire the edge image information of the silicon piece 14, so that the detection efficiency is improved.
For example, the silicon wafer 14 has a square structure, and when the image capturing unit 12 captures two edge image information along the length direction, the silicon wafer 14 is turned by 90 °, and the image capturing unit 12 captures two edge image information along the width direction. Thus, the image acquisition unit 12 does not need to perform dynamic reversing acquisition in the whole process, so that coordinate information such as an acquisition origin, an acquisition destination, homing and the like does not need to be input in the PLC, and the cost is saved.
In one embodiment, the drive belt unit 13 comprises two conveyor belts arranged side by side.
The working principle of the technical scheme is as follows:
the silicon wafer 14 is placed in the middle on two parallel conveyor belts, and the conveyor belts drive the silicon wafer 14 to walk.
In one embodiment, the image acquisition unit 12 comprises:
an upper housing 17, wherein the upper housing 17 is mounted above the base 10, and the transmission belt unit 13 runs below the upper housing 17;
an arcuate mounting bracket 18, the arcuate mounting bracket 18 being attached to the bottom of the upper housing 17;
the high-definition cameras 19, two high-definition cameras 19 are respectively arranged at two ends of the bow-shaped mounting frame 18, and the edge image information of the silicon wafer 14 is acquired in a one-to-one correspondence mode.
The working principle and beneficial effects of the technical scheme are as follows:
the two parallel conveyor belts drive the silicon wafer 14 to walk below the upper shell 17, the two high-definition cameras 19 are arranged on the arched mounting frame 18 and used for collecting edge image information of the silicon wafer 14, and after the silicon wafer 14 is turned by 90 degrees, the other edge image information of the silicon wafer 14 is collected.
Because the silicon wafer 14 is of a square structure, in order to distinguish different edge positions, the two edge positions in the length direction of the silicon wafer 14 and the two edge positions in the width direction of the silicon wafer 14 are specially defined, and the two edge positions in the length direction of the silicon wafer 14 and the two edge positions in the width direction of the silicon wafer 14 are vertically distributed, so that after the silicon wafer 14 is turned by 90 degrees, two high-definition cameras 19 can accurately acquire edge image information in different directions.
In one embodiment, the posture adjustment unit 15 further includes:
an action chamber located within the base 10;
the transverse moving groove 21 is formed in the top end of the base 10 and is communicated with the action chamber, and the transverse moving groove 21 is positioned between two conveying belts;
the transverse moving block is connected in the transverse moving groove 21 in a sliding manner;
the bottom end of the vertical rod 22 is slidably connected to the bottom in the action chamber, a transverse moving block is arranged at the top end of the vertical rod 22 in a penetrating manner, and the adsorption block 16 is arranged at the top end of the vertical rod 22;
the outer mounting ring 23 is sleeved on the vertical rod 22;
the transmission rod 24 is positioned in the action chamber, and is arranged on the outer mounting ring 23 through a connecting block;
the transmission groove 25 is formed in the transmission rod 24;
the rotary arm 26, the first slider 27 of sliding connection in the transmission groove 25 is installed to the rotary arm 26 one end, the driving motor 28 is installed to the rotary arm 26 other end, driving motor 28 fixed mounting is in the action room.
The working principle and beneficial effects of the technical scheme are as follows:
the driving motor 28 installed in the action chamber works so as to drive the rotating arm 26 installed at the output end of the driving motor 28 to rotate, the rotating arm 26 drives the first sliding block 27 installed on the rotating arm to slide in the transmission groove 25, and then drives the transmission rod 24, the outer installation ring 23 connected with the transmission rod 24, the vertical rod 22 sleeved in the outer installation ring 23 and the transverse moving block installed on the vertical rod 22 to transversely move along the transverse moving groove 21, and then drives the adsorption block 16 installed at the top end of the vertical rod 22 to transversely move, and after the driving motor 28 drives the rotating arm 26 to rotate for a whole circle, the vertical rod 22 is driven to walk for one cycle from left to right to the end and then from right to left, and the vertical rod 22 further drives the adsorption block 16 to walk for one cycle from left to right to the end along the transverse moving groove 21. Thus, the two high-definition cameras 19 can collect the edge image information of the silicon wafer 14 for the first time.
In one embodiment, the posture adjustment unit 15 further includes:
90 upset subassembly, 90 upset subassembly installs in the action room, 90 upset subassembly includes turning rod 29, rotates ring gear 20 and drive plate 31, turning rod 29 is perpendicular distribution with the connecting block and installs on outer collar 23, rotate ring gear 20 install in on montant 22, rotate ring gear 20 and lie in outer collar 23 below, install on the drive plate 31 with rotate ring gear 20 engaged drive rack 32, turning rod 29 is kept away from outer collar 23 end and is installed cylindricality slider 33, cylindricality slider 33 walk on drive plate 31 along parallelogram's orbit.
The working principle and beneficial effects of the technical scheme are as follows:
after the two high-definition cameras 19 collect the edge image information of the silicon wafer 14 for the first time, the vertical rod 22 drives the adsorption block 16 to walk to the end from right to left along the transverse moving groove 21, and as the cylindrical sliding block 33 on the turning rod 29 drives the transmission plate 31 to move towards the direction close to the rotating gear ring 20, when the vertical rod 22 moves to the position close to the transmission gear rack 32, the rotating gear ring 20 is meshed with the transmission gear rack 32, and then the vertical rod 22 is driven to rotate in the outer mounting ring 23, so that the adsorption block 16 mounted on the vertical rod 22 is driven to rotate, and the adsorption block 16 finishes 90-degree turning of the silicon wafer 14 positioned on the adsorption block 16.
In one example, the 90 ° flip assembly further comprises:
a bottom chute 34, wherein the bottom chute 34 is fixedly installed in the operation chamber;
the bottom sliding block is slidably connected in the bottom sliding groove 34, and is installed at the bottom end of the transmission plate 31;
and the two reset springs 35 are oppositely arranged at the side ends of the bottom sliding blocks, and the reset springs 35 are far away from the side ends of the bottom sliding blocks and are propped against the inner wall of the bottom sliding groove 34.
The working principle and beneficial effects of the technical scheme are as follows:
when the vertical rod 22 drives the adsorption block 16 to walk from left to right along the transverse moving groove 21, the transmission plate 31 drives the bottom sliding block to move in the direction away from the rotary gear ring 20 in the bottom sliding groove 34, when the adsorption block 16 walks from left to right to the end along the transverse moving groove 21, the rotating arm 26 rotates 180 degrees clockwise, when the rotating arm 26 rotates clockwise, the adsorption block 16 walks from right to left along the transverse moving groove 21, and at the moment, the transmission plate 31 drives the bottom sliding block to move in the direction close to the rotary gear ring 20 in the bottom sliding groove 34, so that after the adsorption block 16 walks from right to left to the end along the transverse moving groove 21, the adsorption block 16 finishes 90-degree overturning of the silicon wafer 14 positioned on the adsorption block under the cooperation of the transmission rack 32 and the rotary gear ring 20.
In one embodiment, the top end of the driving plate 31 is provided with a lower guide groove 36 and an upper guide groove 37 in parallel, the cylindrical sliding block 33 is slidably connected in the lower guide groove 36 and the upper guide groove 37, the top end of the driving plate 31 is provided with triangular guide blocks 38 in opposite directions, the two triangular guide blocks 38 are distributed in a central symmetry manner, and the inclined edge end and one right angle edge end of the two triangular guide blocks 38 and the lower guide groove 36 and the upper guide groove 37 form a parallelogram track for the cylindrical sliding block 33 to walk.
The working principle and beneficial effects of the technical scheme are as follows:
when the vertical rod 22 drives the adsorption block 16 to walk from left to right along the traversing groove 21, the cylindrical sliding block 33 slides in the lower guide groove 36, at this time, the transmission plate 31 moves away from the rotating gear ring 20, and when the adsorption block 16 walks from left to right to the end along the traversing groove 21, the cylindrical sliding block 33 breaks away from the triangular guide block 38 positioned at the right end of the transmission plate 31, under the reset action of the reset spring 35, the transmission plate 31 is reset slightly towards the direction close to the rotating gear ring 20, at this time, the cylindrical sliding block 33 is clamped at the bevel edge end of the triangular guide block 38, and when the rotating arm 26 rotates clockwise, the cylindrical sliding block 33 slides into the upper guide groove 37 along the bevel edge end of the triangular guide block 38, thereby driving the transmission plate 31 to move towards the direction close to the rotating gear ring 20, at this time, the vertical rod 22 drives the adsorption block 16 to walk from right to left along the transverse moving groove 21, and when the adsorption block 16 walks from right to left to reach the end quickly along the transverse moving groove 21, the two high-definition cameras 19 finish collecting the edge image information of the silicon wafer 14 for the first time, under the cooperation of the transmission rack 32 and the rotating gear ring 20, the adsorption block 16 finishes turning over 90 ° of the silicon wafer 14 positioned thereon, and when the cylindrical sliding block 33 is separated from the triangular guide block 38 positioned at the left end of the transmission plate 31, the transmission plate 31 is reset slightly far away from the rotating gear ring 20 under the reset action of the reset spring 35, so that the cylindrical sliding block 33 is close to the bevel edge end of the triangular guide block 38, at this time, the rotating arm 26 rotates clockwise, and the two high-definition cameras 19 perform second collection of the other edge image information of the silicon wafer 14. And after the rotating arm 26 completes one turn clockwise for the second time, the two high-definition cameras 19 complete the second acquisition of the image information of the other edge of the silicon wafer 14.
In one embodiment, the driving plate 31 moves away from the rotating ring gear 20 when the cylindrical slider 33 is moved in the lower guide groove 36, and the driving plate 31 moves toward the rotating ring gear 20 when the cylindrical slider 33 is moved in the upper guide groove 36.
In one embodiment, the backlight unit 11 includes two sets of backlight lamps arranged in parallel, and the conveyor belt unit 13 walks between the two sets of backlight lamps.
The beneficial effects of the technical scheme are as follows:
the two groups of backlight lamps are arranged in parallel and are close to the edge position of the silicon wafer 14, so that the high-definition camera 19 can conveniently collect the edge image information of the silicon wafer 14.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.
Claims (9)
1. The monocrystalline silicon piece surface defect detection equipment comprises a base (10), and is characterized by further comprising: the embedded backlight unit (11) installed at the top end of the base (10), the image acquisition unit (12) is located above the backlight unit (11), the image acquisition unit (12) is used for acquiring edge image information of the silicon wafer (14), the silicon wafer (14) walks on the conveying belt unit (13), the posture adjustment unit (15) is installed in the base (10), the posture adjustment unit (15) comprises a liftable adsorption block (16), the adsorption block (16) is used for adsorbing the silicon wafer (14) and driving the silicon wafer (14) to walk below the image acquisition unit (12) in a 90-degree turnover mode.
2. A monocrystalline silicon piece surface defect detection equipment according to claim 1, characterized in that the drive belt unit (13) comprises two parallel arranged conveyor belts.
3. The monocrystalline silicon piece surface defect detection device of claim 1, wherein the image acquisition unit (12) comprises:
the upper shell (17), the said upper shell (17) is installed above the base (10), the drive belt unit (13) walks under the upper shell (17);
-an arcuate mounting bracket (18), said arcuate mounting bracket (18) being connected to the bottom of the upper housing (17);
the high-definition cameras (19), the two high-definition cameras (19) are respectively arranged at two ends of the arched mounting frame (18), and the edge image information of the silicon wafer (14) is acquired in a one-to-one correspondence mode.
4. The single crystal silicon wafer surface defect detection apparatus according to claim 1, wherein the posture adjustment unit (15) further comprises: the utility model provides a be located the action room in base (10), sideslip groove (21) are offered on base (10) top, and communicate in the action room, sideslip piece sliding connection is in sideslip groove (21), montant (22) bottom sliding connection is in the action room bottom, sideslip piece is worn to establish on montant (22) top, adsorption block (16) are installed on montant (22) top, outer collar (23) cover is located on montant (22), transfer line (24) are located the action room, and install on outer collar (23) through the connecting block, transfer line (25) are offered on transfer line (24), first slider (27) in transfer line (25) are installed to rocking arm (26) one end sliding connection, driving motor (28) are installed to the rocking arm (26) other end, driving motor (28) fixed mounting is in the action room.
5. The apparatus for detecting surface defects of a silicon single crystal wafer according to claim 4, wherein said posture adjustment unit (15) further comprises: install in the indoor 90 upset subassemblies of action, 90 upset subassemblies include turnover rod (29), rotate ring gear (20) and drive plate (31), turnover rod (29) are perpendicular to the connecting block and distribute and install on outer collar (23), rotate ring gear (20) install in on montant (22), rotate ring gear (20) and lie in outer collar (23) below, install on drive plate (31) with rotate ring gear (20) engaged transmission rack (32), column slider (33) are installed to outer collar (23) end is kept away from to turnover rod (29), column slider (33) walk on drive plate (31) along parallelogram's orbit.
6. The apparatus for detecting surface defects of a silicon single crystal wafer according to claim 5, wherein the 90 ° flip assembly further comprises:
a bottom chute (34), the bottom chute (34) being fixedly mounted in the action chamber;
the bottom sliding block is connected in the bottom sliding groove (34) in a sliding manner, and is arranged at the bottom end of the transmission plate (31);
and the two reset springs (35) are oppositely arranged at the side ends of the bottom sliding blocks, and the reset springs (35) are propped against the inner wall of the bottom sliding groove (34) away from the ends of the bottom sliding blocks.
7. The monocrystalline silicon piece surface defect detection device according to claim 5, wherein a lower guide groove (36) and an upper guide groove (37) are arranged at the top end of the transmission plate (31) in parallel, the cylindrical sliding block (33) is slidably connected in the lower guide groove (36) and the upper guide groove (37), triangular guide blocks (38) are oppositely arranged at the top end of the transmission plate (31), the two triangular guide blocks (38) are distributed in a central symmetry mode, and the inclined edge ends of the two triangular guide blocks (38) and one right-angle edge end form a parallelogram track for the cylindrical sliding block (33) to walk with the lower guide groove (36) and the upper guide groove (37).
8. A monocrystalline silicon piece surface defect detection equipment in accordance with claim 7, characterized in that the transmission plate (31) moves away from the rotating ring gear (20) when the cylindrical slider (33) walks in the lower guide groove (36), and the transmission plate (31) moves towards the rotating ring gear (20) when the cylindrical slider (33) walks in the upper guide groove (36).
9. A monocrystalline silicon piece surface defect detection equipment according to claim 1, characterized in that the backlight unit (11) comprises two groups of side-by-side backlight lamps, the conveyor belt unit (13) running between the two groups of backlight lamps.
Priority Applications (1)
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080000303A (en) * | 2006-06-27 | 2008-01-02 | 삼성전자주식회사 | Method of detecting a defect in silicon substrate and apparatus for the same |
| KR20090081986A (en) * | 2008-01-25 | 2009-07-29 | 주식회사 탑 엔지니어링 | Position sensing divice for bonding machine and manufacturing method thereof |
| CN112623768A (en) * | 2020-12-04 | 2021-04-09 | 苏州天准科技股份有限公司 | Continuous overturning feeding device and intelligent silicon wafer sorting machine |
| CN113758930A (en) * | 2021-08-27 | 2021-12-07 | 博众精工科技股份有限公司 | Silicon wafer detection device |
| WO2022233170A1 (en) * | 2021-05-07 | 2022-11-10 | 拉普拉斯(无锡)半导体科技有限公司 | Wafer guiding system for silicon wafers |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080000303A (en) * | 2006-06-27 | 2008-01-02 | 삼성전자주식회사 | Method of detecting a defect in silicon substrate and apparatus for the same |
| KR20090081986A (en) * | 2008-01-25 | 2009-07-29 | 주식회사 탑 엔지니어링 | Position sensing divice for bonding machine and manufacturing method thereof |
| CN112623768A (en) * | 2020-12-04 | 2021-04-09 | 苏州天准科技股份有限公司 | Continuous overturning feeding device and intelligent silicon wafer sorting machine |
| WO2022233170A1 (en) * | 2021-05-07 | 2022-11-10 | 拉普拉斯(无锡)半导体科技有限公司 | Wafer guiding system for silicon wafers |
| CN113758930A (en) * | 2021-08-27 | 2021-12-07 | 博众精工科技股份有限公司 | Silicon wafer detection device |
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