CN116762162A - 静电卡盘 - Google Patents
静电卡盘 Download PDFInfo
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- CN116762162A CN116762162A CN202280011188.2A CN202280011188A CN116762162A CN 116762162 A CN116762162 A CN 116762162A CN 202280011188 A CN202280011188 A CN 202280011188A CN 116762162 A CN116762162 A CN 116762162A
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- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 44
- 239000010980 sapphire Substances 0.000 claims abstract description 44
- 238000001179 sorption measurement Methods 0.000 claims abstract description 25
- 239000002156 adsorbate Substances 0.000 claims abstract description 14
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000007689 inspection Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本公开所涉及的静电卡盘包含:板状体,具有用于载置被吸附物的吸附面;基体;以及电极膜,位于板状体与基体之间。板状体以及基体由蓝宝石形成。吸附面与蓝宝石的c面所成的角为45°以上。
Description
技术领域
本公开涉及静电卡盘。
背景技术
在半导体产品的制造工序等中,使用用于吸附、保持非吸附物的静电卡盘。蓝宝石是透明的绝缘体,能够作为检查装置等要求透明性的用途的静电卡盘来使用(专利文献1)。蓝宝石与玻璃相比具有优异的耐磨损性,不易损伤。进而,蓝宝石也具有优异的耐腐蚀性,也能够用于等离子体处理装置等的基板吸附部。但是,蓝宝石具有各向异性,例如存在因面取向而吸附力不同的问题。
在先技术文献
专利文献
专利文献1:日本特开平6-291175号公报
发明内容
-用于解决课题的手段-
本公开所涉及的静电卡盘包含:具有用于载置被吸附物的吸附面板状体;基体;以及电极膜,位于板状体与基体之间。板状体以及基体由蓝宝石形成。吸附面与蓝宝石的c面所成的角为45°以上。
附图说明
图1是表示本公开的一个实施方式所涉及的静电卡盘的说明图。
图2是表示蓝宝石的晶体构造的说明图。
具体实施方式
如上所述,蓝宝石具有耐磨损性以及耐腐蚀性,但具有各向异性,例如存在因面取向而吸附力不同的问题。因此,谋求具有优异的吸附力的静电卡盘。
本公开所涉及的静电卡盘由蓝宝石形成具有用于载置被吸附物的吸附面的板状体,吸附面与蓝宝石的c面所成的角为45°以上。因此,本公开所涉及的静电卡盘具有优异的吸附力。
如上所述,本公开所涉及的静电卡盘包含:板状体,具有用于载置被吸附物的吸附面;基体;以及电极膜,位于板状体与基体之间。基于图1以及图2对本公开所涉及的静电卡盘进行说明。
如图1所示,本公开的一个实施方式所涉及的静电卡盘1包含:板状体11,具有用于载置被吸附物2的吸附面11a;基体13;电极膜12,位于板状体11与基体13之间;以及基座14。
板状体11由蓝宝石形成,只要是板状,形状以及大小没有限定。板状体11的形状以及大小例如可根据被吸附物2的形状以及大小而适当设定。板状体11在俯视的情况下,例如也可以具有圆形状、椭圆形状或者多边形状(三角形状、四边形状、五边形状、六边形状等)。板状体11例如也可以具有0.1mm以上且0.4mm以下的厚度,板状体11的吸附面11a也可以具有例如100mm以上且40mm以下的直径(宽度)。
形成板状体11的蓝宝石是氧化铝(Al2O3)的单晶。蓝宝石是透明的绝缘体,具有优异的耐损伤性、耐热性、导热性等。
一个实施方式所涉及的静电卡盘1的板状体11的吸附面11a与蓝宝石的c面所成的角为45°以上。在此,对蓝宝石的晶面进行说明。图2表示蓝宝石的晶体构造。如图2的(A)~(D)所示,蓝宝石具有六方晶构造,作为代表性的晶面,存在c面、m面、a面以及r面。将与这些面垂直的轴分别称为c轴、m轴、a轴以及r轴。
“吸附面11a与蓝宝石的c面所成的角为45°以上”表示例如在对蓝宝石锭进行加工而得到板状体11的情况下,板状体11的吸附面11a相对于图2的(A)所示的c面倾斜45°以上。吸附面11a与蓝宝石的c面所成的角最大为90°,在90°的情况下,吸附面11a形成为与c面正交(与c轴平行地)。从进一步提高吸附力的方面考虑,吸附面11a与蓝宝石的c面所成的角也可以为60°以上,进一步优选为75°以上。
特别是,吸附面11a优选为图2的(D)所示的蓝宝石的r面。蓝宝石的r面相对于蓝宝石的c面倾斜约57.6°。由于蓝宝石的r面具有良好的耐等离子体性,因此例如不易因等离子体蚀刻而受到损伤。进而,蓝宝石的r面为解理面,加工性、生产率优异,也容易产生镜面。
若吸附面11a与蓝宝石的c面所成的角为45°以上,则能够发挥优异的吸附力的是基于下述的关系式(I)。
吸附力F=(S/2)×ε0×εr×(V/d)2·····(I)
S:静电电极面积
ε0:真空的介电常数
εr:绝缘体的相对介电常数
V:施加电压
d:绝缘层的厚度
即,若εr(绝缘体的相对介电常数)大,则吸附力F变大,因此增大吸附面11a的介电常数即可。在蓝宝石中,c面(与c轴正交的面)的相对介电常数最小,与a面、m面等c轴平行的面的相对介电常数最大。换句话说,与c面所成的角(距c面的倾斜)较大的面具有较大的介电常数。因此,在一个实施方式所涉及的静电卡盘1中,确定为“吸附面11a与蓝宝石的c面所成的角为45°以上”。
基体13是固定板状体11的构件,由蓝宝石形成。关于蓝宝石,如上所述,省略详细的说明。一个实施方式所涉及的静电卡盘1的板状体11以及基体13由透明的蓝宝石形成,具有优异的透光性。基体13无助于静电吸附,因此也可以使用相对介电常数比较大的晶体取向的蓝宝石。例如c面没有折射率的各向异性(双折射),也没有面内的热膨胀各向异性,因此适合作为基体13,a面、m面等与c面垂直的面也不会产生双折射。进而,a面的机械强度(弯曲强度)高。
基体13的形状以及大小没有限定,例如可根据板状体11的形状以及大小而适当设定。在俯视观察的情况下,基体13例如可以具有圆形状、椭圆形状或者多边形状(三角形状、四边形状、五边形状、六边形状等)。基体13例如具有1mm以上且50mm以下的厚度,例如,也可以具有比板状体11大的厚度。基体13的与板状体11对置的对置面具有与板状体11的与基体13对置的对置面大致相同的形状以及面积,例如也可以具有100mm以上且400mm以下的直径(宽度)。如关系式(I)所示,板状体11的厚度越小,静电卡盘1的吸附力越大。相反,基体13的厚度越大,静电卡盘1的机械强度越大。若基体13具有比板状体大的厚度,则能够提供吸附力和机械强度高的静电卡盘1。
蓝宝石的热膨胀率也存在各向异性,热膨胀率在与c轴平行的方向最大,越接近c轴的方向越大,越远离c轴的方向越小。在一个实施方式所涉及的静电卡盘1中,优选被配置成板状体11与基体13对置,使得形成板状体11的蓝宝石的c轴与形成基体13的蓝宝石的c轴不平行。通过这样地具备板状体11和基体13,能够进一步减少(抵消)由板状体11的热膨胀率各向异性引起的变形。
电极膜12位于板状体11与基体13之间,与外部的电源3电连接。电极膜12的形状以及厚度没有限定,可根据板状体11以及基体13的形状以及大小而适当设定。电极膜12可以具有透光性,例如可以举出ITO(氧化锡铟)膜、氧化锡膜、氧化锌膜等。
基座14是用于支承层叠的板状体11、电极膜12以及基体13的构件,被设置为基体13与基座14接触。基座14只要是能够支承层叠的板状体11、电极膜12以及基体13的形状以及大小,则没有限定。基座14例如由金属、树脂、陶瓷等形成。
如图1所示,在基体13以及基座14形成电极取出部13a、14a,电极膜12与外部的电源3经由该电极取出部13a、14a电连接。电极取出部13a、14a通过在基体13以及基座14设置贯通孔而形成。在该贯通孔(电极取出部13a、14a)内,通过用于连接电极膜12和电源3的导体,电极膜12与电源3电连接。
板状体11与基体13的接合方法没有限定。作为接合方法,例如可举出使用UV固化粘接剂进行粘接的方法、通过扩散接合等直接接合的方法等。
一个实施方式所涉及的静电卡盘1例如设置于检查装置。作为检查装置,例如可举出外观检查装置等。外观检查装置具备光源、载置部以及拍摄部,对载置于载置部的检查对象物的外观形状进行检查。若使用相对于来自光源的光透明的载置部,则能够将光源、检查对象物以及拍摄部配置在相同直线上,因此能够以简单的结构提高检查精度。在这样的检查装置中,静电卡盘1吸附并保持检查对象物(被吸附物2),进行检查对象物的检查。作为检查对象物(被吸附物2),例如可举出由半导体、金属、陶瓷、树脂、单晶等构成的基板、元件。
使一个实施方式所涉及的静电卡盘1吸附被吸附物2的方法例如如下所述。当通过电源3对电极膜12与被吸附物2之间施加电压时,由蓝宝石形成的板状体11进行介电极化。其结果,能够利用库仑力使板状体11的吸附面11a吸附被吸附物2。也可以将正电极和负电极都作为电极膜12而形成在板状体11与基体13之间。
在一个实施方式所涉及的静电卡盘1中,板状体11的吸附面11a与蓝宝石的c面所成的角为45°以上。因此,一个实施方式所涉及的静电卡盘1能够以较强的吸附力吸附被吸附物2。
本公开所涉及的静电卡盘并不限定于上述的一个实施方式所涉及的静电卡盘1。在一个实施方式所涉及的静电卡盘1中,如上述那样设置有基座14,对层叠的板状体11、电极膜12以及基体13进行支承。但是,在本公开所涉及的静电卡盘中,基座不是必须的构件,也可以不设置基座。
一个实施方式所涉及的静电卡盘1是具备一个电极膜12的单极型的静电卡盘。但是,本公开所涉及的静电卡盘也可以是具备多个电极膜的双极型的静电卡盘。
-附图标记说明-
1 静电卡盘
11 板状体
11a 吸附面
12 电极膜
13 基体
13a 电极取出部
14 基座
14a电极取出部
2被吸附物
3电源。
Claims (4)
1.一种静电卡盘,包含:
板状体,具有用于载置被吸附物的吸附面;
基体;以及
电极膜,位于所述板状体与所述基体之间,
所述板状体以及所述基体由蓝宝石形成,
所述吸附面与所述蓝宝石的c面所成的角为45°以上。
2.根据权利要求1所述的静电卡盘,其中,
所述基体具有比所述板状体大的厚度。
3.根据权利要求1或2所述的静电卡盘,其中,
所述电极膜具有透光性。
4.根据权利要求1~3中任一项所述的静电卡盘,其中,
所述静电卡盘被配置成所述板状体与所述基体对置,使得形成所述板状体的所述蓝宝石的c轴与形成所述基体的所述蓝宝石的c轴不平行。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2021012365 | 2021-01-28 | ||
JP2021-012365 | 2021-01-28 | ||
PCT/JP2022/002708 WO2022163656A1 (ja) | 2021-01-28 | 2022-01-25 | 静電チャック |
Publications (1)
Publication Number | Publication Date |
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CN116762162A true CN116762162A (zh) | 2023-09-15 |
Family
ID=82653559
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Application Number | Title | Priority Date | Filing Date |
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CN202280011188.2A Pending CN116762162A (zh) | 2021-01-28 | 2022-01-25 | 静电卡盘 |
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US (1) | US20240105489A1 (zh) |
EP (1) | EP4287491A1 (zh) |
JP (1) | JPWO2022163656A1 (zh) |
KR (1) | KR20230121908A (zh) |
CN (1) | CN116762162A (zh) |
WO (1) | WO2022163656A1 (zh) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06291175A (ja) | 1993-04-01 | 1994-10-18 | Kyocera Corp | 静電チャック |
US5754391A (en) * | 1996-05-17 | 1998-05-19 | Saphikon Inc. | Electrostatic chuck |
JP3455026B2 (ja) * | 1996-09-30 | 2003-10-06 | 京セラ株式会社 | 静電チャック |
JP2004207644A (ja) * | 2002-12-26 | 2004-07-22 | Toto Ltd | 静電チャック及びこれを用いた貼合わせ基板製造装置 |
-
2022
- 2022-01-25 WO PCT/JP2022/002708 patent/WO2022163656A1/ja active Application Filing
- 2022-01-25 EP EP22745876.7A patent/EP4287491A1/en active Pending
- 2022-01-25 KR KR1020237025056A patent/KR20230121908A/ko unknown
- 2022-01-25 CN CN202280011188.2A patent/CN116762162A/zh active Pending
- 2022-01-25 JP JP2022578413A patent/JPWO2022163656A1/ja active Pending
- 2022-01-25 US US18/274,834 patent/US20240105489A1/en active Pending
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US20240105489A1 (en) | 2024-03-28 |
EP4287491A1 (en) | 2023-12-06 |
JPWO2022163656A1 (zh) | 2022-08-04 |
KR20230121908A (ko) | 2023-08-21 |
WO2022163656A1 (ja) | 2022-08-04 |
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