CN115939091A - High-thermal-conductivity packaging substrate and preparation method thereof - Google Patents
High-thermal-conductivity packaging substrate and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a high-thermal-conductivity packaging substrate and a preparation method thereof. The base plate includes the base material, one side surface of base material stacks gradually from inside to outside and has covered active solder layer, conducting layer, plating layer, barrier layer and pre-plating solder layer, the opposite side surface of base material stacks gradually from inside to outside and has covered active solder layer, conducting layer, plating layer and pre-plating solder layer. The invention can realize the two-time welding of the substrate based on the preplated solder while ensuring the high bonding force between the copper layer and the ceramic substrate with high thermal conductivity, thereby effectively improving the production efficiency.
Description
Technical Field
The invention relates to the field of electronic packaging materials, in particular to a high-thermal-conductivity packaging substrate and a preparation method thereof.
Background
The high-power semiconductor chip puts high requirements on the heat conduction capability of a packaging substrate, and the commonly used high-heat conduction substrates include a DPC ceramic copper-clad plate and a DBC ceramic copper-clad plate. The DPC ceramic copper-clad plate is formed by vacuum-plating a thin copper layer on a ceramic substrate and thickening the copper layer through electroplating, and the substrate can be processed into a packaging substrate with a precise circuit, but the bonding force between the copper layer and the ceramic is general. The DBC ceramic copper-clad plate is formed by directly sintering a copper layer and ceramic, the copper layer has good bonding force, but the DBC ceramic copper-clad plate is mainly applied to an alumina substrate, and ceramic substrates with higher thermal conductivity such as aluminum nitride and silicon nitride are not easy to directly sinter with the copper layer. In addition, solder paste or solder pieces are generally used for soldering between the chip and the substrate, and the height of the formed solder joint is often tens of microns, so that the thermal resistance is not negligible. The current improvement method is to pre-plate the solder with micron-sized thickness on the substrate, and the commonly used solder is gold-tin alloy. However, if the substrate must undergo two soldering processes (e.g., die-to-substrate soldering, substrate-to-heat spreader soldering) during the packaging process, the solder pre-plating on the substrate will reflow during the second soldering process, resulting in failure of the solder joint formed during the first soldering process. Therefore, the flexibility of the application of the prior pre-plated substrate is limited, and other solders (solder pieces, solder paste, and the like) are generally required to be additionally adopted to complete the second welding of the substrate, so that the production efficiency is low.
Disclosure of Invention
In view of the above, the invention provides a high thermal conductivity packaging substrate and a method for manufacturing the same, which can ensure high bonding force between a copper layer and a high thermal conductivity ceramic substrate, and can realize two times of welding of the substrate based on pre-plating solder, thereby effectively improving production efficiency.
In order to achieve the purpose, the invention adopts the following technical scheme:
a high-thermal-conductivity packaging substrate comprises a base material, wherein an active solder layer, a conductive layer, an electroplated layer, a barrier layer and a pre-plated solder layer are sequentially stacked and covered on the surface of one side of the base material from inside to outside, and an active solder layer, a conductive layer, an electroplated layer and a pre-plated solder layer are sequentially stacked and covered on the surface of the other side of the base material from inside to outside;
the base material is one of aluminum nitride and aluminum oxide;
the active solder layer is made of ternary alloy consisting of Ti, ag and Cu;
the conducting layer is made of Cu;
the electroplated layer sequentially comprises a Ni layer and an Au layer;
the barrier layer is made of Pt;
the pre-plating solder layer is made of binary alloy consisting of Au and Sn.
According to the invention, the active solder is combined with the copper of the conductive layer on two sides of the base material, so that the bonding force between the copper layer and the ceramic substrate is enhanced, the active solder is thin and has good heat conduction, and the good heat conduction capability of the substrate is ensured; meanwhile, because the reaction rate between the barrier layer and the pre-plating solder layer in the substrate is low, the pre-plating solder layer on one side of the substrate provided with the barrier layer has small components after being melted, the welding performance of the pre-plating solder layer is not greatly influenced after being remelted for many times, and on the other side of the substrate not provided with the barrier layer, because the Sn element in the melted pre-plating solder layer is greatly consumed in the welding metallurgical reaction with the electroplated layer, the content of Au in the pre-plating solder layer is obviously deviated from the eutectic alloy proportion, and the melting temperature of the pre-plating solder layer is improved based on the law in the gold-tin binary alloy phase diagram, so that the pre-plating solder layer is not melted in the second welding process, the failure of a welding point caused by remelting is well avoided, and the secondary welding of the substrate can be finished without adopting additional solder.
Therefore, the substrate of the invention can realize two times of welding of the substrate based on the preplated solder while ensuring high bonding force between the copper layer and the high-thermal-conductivity ceramic substrate, thereby effectively improving the production efficiency.
In a more preferred embodiment, the thickness of the active solder layer is 10 to 30 μm.
In a more preferred embodiment, the thickness of the conductive layer is 30 to 100 μm.
In a more preferred embodiment, the thickness of the barrier layer is 50 to 500nm.
In a more preferred embodiment, the thickness of the pre-plated solder layer is 3 to 6 μm.
In a more preferred embodiment, the mass fraction of Au in the pre-plated solder layer is 70% to 80%.
The invention also provides a preparation method of the packaging substrate with high thermal conductivity, which comprises the following steps:
s1, respectively stacking active solder and copper foil on the surfaces of two sides of a base material in sequence, and connecting the active solder and the copper foil into a whole by adopting a vacuum brazing process;
s2, grinding the surface of the copper foil;
s3, etching the substrate according to the circuit drawing of the substrate, and removing redundant active solder and copper foil on the substrate;
s4, sequentially electroplating a Ni layer and an Au layer on the surface of the copper foil;
s5, sequentially depositing Pt and gold-tin alloy on the Au layer on one side of the substrate by adopting a vacuum coating process;
s6, depositing gold-tin alloy on the Au layer on the other side of the substrate by adopting a vacuum coating process;
and S7, dividing the finished product obtained in the step S6 according to a substrate drawing.
In a preferred embodiment, the conditions of the vacuum brazing process are as follows: vacuum degree of 1 x 10 -5 ~1*10 - 3 Pa, and the temperature is 800 to 1000 ℃.
In a more preferred embodiment, after the surface of the copper foil is polished in step S2, the surface of the copper foil has a roughness Ra of 0.3 μm or less and a flatness error of 5 μm or less.
In a preferred embodiment, the vacuum coating conditions are as follows: vacuum degree of 1 x 10 -4 ~5*10 -3 Pa, deposition rate of 1 to 10A/s.
In a more preferred embodiment, the active solder is in the form of a metal powder or a metal sheet.
Compared with the prior art, the invention has the following technical effects:
the invention adopts the active metal brazing process to realize the close connection of the high-heat-conductivity ceramic substrate and the copper layer, ensures the good heat conduction capability and reliability of the substrate and is beneficial to preparing finer circuit patterns. Meanwhile, the gold-tin solder with micron-sized thickness pre-plated on the surface of the substrate can reduce the height of a welding point so as to reduce the thermal resistance of a system on one hand, and can complete two times of welding by using the solder pre-plated on the substrate on the other hand, thereby simplifying the welding process, being beneficial to realizing the packaging automation and improving the production efficiency.
Drawings
Fig. 1 is a schematic structural diagram of a high thermal conductivity package substrate according to the present invention.
In the figure: 1-substrate, 2-active solder layer, 3-conductive layer, 4-electroplated layer, 5-barrier layer and 6-preplated solder layer.
Detailed Description
The drawings are for illustrative purposes only and are not to be construed as limiting the patent; for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted. The positional relationships depicted in the drawings are for illustrative purposes only and are not to be construed as limiting the present patent.
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be further clearly and completely described below with reference to the embodiments of the present invention. It should be noted that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there is an orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. based on the orientation or positional relationship shown in the drawings, it is only for convenience of describing the present invention and simplifying the description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and are not to be construed as limiting the present patent, and the specific meaning of the terms may be understood by those skilled in the art according to specific circumstances.
Example 1:
as shown in fig. 1, the present embodiment provides a high thermal conductivity package substrate, which includes a substrate 1, wherein one side surface of the substrate 1 is sequentially laminated from inside to outside and covered with an active solder layer 2, a conductive layer 3, a plating layer 4, a barrier layer 5 and a pre-plated solder layer 6, and the other side surface of the substrate 1 is sequentially laminated from inside to outside and covered with the active solder layer 2, the conductive layer 3, the plating layer 4 and the pre-plated solder layer 6;
the material of the base material 1 is one of aluminum nitride and aluminum oxide;
the active solder layer 2 is made of a ternary alloy consisting of Ti, ag and Cu;
the conductive layer 3 is made of Cu;
the electroplated layer 4 sequentially comprises a Ni layer and an Au layer;
the barrier layer 5 is made of Pt;
the pre-plating solder layer 6 is made of binary alloy consisting of Au and Sn.
The preparation process of the high-thermal-conductivity packaging substrate comprises the following steps:
s1, respectively stacking active solder and copper foil on the surfaces of two sides of a base material 1 in sequence, and connecting the active solder and the copper foil into a whole by adopting a vacuum brazing process;
s2, grinding the surface of the copper foil;
s3, etching the substrate according to the substrate circuit drawing, and removing redundant active solder and copper foil on the base material 1;
s4, sequentially electroplating a Ni layer and an Au layer on the surface of the copper foil;
s5, depositing Pt and a gold-tin alloy on the Au layer on one side of the substrate 1 in sequence by adopting a vacuum coating process;
s6, depositing gold-tin alloy on the Au layer on the other side of the substrate 1 by adopting a vacuum coating process;
and S7, dividing the finished product obtained in the step S6 according to a substrate drawing.
It should be noted that the substrate circuit drawing in the above description is a design drawing obtained by an operator before manufacturing a substrate, belongs to a design process before manufacturing, and is clear to those skilled in the art.
In a more preferred embodiment, the conditions of the vacuum brazing process in step S1 are as follows: vacuum degree of 1 x 10 -5 ~1*10 -3 Pa, and the temperature is 800 to 1000 ℃. Wherein the vacuum brazing process is performed by vacuum brazingAnd (4) furnace realization.
In a more preferred embodiment, after polishing the surface of the copper foil in the step S2, the surface of the copper foil has a roughness Ra of 0.3 μm or less and a flatness error of 5 μm or less. Wherein, the copper foil surface of the substrate can adopt a mechanical grinding mode.
In a more preferred embodiment, the conditions of the vacuum plating in steps S5 and S6 are as follows: vacuum degree of 1 x 10 -4 ~5*10 -3 Pa, deposition rate of 1 to 10A/s.
It should be noted that the equipment and operation principle required by the vacuum brazing process or the vacuum coating process are routine operations for those skilled in the art, and are clear, and the operator can adjust the processing parameters according to the actual preparation process.
In a more preferred embodiment, the active solder is in the form of metal powder or metal flakes.
In a more preferred embodiment, the substrate to be obtained is divided by a mechanical dicing using a precision dicing saw or a laser dicing saw.
According to the invention, the active solder is combined with the copper of the conductive layer on two sides of the base material 1, so that the bonding force between the copper layer and the ceramic substrate is enhanced, the active solder is thin and has good heat conduction, and the good heat conduction capability of the substrate is ensured; meanwhile, because the reaction rate between the barrier layer 5 and the pre-plating solder layer 6 in the substrate is low, the pre-plating solder layer 6 on one side of the substrate provided with the barrier layer 5 has small components after being melted, and the welding performance of the pre-plating solder layer is not greatly influenced after being melted for many times, while on the other side of the substrate not provided with the barrier layer 5 in the substrate provided with the barrier layer 5, because the Sn element in the melted pre-plating solder layer 6 is greatly consumed in the welding metallurgical reaction with the electroplated layer 4, the content of Au in the pre-plating solder layer 6 is obviously deviated from the eutectic alloy proportion, and the melting temperature of the pre-plating solder layer 6 is improved based on the law in a gold-tin binary alloy phase diagram, so that the pre-plating solder layer 6 is not melted in the second welding process, the failure of a welding point caused by remelting is well avoided, and the secondary welding of the substrate can be completed without adopting extra solder.
Therefore, the substrate of the invention can realize two times of welding of the substrate based on the preplated solder while ensuring high bonding force between the copper layer and the high-thermal-conductivity ceramic substrate, thereby effectively improving the production efficiency.
In a more preferred embodiment, the thickness of the active solder layer 2 is 10 to 30 μm.
In a more preferred embodiment, the thickness of the conductive layer 3 is 30 to 100 μm.
In a more preferred embodiment, the thickness of the barrier layer 5 is 50 to 500nm.
In a more preferred embodiment, the thickness of the pre-plated solder layer 6 is 3 to 6 μm.
The thickness of the active solder layer 2, the conductive layer 3, the barrier layer 5 and the pre-plated solder layer 6 ensures better heat conduction capability of the substrate.
In a more preferred embodiment, the mass fraction of Au in the pre-plated solder layer 6 is 70% to 80%.
The invention adopts the active metal brazing process to realize the close connection of the high-heat-conductivity ceramic substrate and the copper layer, ensures the good heat conduction capability and reliability of the substrate and is beneficial to preparing finer circuit patterns. Meanwhile, the gold-tin solder with the micron-sized thickness pre-plated on the surface of the substrate can reduce the height of a welding point so as to reduce the thermal resistance of a system on one hand, and can complete two times of welding by utilizing the solder pre-plated on the substrate on the other hand, thereby simplifying the welding process, being beneficial to realizing the packaging automation and improving the production efficiency.
Example 2:
the embodiment provides a specific application example of the high thermal conductivity package substrate in embodiment 1, and specifically is a method for preparing a package substrate for a high power laser, including the following steps:
1) Respectively stacking Ag70Cu28Ti2 alloy sheets (with the thickness of 30 mu m) and copper foils (with the thickness of 100 mu m) on the two side surfaces of the aluminum nitride ceramic sheet (with the thickness of 0.35 mm) in sequence, and then placing the aluminum nitride ceramic sheet, the copper foils and the copper foils into a vacuum brazing furnace for brazing to form a wholeOverall, the process conditions are as follows: degree of vacuum 1 x 10 -5 ~1*10 -3 Pa, the temperature is 850-950 ℃;
2) Mechanically grinding the brazed copper foil surface of the substrate to ensure that the surface roughness Ra is less than or equal to 0.3 mu m and the flatness error value is less than or equal to 5 mu m;
3) Chemically etching the substrate according to a substrate circuit drawing, and corroding to remove redundant active solder and copper foil on the aluminum nitride ceramic chip;
4) Sequentially electroplating a Ni layer and an Au layer on the surface of the copper foil, wherein the thickness of the Ni layer is more than or equal to 1 mu m, and the thickness of the Au layer is more than or equal to 0.5 mu m;
5) Sequentially depositing Pt and gold-tin alloy on the surface of the Au layer on one side of the aluminum nitride ceramic wafer by adopting a vacuum coating process, wherein the thickness of the Pt layer is 500nm, the thickness of the gold-tin alloy layer is 6 mu m, and the process conditions are as follows: degree of vacuum 1 x 10 -4 ~5*10 -3 Pa, the deposition rate of a Pt layer is 1 to 5A/s, and the deposition rate of a gold-tin alloy is 1 to 5A/s;
6) And continuously depositing gold-tin alloy on the surface of the Au layer on the other side of the aluminum nitride ceramic wafer by adopting a vacuum coating process, wherein the thickness of the gold-tin alloy layer is 6 mu m, and the process conditions are as follows: vacuum degree 1 x 10 -4 ~5*10 -3 Pa, the deposition rate of the gold-tin alloy is 1 to 5A/s;
7) And mechanically cutting the finished product prepared in the step 6) by using a precision scribing machine or a laser scribing machine according to the substrate drawing.
Example 3:
similar to embodiment 2, in this embodiment, a method for manufacturing a package substrate for a high power laser includes the following steps:
1) Respectively stacking an Ag70Cu28Ti2 alloy sheet (with the thickness of 10 mu m) and a copper foil (with the thickness of 30 mu m) on the two side surfaces of the aluminum nitride ceramic sheet (with the thickness of 0.35 mm) in sequence, and then putting the aluminum nitride ceramic sheet, the copper foil and the copper foil into a vacuum brazing furnace for brazing to connect the three into a whole, wherein the process conditions are as follows: vacuum degree of 1 × 10-5 to 1 × 10-3Pa, and temperature of 850 to 950 ℃;
2) Mechanically grinding the brazed copper foil surface of the substrate to ensure that the surface roughness Ra is less than or equal to 0.3 mu m and the flatness error value is less than or equal to 5 mu m;
3) Chemically etching the substrate according to a substrate circuit drawing, and corroding to remove redundant active solder and copper foil on the aluminum nitride ceramic chip;
4) Sequentially electroplating a Ni layer and an Au layer on the surface of the copper foil, wherein the thickness of the Ni layer is more than or equal to 1 mu m, and the thickness of the Au layer is more than or equal to 0.5 mu m;
5) Depositing Pt and a gold-tin alloy on the surface of the Au layer on one side of the aluminum nitride ceramic wafer in sequence by adopting a vacuum coating process, wherein the thickness of the Pt layer is 50nm, the thickness of the gold-tin alloy layer is 3 mu m, and the process conditions are as follows: vacuum degree is 1X 10-4 to 5X 10-3Pa, deposition rate of a Pt layer is 1 to 5A/s, and deposition rate of a gold-tin alloy is 1 to 5A/s;
6) And continuously depositing gold-tin alloy on the surface of the Au layer on the other side of the aluminum nitride ceramic wafer by adopting a vacuum coating process, wherein the thickness of the gold-tin alloy layer is 3 mu m, and the process conditions are as follows: vacuum degree is 1X 10-4 to 5X 10-3Pa, and deposition rate of the gold-tin alloy is 1 to 5A/s;
7) And mechanically cutting the finished product prepared in the step 6) by using a precision scribing machine or a laser scribing machine according to the substrate drawing.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (10)
1. The high-thermal-conductivity packaging substrate is characterized by comprising a base material (1), wherein an active solder layer (2), a conductive layer (3), an electroplated layer (4), a barrier layer (5) and a pre-plated solder layer (6) are sequentially stacked and covered on one side surface of the base material (1) from inside to outside, and the active solder layer (2), the conductive layer (3), the electroplated layer (4) and the pre-plated solder layer (6) are sequentially stacked and covered on the other side surface of the base material (1) from inside to outside;
the base material (1) is made of one of aluminum nitride and aluminum oxide;
the active solder layer (2) is made of a ternary alloy consisting of Ti, ag and Cu;
the conducting layer (3) is made of Cu;
the electroplated layer (4) sequentially comprises a Ni layer and an Au layer;
the barrier layer (5) is made of Pt;
the pre-plated solder layer (6) is made of binary alloy consisting of Au and Sn.
2. The package substrate with high thermal conductivity as claimed in claim 1, wherein the thickness of the active solder layer (2) is 10 to 30 μm.
3. The packaging substrate with high thermal conductivity as claimed in claim 1, wherein the thickness of the conductive layer (3) is 30 to 100 μm.
4. The packaging substrate with high thermal conductivity as claimed in claim 1, wherein the thickness of the barrier layer (5) is 50 to 500nm.
5. The package substrate with high thermal conductivity as claimed in claim 1, wherein the thickness of the pre-plated solder layer (6) is 3 to 6 μm.
6. The high thermal conductivity package substrate as claimed in claim 1, wherein the mass fraction of Au in the pre-plated solder layer (6) is 70% to 80%.
7. A method for preparing the high thermal conductivity package substrate according to claim 1, comprising the steps of:
s1, respectively stacking active solder and copper foil on the surfaces of two sides of a base material (1) in sequence, and connecting the active solder and the copper foil into a whole by adopting a vacuum brazing process;
s2, grinding the surface of the copper foil;
s3, etching the substrate according to the substrate circuit drawing, and removing redundant active solder and copper foil on the base material (1);
s4, sequentially electroplating a Ni layer and an Au layer on the surface of the copper foil;
s5, depositing Pt and a gold-tin alloy on the Au layer on one side of the base material (1) in sequence by adopting a vacuum coating process;
s6, depositing gold-tin alloy on the Au layer on the other side of the substrate (1) by adopting a vacuum coating process;
and S7, dividing the finished product obtained in the step S6 according to a substrate drawing.
8. The method for preparing a high thermal conductivity package substrate according to claim 7, wherein the conditions of the vacuum brazing process are as follows: vacuum degree of 1 x 10 -5 ~1*10 -3 Pa, and the temperature is 800 to 1000 ℃.
9. The method for manufacturing a high thermal conductivity package substrate as claimed in claim 7, wherein the roughness Ra of the surface of the copper foil is less than or equal to 0.3 μm and the flatness error value is less than or equal to 5 μm after the step S2 is performed to the surface of the copper foil.
10. The method for preparing a high thermal conductivity packaging substrate according to claim 7, wherein the vacuum coating conditions are as follows: vacuum degree of 1 x 10 -4 ~5*10 -3 Pa, the deposition rate is 1 to 10A/s.
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| CN113088289A (en) * | 2021-03-30 | 2021-07-09 | 华中科技大学 | Etching solution, application thereof and preparation method of high-bonding-strength metal layer on ceramic surface |
| CN113314473A (en) * | 2021-05-26 | 2021-08-27 | 绍兴德汇半导体材料有限公司 | Ceramic substrate graphical structure and manufacturing method thereof |
| CN115028477A (en) * | 2022-06-15 | 2022-09-09 | 深圳元点真空装备有限公司 | DSC ceramic metallization technology and ceramic packaging substrate prepared by same |
| CN115442958A (en) * | 2021-06-02 | 2022-12-06 | 上村工业株式会社 | Multilayer coating film |
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| CN1934688A (en) * | 2004-03-24 | 2007-03-21 | 德山株式会社 | Substrate for bonding element and method of manufacturing the same |
| CN101182642A (en) * | 2007-12-18 | 2008-05-21 | 长春理工大学 | Method of electroplating combined vacuum coating preparing Au-Sn alloy solder |
| CN113088289A (en) * | 2021-03-30 | 2021-07-09 | 华中科技大学 | Etching solution, application thereof and preparation method of high-bonding-strength metal layer on ceramic surface |
| CN113314473A (en) * | 2021-05-26 | 2021-08-27 | 绍兴德汇半导体材料有限公司 | Ceramic substrate graphical structure and manufacturing method thereof |
| CN115442958A (en) * | 2021-06-02 | 2022-12-06 | 上村工业株式会社 | Multilayer coating film |
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