CN116884923A - Cover plate packaging structure and preparation method thereof - Google Patents
Cover plate packaging structure and preparation method thereof Download PDFInfo
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- CN116884923A CN116884923A CN202311148347.6A CN202311148347A CN116884923A CN 116884923 A CN116884923 A CN 116884923A CN 202311148347 A CN202311148347 A CN 202311148347A CN 116884923 A CN116884923 A CN 116884923A
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- cover plate
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 34
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229910000679 solder Inorganic materials 0.000 claims abstract description 90
- 239000000463 material Substances 0.000 claims abstract description 56
- 238000003466 welding Methods 0.000 claims abstract description 47
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000005476 soldering Methods 0.000 claims abstract description 34
- 238000001465 metallisation Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 238000004093 laser heating Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 122
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 80
- 238000007747 plating Methods 0.000 claims description 58
- 229910052759 nickel Inorganic materials 0.000 claims description 40
- 239000010931 gold Substances 0.000 claims description 30
- 229910052737 gold Inorganic materials 0.000 claims description 29
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 23
- 238000007789 sealing Methods 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 3
- 229910000833 kovar Inorganic materials 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- 229910002056 binary alloy Inorganic materials 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims 2
- 238000004891 communication Methods 0.000 claims 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims 1
- 238000003892 spreading Methods 0.000 abstract description 6
- 230000007480 spreading Effects 0.000 abstract description 6
- 230000008569 process Effects 0.000 description 14
- 239000004005 microsphere Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- -1 ceramics Chemical class 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- BKDWYKUNIUAQHT-UHFFFAOYSA-N gold nickel Chemical compound [Ni][Au][Ni][Au] BKDWYKUNIUAQHT-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention discloses a cover plate packaging structure and a preparation method thereof, wherein a substrate material is subjected to metallization treatment, and a metallization treatment layer is formed on the surface of the substrate material; grooving the metallized substrate material to form a solder resist groove, wherein a welding part is arranged between the solder resist groove and the edge of the substrate material; coating gold-tin soldering paste on the welding part; laser heating is carried out on the welding part to form a gold-tin solder layer; and cleaning the surface of the cover plate packaging structure. The solder-resisting groove limits the spreading range of the gold-tin solder in a molten state, so that the molten solder cannot flow into the solder-resisting groove, and the situations of airtight failure, short circuit, insufficient local solder quantity and the like caused by local excessive flow of the molten solder can be prevented.
Description
Technical Field
The invention relates to the technical field of electronic packaging, in particular to a cover plate packaging structure and a preparation method thereof.
Background
With advances in microelectronic packaging technology, components have evolved toward miniaturization, high performance, and high reliability. After the assembly and the debugging of the high-reliability electronic components are qualified, the sealing treatment is needed, and the air leakage rate of the shell after the sealing meets the air tightness index of the GJB2440A-2006 standard, so that the influence of external water vapor, impurities, harmful gases and other pollutants on the internal circuit of the shell can be reduced or prevented, the internal circuit is ensured to work in a stable environment, and the reliability of the electronic components is improved.
The current capping process for miniaturized ceramic or metal hermetic enclosures is a relatively tricky problem in the industry. If parallel seam welding is adopted, the sealing ring of the metal material is additionally welded at the sealing part of the ceramic shell, so that the implementation of the welding process and the welding reliability can be ensured, otherwise, the sealing cover cannot be directly carried out on the ceramic shell, the process difficulty and the cost of the packaging shell are increased intangibly, the qualified rate of products is reduced, and the cost of components is increased. In addition, other conventional capping processes such as energy storage welding, laser welding, soldering and the like are limited in process implementation conditions, are not suitable for mass production, or the capping reliability cannot meet the technical index requirements.
The gold-tin soldering sealing cover is an ideal technology for solving the sealing cover of the airtight electronic component at present, and when the airtight packaging of the integrated circuit is carried out, the sizes of the cavity, the solder and the cover plate are smaller, and the island-shaped solder is required according to different structures. For the process, the common practice in the industry is to select independent solder and an independent cover plate, then assemble and braze, but the process is complex in operation, high in fixture design and processing difficulty, easy to cause dislocation of the cover plate, low in efficiency and the like. The solder is typically a formed tab, which is difficult to make very small in terms of its processing dimensions due to its dimensions, and the thickness, wall width, etc. of the tab have a processing lower limit. Meanwhile, when the solder package is reflowed, the solder is easy to flow, so that the air tightness is affected, and the potential risk is brought to the performance of the device.
