CN116487467A - 一种硅基铁电异质结光电探测器及其制备方法和应用 - Google Patents
一种硅基铁电异质结光电探测器及其制备方法和应用 Download PDFInfo
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Abstract
本发明提供了一种硅基铁电异质结光电探测器及其制备方法和应用，属于信息技术领域；本发明通过在Si硅衬底表面上制备铁电薄膜材料，然后在Si硅衬底和铁电薄膜材料上沉积薄金属电极来构建硅基铁电异质结光电探测器；所述硅基铁电异质结光电探测器能够实现紫外‑可见‑近红外宽光谱和波长可选择光探测的目的，其在300‑900nm宽光谱和300‑340nm紫外/380‑900nm可见光‑近红外波长下均可进行可选择光探测，具有很强的工业实用性。
Description
技术领域
本发明属于信息技术领域，具体涉及一种硅基铁电异质结光电探测器及其制备方法和应用。
背景技术
半导体光电探测器是一种把光信号转换成电信号的光电子器件，其广泛应用于光通信、成像、传感等领域。目前，光电探测器主要包括金属/半导体/金属、半导体同质pn结或异质pn结等结构，通过界面电场光伏效应，实现单波段窄光谱或宽光谱、双波段宽光谱光探测的目的。
虽然宽光谱和波长可选择光电探测器可以有选择性地探测光谱信号，极大地拓展了器件的功能。但是，由于内建电场形成规律的制约，光电探测器中宽光谱和双波段波长可选择的光探测难以兼得。尽管利用带通滤光片技术可以实现宽光谱和波长可选择光探测，但这大幅增加了器件的尺寸和制备成本，限制了它们的应用。
针对上述问题，研究人员提出通过入射光波长诱导光电流方向翻转的策略，构建了热电异质结光电探测器和电化学电池两类器件，实现了紫外-可见-红外宽光谱和波长可选择光探测的结果。但这两类器件均易受环境(如高温)影响，存在一定的局限性，从而限制了它们的应用。因此，开发一种结构简单、性能稳定的宽光谱和波长可选择光电探测器对于发展新型多功能光电子器件具有重要意义。
发明内容
针对现有技术中存在不足，本发明提供了一种硅基铁电异质结光电探测器及其制备方法和应用；本发明通过在Si硅衬底表面上制备铁电薄膜材料，然后在Si硅衬底和铁电薄膜材料上沉积薄金属电极来构建硅基铁电异质结光电探测器；所述硅基铁电异质结光电探测器能够实现紫外-可见-近红外宽光谱和波长可选择光探测的目的，其在300-900nm宽光谱和300-340nm紫外/380-900nm可见光-近红外波长下均可进行可选择光探测，具有很强的工业实用性。
为了解决上述技术问题，本发明采用以下技术手段：
本发明首先提供一种硅基铁电异质结光电探测器，所述硅基铁电异质结光电探测器包括Si衬底和Si衬底表面上生长的PbZrxTi1-xO3铁电薄膜，所述Si衬底和PbZrxTi1-xO3铁电薄膜的表面沉积有薄金属电极；其中0<x<1。
优选地，所述Si衬底为n或p型Si。
优选地，所述PbZrxTi1-xO3铁电薄膜的厚度为10～1000nm。
优选地，所述薄金属电极包括钛、金、钼、钨或银中的一种或多种。
优选地，所述薄金属电极的沉积厚度为10～40nm。
优选地，所述薄金属电极的形状为圆形或正方形，面积为0.01～0.15mm2。
本发明还提供了上述硅基铁电异质结光电探测器的制备方法，具体包括如下步骤：
在清洗干净的Si衬底表面生长PbZrxTi1-xO3铁电薄膜，然后将部分PbZrxTi1-xO3铁电薄膜刻蚀裸露出Si衬底，分别在Si衬底和PbZrxTi1-xO3铁电薄膜表面沉积薄金属电极，得到所述硅基铁电异质结光电探测器。
优选地，所述Si衬底的清洗步骤包括：
(1)依次使用丙酮、无水乙醇和去离子水对硅片进行超声清洗，去除硅片表面油污等污渍，然后使用氮气干燥处理；
(2)将硅片放置在氢氟酸中浸泡，去除硅表面自然氧化层；
(3)依次使用乙醇和去离子水对硅片进行清洗，去除硅片表面氢氟酸杂质，然后使用氮气干燥处理，得到清洗干净的硅片。
优选地，在Si衬底表面上通过磁控溅射法生长PbZrxTi1-xO3铁电薄膜；
所述磁控溅射法生长PbZrxTi1-xO3铁电薄膜的步骤如下：
(1)将PbZrxTi1-xO3靶材和清洗干净的Si衬底放置在磁控溅射生长室中，并将生长室真空抽至10-4Pa以下；
(2)在上述真空环境下对Si衬底进行退火处理，退火温度为300～400℃，退火时间为10～30分钟；
(3)PbZrxTi1-xO3靶材预溅射处理：缓慢通入Ar并调节生长室压力，打开溅射电源，在低功率下溅射PbZrxTi1-xO3靶材，去除PbZrxTi1-xO3靶材表面的污渍；所述预溅射功率为20～100W，预溅射时间为10～30分钟；
(4)溅射生长PbZrxTi1-xO3铁电薄膜：PbZrxTi1-xO3靶材预溅射处理后关闭溅射电源，然后缓慢通入O2并调节生长室压力，打开溅射电源并设定功率值，打开Si衬底表面处挡板进行PbZrxTi1-xO3铁电薄膜的生长，生长结束后关闭Si衬底表面处挡板，关闭溅射电源，关闭衬底加热电源，衬底自然降至室温。
其中，PbZrxTi1-xO3铁电薄膜生长时，Si衬底温度为400～650℃，溅射功率为50～200W，Ar/O2比为10:1～5:1，生长室压力为0.1～5Pa，生长时间为30～300分钟。
优选地，采用热蒸发法或电子束蒸镀法在Si衬底和PbZrxTi1-xO3铁电薄膜表面镀上薄金属电极。
优选地，薄金属电极的生长速度为金属电极的厚度为10～40nm。
本发明还提供了上述硅基铁电异质结光电探测器在300-900nm宽光谱、300-340nm紫外或380-900nm可见光-近红外波长下可选择光探测中的应用。
与现有技术相比，本发明的有益效果在于：
本发明通过在Si硅衬底表面上制备铁电薄膜材料，然后在Si硅衬底和铁电薄膜材料上沉积薄金属电极来构建硅基铁电异质结光电探测器；所述硅基铁电异质结光电探测器利用铁电薄膜PbZrxTi1-xO3退极化场和PbZrxTi1-xO3/Si异质结界面电场调控电子和空穴载流子的输运，实现了宽光谱和波长可选择光探测的结果。
本发明所述硅基铁电异质结光电探测器结合了铁电极化引起的退极化场和异质结界面电场，这两类电场具有热稳定性高的优点，因此本发明硅基铁电异质结光电探测器耐高温、性能稳定，克服了热电异质结光电探测器和电化学电池两类器件易受环境影响的不足。
本发明所述硅基铁电异质结光电探测器能够实现紫外-可见-近红外宽光谱和波长可选择光探测的目的，其在300-900nm宽光谱、300-340nm紫外以及380-900nm可见光-近红外波长下均可进行可选择光探测。并且。所述硅基铁电异质结光电探测器在实际工作中无需结合带通滤光片，大幅简化了器件的尺寸和制造成本，对发展新型多功能光电子器件具有重要意义。
附图说明
图1为本发明所述硅基铁电异质结光电探测器的结构示意图。
图2为本发明所述硅基铁电异质结光电探测器的剖面结构示意图。
附图标记：
1-Si衬底；2-PbZrxTi1-xO3铁电薄膜；3-薄金属电极。
具体实施方式
下面结合附图以及具体实施例对本发明作进一步的说明，但本发明的保护范围并不限于此。
实施例1：
如图1～2所示，本发明所述硅基铁电异质结光电探测器包括Si衬底和Si衬底表面上生长的PbZrxTi1-xO3铁电薄膜，所述Si衬底和PbZrxTi1-xO3铁电薄膜的表面沉积有薄金属电极。其中，PbZrxTi1-xO3铁电薄膜的厚度为10～1000nm，所述PbZrxTi1-xO3铁电薄膜中通过调整Zr和Ti的组分占比来调节禁带宽度和铁电性。
本实施例中，所述薄金属电极选用金(Au)电极，所述Au电极的厚度为10nm。所述硅基铁电异质结光电探测器的具体制备方法包括如下步骤：
(1)清洗Si衬底：
选用p型Si作为Si衬底，依次使用丙酮、无水乙醇和去离子水对p型Si进行超声清洗，去除Si表面油污等污渍，然后使用氮气干燥处理；然后将Si放置在氢氟酸中浸泡3分钟，去除硅表面自然氧化层；最后依次使用乙醇和去离子水对p型Si进行清洗，去除p型Si表面氢氟酸杂质，然后使用氮气干燥处理，得到处理干净的p型Si衬底。
(2)PbZr0.52Ti0.48O3铁电薄膜的生长：
采用磁控溅射方法在清洗干净的p型Si衬底上生长PbZr0.52Ti0.48O3铁电薄膜。生长步骤如下：
(a)将PbZr0.52Ti0.48O3靶材和清洗干净的Si衬底放置在磁控溅射生长室中，将生长室真空至抽10-4Pa以下；
(b)在真空环境下对Si衬底进行400℃退火处理；
(c)PbZr0.52Ti0.48O3靶材预溅射处理：
将Si衬底温度升高至500℃，缓慢通入Ar并调节生长室内压力至1Pa。对PbZr0.52Ti0.48O3靶材进行预溅射处理10分钟，溅射功率为50W。
(d)溅射生长PbZr0.52Ti0.48O3铁电薄膜：
PbZr0.52Ti0.48O3靶材预溅射处理结束后，缓慢通入O2至Ar/O2比为10:1，调节生长室压力为2Pa，溅射功率设置为150W，打开Si衬底表面处挡板开始溅射生长PbZr0.52Ti0.48O3铁电薄膜。PbZr0.52Ti0.48O3铁电薄膜的厚度为10～1000nm，禁带宽度为3.40～3.55eV。
(3)薄金属电极的沉积：
铁电薄膜制备完后，进行沉积薄金属电极，在沉积金属电极之前用酒精、去离子水对步骤(2)中得到的铁电薄膜进行清洗。然后使用光刻和刻蚀方法，将部分PbZr0.52Ti0.48O3铁电薄膜刻蚀，使得p型Si材料裸露出来。
最后利用金属掩模板掩膜，采用电子束蒸镀方法在p型Si和PbZr0.52Ti0.48O3铁电薄膜表面沉积Au电极，Au电极的沉积温度为室温，Au电极厚度在3nm以下时沉积速率为厚度大于3nm时沉积速率为/>
实施例2：
本发明所述硅基铁电异质结光电探测器的制备方法与实施例1基本相同，仅有如下区别：步骤(3)中，薄金属电极选用钛、镍、金、铂、银、钼和钴一种或多种金属。
实施例3：
本发明所述硅基铁电异质结光电探测器的制备方法与实施例1基本相同，仅有如下区别：步骤(2)中，采用磁控溅射方法，选用PbZr0.2Ti0.8O3靶材制备PbZr0.2Ti0.8O3铁电薄膜，其中生长温度为500℃，溅射功率为150W，生长压力为1.5Pa，Ar/O2比为10:1，PbZr0.2Ti0.8O3厚度为120nm，禁带宽度为3.92eV。
实施例4：
本发明所述硅基铁电异质结光电探测器的制备方法与实施例1基本相同，仅有如下区别：步骤(2)中，采用磁控溅射方法，选用PbZr0.4Ti0.6O3靶材制备PbZr0.4Ti0.6O3铁电薄膜，生长温度为450℃，溅射功率为100W，生长压力为3Pa，Ar/O2比为10:1，PbZr0.4Ti0.6O3厚度为150nm，禁带宽度为3.75eV。
综上所述，本发明所述硅基铁电异质结光电探测器能够实现紫外-可见-近红外宽光谱和波长可选择光探测的目的，其在300-900nm宽光谱、300-340nm紫外以及380-900nm可见光-近红外波长下均可进行可选择光探测。并且，所述硅基铁电异质结光电探测器在实际工作中无需结合带通滤光片，大幅简化了器件的尺寸和制造成本，对发展新型多功能光电子器件具有重要意义。
所述实施例为本发明的优选的实施方式，但本发明并不限于上述实施方式，在不背离本发明的实质内容的情况下，本领域技术人员能够做出的任何显而易见的改进、替换或变型均属于本发明的保护范围。
Claims (10)
1.一种硅基铁电异质结光电探测器，其特征在于，所述硅基铁电异质结光电探测器包括Si衬底和Si衬底表面上生长的PbZrxTi1-xO3铁电薄膜，所述Si衬底和PbZrxTi1-xO3铁电薄膜的表面沉积有薄金属电极；其中0<x<1。
2.根据权利要求1所述的硅基铁电异质结光电探测器，其特征在于，所述Si衬底为n或p型Si。
3.根据权利要求1所述的硅基铁电异质结光电探测器，其特征在于，所述PbZrxTi1-xO3铁电薄膜的厚度为10～1000nm。
4.根据权利要求1所述的硅基铁电异质结光电探测器，其特征在于，所述薄金属电极包括钛、金、钼、钨或银中的一种或多种。
5.根据权利要求1所述的硅基铁电异质结光电探测器，其特征在于，所述薄金属电极的沉积厚度为10～40nm；所述薄金属电极的形状为圆形或正方形，面积为0.01～0.15mm2。
6.权利要求1～5任一项所述硅基铁电异质结光电探测器的制备方法，其特征在于，具体包括：
在清洗干净的Si衬底表面生长PbZrxTi1-xO3铁电薄膜，然后将部分PbZrxTi1-xO3铁电薄膜刻蚀裸露出Si衬底，分别在Si衬底和PbZrxTi1-xO3铁电薄膜表面沉积薄金属电极，得到所述硅基铁电异质结光电探测器。
7.根据权利要求6所述硅基铁电异质结光电探测器的制备方法，其特征在于，在Si衬底表面上通过磁控溅射法生长PbZrxTi1-xO3铁电薄膜；
所述磁控溅射法生长PbZrxTi1-xO3铁电薄膜的步骤如下：
(1)将PbZrxTi1-xO3靶材和清洗干净的Si衬底放置在磁控溅射生长室中，并将生长室真空抽至10-4Pa以下；
(2)在上述真空环境下对Si衬底进行退火处理，退火温度为300～400℃，退火时间为10～30分钟；
(3)PbZrxTi1-xO3靶材预溅射处理：缓慢通入Ar并调节生长室压力，打开溅射电源，在低功率下溅射PbZrxTi1-xO3靶材，去除PbZrxTi1-xO3靶材表面的污渍；所述预溅射功率为20～100W，预溅射时间为10～30分钟；
(4)溅射生长PbZrxTi1-xO3铁电薄膜：PbZrxTi1-xO3靶材预溅射处理后关闭溅射电源，然后缓慢通入O2并调节生长室压力，打开溅射电源并设定功率值，打开Si衬底表面处挡板进行PbZrxTi1-xO3铁电薄膜的生长，生长结束后关闭Si衬底表面处挡板，关闭溅射电源，关闭衬底加热电源，衬底自然降至室温。
8.根据权利要求7所述硅基铁电异质结光电探测器的制备方法，其特征在于，PbZrxTi1- xO3铁电薄膜生长时，Si衬底温度为400～650℃，溅射功率为50～200W，Ar/O2比为10:1～5:1，生长室压力为0.1～5Pa，生长时间为30～300分钟。
9.根据权利要求6所述硅基铁电异质结光电探测器的制备方法，其特征在于，采用热蒸发法或电子束蒸镀法在Si衬底和PbZrxTi1-xO3铁电薄膜表面镀上薄金属电极；
所述薄金属电极的生长速度为金属电极的厚度为10～40nm。
10.权利要求1～5任一项所述硅基铁电异质结光电探测器在300-900nm宽光谱、300-340nm紫外或380-900nm可见光-近红外波长下可选择光探测中的应用。
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