CN116964730A - 具有陶瓷电路载体、柔性电路板和温度传感器的功率模块 - Google Patents

具有陶瓷电路载体、柔性电路板和温度传感器的功率模块 Download PDF

Info

Publication number
CN116964730A
CN116964730A CN202280019802.XA CN202280019802A CN116964730A CN 116964730 A CN116964730 A CN 116964730A CN 202280019802 A CN202280019802 A CN 202280019802A CN 116964730 A CN116964730 A CN 116964730A
Authority
CN
China
Prior art keywords
circuit board
power module
temperature sensor
circuit carrier
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280019802.XA
Other languages
English (en)
Inventor
D·A·劳夫
T·巴尔苏科瓦
C·弗里德里希
T·扎恩
S·斯特雷切
F·赞德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of CN116964730A publication Critical patent/CN116964730A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385—Assembly of a plurality of insulating substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5387—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/118—Printed elements for providing electric connections to or between printed circuits specially for flexible printed circuits, e.g. using folded portions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/36—Assembling printed circuits with other printed circuits
    • H05K3/361—Assembling flexible printed circuits with other printed circuits
    • H05K3/363—Assembling flexible printed circuits with other printed circuits by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/04—Assemblies of printed circuits
    • H05K2201/041—Stacked PCBs, i.e. having neither an empty space nor mounted components in between
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10151—Sensor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本发明涉及一种功率模块、特别是用于逆变器的换向单元。功率模块具有尤其陶瓷构成的电路载体和至少一个或仅一个半导体开关半桥，半导体开关半桥具有与电路载体尤其材料配合地连接的两个半导体开关、特别是功率半导体开关。根据本发明，上述类型的功率模块具有柔性电路板、特别是FCB(FCB＝柔性电路板)，柔性电路板与电路载体尤其材料配合地连接。柔性电路板设置在半导体开关的区域中。功率模块具有温度传感器，温度传感器与柔性电路板材料配合地连接，并且被设计和设置用于穿过柔性电路板检测电路载体在半导体开关的区域中的温度，进而尤其间接地检测半导体开关的温度。

