CN116631896A - 基片处理系统、基片处理方法和存储介质 - Google Patents
基片处理系统、基片处理方法和存储介质 Download PDFInfo
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Abstract
本发明提供能够并行地实施包含批次处理及单片处理的复合处理、和单片处理的基片处理系统、基片处理方法和存储介质。本发明的一个方式的基片处理系统包括:送入送出部,其送入送出收纳多个基片的盒;批次处理部,其对包含多个基片的基片组一并进行处理;单片处理部,其对基片逐一地进行处理;第一接口部,其将盒所收纳的基片在单片处理部与批次处理部之间进行分配;和第二接口部,其在批次处理部与单片处理部之间交接基片,第一接口部包括:第一载置部,其载置由单片处理部进行处理前后的基片;第二载置部,其载置由批次处理部进行处理前的基片;以及输送装置,其将盒所收纳的基片输送到第一载置部和第二载置部。
Description
技术领域
本发明涉及基片处理系统、基片处理方法和存储介质。
背景技术
专利文献1中记载的基片处理系统具备批次处理部和单片处理部。批次处理部将经水洗处理的半导体晶片保持在水中。半导体晶片在将多个置于一个保持台的状态下进行药液处理。移送部将半导体晶片从缓冲槽逐一地拿起并移送到单片处理部。单片处理部将由移送部移送来的一个半导体晶片以主面成为水平的方式对其进行支承,并对基片进行干燥。
现有技术文献
专利文献
专利文献1:日本特开2021-064654号公报
发明内容
发明要解决的技术问题
本发明提供一种能够并行地实施包含批次处理及单片处理的复合处理、和单片处理的技术。
用于解决技术问题的技术方案
本发明的一个方式的基片处理系统包括:送入送出部,其送入送出收纳多个基片的盒;批次处理部,其对包含多个上述基片的基片组一并进行处理;单片处理部,其对上述基片逐一地进行处理;第一接口部,其将上述盒所收纳的上述基片在上述单片处理部与上述批次处理部之间进行分配;和第二接口部,其在上述批次处理部与上述单片处理部之间交接上述基片,上述第一接口部包括:第一载置部,其载置由上述单片处理部进行处理前后的上述基片;第二载置部,其载置由上述批次处理部进行处理前的上述基片;以及输送装置,其将上述盒所收纳的上述基片输送到上述第一载置部和上述第二载置部。
发明效果
依照本发明,能够并行地实施包含批次处理及单片处理的复合处理、和单片处理。
附图说明
图1是表示实施方式的基片处理系统的俯视图。
图2是表示实施方式的基片处理方法的流程图。
图3是表示实施方式的基片处理方法的复合处理的动作的图。
图4是表示实施方式的基片处理方法的单片处理的动作的图。
附图标记说明
1 基片处理系统
2 送入送出部
3 第一接口部
31 基片移载装置
32 基片组形成部
33 第一交接台
4 批次处理部
5 第二接口部
6 单片处理部
C 盒
L 基片组
W 基片。
具体实施方式
以下,参照附图,对本发明的非限定性的例示的实施方式进行说明。在所附的所有附图中,对相同或相应的部件或零件标注相同或相应的附图标记,并省略重复的说明。
(基片处理系统)
参照图1,对实施方式的基片处理系统进行说明。如图1所示,基片处理系统1具有送入送出部2、第一接口部3、批次处理部4、第二接口部5、单片处理部6和控制装置9。
送入送出部2兼作送入部和送出部。因此,能够使基片处理系统1小型化。送入送出部2具有装载端口21、存放栈22、装载器23和盒输送装置24。
装载端口21配置在送入送出部2的X轴方向负侧。装载端口21沿Y轴方向配置多个(例如4个)。但是,装载端口21的数量没有特别限定。在装载端口21能够载置盒C。盒C收纳多个(例如25个)基片W,并相对于装载端口21送入送出基片W。在盒C的内部,基片W被保持为水平的,在铅垂方向上以第一节距P1的N倍即第二节距P2(P2=N×P1)被保持。N为2以上的自然数,在本实施方式中为2,但也可以为3以上。
存放栈22在送入送出部2的X轴方向中央沿Y轴方向配置多个(例如4个)。存放栈22在送入送出部2的X轴方向正侧沿Y轴方向与第一接口部3相邻地配置多个(例如2个)。存放栈22也可以在铅垂方向上多层地配置。存放栈22暂时保管收纳有清洗处理前的基片W的盒C、取出基片W而内部变空的盒C等。另外,存放栈22的数量没有特别限定。
装载器23与第一接口部3相邻,配置在送入送出部2的X轴方向正侧。在装载器23能够载置盒C。在装载器23设置有用于开闭盒C的盖体的盖体开闭机构(未图示)。装载器23也可以设置多个。装载器23也可以在铅垂方向上多层地配置。
盒输送装置24例如是多关节输送机器人。盒输送装置24在装载端口21、存放栈22与装载器23之间输送盒C。
第一接口部3配置在送入送出部2的X轴方向正侧。第一接口部3在送入送出部2、批次处理部4与单片处理部6之间输送基片W。第一接口部3具有基片移载装置31、基片组形成部32和第一交接台33。
基片移载装置31在载置于装载器23的盒C、基片组形成部32与第一交接台33之间输送基片W。基片移载装置31将载置于装载器23的盒C所收纳的基片W在用于向单片处理部6输送的第一交接台33与用于向批次处理部4输送的基片组形成部32之间进行分配。基片移载装置31由多轴(例如6轴)臂机器人构成,在其前端具有基片保持臂31a。基片保持臂31a具有能够保持多个(例如25个)基片W的多个保持爪(未图示)。基片保持臂31a能够在利用保持爪保持基片W的状态下,在三维空间内采取任意的位置和姿势。
基片组形成部32配置在第一接口部3的X轴方向正侧。基片组形成部32以第一节距P1保持多个基片W,形成基片组L。
第一交接台33与单片处理部6相邻,配置在第一接口部3的Y轴方向正侧。第一交接台33包括用于载置由单片处理部6处理前的基片W的第一区域和用于载置由单片处理部6处理后的基片W的第二区域。第一区域和第二区域在铅垂方向上排列地配置。第二区域优选设置于比第一区域靠铅垂方向上层的位置。在该情况下,能够防止处理后的基片因处理前的基片的异物落下而被污染。在第一区域,多个基片W以第二节距P2被载置。第一区域构成为能够载置第一个数的基片W。第一个数例如是25个。第一个数例如是与盒C的基片W的收纳个数相同的个数。在第二区域,多个基片W以第二节距P2被载置。第二区域构成为能够载置第二个数的基片W。第二个数比第一个数多,例如为50个或100个。第二个数例如是与构成基片组L的基片W的个数相同的个数。基片组L由多个盒C的基片W构成。第一交接台33在第一区域中,从基片移载装置31接收基片W,暂时保管该基片W直至其被交送到单片处理部6。第一交接台33在第二区域中,从第四输送装置61接收基片W,暂时保管该基片W直至其被交送到送入送出部2。
批次处理部4配置在第一接口部3的X轴方向正侧。即,送入送出部2、第一接口部3、批次处理部4从X轴方向负侧朝向X轴方向正侧依次配置。批次处理部一并处理以第一节距P1包含多个(例如50个或100个)基片W的基片组L。一个基片组L由例如M个盒C的基片W构成。M为2以上的自然数。M可以是与N相同的自然数,也可以是与N不同的自然数。批次处理部4具有药液槽41、冲洗液槽42、第一输送装置43、处理具44和驱动装置45。
药液槽41和冲洗液槽42沿X轴方向配置。例如,药液槽41和冲洗液槽42从X轴方向正侧朝向X轴方向负侧依次排列。另外,也将药液槽41和冲洗液槽42统称为处理槽。药液槽41和冲洗液槽42的数量并不限定于图1的数量。例如,药液槽41和冲洗液槽42在图1中为一组,但也可以为多组。
药液槽41贮存供基片组L浸渍的药液。药液例如是磷酸水溶液(H3PO4)。磷酸水溶液有选择性地蚀刻并除去硅氧化膜和氮化硅膜中的氮化硅膜。药液并不限定于磷酸水溶液。例如,也可以是DHF(稀氢氟酸)、BHF(氢氟酸与氟化铵的混合液)、稀硫酸、SPM(硫酸、过氧化氢与水的混合液)、SC1(氨、过氧化氢与水的混合液)、SC2(盐酸、过氧化氢与水的混合液)、TMAH(氢氧化四甲铵与水的混合液)、镀敷液等。药液也可以是剥离处理用或镀敷处理用的。药液的数量没有特别限定,可以是多个。
冲洗液槽42贮存供基片组L浸渍的第一冲洗液。第一冲洗液是从基片W除去药液的纯水,例如是DIW(去离子水)。
第一输送装置43具有导轨43a和第一输送臂43b。导轨43a配置在比处理槽靠Y轴方向负侧的位置。导轨43a从第一接口部3向批次处理部4沿水平方向(X轴方向)延伸。第一输送臂43b沿导轨43a在水平方向(X轴方向)上移动。第一输送臂43b可以在铅垂方向上移动,也可以绕铅垂轴旋转。第一输送臂43b在第一接口部3与批次处理部4之间将基片组L一并输送。
处理具44从第一输送臂43b接收并保持基片组L。处理器44在Y轴方向上以第一节距P1保持多个基片W,多个基片W分别保持为铅垂的。
驱动装置45使处理具44在X轴方向和Z轴方向上移动。处理具44将基片组L浸渍在贮存于药液槽41的药液中,接着,将基片组L浸渍在贮存于冲洗液槽42的第一冲洗液中,然后,将基片组L交送到第一输送装置43。
处理具44和驱动装置45的单元的数量在本实施方式中为一个,但也可以为多个。在后者的情况下,一个单元将基片组L浸渍在贮存于药液槽41的药液中,另一单元将基片组L浸渍在贮存于冲洗液槽42的第一冲洗液中。在该情况下,驱动装置45只要使处理具44在Z轴方向上移动即可,也可以不使处理具44在X轴方向上移动。
第二接口部5配置在批次处理部4的Y轴方向正侧。第二接口部5在批次处理部4与单片处理部6之间输送基片W。第二接口部5具有浸渍槽51、第二输送装置52、第三输送装置53和第二交接台54。
浸渍槽51配置在第一输送臂43b的移动范围外。例如,浸渍槽51配置在相对于处理槽向Y轴方向正侧偏移的位置。浸渍槽51贮存供基片组L浸渍的第二冲洗液。第二冲洗液例如为DIW(去离子水)。基片W被保持在第二冲洗液中,直至被第三输送装置53从第二冲洗液提起。在第二冲洗液的液面之下存在基片W,因此第二冲洗液的表面张力不会作用于基片W,能够防止基片W的凹凸图案的倒塌。
第二输送装置52具有Y轴驱动装置52a、Z轴驱动装置52b和第二输送臂52c。
Y轴驱动装置52a配置在第二接口部5的X轴方向正侧。Y轴驱动装置52a从第二接口部5向批次处理部4沿水平方向(Y轴方向)延伸。Y轴驱动装置52a使Z轴驱动装置52b和第二输送臂52c在Y轴方向上移动。Y轴驱动装置52a可以包括滚珠丝杠。
Z轴驱动装置52b以能够移动的方式安装于Y轴驱动装置52a。Z轴驱动装置52b使第二输送臂52c在Z轴方向上移动。Z轴驱动装置52b可以包括滚珠丝杠。
第二输送臂52c以能够移动的方式安装于Z轴驱动装置52b。第二输送臂52c从第一输送臂43b接收并保持基片组L。第二输送臂52c在Y轴方向上以第一节距P1保持多个基片W,将多个基片W分别保持为沿铅垂方向的。第二输送臂52c通过Y轴驱动装置52a和Z轴驱动装置52b而在Y轴方向和Z轴方向上移动。第二输送臂52c构成为能够移动到包括交接位置、浸渍位置和待机位置在内的多个位置。
交接位置是在第一输送臂43b与第二输送臂52c之间进行基片组L的交接的位置。交接位置是Y轴方向负侧且Z轴方向正侧的位置。
浸渍位置是使基片组L浸渍于浸渍槽51的位置。浸渍位置是比交接位置靠Y轴方向正侧且Z轴方向负侧的位置。
待机位置是在不进行基片组L的交接和基片组L向浸渍槽51的浸渍时第二输送臂52c待机的位置。待机位置是交接位置的正下方(Z轴方向负侧),且不妨碍第一输送臂43b的移动的位置。在该情况下,第二输送臂52c仅通过向上方(Z轴方向正侧)的移动就能够移动到交接位置,因此生产率(through put)提高。待机位置也可以是与浸渍位置相同的位置。在该情况下,能够防止伴随第一输送装置43的动作而可能产生的颗粒附着到第二输送臂52c。待机位置也可以是浸渍位置的正上方(Z轴方向正侧)的位置。这样,通过将待机位置设定为与交接位置不同的位置,能够防止第一输送臂43b与第二输送臂52c的接触。
该第二输送装置52在第一输送装置43进行动作的期间,使第二输送臂52c移动到浸渍位置或待机位置。由此,能够防止第一输送臂43b与第二输送臂52c的接触。
第三输送装置53由多轴(例如6轴)臂机器人构成,在其前端具有第三输送臂53a。第三输送臂53a具有能够保持一个基片W的保持爪(未图示)。第三输送臂53a在利用保持爪保持着基片W的状态下,能够在三维空间内采取任意的位置和姿势。第三输送装置53在位于浸渍位置的第二输送臂52c与第二交接台54之间输送基片W。此时,由于浸渍槽51配置在第一输送臂43b的移动范围外,因此第一输送臂43b与第三输送臂53a不发生干扰。由此,能够使第一输送装置43和第三输送装置53中的一者与另一者的动作状态无关地独立进行动作。因此,能够在任意的时机使第一输送装置43和第三输送装置53进行动作,因此能够缩短输送基片W所需的时间。其结果是,基片处理系统1的生产率提高。
第二交接台54与单片处理部6相邻,配置在第二接口部5的X轴方向负侧。第二交接台54从第三输送装置53接收基片W,对该基片W进行暂时保管直至将其交送到单片处理部6。即,在第二交接台54能够载置从浸渍槽51取出的基片W。载置于第二交接台54的基片W优选为例如表面被第二冲洗液润湿的状态。在该情况下,第二冲洗液的表面张力不会作用于基片W,能够抑制基片W的凹凸图案的倒塌。在第二交接台54能够载置有多个(例如2个)基片W。
单片处理部6配置在第二接口部5的X轴方向负侧、且送入送出部2、第一接口部3和批次处理部4的Y轴方向正侧。单片处理部6对基片W逐一地进行处理。单片处理部6具有第四输送装置61、液处理装置62和干燥装置63。
第四输送装置61具有导轨61a和第四输送臂61b。导轨61a配置在单片处理部6的Y轴方向负侧。导轨61a在单片处理部6中沿水平方向(X轴方向)延伸。第四输送臂61b沿导轨61a在水平方向(X轴方向)和铅垂方向上移动,绕铅垂轴旋转。第四输送臂61b在第二交接台54、液处理装置62、干燥装置63与第一交接台33之间输送基片W。第四输送臂61b的数量可以是一个,也可以是多个,在后者的情况下,第四输送装置61一并输送多个(例如5个)基片W。
液处理装置62配置在单片处理部6的X轴方向正侧且Y轴方向正侧。液处理装置62为单片式的,利用处理液对基片W逐一地进行处理。液处理装置62在铅垂方向(Z轴方向)上配置多层(例如3层)。由此,能够同时利用处理液对多个基片W进行处理。处理液可以是多个,例如可以是DIW等纯水和表面张力低于纯水的干燥液。干燥液例如可以是IPA(异丙醇)等醇。
干燥装置63在X轴方向负侧与液处理装置62相邻地配置。在该情况下,能够以单片处理部6的Y轴方向正侧的端面与第二接口部5的Y轴方向正侧的端面成为同一平面或者大致同一平面的方式配置。因此,几乎不产生无效空间(dead space),因此能够减小基片处理系统1的占用空间。与此相对,当将干燥装置63在Y轴方向正侧与液处理装置62相邻地配置时,单片处理部6的Y轴方向正侧的端面比第二接口部5的Y轴方向正侧的端面突出,可能产生无效空间。干燥装置63为单片式的,利用超临界流体对基片W逐一地进行干燥。干燥装置63在铅垂方向上配置多层(例如3层)。由此,能够使多个基片W同时干燥。
也可以是液处理装置62和干燥装置63这两者不是单片式的,也可以是液处理装置62是单片式的且干燥装置63是批次式的。干燥装置63也可以利用超临界流体对多个基片W一并进行干燥。在干燥装置63中一并处理的基片W的个数可以是在液处理装置62中一并处理的基片W的个数以上,也可以比其少。除液处理装置62和干燥装置63以外的装置也可以配置在单片处理部6。
控制装置9例如是计算机,包括CPU(Central Processing Unit:中央处理器)91和存储器等存储介质92。在存储介质92中保存对在基片处理系统1中执行的各种处理进行控制的程序。控制装置9通过使CPU91执行存储于存储介质92的程序来控制基片处理系统1的动作。控制装置9包括输入接口93和输出接口94。控制装置9通过输入接口93接收来自外部的信号,通过输出接口94向外部发送信号。
上述程序存储于例如计算机可读取的存储介质,从该存储介质被安装到控制装置9的存储介质92。作为计算机可读取的存储介质,能够例举例如硬盘(HD)、软盘(FD)、光盘(CD)、磁光盘(MO)、存储卡等。此外,程序也可以经由互联网从服务器下载,安装到控制装置9的存储介质92中。
控制装置9构成为能够基于与送入至送入送出部2的盒C相关联的信息,控制基片移载装置31,以使得将盒C所收纳的多个基片W输送到第一交接台33和基片组形成部32中的任一者。该信息可以包含基片种类。例如,控制装置9在基片种类为产品基片的情况下,控制基片移载装置31以将盒C所收纳的基片W输送到基片组形成部32。例如,在基片种类为仿真基片的情况下,控制装置9控制基片移载装置31,以将盒C所收纳的基片W输送到第一交接台33。
以上说明的实施方式所涉及的基片处理系统具有送入送出部2、第一接口部3、批次处理部4、第二接口部5和单片处理部6。第一接口部3构成为能够位于送入送出部2的盒C所收纳的基片W在单片处理部6与批次处理部4之间进行分配。分配到单片处理部6的基片W在单片处理部6中进行单片处理。分配到批次处理部4的基片W在批次处理部4中进行批次处理。第二接口部5将实施了批次处理的基片W输送到单片处理部6。输送至单片处理部6的基片W在单片处理部6中进行单片处理。如上所述,对于位于送入送出部2的盒C所收纳的基片W,能够并行地实施包含批次处理及单片处理的复合处理、和不经由批次处理部4的单片处理。
(基片处理系统的动作)
参照图2~图4,对实施方式的基片处理系统1的动作、即基片处理方法进行说明。图2所示的处理在控制装置9的控制下实施。
首先,盒C在收纳有多个基片W的状态下被送入送入送出部2,并载置到装载端口21。在盒C的内部,基片W被保持为水平的,在铅垂方向上以第二节距P2(P2=N×P1)被保持。N为2以上的自然数,在本实施方式中为2,但也可以为3以上。
接着,盒输送装置24将盒C从装载端口21输送到装载器23(图3的箭头F1、图4的箭头G1)。当盒C被输送到装载器23时,由盖体开闭机构打开盒C的盖体。
接着,控制装置9控制基片处理系统1的各部,以使得进行图2所示的处理。控制装置9对基片处理系统1的各部进行控制,以使得每当在装载器23载置盒C时进行图2所示的处理。
首先,控制装置9在盒C被输送到装载器23时,基于与该盒C相关联的信息,判断对该盒C所收纳的多个基片W进行复合处理和单片处理中的哪一者(图2的S101)。
在图2的S101中,在判断为进行复合处理的情况下,控制装置9对基片处理系统1的各部进行控制,以将盒C所收纳的基片W输送到批次处理部4(图2的S102)。具体而言,基片移载装置31接收盒C所收纳的基片W,并输送到基片组形成部32(图3的箭头F2)。接着,基片组形成部32以第一节距P1(P1=P2/N)保持多个基片W,形成基片组L。一个基片组L由例如M个盒C的基片W构成。由于基片W的节距从第二节距P2变窄至第一节距P1,因此能够增加一并处理的基片W的个数。接着,第一输送装置43从基片组形成部32接收基片组L,并输送到处理具44(图3的箭头F3)。
接着,处理具44从药液槽41的上方下降,将基片组L浸渍于药液,进行药液处理(图2的S103)。之后,处理具44上升以从药液提起基片组L,接着朝向冲洗液槽42的上方在水平方向上(向X轴方向负侧)移动(图3的箭头F4)。
接着,处理具44从冲洗液槽42的上方下降,将基片组L浸渍于第一冲洗液,进行冲洗液处理(图2的S103)。之后,处理具44上升以从第一冲洗液提起基片组L。接着,第一输送装置43从处理具44接收基片组L,并交接到第二输送装置52。
接着,第二输送装置52的第二输送臂52c在水平方向上(向Y轴方向正侧)移动,从浸渍槽51的上方下降,将基片组L浸渍于第二冲洗液(图2的S104、图3的箭头F5)。基片组L的多个基片W被保持在第二冲洗液中,直至被第三输送装置53从第二冲洗液提起。由于在第二冲洗液的液面之下存在基片W,因此第二冲洗液的表面张力不会作用于基片W,能够防止基片W的凹凸图案的倒塌。
接着,第三输送装置53将在第二冲洗液中由第二输送臂52c保持的基片组L的基片W输送到第二交接台54(图3的箭头F6)。第三输送装置53将基片W逐一地输送到第二交接台54。
接着,第四输送装置61从第二交接台54接收基片W,并输送到液处理装置62(图3的箭头F7)。
接着,液处理装置62将基片W逐一地利用液体进行处理(图2的S105)。液体可以是多个,例如可以是DIW等纯水和表面张力低于纯水的干燥液。干燥液例如可以是IPA等醇。液处理装置62向基片W的上表面依次供给纯水和干燥液,形成干燥液的液膜。
接着,第四输送装置61从液处理装置62接收基片W,使干燥液的液膜朝上而水平地保持基片W。第四输送装置61将基片W从液处理装置62输送到干燥装置63(图3的箭头F8)。
接着,干燥装置63利用超临界流体对基片W逐一地进行干燥(图2的S105)。能够用超临界流体置换干燥液,能够抑制由干燥液的表面张力引起的基片W的凹凸图案的倒塌。超临界流体需要耐压容器,因此,为了使耐压容器小型化,不通过批次处理,而通过单片处理来进行。
另外,干燥装置63在本实施方式中为单片式的,但如上所述,也可以是批次式的。批次式的干燥装置63将形成有液膜的多个基片W一并用超临界流体进行干燥。单片式的干燥装置63具有一个保持基片W的输送臂,与此相对,批次式的干燥装置63具有多个输送臂。
另外,本实施方式的干燥装置63利用超临界流体对基片W进行干燥,但干燥的方式没有特别限定。干燥的方式只要能够抑制基片W的凹凸图案的倒塌即可,例如也可以是旋转干燥、扫动干燥或疏水干燥等。旋转干燥使基片W旋转,通过离心力将液膜从基片W甩掉。扫动干燥一边使干燥液的供给位置从基片W的中心朝向基片W的外周移动,一边使基片W旋转,通过离心力将液膜从基片W甩掉。扫到干燥还可以使N2气体等干燥气体的供给位置以跟随干燥液的供给位置的方式从基片W的中心朝向基片W的外周移动。
接着,第四输送装置61从干燥装置63接收基片W,并将其输送到第一交接台33(图3的箭头F9)。
接着,基片移载装置31从第一交接台33接收基片W,并将其收纳在载置于装载器23的盒C内(图2的S106、图3的箭头F10)。
接着,盒输送装置24将盒C从装载器23输送到装载端口21(图3的箭头F11)。输送至装载端口21的盒C在收纳有多个基片W的状态下从送入送出部2被送出。另外,盒输送装置24也可以将盒C从装载器23输送到存放栈22,在存放栈22中进行暂时保管。
在图2的S101中,在判断为进行单片处理的情况下,控制装置9控制基片处理系统1的各部,以将盒C所收纳的基片W输送到单片处理部6(图2的S107)。具体而言,基片移载装置31接收盒C所收纳的基片W,并将其输送到第一交接台33(图4的箭头G2)。接着,第四输送装置61从第一交接台33接收基片W,并将其输送到液处理装置62(图4的箭头G3)。
接着,与图2的S105同样地,液处理装置62利用液体对基片W逐一地进行处理,接着,干燥装置63利用超临界流体对基片W逐一地进行干燥(图2的S108、图4的箭头G4)。
接着,第四输送装置61从干燥装置63接收基片W,并将其输送到第一交接台33(图4的箭头G5)。
接着,基片移载装置31从第一交接台33接收基片W,并将其收纳在载置于装载器23的盒C内(图2的S109、图4的箭头G6)。
接着,盒输送装置24将盒C从装载器23输送到装载端口21(图4的箭头G7)。输送至装载端口21的盒C在收纳有多个基片W的状态下从送入送出部2被送出。另外,盒输送装置24也可以将盒C从装载器23输送到存放栈22,在存放栈22中进行暂时保管。
在以上说明的实施方式的基片处理方法中,例如当作为复合处理的对象的第一盒被输送到装载器23时,第一接口部3将第一盒所收纳的基片W分配给批次处理部4。
分配到批次处理部4的基片W在批次处理部4中进行批次处理。第二接口部5将进行了批次处理的基片W输送到单片处理部6。输送至单片处理部6的基片W在单片处理部6中进行单片处理。所输送的基片W在批次处理部4中进行批次处理。如上所述,分配到批次处理部4的基片W在进行包含批次处理和单片处理的复合处理后,被送回到位于装载器23的盒C。
在对从第一盒取出的基片W进行复合处理的中途,当作为单片处理的对象的第二盒被输送到装载器23时,第一接口部3将第二盒所收纳的基片W分配给单片处理部6。分配到单片处理部6的基片W在单片处理部6中进行单片处理。
如上所述,依照实施方式的基片处理方法,能够并行地实施包含批次处理及单片处理的复合处理、和不经由批次处理部4的单片处理。
作为复合处理的对象的第一盒例如是收纳产品基片的盒。作为单片处理的对象的第二盒例如是收纳仿真基片的盒。在该情况下,能够并行地实施针对产品基片的复合处理和使用仿真基片的单片处理部6中的仿真处理。作为仿真处理,能够举出例如对多层配置的干燥装置63中的至少一个干燥装置63进行部件更换等之后,在该干燥装置63中流通多个仿真基片而使该干燥装置63的清洁度提高的处理。仿真基片与产品基片不同,不需要批次处理(例如药液处理)。不经由批次处理部4而将仿真基片输送到单片处理部6,由此能够省略无用的输送,能够缩短仿真处理所需的时间。另外,也可以是第一盒收纳实施复合处理的第一产品基片,第二盒容纳仅实施单片处理的第二产品基片。
另外,作为单片处理的对象的第二盒也可以是收纳产品基片的盒。在该情况下,能够并行地实施针对产品基片的复合处理和针对产品基片的单片处理。另外,作为复合处理的对象的第一盒也可以是收纳仿真基片的盒。如上所述,第一盒和第二盒所收纳的基片的种类没有限定。另外,对于3个以上的盒C也同样能够并行地实施复合处理和单片处理。
本次公开的实施方式在所有方面均是例示而不应该认为是限制性的。上述的实施方式在不脱离所附的权利要求书(发明范围)及其主旨的情况下,能够以各种方式进行省略、替换、变更。
Claims (10)
1.一种基片处理系统,其特征在于,包括:
送入送出部,其送入送出收纳多个基片的盒;
批次处理部,其对包含多个所述基片的基片组一并进行处理;
单片处理部,其对所述基片逐一地进行处理;
第一接口部,其将所述盒所收纳的所述基片在所述单片处理部与所述批次处理部之间进行分配;和
第二接口部,其在所述批次处理部与所述单片处理部之间交接所述基片,
所述第一接口部包括:
第一载置部,其载置由所述单片处理部进行处理前后的所述基片;
第二载置部,其载置由所述批次处理部进行处理前的所述基片;以及
输送装置,其将所述盒所收纳的所述基片输送到所述第一载置部和所述第二载置部。
2.如权利要求1所述的基片处理系统,其特征在于:
所述第一载置部包括:
第一区域,其载置由所述单片处理部进行处理前的所述基片;和
第二区域,其载置由所述单片处理部进行了处理后的所述基片,
所述第一区域和所述第二区域在铅垂方向上排列地配置。
3.如权利要求2所述的基片处理系统,其特征在于:
所述第一区域能够载置第一个数的所述基片,
所述第二区域能够载置第二个数的所述基片,
所述第二个数比所述第一个数多。
4.如权利要求2或3所述的基片处理系统,其特征在于:
所述第二区域设置于比所述第一区域靠铅垂方向上层的位置。
5.如权利要求1至3中任一项所述的基片处理系统,其特征在于:
所述基片组以第一节距包含多个所述基片,
所述第一载置部以第二节距载置所述基片,其中,所述第二节距是所述第一节距的N倍,N为2以上的自然数。
6.如权利要求5所述的基片处理系统,其特征在于:
所述盒以所述第二节距收纳所述基片。
7.如权利要求1至3中任一项所述的基片处理系统,其特征在于:
所述基片处理系统具有控制装置,
所述控制装置构成为能够基于与送入到所述送入送出部的所述盒相关联的信息来控制所述输送装置,以将所述盒所收纳的多个所述基片输送到所述第一载置部和所述第二载置部中的任一者。
8.一种基片处理方法,其特征在于:
所述基片处理方法是基片处理系统中的基片处理方法,
所述基片处理系统包括:
送入送出部,其送入送出收纳多个基片的盒;
批次处理部,其对包含多个所述基片的基片组一并进行处理;和
单片处理部,其对所述基片逐一地进行处理;
所述基片处理方法包括:
(a)将所述盒所收纳的所述基片不经由所述批次处理部地输送到所述单片处理部,在所述单片处理部中对所述基片进行了处理之后将所述基片送回到所述盒;
(b)将包含所述盒所收纳的多个所述基片在内的所述基片组输送到所述批次处理部,在所述批次处理部中对所述基片组一并进行处理;和
(c)将在所述批次处理部中进行了处理后的所述基片组从所述批次处理部输送到所述单片处理部,在所述单片处理部中对所述基片进行了处理之后将所述基片送回到所述盒。
9.如权利要求8所述的基片处理方法,其特征在于:
并行地进行所述(a)、所述(b)和所述(c)。
10.一种计算机可读取的存储介质,其特征在于:
存储有用于使计算机执行权利要求8或9所述的基片处理方法的程序。
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