CN115939091B - High-heat-conductivity packaging substrate and preparation method thereof - Google Patents
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Abstract
The invention discloses a high-heat-conductivity packaging substrate and a preparation method thereof. The substrate comprises a substrate, wherein one side surface of the substrate is sequentially covered with an active solder layer, a conductive layer, an electroplated layer, a barrier layer and a preplating solder layer from inside to outside, and the other side surface of the substrate is sequentially covered with the active solder layer, the conductive layer, the electroplated layer and the preplating solder layer from inside to outside. The invention can realize twice welding of the substrate based on the preplating solder while ensuring high binding force between the copper layer and the high heat conductivity ceramic substrate, and effectively improves the production efficiency.
Description
Technical Field
The invention relates to the field of electronic packaging materials, in particular to a high-heat-conductivity packaging substrate and a preparation method thereof.
Background
The high-power semiconductor chip has high requirements on the heat conduction capacity of the packaging substrate, and the common high-heat conduction substrates comprise DPC ceramic copper-clad plates and DBC ceramic copper-clad plates. The DPC ceramic copper-clad plate is characterized in that a thinner copper layer is firstly plated on a ceramic substrate in vacuum, and then the copper layer is thickened by electroplating, so that the substrate can be processed into a packaging substrate with a precise circuit, but the bonding force between the copper layer and the ceramic is general. The DBC ceramic copper-clad plate is formed by directly sintering a copper layer and ceramic, and the copper layer has good bonding force, but is mainly applied to an alumina substrate, and ceramic substrates such as aluminum nitride, silicon nitride and the like with higher heat conductivity are not easy to be directly sintered with the copper layer. In addition, soldering between the chip and the substrate is generally performed by using solder paste or a solder sheet, and the height of the formed solder joint is often tens of micrometers, so that the thermal resistance is not negligible. The current improvement method is to pre-plate the solder with micrometer thickness on the substrate, and the commonly used solder is gold-tin alloy. However, if the substrate must undergo two soldering processes during the packaging process (e.g., die-to-substrate soldering, substrate-to-heat spreader soldering), the preplating solder on the substrate will reflow during the second soldering, resulting in failure of the solder joints formed during the first soldering. Therefore, the flexibility of the application of the current pre-solder-plated substrate is limited, and additional solder (solder sheet, solder paste, etc.) is still needed to complete the second soldering of the substrate, which is low in production efficiency.
Disclosure of Invention
In view of the above, the present invention provides a high thermal conductivity package substrate and a method for manufacturing the same, which can ensure high bonding force between a copper layer and a high thermal conductivity ceramic substrate, and simultaneously realize two times of soldering of the substrate based on preplating solder, thereby effectively improving production efficiency.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the high-heat-conductivity packaging substrate comprises a substrate, wherein one side surface of the substrate is sequentially covered with an active solder layer, a conductive layer, an electroplated layer, a barrier layer and a preplating solder layer from inside to outside, and the other side surface of the substrate is sequentially covered with the active solder layer, the conductive layer, the electroplated layer and the preplating solder layer from inside to outside;
the base material is one of aluminum nitride and aluminum oxide;
the active solder layer is made of ternary alloy consisting of Ti, ag and Cu;
the conducting layer is made of Cu;
the electroplated layer sequentially comprises a Ni layer and an Au layer;
the material of the barrier layer is Pt;
the material of the preplating solder layer is binary alloy composed of Au and Sn.
The invention combines the active solder with the copper of the conductive layer at two sides of the base material, thus strengthening the bonding force between the copper layer and the ceramic substrate, ensuring good heat conduction capability of the substrate due to the thin thickness of the active solder and good heat conduction; meanwhile, the reaction rate between the barrier layer and the preplating solder layer in the substrate is low, so that the preplating solder layer on one side provided with the barrier layer is small in composition after being melted, the welding performance is not greatly influenced by remelting for many times, and on the other side not provided with the barrier layer in the substrate, the Sn element in the melted preplating solder layer is greatly consumed in the welding metallurgical reaction with the electroplated layer, so that the Au content in the preplating solder layer is obviously deviated from the eutectic alloy proportion, and the melting temperature of the preplating solder layer is improved based on the law in the gold-tin binary alloy phase diagram, so that the preplating solder layer is not melted in the second welding process, and the failure of welding spots caused by remelting is well avoided, namely the invention can finish the secondary welding of the substrate without adopting extra solder.
Therefore, the substrate can realize twice welding of the substrate based on the preplating solder while ensuring high bonding force between the copper layer and the high-heat-conductivity ceramic substrate, and effectively improves the production efficiency.
In a more preferred embodiment, the thickness of the active solder layer is 10-30 μm.
In a more preferred embodiment, the thickness of the conductive layer is 30-100 μm.
In a more preferred embodiment, the thickness of the barrier layer is 50-500 nm.
In a more preferred embodiment, the thickness of the preplating solder layer is 3-6 μm.
In a more preferred embodiment, the mass fraction of Au in the preplating solder layer is 70% -80%.
The invention also provides a preparation method of the high-heat-conductivity packaging substrate, which comprises the following steps:
s1, respectively stacking active solder and copper foil on the surfaces of two sides of a base material in sequence, and connecting the active solder, the copper foil and the base material into a whole by adopting a vacuum brazing process;
s2, grinding the surface of the copper foil;
s3, etching the substrate according to a circuit drawing of the substrate to remove redundant active solder and copper foil on the substrate;
s4, sequentially electroplating a Ni layer and an Au layer on the surface of the copper foil;
s5, sequentially depositing Pt and gold-tin alloy on the Au layer on one side of the substrate by adopting a vacuum coating process;
s6, depositing gold-tin alloy on the Au layer on the other side of the substrate by adopting a vacuum coating process;
and S7, dividing the finished product obtained in the step S6 according to a substrate drawing.
In a more preferred embodiment, the conditions of the vacuum brazing process are: vacuum degree of 1 x 10 -5 ~1*10 - 3 Pa, and the temperature is 800-1000 ℃.
In a more preferred embodiment, after the surface of the copper foil is polished in step S2, the roughness Ra of the copper foil surface is equal to or less than 0.3 μm and the flatness error value is equal to or less than 5 μm.
In a preferred embodiment, the conditions for vacuum coating are: vacuum degree of 1 x 10 -4 ~5*10 -3 Pa, the deposition rate is 1-10A/s.
In a more preferred embodiment, the active solder is in the form of a metal powder or sheet.
Compared with the prior art, the invention has the following technical effects:
the invention adopts the active metal brazing process to realize the tight connection between the high heat conduction ceramic substrate and the copper layer, ensures the good heat conduction capacity and reliability of the substrate, and is beneficial to preparing finer circuit patterns. Meanwhile, the gold-tin solder with the micron-scale thickness preplated on the surface of the substrate can reduce the height of a welding spot so as to reduce the thermal resistance of a system, and can finish two-time welding by utilizing the preplated solder on the substrate, so that the welding process is simplified, the packaging automation is facilitated, and the production efficiency is improved.
Drawings
Fig. 1 is a schematic structural diagram of a package substrate with high thermal conductivity according to the present invention.
In the figure: 1-substrate, 2-active solder layer, 3-conductive layer, 4-electroplated layer, 5-barrier layer, 6-preplating solder layer.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the present patent; for the purpose of better illustrating the embodiments, certain elements of the drawings may be omitted, enlarged or reduced and do not represent the actual product dimensions; it will be appreciated by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted. The positional relationship depicted in the drawings is for illustrative purposes only and is not to be construed as limiting the present patent.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be further clearly and completely described in the following in conjunction with the embodiments of the present invention. It should be noted that the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The same or similar reference numbers in the drawings of embodiments of the invention correspond to the same or similar components; in the description of the present invention, it should be understood that, if there is an azimuth or positional relationship indicated by terms such as "upper", "lower", "left", "right", etc., based on the azimuth or positional relationship shown in the drawings, it is only for convenience of describing the present invention and simplifying the description, but it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be constructed and operated in a specific azimuth, and thus terms describing the positional relationship in the drawings are merely illustrative and should not be construed as limitations of the present patent, and specific meanings of the terms described above may be understood by those skilled in the art according to specific circumstances.
Example 1:
as shown in fig. 1, the embodiment provides a high thermal conductivity package substrate, which comprises a substrate 1, wherein one side surface of the substrate 1 is sequentially covered with an active solder layer 2, a conductive layer 3, a plating layer 4, a barrier layer 5 and a preplating solder layer 6 from inside to outside, and the other side surface of the substrate 1 is sequentially covered with the active solder layer 2, the conductive layer 3, the plating layer 4 and the preplating solder layer 6 from inside to outside;
the base material 1 is one of aluminum nitride and aluminum oxide;
the active solder layer 2 is made of ternary alloy consisting of Ti, ag and Cu;
the material of the conductive layer 3 is Cu;
the electroplated layer 4 sequentially comprises a Ni layer and an Au layer;
the material of the barrier layer 5 is Pt;
the material of the preplating solder layer 6 is binary alloy composed of Au and Sn.
The preparation flow of the high-heat-conductivity packaging substrate is as follows:
s1, respectively stacking active solder and copper foil on the surfaces of two sides of a base material 1 in sequence, and connecting the active solder, the copper foil and the base material into a whole by adopting a vacuum brazing process;
s2, grinding the surface of the copper foil;
s3, etching the substrate according to a substrate circuit drawing to remove redundant active solder and copper foil on the base material 1;
s4, sequentially electroplating a Ni layer and an Au layer on the surface of the copper foil;
s5, sequentially depositing Pt and gold-tin alloy on the Au layer on one side of the substrate 1 by adopting a vacuum coating process;
s6, depositing gold-tin alloy on the Au layer on the other side of the substrate 1 by adopting a vacuum coating process;
and S7, dividing the finished product obtained in the step S6 according to a substrate drawing.
It should be noted that, the circuit drawing of the substrate is a design drawing obtained by an operator before the substrate is manufactured, and belongs to a design process before the manufacture, and it is clear to those skilled in the art.
In a preferred embodiment, the vacuum brazing process in the step S1 is performed under the following conditions: vacuum degree of 1 x 10 -5 ~1*10 -3 Pa, and the temperature is 800-1000 ℃. Wherein the vacuum brazing process can be realized by a vacuum brazing furnace.
In a more preferred embodiment, the surface of the copper foil is polished in the step S2, so that the roughness Ra of the surface of the copper foil is not more than 0.3 μm and the flatness error value is not more than 5. Mu.m. Wherein, the copper foil surface of the substrate can be mechanically grinded.
In a preferred embodiment, the vacuum plating conditions in the steps S5 and S6 are as follows: vacuum degree of 1 x 10 -4 ~5*10 -3 Pa, the deposition rate is 1-10A/s.
It should be noted that the equipment and operation principle required by the vacuum brazing process or the vacuum coating process are all conventional operations for those skilled in the art, and the operator can adjust the above processing parameters according to the actual preparation process.
In a preferred embodiment, the active solder is in the form of a metal powder or a metal sheet.
In a preferred embodiment, the substrate to be obtained is divided and mechanically cut by a precision dicing saw or a laser dicing saw.
The invention combines the active solder with the copper of the conductive layer at the two sides of the base material 1, thus strengthening the bonding force between the copper layer and the ceramic substrate, ensuring good heat conduction capability of the substrate due to the thin thickness of the active solder and good heat conduction; meanwhile, the reaction rate between the barrier layer 5 and the preplating solder layer 6 in the substrate is low, so that the preplating solder layer 6 on one side provided with the barrier layer 5 is small in composition after being melted, and the welding performance is not greatly influenced even if the preplating solder layer 6 is subjected to remelting for many times, and on the other side not provided with the barrier layer 5 in the substrate, the Sn element in the melted preplating solder layer 6 is greatly consumed in the welding metallurgical reaction with the electroplated layer 4, so that the Au content in the preplating solder layer 6 is obviously deviated from the eutectic alloy proportion, and the melting temperature of the preplating solder layer 6 is improved based on the law in the gold-tin binary alloy phase diagram, so that the preplating solder layer 6 is not melted in the second welding process, and the failure of a welding spot caused by remelting is well avoided, namely the invention can finish the secondary welding of the substrate without adopting extra solder.
Therefore, the substrate can realize twice welding of the substrate based on the preplating solder while ensuring high bonding force between the copper layer and the high-heat-conductivity ceramic substrate, and effectively improves the production efficiency.
In a more preferred embodiment, the thickness of the active solder layer 2 is 10-30 μm.
In a more preferred embodiment, the thickness of the conductive layer 3 is 30-100 μm.
In a more preferred embodiment, the thickness of the barrier layer 5 is 50-500 nm.
In a more preferred embodiment, the thickness of the preplating solder layer 6 is 3-6 μm.
The above-mentioned arrangement of the thicknesses in the active solder layer 2, the conductive layer 3, the barrier layer 5 and the preplating solder layer 6 ensures a better heat conduction capability of the substrate.
In a more preferred embodiment, the mass fraction of Au in the preplating solder layer 6 is 70% -80%.
The invention adopts the active metal brazing process to realize the tight connection between the high heat conduction ceramic substrate and the copper layer, ensures the good heat conduction capacity and reliability of the substrate, and is beneficial to preparing finer circuit patterns. Meanwhile, the gold-tin solder with the micron-scale thickness preplated on the surface of the substrate can reduce the height of a welding spot so as to reduce the thermal resistance of a system, and can finish two-time welding by utilizing the preplated solder on the substrate, so that the welding process is simplified, the packaging automation is facilitated, and the production efficiency is improved.
Example 2:
the embodiment provides a specific application example of the high heat conduction package substrate in embodiment 1, in particular to a preparation method of the package substrate for a high-power laser, which comprises the following steps:
1) The Ag70Cu28Ti2 alloy sheets (thickness 30 μm) and the copper foil (thickness 100 μm) are respectively stacked on the two side surfaces of an aluminum nitride ceramic sheet (thickness 0.35 mm) in sequence, and then are put into a vacuum brazing furnace for brazing, so that the three are connected into a whole, and the process conditions are as follows: vacuum degree 1 x 10 -5 ~1*10 -3 Pa, and the temperature is 850-950 ℃;
2) Mechanically grinding the copper foil surface of the substrate after brazing to ensure that the surface roughness Ra is less than or equal to 0.3 mu m and the flatness error value is less than or equal to 5 mu m;
3) Etching the substrate chemically according to the circuit drawing of the substrate, and corroding to remove redundant active solder and copper foil on the aluminum nitride ceramic wafer;
4) Sequentially electroplating a Ni layer and an Au layer on the surface of the copper foil, wherein the thickness of the Ni layer is more than or equal to 1 mu m, and the thickness of the Au layer is more than or equal to 0.5 mu m;
5) And sequentially depositing Pt and gold-tin alloy on the surface of the Au layer on one side of the aluminum nitride ceramic wafer by adopting a vacuum coating process, wherein the thickness of the Pt layer is 500nm, and the thickness of the gold-tin alloy layer is 6 mu m, and the process conditions are as follows: vacuum degree 1 x 10 -4 ~5*10 -3 Pa, the deposition rate of the Pt layer is 1-5A/s, and the deposition rate of the gold-tin alloy is 1-5A/s;
6) And continuously adopting a vacuum coating process to deposit gold-tin alloy on the surface of the Au layer on the other side of the aluminum nitride ceramic wafer, wherein the thickness of the gold-tin alloy layer is 6 mu m, and the process conditions are as follows: vacuum degree 1 x 10 -4 ~5*10 -3 Pa, the deposition rate of the gold-tin alloy is 1-5A/s;
7) And (3) mechanically cutting the finished product prepared in the step (6) by using a precise dicing saw or a laser dicing saw according to the substrate drawing.
Example 3:
this embodiment is similar to embodiment 2 in that in this embodiment, a method for manufacturing a package substrate for a high-power laser includes the steps of:
1) The Ag70Cu28Ti2 alloy sheets (thickness 10 μm) and the copper foil (thickness 30 μm) are respectively stacked on the two side surfaces of an aluminum nitride ceramic sheet (thickness 0.35 mm) in sequence, and then are put into a vacuum brazing furnace for brazing, so that the three are connected into a whole, and the process conditions are as follows: vacuum degree is 1-5-1-10-3 Pa, and temperature is 850-950 ℃;
2) Mechanically grinding the copper foil surface of the substrate after brazing to ensure that the surface roughness Ra is less than or equal to 0.3 mu m and the flatness error value is less than or equal to 5 mu m;
3) Etching the substrate chemically according to the circuit drawing of the substrate, and corroding to remove redundant active solder and copper foil on the aluminum nitride ceramic wafer;
4) Sequentially electroplating a Ni layer and an Au layer on the surface of the copper foil, wherein the thickness of the Ni layer is more than or equal to 1 mu m, and the thickness of the Au layer is more than or equal to 0.5 mu m;
5) And sequentially depositing Pt and gold-tin alloy on the surface of the Au layer on one side of the aluminum nitride ceramic wafer by adopting a vacuum coating process, wherein the thickness of the Pt layer is 50nm, and the thickness of the gold-tin alloy layer is 3 mu m, and the process conditions are as follows: vacuum degree is 1-4-5-10-3 Pa, pt layer deposition rate is 1-5A/s, and gold-tin alloy deposition rate is 1-5A/s;
6) And continuously adopting a vacuum coating process to deposit gold-tin alloy on the surface of the Au layer on the other side of the aluminum nitride ceramic wafer, wherein the thickness of the gold-tin alloy layer is 3 mu m, and the process conditions are as follows: vacuum degree is 1 x 10 < -4 > to 5 x 10 < -3 > Pa, and deposition rate of the gold-tin alloy is 1 to 5A/s;
7) And (3) mechanically cutting the finished product prepared in the step (6) by using a precise dicing saw or a laser dicing saw according to the substrate drawing.
It is to be understood that the above examples of the present invention are provided by way of illustration only and are not intended to limit the scope of the invention. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are desired to be protected by the following claims.
Claims (9)
1. The high-heat-conductivity packaging substrate is characterized by comprising a base material (1), wherein one side surface of the base material (1) is sequentially covered with an active solder layer (2), a conductive layer (3), an electroplated layer (4), a barrier layer (5) and a preplating solder layer (6) from inside to outside, and the other side surface of the base material (1) is sequentially covered with the active solder layer (2), the conductive layer (3), the electroplated layer (4) and the preplating solder layer (6) from inside to outside;
the material of the base material (1) is one of aluminum nitride and aluminum oxide;
the active solder layer (2) is made of ternary alloy consisting of Ti, ag and Cu;
the conducting layer (3) is made of Cu;
the electroplated layer (4) sequentially comprises a Ni layer and an Au layer;
the material of the barrier layer (5) is Pt;
the material of the preplating solder layer (6) is binary alloy composed of Au and Sn;
the mass fraction of Au in the preplating solder layer (6) is 70% -80%.
2. The package substrate of claim 1, wherein the thickness of the active solder layer (2) is 10-30 μm.
3. The package substrate of claim 1, wherein the thickness of the conductive layer (3) is 30-100 μm.
4. The high thermal conductivity package substrate according to claim 1, wherein the thickness of the barrier layer (5) is 50-500 nm.
5. The high thermal conductivity package substrate according to claim 1, wherein the thickness of the preplating solder layer (6) is 3-6 μm.
6. A method of manufacturing the high thermal conductivity package substrate of claim 1, comprising the steps of:
s1, respectively stacking active solder and copper foil on the surfaces of two sides of a base material (1) in sequence, and connecting the active solder, the copper foil and the base material into a whole by adopting a vacuum brazing process;
s2, grinding the surface of the copper foil;
s3, etching the substrate according to a substrate circuit drawing to remove redundant active solder and copper foil on the base material (1);
s4, sequentially electroplating a Ni layer and an Au layer on the surface of the copper foil;
s5, sequentially depositing Pt and gold-tin alloy on the Au layer on one side of the substrate (1) by adopting a vacuum coating process;
s6, depositing gold-tin alloy on the Au layer on the other side of the substrate (1) by adopting a vacuum coating process;
and S7, dividing the finished product obtained in the step S6 according to a substrate drawing.
7. The method for manufacturing a package substrate with high thermal conductivity according to claim 6, wherein the vacuum brazing process comprises the following conditions: vacuum degree of 1 x 10 -5 ~1*10 -3 Pa, and the temperature is 800-1000 ℃.
8. The method of manufacturing a package substrate with high thermal conductivity according to claim 6, wherein after the surface of the copper foil is polished in step S2, the roughness Ra of the copper foil surface is less than or equal to 0.3 μm, and the flatness error value is less than or equal to 5 μm.
9. The method for manufacturing a package substrate with high thermal conductivity according to claim 6, wherein the vacuum plating conditions are as follows: vacuum degree of 1 x 10 -4 ~5*10 -3 Pa, the deposition rate is 1-10A/s.
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| CN101182642A (en) * | 2007-12-18 | 2008-05-21 | 长春理工大学 | Method of electroplating combined vacuum coating preparing Au-Sn alloy solder |
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| CN113088289A (en) * | 2021-03-30 | 2021-07-09 | 华中科技大学 | Etching solution, application thereof and preparation method of high-bonding-strength metal layer on ceramic surface |
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| JP2022185288A (en) * | 2021-06-02 | 2022-12-14 | 上村工業株式会社 | Multilayer plating film |
| CN115028477A (en) * | 2022-06-15 | 2022-09-09 | 深圳元点真空装备有限公司 | DSC ceramic metallization technology and ceramic packaging substrate prepared by same |
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| CN101182642A (en) * | 2007-12-18 | 2008-05-21 | 长春理工大学 | Method of electroplating combined vacuum coating preparing Au-Sn alloy solder |
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