CN116636004A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN116636004A
CN116636004A CN202180086142.2A CN202180086142A CN116636004A CN 116636004 A CN116636004 A CN 116636004A CN 202180086142 A CN202180086142 A CN 202180086142A CN 116636004 A CN116636004 A CN 116636004A
Authority
CN
China
Prior art keywords
solder
region
main surface
electrode
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180086142.2A
Other languages
English (en)
Chinese (zh)
Inventor
西畑雅由
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN116636004A publication Critical patent/CN116636004A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers

Landscapes

  • Electrodes Of Semiconductors (AREA)
CN202180086142.2A 2020-12-22 2021-11-25 半导体装置 Pending CN116636004A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-212680 2020-12-22
JP2020212680A JP2022098977A (ja) 2020-12-22 2020-12-22 半導体装置
PCT/JP2021/043194 WO2022137966A1 (ja) 2020-12-22 2021-11-25 半導体装置

Publications (1)

Publication Number Publication Date
CN116636004A true CN116636004A (zh) 2023-08-22

Family

ID=82157659

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180086142.2A Pending CN116636004A (zh) 2020-12-22 2021-11-25 半导体装置

Country Status (4)

Country Link
US (1) US20230317599A1 (https=)
JP (1) JP2022098977A (https=)
CN (1) CN116636004A (https=)
WO (1) WO2022137966A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024006287A (ja) * 2022-07-01 2024-01-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5266720B2 (ja) * 2007-10-30 2013-08-21 株式会社デンソー 半導体装置
JP2010118548A (ja) * 2008-11-13 2010-05-27 Mitsubishi Electric Corp 半導体装置
JP2010165880A (ja) * 2009-01-16 2010-07-29 Toyota Industries Corp 半導体装置
JP5146490B2 (ja) * 2010-06-07 2013-02-20 三菱電機株式会社 半導体素子
JP5765324B2 (ja) * 2012-12-10 2015-08-19 トヨタ自動車株式会社 半導体装置
JP2015146368A (ja) * 2014-02-03 2015-08-13 株式会社東芝 半導体装置
JP6485398B2 (ja) * 2016-04-13 2019-03-20 株式会社デンソー 電子装置及びその製造方法
JP6638620B2 (ja) * 2016-11-01 2020-01-29 株式会社デンソー 半導体装置
CN110050341B (zh) * 2016-12-06 2024-05-28 株式会社东芝 半导体装置
US10896863B2 (en) * 2017-01-13 2021-01-19 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing the same
US11398434B2 (en) * 2017-09-20 2022-07-26 Mitsubishi Electric Corporation Semiconductor device, and method for manufacturing semiconductor device
JP7234858B2 (ja) * 2019-08-22 2023-03-08 三菱電機株式会社 半導体装置及びインバータ
JP7476502B2 (ja) * 2019-09-06 2024-05-01 富士電機株式会社 半導体装置
JP7232743B2 (ja) * 2019-10-24 2023-03-03 株式会社 日立パワーデバイス 半導体装置及びそれを用いた整流素子、オルタネータ

Also Published As

Publication number Publication date
JP2022098977A (ja) 2022-07-04
WO2022137966A1 (ja) 2022-06-30
US20230317599A1 (en) 2023-10-05

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