CN116918072A - 场效应晶体管及其制造方法 - Google Patents

场效应晶体管及其制造方法 Download PDF

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Publication number
CN116918072A
CN116918072A CN202180094906.2A CN202180094906A CN116918072A CN 116918072 A CN116918072 A CN 116918072A CN 202180094906 A CN202180094906 A CN 202180094906A CN 116918072 A CN116918072 A CN 116918072A
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CN
China
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layer
trench
lower layer
type deep
Prior art date
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Pending
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CN202180094906.2A
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English (en)
Chinese (zh)
Inventor
高谷秀史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
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Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN116918072A publication Critical patent/CN116918072A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/058—Forming charge compensation regions, e.g. superjunctions by using trenches, e.g. implanting into sidewalls of trenches or refilling trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202180094906.2A 2021-03-11 2021-11-05 场效应晶体管及其制造方法 Pending CN116918072A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2021039221 2021-03-11
JP2021-039221 2021-03-11
JP2021069123 2021-04-15
JP2021-069123 2021-04-15
JP2021103917A JP7537377B2 (ja) 2021-03-11 2021-06-23 電界効果トランジスタとその製造方法
JP2021-103917 2021-06-23
PCT/JP2021/040836 WO2022190456A1 (ja) 2021-03-11 2021-11-05 電界効果トランジスタとその製造方法

Publications (1)

Publication Number Publication Date
CN116918072A true CN116918072A (zh) 2023-10-20

Family

ID=83227816

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180094906.2A Pending CN116918072A (zh) 2021-03-11 2021-11-05 场效应晶体管及其制造方法

Country Status (5)

Country Link
US (1) US20230387194A1 (https=)
EP (2) EP4525583A3 (https=)
JP (3) JP7537377B2 (https=)
CN (1) CN116918072A (https=)
WO (1) WO2022190456A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115911093A (zh) * 2022-11-11 2023-04-04 天狼芯半导体(成都)有限公司 碳化硅mosfet的结构、制造方法及电子设备

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7830929B2 (ja) * 2021-06-15 2026-03-17 富士電機株式会社 半導体装置
JP7717010B2 (ja) * 2022-03-08 2025-08-01 株式会社デンソー 半導体装置
CN120604636A (zh) * 2023-02-24 2025-09-05 株式会社电装 场效应晶体管的制造方法
JP2024135369A (ja) * 2023-03-22 2024-10-04 株式会社東芝 半導体装置
WO2025084070A1 (ja) * 2023-10-16 2025-04-24 ローム株式会社 半導体装置
KR20250093007A (ko) * 2023-12-15 2025-06-24 주식회사 엘엑스세미콘 전력반도체 소자 및 이를 포함하는 전력변환 장치
WO2025183975A1 (en) * 2024-03-01 2025-09-04 Semiconductor Components Industries, Llc Electronic device including a power transistor including a buried shield and a gap region and a process of making the same
WO2025192705A1 (ja) * 2024-03-14 2025-09-18 株式会社デンソー 半導体装置およびその製造方法
KR20250139672A (ko) * 2024-03-15 2025-09-23 현대모비스 주식회사 전력 반도체 장치
WO2025258666A1 (ja) * 2024-06-13 2025-12-18 株式会社デンソー 半導体装置

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JP4793390B2 (ja) 2008-02-13 2011-10-12 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP4640436B2 (ja) * 2008-04-14 2011-03-02 株式会社デンソー 炭化珪素半導体装置の製造方法
JP5396953B2 (ja) * 2009-03-19 2014-01-22 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5747447B2 (ja) * 2010-06-01 2015-07-15 日立化成株式会社 ドナー元素拡散機能を有する電極形成用ペースト組成物、太陽電池セル、及び太陽電池セルの製造方法
JP5136674B2 (ja) * 2010-07-12 2013-02-06 株式会社デンソー 半導体装置およびその製造方法
JP2012169384A (ja) * 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP5728992B2 (ja) * 2011-02-11 2015-06-03 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6111673B2 (ja) * 2012-07-25 2017-04-12 住友電気工業株式会社 炭化珪素半導体装置
JP2016025177A (ja) * 2014-07-18 2016-02-08 トヨタ自動車株式会社 スイッチング素子
JP6064977B2 (ja) * 2014-11-06 2017-01-25 三菱電機株式会社 炭化珪素半導体装置
US10157986B2 (en) * 2015-03-30 2018-12-18 Mitsubishi Electric Corporation Silicon carbide semiconductor device and method for manufacturing same
US10347724B2 (en) * 2015-12-07 2019-07-09 Mitsubishi Electric Corporation Silicon carbide semiconductor device
JP6880669B2 (ja) * 2016-11-16 2021-06-02 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2018113421A (ja) * 2017-01-13 2018-07-19 トヨタ自動車株式会社 半導体装置の製造方法
JP2019102556A (ja) * 2017-11-29 2019-06-24 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7056390B2 (ja) * 2018-06-07 2022-04-19 株式会社豊田中央研究所 窒化物半導体装置の製造方法
JP7206919B2 (ja) * 2019-01-07 2023-01-18 株式会社デンソー 半導体装置
JP7263178B2 (ja) * 2019-08-02 2023-04-24 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115911093A (zh) * 2022-11-11 2023-04-04 天狼芯半导体(成都)有限公司 碳化硅mosfet的结构、制造方法及电子设备

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Publication number Publication date
EP4525583A3 (en) 2025-06-25
JP2025168586A (ja) 2025-11-07
EP4307382A1 (en) 2024-01-17
WO2022190456A1 (ja) 2022-09-15
EP4307382A4 (en) 2024-10-23
JP2022140217A (ja) 2022-09-26
JP7537377B2 (ja) 2024-08-21
JP7750347B2 (ja) 2025-10-07
EP4525583A2 (en) 2025-03-19
US20230387194A1 (en) 2023-11-30
JP2024138119A (ja) 2024-10-07

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