Disclosure of Invention
The invention aims to overcome the defects of high processing difficulty of soldering lugs and easy flowing of solder in the existing gold-tin soldering sealing cover technology, and provides a cover plate packaging structure and a preparation method thereof.
In order to solve the technical problems, the invention adopts the following technical scheme:
the invention provides a cover plate packaging structure, which comprises a base material, wherein the base material is in sealing connection with a base, packaging of components is realized, a metallization layer is attached to the surface of the base material, the metallization layer comprises a nickel plating layer and a gold plating layer, and the gold plating layer is arranged on the outer side of the nickel plating layer. The metallization layer on the side surface of the substrate material and the substrate in sealing connection is provided with a solder resist groove, the solder resist groove extends downwards from the upper surface of the gold plating layer to the nickel plating layer and exposes the nickel plating layer, the metallization layer is divided into an inner packaging part and an outer welding part by the solder resist groove, and the welding part is provided with a gold-tin solder layer formed by solidifying paste gold-tin solder.
The working principle of the invention is as follows: the substrate material is a cover plate for packaging electronic components, and the periphery of the substrate material is coated with a metallization layer, and the metallization layer can provide a good welding interface, realize metallurgical bonding with solder and ensure air tightness. Nickel has good wetting and bonding effects with solder, so nickel is commonly used in industry as a main welding layer, and the nickel layer can inhibit corrosion, however, on non-metals such as ceramics, the bonding strength of nickel is not high, and other active metals can be added as pretreatment. Nickel is easily oxidized in the air, so that a gold plating layer is arranged on the outer side of the nickel plating layer and used for protecting the nickel plating layer, welding is facilitated, and a clean particle-free surface is ensured. The metallized treatment layer is provided with a solder resist groove, and the solder resist groove can be a straight line groove or an annular groove which are mutually perpendicular. The nickel plating layer is opposite to the exposed part of the solder resist groove to form an oxide layer, and in the welding process, the oxide layer can limit the spreading range of the solder resist groove, which is supposed to be in a molten state, of the solder. The solder resist groove divides the metallization layer into an inner packaging part and an outer welding part, and a Jin Xihan material layer arranged on the welding part is formed by solidifying gold-tin soldering paste. The gold-tin paste includes solder microspheres for soldering, and a flux or other organic paste mixed with the solder microspheres, which can be removed by an organic solvent in a subsequent cleaning. In the spot coating (or other coating modes), the solder microspheres are matched with soldering flux or other organic paste, so that the precise positioning of the soldering paste can be realized. The selectable scale range of the solder microsphere is larger than that of a traditional formed soldering lug, and fine processing under small size can be realized. The solder resist groove extends downwards from the upper surface of the metallization layer, and when the Jin Xihan material layers are welded, the solder resist groove limits the spreading range of the gold-tin solder in a molten state, so that the molten solder cannot flow to the inner side of the solder resist groove, and the solder is gathered at a welding part. Because the flowing range of the solder is limited, under the condition of determining the volume of the solder, the solder-resisting groove can prevent the molten solder from flowing excessively locally, and the situations of air tightness failure, short circuit, insufficient local solder amount and the like can be prevented.
Further, the width of the solder resist groove is 15-50 mu m, and the limiting effect of the metallization treatment layer on the solder spreading can be ensured to the maximum under the condition that the allowable current value of the plating layer is not influenced; if the width of the solder resist groove is larger than 70 μm, the processing is not easy to obtain, especially when the solder resist groove is formed by laser etching, and the path width of a single laser sweep exceeds 70 μm, the required energy is large, the working current is high, and other metallized layers are easily damaged, and if the laser processing is performed for a plurality of times, the processing is complicated and the processing efficiency is low.
Further, the Jin Xihan material layer is binary alloy composed of gold and tin, wherein the mass fraction of the gold is 70% -80%.
Further, the Jin Xihan layer is Au80Sn20. The Au80Sn20 which is the alloy component of the gold and the tin is a eutectic point and can be instantaneously melted at 280 ℃. By devising the composition of the gold-tin solder, melting at different temperatures can be achieved.
Further, the metallization treatment layer is of a single-layer structure or a multi-layer laminated structure, the total thickness of the nickel plating layer is 1.3-11.43 mu m, and the total thickness of the gold plating layer is 0.8-5.7 mu m. The multi-layered structure is a preferred solution, because the multi-layered nickel-gold layers are mainly used for guaranteeing special salt spray requirements, such as long-time salt spray, and the like, and meanwhile, the multi-layered nickel-gold layers can also reduce the influence of local pores caused by an electroplating process.
Further, the substrate material is any one of kovar alloy, fe-Ni constant expansion alloy, mo-Cu, W-Cu, ceramic and silicon nitride. Metallic materials and partially nonmetallic materials such as ceramics and silicon nitride are preferable airtight materials, and these materials are preferable in view of electromagnetic influence, thermal expansion coefficient matching, material strength, and the like. Wherein, ceramic is used as a nonmetallic material, has lower cost compared with other metallic materials, and is convenient to obtain.
The invention also provides a preparation method of the cover plate packaging structure, which is used for preparing the cover plate packaging structure of any one of the above steps, and comprises the following steps:
step S1, carrying out metallization treatment on a substrate material, and sequentially electroplating on the surface of the substrate material to form a metallization treatment layer, wherein the metallization treatment layer comprises a gold plating layer plated on the outer side and a nickel plating layer plated on the inner side;
s2, grooving the metallized substrate material to form a solder resist groove, wherein the solder resist groove extends downwards from the upper surface of the gold plating layer to the nickel plating layer and exposes the nickel plating layer, and a welding part is arranged between the solder resist groove and the edge of the upper surface of the substrate material;
step S3, coating gold-tin soldering paste on the welding part formed in the step S2, wherein the height of the gold-tin soldering paste is 0.05-0.1mm;
s4, carrying out laser heating on the welding part to realize solidification of gold-tin soldering paste in the welding part, and forming a gold-tin soldering material layer;
and S5, cleaning the surface of the cover plate packaging structure manufactured in the step S4.
Further, in step S2, the grooving mode is laser grooving or wet etching.
Further, in step S3, the coating mode is any one of spraying, spot coating or printing.
In step S5, the solvent used for cleaning the surface of the lid package structure is any one of absolute ethyl alcohol, isopropyl alcohol, and trichloroethylene.
The beneficial effects of the invention are as follows:
1. the solder-resisting groove limits the spreading range of the gold-tin solder in a molten state, so that the molten solder cannot be wetted on the oxidized nickel layer, and further the molten solder is limited to spread outwards from a welding spot;
2. the Au80Sn20 alloy component is a eutectic point and can be instantaneously melted at 280 ℃, and the Jin Xihan material layer comprises the following components: the mass fraction of Au is 70-80%, and the melting at different temperatures can be realized by devising the components of the gold-tin solder;
3. the bump and line segment patterns of the cover plate packaging structure can be conveniently realized by utilizing the editability of the laser process, and the die is free from being opened, so that the production cost is reduced.
Drawings
FIG. 1 is a schematic diagram of a cover plate package structure;
FIG. 2 is a cross-sectional view taken at A-A of FIG. 1;
FIG. 3 is a schematic diagram illustrating an internal structure of a cover package structure according to a second embodiment;
fig. 4 is a flowchart of a method for manufacturing a cover plate package structure.
In the accompanying drawings:
1-a base material; 2-metallizing the treatment layer; 201-nickel plating; 202-gold plating; 3-a solder mask groove; 4-Jin Xihan layers.
Detailed Description
The invention is further described below in connection with the following detailed description. Wherein the drawings are for illustrative purposes only and are not to be construed as limiting the present patent; for the purpose of better illustrating the embodiments, certain elements of the drawings may be omitted, enlarged or reduced and do not represent the actual product dimensions; it will be appreciated by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The same or similar reference numbers in the drawings of embodiments of the invention correspond to the same or similar components; in the description of the present invention, it should be understood that, if there is an azimuth or positional relationship indicated by terms such as "front", "rear", "left", "right", etc., based on the azimuth or positional relationship shown in the drawings, it is only for convenience of describing the present invention and simplifying the description, but it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be constructed and operated in a specific azimuth, and thus terms describing the positional relationship in the drawings are merely illustrative and should not be construed as limitations of the present patent, and specific meanings of the terms described above may be understood by those skilled in the art according to specific circumstances. Furthermore, descriptions such as those referred to as "first," "second," and the like, are provided for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implying an order of magnitude of the indicated technical features in the present disclosure. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature.
Embodiment one:
referring to fig. 1 or 2, the present embodiment provides a cover plate packaging structure, which includes a base material 1 for packaging electronic components, wherein a metallization layer 2 is coated on the periphery of the base material 1, and the metallization layer 2 can provide a good welding interface, and can realize metallurgical bonding with solder to ensure air tightness. The metallization layer 2 at least comprises a nickel plating layer 201 and a gold plating layer 202, and other plating layers can be added according to actual requirements. The gold plating layer 202 is disposed outside the nickel plating layer 201, and the gold plating layer 202 protects the nickel plating layer 201 from oxidation. In order to overcome the short circuit or insufficient local solder quantity caused by solder flow, the upper surface of the metallization layer 2 is provided with a solder-resisting groove 3, the solder-resisting groove 3 divides the metallization layer 2 into an inner packaging part and an outer welding part, and the welding part is provided with a Jin Xihan layer 4 formed by solidifying paste gold-tin solder. The solder resist groove 3 has a rectangular shape, and the solder resist groove 3 extends downward from the upper surface of the gold plating layer 202 to the nickel plating layer 201 and exposes the nickel plating layer 201. The Jin Xihan material layer 4 is formed by solidifying gold-tin solder paste, and when the Jin Xihan material layer 4 is welded, the solder-resisting groove 3 limits the spreading range of the gold-tin solder in a molten state, so that the molten solder cannot flow to the inner side of the solder-resisting groove 3, and the solder is gathered at a welding part. The flow range of the solder is limited, so that under the condition of determining the volume of the solder, the solder-resisting groove 3 can prevent the molten solder from flowing excessively locally, short circuit, insufficient local solder quantity and the like.
In addition, the embodiment also provides a preparation method of the cover plate packaging structure, which is used for preparing the cover plate packaging structure. Referring to fig. 4, the preparation method includes the steps of:
step S1, 4J29 alloy (also called kovar alloy) is selected as a material of a cover plate packaging structure substrate material 1, and a 4J29 alloy plate is processed and molded to obtain a molded 4J29 plate with the size of 3 multiplied by 0.25mm (length multiplied by width multiplied by height) as the substrate material 1; the method comprises the steps of carrying out metallization treatment on a substrate 1, and sequentially electroplating nickel and gold on the surface of the substrate 1 by using a double-layer electroplating process to form a metallization treatment layer 2, wherein the metallization treatment layer 2 comprises a nickel plating layer 201 and a gold plating layer 202, the thickness of the nickel plating layer 201 is 1.3 mu m, and the thickness of the gold plating layer 202 is 0.8 mu m;
step S2, carrying out laser grooving on the metallized substrate material 1 by using a laser ruling machine, and etching the metallized layer 2 by using laser to form a solder mask groove 3, wherein the depth of the solder mask groove 3 is 1.3 mu m (the gold plating layer 202 at the position where the solder mask groove 3 is arranged is removed), the width is 20 mu m, the solder mask groove 3 is a centered square pattern, the distance from the edge of the substrate material 1 is 0.3mm, and a welding part is arranged between the solder mask groove 3 and the edge of the upper surface of the substrate material 1;
step S3, coating gold-tin soldering paste on the welding part formed in the step S2, wherein the gold-tin soldering paste with the particle size of 5-15 mu m is used, the coating process is utilized, the width of the area of the coated gold-tin soldering paste is 0.2mm, and the height of the area of the coated gold-tin soldering paste is 0.05mm;
s4, carrying out local laser heating on the welding part by utilizing a laser welding machine to realize solidification of gold-tin soldering paste in the welding part, so as to form a gold-tin soldering material layer 4;
and S5, cleaning the surface of the cover plate packaging structure manufactured in the step S4, wherein the used surface cleaning agent is absolute ethyl alcohol.
Embodiment two:
referring to fig. 1, 3 or 4, the present embodiment provides another method for manufacturing a cover plate package structure, which may manufacture one of the cover plate package structures according to the present invention, and the method specifically includes the following steps:
step S1, 4J42 alloy (also called Fe-Ni constant expansion alloy) is selected as a base material 1 of a cover plate packaging structure, 4J42 plates are processed and molded to obtain 4J42 plates with the size of 10 multiplied by 0.25mm (length multiplied by width multiplied by height), the molded 4J42 plates are subjected to metallization treatment, four layers of nickel-gold-nickel-gold electroplating are used, the thickness of a first nickel plating layer (bottom layer) is 1.7 mu m, and the total thickness of a nickel plating layer 201 is 11.43 mu m; the second gold-plated layer (surface layer) has a thickness of at least 0.5 μm and the gold-plated layer 202 has a total thickness of 5.7 μm;
step S2, grooving the top surface of the metallized substrate material 1 by using a laser ruling machine to form a solder mask groove 3, wherein in order to remove the second gold plating layer in the solder mask groove 3, the grooving depth is about 9.8 mu m, the grooving width is 50 mu m, the solder mask groove 3 is a centered square pattern, the distance between the solder mask groove 3 and the edge of the upper surface of the substrate material 1 is 1mm, and a welding part is arranged between the solder mask groove 3 and the edge of the upper surface of the substrate material 1;
s3, coating a welding part with gold-tin soldering paste with the particle size of 20-38 mu m by using a dispensing process, wherein the width of the gold-tin soldering paste after coating is 0.6mm and the height of the gold-tin soldering paste is 0.075mm;
step S4, locally heating the welding part by utilizing a laser welding machine to realize the solidification of the gold-tin soldering paste in the welding part, so as to form a gold-tin soldering material layer 4;
and S5, cleaning the surface of the cover plate packaging structure subjected to laser welding by using isopropanol.
Embodiment III:
alumina ceramics have been widely used in many industries as an excellent ceramic material. The material has excellent properties in terms of electrical insulation, high thermal conductivity, high chemical resistance, good wear resistance and low thermal expansion. On the basis, referring to fig. 1, 2 or 4, the embodiment provides a method for manufacturing a cover plate packaging structure, which includes the following steps:
step S1, an aluminum oxide ceramic plate is selected as a base material 1, the aluminum oxide ceramic plate is cut to obtain a ceramic plate with the size of 18 multiplied by 0.54mm (length multiplied by width multiplied by height), an active metal titanium layer with the thickness of 0.1 mu m is formed on the surface of the formed ceramic plate by a film method, double-layer electroplating is used, a nickel plating layer 201 and a gold plating layer 202 are plated in sequence, wherein the thickness of the nickel plating layer 201 is 2.5 mu m, and the thickness of the gold plating layer 202 is 1.3 mu m;
step S2, grooving the metallized substrate material 1 by utilizing a wet etching process to form a solder mask groove 3, wherein the groove depth of the solder mask groove 3 is 2.5 mu m, the gold plating layer 202 at the position of the solder mask groove 3 is removed, the nickel plating layer 201 is exposed, the groove width is 30 mu m, the solder mask groove 3 is a centered square pattern, the distance from the edge of the substrate material 1 is 1mm, and a welding part is arranged between the solder mask groove 3 and the edge of the upper surface of the substrate material 1;
s3, using gold-tin soldering paste with the particle size of 25-45 mu m in a welding part, and coating by adopting a printing process, wherein the width of the coated gold-tin soldering paste is 0.6mm, and the height of the coated gold-tin soldering paste is 0.05mm;
step S4, locally heating the welding part by utilizing a laser welding machine to realize the solidification of the gold-tin soldering paste in the welding part, so as to form a gold-tin soldering material layer 4;
and S5, selecting a mixed solution of trichloroethylene and absolute ethyl alcohol to clean the surface of the cover plate packaging structure treated in the step S4.
In the specific content of the above embodiment, any combination of the technical features may be performed without contradiction, and for brevity of description, all possible combinations of the technical features are not described, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
It is to be understood that the above examples of the present invention are provided by way of illustration only and not by way of limitation of the embodiments of the present invention. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are desired to be protected by the following claims.
Claims (10)
1. The utility model provides a apron packaging structure, including being used for with base plate sealing connection realization to the base material (1) of components and parts encapsulation, the surface of base material (1) has plated metallization processing layer (2), metallization processing layer (2) are including nickel plating layer (201) and gilding layer (202), gilding layer (202) set up the skin on nickel plating layer (201), a serial communication port, be equipped with on metallization processing layer (2) on the side of base material (1) and base plate sealing connection, solder resist recess (3) extend downwards from the upper surface of gilding layer (202) to nickel plating layer (201) and make nickel plating layer (201) expose, solder resist recess (3) separate metallization processing layer (2) into inboard encapsulation portion and outside welding portion, the welding portion is equipped with Jin Xihan layer (4) that are formed by paste gold tin solder solidification.
2. The lid package according to claim 1, characterized in that the width of the solder resist groove (3) is 15-50 μm.
3. The cover plate packaging structure according to claim 2, wherein the Jin Xihan material layer (4) is a binary alloy comprising two elements of gold and tin, and the mass fraction of gold is 70% -80%.
4. A cover plate package structure according to claim 3, wherein the Jin Xihan layer (4) is Au80Sn20.
5. The cover plate packaging structure according to claim 1, wherein the metallization layer (2) is of a single-layer structure or a multi-layer laminated structure, the total thickness of the nickel plating layer (201) is 1.3-11.43 μm, and the total thickness of the gold plating layer (202) is 0.8-5.7 μm.
6. The cover plate packaging structure according to any one of claims 1 to 5, wherein the material of the base material (1) is any one of kovar alloy, iron-nickel alloy, molybdenum-copper, tungsten-copper, ceramic, and silicon nitride.
7. A method for manufacturing the cover plate packaging structure according to any one of claims 1 to 6, comprising the steps of:
step S1, carrying out metallization treatment on a substrate (1), and sequentially electroplating on the surface of the substrate (1) to form a metallization treatment layer (2) comprising a nickel plating layer (201) and a gold plating layer (202), wherein the gold plating layer (202) is arranged outside the nickel plating layer (201);
step S2, grooving the side surface of the base material (1) which is subjected to metallization treatment in the step S1 and is in sealing connection with the substrate to form a solder resist groove (3), wherein the solder resist groove (3) extends downwards from the upper surface of the gold plating layer (202) to the nickel plating layer (201) and exposes the nickel plating layer (201), and a welding part is arranged between the solder resist groove (3) and the edge of the upper surface of the base material (1);
step S3, coating paste-like gold-tin soldering paste on the welding part formed in the step S2, wherein the height of the gold-tin soldering paste is 0.05-0.1mm;
step S4, laser heating is carried out on the welding part, so that the gold-tin soldering paste coated in the step S3 is solidified, and a gold-tin soldering layer (4) is formed;
and S5, cleaning the surface of the cover plate packaging structure manufactured in the step S4.
8. The method of claim 7, wherein in step S2, the grooving is laser grooving or wet etching.
9. The method of manufacturing a lid package according to claim 7, wherein in step S3, the coating is performed by any one of spraying, spot coating, or printing.
10. The method of claim 7, wherein in step S5, the solvent used for cleaning the surface of the lid package is one or more of absolute ethyl alcohol, isopropyl alcohol, and trichloroethylene.
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| CN202311148347.6A CN116884923A (en) | 2023-09-07 | 2023-09-07 | Cover plate packaging structure and preparation method thereof |
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| CN202311148347.6A CN116884923A (en) | 2023-09-07 | 2023-09-07 | Cover plate packaging structure and preparation method thereof |
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