Description

具有陶瓷电路载体、柔性电路板和温度传感器的功率模块
技术领域
本发明涉及一种功率模块、特别是用于逆变器的换向单元。功率模块具有尤其陶瓷构成的电路载体和至少一个或仅一个半导体开关半桥，半导体开关半桥具有两个半导体开关、特别是功率半导体开关，其中半导体开关与电路载体尤其材料配合地连接。
发明内容
根据本发明，上述类型的功率模块具有(尤其与电路载体不同的)优选柔性的电路板、特别是FCB(FCB＝柔性电路板)，电路板与电路载体尤其材料配合地连接。柔性电路板设置在半导体开关的区域中。功率模块具有温度传感器，温度传感器与柔性电路板材料配合地连接，并且被设计和设置用于穿过柔性电路板检测电路载体在半导体开关的区域中的温度，进而尤其间接地检测半导体开关的温度。
有利地，可以借助于温度传感器以低成本的方式间接地检测半导体开关的温度。温度传感器优选地与柔性电路板焊接，特别是回流焊接。因此，柔性电路板可以有利地用作用于将温度传感器固定在电路载体上的固定机构。因此，由半导体开关产生的损耗热可以沿着电路载体的平坦延伸部、即横向地引导至电路载体的、设置有温度传感器的位置。温度传感器和电路载体的该位置将柔性电路板包围在彼此之间。
在一个优选的实施方式中，柔性电路板被设计用于：向半导体开关供应用于切换半导体开关的控制信号。因此，可以有利地借助于柔性电路板将控制信号输送给半导体开关，还可以将由温度传感器生成的、代表半导体开关温度的温度信号引导离开，并且更优选地输送给处理单元、尤其输送给用于半导体开关半桥的驱动器。
在一个优选的实施方式中，功率模块具有至少一个键合连接部，特别是键合带或键合线，其从柔性电路板引导至半导体开关，以操控半导体开关。因此，可以有利地形成从柔性电路板至半导体开关的电连接。
在一个优选的实施方式中，温度传感器与柔性电路板焊接，特别是回流焊接。因此，温度传感器可以有利地与其他电子构件、例如电阻、电容器或用于半导体开关的驱动器共同地焊接。
在另一实施方式中，温度传感器可以与柔性电路板粘贴。例如，包覆物、尤其将温度传感器与柔性电路板连接的粘合剂可以是导电粘合剂。
在另一实施方式中，可以借助于烧结剂将温度传感器与柔性电路板烧结。烧结剂例如可以是烧结膏，特别是银烧结膏。
在一个优选的实施方式中，柔性电路板在温度传感器的区域中具有至少一个导热通孔连接部。导热通孔连接部至少沿着电路板的厚度延伸的一部段形成在电路板中。因此，有利地，由半导体开关半桥的半导体开关产生的损耗热可以在电路载体、特别是电路载体的导电层中被传导至通孔连接部，并且可以在那里在通孔连接部的区域中传导穿过柔性电路板，从而到达温度传感器。
通孔连接部例如通过尤其电镀产生的导热的金属桥形成。
在一个优选的实施方式中，温度传感器是电阻传感器。电阻传感器优选地被设计为检测温度并根据检测到的温度改变其欧姆电阻，进而产生温度相关的温度信号。因此，可以有利地低成本地提供温度传感器。温度传感器例如是NTC传感器(NTC＝负温度系数)。有利地，随着温度升高，温度传感器可以具有更大的电导率进而更小的电阻，使得在预定阈值下流过温度传感器的电流可以代表不应被超过的温度阈值，并且在超过时可以产生报错信号。
在一个优选的实施方式中，电路载体是陶瓷的电路载体。陶瓷的电路载体优选具有电绝缘的陶瓷层(特别是氧化铝层或氮化硅)和至少一个与陶瓷层连接的(尤其共晶连接的)导电层，特别是重布线层，优选铜层。电路载体例如是AMB电路载体(AMB＝活性金属钎焊)、DCB电路载体(DCB＝直接铜接合)或IMS基板(IMS＝绝缘金属基板)。
因此，电路载体可以有利地具有良好的导热性和用于半导体开关的高载流性。半导体开关优选地与电路载体烧结或焊接。
在一个优选的实施方式中，电路载体具有导电层、特别是印制导线，导电层与柔性电路板材料配合地尤其借助于焊料剂、烧结剂或导电粘结剂连接。导电层被引导至半导体开关，使得从半导体开关至温度传感器形成的传递热阻小于在与其平行的陶瓷层中形成的传递热阻。导电层优选地在温度传感器和陶瓷层之间延伸。因此，温度传感器和陶瓷层将电路载体的导电层和柔性电路板包围在彼此之间。
有利地，由半导体开关产生的损耗热可以经由具有小的传递热阻的印制导线流至温度传感器。因此，陶瓷层可以形成至热沉的传递热阻，该热沉与电路载体导热连接。
