CN116884854A - Method for prefabricating solder layer on ceramic substrate microstructure - Google Patents
Method for prefabricating solder layer on ceramic substrate microstructure Download PDFInfo
- Publication number
- CN116884854A CN116884854A CN202310879854.0A CN202310879854A CN116884854A CN 116884854 A CN116884854 A CN 116884854A CN 202310879854 A CN202310879854 A CN 202310879854A CN 116884854 A CN116884854 A CN 116884854A
- Authority
- CN
- China
- Prior art keywords
- solder
- ceramic substrate
- ring
- treatment
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 314
- 239000000758 substrate Substances 0.000 title claims abstract description 76
- 239000000919 ceramic Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000010438 heat treatment Methods 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims description 97
- 229910052751 metal Inorganic materials 0.000 claims description 97
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 47
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 46
- 238000002844 melting Methods 0.000 claims description 40
- 230000008018 melting Effects 0.000 claims description 40
- 238000011282 treatment Methods 0.000 claims description 40
- 238000001816 cooling Methods 0.000 claims description 36
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 14
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000013532 laser treatment Methods 0.000 claims description 6
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 6
- -1 polyoxyethylene stearate Polymers 0.000 claims description 6
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 6
- DAJSVUQLFFJUSX-UHFFFAOYSA-M sodium;dodecane-1-sulfonate Chemical compound [Na+].CCCCCCCCCCCCS([O-])(=O)=O DAJSVUQLFFJUSX-UHFFFAOYSA-M 0.000 claims description 5
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000012756 surface treatment agent Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000002378 acidificating effect Effects 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 238000007709 nanocrystallization Methods 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- HFQQZARZPUDIFP-UHFFFAOYSA-M sodium;2-dodecylbenzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCC1=CC=CC=C1S([O-])(=O)=O HFQQZARZPUDIFP-UHFFFAOYSA-M 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 8
- 238000003466 welding Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010931 gold Substances 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 description 21
- 238000001035 drying Methods 0.000 description 19
- 239000011521 glass Substances 0.000 description 16
- 239000007788 liquid Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 14
- 229910052718 tin Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 239000004094 surface-active agent Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 238000004381 surface treatment Methods 0.000 description 7
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 239000002086 nanomaterial Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 231100001010 corrosive Toxicity 0.000 description 4
- 238000005554 pickling Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000005660 hydrophilic surface Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The application provides a method for prefabricating a solder layer on a ceramic substrate microstructure, which comprises the steps of firstly preparing a solder ring, a solder sheet, a ceramic substrate with a surface gold plating layer box dam and a pin header, then adopting a die for alignment, placing the solder ring and the solder sheet on the top surfaces of the ceramic substrate box dam and the pin header, and adopting an infrared rapid heating technology to enable the solder ring and the solder sheet to be spread on the top surfaces of the box dam and the pin header after being melted, so as to prepare the ceramic substrate containing the prefabricated solder layer. The method has the advantages of high heating speed, non-contact heating and the like by adopting infrared heating, and the solder layer is prefabricated on the top surface of the box dam or the pin header by utilizing the self-alignment effect after the solder is melted, so that the subsequent airtight packaging welding requirement is met.
Description
Technical Field
The application relates to the field of electronic component packaging, in particular to a method for prefabricating a solder layer on a ceramic substrate microstructure.
Background
In order to meet the requirements of multilayer stacking and airtight packaging of electroplated ceramic substrates (DPC), a copper dam and a metal solder layer are prefabricated on the top surface of a pin header are electroplated on the DPC ceramic substrates, so that welding between the substrates can be realized after heating and melting are facilitated.
The conventional method for preparing the solder layer on the top surfaces of the DPC ceramic substrate dam and the pin header at present comprises the following steps: 1) The evaporation and sputtering coating method is used for prefabricating a solder layer on the top surfaces of the box dams and the row pins, but the thickness is limited, generally only 3-5um, the problem that the subsequent welding is unstable and the air tightness is poor is possibly caused by small solder layer thickness, and the preparation method has the advantages of high cost, small deposited effective area and low material utilization rate; 2) The pattern electroplating method adopts a pattern electroplating technology to deposit a solder layer on the top surfaces of the dam and the pin header, has great technical difficulty, is only suitable for depositing the solder layer on a planar substrate, has high preparation cost and limited application range; 3) The solder paste coating method has low coating efficiency by coating the solder paste on the top surfaces of the box dam and the pin header, and the coating process is difficult to be accurately aligned with the microstructure, so that the solder overflows, a circuit is polluted, and the thickness of a solder layer is uneven; 4) The soldering lug method adopts a laser spot welding or hot pressing method to fix the soldering lug on the top surface of the microstructure, and the method also requires high alignment precision, namely requires the soldering lug to be completely aligned with the surface of the microstructure, otherwise, the soldering lug overflows after melting to pollute a circuit, and the method is generally only suitable for a metal box dam and is not suitable for a pin header structure.
The prior art CN114883274A discloses an airtight packaging cover plate for prefabricating gold-tin solder rings and a preparation method thereof, and the cover plate provided by the method prefabricates gold-tin solder and a gold-plated cover plate to form the cover plate containing the gold-tin solder rings, so that a series of problems of low packaging efficiency, low packaging yield, low appearance and reliability after packaging and the like caused by independent solder and independent cover plates in the prior art can be well solved. However, the technology is to prefabricate a gold-tin solder sheet on a gold-plated cover plate, and adopt a laser spot welding technology, so that the alignment requirement on the solder sheet and the gold-plated cover plate is very high, otherwise, dislocation is generated between the solder sheet and the gold-plated cover plate, so that the solder overflows after being melted, and a circuit is polluted.
Disclosure of Invention
In order to solve the problems in the prior art, the application provides a method for prefabricating a solder layer on a ceramic substrate microstructure, which adopts a surface treatment microstructure and an infrared heating solder melting self-alignment effect, can realize alignment of the solder layer and the microstructure, solves the problems of overflow of the solder and high alignment requirement, and solves the problems of high preparation cost, narrow application range, high alignment requirement, overflow of the solder and the like in the prior art, wherein the microstructure comprises but is not limited to a metal surrounding dam and a pin header.
The method provided by the application comprises the steps of preparing a solder ring and a solder sheet respectively, aligning a die on a ceramic substrate with a surface gold plating layer dam and a pin header, placing the solder ring and the solder sheet on the top surfaces of the ceramic substrate dam and the pin header, and melting the solder ring and the solder sheet on the top surfaces of the dam and the pin header by adopting an infrared rapid heating technology to prepare the ceramic substrate containing the prefabricated solder layer. The method has the advantages of quick heating and non-contact heating by adopting infrared heating, and the solder layer is prefabricated on the top surface of the box dam or the pin header by utilizing the self-alignment effect after the solder is melted, so that the subsequent airtight packaging welding requirement is met.
The application provides a method for prefabricating a solder layer on a ceramic substrate microstructure, which comprises the following steps:
step 1, preparing a solder ring and a solder sheet respectively;
step 2, carrying out hydrophilic treatment on the top surface of the microstructure of the ceramic substrate;
step 3, aligning the solder ring and the solder sheet with the top surface of the microstructure in the step 2 respectively, and then melting the solder ring and the solder sheet by adopting an infrared heating process;
and 4, cooling to obtain the prefabricated solder layer on the microstructure of the ceramic substrate.
Such microstructures include, but are not limited to, metal dams and pin bars.
Further, the solder rings and solder sheets are prepared by conventional methods such as, but not limited to, heating and melting the solder, then injecting the solder into a mold having a shape and thickness, and cooling to form a ring, i.e., a solder ring, or a sheet, which may be divided into desired shapes including circular, square, diamond, and other geometric shapes.
Further, the hydrophilic treatment in the step 2 is a coating surface treating agent, acid etching, plasma treatment or laser treatment.
Further, the surface treating agent used for the surface treating agent is one or more of cetyltrimethylammonium bromide (CTAB), cetyltrimethylammonium bromide (C16 TAB), sodium Dodecyl Sulfate (SDS), sodium dodecyl sulfate (SDBS) and polyoxyethylene stearate.
The surface treating agent is coated on the surface of the metal box dam to realize hydrophilic treatment, and the following specific method can be adopted:
surface cleaning: firstly, cleaning the surface of the metal box dam, removing greasy dirt, corrosives, oxide layers and impurities, and cleaning by using an organic solvent, an alkaline detergent or a corrosive solution.
And (3) surfactant coating: the surfactant suitable for the surface treatment of the metal is selected, namely, the surface treatment agent is adopted. The selected surfactant is dissolved in a proper solvent and is coated on the surface of the metal surrounding dam by brushing, spraying, dipping and the like, so that the surfactant can uniformly cover the whole metal surface.
And (3) drying: after the surfactant coating is completed, proper drying treatment is carried out to form a stable film layer on the surfactant. Drying may be performed by natural drying, heating, or air purging, etc.
Further, the acid adopted by the acid corrosion treatment is one or more of 5-10wt% of dilute sulfuric acid, 5-10wt% of dilute hydrochloric acid and 10-20wt% of dilute phosphoric acid. The acid corrosion treatment of the surface of the metal box dam can adopt the following specific steps:
surface cleaning: firstly, cleaning the surface of the metal box dam, removing greasy dirt, corrosives, oxide layers and impurities, and cleaning by using an organic solvent, an alkaline detergent or a corrosive solution.
Acid washing: and selecting an acid solution suitable for metal corrosion to carry out acid washing treatment. The acid solution is the acid solution, the selected acid solution is poured into a pickling tank, and the metal box dam is immersed into the tank for pickling, and the time can be determined according to the metal materials and the requirements. The pickling process can improve the effect by stirring, heating and the like.
Cleaning: and after the pickling is finished, taking out the ceramic substrate containing the metal retaining dams, and fully flushing with clear water to remove acid liquor residues.
And (3) neutralization treatment: the surface of the metal dam after acid washing becomes acidic, and neutralization treatment is required to prevent continuous corrosion. Neutralization may be performed using an alkaline solution (e.g., dilute sodium hydroxide solution) to restore the metal surface to neutral or alkaline.
Further, the plasma treatment is a plasma oxidation method, and oxygen plasma is utilized to treat the metal surface to form an oxide film on the surface, so that the hydrophilicity of the metal surface is improved.
Further, the laser treatment is one of laser nanocrystallization treatment and laser surface oxidation treatment. Furthermore, the laser nanostructured treatment is to form a micro-nano structure on the metal surface by laser action, so as to increase the specific surface area of the surface, thereby improving the surface hydrophilicity. If laser is applied to the surface of the alloy, the generated micro-nano structure can increase the hydrophilicity.
The laser nanostructured process can use a variety of lasers, including: 1) Femtosecond laser (femto-laser): the femtosecond laser has extremely short pulse width and high peak power, can generate instant high energy density on the metal surface, and induces nonlinear optical effect of the material, thereby forming a nanoscale structure; 2) Nd: YAG laser (Neodymium-dopedytritumaluminum gamnetlaser): YAG laser is a common solid laser, can provide higher power and energy density, is suitable for carrying out nano-structure treatment on the metal surface, and has the wavelength of 1064nm; 3) Xenon ion laser (xenonion laser): the laser wavelength output by the xenon ion laser is shorter, the energy density is higher, and the method is suitable for carrying out nano structure treatment on the metal surface; 4) CO2 laser: has longer wavelength and relatively lower energy density, and is suitable for the fine structuring treatment of metal surfaces.
Further, the laser surface oxidation treatment is to heat the metal surface by laser to oxidize it to form an oxide layer, thereby increasing the surface hydrophilicity. If the surface of the alloy is processed by laser, an iron oxide layer is formed, so that the surface of the alloy has better hydrophilicity. Laser surface oxidation is a process that utilizes laser radiation to produce an oxide layer on the surface of a material. The specific process comprises the following steps: firstly, preparing a material to be treated; cleaning a surface: cleaning the surface of the material, removing attachments and oxide layers, and ensuring the surface to be clean; laser irradiation: a suitable laser is selected to irradiate the surface of the material. Common lasers include Nd-YAG lasers, femtosecond lasers, and the like. The irradiation needs to control the parameters of laser such as power, energy, pulse width, scanning speed and the like so as to achieve the required oxidation effect. Further treatments of the oxide layer, such as cleaning, polishing, sealing, etc., may enhance the adhesion, sealing, and corrosion resistance of the oxide layer. Further, for oxidation of the metal surface, a Nd: YAG laser or a femtosecond laser may be generally selected for treatment. YAG laser has higher power and energy density, and is suitable for producing uniform and compact oxide layers; the femtosecond laser has extremely short pulse width and high peak power, is suitable for generating a high-quality oxide layer, and can realize fine nanostructure control.
The hydrophilic treatment of the top surfaces of the metal box dams and the pin headers belongs to a key process in the method provided by the application, and the solder can be spread on the top surfaces of the metal box dams or the pin headers after being melted only by subsequent infrared heating treatment after the hydrophilic treatment of the surface, so that the prefabricated solder layers are completely aligned, and the solder is prevented from leaking out, polluting circuits and the like.
Further, in the step 3, the infrared heater adopted in the infrared heating process is a quartz glass tube. The application adopts infrared heating, has the characteristics of high heating speed, non-contact heating and the like, and the surface treatment ensures that the solder is completely spread after being melted, thereby meeting the alignment requirement of a prefabricated solder layer.
Further, the thickness of the solder ring and the solder sheet in the step 1 is 20 to 30 μm, and more preferably 25 to 30 μm.
Further, the thickness of the solder preform layer is 10-20um, more preferably 15-20 um.
Further, the solder rings and the solder sheets are made of gold-tin alloy 80% Au20% Sn, lead-tin alloy and tin-silver-copper alloy.
Advantageous technical effects
The method provided by the application comprises the steps of firstly preparing a solder ring, a solder sheet and a ceramic substrate with a microstructure (a box dam and a pin array) of a surface gold plating layer, then adopting a mould for alignment, placing the solder ring and the solder sheet on the top surfaces of the box dam and the pin array of the ceramic substrate, and adopting an infrared rapid heating technology to enable the solder ring and the solder sheet to be spread on the top surfaces of the box dam and the pin array after being melted, so as to prepare the ceramic substrate containing the prefabricated solder layer. The method adopts infrared heating, has the advantages of quick temperature rise and non-contact heating, and the surface treatment leads the solder to be completely spread after being melted, thereby meeting the requirements of alignment of a prefabricated solder layer and subsequent airtight packaging.
The surface hydrophilic treatment of the microstructure (the metal box dam and the pin array) of the ceramic substrate belongs to a key process in the method provided by the application, and only after the surface hydrophilic treatment is carried out, the subsequent infrared heating treatment can lead the solder to be spread on the top surface of the metal box dam or the pin array after being melted (self-alignment effect), thereby leading the prefabricated solder layer to be completely aligned and preventing the solder from leaking out, polluting circuits and the like.
Drawings
FIG. 1 is a schematic illustration of the preparation method of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the following examples and fig. 1 of the specification. Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application. It is to be understood that the following description is intended to be illustrative of the application and not restrictive.
The terms "comprising," "including," "having," "containing," or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a composition, step, method, article, or apparatus that comprises a list of elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, step, method, article, or apparatus.
The phrase "consisting of …" excludes any unspecified element, step or component. If used in a claim, such phrase will cause the claim to be closed, such that it does not include materials other than those described, except for conventional impurities associated therewith. When the phrase "consisting of …" appears in a clause of the claim body, rather than immediately following the subject, it is limited to only the elements described in that clause; other elements are not excluded from the stated claims as a whole.
When an equivalent, concentration, or other value or parameter is expressed as a range, preferred range, or a range bounded by a list of upper preferable values and lower preferable values, this is to be understood as specifically disclosing all ranges formed from any pair of any upper range limit or preferred value and any lower range limit or preferred value, regardless of whether ranges are separately disclosed. For example, when ranges of "1 to 5" are disclosed, the described ranges should be construed to include ranges of "1 to 4", "1 to 3", "1 to 2 and 4 to 5", "1 to 3 and 5", and the like. When a numerical range is described herein, unless otherwise indicated, the range is intended to include its endpoints and all integers and fractions within the range.
In some examples, the approximating language may correspond to the precision of an instrument for measuring the value. In the description and claims of the application, the range limitations may be combined and/or interchanged, if not otherwise specified, including all the sub-ranges subsumed therein.
The indefinite articles "a" and "an" preceding an element or component of the application are not limited to the requirement (i.e. the number of occurrences) of the element or component. Thus, the use of "a" or "an" should be interpreted as including one or at least one, and the singular reference of an element or component includes the plural reference unless the amount clearly dictates otherwise.
The description of the terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., herein describe means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, schematic representations of the above terms are not necessarily for the same embodiment or example. The technical features of the respective embodiments of the present application may be combined with each other as long as they do not collide with each other.
The materials and equipment used in the present application are commercially available or are those commonly used in the art, and the methods described in the examples are those commonly used in the art unless otherwise specified.
The application provides a method for prefabricating a solder layer on a ceramic substrate microstructure, which is shown in a figure 1 of the specification, and comprises the following steps:
step 1, preparing a metal solder ring and a solder sheet respectively;
step 2, hydrophilic surface treatment is carried out on the microstructure (the metal box dam and the pin header) of the ceramic substrate;
step 3, aligning the solder ring and the solder sheet with the metal dam and the row in the step 2 respectively, and then melting the solder ring and the solder sheet by adopting an infrared heating process;
and 4, cooling to obtain the prefabricated solder layer on the microstructure of the ceramic substrate.
In some embodiments, the hydrophilic surface treatment in step 2 is a coated surface treatment, acid etching, plasma treatment, or laser treatment.
In some embodiments, the coating surface treatment agent employs one or more of cetyltrimethylammonium bromide (CTAB), cetyltrimethylammonium bromide salt (C16 TAB), sodium Dodecyl Sulfonate (SDS), sodium dodecyl sulfonate (SDBS), polyoxyethylene stearate.
In some embodiments, the acidic corrosion treatment employs a solution of one or more of 5wt% to 10wt% dilute sulfuric acid, 5wt% to 10wt% dilute hydrochloric acid, and 10wt% to 20wt% dilute phosphoric acid.
In some embodiments, the plasma treatment is a plasma oxidation process, wherein oxygen plasma is used to treat the stainless steel surface to form an oxide film, thereby improving the hydrophilicity of the oxide film.
In some embodiments, the laser treatment is one of a laser nanocrystallization treatment and a laser surface oxidation treatment.
In some embodiments, in the step 3, the infrared heater used in the infrared heating process is a quartz glass tube.
In some embodiments, the solder ring and solder sheet thickness in step 1 is 20-30um.
In some embodiments, the pre-solder layer has a thickness of 10-20um.
In some embodiments, the solder ring and solder sheet material is gold-tin alloy 80% au20% sn, lead-tin alloy, tin-silver-copper alloy.
Examples will be given below in connection with specific embodiments.
Example 1
Heating and melting 80% of Au20% of Sn in a gold-tin alloy solder, injecting the molten gold-tin alloy solder into a mold with a certain shape and thickness, cooling the molten gold-tin alloy solder into a ring shape, namely a solder ring or a sheet shape, obtaining the thickness of the solder ring and the solder sheet to be 25.3 mu m, taking a ceramic substrate with a metal box dam and a pin array fixed on the surface, carrying out laser oxidation treatment on the top surfaces of the metal box dam and the pin array in an air atmosphere by adopting an Nd-YAG laser, cleaning and drying the ceramic substrate, aligning the solder ring and the solder sheet with the metal box dam and the pin array respectively in the mold, melting the solder by adopting an infrared heating process, preserving the heat for 10min to spread and self-align the solder liquid, and cooling the ceramic substrate to obtain a 16.2 mu m thick solder layer. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. And (3) carrying out heating, melting and sealing with a matched metal cover plate, and carrying out air tightness test on the packaged product by using a thermal shock method. Thermal shock test was conducted under test conditions B (10 times, -55 ℃ C. To +125 ℃ C.) of method 1011.1 in GJB548C-2021 microelectronic device test method and program, and the test results are shown in Table 1.
Example 2
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 25.0 mu m; and (3) spraying a hexadecyl trimethyl ammonium bromide (CTAB) solution on the top surfaces of the metal box dams and the pin headers, drying, aligning a solder ring and a solder sheet with the metal box dams and the pin headers respectively in a mold, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a solder layer with the thickness of 15.1 mu m. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 3
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 25.0 mu m; and (3) taking a ceramic substrate with a metal box dam and a pin header fixed on the surface, carrying out plasma oxidation on the surfaces of the metal box dam and the pin header by adopting a low-temperature plasma oxidation method, then aligning a solder ring and a solder sheet with the metal box dam and the pin header respectively in a die, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a solder layer with the thickness of 15.1 mu m. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 4
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 25.3 mu m; and (3) chemically corroding the surfaces of the metal dams and the pins on the ceramic substrate, cleaning and drying, aligning the solder rings and the solder sheets with the metal dams and the pins in a mold, melting the solder by an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a solder layer with the thickness of 15.1 mu m. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 5
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 25.1 mu m; and (3) taking a ceramic substrate with a metal box dam and a pin header fixed on the surface, carrying out ultrasonic cleaning and drying, respectively aligning a solder ring and a solder sheet with the metal box dam and the pin header in a die, adopting an infrared heating process to melt the solder, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain solder balls with different diameters. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 6
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 25.3 mu m; YAG laser is adopted to carry out laser oxidation treatment on the surfaces of the metal box dams and the pin bars in the air, after cleaning and drying, a solder ring and a solder sheet are aligned with the metal box dams and the pin bars respectively in a die, the solder is melted by adopting an infrared heating process, the heat is preserved for 10min to spread and self-align the solder liquid, and a solder layer with the thickness of 15.1 mu m is obtained after cooling. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 7
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, so as to obtain the solder ring and the solder sheet with the thickness of 18.0 mu m; and (3) taking a ceramic substrate with a metal box dam and a pin array fixed on the surface, carrying out laser oxidation treatment on the surfaces of the metal box dam and the pin array on the substrate in air by adopting an Nd-YAG laser, cleaning and drying, respectively aligning a solder ring and a solder sheet with the metal box dam and the pin array in a mould, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a solder layer with the thickness of 9.2 mu m. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 8
Heating and melting 80% of gold-tin alloy (Au20%) Sn solder, injecting into a mold with a certain shape and thickness, cooling to form a ring, namely a solder ring or a sheet, obtaining the thickness of the solder ring and the solder sheet to be 20.1 mu m, taking a substrate with a metal box dam and a pin array fixed on the surface of a ceramic substrate, carrying out laser oxidation treatment on the surfaces of the metal box dam and the pin array on the substrate in an air atmosphere by using an Nd: YAG laser, cleaning and drying, aligning the solder ring and the solder sheet with the metal box dam and the pin array respectively in the mold, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a solder layer with the thickness of 10.2 mu m. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 9
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 30.0 mu m; and (3) taking a ceramic substrate with a metal box dam and a pin array fixed on the surface, carrying out laser oxidation treatment on the surfaces of the metal box dam and the pin array on the substrate in air by adopting an Nd-YAG laser, cleaning and drying, respectively aligning a solder ring and a solder sheet with the metal box dam and the pin array in a mould, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a solder layer with the thickness of 20.2 mu m. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 10
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 35.2 mu m; and (3) taking a ceramic substrate with a metal box dam and a pin array fixed on the surface, carrying out laser oxidation treatment on the surfaces of the metal box dam and the pin array on the substrate in air by adopting an Nd-YAG laser, cleaning and drying, respectively aligning a solder ring and a solder sheet with the metal box dam and the pin array in a mould, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a 23.2 mu m thick solder layer. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 11
Heating and melting 63% Pb37Sn of lead-tin solder, then injecting the lead-tin solder into a mold with a certain shape and thickness, and cooling the lead-tin solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 25.3 mu m; and (3) taking a ceramic substrate with a metal box dam and a pin array fixed on the surface, carrying out laser oxidation treatment on the surfaces of the metal box dam and the pin array on the substrate in air by adopting an Nd-YAG laser, cleaning and drying, respectively aligning a solder ring and a solder sheet with the metal box dam and the pin array in a mould, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a solder layer with the thickness of 15.2 mu m. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 12
Heating and melting tin-silver-copper solder, then injecting the molten tin-silver-copper solder into a mold with a certain shape and thickness, and cooling the molten tin-silver-copper solder into a ring shape, namely a solder ring or a sheet shape, so as to obtain a solder ring and a solder sheet with the thickness of 25.3 mu m; and (3) taking a ceramic substrate with a metal box dam and a pin array fixed on the surface, carrying out laser oxidation treatment on the surfaces of the metal box dam and the pin array on the substrate in air by adopting an Nd-YAG laser, cleaning and drying, respectively aligning a solder ring and a solder sheet with the metal box dam and the pin array in a mould, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a solder layer with the thickness of 15.6 mu m. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 13
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 25.0 mu m; and (3) taking a ceramic substrate with a metal box dam and a pin header fixed on the surface, spraying a Sodium Dodecyl Sulfate (SDS) solution on the surfaces of the metal box dam and the pin header on the substrate, drying, aligning a solder ring and a solder sheet with the metal box dam and the pin header respectively in a die, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a solder layer with the thickness of 15.4 mu m. And observing whether the solder layer overflows to the outer edges of the metal box dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 14
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 25.0 mu m; and (3) taking a ceramic substrate with a metal box dam and a pin header fixed on the surface, spraying a polyoxyethylene stearate solution on the surfaces of the metal box dam and the pin header on the substrate, drying, aligning a solder ring and a solder sheet with the metal box dam and the pin header respectively in a mold, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a solder layer with the thickness of 15.7 mu m. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 15
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 25.3 mu m; and (3) chemically corroding the surfaces of the metal dams and the pins on the ceramic substrate, which is fixed with the metal dams and the pins on the surface, by adopting a 15wt% dilute hydrochloric acid solution, cleaning and drying, aligning a solder ring and a solder sheet with the metal dams and the pins respectively in a mould, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a solder layer with the thickness of 15.2 mu m. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Example 16
Heating and melting 80% of Au20% Sn of the gold-tin alloy solder, then injecting the gold-tin alloy solder into a mold with a certain shape and thickness, and cooling the gold-tin alloy solder to form a ring, namely a solder ring or a sheet, thereby obtaining a solder ring and a solder sheet with the thickness of 25.3 mu m; and (3) chemically corroding the surfaces of the metal dams and the pins on the ceramic substrate, cleaning and drying, aligning the solder rings and the solder sheets with the metal dams and the pins in a mold, melting the solder by adopting an infrared heating process, preserving heat for 10min to spread and self-align the solder liquid, and cooling to obtain a 14.5 mu m thick solder layer. And observing whether the solder overflows to the outer edges of the metal dams and the pin headers or the ceramic substrate by using a magnifying glass. The method of example 1 was used to test the air tightness and reliability.
Table 1 example product experimental parameters and performance comparisons
From the data of examples 1-5, the data of examples 1 and 5-6 show that the application can realize solder spreading and self-alignment only by carrying out hydrophilic treatment on the top surface of a metal dam or a pin header and adopting infrared heating and melting, does not cause solder overflow, and can ensure good air tightness after welding.
The data in example 2 shows that the surfactant application also enables self-alignment without solder overflow; however, the final solder layer has a smaller thickness, mainly because the coated surfactant is partially degraded when heated, and correspondingly, the post-soldering air tightness is poor compared with other pre-treatment products.
The data of examples 1, 7-10 show that the solder ring or solder sheet thickness has a significant effect on whether solder overflow or hermeticity occurs. Under proper thickness of solder ring/sheet, the method of the application can not generate overflow, and can be well spread and self-aligned; however, the solder layer formed is thinner due to the excessively low solder thickness, which is unfavorable for airtight packaging; when the thickness is too high, too much solder solution is heated and melted, which affects self-alignment and also causes some solder to overflow, thereby affecting air tightness.
The data of examples 1, 11-12 show that the application is applicable to different types of solders, and can achieve the object of the application.
The data of examples 2, 13-14 show that the application of different surfactants can achieve the inventive object of the present application.
The data of examples 4, 15-16 show that dilute acid treatments at different concentrations can achieve the objectives of the present application.
The above is merely a preferred embodiment of the present application, and is not intended to limit the present application. Although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. A method of prefabricating a solder layer on a ceramic substrate microstructure comprising the steps of:
step 1, preparing a metal solder ring and a solder sheet respectively;
step 2, carrying out hydrophilic treatment on the top surface of the microstructure of the ceramic substrate;
step 3, aligning the metal solder ring and the solder sheet with the top surface of the microstructure in the step 2 respectively, and then melting the solder ring and the solder sheet by adopting an infrared heating process;
step 4, after cooling, obtaining a prefabricated solder layer on the ceramic substrate microstructure;
the microstructure is a metal box dam and/or a pin header.
2. The method of claim 1, wherein the hydrophilic treatment in step 2 is a surface treatment agent coating, acid etching, plasma treatment, or laser treatment.
3. The method of claim 2, wherein the surface treatment agent is one or more of cetyltrimethylammonium bromide (CTAB), cetyltrimethylammonium bromide (C16 TAB), sodium Dodecyl Sulfonate (SDS), sodium dodecyl sulfonate (SDBS), and polyoxyethylene stearate.
4. The method of claim 2, wherein the acidic etching is performed with a solution of one or more of 5wt% to 10wt% dilute sulfuric acid, 5wt% to 10wt% dilute hydrochloric acid, and 10wt% to 20wt% dilute phosphoric acid.
5. The method for fabricating a solder layer on a ceramic substrate microstructure according to claim 2, wherein the plasma treatment is a plasma oxidation method, and oxygen plasma is used to treat the metal surface to form an oxide film, thereby improving the hydrophilicity.
6. The method of claim 2, wherein the laser treatment is one of a laser nanocrystallization treatment and a laser surface oxidation treatment.
7. A method for prefabricating a solder layer on a ceramic substrate microstructure according to any of claims 1-6, wherein in step 3, the infrared heater used for the infrared heating is a quartz glass tube.
8. A method of prefabricating a solder layer on a ceramic substrate microstructure according to any of claims 1-6, wherein the solder rings and solder sheets in step 1 are 20-30um thick.
9. A method of prefabricating a solder layer on a ceramic substrate microstructure according to any of claims 1-6, wherein the prefabricated solder layer has a thickness of 10-20um.
10. A method of prefabricating a solder layer on a ceramic substrate microstructure according to any of claims 1-6, wherein the solder rings and solder are made of gold-tin alloy, lead-tin alloy, tin-silver-copper alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310879854.0A CN116884854A (en) | 2023-07-18 | 2023-07-18 | Method for prefabricating solder layer on ceramic substrate microstructure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310879854.0A CN116884854A (en) | 2023-07-18 | 2023-07-18 | Method for prefabricating solder layer on ceramic substrate microstructure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116884854A true CN116884854A (en) | 2023-10-13 |
Family
ID=88271147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310879854.0A Pending CN116884854A (en) | 2023-07-18 | 2023-07-18 | Method for prefabricating solder layer on ceramic substrate microstructure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116884854A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116884923A (en) * | 2023-09-07 | 2023-10-13 | 广州先艺电子科技有限公司 | Cover plate packaging structure and preparation method thereof |
-
2023
- 2023-07-18 CN CN202310879854.0A patent/CN116884854A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116884923A (en) * | 2023-09-07 | 2023-10-13 | 广州先艺电子科技有限公司 | Cover plate packaging structure and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN116884854A (en) | Method for prefabricating solder layer on ceramic substrate microstructure | |
| EP1979125B1 (en) | Process for the precision-processing of substrates by means of a laser coupled into a liquid stream | |
| EP0337658B1 (en) | Selective plating by laser ablation | |
| CN104105353B (en) | A kind of manufacture method of high-precision ceramic circuit board | |
| EP2404324A2 (en) | Front-and-back contact solar cells, and method for the production thereof | |
| CN101850472A (en) | Process method for welding aluminum and aluminum alloy material by laser | |
| JP7471011B2 (en) | A method for manufacturing highly flat metal foil material suitable for manufacturing metal masks | |
| CN113068324A (en) | Method for manufacturing circuit board by using remelting solder as weldability protective layer | |
| WO2020231643A1 (en) | Silicate glass compositions useful for the efficient production of through glass vias | |
| CN114535580A (en) | Preparation method of high-flatness metal foil suitable for manufacturing metal mask plate | |
| CN113045209A (en) | Glass through hole machining method | |
| CN111085773A (en) | Laser drilling device and method for metal film-assisted brittle material | |
| CN113909494A (en) | Preparation method of metal foil for metal mask plate and preparation method of metal mask plate | |
| KR20200140750A (en) | Method of manufacturing metal mold using the 3D printing | |
| Shin et al. | Electrochemical etching of stainless steel through laser masking | |
| CN111112842A (en) | Gold-removing tin-coating method and application | |
| Yang et al. | Excimer laser-induced formation of metallic microstructures by electroless copper plating | |
| Kim et al. | Laser-Induced metal reduction from liquid electrolyte precursor | |
| CN107225329A (en) | A kind of method for improving glass copper facing bonding strength | |
| JP4337313B2 (en) | Circuit board manufacturing method | |
| JP6458285B2 (en) | Device manufacturing method | |
| RU2433948C1 (en) | Method of laser deposition of nanoparticles from solutions | |
| Frear et al. | Fluxless soldering for microelectronic applications | |
| CN110695536B (en) | Laser processing method | |
| KR102496309B1 (en) | Method for forming plasma resistant coating layer using laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |