CN116648794A - 太阳能电池的电极结构和制造方法 - Google Patents

太阳能电池的电极结构和制造方法 Download PDF

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Publication number
CN116648794A
CN116648794A CN202180085875.4A CN202180085875A CN116648794A CN 116648794 A CN116648794 A CN 116648794A CN 202180085875 A CN202180085875 A CN 202180085875A CN 116648794 A CN116648794 A CN 116648794A
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CN
China
Prior art keywords
layer
solar cell
conductor
electrode structure
group
Prior art date
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Pending
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CN202180085875.4A
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English (en)
Chinese (zh)
Inventor
宫川善秀
深泽一仁
滨野干雄
堀口恭平
山口幸士
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Idemitsu Kosan Co Ltd
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Idemitsu Kosan Co Ltd
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Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Publication of CN116648794A publication Critical patent/CN116648794A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/955—Circuit arrangements for devices having potential barriers for photovoltaic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/939—Output lead wires or elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/906—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the materials of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN202180085875.4A 2020-12-21 2021-12-21 太阳能电池的电极结构和制造方法 Pending CN116648794A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020211733 2020-12-21
JP2020-211733 2020-12-21
PCT/JP2021/047252 WO2022138623A1 (ja) 2020-12-21 2021-12-21 太陽電池の電極構造および製造方法

Publications (1)

Publication Number Publication Date
CN116648794A true CN116648794A (zh) 2023-08-25

Family

ID=82159367

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180085875.4A Pending CN116648794A (zh) 2020-12-21 2021-12-21 太阳能电池的电极结构和制造方法

Country Status (5)

Country Link
US (1) US20240047586A1 (https=)
EP (1) EP4266376A4 (https=)
JP (1) JP7702971B2 (https=)
CN (1) CN116648794A (https=)
WO (1) WO2022138623A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4318603A4 (en) * 2021-03-30 2025-04-09 Idemitsu Kosan Co.,Ltd. Photoelectric conversion element and method for producing a photoelectric conversion element

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6255963A (ja) 1985-09-04 1987-03-11 Mitsubishi Electric Corp ＧａＡｓ半導体装置
JPH11163376A (ja) * 1997-11-27 1999-06-18 Matsushita Electric Ind Co Ltd 薄膜太陽電池
JP2000004034A (ja) 1998-06-16 2000-01-07 Yazaki Corp 太陽電池モジュールにおけるバスバーの接続方法
JP2004363293A (ja) * 2003-06-04 2004-12-24 Sharp Corp 太陽電池モジュール及びその製造方法
JP2006013028A (ja) * 2004-06-24 2006-01-12 National Institute Of Advanced Industrial & Technology 化合物太陽電池及びその製造方法
JP4993916B2 (ja) * 2006-01-31 2012-08-08 昭和シェル石油株式会社 Ｉｎハンダ被覆銅箔リボン導線及びその接続方法
JP4974301B2 (ja) 2008-04-04 2012-07-11 昭和シェル石油株式会社 太陽電池モジュールの製造方法
US20100243043A1 (en) * 2009-03-25 2010-09-30 Chuan-Lung Chuang Light Absorbing Layer Of CIGS Solar Cell And Method For Fabricating The Same
JP2012253158A (ja) * 2011-06-01 2012-12-20 Kobe Steel Ltd 化合物半導体薄膜太陽電池用裏面電極および太陽電池、並びに上記裏面電極を製造するためのスパッタリングターゲット
US9527189B2 (en) * 2011-08-10 2016-12-27 Orthodyne Electronics Corporation Systems and methods for processing solar substrates
JP2015026710A (ja) * 2013-07-26 2015-02-05 京セラ株式会社 光電変換装置
JP6474578B2 (ja) * 2014-09-30 2019-02-27 株式会社カネカ 太陽電池モジュール及びその製造方法
KR20170036604A (ko) * 2015-09-24 2017-04-03 재단법인대구경북과학기술원 황화아연 버퍼층을 적용한 czts계 박막 태양전지 제조방법
JP7077017B2 (ja) * 2015-12-24 2022-05-30 ソーラーフロンティア株式会社 太陽電池モジュール
JP2020088111A (ja) * 2018-11-22 2020-06-04 パナソニック株式会社 太陽電池セルおよび太陽電池モジュール
CN111299802A (zh) * 2018-12-11 2020-06-19 华夏易能(海南)新能源科技有限公司 扁平电缆与钼层的连接方法、焊接结构件和cigs太阳能电池

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Publication number Publication date
JP7702971B2 (ja) 2025-07-04
US20240047586A1 (en) 2024-02-08
JPWO2022138623A1 (https=) 2022-06-30
EP4266376A1 (en) 2023-10-25
WO2022138623A1 (ja) 2022-06-30
EP4266376A4 (en) 2024-12-11

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