CN215812463U - Silicon wafer detection device - Google Patents
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- CN215812463U CN215812463U CN202122046124.1U CN202122046124U CN215812463U CN 215812463 U CN215812463 U CN 215812463U CN 202122046124 U CN202122046124 U CN 202122046124U CN 215812463 U CN215812463 U CN 215812463U
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Abstract
The utility model relates to the technical field of silicon wafer detection and discloses a silicon wafer detection device. The silicon wafer detection device comprises a transmission unit, a collection piece, an infrared light source and an adjusting component. The conveying unit is used for conveying the silicon wafer along the conveying direction; the collecting part and the infrared light source are respectively arranged on two sides of the conveying unit, which are perpendicular to the conveying direction, and light rays emitted by the infrared light source can pass through the silicon wafer and then reach the collecting end of the collecting part; the adjusting part is provided with two, and two adjusting part are connected respectively in gathering piece and infrared light source, and adjusting part can adjust the angle of gathering piece or infrared light source. The utility model enlarges the adjusting range of the relative angle between the acquisition piece and the infrared source, ensures the imaging effect, improves the definition of the defects of hidden cracks and the like on the silicon wafer on the acquired image, and ensures the accuracy of the detection result.
Description
Technical Field
The utility model relates to the technical field of silicon wafer detection, in particular to a silicon wafer detection device.
Background
With the development of science and technology, the global photovoltaic industry is brought up. The silicon chip is one of important materials in the photovoltaic industry and is used as a carrier of the solar cell, and the quality of the silicon chip determines the conversion efficiency of the solar cell, so that the detection of defects such as hidden cracks on the silicon chip is an important link for manufacturing the cell.
With the development of industrial technology, the speed of a silicon wafer production line is continuously improved, and manual detection has limitation on the speed and cannot keep up with the speed of the production line. Therefore, machine vision detection is imperative to replace manual detection, a high-speed trigger camera is used for shooting the silicon wafer on the production line, analysis is carried out through an image processing technology, and the silicon wafer with defects is detected. In the prior art, the device for detecting the silicon wafer subfissure has poor imaging effect, can not be clearly displayed on an image, and can not ensure the accuracy of a silicon wafer detection result.
Based on this, there is a need for a silicon wafer inspection apparatus to solve the above-mentioned problems.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a silicon wafer detection device, which enlarges the adjustment range of the relative angle between a collection piece and an infrared light source, ensures the imaging effect, improves the definition of defects such as hidden cracks on a silicon wafer on a collected image, and ensures the accuracy of a detection result.
In order to achieve the purpose, the utility model adopts the following technical scheme:
a silicon wafer inspection apparatus comprising:
a transfer unit for transferring the silicon wafer in a transfer direction;
collecting parts;
the acquisition part and the infrared light source are respectively arranged on two sides of the conveying unit, which are perpendicular to the conveying direction, and light rays emitted by the infrared light source can pass through the silicon wafer and then reach the acquisition end of the acquisition part;
the adjusting part is provided with two, two the adjusting part connect respectively in gather the piece with infrared light source, the adjusting part can be adjusted gather the piece or infrared light source's angle.
As an optional technical scheme of a silicon chip detection device, the adjusting part includes the base and rotates the piece, gather the piece or infrared light source connect in rotate on the piece, be provided with the pivot on the rotation piece, the pivot is rotated and is worn to locate the base, the arc wall has been seted up on the rotation piece, the centre of a circle of arc wall is located on the axis of pivot, the base orientation one side of rotating the piece is provided with the arch, protruding at least part is located in the arc wall, just the arch can be followed the arc wall slides.
As an optional technical scheme of a silicon chip detection device, at least one regulating assembly includes the slide, the spout has been seted up on the rotation piece, the spout is followed the radial direction of arc wall extends, corresponds gather the piece or infrared light source connect in the slide, the slide can be followed the spout slides, so that correspond gather the piece or infrared light source can be close to or keep away from the transfer unit.
As an optional technical scheme of the silicon wafer detection device, the silicon wafer detection device further comprises two moving assemblies, the two moving assemblies are detachably connected with the two adjusting assemblies in a one-to-one correspondence mode, and the moving assemblies can drive the collecting members or the infrared light sources to be close to or far away from the conveying unit.
As an optional technical scheme of the silicon wafer detection device, the moving assembly comprises a sliding rail, a moving plate and a driving piece, the sliding rail is perpendicular to the conveying direction, the moving plate is in sliding fit with the sliding rail, the driving piece is connected to the moving plate, the driving piece can drive the moving plate to slide along the sliding rail, and the moving plate is connected to the adjusting assembly.
As an optional technical scheme of the silicon wafer detection device, the acquisition part and an imaging light path between the silicon wafers and a light source light path emitted by the infrared light source are arranged at an included angle, and the imaging light path, the light source light path and the silicon wafers can intersect at the same point.
As an optional technical solution of the silicon wafer detection apparatus, the light source light path emitted by the infrared light source is arranged perpendicular to the transmission direction, and the imaging light path between the collecting member and the silicon wafer is arranged obliquely to the transmission direction; or the like, or, alternatively,
the light source light path emitted by the infrared light source is arranged obliquely to the transmission direction, and the imaging light path between the acquisition piece and the silicon wafer is arranged perpendicular to the transmission direction.
As an optional technical scheme of a silicon chip detection device, the conveying unit includes two conveying pieces that set up along the direction of transfer interval, the conveying piece can be followed the direction of transfer conveying the silicon chip, the silicon chip is arranged in the conveying piece deviates from one side of infrared light source, two form the detection space between the conveying piece, the light that infrared light source sent can pass the detection space arrives the silicon chip.
As an optional technical scheme of the silicon wafer detection device, the acquisition part is a short wave infrared linear array camera; and/or the infrared light source is a linear light source and can emit short-wave infrared light.
As an optional technical solution of the silicon wafer detection apparatus, the silicon wafer detection apparatus further includes a feeding unit, and the feeding unit can pick up the silicon wafer and supply the silicon wafer to the conveying unit.
The utility model has the beneficial effects that: the silicon wafer detection device provided by the utility model comprises a transmission unit, two acquisition parts, an infrared light source and two adjusting components, wherein one of the two adjusting components can adjust the angle of the acquisition part, so that the acquisition position of the acquisition part on a silicon wafer can be conveniently adjusted to a position with a better imaging effect, and the other adjusting component can adjust the angle of the infrared light source, so that the brightness of the acquisition position of the acquisition part can be favorably adjusted, the brightness of an image acquired by the acquisition part can be adjusted, and the imaging effect is ensured. The silicon chip detection device that this embodiment provided sets up two adjusting part for gather the piece and all can adjust with infrared light source's angle, enlarged the control range of the relative angle between collection piece and the infrared light source, guaranteed the imaging effect, thereby improved defects such as the latent clear degree on gathering the image such as splitting on the silicon chip, guaranteed the degree of accuracy of testing result. And the infrared light source and the collecting piece are respectively arranged at two sides of the silicon chip, so that the situation that when the collecting piece and the infrared light source are arranged at the same side of the silicon chip, light emitted by the infrared light source is directly reflected into the collecting piece by the silicon chip is avoided, and the imaging quality is further ensured.
Drawings
FIG. 1 is a front view of a silicon wafer on a silicon wafer inspection apparatus according to an embodiment of the present invention at a first position;
FIG. 2 is a schematic structural diagram of a silicon wafer on a silicon wafer detection apparatus according to an embodiment of the present invention at a first position;
FIG. 3 is a front view of a silicon wafer on a silicon wafer inspection apparatus according to an embodiment of the present invention at a second position;
FIG. 4 is a schematic structural diagram of a silicon wafer on a silicon wafer inspection apparatus according to an embodiment of the present invention at a second position;
fig. 5 is a partially enlarged view of a portion a in fig. 4.
In the figure:
10. a silicon wafer;
1. collecting parts; 2. an infrared light source;
3. an adjustment assembly; 31. a base; 32. a rotating member; 321. an arc-shaped slot; 322. a chute; 33. a slide base;
4. a conveying member; 41. and detecting the space.
Detailed Description
In order to make the technical problems solved, technical solutions adopted and technical effects achieved by the present invention clearer, the technical solutions of the embodiments of the present invention will be described in further detail below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, unless expressly stated or limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, removably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The technical scheme of the utility model is further explained by the specific implementation mode in combination with the attached drawings.
The embodiment provides a silicon wafer detection device. Specifically, as shown in fig. 1, the silicon wafer detection device comprises a transmission unit, a collection member 1, an infrared light source 2 and an adjusting assembly 3. The conveying unit is used for conveying the silicon wafer 10 along a conveying direction; the collecting part 1 and the infrared light source 2 are respectively arranged at two sides of the conveying unit, which are vertical to the conveying direction, and light rays emitted by the infrared light source 2 can pass through the silicon wafer 10 and then reach the collecting end of the collecting part 1; adjusting part 3 is provided with two, and two adjusting part 3 are connected respectively in gathering 1 and infrared light source 2, and adjusting part 3 can adjust the angle of gathering 1 or infrared light source 2, specifically, adjusts the angle of gathering 1 and infrared light source 2 for direction of transfer.
The silicon chip detection device that this embodiment provided includes the transfer unit, gather 1, infrared light source 2 and adjusting part 3, adjusting part 3 is provided with two, one of them angle that can adjust and gather 1, be convenient for adjust gather the collection position of 1 on silicon chip 10, be convenient for adjust to the better position of formation of image effect, infrared light source 2's angle can be adjusted to another adjusting part 3, do benefit to the luminance of the collection position of adjustment collection 1, thereby can adjust the luminance of the image of gathering 1 collection, the imaging effect has been guaranteed. The silicon chip detection device that this embodiment provided sets up two adjusting part 3 for gather 1 and infrared light source 2's angle and all can adjust, enlarged the control range of the relative angle between gathering 1 and infrared light source 2, guaranteed the imaging effect, thereby improved the definition of defects such as the latent crack on silicon chip 10 on the image of gathering, guaranteed the degree of accuracy of testing result. Moreover, the infrared light source 2 and the collecting part 1 are respectively arranged at two sides of the silicon chip 10, so that the situation that when the collecting part 1 and the infrared light source 2 are arranged at the same side of the silicon chip 10, light emitted by the infrared light source is directly reflected into the collecting part 1 by the silicon chip 10 is avoided, and the imaging quality is further ensured.
Specifically, the transfer direction is set horizontally, and the silicon wafer 10 may be transferred from left to right or from right to left with respect to the directions in fig. 1 to 4. The collecting piece 1 is arranged above the conveying unit, and the infrared light source 2 is arranged below the conveying unit. In this embodiment, the silicon wafer 10 is transferred from left to right, the silicon wafer is at a first position in fig. 1 and 2, the silicon wafer 10 is at a second position in fig. 3 and 4, the silicon wafer 10 sequentially passes through the first position and the second position along the transfer direction, the right edge of the silicon wafer 10 is a first edge, and the left edge of the silicon wafer 10 is a second edge. In other embodiments, the conveying direction may also be vertically arranged, and is not limited herein.
Specifically, the conveying unit comprises two conveying members 4 arranged at intervals along the conveying direction, the conveying members 4 can convey the silicon wafer 10 along the conveying direction, the silicon wafer 10 is arranged on one side, away from the infrared light source 2, of the conveying members 4, a detection space 41 is formed between the two conveying members 4, and light emitted by the infrared light source 2 can penetrate through the detection space 41 to reach the silicon wafer 10. The detection space 41 is provided for the infrared light source 2 to illuminate the silicon wafer 10.
Specifically, the left conveyance member 4 is set as a first conveyance member, and the right conveyance member 4 is set as a second conveyance member. When the silicon wafer 10 is located on the first conveying member, the first edge of the silicon wafer 10 protrudes from the first conveying member and is located in the detection space 41, and at this time, the silicon wafer 10 is located at the first position. When the silicon wafer 10 is located on the second conveying member, the second edge of the silicon wafer 10 protrudes from the second conveying member and is located in the detection space 41, and at this time, the silicon wafer 10 is located at the second position. It will be appreciated that the length of the sensing space 41 should be less than the length of the silicon wafer 10 in order to avoid using other structures to transfer the silicon wafer 10 from the first transfer member to the second transfer member.
In this embodiment, the conveying member 4 is a conveyor belt, which is simple in structure and low in cost and extends in the conveying direction. The structure of the conveyor belt is a common structure in the prior art and is not described in detail herein. In other embodiments, the transfer unit may also be a robot, and is not limited herein.
In this embodiment, the collecting member 1 is a short wave infrared linear array camera, the collecting end is a lens, and the infrared light source 2 is a linear light source and can emit short wave infrared light. In other embodiments, the collecting member 1 and the infrared light source 2 may also adopt other structures, which are not limited herein.
Specifically, an imaging light path between the collecting piece 1 and the silicon wafer 10 and a light source light path emitted by the infrared light source 2 form an included angle, and the structural arrangement can be beneficial to increasing the definition of the hidden crack in an image collected by the collecting piece 1. And the imaging light path, the light source light path and the silicon chip 10 can intersect at the same point, so that the brightness of the acquisition part 1 in the acquisition area on the silicon chip 10 can be improved, the imaging quality is further improved, and the accuracy of the detection result is improved.
Preferably, the light source path emitted by the infrared light source 2 is perpendicular to the conveying direction, and the imaging light path between the collecting member 1 and the silicon wafer 10 is inclined to the conveying direction. After light emitted by the infrared light source 2 is incident from one end of the silicon wafer 10, the light is reflected, refracted, scattered and the like for multiple times in the silicon wafer 10 and then is emitted from the other end of the silicon wafer 10, it can be understood that the light changes the propagation direction in the silicon wafer 10, only part of the light can be emitted from the collection area of the collection part 1 to illuminate the collection area, and the brightness of emergent light of the silicon wafer 10 is reduced compared with that of incident light. When the silicon wafer 10 passes through the light source light path, the light source light path is perpendicular to the transmission direction of the silicon wafer 10, light which changes the transmission direction in the silicon wafer 10 is less, the difference between the brightness of emergent light and the brightness of incident light of the silicon wafer 10 is reduced, the brightness in an acquisition area is ensured, and the imaging quality is further ensured.
In this embodiment, the collecting member 1 is disposed above the first transmitting member, that is, the collecting member 1 is disposed on the left side of the infrared light source 2, and an imaging light path between the collecting member 1 and the silicon wafer 10 is inclined downward toward the detection space 41 and forms an included angle of 10 ° to 60 ° with the vertical direction, specifically, α in fig. 1 is 10 ° to 60 °, and in other embodiments, a specific angle value can be adaptively selected. The infrared light source 2 is disposed directly below the detection space 41.
Further, only one collecting member 1 is provided in the present embodiment. In other embodiments, two collecting pieces 1 can be further arranged, the two collecting pieces 1 are respectively arranged on two sides of the infrared light source 2, the two collecting pieces 1 are obliquely arranged, imaging areas on the silicon wafer 10 are the same, and the subfissure on the silicon wafer 10 is detected through two times of imaging, so that the reliability of a silicon wafer detection result is further ensured.
In other embodiments, the light path of the light source emitted by the infrared light source 2 may be inclined to the transmission direction, and the imaging light path between the collecting element 1 and the silicon wafer 10 is perpendicular to the transmission direction, which is not limited herein.
Preferably, as shown in fig. 5, the adjusting assembly 3 includes a base 31 and a rotating member 32. Gather 1 or infrared light source 2 and connect on rotating 32, rotate and be provided with the pivot on the piece 32, the pivot rotates and wears to locate base 31, realizes rotating 32 and base 31's relative rotation to drive and gather 1 or infrared light source 2's rotation. Specifically, the rotating shaft is arranged along the horizontal direction and is perpendicular to the conveying direction. The arc-shaped groove 321 is formed in the rotating part 32, the circle center of the arc-shaped groove 321 is located on the axis of the rotating shaft, the base 31 is provided with a protrusion towards one side of the rotating part 32, at least part of the protrusion is located in the arc-shaped groove 321, the protrusion can slide along the arc-shaped groove 321, the arc-shaped groove 321 is arranged, when the rotating part 32 rotates to play a guiding role, the connecting structure between the rotating part 32 and the base 31 is also increased, and the structure of the adjusting assembly 3 is more stable. In the present embodiment, the central angle of the arc-shaped groove 321 is 90 °. In other embodiments, a driving motor may be provided to drive the rotation member 32 to rotate, and a locking bolt may be provided to fix the relative angle between the rotation member 32 and the base 31.
Specifically, the adjusting member 3 connected to the pickup 1 is set as a first adjusting member, and the adjusting member 3 connected to the infrared light source 2 is set as a second adjusting member. I.e. the first adjustment assembly is arranged above the first conveyor and the second adjustment assembly is arranged directly below the detection space 41. In this embodiment, the base 31 and the rotating member 32 of the first adjusting assembly are both plate-shaped, and both are vertically disposed and extend along the conveying direction, and the base 31 is parallel to and attached to one side of the rotating member 32. The base 31 of the second adjusting component is set to be U-shaped, the infrared light source 2 is arranged in the opening of the U-shaped structure, the rotating parts 32 are arranged in two numbers, the infrared light source 2 is arranged between the two rotating parts 32 and is connected with the two rotating parts 32 respectively on the inner sides of two side arms of the U-shaped structure, and the stability of the infrared light source 2 during rotation is improved.
Further, at least one adjusting assembly 3 further includes a sliding base 33, a sliding slot 322 is formed in the rotating member 32, the corresponding collecting member 1 or the infrared light source 2 is connected to the sliding base 33, the sliding base 33 can slide along the sliding slot 322, so that the corresponding collecting member 1 or the corresponding infrared light source 2 can be close to or far away from the silicon wafer 10, and specifically, the sliding slot 322 extends along the radial direction of the arc-shaped slot 321. Due to the structural arrangement, the angles and the positions between the collecting piece 1 and the silicon wafer 10 and between the infrared light source 2 and the silicon wafer 10 can be further conveniently adjusted, the positions and the angles of collecting and illumination can be adjusted conveniently, the imaging effect is guaranteed, and the detection result is guaranteed.
Specifically, in the process that the protrusion slides along the arc-shaped groove 321, α changes within 10 ° to 60 °, and the sliding groove 322 is always inclined downward toward the right side, so that the collecting member 1 or the infrared light source 2 can be close to or away from the silicon wafer 10 in the process that the sliding base 33 slides along the sliding groove 322.
In this embodiment, the first adjusting assembly includes a sliding base 33, and the rotating member 32 has a sliding slot 322. The second adjustment assembly does not provide the slide 33 and the runner 322. In other embodiments, the second adjusting assembly may also include a sliding base 33, and the rotating member 32 has a sliding slot 322. The first adjustment assembly does not provide the slide 33 and the runner 322. Alternatively, the second adjustment assembly may be identical in construction to the first adjustment assembly. That is, the second adjustment assembly and the first adjustment assembly each include a sliding seat 33, a sliding groove 322 is disposed on the rotation member 32, and the base 31 and the rotation member 32 are in a plate shape and are disposed in contact with each other, which is not limited herein.
Further, the silicon wafer detection device further comprises two moving assemblies, the two moving assemblies are detachably connected with the two adjusting assemblies 3 in a one-to-one correspondence mode, and the moving assemblies can drive the collecting assemblies 1 or the infrared light sources 2 to be close to or far away from the silicon wafer 10. Two removal subassembly one-to-one connect in two adjusting part 3, realize gathering 1 or infrared light source 2's rising or decline for can all realize adjusting the height of gathering 1 and infrared light source 2 through spout 322 and removal subassembly, increased the height range that gathers 1 and infrared light source 2 and can adjust, improved the practicality, in addition, can dismantle between removal subassembly and the adjusting part 3 and be connected, be convenient for according to the high adjustment range dismouting removal subassembly, further improved the practicality.
Specifically, the movable assembly comprises a lifting frame, a sliding rail, a movable plate and a driving piece, the lifting frame is provided with the vertically arranged sliding rail, namely the sliding rail is perpendicular to the conveying direction, the movable plate is in sliding fit with the sliding rail, the driving piece is connected to the movable plate, the driving piece can drive the movable plate to slide along the sliding rail, and the movable plate is connected to the base 31 of the adjusting assembly 3, so that the base 31 can slide along the sliding rail, and the ascending or descending of the collecting piece 1 or the infrared light source 2 is realized. In this embodiment, a cylinder or a linear motor and other structures may be further provided to drive the connecting plate to slide along the slide rail.
Further, for the moving assembly connected to the first adjusting assembly, the moving plate is connected to a side of the base 31 opposite to the rotating member 32. For the moving assembly connected to the second adjusting assembly, a connecting arm is connected between two side arms of the U-shaped structure of the second moving assembly, and the moving plate is connected to the connecting arm of the base 31.
Further, the silicon wafer inspection apparatus further includes a loading unit capable of picking up the silicon wafer 10 and supplying the silicon wafer 10 to the transfer unit. The feeding unit comprises a manipulator, and an adsorption part is arranged on the manipulator and can adsorb the silicon wafer 10. In particular, the suction member is a suction cup. The manipulator can drive the sucking disc to move to the magazine department of depositing silicon chip 10, drives the sucking disc again and removes to the left side of conveying unit, places silicon chip 10 at the left end of first conveying piece.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. A silicon wafer detection apparatus, comprising:
a conveying unit for conveying the silicon wafer (10) in a conveying direction;
a collecting member (1);
the acquisition part (1) and the infrared light source (2) are respectively arranged on two sides of the conveying unit, which are perpendicular to the conveying direction, and light rays emitted by the infrared light source (2) can pass through the silicon wafer (10) and then reach the acquisition end of the acquisition part (1);
adjusting part (3), be provided with two, two adjusting part (3) connect respectively in gather piece (1) with infrared light source (2), adjusting part (3) can be adjusted gather piece (1) or the angle of infrared light source (2).
2. The silicon wafer detection device according to claim 1, wherein the adjustment assembly (3) comprises a base (31) and a rotation member (32), the collection member (1) or the infrared light source (2) is connected to the rotation member (32), a rotation shaft is arranged on the rotation member (32), the rotation shaft is rotatably arranged on the base (31), an arc-shaped groove (321) is formed in the rotation member (32), the center of the arc-shaped groove (321) is located on the axis of the rotation shaft, a protrusion is arranged on one side of the base (31) facing the rotation member (32), at least part of the protrusion is located in the arc-shaped groove (321), and the protrusion can slide along the arc-shaped groove (321).
3. The silicon wafer detection device according to claim 2, wherein at least one of the adjustment assemblies (3) comprises a sliding base (33), the rotation member (32) is provided with a sliding slot (322), the sliding slot (322) extends along a radial direction of the arc-shaped slot (321), the corresponding collecting member (1) or the infrared light source (2) is connected to the sliding base (33), and the sliding base (33) can slide along the sliding slot (322) to enable the corresponding collecting member (1) or the infrared light source (2) to approach or depart from the transmission unit.
4. The silicon wafer detection device according to claim 1, further comprising two moving assemblies, wherein the two moving assemblies are detachably connected with the two adjusting assemblies (3) in a one-to-one correspondence manner, and the moving assemblies can drive the collecting member (1) or the infrared light source (2) to approach or leave the conveying unit.
5. The silicon wafer detection device according to claim 4, wherein the moving assembly comprises a slide rail, a moving plate and a driving member, the slide rail is arranged perpendicular to the conveying direction, the moving plate is in sliding fit with the slide rail, the driving member is connected to the moving plate, the driving member can drive the moving plate to slide along the slide rail, and the moving plate is connected to the adjusting assembly (3).
6. The silicon wafer detection device according to any one of claims 1 to 5, wherein an imaging light path between the collection member (1) and the silicon wafer (10) and a light source light path emitted by the infrared light source (2) form an included angle, and the imaging light path, the light source light path and the silicon wafer (10) can intersect at the same point.
7. The silicon wafer inspection device according to claim 6, wherein the light source light path emitted by the infrared light source (2) is arranged perpendicular to the conveying direction, and the imaging light path between the collecting member (1) and the silicon wafer (10) is arranged obliquely to the conveying direction; or the like, or, alternatively,
the light source light path emitted by the infrared light source (2) is inclined to the transmission direction, and the imaging light path between the acquisition piece (1) and the silicon wafer (10) is perpendicular to the transmission direction.
8. The silicon wafer inspection apparatus according to any one of claims 1 to 5, wherein the conveying unit comprises two conveying members (4) arranged at intervals along the conveying direction, the conveying members (4) can convey the silicon wafer (10) along the conveying direction, the silicon wafer (10) is disposed on a side of the conveying members (4) facing away from the infrared light source (2), an inspection space (41) is formed between the two conveying members (4), and light emitted from the infrared light source (2) can pass through the inspection space (41) to reach the silicon wafer (10).
9. The silicon wafer inspection device according to any one of claims 1 to 5, wherein the collection member (1) is a short wave infrared line camera; and/or the infrared light source (2) is a linear light source and can emit short-wave infrared light.
10. The silicon wafer inspection apparatus according to any one of claims 1 to 5, further comprising a loading unit capable of picking up the silicon wafer (10) and supplying the silicon wafer (10) to the transfer unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122046124.1U CN215812463U (en) | 2021-08-27 | 2021-08-27 | Silicon wafer detection device |
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|---|---|---|---|
| CN202122046124.1U CN215812463U (en) | 2021-08-27 | 2021-08-27 | Silicon wafer detection device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113758930A (en) * | 2021-08-27 | 2021-12-07 | 博众精工科技股份有限公司 | Silicon wafer detection device |
| CN117250230A (en) * | 2023-11-17 | 2023-12-19 | 天津港电力有限公司 | Photovoltaic module defect identification system based on infrared shooting |
-
2021
- 2021-08-27 CN CN202122046124.1U patent/CN215812463U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113758930A (en) * | 2021-08-27 | 2021-12-07 | 博众精工科技股份有限公司 | Silicon wafer detection device |
| CN117250230A (en) * | 2023-11-17 | 2023-12-19 | 天津港电力有限公司 | Photovoltaic module defect identification system based on infrared shooting |
| CN117250230B (en) * | 2023-11-17 | 2024-01-23 | 天津港电力有限公司 | Photovoltaic module defect identification system based on infrared shooting |
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