CN116364695B - Power module and electronic equipment thereof - Google Patents
Power module and electronic equipment thereof Download PDFInfo
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- CN116364695B CN116364695B CN202310073018.3A CN202310073018A CN116364695B CN 116364695 B CN116364695 B CN 116364695B CN 202310073018 A CN202310073018 A CN 202310073018A CN 116364695 B CN116364695 B CN 116364695B
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- 239000000758 substrate Substances 0.000 claims abstract description 43
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a power module and an electronic device thereof, comprising: the substrate includes an insulating layer and a first conductive layer. The insulating layer comprises a first insulating section and a second insulating section which are connected with each other, the second insulating section is arranged adjacent to the control pin, the thickness of the second insulating section is larger than that of the first insulating section, the plurality of power chips are distributed on the first conductive layer at intervals, the frame comprises a frame body, the control pin and the power pin, the driving chip is arranged on the frame body, when the power chip is arranged on the first conductive section, the driving chip is electrically connected with the second conductive section through a first lead wire, and the power chip is electrically connected with the second conductive section through a second lead wire; or when the power chip is arranged on the second conductive section, the driving chip and the power chip are electrically connected through a third lead. According to the power module provided by the invention, the thickness of the substrate is integrally increased, the vertical distance between the frame body and the first conductive layer is reduced, and the problem that the lead cannot be bonded with the power chip and the driving chip is solved.
Description
Technical Field
The present invention relates to the field of electronic manufacturing technologies, and in particular, to a power module and an electronic device thereof.
Background
The power module IPM (Intelligent Power Module) integrates the driving circuit and the power semiconductor device in one package, and compared with IGBT (Insulated Gate Bipolar Transistor), the power module has the advantages of further reduced volume and weight, continuously improved integration level and stability, and wide application in the fields of motor driving and various switching power supplies.
In a conventional production flow of the power module, after the chip is mounted, part of a bonding pad of the IC chip at the control side is bonded with a grid electrode or an emitter electrode of an IGBT (insulated gate bipolar transistor) chip on the circuit board through a gold wire in a pull-down mode. In the related art, there is a limit in the vertical distance between the pad of the IC chip on the control side and the gate or emitter of the IGBT chip. However, with the requirement of high power and based on the considerations of product strength, insulation, heat dissipation, etc., the size (including thickness) of the power module gradually increases, so that the vertical distance between the pad of the IC chip and the gate or emitter of the IGBT chip exceeds the vertical operation capability of the gold wire bonding device, the alloy wire cannot be bonded, and the number of times of switching wire diameter or device is increased due to the larger number of types of leads used in the power module, which affects the production efficiency of the power module.
In addition, when the sinking depth of the welding spot of the IC chip to the electrode bonding of the IGBT chip is too large, the end stress of the gold wire is increased, and the risk of gold wire disconnection or short circuit is generated.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present invention is to provide a power module, which solves the problem that the lead wire cannot be bonded with the power chip and the driving chip after the size of the power module is increased, improves the production efficiency, and reduces the risk of wire breakage or short circuit.
Another object of the present invention is to provide an electronic device employing the above power module.
According to an embodiment of the first aspect of the present invention, a power module includes: a plastic package body; the plastic package comprises a substrate, wherein the substrate is arranged on the plastic package body, the substrate comprises an insulating layer and a first conductive layer, the first conductive layer is arranged on one side of the insulating layer in the thickness direction, the insulating layer comprises a first insulating section and a second insulating section which are connected with each other, the second insulating section is positioned on one side of the first insulating section, which is adjacent to the control pin, the thickness of the second insulating section is larger than that of the first insulating section, the first conductive layer comprises a first conductive section and a second conductive section, the first conductive section is arranged on the first insulating section, and the second conductive section is arranged on the second insulating section; the power chips are arranged on the first conductive layer at intervals along the length direction of the first conductive layer; the frame comprises a frame body, a plurality of control pins and a plurality of power pins, wherein the frame body is arranged in the plastic package body, the frame body is arranged on one side of the substrate where the power chip is located and is spaced apart from the substrate, the plurality of control pins are arranged on one side of the plastic package body in the width direction, one end of each control pin is connected with the frame body, the other end of each control pin extends out of the plastic package body, the plurality of power pins are arranged on the other side of the plastic package body in the width direction, one end of each power pin is electrically connected with the power chip, and the other end of each power pin extends out of the plastic package body; the driving chip is arranged on the frame body and is electrically connected with the control pin, wherein when the power chip is arranged on the first conductive section, the driving chip is electrically connected with the second conductive section through a first lead wire, the power chip is electrically connected with the second conductive section through a second lead wire, and the driving chip and the power chip are electrically connected through the first lead wire, the second conductive section and the second lead wire; or when the power chip is arranged on the second conductive section, the driving chip and the power chip are electrically connected through a fourth lead.
According to the power module of the embodiment of the invention, the thickness of the second insulation section is larger than that of the first insulation section. From this, compare with traditional power module, can increase the thickness of base plate to can reduce the perpendicular distance between frame body and the second electrically conductive section, solve after power module's size increases the unable problem of bonding with power chip and driving chip of lead wire, and can avoid the tip stress increase of lead wire, thereby can prevent lead wire fracture or short circuit, promoted production efficiency.
According to some embodiments of the invention, when the power chip is disposed on the first conductive segment, the driving chip is electrically connected to the frame body through a fourth lead, the frame body is electrically connected to the second conductive segment through a fifth lead, and the driving chip and the power chip are electrically connected through the fourth lead, the frame body, the fifth lead, the second conductive segment and the second lead; or when the power chip is arranged on the second conductive section, the driving chip is electrically connected with the frame body through a sixth lead, the frame body is electrically connected with the power chip through a seventh lead, and the driving chip and the power chip are electrically connected through the sixth lead, the frame body and the seventh lead.
According to some embodiments of the invention, when the power chip is disposed on the first conductive segment, the first lead and the second lead are made of the same material, or the fourth lead, the fifth lead and the second lead are made of the same material; or when the power chip is arranged on the second conductive section, the materials of the sixth lead and the seventh lead are the same.
According to some embodiments of the invention, when the power chip is disposed on the first conductive segment, the first lead and the second lead are gold wires, or the fourth lead and the fifth lead and the second lead are gold wires; or when the power chip is arranged on the second conductive section, the sixth lead and the seventh lead are gold wires.
According to some embodiments of the invention, a height difference between a side surface of the first conductive layer remote from the insulating layer and a side surface of the frame body remote from the substrate is Δh 1, wherein the Δh 1 satisfies: delta h 1 is more than or equal to 0mm and less than 2.3mm.
According to some embodiments of the invention, the first conductive layer has a thickness D 1, the second conductive layer has a thickness D 2, and the second insulating segment has a thickness D 3, wherein the D 1、D2 and D 3 satisfy: d 1＞0.5mm,D2＞0.5mm,D3 > 1.2mm.
According to some embodiments of the invention, a free end of the second insulating section protrudes from a side surface of the power chip remote from the first conductive layer, and the frame body is located above the second insulating section.
According to some embodiments of the invention, the first conductive segments and the second conductive segments are each plural, the plural first conductive segments are arranged at intervals along the length direction of the first insulating segment, and the plural second conductive segments are arranged at intervals along the length direction of the second insulating segment.
According to some embodiments of the invention, a height difference between a side surface of the second conductive segment remote from the second insulating segment and a side surface of the power chip remote from the first conductive layer is Δh 2, wherein the Δh 2 satisfies: delta h 2 is more than or equal to 0mm and less than 2.3mm; and/or a height difference between a side surface of the second conductive segment, which is far away from the second insulating segment, and a side surface of the driving chip, which is far away from the frame body, is Δh 3, wherein the Δh 3 satisfies: delta h 3 is more than or equal to 0mm and less than 2.3mm.
According to some embodiments of the invention, the Δh 2 and Δh 3 further satisfy: Δh 2≤△h3.
According to some embodiments of the invention, when the power chip is disposed on the second conductive segment, the second insulating segment includes a first sub-insulating segment and a second sub-insulating segment connected to each other, the first sub-insulating segment is connected to one side of the first insulating segment in the width direction, and one side surface of the second sub-insulating segment in the width direction is flush with the other side surface of the first insulating segment in the width direction.
According to some embodiments of the invention, the insulating layer is exposed outside the plastic package, and a surface of a side of the insulating layer away from the first conductive layer is flush with a surface of a side of the plastic package in a thickness direction.
According to some embodiments of the invention, the substrate further comprises a second conductive layer, the second conductive layer is arranged on the other side of the thickness direction of the insulating layer, the second conductive layer is exposed out of the plastic package body, and one side surface of the second conductive layer, which is far away from the insulating layer, is flush with one side surface of the plastic package body in the thickness direction.
According to some embodiments of the invention, the first conductive layer and the second conductive layer are both copper layers and the insulating layer is a ceramic layer.
An electronic device according to an embodiment of the second aspect of the present invention comprises a power module according to an embodiment of the first aspect of the present invention.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
fig. 1 is a schematic view of a substrate of a power module according to an embodiment of the invention;
fig. 2 is a front view of a substrate of a power module according to an embodiment of the present invention;
fig. 3 is a rear view of a substrate of a power module according to an embodiment of the present invention;
Fig. 4 is a left side view of a substrate of a power module according to an embodiment of the present invention;
fig. 5 is a perspective view of a power module according to an embodiment of the present invention;
fig. 6 is a schematic view of a substrate of a power module according to another embodiment of the invention;
fig. 7 is a side view of a substrate of a power module according to another embodiment of the invention;
fig. 8 is a schematic diagram of a power module according to an embodiment of the invention, wherein the plastic package is not shown;
Fig. 9 is a schematic diagram of a power module according to another embodiment of the invention, wherein the plastic package is not shown.
Reference numerals:
100: a power module;
1: a plastic package body; 2: a substrate; 21: an insulating layer; 211: a first insulating section; 212: a second insulating section; 213: a first sub-insulation section; 214: a second sub-insulation section; 22: a first conductive layer; 221: a first conductive segment; 222: a second conductive segment; 23: a second conductive layer; 3: a power chip; 31: an IGBT chip; 32: a freewheeling diode; 4: a frame; 41: a frame body; 42: a control pin; 43: a power pin; 5: a driving chip; 7: a third lead; 8: a sixth lead; 9: a seventh lead; 10: an eighth lead; 11: a ninth lead; 12: a first lead; 13: a second lead; 14: a fourth lead; 15: and a fifth lead.
Detailed Description
A power module 100 according to an embodiment of the first aspect of the invention is described below with reference to fig. 1-9.
As shown in fig. 1 to 9, a power module 100 according to an embodiment of the first aspect of the present invention includes a plastic package 1, a substrate 2, a plurality of power chips 3, a frame 4, and at least one driving chip 5. In the description of the present invention, "plurality" means two or more.
Specifically, the substrate 2 is provided in the molding compound 1, and the substrate 2 includes an insulating layer 21 and a first conductive layer 22, and the first conductive layer 22 is provided on one side in the thickness direction of the insulating layer 21. The insulating layer 21 includes a first insulating section 211 and a second insulating section 212 connected to each other, the second insulating section 212 being located at a side of the first insulating section 211 adjacent to the control pin 42, the second insulating section 212 having a thickness greater than that of the first insulating section 211.
The plurality of power chips 3 are arranged at intervals along the length direction of the first conductive layer 22. The frame 4 includes a frame body 41, a plurality of control pins 42, and a plurality of power pins 43. The frame body 41 is arranged in the plastic package body 1, the frame body 41 is spaced apart from the substrate 2 on one side of the substrate 2 where the power chip 3 is located, a plurality of control pins 42 are arranged on one side of the plastic package body 1 in the width direction, one end of each control pin 42 is connected with the frame body 41, the other end of each control pin 42 extends out of the plastic package body 1, a plurality of power pins 43 are arranged on the other side of the plastic package body 1 in the width direction, one end of each power pin 42 is electrically connected with the power chip 3, and the other end of each power pin 43 extends out of the plastic package body 1. At least one driving chip 5 is disposed on the frame body 41, and the driving chip 5 is electrically connected to the control pins 42.
Referring to fig. 8, the number of power chips 3 may be six, the six power chips 3 are arranged at intervals along the length direction of the first conductive layer 22, the number of driving chips 5 is four, the four driving chips 5 are arranged on the frame body 41 at intervals, the power chips 3 are electrically connected with the corresponding power pins 43 through the eighth lead wires 10, and the driving chips 5 are electrically connected with the corresponding control pins 42 through the ninth lead wires 11. The number of the control pins 42 may be 21, the 21 control pins 42 are located at one side of the width direction of the plastic package body 1, the 21 control pins 42 are arranged at intervals along the length direction of the plastic package body 1, the number of the power pins 43 may be 8, the 8 power pins 43 are located at the other side of the width direction of the plastic package body 1, and the 8 power pins 43 are arranged at intervals along the length direction of the plastic package body 1.
When the power chip 3 is disposed on the first conductive segment 221, the driving chip 5 is electrically connected to the second conductive segment 222 through the first lead 12, the power chip 3 is electrically connected to the second conductive segment 222 through the second lead 13, and the driving chip 5 and the power chip 3 are electrically connected through the first lead 12, the second conductive segment 222 and the second lead 13 (as shown in fig. 9). Alternatively, when the power chip 3 is disposed on the second conductive segment 222, the driving chip 5 and the power chip 3 are electrically connected through the third lead 7 (as shown in fig. 8). So arranged, by designing the thickness of the second insulating section 212 to be greater than the thickness of the first insulating section 211, the vertical distance between the driving chip 5 and the conductive layer on the surface of the second insulating section 212, and the vertical distance between the power chip 3 and the conductive layer on the surface of the second insulating section 212 are all within the range of the vertical operation capability of the bonding apparatus, bonding of the leads (i.e., the above-mentioned first, second and third leads 12, 13 and 7) is facilitated, and an increase in the end stress of the leads can be avoided, so that breakage or short-circuiting of the leads can be prevented.
In addition, when the power chip 3 is disposed on the first conductive segment 221, since the thickness of the first insulating segment 211 is smaller than that of the second insulating segment 212, heat generated by the operation of the power chip 3 can be quickly transferred to the outside through the first conductive segment 221 and the first insulating segment 211, so that the heat dissipation effect of the power module 100 can be improved.
According to the power module 100 of the embodiment of the present invention, the thickness of the second insulation section 212 is made larger than the thickness of the first insulation section 211. Therefore, compared with the conventional power module 100, the thickness of the substrate 2 can be increased, so that the vertical distance between the frame body 41 and the second conductive section 222 can be reduced, the problem that the lead wire cannot be bonded with the power chip 3 and the driving chip 5 after the size of the power module 100 is increased is solved, and the increase of the end stress of the lead wire can be avoided, thereby preventing the lead wire from breaking or shorting and improving the production efficiency.
According to some embodiments of the present invention, as shown in fig. 9, when the power chip 3 is disposed at the first conductive segment 221, the driving chip 5 is electrically connected to the frame body 41 through the fourth lead 14, the frame body 41 is electrically connected to the second conductive segment 222 through the fifth lead 15, and the driving chip 5 and the power chip 3 are electrically connected through the fourth lead 14, the frame body 41, the fifth lead 15, the second conductive segment 222, and the second lead 13. Or as shown in fig. 8, when the power chip 3 is disposed on the second conductive segment 222, the driving chip 5 is electrically connected to the frame body 41 through the sixth lead 8, the frame body 41 is electrically connected to the power chip 3 through the seventh lead 9, and the driving chip 5 and the power chip 3 are electrically connected through the sixth lead 8, the frame body 41, and the seventh lead 9.
According to some embodiments of the present invention, when the power chip 3 is disposed on the first conductive segment 221, the first lead 12 and the second lead 13 are made of the same material, for example, the first lead 12 and the second lead 13 are gold wires. Or the fourth lead 14, the fifth lead 15 and the second lead 13 are made of the same material, for example, the fourth lead 14, the fifth lead 15 and the second lead 13 are gold wires.
When the power chip 3 is disposed on the second conductive segment 222, the sixth lead 8 and the seventh lead 9 are made of the same material. For example, the sixth wire 8 and the seventh wire 9 are gold wires. Among them, the eighth lead 10 and the ninth lead 11 may be aluminum wires.
Therefore, the power module 100 only adopts two different leads in the production process, so that the frequency of switching wires can be reduced in the production process, the production efficiency is improved, the bonding rate of gold wires is higher, and the bonding efficiency is improved.
According to some embodiments of the present invention, the height difference between the side surface of the first conductive layer 22 remote from the insulating layer 21 and the side surface of the frame body 41 remote from the substrate 2 is Δh 1, where Δh 1 satisfies: delta h 1 is more than or equal to 0mm and less than 2.3mm. When Δh 1 > 2.3mm, the vertical distance between the first conductive layer 22 and the frame body 41 is far, so that both ends of the lead cannot be bonded at the same time. Therefore, the height difference between the side surface of the first conductive layer 22 far away from the insulating layer 21 and the side surface of the frame body 41 far away from the substrate 2 is set within the range of 0mm delta h 1 < 2.3mm, so that the height distance between the side surface of the first conductive layer 22 far away from the insulating layer 21 and the side surface of the frame body 41 far away from the substrate 2 is designed more reasonably, and the bonding of leads is facilitated.
According to some embodiments of the present invention, the first conductive layer 22 has a thickness D 1, the second conductive layer 23 has a thickness D 2, and the second insulating segment 212 has a thickness D 3, wherein D 1、D2 and D 3 satisfy: d 1＞0.5mm,D2＞0.5mm,D3 > 1.2mm. When D 1≤0.5mm,D2 is less than or equal to 0.5mm and D 3 is less than or equal to 1.2mm, the thickness of the first conductive layer 22, the thickness of the second conductive layer 23 and the thickness of the second insulating section 212 are smaller, so that the thickness of the substrate 2 is smaller, the vertical distance between the first frame section provided with the driving chip 5 and the first conductive layer 22 is larger, and two ends of the lead wire cannot be bonded. From this, through satisfying D 1＞0.5mm,D2＞0.5mm,D3 > 1.2mm respectively with the thickness of first conducting layer 22, the thickness of second conducting layer 23 and the thickness of second insulating section 212, make the thickness design of first conducting layer 22, second conducting layer 23 and second insulating section 212 more reasonable, can increase the thickness of base plate 2, thereby reduce the perpendicular distance between driver chip 5 and the power chip 3, make the perpendicular distance between driver chip 5 and the power chip 3 can satisfy the perpendicular operational ability of bonding equipment, the bonding at the both ends of the lead wire of being convenient for realizes the electric connection of power chip 3 and driver chip 5.
In some alternative embodiments, as shown in fig. 4, the free end of the second insulating section 212 protrudes from a surface of the power chip 3 away from the first conductive layer 22, and the frame body 41 is located above the second insulating section 212. In other words, the surface of the power chip 3 on the side far from the first conductive layer 22 is lower than the surface of the second insulating section 212 far from the first conductive layer 22, so that no damage is caused to the power chip 3, while the frame body 41 is disposed above the end of the free end of the second insulating section 212, so that the vertical distance between the driving chip 5 and the conductive layer on the surface of the second insulating section 212, and the vertical distance between the power chip 3 and the conductive layer on the surface of the second insulating section 212 are all within a reasonable range.
According to some embodiments of the present invention, the first conductive segments 221 and the second conductive segments 222 are each plural, and the plural first conductive segments 221 are arranged at intervals along the length direction of the first insulating segment 211. The plurality of second conductive segments 222 are spaced apart along the length of the second insulating segment 212. As shown in fig. 1, four first conductive layers 22 are arranged at intervals along the length direction of the first insulating section 211, eight second conductive sections 222 are arranged at intervals along the length direction of the second insulating section 212, and the number of the second conductive sections 222 is equal to that of the power chips 3, so that the power chips 3 can be electrically connected with the driving chips 5 through the corresponding second conductive sections 222.
Further, the height difference between the side surface of the second conductive segment 222 away from the second insulating segment 212 and the side surface of the power chip 3 away from the first conductive layer 22 is Δh 2, where Δh 2 satisfies: delta h 2 is more than or equal to 0mm and less than 2.3mm; and/or the height difference between the side surface of the second conductive segment 222 remote from the second insulating segment 212 and the side surface of the driving chip 5 remote from the frame body 41 is Δh 3, wherein Δh 3 satisfies: delta h 3 is more than or equal to 0mm and less than 2.3mm. Wherein, Δh 2、△h3 can satisfy simultaneously: delta h 2＜2.3mm,0mm≤△h3 is more than or equal to 0mm and less than 2.3mm; or only Δh 2 satisfies: delta h 2 is more than or equal to 0mm and less than 2.3mm; still or only Δh 3 satisfies: delta h 3 is more than or equal to 0mm and less than 2.3mm.
Since the power chip 3 is electrically connected to the second conductive segment 222 through the second lead 13, when Δh 2 is greater than 2.3mm, the vertical distance between the power chip 3 and the second conductive segment 222 is greater, so that the two ends of the second lead cannot be bonded to the power chip 3 and the second conductive segment 222 at the same time. Therefore, by setting the height difference between the side surface of the second conductive segment 222 far away from the second insulating segment 212 and the side surface of the power chip 3 far away from the first conductive layer 22 within the range of 0mm < Deltah 2 < 2.3mm, the height distance between the side surface of the second conductive segment 222 far away from the second insulating segment 212 and the side surface of the power chip 3 far away from the first conductive layer 22 is designed more reasonably, the bonding between the two ends of the second lead 13 and the second conductive segment 222 and the power chip 3 is facilitated, and the length of the second lead 13 can be shortened.
Since the driving chip 5 is electrically connected to the second conductive segment 222 through the first lead 12, when Δh 3 is greater than 2.3mm, the vertical distance between the driving chip 5 and the second conductive segment 222 is greater, so that the two ends of the fourth lead 14 cannot be bonded to the driving chip 5 and the second conductive segment 222 at the same time. Therefore, by setting the height difference between the side surface of the second conductive segment 222 away from the second insulating segment 212 and the side surface of the driving chip 5 away from the frame body 41 within the range of 0mm Δh 3 < 2.3mm, the height distance between the side surface of the second conductive segment 222 away from the second insulating segment 212 and the side surface of the driving chip 5 away from the frame body 41 is designed more reasonably, so that the two ends of the fourth lead 14 are bonded with the second conductive segment 222 and the driving chip 5 respectively, and the length of the first lead 12 can be shortened.
Further, Δh 2 and Δh 3 further satisfy: Δh 2≤△h3. Thereby, the distance between the second conductive section 222 and the frame body 41 can be increased, and the heat generated by the operation of the power chip 3 can be reduced to be transferred to the driving chip 5, thereby reducing the thermal influence on the driving chip 5.
In some alternative embodiments, a side surface of the second insulating segment 212 remote from the second conductive layer 23 is flush with a side surface of the first conductive segment 221 remote from the first insulating segment 211. Thereby, the flatness between the side surface of the first conductive segment 221 away from the first insulating segment 211 and the second insulating segment 212 is increased, so that the structure of the substrate 2 is more regular.
In some alternative embodiments, when the power chip 3 is disposed on the second conductive section 222, the second insulating section 212 includes a first sub-insulating section 213 and a second sub-insulating section 214 connected to each other, the first sub-insulating section 213 is connected to one side of the first insulating section 211 in the width direction, and one side surface of the second sub-insulating section 214 in the width direction is flush with the other side surface of the first insulating section 211 in the width direction. As shown in fig. 4-7, the first sub-insulation section 213 and the first insulation section 211 are integrally formed, the second sub-insulation section 214 is disposed above the first sub-insulation section, and the thickness of the second insulation section 212 is increased, so that the insulation layer 21 is integrally thickened, and the thickness of the substrate 2 is increased, thereby reducing the vertical distance between the driving chip 5 and the first conductive layer 22, and solving the problem that the lead wire cannot be bonded with the power chip 3 and the driving chip 5 after the size of the power module 100 is increased. The second sub-insulation section 214 is flush with the surface of the first insulation section 211 at one side in the width direction, and the surface flatness of the second insulation section 212 and the first insulation section 211 is increased, so that the structure of the substrate 2 is more regular.
According to some embodiments of the present invention, the frame body 41 and the substrate 2 are arranged at intervals along the width direction of the molding body 1. That is, the frame body 41 and the substrate 2 are spaced apart in both the width direction of the molding body 1 and the thickness direction of the molding body 1. Thereby, the bonding of the wires is facilitated, and the heat transfer between the power chip 3 and the driving chip 5 can also be reduced.
In some alternative embodiments, the insulating layer 21 is exposed outside the plastic package body 1, and a surface of a side of the insulating layer 21 away from the first conductive layer 22 is flush with a surface of a side of the plastic package body 1 in a thickness direction. Thus, the heat generated by the power module 100 can be transferred to the outside through the insulating layer 21, so as to realize heat dissipation of the power module 100.
In other alternative embodiments, the substrate 2 further includes a second conductive layer 23, the second conductive layer 23 is disposed on the other side of the thickness direction of the insulating layer 21, the second conductive layer 23 is exposed outside the plastic package body 1, and a surface of one side of the second conductive layer 23, which is far away from the insulating layer 21, is flush with a surface of one side of the thickness direction of the plastic package body 1, where the first conductive layer 22 is used for mounting the power chip 3 and other electronic components, the second conductive layer 23 may be exposed outside the plastic package body 1, and heat generated by the operation of the power module 100 may be transferred to the outside through the second conductive layer 23, so as to implement heat dissipation of the power module 100. One side surface of the second conductive layer 23 in the thickness direction is flush with one side surface of the plastic package body 1 in the thickness direction, so that the one side surface of the plastic package body 1 in the thickness direction is a flat surface, and the power module 100 can be attached to a radiator, so that heat dissipation of the power module 100 can be performed quickly.
In some alternative embodiments, the first conductive layer 22 and the second conductive layer 23 are both copper layers, and the insulating layer 21 is a ceramic layer. Among them, the copper layer has good conductivity and excellent corrosion resistance, effectively improving the conductivity and the stability in use of the first conductive layer 22 and the second conductive layer 23. The ceramic layer has excellent properties such as high mechanical strength, good wear resistance and corrosion resistance, good thermal stability, etc., and the ceramic layer can prevent the insulation performance of the insulation layer 21 from being reduced and deformed after long-term use, and can prolong the service life of the substrate 2.
Alternatively, the wire diameter of the eighth wire 10 is larger than the wire diameter of the first wire 12, the second wire 13, the fourth wire 14 or the fifth wire 15, and the wire diameter of the eighth wire 10 is larger than the wire diameter of the third wire 7, the sixth wire 8 or the seventh wire 9. For example, the eighth lead 10 may be a thick aluminum wire to ensure connection reliability of the power chip 3 and the power pin 43.
In some alternative embodiments, each power chip 3 may include an IGBT chip 31 and a flywheel diode 32, the IGBT chip 31 may be disposed on the control side of the substrate 2, the flywheel diode 32 may be disposed on the power side of the substrate 2, the IGBT chip 31 is electrically connected to the flywheel diode 32 through a thick aluminum wire, the flywheel diode 32 is electrically connected to the corresponding power pin 43 through a thick aluminum wire, the IGBT chip 31 is electrically connected to the driving chip 5 through a gold wire to realize the electrical connection of the IGBT chip 31 and the driving chip 5, and the driving chip 5 is electrically connected to the control pin 42 through a gold wire.
In other alternative embodiments, the freewheeling diode 32 may be integrated on the IGBT chip 31 to form the power chip 3. The power chip 3 may also be a MOSFET chip.
An electronic device (not shown) according to an embodiment of the second aspect of the present invention comprises a power module 100 according to an embodiment of the first aspect of the present invention described above.
According to the electronic equipment provided by the embodiment of the invention, the power module 100 can be adopted to improve the production efficiency of the electronic equipment and improve the market competitiveness of the electronic equipment.
Other constructions and operations of electronic devices according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.
In the description of the present invention, it should be understood that the terms "length," "width," "thickness," "upper," "lower," "rear," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship based on that shown in the drawings, merely to facilitate description of the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (15)
1. A power module, comprising:
A plastic package body;
The plastic package comprises a substrate, wherein the substrate is arranged on the plastic package body, the substrate comprises an insulating layer and a first conductive layer, the first conductive layer is arranged on one side of the insulating layer in the thickness direction, the insulating layer comprises a first insulating section and a second insulating section which are connected with each other, the first conductive layer comprises a first conductive section and a second conductive section, the first conductive section is arranged on the first insulating section, the second conductive section is arranged on the second insulating section, and the sum of the thickness of the second insulating section and the thickness of the second conductive section is larger than the sum of the thickness of the first insulating section and the thickness of the first conductive section;
the power chips are arranged at intervals along the length direction of the first conductive layer;
The frame comprises a frame body, a plurality of control pins and a plurality of power pins, wherein the frame body is arranged in the plastic package body, the frame body is positioned at one side of the second conductive section far away from the second insulating section in the thickness direction of the substrate, the frame body is spaced apart from the substrate at one side of the substrate where the power chip is positioned, the plurality of control pins are positioned at one side of the plastic package body in the width direction, the second insulating section is positioned at one side of the first insulating section adjacent to the control pins, one end of each control pin is connected with the frame body, the other end of each control pin extends out of the plastic package body, the plurality of power pins are positioned at the other side of the plastic package body in the width direction, one end of each power pin is electrically connected with the power chip, and the other end of each power pin extends out of the plastic package body;
the at least one driving chip is arranged on the frame body and is electrically connected with the control pins;
When the power chip is arranged on the first conductive section, the driving chip is electrically connected with the second conductive section through a first lead wire, the power chip is electrically connected with the second conductive section through a second lead wire, and the driving chip and the power chip are electrically connected through the first lead wire, the second conductive section and the second lead wire; or (b)
When the power chip is arranged on the second conductive section, the driving chip and the power chip are electrically connected through a third lead.
2. The power module of claim 1, wherein the driver chip is electrically connected to the frame body through a fourth lead when the power chip is disposed in the first conductive segment, the frame body is electrically connected to the second conductive segment through a fifth lead, and the driver chip and the power chip are electrically connected through the fourth lead, the frame body, the fifth lead, the second conductive segment, and the second lead; or (b)
When the power chip is arranged on the second conductive section, the driving chip is electrically connected with the frame body through a sixth lead, the frame body is electrically connected with the power chip through a seventh lead, and the driving chip is electrically connected with the power chip through the sixth lead, the frame body and the seventh lead.
3. The power module of claim 2, wherein the first lead and the second lead are the same material or the fourth lead, the fifth lead and the second lead are the same material when the power chip is disposed in the first conductive segment; or (b)
When the power chip is arranged on the second conductive section, the sixth lead and the seventh lead are made of the same material.
4. The power module of claim 2, wherein when the power chip is disposed in the first conductive segment, the first lead and the second lead are gold wires, or the fourth lead and the fifth lead and the second lead are gold wires; or (b)
When the power chip is arranged on the second conductive section, the sixth lead and the seventh lead are gold wires.
5. The power module of claim 1, wherein a height difference between a side surface of the first conductive layer remote from the insulating layer and a side surface of the frame body remote from the substrate is Δh 1, wherein the Δh 1 satisfies: delta h 1 is more than or equal to 0mm and less than 2.3mm.
6. The power module of claim 1, wherein a side surface of the second insulating segment adjacent to the second conductive segment protrudes from a side surface of the power chip remote from the first conductive layer in a thickness direction of the insulating layer, and the frame body is located above the second insulating segment.
7. The power module of claim 1, wherein the power module comprises a power supply,
The first conductive segments and the second conductive segments are all multiple, the multiple first conductive segments are arranged at intervals along the length direction of the first insulating segment, and the multiple second conductive segments are arranged at intervals along the length direction of the second insulating segment.
8. The power module of claim 1, wherein a height difference between a side surface of the second conductive segment remote from the second insulating segment and a side surface of the power chip remote from the first conductive layer is Δh 2, wherein the Δh 2 satisfies: delta h 2 is more than or equal to 0mm and less than 2.3mm; and/or
The height difference between the side surface of the second conductive segment, which is far away from the second insulating segment, and the side surface of the driving chip, which is far away from the frame body, is Δh 3, wherein Δh 3 satisfies: delta h 3 is more than or equal to 0mm and less than 2.3mm.
9. The power module of claim 8, wherein Δh 2 and Δh 3 further satisfy: Δh 2≤△h3.
10. The power module according to claim 1, wherein the second insulating section includes a first sub-insulating section and a second sub-insulating section connected to each other when the power chip is provided in the second conductive section, the first sub-insulating section is connected to one side in a width direction of the first insulating section, and a surface of one side in the width direction of the second sub-insulating section is flush with a surface of the other side in the width direction of the first insulating section.
11. The power module according to any one of claims 1 to 10, wherein the insulating layer is exposed outside the plastic package, and a side surface of the insulating layer remote from the first conductive layer is flush with a side surface of the plastic package in a thickness direction.
12. The power module according to any one of claims 1 to 10, wherein the substrate further comprises a second conductive layer, the second conductive layer is disposed on the other side of the insulating layer in the thickness direction, the second conductive layer is exposed outside the plastic package, and a surface of the second conductive layer, which is far from the insulating layer, is flush with a surface of the plastic package in the thickness direction.
13. The power module of claim 12, wherein the first conductive layer has a thickness D 1, the second conductive layer has a thickness D 2, and the second insulating segment has a thickness D 3, wherein the D 1、D2 and D 3 each satisfy: d 1＞0.5mm,D2＞0.5mm,D3 > 1.2mm.
14. The power module of claim 12 wherein the first and second conductive layers are copper layers and the insulating layer is a ceramic layer.
15. An electronic device comprising a power module according to any of claims 1-14.
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| CN202310073018.3A CN116364695B (en) | 2023-01-31 | 2023-01-31 | Power module and electronic equipment thereof |
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| CN102339818A (en) * | 2010-07-15 | 2012-02-01 | 台达电子工业股份有限公司 | Power module |
| CN103916001A (en) * | 2012-12-30 | 2014-07-09 | 比亚迪股份有限公司 | Independent power factor correction device |
| CN104681546A (en) * | 2013-12-02 | 2015-06-03 | 三菱电机株式会社 | Power module and method for manufacturing the same |
| CN112968027A (en) * | 2021-03-29 | 2021-06-15 | 广东汇芯半导体有限公司 | Intelligent power module |
| CN115274592A (en) * | 2022-07-01 | 2022-11-01 | 深圳赛意法微电子有限公司 | Power module and power module manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2015220429A (en) * | 2014-05-21 | 2015-12-07 | ローム株式会社 | Semiconductor device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339818A (en) * | 2010-07-15 | 2012-02-01 | 台达电子工业股份有限公司 | Power module |
| CN103916001A (en) * | 2012-12-30 | 2014-07-09 | 比亚迪股份有限公司 | Independent power factor correction device |
| CN104681546A (en) * | 2013-12-02 | 2015-06-03 | 三菱电机株式会社 | Power module and method for manufacturing the same |
| CN112968027A (en) * | 2021-03-29 | 2021-06-15 | 广东汇芯半导体有限公司 | Intelligent power module |
| CN115274592A (en) * | 2022-07-01 | 2022-11-01 | 深圳赛意法微电子有限公司 | Power module and power module manufacturing method |
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