CN116705930A - Semiconductor light-emitting diode - Google Patents
Semiconductor light-emitting diode Download PDFInfo
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- CN116705930A CN116705930A CN202310316701.5A CN202310316701A CN116705930A CN 116705930 A CN116705930 A CN 116705930A CN 202310316701 A CN202310316701 A CN 202310316701A CN 116705930 A CN116705930 A CN 116705930A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
- 230000032683 aging Effects 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000000903 blocking effect Effects 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 34
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- 230000000737 periodic effect Effects 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 9
- 229910052596 spinel Inorganic materials 0.000 claims description 6
- 229910010936 LiGaO2 Inorganic materials 0.000 claims description 3
- 229910026161 MgAl2O4 Inorganic materials 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000011029 spinel Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims 4
- -1 magnesium aluminate Chemical class 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 description 13
- 238000005215 recombination Methods 0.000 description 13
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- 239000000463 material Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000001819 mass spectrum Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a semiconductor light-emitting diode, which comprises a substrate, an n-type semiconductor, a superlattice, a shallow quantum well, a quantum well, an electron blocking layer and a p-type semiconductor which are sequentially connected from bottom to top, wherein Mg and Si are doped in each of the n-type semiconductor, the superlattice, the shallow quantum well, the electron blocking layer and the p-type semiconductor, and a junction point between Mg doping and Si doping is positioned at an interface between 1-3 cycles of the quantum well and the last 1-3 cycles of the shallow quantum well so as to enable the shallow quantum well and the quantum well to form an aging leakage control structure. The semiconductor light-emitting diode provided by the invention has the advantages that the crossing of Mg and Si doping elements is effectively reduced, the quantum confinement effect of the quantum well is improved, the shallow quantum well and the quantum well can form an aging leakage control structure, electrons and holes injected into the quantum well are localized to the greatest extent, the electrons and the holes are prevented from being trapped by defects, and the generation probability of leakage of the light-emitting diode in the aging process is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectric devices, in particular to a semiconductor light-emitting diode.
Background
The semiconductor element, particularly the semiconductor light-emitting element, has a wide wavelength range with adjustable range, high light-emitting efficiency, energy conservation, environmental protection, long service life exceeding 10 ten thousand hours, small size, multiple application scenes, strong designability and other factors, has gradually replaced incandescent lamps and fluorescent lamps, grows a light source for common household illumination, and is widely applied to new scenes, such as application fields of indoor high-resolution display screens, outdoor display screens, mini-LEDs, micro-LEDs, mobile phone television backlights, backlight illumination, street lamps, automobile headlamps, daytime running lights, in-car atmosphere lamps, flashlights and the like.
Nitride semiconductors are considered as promising light-emitting materials due to their own characteristics, and have been widely used in the production of semiconductor light-emitting elements. But the nitride semiconductor grows by using a sapphire substrate, so that the lattice mismatch and the thermal mismatch are large, higher defect density and polarization effect are caused, and the luminous efficiency of the semiconductor luminous element is reduced; meanwhile, the hole ionization efficiency of the nitride semiconductor is far lower than the electron ionization efficiency, so that the hole concentration is over 1 order of magnitude lower than the electron concentration, excessive electrons can overflow from the multiple quantum wells to the second conductive semiconductor to generate non-radiative recombination, the hole ionization efficiency is low, holes of the second conductive semiconductor are difficult to effectively inject into the multiple quantum wells, the hole injection efficiency is low, and the light emitting efficiency of the multiple quantum wells is low; the nitride semiconductor structure has non-central symmetry, can generate stronger spontaneous polarization along the direction of the c-axis, and superimposes piezoelectric polarization effects of lattice mismatch to form an intrinsic polarization field; the intrinsic polarization field makes the multi-quantum well layer generate stronger quantum confinement Stark effect along the (001) direction, and causes energy band inclination and electron hole wave function space separation, so that the radiation recombination efficiency of electron holes of the semiconductor light-emitting diode prepared by the semiconductor can be gradually reduced in the aging process, and the electric leakage ratio is high.
Disclosure of Invention
The invention aims to provide a semiconductor light-emitting diode, which solves the technical problems, and by constructing an aging leakage control structure in the diode, electrons and holes injected into a quantum well are localized to the maximum extent, so that the electrons and the holes are prevented from being trapped by defects, and the generation probability of leakage of the light-emitting diode in the aging process is reduced.
In order to solve the technical problems, the invention provides a semiconductor light-emitting diode, which comprises a substrate, an n-type semiconductor, a superlattice, a shallow quantum well, a quantum well, an electron blocking layer and a p-type semiconductor which are sequentially connected from bottom to top, wherein Mg and Si are doped in each of the n-type semiconductor, the superlattice, the shallow quantum well, the electron blocking layer and the p-type semiconductor, wherein an intersection point of Mg doping and Si doping is positioned at an interface between a 1 st period to 3 th period of the quantum well and a last 1 period to 3 last period of the shallow quantum well, so that the shallow quantum well and the quantum well form an aging leakage control structure, and electrons and holes injected into the quantum well are maximally quantum localized.
According to the scheme, the crossing point of Mg doping and Si doping is arranged at the interface between the 1 st period and 3 rd period of the quantum well and the last 1 st period and 3 rd period of the shallow quantum well, so that the crossing of Mg and Si doping elements can be effectively reduced, the quantum confinement effect of the quantum well is improved, the shallow quantum well and the quantum well can form an aging leakage control structure, electrons and holes injected into the quantum well are localized to the greatest extent, the electrons and the holes are prevented from being trapped by defects, the generation probability of leakage of the light-emitting diode in the aging process is reduced, the performance of the light-emitting diode is guaranteed, and the service life of the light-emitting diode is prolonged.
Further, the quantum well is a periodic structure composed of a first well layer and a first barrier layer, and the period number of the quantum well is not less than 8 and not more than 20.
In the scheme, the cycle number of the quantum well is set to be not less than 8 and not more than 20, so that on one hand, the quantum recombination efficiency can be improved, the recombination probability of electrons and holes can be effectively improved, on the other hand, the quality of the quantum well can be improved, the generation of defects can be reduced, the recombination efficiency of electron holes can be further improved, and the luminous efficiency of the quantum well can be ensured.
Further, the first well layer is thicker than the first barrier layer, and the ratio of the first barrier layer to the first well layer is not less than 2 and not more than 4; preferably, the first well layer has a thickness of not less than 30 a/m and not more than 40 a/m, and the first barrier layer has a thickness of not less than 80 a/m and not more than 120 a/m.
Further, the shallow quantum well is a periodic structure composed of a second well layer and a second barrier layer, and the period number of the shallow quantum well is not less than 3 and not more than 10.
In the scheme, the shallow quantum well provides electron injection and a transverse expansion channel, and the cycle number of the shallow quantum well is set to be not less than 3 and not more than 10, so that on one hand, the shallow quantum well can be ensured to release proper lattice mismatch stress, meanwhile, the quality of crystals can be ensured, and the surface of crystals is optimized.
Further, the thickness of the second well layer is smaller than that of the second barrier layer, and the ratio of the thickness of the second barrier layer to that of the second well layer is not smaller than 2 and not larger than 4; preferably, the second well layer has a thickness of not less than 10 a/m and not more than 40 a/m, and the second barrier layer has a thickness of not less than 60 a/m and not more than 120 a/m.
Further, the forming of the aged leakage control structure further comprises that there is no intersection between Mg doping and Si doping in the superlattice.
According to the scheme, the cross point of Mg doping and Si doping is not formed in the superlattice, so that the cross of Mg and Si doping elements is reduced, the quantum confinement effect of the quantum well in the aging leakage control structure is further improved, electrons and holes are restrained from being trapped by defects, and the leakage probability is reduced.
Further, the superlattice is a periodic structure composed of a third well layer and a third barrier layer, and the period number of the periodic structure is not less than 1 and not more than 6. The third well layer has a thickness smaller than the third barrier layer, a ratio of the third barrier layer to the third well layer is not smaller than 3 and not larger than 15, preferably, the third well layer has a thickness of not smaller than 10 and not larger than 40 a, and the third barrier layer has a thickness of not smaller than 80 a and not larger than 300 a.
Further, the forbidden bandwidth of the superlattice is larger than or equal to the forbidden bandwidth of the shallow quantum well, and the forbidden bandwidth of the shallow quantum well is larger than the forbidden bandwidth of the quantum well.
In the scheme, the performance of the aging leakage control structure can be further ensured, and the leakage probability is improved and reduced based on the setting and condition limitation of the specific structures of the superlattice, the shallow quantum well and the quantum well of the semiconductor light emitting diode.
Further, the n-type semiconductor, the shallow quantum well, the electron blocking layer and the p-type semiconductor are formed by adopting any one or a plurality of materials of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga O3, BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP and InGaP.
Further, the substrate is any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate, a sapphire/AlN composite substrate, a sapphire/SiNx, magnesia-alumina spinel MgAl2O4, mgO, znO, zrB2, liAlO2 or LiGaO2 composite substrate.
In the scheme, the crossing point of Mg doping and Si doping is arranged at the interface between the 1 st period and 3 rd period of the quantum well and the last 1 st to 3 rd period of the shallow quantum well, so that the shallow quantum well and the quantum well form an aging leakage control structure, electrons and holes injected into the quantum well are localized by the maximum quantum, the purpose of reducing the generation probability of leakage of the light-emitting diode in the aging process is achieved, and the scheme is not limited by materials selected from n-type semiconductors, shallow quantum wells, electron blocking layers, p-type semiconductors and substrates, therefore, the scheme has wide material selection range and is convenient for practical production and use.
Drawings
Fig. 1 is a schematic diagram of a semiconductor light emitting diode according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an aging leakage control structure SIMS secondary ion mass spectrum of a semiconductor light emitting diode according to an embodiment of the present invention;
FIG. 3 is a diagram of a quantum well TEM transmission electron microscope of an aging leakage control structure of a semiconductor light emitting diode according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a TEM transmission electron microscope of a semiconductor light emitting diode according to an embodiment of the present invention;
fig. 5 is a superlattice TEM test chart of an aging leakage control structure for a semiconductor light emitting diode according to an embodiment of the present invention;
fig. 6 is a SIMS secondary ion mass spectrum of C, H, O impurity of an aged leakage control structure of a semiconductor light-emitting diode according to an embodiment of the present invention;
wherein: 1. a substrate; 2. an n-type semiconductor; 3. a superlattice; 4. shallow quantum wells; 5. a quantum well; 6. an electron blocking layer; 7. a p-type semiconductor.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the present embodiment provides a semiconductor light emitting diode, which includes a substrate 1, an n-type semiconductor 2, a superlattice 3, a shallow quantum well 4, a quantum well 5, an electron blocking layer 6, and a p-type semiconductor 7 sequentially connected from bottom to top, wherein Mg and Si are doped in each of the n-type semiconductor 2, the superlattice 3, the shallow quantum well 4, the quantum well 5, the electron blocking layer 6, and the p-type semiconductor 7, and an intersection between Mg doping and Si doping is located at an interface between a 1 st to 3 th period of the quantum well 5 and a last 1 to 3 last period of the shallow quantum well 4, as shown in fig. 2, so that the shallow quantum well 4 and the quantum well 5 form an aging leakage control structure, and electrons and holes injected into the quantum well 5 are localized by quantum maximally.
In the embodiment, the crossing point of Mg doping and Si doping is arranged at the interface between the 1 st to 3 rd periods of the quantum well 5 and the last 1 st to 3 rd periods of the shallow quantum well 4, so that the crossing of Mg and Si doping elements can be effectively reduced, the quantum confinement effect of the quantum well 5 is improved, the shallow quantum well 4 and the quantum well 5 can form an aging leakage control structure, electrons and holes injected into the quantum well 5 are localized to the greatest extent, the electrons and the holes are prevented from being trapped by defects, the generation probability of leakage of the light-emitting diode in the aging process is reduced, the performance of the light-emitting diode is ensured, and the service life of the light-emitting diode is prolonged.
It should be noted that fig. 2 provides a SIMS secondary ion mass spectrum of the aging leakage control structure of the semiconductor light emitting diode, which is a secondary ion profile tested from the p-type semiconductor 7 to the n-type semiconductor 2, that is, the concentration and intensity of each element of the semiconductor light emitting diode in the corresponding layer. Wherein Si and Mg are doping elements, and Al, ga and In are basic elements. In the semiconductor light-emitting diode provided by the embodiment, the Mg doping concentration is that the quantum well 5 is more than or equal to the shallow quantum well 4, and the shallow quantum well 4 is more than the superlattice 3; the Si doping concentration is that the superlattice 3 is larger than the quantum well 5, and the quantum well 5 is larger than or equal to the shallow quantum well 4. Quantum well 5 has a junction concentration of Mg doping concentration and Si doping concentration greater than 2E17cm as measured by SIMS secondary ion mass spectrometry -3 And less than 1E18cm -3 The Mg doping concentration of the shallow quantum well 4, which is tested by SIMS secondary ion mass spectrometry, is from 5E17 to 1E18cm from the quantum well 5 to the shallow quantum well 4 -3 Lowering to 1E 14-5E 17cm -3 The Si doping concentration in the shallow quantum well 4 is kept constant at about 1E 17-1E 18cm -3 The Mg doping concentration of the superlattice 3 is 1E 14-5E 16cm by SIMS secondary ion mass spectrometry test -3 The Mg doping concentration in the shallow quantum well 4 is about 1E 14-5E 17cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The Si doping concentration of the superlattice 3 is 1E 18-1E 19cm tested by SIMS secondary ion mass spectrometry -3 。
Further, as can be seen from FIG. 2, the Si doping concentration is kept constant from 1E17 to 1E18cm from the shallow quantum well 4 toward the quantum well 5 -3 The reciprocal of the Mg doping concentration from the electron blocking layer 6 to the quantum well 5 is 1 to 2 cycles, and the period is 1E19 to 5E20cm -3 Rapidly linearly drop to 5E 17-2E 18cm -3 Then slowly lowering to 1E 17-5E 17cm -3 。
Further, the quantum well 5 is a periodic structure composed of a first well layer and a first barrier layer, and the number of periods thereof is not less than 8 and not more than 20.
It should be noted that, when the number of pairs of quantum wells 5 is less than 8, the quantum recombination efficiency is low, and the recombination probability of electrons and holes cannot be effectively improved; when the number of pairs of quantum wells 5 is larger than 20 pairs, too many stacks of quantum wells 5 may result in deterioration of quality of the quantum wells 5, increase of defects, non-radiative recombination enhancement, and further reduction of recombination efficiency of electron holes. In this embodiment, the number of cycles of the quantum well 5 is set to be not less than 8 and not more than 20, which can improve the quantum recombination efficiency, effectively improve the recombination probability of electrons and holes, improve the quality of the quantum well 5, reduce the occurrence of defects, further improve the recombination efficiency of electrons and holes, and ensure the light-emitting efficiency of the quantum well 5.
Further, the first well layer is thicker than the first barrier layer, and the ratio of the first barrier layer to the first well layer is not less than 2 and not more than 4; preferably, the first well layer has a thickness of not less than 30 a/m and not more than 40 a/m, and the first barrier layer has a thickness of not less than 80 a/m and not more than 120 a/m.
Further, the shallow quantum well 4 is a periodic structure composed of a second well layer and a second barrier layer, and the number of periods thereof is not less than 3 and not more than 10.
It should be noted that, the shallow quantum well 4 provides electron injection and lateral expansion channels, releases lattice mismatch stress, and has too small cycle number to achieve the above effects; too many cycles may result in deterioration of crystal quality, and at the same time, increase of the size of V-type defects, and deterioration of surface. In this embodiment, the shallow quantum well 4 provides electron injection and lateral expansion channels, and the cycle number of the shallow quantum well 4 is set to be not less than 3 and not more than 10, so that on one hand, it can be ensured that the shallow quantum well 4 can release proper lattice mismatch stress, and meanwhile, the quality of crystals can be ensured, and the surface of crystals is optimized.
Further, the thickness of the second well layer is smaller than that of the second barrier layer, and the ratio of the thickness of the second barrier layer to that of the second well layer is not smaller than 2 and not larger than 4; preferably, the second well layer has a thickness of not less than 10 a/m and not more than 40 a/m, and the second barrier layer has a thickness of not less than 60 a/m and not more than 120 a/m.
Further, the formation of the aging leakage control structure further includes that there is no intersection between Mg doping and Si doping in the superlattice 3.
In the embodiment, the superlattice 3 has no crossing point of Mg doping and Si doping, so that the crossing of Mg and Si doping elements is reduced, the quantum confinement effect of the quantum well 5 in the aging leakage control structure is further improved, electrons and holes are inhibited from being trapped by defects, and the probability of leakage is reduced.
Further, the superlattice 3 is a periodic structure composed of a third well layer and a third barrier layer, and has a period number of not less than 1 and not more than 6. The third well layer has a thickness smaller than the third barrier layer, a ratio of the third barrier layer to the third well layer is not smaller than 3 and not larger than 15, preferably, the third well layer has a thickness of not smaller than 10 and not larger than 40 a, and the third barrier layer has a thickness of not smaller than 80 a and not larger than 300 a.
Further, the forbidden bandwidth of the superlattice 3 is greater than or equal to the forbidden bandwidth of the shallow quantum well 4, and the forbidden bandwidth of the shallow quantum well 4 is greater than the forbidden bandwidth of the quantum well 5.
The above embodiment is based on setting and condition limitation on specific structures of the superlattice 3, the shallow quantum well 4 and the quantum well 5 of the semiconductor light emitting diode, and can further ensure the performance of the aging leakage control structure, and improve the probability of reducing leakage.
In order to further describe the technical gist of the present invention, and to highlight the technical advantages, the present embodiment provides a schematic TEM transmission electron microscope test diagram for forming the quantum well 5, the shallow quantum well 4 and the superlattice 3 of the aged leakage control structure, respectively, and referring to fig. 3 to 5, in combination with the above illustration, it is shown that the aged leakage control structure of the semiconductor light emitting diode provided in the present embodiment can be substantially constructed, is a practical mass production structure, and can ensure mass production.
Further, the n-type semiconductor 2, the shallow quantum well 4, the quantum well 5, the electron blocking layer 6 and the p-type semiconductor 7 are formed by using any one or a combination of a plurality of materials of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga O3, BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP and InGaP.
Further, the substrate 1 is any one of a sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, a sapphire/SiO 2 composite substrate 1, a sapphire/AlN composite substrate 1, a sapphire/SiNx, a magnesia-alumina spinel MgAl2O4, mgO, znO, zrB2, liAlO2 or a LiGaO2 composite substrate 1.
In this embodiment, the intersection point of Mg doping and Si doping is set at the interface between the 1 st to 3 rd cycles of the quantum well 5 and the last 1 st to 3 rd cycles of the shallow quantum well 4, so that the shallow quantum well 4 and the quantum well 5 form an aging leakage control structure, thereby enabling electrons and holes injected into the quantum well 5 to be localized by the maximum quantum, achieving the purpose of reducing the generation probability of leakage in the aging process of the light emitting diode, and being not limited by the materials selected from the n-type semiconductor 2, the shallow quantum well 4, the quantum well 5, the electron blocking layer 6, the p-type semiconductor 7 and the substrate 1.
Further, in order to describe the doping concentration of other elements in the present invention, the present embodiment provides a SIMS secondary ion mass spectrum of C, H, O impurity of the aging leakage control structure of a semiconductor light emitting diode, and particularly, refer to fig. 6. Wherein the C impurity concentration of the shallow quantum well 4 and the quantum well 5 layers is between 5E15 and 5E16cm -3 The concentration of C impurity of the superlattice 3 is 5E 16-1E 18cm -3 The C impurity concentration of the superlattice 3 is larger than that of the quantum well 5 and is larger than or equal to that of the shallow quantum well 4, but the H impurity concentration and the O impurity concentration of the quantum well 5, the shallow quantum well 4 and the superlattice 3 are basically equivalent and are respectively 5E 16-5E 17cm < -3 > and 1E 16-1E 17cm < -3 >. The H impurity concentration in the quantum well 5 linearly decreases from the electron blocking layer 6 to the quantum well 5The concentration is from 1E17 to 1E18cm -3 Down to 1E 16-17 Ecm -3 While the H impurity concentration in the shallow quantum well 4 is kept at 1E 16-17 Ecm -3 Is basically unchanged. According to the semiconductor light-emitting diode provided by the embodiment, the Mg doping and Si doping crossing points are positioned at the interfaces of the 1 st to 3 rd periods of the quantum well 5 and the last 1 st to 3 rd periods of the shallow quantum well 4, the Mg doping and Si doping in the superlattice 3 are not crossing points, and the quantum well 5, the shallow quantum well 4 and the superlattice 3 are formed into an aging leakage control structure under the condition that the thicknesses of the well layers of the quantum well 5, the shallow quantum well 4 and the superlattice 3 are smaller than the thicknesses of barrier layers, so that electrons and holes injected into the quantum well 5 are localized to the greatest extent, the electrons and the holes are prevented from being captured by defects, and the generation probability of leakage of the light-emitting diode in the aging process is reduced. In the practical application process, the aging leakage ratio of 1 ten thousand hours can be reduced from more than 500PPM to less than 50PPM, the radiation recombination efficiency of electron holes in the quantum well 5 is improved, and the luminous efficiency of the semiconductor light-emitting diode is improved.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (10)
1. The semiconductor light-emitting diode comprises a substrate, an n-type semiconductor, a superlattice, a shallow quantum well, a quantum well, an electron blocking layer and a p-type semiconductor which are sequentially connected from bottom to top, wherein Mg and Si are doped in the n-type semiconductor, the superlattice, the shallow quantum well, the electron blocking layer and the p-type semiconductor, and the semiconductor light-emitting diode is characterized in that an Mg doping and Si doping cross point is positioned at an interface between the 1 st cycle to 3 th cycle of the quantum well and the last 1 st cycle to 3 rd cycle of the shallow quantum well, so that the shallow quantum well and the quantum well form an aging leakage control structure, and electrons and holes injected into the quantum well are localized to the maximum extent.
2. The semiconductor light-emitting diode according to claim 1, wherein the quantum well is a periodic structure composed of a first well layer and a first barrier layer, and the number of periods is not less than 8 and not more than 20.
3. The semiconductor light emitting diode of claim 2, wherein the first well layer has a thickness less than the first barrier layer thickness, and wherein a ratio of the first barrier layer to the first well layer thickness is not less than 2 and not more than 4.
4. The semiconductor light emitting diode according to claim 1, wherein the shallow quantum well is a periodic structure composed of a second well layer and a second barrier layer, and the number of periods is not less than 3 and not more than 10.
5. The semiconductor light emitting diode of claim 4, wherein the second well layer has a thickness less than the second barrier layer, and wherein a ratio of the second barrier layer to the second well layer is not less than 2 and not more than 4.
6. A semiconductor light emitting diode according to any one of claims 1 to 5 wherein the formation of the burn-in leakage control structure further comprises the absence of crossing points of Mg doping and Si doping in the superlattice.
7. The semiconductor light emitting diode according to claim 6, wherein the superlattice is a periodic structure composed of a third well layer and a third barrier layer, and wherein a period number of the periodic structure is not less than 1 and not more than 6.
8. The semiconductor light emitting diode of claim 7, wherein the third well layer has a thickness less than the third barrier layer, and wherein a ratio of the third barrier layer to the third well layer has a thickness not less than 3 and not more than 15.
9. The semiconductor light emitting diode of claim 6, wherein the n-type semiconductor, shallow quantum well, electron blocking layer, and p-type semiconductor are formed using any one or more of GaN, alGaN, inGaN, alInGaN, alN, inN, alInN, siC, ga O3, BN, gaAs, gaP, inP, alGaAs, alInGaAs, alGaInP, inGaAs, alInAs, alInP, alGaP, and InGaP.
10. The semiconductor light emitting diode of claim 9, wherein the substrate is any one of sapphire, silicon, ge, siC, alN, gaN, gaAs, inP, sapphire/SiO 2 composite substrate, sapphire/AlN composite substrate, sapphire/SiNx, magnesium aluminate spinel MgAl2O4, mgO, znO, zrB2, liAlO2 or LiGaO2 composite substrate.
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