CN116472672A - 开关模块 - Google Patents

开关模块 Download PDF

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Publication number
CN116472672A
CN116472672A CN202180075468.5A CN202180075468A CN116472672A CN 116472672 A CN116472672 A CN 116472672A CN 202180075468 A CN202180075468 A CN 202180075468A CN 116472672 A CN116472672 A CN 116472672A
Authority
CN
China
Prior art keywords
power supply
switch module
gan
circuit
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180075468.5A
Other languages
English (en)
Chinese (zh)
Inventor
国玉博史
吉田卓矢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyosan Electric Manufacturing Co Ltd
Original Assignee
Kyosan Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosan Electric Manufacturing Co Ltd filed Critical Kyosan Electric Manufacturing Co Ltd
Publication of CN116472672A publication Critical patent/CN116472672A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
    • H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
    • H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
    • H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Amplifiers (AREA)
CN202180075468.5A 2020-11-19 2021-06-22 开关模块 Pending CN116472672A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020192669A JP7779650B2 (ja) 2020-11-19 2020-11-19 スイッチングモジュール
JP2020-192669 2020-11-19
PCT/JP2021/023661 WO2022107375A1 (ja) 2020-11-19 2021-06-22 スイッチングモジュール

Publications (1)

Publication Number Publication Date
CN116472672A true CN116472672A (zh) 2023-07-21

Family

ID=81708676

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180075468.5A Pending CN116472672A (zh) 2020-11-19 2021-06-22 开关模块

Country Status (7)

Country Link
US (1) US12438540B2 (enExample)
EP (1) EP4250565A4 (enExample)
JP (2) JP7779650B2 (enExample)
KR (1) KR20230107270A (enExample)
CN (1) CN116472672A (enExample)
TW (1) TW202236801A (enExample)
WO (1) WO2022107375A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7668252B2 (ja) * 2022-09-08 2025-04-24 株式会社京三製作所 高周波電源装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006166506A (ja) * 2004-12-03 2006-06-22 Fuji Electric Systems Co Ltd 電力変換装置の制御装置および電力変換装置
US20100237227A1 (en) * 2009-03-23 2010-09-23 General Electric Company Optically gated mems switch
WO2011095212A2 (en) * 2010-02-03 2011-08-11 Abb Technology Ag Switching module for use in a device to limit and/or break the current of a power transmission or distribution line
US20130271187A1 (en) * 2011-01-14 2013-10-17 Masanori Hayashi Driver for semiconductor switch element
US20150234417A1 (en) * 2013-08-27 2015-08-20 Panasonic Intellectual Property Management Co., Ltd. Gate drive circuit
US20170288661A1 (en) * 2016-04-01 2017-10-05 Ixys Corporation Gate Driver That Drives With A Sequence Of Gate Resistances
JP2018037723A (ja) * 2016-08-29 2018-03-08 公立大学法人首都大学東京 ゲート駆動装置
CN109155627A (zh) * 2016-05-25 2019-01-04 宜普电源转换公司 增强型fet栅极驱动器集成电路

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JPS56157143A (en) 1980-05-08 1981-12-04 Nippon Telegr & Teleph Corp <Ntt> Optical communication device
JPH0499810U (enExample) * 1991-02-04 1992-08-28
US5878132A (en) 1995-06-15 1999-03-02 Murata Manufacturing Co., Ltd. High-frequency noise elimination for use in telephone systems
JPH0963850A (ja) * 1995-06-15 1997-03-07 Murata Mfg Co Ltd ノイズ除去装置
JPH09107069A (ja) 1995-10-12 1997-04-22 Hitachi Ltd 半導体パワーモジュール
JP3732616B2 (ja) * 1997-05-23 2006-01-05 株式会社東海理化電機製作所 電力送信回路
JP5492114B2 (ja) * 2011-02-09 2014-05-14 株式会社東芝 スイッチング素子駆動回路
JP2012195934A (ja) * 2011-03-02 2012-10-11 Hitachi Kokusai Electric Inc スイッチング回路およびスイッチング回路を用いた撮像装置
JP5498415B2 (ja) 2011-03-03 2014-05-21 株式会社東芝 スイッチング電源とその駆動方法
US20120241820A1 (en) * 2011-03-21 2012-09-27 International Rectifier Corporation III-Nitride Transistor with Passive Oscillation Prevention
JP6261476B2 (ja) * 2014-09-01 2018-01-17 三菱電機株式会社 電力変換装置および電力変換装置の出力電圧検出方法
JP6414642B2 (ja) * 2015-07-10 2018-10-31 株式会社村田製作所 送電装置およびワイヤレス給電システム
US10014781B2 (en) * 2016-08-02 2018-07-03 Abb Schweiz Ag Gate drive systems and methods using wide bandgap devices
JP2018064011A (ja) * 2016-10-12 2018-04-19 オムロン株式会社 変圧器およびそれを備えた電力変換器
JP6895832B2 (ja) * 2017-07-14 2021-06-30 マレリ株式会社 プレーナ型トランス及びｄｃｄｃコンバータ
CN111758158B (zh) 2018-02-23 2024-01-02 罗姆股份有限公司 半导体装置及功率模块
FR3084801B1 (fr) 2018-08-06 2020-08-28 Commissariat Energie Atomique Circuit de commande de bras d'onduleur
KR20200067325A (ko) 2018-12-04 2020-06-12 한국전기연구원 전력용 mosfet 게이트 구동회로
JP6772355B1 (ja) * 2019-10-15 2020-10-21 株式会社京三製作所 スイッチングモジュール

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006166506A (ja) * 2004-12-03 2006-06-22 Fuji Electric Systems Co Ltd 電力変換装置の制御装置および電力変換装置
US20100237227A1 (en) * 2009-03-23 2010-09-23 General Electric Company Optically gated mems switch
WO2011095212A2 (en) * 2010-02-03 2011-08-11 Abb Technology Ag Switching module for use in a device to limit and/or break the current of a power transmission or distribution line
US20130271187A1 (en) * 2011-01-14 2013-10-17 Masanori Hayashi Driver for semiconductor switch element
US20150234417A1 (en) * 2013-08-27 2015-08-20 Panasonic Intellectual Property Management Co., Ltd. Gate drive circuit
US20170288661A1 (en) * 2016-04-01 2017-10-05 Ixys Corporation Gate Driver That Drives With A Sequence Of Gate Resistances
CN109155627A (zh) * 2016-05-25 2019-01-04 宜普电源转换公司 增强型fet栅极驱动器集成电路
JP2018037723A (ja) * 2016-08-29 2018-03-08 公立大学法人首都大学東京 ゲート駆動装置

Also Published As

Publication number Publication date
EP4250565A4 (en) 2024-10-09
JP2022081242A (ja) 2022-05-31
US12438540B2 (en) 2025-10-07
US20230421152A1 (en) 2023-12-28
JP2024086864A (ja) 2024-06-28
KR20230107270A (ko) 2023-07-14
WO2022107375A1 (ja) 2022-05-27
EP4250565A1 (en) 2023-09-27
TW202236801A (zh) 2022-09-16
JP7779650B2 (ja) 2025-12-03

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