CN116544124A - 制造半导体设备的方法和对应的半导体设备 - Google Patents
制造半导体设备的方法和对应的半导体设备 Download PDFInfo
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- CN116544124A CN116544124A CN202310047032.6A CN202310047032A CN116544124A CN 116544124 A CN116544124 A CN 116544124A CN 202310047032 A CN202310047032 A CN 202310047032A CN 116544124 A CN116544124 A CN 116544124A
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- integrated circuit
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 238000003466 welding Methods 0.000 claims abstract description 33
- 230000008878 coupling Effects 0.000 claims abstract description 24
- 238000010168 coupling process Methods 0.000 claims abstract description 24
- 238000005859 coupling reaction Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 19
- 238000005476 soldering Methods 0.000 claims abstract description 9
- 229910000679 solder Inorganic materials 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 14
- 239000003292 glue Substances 0.000 claims description 10
- 238000004049 embossing Methods 0.000 claims 1
- 230000008569 process Effects 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
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- 239000004593 Epoxy Substances 0.000 description 1
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- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
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- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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Abstract
本公开的实施例涉及制造半导体设备的方法和对应的半导体设备。一种半导体设备包括被布置在引线框的导电焊盘和半导体集成电路芯片之间的桥状位置中的导电夹具。导电夹具经由被施加在面向半导体集成电路芯片和导电焊盘的耦接表面处的焊接材料而被焊接到半导体集成电路芯片和导电焊盘。在焊接之前,经由在专用固定区域处的熔接(诸如激光熔接)或胶合中的一种而将夹具固定在期望的桥状位置中。
Description
优先权声明
本申请要求于2022年2月1日提交的意大利专利申请号102022000001649的优先权,在法律允许的最大范围内将其整体通过引用并入本文。
技术领域
本说明涉及半导体设备。一个或多个实施例可以有利地应用于功率半导体设备。
背景技术
具有塑料封装的各种类型的半导体设备包括:衬底(引线框),在其上布置有一个或多个半导体集成电路芯片或裸片;导电构件(导线、带状物、夹具),将(一个或多个)半导体芯片耦接到衬底中的引线(外部焊盘);以及绝缘封装(例如,树脂),被模制在组装件上,所述组装件被如此形成以完成设备的塑料主体。
在功率半导体设备中,从高功率部分传送到设备的输出焊盘的电流可以很大,并且为此目的使用带状物或夹具取代导线。导线仍然可以被用来为设备中的低功率部分(例如控制器)提供电耦接。
基本上使用焊线工艺来放置带状物。用夹具附着装置来放置夹具,并且焊膏被用于将夹具连接到焊盘和裸片。应用在炉中进行焊料固化的方式以提供夹具与焊盘和裸片的牢固连接。
因为夹具被应用到裸片和焊盘上,传统的夹具附着装置有助于实现足够的芯片放置准确度,在此之后组装件被转移到炉以进行焊料固化。在此处理和固化过程期间,夹具可能会偏离期望的正确位置。这可能导致有缺陷的最终产品。焊料厚度以及夹具在流体状态下“漂浮”在焊料上的倾向也可能是不希望的夹具过度倾斜的原因。
因此,本领域需要有对充分解决前面讨论的问题作出贡献。
发明内容
一个或多个实施例涉及一种方法。一个或多个实施例可以涉及对应的半导体设备。
一个或多个实施例可以提供以下优点中的一种或多种:在整个组装过程中促进准确的夹具定位,同时有效地抵消不希望的移动(例如,旋转);以及焊料厚度可以被恰当地控制。
在一个实施例中,一种方法包括:将至少一个半导体芯片布置在衬底中的裸片焊盘上,该衬底包括在裸片焊盘旁边的至少一个导电焊盘;将至少一个导电夹具定位在至少一个半导体芯片和至少一个导电焊盘之间的桥状位置中,其中在该桥状位置中,至少一个导电夹具具有面向至少一个半导体芯片和至少一个导电焊盘的耦接表面;以及将在该桥状位置中的至少一个导电夹具焊接到至少一个半导体芯片和至少一个导电焊盘以提供它们之间的电耦接,其中焊接是经由该耦接表面处的焊接材料进行的。此外,该方法包括,在焊接之前,经由熔接或胶合而将桥状位置中的至少一个导电夹具固定在到至少一个导电焊盘和至少一个半导体芯片。
在一个实施例中,一种设备包括:至少一个半导体芯片,在衬底中的裸片焊盘上,该衬底包括在裸片焊盘旁边的至少一个导电焊盘;至少一个导电夹具,被定位在至少一个半导体芯片和至少一个导电焊盘之间的桥状位置中,该至少一个导电夹具具有面向至少一个半导体和至少一个导电焊盘的耦接表面;以及焊料材料,在该桥状位置中被施加在该至少一个导电夹具的该耦接表面处,该焊料材料将至少一个导电夹具电耦接到至少一个半导体芯片和至少一个导电焊盘。此外,除了焊料材料之外,桥状位置中的至少一个导电夹具经由熔接(优选为激光熔接)或胶合而被固定到至少一个导电焊盘和至少一个半导体芯片。
附图说明
现在将参考附图以仅作为示例的方式描述一个或多个实施例,在附图中:
图1是功率半导体设备的透视图;
图2是沿着图1的线II-II的剖视图;
图3图示了在如图1和图2中所图示的设备的元件(夹具)中实现本说明的实施例的可能方式;
图4是单独示出的图3的被修改元件的透视图;
图5是放大比例后再现的图4中由箭头V指示的部分的视图;
图6是从不同视角观察到的图4中所图示的元件的透视图;
图7图示了在如图1和图2中所图示的设备的元件(夹具)中实现本说明的实施例的另一种可能方式;
图8是单独示出的图3的被修改元件的透视图;以及
图9是从不同视角观察到的图7中所图示的元件的透视图。
具体实施方式
除非另有说明,否则不同附图中对应的数字和符号通常指代对应的部分。
附图是为了清楚地图示实施例的相关方面而绘制的,并且不必按比例绘制。
附图中绘制的特征的边缘不一定指示特征范围的终止。
在随后的说明中,图示了一个或多个特定细节,旨在提供对本说明的实施例的示例的深入理解。可以在没有一个或多个特定细节的情况下,或者通过其他方法、组件、材料等等来获得实施例。在其他情况下,未详细例示或描述已知的结构、材料或操作,从而使实施例的某些方面将不会被混淆。
在本说明的框架中对“实施例”或“一个实施例”的引用旨在指示关于该实施例描述的特定配置、结构或特性被包括在至少一个实施例中。因此,在本说明的一个或多个点中可能出现的诸如“在实施例中”或“在一个实施例中”之类的短语不一定指代一个实施例或相同实施例。
此外,在一个或多个实施例中,可以以任何适当的方式组合特定构造、结构或特性。
在本文中使用的标题/附图标记仅为方便起见而提供,因此不限定保护范围或实施例的范围。
为了简单和易于解释,贯穿本说明,在各个附图中用相似的附图标记来指示相似的零件或元件,并且将不再针对每个附图重复对应的说明。
在半导体设备的当前制造过程中,多个设备被同时制造以在最终分割中被分离成单个单独的设备。为了简单和易于解释,以下说明将参考制造单个设备。
图1是具有塑料封装的功率半导体设备10的示例。
如本领域中常规的那样,设备10包括在其上布置有一个或多个半导体集成电路芯片或裸片的衬底(引线框)12。如本文中所使用的,术语芯片和裸片被视为同义词。
这些图以实例方式例示了半导体功率设备10,该半导体功率设备10包括附着在引线框12中的第一裸片焊盘121A上的低功率部分(例如,控制器集成电路裸片141)和附着在引线框架12中的一个或多个裸片焊盘122A上的高功率部分(例如,一个或多个功率集成电路裸片142),其中围绕裸片焊盘121A、122A的引线12B的阵列具有安装在其上的裸片141和142。
当前使用(例如参见美国专利和商标局的USPC综合词汇表)名称“引线框”(或“引线框架”)来指示为集成电路芯片或裸片提供支撑的金属框架以及将裸片或芯片中的集成电路互连到其他电子元件或触点的电引线。
本质上,引线框包括导电构件(或引线,例如12B)的阵列,其从轮廓位置在半导体芯片或裸片(例如,141、142)的方向上向内延伸,从而形成自裸片焊盘(例如,121A、122A)的导电构件,该裸片焊盘被配置为具有附着在其上的至少一个半导体芯片或裸片。这可以通过诸如裸片附着粘合剂1420(例如裸片附着膜(DAF))之类的常规方式来实现。
如图1中所图示的设备10旨在使用例如焊料材料而安装在诸如印刷电路板(PCB,在图中不可见)的衬底上。
提供导电构件以将(一个或多个)半导体芯片141、142电耦接到引线框12中的引线(外部焊盘)12B中的选定引线。
如所图示,这些导电构件包括导线接合图案16,其将低功率部分(芯片141)耦接到引线12B中的选定引线以及高功率部分(一个或多个芯片142)。这些导线接合图案16耦接到被提供在芯片141和142的前表面或顶表面处的裸片焊盘1410。
相反,所谓的夹具18被用于将高功率部分(一个或多个芯片142)耦接到充当设备10的(功率)输出焊盘的引线12B中的选定引线。
使用夹具18取代被包括在导线接合图案16中的导线(被用于提供与低功率部分例如控制器141的电耦接)考虑了从高功率部分142传送到功率半导体设备中的输出焊盘的电流可能很大这一事实。如所指出的,诸如导线16之类的导线仍然被用于提供到设备中的低功率部分(例如,控制器)的电耦接。
绝缘封装20(例如,环氧树脂)被模制在组装件上,该组装件被如此形成以完成设备10的塑料主体。
虽然所示设备10包括两个夹具18,但是某些设备可以仅包括一个夹具或包括两个以上的夹具。
至此,所讨论的设备结构在本领域中或多或少是常规的,因此无需在此提供更详细的描述。
总而言之,为了本文的目的,生产本文所讨论的设备10包括:在衬底12中的裸片焊盘12A上布置至少一个半导体芯片142,该衬底12包括在裸片焊盘12A旁边(也就是说,相邻或侧向)的至少一个导电焊盘12B;以及将至少一个导电夹具18定位在至少一个半导体芯片142与至少一个导电焊盘12B之间的桥状位置(bridge-like position)。
在这种桥状位置中,导电夹具18具有面向半导体芯片142和导电焊盘12B的耦接表面。
位于所述桥状位置中的导电夹具18被焊接到半导体芯片142和导电焊盘12B以提供它们之间的电耦接。
如所图示,焊接是经由在所述耦接表面处分配(以本领域技术人员本身已知的方式)的焊接材料22来进行的。焊接材料22例如经由在炉中的热处理而被被固结(同样以本领域技术人员本身已知的方式)。
如所讨论的,使用夹具附着装置放置诸如夹具18之类的夹具,并且使用焊膏22以将夹具连接到焊盘和裸片。在炉中进行焊料固化以提供夹具18到焊盘(例如12B)和裸片(例如142)的紧密连接。
由于夹具18像桥一样被应用在裸片(诸如裸片142)和相应的焊盘/引线(诸如焊盘/引线12A)之间,常规的夹具附着装置有助于实现芯片放置的足够准确度:为了简单起见而考虑了这种情况;在某些设备中,单独的夹具18可以被耦接到例如多个焊盘/引线。
在夹具放置之后,组装件被转移到炉中进行焊料固化。在此处理和固化过程期间,夹具可能会变得偏离期望的正确位置,这可能会导致有缺陷的最终产品。
焊料22的厚度和夹具在流体状态下“漂浮”在焊料22上的倾向也可能是不希望的夹具过度倾斜的基础。
可以通过在夹具和引线框设计中添加固定特征来尝试抵消不希望的夹具移动(位移)。
顺畅的处理也可能有助于在夹具放置中非常准确地使夹具居中。
还可以考虑选择焊膏材料来抵消不希望的夹具漂浮性能。
由于各种原因,这些解决方案中没有一个看起来完全令人满意。
例如,添加到夹具/引线框设计的某些特征可能会消耗空间,这可能暗示着减小焊盘尺寸和/或使用更大封装尺寸来获得空间,这两者都是没有吸引力的/不希望的。
所涉及的部分的处理已经以相当温和的方式来达成,并且很难想象在那个方向上进一步改进。
选择不同于那些常规使用的焊膏材料可能会对热性能和电气性能产生负面影响。
在本文所考虑的示例中,在焊接之前,经由熔接(例如,激光熔接)或胶合,在一个或多个专用固定区域处(例如,如由图1中的附图标记180一般性地指示)将一个或多个夹具18固定在期望的桥状位置中。
如下文所讨论的,固定区域180可以例如通过压印而适当地形成和成形,以便被配置为促进(一个或多个)夹具18的熔接或胶合。
因此,本文所考虑的示例基于在期望的桥状位置中将(一个或多个)夹具18耦接到(一个或多个)芯片142和(一个或多个)焊盘或(一个或多个)引线12B的“固缝”(tacking)或“加固”(basting)的概念,以使得(一个或多个)夹具在焊接期间被固定,并且保持在这样的位置,从而抵消不希望的位移(例如,平移/旋转/倾斜)。
在各种示例中,这涉及搁置在引线框12(例如,在引线或焊盘12B处)上的夹具18的阶梯状横向部分,并且为夹具18的激光熔接或胶合提供平坦的接触区域。
图3至图6是修改如图1和图2中所图示的夹具18的可能性的示例,以便于促进通过如图3中的附图标记LB所例示的激光熔接来“固缝”或“加固”(一个或多个)夹具18的耦接。
图7至图9是修改在区域或区180处如图1和图2中所图示的夹具18的可能性的示例,以便于促进通过如图7中的附图标记G所例示的胶合来“固缝”或“加固”(一个或多个)夹具18的耦接。
在任何一种情况下(激光熔接、胶合),都考虑了提供焊料材料22以促进夹具18与引线12B的电耦接的事实。
为了避免夹具18相对于期望的桥状耦接位置发生不希望的分离/位移,使用一个或多个专用夹具区域180来施加(微点)激光熔接LB(图3至图6)或胶合G(例如,经由HenkelAG&Co KGaA提供的商品名为3609的胶合剂)(图7至图9)。
以这种方式,夹具18可以在夹具附着到夹杆上之后通过激光熔接而被预先固定。这种微熔接促进稳固的夹具定位,直到焊膏22熔化之后进行钎焊。
另外,(一个或多个)夹具18在回流期间维持裸片141的良好放置,避免平移和旋转。
在夹具边缘处的平坦熔接区域180还促进夹具平面度,与传统工艺相比,这导致板级测试(BLT)中的改进结果。
在制造夹杆时,可以实现特定熔接区域(例如,通过压印),诸如由图3至图6中的附图标记180所指示的熔接区域。
上述几点也同样地适用于如图7至图9中所呈现的用于胶合的专用夹具区域180。
除了焊膏之外,还可以将由图7中的附图标记G所指示的胶滴分配在引线框的夹杆上,在回流隧道炉中的预热期间进行胶固化。这种胶合有助于稳固的夹具定位,直到焊膏22熔化之后进行钎焊。
另外,胶合的(一个或多个)夹具18在回流期间维持裸片141放置良好。
与传统工艺相比,再次促进了改进的夹具平面度。
在这两种实例中(激光熔接、胶合),夹具和裸片在组装过程期间都被维持在期望的位置。
如所图示,在整个附图中,诸如夹具18之类的夹具呈现出(以本身已知的方式)弯曲的形状,其远端部分18A被配置为耦接到(一个或多个)引线,12B并且因此至少略微下沉以允许芯片142的厚度。
有利地,在这种远端部分18A处提供专用的“固缝”或“加固”(激光熔接、胶合)区域180。
有利地,一对这样的区域180被提供在远端部分18A的对侧端部处。
如诸如图4或图8之类的附图中所见,(一个或多个)区域180至少略微从夹具18(的远端部分18A)的总平面突出。如图3和图7中可见,这导致形成密封壁(在图4、图5、图6、图8和图9中用附图标记1800指示)以促进焊膏22的容纳。
以此方式,一旦(一个或多个)区域180被固定(熔接或胶合)到引线12B,则在远端部分18A的其余部分和引线12B之间形成间隙。
如在诸如图3或图7之类的附图中可见,处于熔融状态的焊膏22可以渗透到这样的间隙中以提供厚度受控的焊料层。
未发现区域180的形状本身代表关键参数。
如图3至图6中所图示,然而发现圆形形状对于用于激光熔接LB的区域180是有利的。
如图7至图9中所图示,发现矩形(或正方形)形状对于用于胶合G的区域180是有利的。
此处所呈现的示例促进在装配过程期间维持精确的夹具“居中”。
避免了不希望的夹具移动和旋转,并且可以充分控制焊料厚度。
在此处呈现的示例中,示出了专用熔接/胶合区域180形成在夹具端部18A处的情形,其旨在与引线框12中的焊盘/引线12B协作。
原则上(至少就胶合而言)这样的区域180也可以形成或仅形成在夹具18的对侧端部处,即在旨在与芯片141协作的端部处。
应注意的是,专用熔接/胶合区域180的存在在最终设备中也将是明显的,其中(一个或多个)夹具18将通过以下内容的联合作用而被固定在期望的桥状位置中:焊料材料22;以及激光熔接(本身可识别)或被用于在焊接期间固定夹具的大量胶合剂。
在不损害基本原则的情况下,细节和实施例可以在不背离保护范围的情况下相对于仅通过示例描述的内容而发生变化,甚至是显著变化。
权利要求是关于本文所提供的实施例的技术教导的组成部分。
保护范围由所附权利要求来确定。
Claims (21)
1.一种方法,包括:
将半导体集成电路芯片布置在衬底中的裸片焊盘上,所述衬底包括裸片焊盘旁边的导电焊盘;
将导电夹具定位在半导体集成电路芯片和所述导电焊盘之间的桥状位置中,其中所述导电夹具在所述桥状位置中具有面向所述半导体集成电路芯片和所述导电焊盘的耦接表面;
经由熔接或胶合中的一种而将所述桥状位置中的所述导电夹具固定到所述导电焊盘和所述半导体集成电路芯片中的至少一者;以及
将经由熔接或胶合中的一种而被固定在所述桥状位置中的所述导电夹具焊接到所述半导体集成电路芯片和所述导电焊盘,以提供所述半导体集成电路芯片和所述导电焊盘之间的电耦接,其中焊接是经由在所述耦接表面处的焊接材料进行的。
2.根据权利要求1所述的方法,其中所述熔接是激光熔接。
3.根据权利要求1所述的方法,其中固定包括:分配与所述焊接材料同时被分配的胶合材料,其中所述胶合材料将所述导电夹具胶合到所述导电焊盘和所述半导体集成电路芯片中的所述至少一者。
4.根据权利要求1所述的方法,还包括:在所述导电夹具中提供被配置用于所述熔接或所述胶合的专用固定区域。
5.根据权利要求4所述的方法,其中提供包括:压印以形成所述专用固定区域。
6.根据权利要求4所述的方法,其中所述专用固定区域从所述导电夹具突出以形成用于所述焊接材料的横向容纳壁。
7.根据权利要求6所述的方法,其中所述专用固定区域是平面的。
8.根据权利要求7所述的方法,其中所述专用固定区域具有圆形形状或四边形形状中的一种。
9.根据权利要求4所述的方法,还包括:在所述导电夹具的远端部分中形成所述专用固定区域。
10.根据权利要求9所述的方法,其中所述导电夹具的所述远端部分相对于所述导电夹具的邻近所述半导体集成电路芯片的顶表面的部分向下设置。
11.根据权利要求9所述的方法,还包括:在所述导电夹具的所述远端部分的对侧端部处提供一对专用固定区域。
12.一种设备,包括:
衬底,包括导电焊盘和裸片焊盘;
半导体集成电路芯片,被安装到所述衬底的所述裸片焊盘;
导电夹具,被定位在所述半导体集成电路芯片和所述导电焊盘之间的桥状位置中,所述导电夹具具有面向所述半导体集成电路芯片和所述导电焊盘的耦接表面;
焊料材料,被施加在所述桥状位置中的所述导电夹具的所述耦接表面处,所述焊料材料将所述导电夹具电耦接到所述半导体集成电路芯片和导电焊盘;以及
除了所述焊料材料之外的熔料或胶合剂,所述熔料或所述胶合剂在所述桥状位置中将所述导电夹具固定到所述导电焊盘和所述半导体集成电路芯片中的至少一者。
13.根据权利要求12所述的设备,其中所述熔料包括激光熔料。
14.根据权利要求12所述的设备,其中所述导电夹具包括被施加所述熔料或所述胶合剂的专用固定区域。
15.根据权利要求14所述的设备,其中所述专用固定区域从所述导电夹具突出以形成用于所述焊接材料的横向容纳壁。
16.根据权利要求14所述的设备,其中所述专用固定区域是平面的。
17.根据权利要求16所述的设备,其中所述专用固定区域具有圆形形状或四边形形状中的一种。
18.根据权利要求14所述的设备,其中所述专用固定区域被提供在所述导电夹具的远端部分中。
19.根据权利要求18所述的设备,其中所述导电夹具的所述远端部分相对于所述导电夹具的邻近所述半导体集成电路芯片的顶表面的部分向下设置。
20.根据权利要求18所述的设备,还包括:在所述导电夹具的所述远端部分的对侧端部处的一对专用固定区域。
21.根据权利要求12所述的设备,其中所述半导体集成电路芯片是功率半导体集成电路,并且其中所述导电夹具的大小和尺寸被设计成承载由所述功率半导体集成电路产生的电流。
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