在一个优选的实施方式中，功率模块具有与电路载体导热连接的热沉。电路载体优选地以背离半导体开关的一侧与热沉导热连接。为此，电路载体优选具有导电层，特别是背侧层，导电层与热沉材料配合地连接，优选地焊接。因此，有利地，由半导体开关产生的损耗热可以传导至热沉。由半导体开关产生的损耗热可以部分地以小的传递热阻沿导电层引导至温度传感器，并且在那里穿过柔性电路板到达温度传感器。
陶瓷电路载体的导电的重布线层优选地具有比电路载体的电绝缘陶瓷层更大的、与长度相关的导热率。因此，有利地，损耗热可以在电路载体表面处被引导至温度传感器。因此，可以在重布线层和与电路载体导热连接的热沉之间可以形成温差。
柔性电路板优选具有至少一个电绝缘层(特别是聚酰亚胺层、尼龙层、聚酯层、弹性体层或聚酯薄膜层)和至少一个导电层(特别是铜层)。柔性电路板优选地具有至少一个电绝缘层，电绝缘形成在与温度传感器的电端子连接的重布线层和用于与电路载体焊接的导电层之间。如此形成中间层的电绝缘层因此可以形成如下电绝缘层，该电绝缘层可以具有相对于在电路载体中引导的电压足够的击穿抗性。
柔性电路板优选地柔性或弹性地构成，使得电路板能够以直角或U形弯曲而不会断裂。柔性电路板优选地以不含强化纤维的方式被设计为柔性电路板。有利地，柔性电路板可以弹性地构成，使得柔性电路板可以与电路载体材料配合复合地跟随电路载体的热扩展。
柔性电路板的电绝缘层优选地比陶瓷电路载体的电绝缘层更薄地构成。
电路载体的电绝缘层优选具有0.2至1毫米之间、更优选0.3至0.5毫米之间的厚度。柔性电路板的电绝缘层优选具有10微米至100微米之间的厚度，更优选20微米至30微米之间的厚度。柔性电路板的厚度优选地具有100微米至500微米之间的厚度。软性电路板和电路载体之间的厚度比优选为1比5至1比10。
本发明还涉及一种用于检测功率半导体开关的温度的方法。在该方法中，由功率半导体开关产生的损耗热被导入与功率半导体开关材料配合地连接的陶瓷的电路载体中。导入的损耗热(特别是横向地)在基板中在导电层中从功率半导体开关被引走，其中导电层在功率半导体开关的区域中与电路载体的陶瓷层连接，并且导电层尤其是重布线层。损耗热继续在导电层中被引导至与导电层材料配合地连接的、尤其是柔性的电路板中。损耗热继续沿着电路板的厚度延伸被引导穿过柔性电路板直至与电路板焊接的温度传感器。因此，有利地，柔性电路板可以形成至导电层的电绝缘体。导电层优选为铜层或铝层。
本发明还涉及一种逆变器，特别是用于电动车辆或混合动力车辆的逆变器。该逆变器对于每一相具有至少一个上述类型的功率模块，并且被设计用于对电机通电以产生旋转磁场。因此，可以有利地低成本且可靠地监控逆变器的功率电子装置的温度。逆变器优选地被设计用于根据由温度传感器产生的温度信号来产生报错信号或者限制由逆变器产生的电流。
附图说明
下面根据附图和其他实施例来解释本发明。其他有利的实施变型形式从附图和从属权利要求中描述的特征的组合中得出。
图1示出功率模块的一个实施例，功率模块具有彼此焊接的陶瓷电路载体和柔性电路板，其中温度传感器焊接在柔性电路板上，温度传感器被设计和设置用于检测与电路载体连接的至少一个功率半导体的温度。
具体实施方式
图1示出功率模块1的一个实施例。功率模块1具有电路载体2。电路载体2具有电绝缘构成的陶瓷层3，特别是氧化铝层。电路载体2还具有导热且导电的后侧接触件4，特别是铜层。电路载体2以后侧接触件4借助于焊料剂22与热沉7导热地且材料配合地连接。
电路载体2还具有设置在陶瓷层3上的并且与陶瓷侧3特别是共晶连接的至少一个印制导线5，并且具有在该示例性实施例中与印制导线5电隔离的印制导线6。在所述实施例中，印制导线5和6被设计为导电层，特别是铜层，特别是厚铜层。
电路载体2例如是AMB基板、DCB基板或IMS基板。
在所述实施例中，功率模块1还具有至少一个功率半导体开关，功率半导体开关与电路载体2、特别是印制导线材料配合地连接，特别是焊接或者借助于烧结剂进行烧结。
功率模块1具有功率半导体开关8和功率半导体开关9，功率半导体开关分别借助于烧结剂23与导电层6或导电层5烧结。
在所述实施例中，功率半导体开关8和9一起形成半导体开关半桥。半导体开关半桥具有低侧半导体开关和高侧半导体开关。为此，功率半导体开关9形成低侧半导体开关，并且功率半导体开关8形成高侧半导体开关。
功率模块1还具有柔性电路板10。柔性电路板10具有至少一个电绝缘层20，特别是聚酰亚胺层或聚酰胺层或聚酯薄膜层。柔性电路板10还具有至少一个导电层，导电层特别地借助于层压与电绝缘层连接。在所述实施例中，柔性电路板10具有导电后侧层21，导电后侧层借助于焊料剂22或借助于导热粘合剂与电路载体2的导电层6焊接。柔性电路板10还具有至少两个其他的导电层17和18，其他的导电层设置在柔性电路板10的与后侧层21相反的一侧上并且与电绝缘层20尤其借助于层压连接。导电层17和18分别与温度传感器14连接、尤其焊接，温度传感器是功率模块1的组成部分。
在所述实施例中，温度传感器14设置在在功率半导体开关8和9之间延伸的连接轴线上，使得温度传感器14可以接收由功率半导体开关8和9产生的损耗热。
在所述实施例中，柔性电路板10被设计用于向功率半导体开关8和9输送控制信号。为此，功率半导体开关8和9分别借助于至少一个键合线与柔性电路板10电连接。示例性地表示将柔性电路板10与功率半导体开关9连接的键合线12和将柔性电路板10与功率半导体开关8连接的键合线13。
在所述实施例中，柔性电路板10邻近功率半导体开关8和9延伸，特别是置于功率半导体开关两侧。在所述实施例中，柔性电路板10和功率半导体开关8和9在电路载体2的同一平面中延伸。在所述实施例中，功率半导体开关8和9彼此间隔开，并且将始于柔性电路板10的和模制到柔性电路板10的舌片11围住在彼此之间。在所述实施例中，温度传感器14设置在柔性电路板10的舌片11上。在所述实施例中，舌片11和温度传感器14都设置在在功率半导体开关8和9之间延伸的连接轴线上。
柔性电路板10在温度传感器14的区域中具有至少一个导热的通孔连接部，其下文中也称为通孔，通孔连接部沿着电绝缘层20的高度延伸在温度传感器14和导电层21之间延伸至其他的电绝缘层28。以该方式，电绝缘层20可以通过导热通孔穿透，以更好地导热，其中导热通孔例如分别通过金属柱体、特别是铜柱体形成，其中导电层28和29具有导热和/或散热的功能。
电绝缘层20具有在通孔19和导电后侧层21之间延伸的层部分，使得后侧层21与通孔19电绝缘进而电气隔离。通孔在沿着其厚度延伸部27的部段上穿透电绝缘层20。电绝缘层具有例如在25微米与100微米之间的层厚度。例如，导电层分别具有15微米至30微米之间的层厚度。电绝缘层20可以由多个彼此上下叠置的电绝缘的单层形成。
通孔19分别与导电层17或18之一连接，该导电层在所述实施例中分别借助于焊料剂22与温度传感器14的端子15或16焊接，或者借助于导电的粘合剂粘贴。
因此，温度传感器14借助于导热通孔19充分与电路载体2的导电层6连接，使得始于功率半导体开关8的损耗热、特别是损耗热部分流26可以经由电路载体2的导电层6传导至柔性电路板10的舌片11，并且在那里焊料剂层22可以以穿越导电后侧层21和电绝缘聚酰亚胺层20以及进一步地穿越通孔连接部19的方式到达直至柔性电路板10的电端子接触件，该电端子接触件分别通过导电层17和18形成。
由功率半导体开关9产生的损耗热可以部分地、尤其以损耗热部分流25的形式经由电路载体2的导电层，并且进一步以跨接在导电层5和导电层6之间的间隙的方式，经由电绝缘的陶瓷层3流动至导电层6，以便从那里(如损耗热部分流26那样)经由柔性电路板10到达温度传感器14。
在所述实施例中，热沉7具有多个流体通道，多个流体通道中的一个流体通道24被示例性地示出。因此，热沉7可以具有不同于导电层5和/或导电层6的温度。因此，设置在功率半导体开关8、9附近的温度传感器14能够充分精确地检测功率半导体开关8、9的温度。
在所述实施例中，温度传感器14通过温度相关的电阻、特别是NTC电阻形成。
不同于图1所示，在另一实施方式中，功率模块1可以具有导电层，功率半导体开关8和9共同地设置在该导电层上。导电层5和6因此形成共同的、连续连接的导电层。功率半导体开关8和9因此例如可以彼此并行地、并且电同步相互工作地被操控。
然后，损耗热部分流25不再如图1所示的那样以跨接间隙的方式部分地流入电绝缘的陶瓷层3中，而是如损耗热部分流26那样连续地在在所述实施方式中连续构成的导电层中流动。

Claims (10)

1.一种功率模块(1)，特别是用于逆变器的换向单元，所述功率模块具有尤其陶瓷构成的电路载体(2)和至少一个半导体开关半桥(8，9)，所述半导体开关半桥具有与所述电路载体(2)连接的两个半导体开关，
其特征在于，
柔性电路板(10)与所述电路载体(2)尤其材料配合地连接，其中所述柔性电路板(10)设置在所述半导体开关(8，9)的区域中，并且所述功率模块(1)具有温度传感器(14)，所述温度传感器与所述电路板(10)材料配合地连接并且被设计和设置用于穿过所述柔性电路板(10)检测所述电路载体(2)在所述半导体开关(8，9)的区域中的温度。
2.根据权利要求1所述的功率模块(1)，
其特征在于，
所述柔性电路板(10)被设计用于：向所述半导体开关(8，9)供应用于切换所述半导体开关(8，9)的控制信号。
3.根据权利要求1或2所述的功率模块(1)，
其特征在于，
所述温度传感器(14)与所述柔性电路板(10)焊接。
4.根据前述权利要求中任一项所述的功率模块(1)，
其特征在于，
所述柔性电路板(10)在所述温度传感器(14)的区域中具有至少一个导热通孔连接部(19)，所述导热通孔连接部至少沿着所述电路板的厚度延伸(27)的一部段形成在所述电路板(10)中。
5.根据前述权利要求中任一项所述的功率模块(1)，
其特征在于，
所述温度传感器(14)是电阻传感器。
6.根据前述权利要求中任一项所述的功率模块(1)，
其特征在于，
所述温度传感器(14)与所述柔性电路板(10)焊接。
7.根据前述权利要求中任一项所述的功率模块(1)，
其特征在于，
所述电路载体(2)是陶瓷的电路载体，所述陶瓷的电路载体具有电绝缘的陶瓷层(3)和与所述陶瓷层(3)连接的至少一个导电层(5，6)、特别是重布线层。
8.根据前述权利要求中任一项所述的功率模块(1)，
其特征在于，
所述电路载体(2)具有与所述柔性电路板(10)材料配合地连接的导电层(5，6)和被引导至所述半导体开关(8，9)的导电层(5，6)，使得从所述半导体开关(8，9)至所述温度传感器(14)形成的传递热阻小于在与其平行的所述陶瓷层(3)中形成的传递热阻。
9.根据前述权利要求中任一项所述的功率模块(1)，
其特征在于，
所述功率模块(1)具有与所述电路载体(2)导热连接的热沉(7)。
10.一种用于检测功率半导体开关(8，9)的温度的方法，
其中由所述功率半导体开关(8，9)产生的损耗热被导入与所述功率半导体开关(8，9)材料配合地连接的陶瓷的电路载体(2)中，并且特别是横向地在基板中导入的所述损耗热(25，26)在导电层(5，6)中从所述功率半导体开关尤其正横向地被引走，并且在所述导电层中被引导至与所述导电层(5，6)材料配合地连接的、尤其是柔性的电路板(10)中，并且沿着所述电路板的厚度延伸(27)被引导穿过所述柔性的电路板(10)直至与所述电路板(10)焊接的温度传感器(14)，其中所述导电层在所述功率半导体开关(8，9)的区域中与所述电路载体的陶瓷层(3)连接。
CN202280019802.XA 2021-03-08 2022-03-03 具有陶瓷电路载体、柔性电路板和温度传感器的功率模块 Pending CN116964730A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102021202197.2A DE102021202197A1 (de) 2021-03-08 2021-03-08 Leistungsmodul mit einem keramischen Schaltungsträger, einer flexiblen Leiterplatte und einem Temperatursensor
DE102021202197.2 2021-03-08
PCT/EP2022/055358 WO2022189241A1 (de) 2021-03-08 2022-03-03 Leistungsmodul mit einem keramischen schaltungsträger, einer flexiblen leiterplatte und einem temperatursensor

Publications (1)

Publication Number Publication Date
CN116964730A true CN116964730A (zh) 2023-10-27

Family

ID=80953266

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280019802.XA Pending CN116964730A (zh) 2021-03-08 2022-03-03 具有陶瓷电路载体、柔性电路板和温度传感器的功率模块

Country Status (4)

Country Link
US (1) US20240164014A1 (zh)
CN (1) CN116964730A (zh)
DE (1) DE102021202197A1 (zh)
WO (1) WO2022189241A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022200168A1 (de) 2022-01-10 2023-03-09 Magna powertrain gmbh & co kg Power Modul Vorrichtung
DE102022210147A1 (de) 2022-06-22 2023-12-28 Robert Bosch Gesellschaft mit beschränkter Haftung Leistungsmodul und Verfahren zur Herstellung eines Leistungsmoduls
EP4340014A1 (de) * 2022-09-15 2024-03-20 Siemens Aktiengesellschaft Anordnung mit mindestens einem passiven bauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7327024B2 (en) * 2004-11-24 2008-02-05 General Electric Company Power module, and phase leg assembly
DE102013213448B4 (de) * 2013-07-09 2021-12-09 Siemens Aktiengesellschaft Elektronikbaugruppe mit Leistungshalbleiter
JP6897056B2 (ja) 2016-10-20 2021-06-30 富士電機株式会社 半導体装置及び半導体装置製造方法
DE102017118490A1 (de) * 2017-08-14 2019-02-14 Tdk Electronics Ag LED Modul

Also Published As

Publication number Publication date
WO2022189241A1 (de) 2022-09-15
DE102021202197A1 (de) 2022-09-08
US20240164014A1 (en) 2024-05-16

Similar Documents

Publication Publication Date Title
CN116964730A (zh) 具有陶瓷电路载体、柔性电路板和温度传感器的功率模块
US9040338B2 (en) Power semiconductor module with method for manufacturing a sintered power semiconductor module
KR101319208B1 (ko) 전자 부품용 접속 소자
US11652021B2 (en) Power module having packaged power semiconductors for the controllable supply of electric power to a load
CN110137160B (zh) 半导体器件
CN110753996B (zh) 功率电子设备模块
JPWO2018211735A1 (ja) 半導体装置
JP2001507522A (ja) 電子制御装置
CN106252332B (zh) 热敏电阻搭载装置及热敏电阻部件
CN110582847B (zh) 半导体模块
CN112928562A (zh) 电子电路单元
US10290568B2 (en) Power module for an electric motor
CN107924892B (zh) 电路载体、包括电路载体的功率电子结构
CN113692697A (zh) 电子电路单元
CN109844939A (zh) 功率模块
CN109716877B (zh) 电子组件
US20120199989A1 (en) Circuit arrangement and manufacturing method thereof
US8502484B2 (en) Power stage for driving an electric machine
CN115117011A (zh) 功率半导体模块和生产功率半导体模块的方法
CN117546030A (zh) 用于逆变器的换向单元
CN110168709B (zh) 具有用于连接半导体芯片的第一和第二连接元件的半导体模块及制造方法
WO2023248729A1 (ja) 抵抗体の実装構造
CN112201642A (zh) 包括连接介质和功率半导体部件的功率电子开关装置
CN115799208A (zh) 功率半导体模块
CN116250379A (zh) 电路板和电路组件

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination