CN116472672A - 开关模块 - Google Patents
开关模块 Download PDFInfo
- Publication number
- CN116472672A CN116472672A CN202180075468.5A CN202180075468A CN116472672A CN 116472672 A CN116472672 A CN 116472672A CN 202180075468 A CN202180075468 A CN 202180075468A CN 116472672 A CN116472672 A CN 116472672A
- Authority
- CN
- China
- Prior art keywords
- power supply
- driving
- gan
- circuit
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000013307 optical fiber Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
- H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
- H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
- H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-192669 | 2020-11-19 | ||
| JP2020192669A JP2022081242A (ja) | 2020-11-19 | 2020-11-19 | スイッチングモジュール |
| PCT/JP2021/023661 WO2022107375A1 (ja) | 2020-11-19 | 2021-06-22 | スイッチングモジュール |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116472672A true CN116472672A (zh) | 2023-07-21 |
Family
ID=81708676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180075468.5A Pending CN116472672A (zh) | 2020-11-19 | 2021-06-22 | 开关模块 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230421152A1 (cambridge) |
| EP (1) | EP4250565A4 (cambridge) |
| JP (2) | JP2022081242A (cambridge) |
| KR (1) | KR20230107270A (cambridge) |
| CN (1) | CN116472672A (cambridge) |
| TW (1) | TW202236801A (cambridge) |
| WO (1) | WO2022107375A1 (cambridge) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7668252B2 (ja) * | 2022-09-08 | 2025-04-24 | 株式会社京三製作所 | 高周波電源装置 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0499810U (cambridge) * | 1991-02-04 | 1992-08-28 | ||
| JPH0963850A (ja) * | 1995-06-15 | 1997-03-07 | Murata Mfg Co Ltd | ノイズ除去装置 |
| JPH09107069A (ja) * | 1995-10-12 | 1997-04-22 | Hitachi Ltd | 半導体パワーモジュール |
| JP3732616B2 (ja) * | 1997-05-23 | 2006-01-05 | 株式会社東海理化電機製作所 | 電力送信回路 |
| JP2006166506A (ja) * | 2004-12-03 | 2006-06-22 | Fuji Electric Systems Co Ltd | 電力変換装置の制御装置および電力変換装置 |
| US8101898B2 (en) * | 2009-03-23 | 2012-01-24 | General Electric Company | Optically gated MEMS switch |
| EP2532081B1 (en) * | 2010-02-03 | 2014-04-09 | ABB Technology AG | Switching module to limit and/or break the current of an electric power line |
| EP2665169A1 (en) * | 2011-01-14 | 2013-11-20 | Panasonic Corporation | Apparatus for driving semiconductor switch element |
| JP5492114B2 (ja) * | 2011-02-09 | 2014-05-14 | 株式会社東芝 | スイッチング素子駆動回路 |
| WO2012118035A1 (ja) * | 2011-03-02 | 2012-09-07 | 株式会社日立国際電気 | スイッチング回路およびスイッチング回路を用いた撮像装置 |
| JP5498415B2 (ja) | 2011-03-03 | 2014-05-21 | 株式会社東芝 | スイッチング電源とその駆動方法 |
| WO2015029363A1 (ja) * | 2013-08-27 | 2015-03-05 | パナソニックＩｐマネジメント株式会社 | ゲート駆動回路 |
| JP6261476B2 (ja) * | 2014-09-01 | 2018-01-17 | 三菱電機株式会社 | 電力変換装置および電力変換装置の出力電圧検出方法 |
| JP6414642B2 (ja) * | 2015-07-10 | 2018-10-31 | 株式会社村田製作所 | 送電装置およびワイヤレス給電システム |
| US9813055B2 (en) * | 2016-04-01 | 2017-11-07 | Ixys Corporation | Gate driver that drives with a sequence of gate resistances |
| US10014781B2 (en) * | 2016-08-02 | 2018-07-03 | Abb Schweiz Ag | Gate drive systems and methods using wide bandgap devices |
| JP2018037723A (ja) * | 2016-08-29 | 2018-03-08 | 公立大学法人首都大学東京 | ゲート駆動装置 |
| JP2018064011A (ja) * | 2016-10-12 | 2018-04-19 | オムロン株式会社 | 変圧器およびそれを備えた電力変換器 |
| JP6895832B2 (ja) * | 2017-07-14 | 2021-06-30 | マレリ株式会社 | プレーナ型トランス及びｄｃｄｃコンバータ |
| WO2019163343A1 (ja) * | 2018-02-23 | 2019-08-29 | ローム株式会社 | 半導体装置及びパワーモジュール |
| FR3084801B1 (fr) * | 2018-08-06 | 2020-08-28 | Commissariat Energie Atomique | Circuit de commande de bras d'onduleur |
| JP6772355B1 (ja) * | 2019-10-15 | 2020-10-21 | 株式会社京三製作所 | スイッチングモジュール |
-
2020
- 2020-11-19 JP JP2020192669A patent/JP2022081242A/ja active Pending
-
2021
- 2021-06-22 US US18/034,762 patent/US20230421152A1/en active Pending
- 2021-06-22 CN CN202180075468.5A patent/CN116472672A/zh active Pending
- 2021-06-22 WO PCT/JP2021/023661 patent/WO2022107375A1/ja active Application Filing
- 2021-06-22 EP EP21894252.2A patent/EP4250565A4/en active Pending
- 2021-06-22 KR KR1020237018431A patent/KR20230107270A/ko active Pending
- 2021-11-18 TW TW110142868A patent/TW202236801A/zh unknown
-
2024
- 2024-04-11 JP JP2024063751A patent/JP2024086864A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022107375A1 (ja) | 2022-05-27 |
| KR20230107270A (ko) | 2023-07-14 |
| EP4250565A1 (en) | 2023-09-27 |
| JP2024086864A (ja) | 2024-06-28 |
| EP4250565A4 (en) | 2024-10-09 |
| TW202236801A (zh) | 2022-09-16 |
| JP2022081242A (ja) | 2022-05-31 |
| US20230421152A1 (en) | 2023-12-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |