CN220510011U - Intelligent power module and electronic equipment with same - Google Patents

Abstract

The utility model discloses an intelligent power module and electronic equipment with the same, comprising: the substrate is provided with a conductive area, the substrate is provided with a central line, a first boundary line and a second boundary line which are arranged at intervals along a first direction, the first boundary line and the second boundary line are symmetrically arranged about the central line, and the distance between the first boundary line and the second boundary line is 1/3 of the size of the substrate in the first direction; the reverse conduction type power chip is arranged between the first boundary line and the second boundary line of the conductive area; the frame comprises a control side frame, a power side frame and a connecting rod, wherein the control side frame and the power side frame are respectively arranged on two opposite sides of the substrate in the first direction and are electrically connected with the reverse-conduction power chip, and the connecting rod is connected with the substrate and is staggered with the reverse-conduction power chip in the first direction. The intelligent power module provided by the embodiment of the utility model has the advantages of good heat dissipation performance and high electricity safety.

Description

Intelligent power module and electronic equipment with same

Technical Field

The utility model relates to the technical field of semiconductor devices, in particular to an intelligent power module and electronic equipment with the same.

Background

The intelligent power module in the related art generally comprises a substrate, a control side frame, a power side frame, a connecting rod, a power chip and a free-wheeling diode, wherein the connecting rod is used for pressing the substrate in the manufacturing process, plastic package material is prevented from overflowing on the surface of the substrate to generate substrate surface flash defects, the power chip is electrically connected with a driving chip of the control side frame, and the power chip is electrically connected with the power side frame through the free-wheeling diode, but the power chip and the free-wheeling diode are large in integral area, high in cost and thermal resistance, high in junction temperature fluctuation and the like.

Therefore, some intelligent power modules adopt reverse conduction type power chips which integrate the power chips and the flywheel diodes, so that the area of the chips can be reduced, the cost, the thermal resistance and the junction temperature fluctuation are reduced, but when a connecting rod is connected with a substrate, the reverse conduction type power chips can interfere with the connecting rod in position, and the heat dissipation and the electricity utilization safety are affected.

Disclosure of Invention

The present utility model aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present utility model is to provide an intelligent power module, which has good heat dissipation performance and high power consumption safety.

The utility model also provides electronic equipment with the intelligent power module

In order to achieve the above object, according to a first aspect of the present utility model, an embodiment provides an intelligent power module, including: a substrate provided with conductive regions, the substrate having a center line, a first boundary line, and a second boundary line arranged at intervals along a first direction, the first boundary line and the second boundary line being symmetrically arranged about the center line, a pitch of the first boundary line and the second boundary line being 1/3 of a size of the substrate in the first direction; the reverse conduction type power chip is arranged between the first boundary line and the second boundary line of the conductive area; the frame comprises a control side frame, a power side frame and a connecting rod, wherein the control side frame and the power side frame are respectively arranged on two opposite sides of the substrate in the first direction and are electrically connected with the reverse-conduction power chip, and the connecting rod is connected with the substrate and staggered with the reverse-conduction power chip in the first direction.

According to the intelligent power module provided by the embodiment of the first aspect of the utility model, the heat dissipation performance is good, and the electricity safety is high.

According to some embodiments of the utility model, the connecting rod is located on a side of the first borderline facing away from the second borderline; or the connecting rod is positioned on one side of the second boundary line, which is opposite to the first boundary line.

According to some embodiments of the utility model, the connecting rod is located between the reverse-conduction power chip and the control side frame, and a side of the connecting rod facing the control side frame is flush with a side of the conductive region facing the control side frame; and/or the connecting rod is positioned between the reverse conduction type power chip and the power side frame, and one side of the connecting rod facing the power side frame is level with one side of the conductive area facing the power side frame.

According to some embodiments of the present utility model, the substrate is further provided with jumper areas, the jumper areas are arranged at intervals with the conductive areas, and the jumper areas are electrically connected with the reverse-conduction power chip and the control side frame respectively; the connecting rod and the jumper area are positioned on the same side of the reverse conduction type power chip in the first direction.

According to some embodiments of the present utility model, the plurality of reverse-conduction power chips are arranged at intervals along a second direction perpendicular to the first direction, the substrate is provided with a plurality of conductive areas and a plurality of jumper areas, each conductive area is provided with at least one reverse-conduction power chip, and the plurality of reverse-conduction power chips are connected with the plurality of jumper areas in a one-to-one correspondence; the connecting rod is connected to two opposite sides of the base plate in the second direction.

According to some embodiments of the utility model, the plurality of reverse conducting power chips includes a low voltage reverse conducting power chip and a high voltage reverse conducting power chip; the plurality of conductive areas comprise a low-voltage conductive area and a high-voltage conductive area, the low-voltage reverse-conduction type power chip is arranged in the low-voltage conductive area, and the high-voltage reverse-conduction type power chip is arranged in the high-voltage conductive area; the plurality of jumper areas includes a low voltage jumper area and a high voltage jumper area.

According to some embodiments of the utility model, the low voltage jumper region is located between the low voltage conductive region and the control side frame; one end of the low-voltage jumper area is close to the driving chip of the control side frame, and the other end of the low-voltage jumper area is close to the low-voltage reverse-conduction power chip; wherein the other end of the low voltage jumper region is spaced from the link in the second direction.

According to some embodiments of the utility model, the high voltage jumper region is located between the high voltage conductive region and the control side frame; each of the high voltage jumper regions comprises: the emitter jumper area and the gate jumper area extend along the first direction and are distributed at intervals along the second direction, one end of the emitter jumper area and one end of the gate jumper area are respectively electrically connected with the control side frame, the other end of the emitter jumper area is electrically connected with an emitter of the high-voltage reverse-conduction power chip, and the other end of the gate jumper area is electrically connected with a gate of the high-voltage reverse-conduction power chip.

According to some embodiments of the utility model, the high-voltage reverse-conduction power chips are multiple, the high-voltage conductive area is one and the high-voltage reverse-conduction power chips are all installed in the high-voltage conductive area.

According to some embodiments of the utility model, the low voltage jumper region is located between the conductive region and the low voltage power side frame; and a notch is arranged in the low-voltage conducting area closest to the connecting rod, and the low-voltage jumper area is positioned in the notch.

According to some embodiments of the present utility model, the low-voltage reverse-conduction power chips are plural, the low-voltage conductive areas are plural, and the plural low-voltage reverse-conduction power chips are mounted in the plural low-voltage conductive areas in a one-to-one correspondence manner; and each low-voltage conductive area is provided with a notch, each notch is internally provided with a low-voltage jumper area, and the low-voltage reverse-conduction power chip is electrically connected with the low-voltage jumper area of the low-voltage conductive area.

According to some embodiments of the utility model, the high voltage jumper region is located between the high voltage conductive region and the power side frame; the high-voltage reverse-conduction type power chips are multiple, the number of the high-voltage conductive areas is one, and the multiple high-voltage reverse-conduction type power chips are all arranged in the high-voltage conductive areas; the high-voltage conductive areas are provided with a plurality of gaps, the gaps are distributed at intervals along the second direction, the high-voltage jumper areas are arranged in the gaps, the number of the gaps is the same as that of the high-voltage reverse-conduction power chips, and each high-voltage reverse-conduction power chip is electrically connected with the corresponding high-voltage jumper area.

According to some embodiments of the present utility model, the number of the low-voltage reverse-conduction power chips is three, the number of the low-voltage conductive areas is three, and the three low-voltage reverse-conduction power chips are correspondingly arranged in the three low-voltage conductive areas one by one; the number of the high-voltage reverse-conduction type power chips is three, the number of the high-voltage conductive areas is one, and the three high-voltage reverse-conduction type power chips are all arranged in the high-voltage conductive areas.

According to some embodiments of the utility model, the smart power module further comprises: the substrate, the frame and the reverse conducting power chip are packaged in the plastic package body, one surface of the substrate, which is opposite to the reverse conducting power chip, is flush with the surface of the plastic package body and is exposed out of the plastic package body, the control side frame is provided with a control side pin, the power side frame is provided with a power side pin, and the control side pin and the power side pin extend out of the plastic package body; the control side pins are connected with a circuit board, the driving chip is mounted on the circuit board, and the driving chip is packaged in the plastic package body; or the control side pin is connected with an integrally formed base island, the driving chip is mounted on the base island, and the driving chip is packaged in the plastic package body.

According to some embodiments of the utility model, the power side frame is connected to the substrate; the substrate comprises a conducting layer, an insulating layer and a radiating layer, wherein the conducting layer and the radiating layer are respectively arranged on the surfaces of two sides of the insulating layer, the jumper area and the conducting area are arranged on the conducting layer, the connecting rod is connected to the conducting layer, the radiating layer is exposed from the plastic package body, or the substrate comprises the conducting layer and the insulating radiating layer, the jumper area and the conducting area are arranged on the conducting layer, the insulating radiating layer is arranged on one surface of the conducting layer, which is opposite to the reverse-conduction power chip, the connecting rod is connected to the conducting layer, and the insulating radiating layer is exposed from the plastic package body.

According to a second aspect of the utility model, an embodiment proposes an electronic device comprising an intelligent power module according to an embodiment of the first aspect of the utility model.

According to the electronic equipment of the second aspect of the embodiment of the utility model, the intelligent power module of the first aspect of the embodiment of the utility model has the advantages of good heat dissipation performance, high electricity safety and the like.

Additional aspects and advantages of the utility model will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the utility model.

Drawings

The foregoing and/or additional aspects and advantages of the utility model will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:

fig. 1 is a cross-sectional view of a smart power module according to an embodiment of the present utility model.

Fig. 2 is a schematic diagram of connection of a substrate, a reverse-conducting power chip and a link of an intelligent power module according to an embodiment of the present utility model.

Fig. 3 is a schematic structural diagram of an intelligent power module according to an embodiment of the present utility model.

Fig. 4 is a schematic structural diagram of an intelligent power module according to another embodiment of the present utility model.

Fig. 5 is a schematic structural diagram of a smart power module according to still another embodiment of the present utility model.

Fig. 6 is a schematic structural diagram of a smart power module according to still another embodiment of the present utility model.

Reference numerals:

1. an intelligent power module;

100. a substrate;

110. a conductive region; 111. a low voltage conductive region; 112. a first notch; 113. a high voltage conductive region; 114. a second notch;

120. a jumper region; 121. a low voltage jumper region; 122. a transverse section; 123. a vertical section; 124. a high voltage jumper region; 125. an emitter jumper region; 126. a gate jumper region;

130. a conductive layer; 140. an insulating layer; 150. a heat dissipation layer; 160. an insulating heat dissipation layer;

200. A frame; 210. a control side frame; 211. a driving chip; 212. a control side pin; 220. a power side frame; 221. a power side pin; 230. a connecting rod;

300. a reverse-conducting power chip; 310. a low voltage reverse conducting power chip; 320. a high voltage reverse conducting power chip;

400. a plastic package body; 500. a circuit board; 600. and a conductive member.

Detailed Description

Embodiments of the present utility model will be described in detail below, by way of example with reference to the accompanying drawings.

In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present utility model.

In the description of the present utility model, "plurality" means two or more.

The following describes an intelligent power module 1 according to an embodiment of the present utility model with reference to the accompanying drawings.

As shown in fig. 1 to 6, the smart power module 1 according to an embodiment of the present utility model includes a substrate 100, a reverse-conducting power chip 300, and a frame 200.

The substrate 100 is provided with conductive regions 110, and the substrate 100 has a first boundary line L1, a second boundary line L2, and a center line X arranged at intervals along the first direction, the first boundary line L1 and the second boundary line L2 being symmetrically arranged about the center line X, and a pitch between the first boundary line L1 and the second boundary line L2 being 1/3 of a dimension of the substrate 100 in the first direction. The reverse conducting power chip 300 is disposed between the first boundary line L1 and the second boundary line L2 of the conductive region 110, the frame 200 includes a control side frame 210, a power side frame 220, and a link 230, the control side frame 210 and the power side frame 220 are disposed on opposite sides of the substrate 100 in the first direction and are electrically connected to the reverse conducting power chip 300, and the link 230 is connected to the substrate 100 and is offset from the reverse conducting power chip 300 in the first direction.

The first direction may be a length direction of the intelligent power module 1, and a direction indicated by an arrow a in the drawing is the first direction.

It should be noted that, the distance from the center line X to opposite sides of the first direction of the substrate 100 is the same, the first boundary line L1 may be located between the center line X and the control side frame 210, the second boundary line L2 may be located between the center line X and the power side frame 220, and the inverse power chip 300 is located between the first boundary line L1 and the second boundary line L2 in the first direction of the substrate 100, assuming that the dimension of the substrate 100 in the first direction is D1, that is, the width of the substrate 100 is D1, the distance between the first boundary line L1 and the center line X is D2, and the distance between the second boundary line L2 and the center line X is D2, where D2 is 1/6 of D1. That is, the reverse-conduction power chip 300 is located in the central region of the substrate 100 in the first direction of the substrate 100.

Thus, the heat of the reverse conducting power chip 300 can be uniformly diffused to the periphery and exchange heat with the substrate 100, the heat dissipation effect of the reverse conducting power chip 300 is better, the heat accumulation is not easy to occur, and the working performance of the intelligent power module 1 is improved.

The intelligent power module 1 according to the embodiment of the utility model has the advantages of small chip area and thermal resistance, low cost, low junction temperature fluctuation and the like by adopting the reverse-conduction type power chip 300 integrated with the power chip (Insulated Gate Bipolar Transistor, IGBT) and the flywheel diode (FRD).

In addition, the control side frame 210 and the power side frame 220 are disposed at opposite sides of the substrate 100 in the first direction and are electrically connected to the reverse-conduction type power chip 300, wherein the reverse-conduction type power chip 300 may be electrically connected to at least one of the power side frame 220 and the control side frame 210 through a conductive member 600, and the conductive member 600 may be a wire or a copper bond.

Further, since the link 230 is connected to the substrate 100 and is offset from the reverse-conduction power chip 300 in the first direction, the reverse-conduction power chip 300 interferes with the link 230, so that the link 230 and the reverse-conduction power chip 300 are not mutually interfered with each other, the size of the substrate 100 can be reduced, and occurrence of the situation that the reverse-conduction power chip 300 is crushed, deformed, broken or short-circuited can be avoided, and the electrical safety can be improved.

Thus, the intelligent power module 1 according to the embodiment of the utility model has good heat dissipation performance and high electricity safety.

According to some embodiments of the present utility model, as shown in fig. 1 and 2, the link 230 is located on a side of the first boundary line L1 facing away from the second boundary line L2, or the link 230 is located on a side of the second boundary line L2 facing away from the first boundary line L1. In this way, the connecting rod 230 does not occupy the installation space of the reverse conducting power chip 300, and the position adjustability of the reverse conducting power chip 300 on the conductive area 110 is higher.

According to some embodiments of the present utility model, as shown in fig. 1 and 2, the link 230 is located between the reverse-conduction power chip 300 and the control side frame 210, and a side of the link 230 facing the control side frame 210 is flush with a side of the conductive region 110 facing the control side frame 210. In this way, the overall size of the occupied space of the connecting rod 230 and the conductive area 110 in the first direction is not larger than the size of the conductive area 110 in the first direction, which is favorable for reducing the size of the intelligent power module 1 in the first direction, and realizing miniaturization of the intelligent power module 1.

According to some embodiments of the present utility model, as shown in fig. 1 and 2, the link 230 is located between the reverse-conduction power chip 300 and the power side frame 220, and a side of the link 230 facing the power side frame 220 is flush with a side of the conductive region 110 facing the power side frame 220. In this way, the overall size of the occupied space of the connecting rod 230 and the conductive area 110 in the first direction is not larger than the size of the conductive area 110 in the first direction, which is favorable for reducing the size of the intelligent power module 1 in the first direction, and realizing miniaturization of the intelligent power module 1.

According to some embodiments of the present utility model, as shown in fig. 1 and 2, the substrate 100 is further provided with a jumper region 120, the jumper region 120 is spaced from the conductive region 110, and the jumper region 120 is electrically connected to the reverse-conducting power chip 300 and the control side frame 210, respectively, wherein the connecting rod 230 and the jumper region 120 are located on the same side of the reverse-conducting power chip 300 in the first direction.

That is, the reverse-conductive power chip 300 may be electrically connected between the conductive member 600 and the jumper region 120 after being assembled in place, and the driving chip 211 of the control side frame 210 may be electrically connected with the jumper region 120 through the conductive member 600. In this way, since the conductive member 600 only needs to extend to the jumper region 120 and not to the link 230, the conductive member 600 connecting the control side frame 210 and the jumper region 120 does not interfere with the link 230.

According to some embodiments of the present utility model, as shown in fig. 1 and 2, the reverse-conduction power chips 300 are plural and arranged at intervals along a second direction perpendicular to the first direction, the substrate 100 is provided with plural conductive areas 110 and plural jumper areas 120, each conductive area 110 is provided with at least one reverse-conduction power chip 300, the plural reverse-conduction power chips 300 are connected to the plural jumper areas 120 in a one-to-one correspondence, and the connecting rods 230 are connected to opposite sides of the substrate 100 in the second direction.

The second direction may be a width direction of the intelligent power module 1. In addition, the direction indicated by the arrow B in the drawing is the second direction.

In this way, the link 230 may be connected to opposite sides of the substrate 100 in the second direction so that the substrate 100 and the frame 200 may be fixed together without the link 230 being positionally interfered with the control side frame 210 or the power side frame 220. In addition, the plurality of reverse conducting power chips 300 are connected with the plurality of jumper areas 120 in a one-to-one correspondence manner, so that each reverse conducting power chip 300 can be connected with the driving chip 211 through one jumper area 120, and each reverse conducting power chip 300 can be reliably connected with the driving chip 211.

In some embodiments of the present utility model, as shown in fig. 1 and 2, the plurality of reverse-conducting power chips 300 includes a low-voltage reverse-conducting power chip 310 and a high-voltage reverse-conducting power chip 320.

The plurality of conductive areas 110 includes a low voltage conductive area 111 and a high voltage conductive area 113, a low voltage reverse conductive power chip 310 is mounted on the low voltage conductive area 111, a high voltage reverse conductive power chip 320 is mounted on the high voltage conductive area 113, and the plurality of jumper areas 120 includes a low voltage jumper area 121 and a high voltage jumper area 124.

The low-voltage reverse conducting power chip 310 and the high-voltage reverse conducting power chip 320 can be arranged along the length direction of the intelligent power module 1, so that the space utilization rate of the intelligent power module 1 can be improved, the volume of the intelligent power module 1 is reduced, the low-voltage jumper area 121 is connected with the low-voltage reverse conducting power chip 310, the high-voltage jumper area 124 is connected with the high-voltage reverse conducting power chip 320, and the intelligent power module 1 can achieve normal functions, for example, the intelligent power module 1 can convert between alternating current and direct current.

In some embodiments of the present utility model, as shown in fig. 1 and 2, a low voltage jumper region 121 is located between the low voltage conductive region 111 and the control side frame 210, one end of the low voltage jumper region 121 is close to the driving chip 211 of the control side frame 210, and the other end of the low voltage jumper region 121 is close to the low voltage reverse conductive power chip 310. Wherein the other end of the low voltage jumper region 121 is spaced apart from the link 230 in the second direction.

Thus, the other end of the low voltage jumper area 121 may be closer to the low voltage reverse conducting power chip 310 in the first direction, and the other end of the low voltage jumper area 121 may be kept at a certain interval with the connecting rod 230 in the second direction, when the other end of the low voltage jumper area 121 and the low voltage reverse conducting power chip 310 are connected through the conductive member 600, the conductive member 600 is not easy to interfere with the connecting rod 230 in position, so that the damage of the conductive member 600 is more effectively avoided, the short circuit or the open circuit of the intelligent power module 1 is avoided, and the circuit safety is improved.

Further, each low voltage jumper region 121 includes a lateral section 122 and a vertical section 123.

The lateral section 122 extends along the second direction and is located between the low voltage conductive region 111 and the control side frame 210, the lateral section 122 is electrically connected with the control side frame 210, the vertical section 123 extends along the first direction and is located at one side of the low voltage conductive region 111 in the second direction, the vertical section 123 is connected with the lateral section 122, and the low voltage reverse conductive power chip 310 is electrically connected with the vertical section 123.

Specifically, the driving chip 211 of the control side frame 210 may be connected to one end of the transverse section 122 opposite to the vertical section 123, and the low-voltage reverse conducting power chip 310 may be connected to one end of the vertical section 123 opposite to the transverse section 122, so that not only the low-voltage jumper area 121 may be used to replace the wire 600 to connect the driving chip 211 and the low-voltage reverse conducting control chip, but also the low-voltage jumper area 121 may not excessively occupy the space of the low-voltage conductive area 111, so that the low-voltage reverse conducting power chip 310 is conveniently mounted in the low-voltage conductive area 111, and the layout of the low-voltage jumper area 121 and the low-voltage conductive area 111 is more regular, which is beneficial to reducing the area of the substrate 100, thereby reducing the volume of the substrate 100 and making the whole volume of the intelligent power module 1 smaller.

In some embodiments of the present utility model, as shown in fig. 1 and 2, the low voltage jumper region 121 is closer to the low voltage reverse conducting type power chip 310 than the link 230, that is, the distance between the low voltage jumper region 121 and the low voltage reverse conducting type power chip 310 is smaller than the distance between the link 230 and the low voltage reverse conducting type power chip 310, so that the length of the conductive member 600 connected between the low voltage jumper region 121 and the low voltage reverse conducting type power chip 310 can be reduced while ensuring that the conductive member 600 connected between the low voltage jumper region 121 and the low voltage reverse conducting type power chip 310 does not interfere with the link 230, thereby more effectively avoiding the occurrence of short circuit or disconnection of the intelligent power module 1, and further reducing loop inductance.

In other embodiments of the present utility model, as shown in fig. 1 and 2, one end of the low voltage jumper region 121 facing the low voltage reverse conducting power chip 310 is flush with one side of the link 230 facing the low voltage reverse conducting power chip 310, so that not only is the wire 600 connected between the low voltage jumper region 121 and the low voltage reverse conducting power chip 310 guaranteed not to interfere with the link 230 in position, so as to avoid the phenomenon of short circuit or disconnection of the intelligent power module 1, but also the low voltage jumper region 121 does not excessively occupy the area of the low voltage conductive region 111, and the low voltage reverse conducting power chip 310 has more sufficient arrangement space so as to arrange the low voltage reverse conducting power chip 310.

Still further, a first notch 112 is disposed on a side of each low voltage conductive area 111 facing away from the connecting rod 230 in the second direction, an opening direction of the first notch 112 faces the control side frame 210, at least a portion of the low voltage jumper area 121 is disposed in the first notch 112, specifically, a vertical section 123 of the low voltage jumper area 121 may be disposed in the first notch 112, so that the layout of the low voltage jumper area 121 and the low voltage conductive area 111 is more compact, which is beneficial to reducing the overall dimensions of the low voltage jumper area 121 and the low voltage conductive area 111 in the second direction, so that the dimensions of the substrate 100 in the second direction can be reduced, which is beneficial to reducing the volume of the intelligent power module 1. In addition, since at least a portion of the link 230 and the low voltage jumper region 121 are disposed at opposite sides of the low voltage conductive region 111 in the second direction, the probability of interference between the link 230 and the low voltage jumper region 121 is further reduced, and thus problems such as disconnection or short circuit are avoided.

In some embodiments of the present utility model, as shown in fig. 1 and 2, high voltage jumper regions 124 are located between high voltage conductive regions 113 and control side frame 210, each high voltage jumper region 124 including an emitter jumper region 125 and a gate jumper region 126.

The emitter jumper region 125 and the gate jumper region 126 are both extended along the first direction and are arranged at intervals along the second direction, one end of the emitter jumper region 125 and one end of the gate jumper region 126 are respectively electrically connected with the control side frame 210, the other end of the emitter jumper region 125 is electrically connected with the emitter jumper region 125 of the high-voltage reverse-conduction power chip 320, and the other end of the gate jumper region 126 is electrically connected with the gate of the high-voltage reverse-conduction power chip 320.

It should be noted that, the cross-sectional area of the emitter jumper region 125 is larger than the cross-sectional area of the conductive member 600 connected between the emitter jumper region 125 and the high-voltage reverse-conduction power chip 320, and is larger than the cross-sectional area of the conductive member 600 connected between the emitter jumper region 125 and the control side frame 210; the cross-sectional area of the gate jumper region 126 is greater than the cross-sectional area of the conductive member 600 connected between the gate jumper region 126 and the high voltage reverse conducting power chip 320 and the cross-sectional area of the conductive member 600 connected between the gate jumper region 126 and the control side frame 210. In this way, loop inductance can be reduced.

The arrangement is that both ends of the emitter jumper region 125 are connected with the control side frame 210 and the high-voltage reverse-conduction power chip 320 respectively, and both ends of the gate jumper region 126 are connected with the control side frame 210 and the high-voltage reverse-conduction power chip 320 respectively, and the emitter jumper region 125 and the gate jumper region 126 cannot interfere with each other in position, and short circuit between the emitter jumper region 125 and the gate jumper region 126 of the high-voltage reverse-conduction power chip 320 can be avoided.

Further, emitter jumper region 125 is closer to high voltage reverse conducting power chip 320 than link 230, and gate jumper region 126 is closer to high voltage reverse conducting power chip 320 than link 230.

That is, the distance between the emitter jumper region 125 and the high voltage reverse conducting type power chip 320 is smaller than the distance between the link 230 and the high voltage reverse conducting type power chip 320, so that the length of the conductive member 600 connected between the emitter jumper region 125 and the high voltage reverse conducting type power chip 320 can be reduced while ensuring that the conductive member 600 connected between the emitter jumper region 125 and the high voltage reverse conducting type power chip 320 does not interfere with the link 230, thereby more effectively avoiding the occurrence of short circuit or disconnection of the intelligent power module 1, and further reducing the loop inductance.

And, the distance between the gate jumper region 126 and the high voltage reverse conducting type power chip 320 is smaller than the distance between the connecting rod 230 and the high voltage reverse conducting type power chip 320, so that the conductive piece 600 connected between the gate jumper region 126 and the high voltage reverse conducting type power chip 320 is prevented from being interfered with the connecting rod 230, the short circuit or open circuit of the intelligent power module 1 is avoided more effectively, the length of the conductive piece 600 connected between the gate jumper region 126 and the high voltage reverse conducting type power chip 320 can be reduced, and the loop inductance is further reduced.

In other embodiments of the present utility model, as shown in fig. 1 and 2, one end of the emitter jumper region 125 facing the high-voltage reverse-conducting power chip 320 and one end of the gate jumper region 126 facing the high-voltage reverse-conducting power chip 320 are flush with one side of the link 230 facing the high-voltage reverse-conducting power chip 320, so that not only is the conductive member 600 connected between the emitter jumper region 125 and the high-voltage reverse-conducting power chip 320 guaranteed not to interfere with the link 230, but also the conductive member 600 connected between the gate jumper region 126 and the high-voltage reverse-conducting power chip 320 is guaranteed not to interfere with the link 230, thereby effectively avoiding the phenomenon of short circuit or disconnection of the intelligent power module 1, but also the emitter jumper region 125 and the gate jumper region 126 do not excessively occupy the area of the high-voltage conductive region 113, and the high-voltage reverse-conducting power chip 320 has more sufficient arrangement space, so as to facilitate the arrangement of the high-voltage reverse-conducting power chip 320.

Further, a side of each high voltage conductive region 113 facing the control side frame 210 is provided with a second notch 114, and the emitter jumper region 125 and the gate jumper region 126 are disposed at the second notch 114. In this way, the layout of the emitter jumper region 125, the gate jumper region 126 and the high-voltage conductive region 113 is more compact, which is beneficial to reducing the overall dimensions of the emitter jumper region 125, the gate jumper region 126 and the high-voltage conductive region 113 in the second direction, and further reducing the dimensions of the substrate 100 in the second direction, which is beneficial to reducing the volume of the intelligent power module 1.

According to some embodiments of the present utility model, as shown in fig. 1 and 2, the high voltage reverse conducting power chips 320 are plural, the high voltage conductive area 113 is one, and the plural high voltage reverse conducting power chips 320 are all mounted on the high voltage conductive area 113. A plurality of second notches 114 are disposed on a side of the high voltage conductive area 113 facing the control side frame 210, the plurality of second notches 114 are arranged at intervals along the second direction, an emitter jumper area 125 and a gate jumper area 126 are disposed in each second notch 114, and each high voltage reverse conductive power chip 320 is electrically connected with one emitter jumper area 125 and one gate jumper area 126.

In this way, the difficulty in arranging the high-voltage conductive areas 113 can be reduced, the substrate 100 only needs to be provided with one high-voltage conductive area 113, and the high-voltage conductive areas 113 corresponding to the high-voltage reverse-conduction power chips 320 are not required to be arranged, so that the processing difficulty of the substrate 100 is greatly reduced, the production cost is reduced, and the circuit performance of the intelligent power module 1 is optimized.

It should be noted that, the plurality of low voltage conductive areas 111 are plural, and the plurality of low voltage reverse conductive power chips 310 are mounted on the plurality of low voltage conductive areas 111 in a one-to-one correspondence manner, and the plurality of low voltage conductive areas 111 are arranged at intervals along the length direction (i.e. the second direction) of the intelligent power module 1.

According to some embodiments of the present utility model, low voltage jumper region 121 is located between low voltage conductive region 111 and control side frame 210, low voltage conductive region 111 closest to link 230 is provided with a notch, and low voltage jumper region 121 is located within the notch. In this way, the layout of the low voltage jumper region 121 and the low voltage conductive region 111 is more compact, which is beneficial to reducing the overall size of the low voltage jumper region 121 and the low voltage conductive region 111, so that the size of the substrate 100 can be reduced, which is beneficial to reducing the volume of the intelligent power module 1.

In some embodiments of the present utility model, the side of the low-voltage conductive area 111 closest to the connecting rod 230 in the second direction is provided with an avoidance opening for avoiding the connecting rod 230, and the notch penetrates through the low-voltage conductive area 111 in the first direction and faces the avoidance opening, that is, the notch is communicated with the avoidance opening.

That is, the avoidance opening of the low-voltage conductive area 111 closest to the connecting rod 230 is used for avoiding the connecting rod 230, and the connecting rod 230 can extend into the avoidance opening and cannot interfere with the notch, so that the connecting rod 230 cannot interfere with the low-voltage jumper area 121 in the notch, the probability of interference between the connecting rod 230 and the low-voltage jumper area 121 is further reduced, and the problems of open circuit or short circuit and the like are avoided.

Moreover, the notch penetrates through the low-voltage conductive area 111 and faces one side of the avoidance port in the first direction, that is, the notch and the avoidance port can be communicated, so that the notch and the avoidance port can form a communicated structure, the structure of the notch and the avoidance port is facilitated to be simplified, the notch and the avoidance port are conveniently machined in the low-voltage conductive area 111, and the machining process is simpler.

In some embodiments of the present utility model, the notch extends through the low voltage conductive region 111 on a side of the low voltage conductive region that faces the link 230 in the second direction. Thus, the notch can penetrate through the edge of the low-voltage conductive area 111 facing the connecting rod 230 in the second direction, which is beneficial to simplifying the notch structure, so that when the notch is machined, the edge of the low-voltage conductive area 111 facing the connecting rod 230 in the second direction can be machined in a direction away from the connecting rod 230, and then the notch is constructed, that is, the side of the notch, which is close to the connecting rod 230 in the second direction, can be free from a side edge, the notch structure is simpler, the notch machining step is simplified, and the production efficiency of the intelligent power module 1 is improved.

In some embodiments of the present utility model, the notch extends through a side of the low voltage conductive region 111 that is oriented in the first direction toward the power side frame 220.

Therefore, the notch can penetrate through the edge of the low-voltage conductive area 111 facing the power side frame 220 in the first direction, and the structure of the notch is further simplified, so that when the notch is machined, the notch can be machined along the edge of the low-voltage conductive area 111 facing the power side frame 220 in the first direction in a direction away from the power side frame 220, and the notch is further constructed, that is, the side of the notch, which is close to the power side frame 220 in the first direction, can be free from a side edge.

In some embodiments of the present utility model, the notch may penetrate through both the side of the low voltage conductive region 111 facing the power side frame 220 in the first direction and the side of the low voltage conductive region 111 facing the link 230 in the second direction.

In other embodiments of the utility model, the sidewalls of the notch are joined and closed to each other. For example, the notch may be disposed between the connecting rod 230 and the power side frame 220 in the first direction, and the notch is disposed at an interval from the side of the low voltage conductive area 111 facing the connecting rod 230, and the notch is not communicated with the avoidance opening, so that the notch may be configured as a structure with side walls closed to each other, which is beneficial to improving structural strength of the notch, avoiding deformation of the notch, so as to facilitate arrangement of the low voltage jumper area 121, and the notch may better keep an interval with the connecting rod 230, further avoiding position interference between the connecting rod 230 and the low voltage jumper area 121, effectively avoiding position interference between the connecting rod 230 and the conductive member 600, and further avoiding occurrence of pressure break, deformation, disconnection or short circuit of the conductive member 600 by the connecting rod 230.

According to some embodiments of the present utility model, the plurality of low-voltage reverse-conduction power chips 310 are provided, the plurality of low-voltage conductive areas 111 are provided, and the plurality of low-voltage reverse-conduction power chips 310 are mounted in the plurality of low-voltage conductive areas 111 in a one-to-one correspondence manner, wherein each low-voltage conductive area 111 is provided with a notch, each notch is internally provided with a low-voltage jumper area 121, and the low-voltage reverse-conduction power chips 310 are electrically connected with the low-voltage jumper areas 121 of the low-voltage conductive areas 111.

In this way, the low-voltage reverse conducting power chips 310 are all electrically connected with the power side frame 220 through the low-voltage jumper regions 121, so that interference between the conductive members 600 of the low-voltage reverse conducting power chips 310 and the low-voltage jumper regions 121 of the adjacent low-voltage conductive regions 111 can be avoided, and the reliability of electrical connection is improved.

According to some embodiments of the present utility model, the high voltage jumper region 124 is located between the high voltage conductive region 113 and the control side frame 210, the high voltage conductive region 113 is provided with a notch, the high voltage jumper region 124 is provided in the notch, and the high voltage reverse conducting power chip 320 is electrically connected to the high voltage jumper region 124.

That is, in some embodiments of the present utility model, not only the low voltage conductive area 111 may be provided with a notch to arrange the notch in the low voltage conductive area 111, so as to facilitate the electrical connection between the low voltage reverse conductive power chip 310 and the low voltage jumper area 121 in the low voltage conductive area 111, and then the electrical connection between the low voltage jumper area 121 and the power side frame 220 is avoided, so that the position interference between the conductive member 600 for connecting the low voltage reverse conductive power chip 310 and the power side frame 220 and the connecting rod 230 is avoided, but also the notch may be arranged in the high voltage conductive area 113, so that the notch is arranged in the high voltage conductive area 113, so as to facilitate the electrical connection between the high voltage reverse conductive power chip 320 and the high voltage jumper area 124 in the high voltage conductive area 113, and then the electrical connection between the high voltage reverse conductive power chip 320 and the power side frame 220 through the high voltage jumper area 124 and the position interference between the conductive member 600 for connecting the low voltage reverse conductive power chip 310 and the power side frame 220 and the connecting rod 230 is avoided, and the position interference between the conductive member 600 for connecting the high voltage reverse conductive power chip 320 and the power side frame 220 is avoided, so that the position interference between the conductive member 600 and the power side frame is more reasonable.

Further, the side walls of the notch are joined and closed to each other. In this way, the structural strength of the notch is improved, deformation of the notch is avoided, so that the high-voltage jumper region 124 is arranged in the notch of the high-voltage conductive region 113, the notch and other components are kept at intervals better, and the situations of breakage, deformation, disconnection or short circuit of the conductive member 600 are avoided more effectively.

In some embodiments of the present utility model, as shown in fig. 1 and 2, the high voltage reverse conducting power chips 320 are plural, the high voltage conductive area 113 is one, and the plural high voltage reverse conducting power chips 320 are all mounted on the high voltage conductive area 113. In this way, the difficulty in arranging the high-voltage conductive areas 113 can be reduced, the substrate 100 only needs to be provided with one high-voltage conductive area 113, and the high-voltage conductive areas 113 corresponding to the high-voltage reverse-conduction power chips 320 are not required to be arranged, so that the processing difficulty of the substrate 100 is greatly reduced, the production cost is reduced, and the circuit performance of the intelligent power module 1 is optimized.

In addition, the high-voltage conductive area 113 is provided with a plurality of notches, the notches are arranged at intervals along the second direction, and the number of the notches is the same as that of the high-voltage reverse-conductive power chips 320, so that each high-voltage reverse-conductive power chip 320 can be electrically connected with the power side frame 220 through one high-voltage jumper area 124, and each high-voltage reverse-conductive power chip 320 can be reliably connected with the power side frame 220.

In some embodiments of the present utility model, as shown in fig. 1 and 2, the number of the low-voltage reverse-conduction power chips 310 is three, the number of the low-voltage conductive areas 111 is three, and the three low-voltage reverse-conduction power chips 310 are mounted on the three low-voltage conductive areas 111 in a one-to-one correspondence. Three high-voltage reverse-conduction power chips 320 are provided, one high-voltage conductive region 113 is provided, and three high-voltage reverse-conduction power chips 320 are mounted on the high-voltage conductive region 113.

For example, three low-voltage reverse-conducting power chips 310 may be arranged along the length direction (i.e., the second direction) of the intelligent power module 1, and three high-voltage reverse-conducting power chips 320 may be arranged along the length direction (i.e., the second direction) of the intelligent power module 1. In this way, the intelligent power module 1 can form a three-phase bridge circuit, and the low-voltage reverse-conduction type power chip 310 and the high-voltage reverse-conduction type power chip 320 are more convenient to be connected with the driving chip 211 respectively, so that the layout of the intelligent power module 1 is convenient.

In some embodiments of the present utility model, as shown in fig. 3 and 6, the smart power module 1 further includes a plastic package 400.

The substrate 100, the frame 200 and the reverse conducting power chip 300 are packaged in the plastic package 400, one surface of the substrate 100 facing away from the reverse conducting power chip 300 is flush with the surface of the plastic package 400 and is exposed out of the plastic package 400, the control side frame 210 is provided with a control side pin 212, the power side frame 220 is provided with a power side pin 221, and the control side pin 212 and the power side pin 221 extend out of the plastic package 400.

The control-side pins 212 may be plural, the power-side pins 221 may be plural, the control-side pins 212 are electrically connected to the low-voltage reverse-conduction type power chip 310 and the high-voltage reverse-conduction type power chip 320 through the driving chip 211, the control-side pins 212 extend out of the molding body 400 from one of two opposite sides in the first direction, the power-side pins 221 are electrically connected to the low-voltage reverse-conduction type power chip 310 and the high-voltage reverse-conduction type power chip 320, and the power-side pins 221 extend out of the molding body 400 from the other of two opposite sides of the molding body 400 in the first direction.

The plurality of control side pins 212 and the plurality of power side pins 221 may be made of metal copper or copper alloy, or the plurality of control side pins 212 and the plurality of power side pins 221 may be made of other materials having good electrical conductivity. The plastic package body 400 can be made of an epoxy resin material, the epoxy resin material has certain compressive strength and insulativity, the epoxy resin material can provide physical and electrical protection to prevent the chip from being impacted by external environment, and the plastic package body 400 can be made of other materials with high compressive strength and good insulativity.

Therefore, the plastic package 400 is provided to package the driving chip 211, the low-voltage reverse-conduction type power chip 310, the high-voltage reverse-conduction type power chip 320 and the substrate 100, so that the driving chip 211, the low-voltage reverse-conduction type power chip 310, the high-voltage reverse-conduction type power chip 320 and the substrate 100 can be positioned and fixed, damage to the driving chip 211, the low-voltage reverse-conduction type power chip 310, the high-voltage reverse-conduction type power chip 320 and the substrate 100 is avoided, and electrical conduction between the driving chip 211, the low-voltage reverse-conduction type power chip 310, the high-voltage reverse-conduction type power chip 320 and the substrate 100 and the outside is prevented, thereby being beneficial to improving circuit safety.

In addition, the control side pins 212 and the power side pins 221 extend out of the plastic package body 400, the control side frame 210 can connect the driving chip 211 with external electrical components through the plurality of control side pins 212, and the power side frame 200 can connect the driving chip 211 with external electrical components through the plurality of power side pins 221, so that connection is more convenient.

In some embodiments of the present utility model, as shown in fig. 3 and 6, the control side pins 212 are connected to the circuit board 500, the driving chip 211 is mounted on the circuit board 500, the driving chip 211 is packaged in the plastic package 400, and by disposing the circuit board 500, a plurality of control side pins 212 can be soldered on the circuit board 500 to electrically connect with the driving chip 211, and the circuit integration of the circuit board 500 is higher.

In other embodiments of the present utility model, as shown in fig. 3 and 6, the control side pins 212 are connected with an integrally formed base island, the driving chip 211 is mounted on the base island, the driving chip 211 is encapsulated in the plastic package 400, by providing the base island, the control side pins 212 can be electrically connected with the driving chip 211 through the base island, and the base island can be integrally formed with the control side frame 210, so that the integration level of the base island and the control side frame 210 can be improved, and the mounting is more convenient and faster.

In some embodiments of the present utility model, as shown in fig. 3 and 6, the power side frame 220 is connected to the substrate 100, and the substrate 100 includes a conductive layer 130, an insulating layer 140, and a heat dissipation layer 150.

The conductive layer 130 and the heat dissipation layer 150 are respectively disposed on two side surfaces of the insulating layer 140, the jumper region 120 and the conductive region 110 are disposed on the conductive layer 130, the jumper region 120 and the conductive region 110 can be manufactured on the conductive layer 130 through etching, bonding, sintering and other processes, the connecting rod 230 is connected to the conductive layer 130, and the heat dissipation layer 150 is exposed from the plastic package 400.

The conductive layer 130 and the heat dissipation layer 150 may be made of metal, such as metal copper or copper alloy, of course, the conductive layer 130 and the heat dissipation layer 150 are not limited to metal, and the conductive layer 130 and the heat dissipation layer 150 may be made of other materials, for example, the conductive layer 130 may be made of a material with good electrical conductivity and good thermal conductivity, the heat dissipation layer 150 may be made of a material with good thermal conductivity, the insulating layer 140 may be made of an insulating material with good thermal conductivity, such as ceramic, and of course, the insulating layer 140 may be made of other materials with insulating properties, such as AL2O3 and AlN.

Therefore, the conductive layer 130 of the substrate 100 can be used for bearing the reverse conduction type power chip 300 and connecting the control side frame 210 and the power side frame 220, and by arranging the insulating layer 140, the insulating layer 140 can separate the conductive layer 130 and the heat dissipation layer 150, and avoid electric connection between the heat dissipation layer 150 and the substrate 100, so that the reverse conduction type power chip 300 can be prevented from being electrically conducted with the outside through the heat dissipation layer 150, the electric safety of the intelligent power module 1 is improved, in addition, the heat dissipation layer 150 can dissipate heat of the substrate 100 and the reverse conduction type power chip 300, the temperature of the substrate 100 and the reverse conduction type power chip 300 is reduced, and further, when the intelligent power module 1 is prevented from running, the reverse conduction type power chip 300 generates heat accumulation, and the safety is ensured.

In some embodiments of the present utility model, as shown in fig. 3 and 6, the power side frame 220 is connected to the substrate 100, the substrate 100 includes a conductive layer 130 and an insulating heat dissipation layer 160, the substrate 100 includes the conductive layer 130 and the insulating heat dissipation layer 160, the jumper region 120 and the conductive region 110 are disposed on the conductive layer 130, the insulating heat dissipation layer 160 is disposed on a side of the conductive layer 130 away from the reverse-conducting power chip 300, the connecting rod 230 is connected to the conductive layer 130, and the insulating heat dissipation layer 160 is exposed from the plastic package 400.

The conductive layer 130 may be metal, such as copper or copper alloy, however, the conductive layer 130 is not limited to metal, and the conductive layer 130 may be made of other materials, for example, the conductive layer 130 may be made of a material having good electrical conductivity and thermal conductivity. The insulating heat dissipation layer 160 may be made of an insulating material with good heat conduction performance, for example, ceramic, and of course, the insulating heat dissipation layer 160 may also be made of other materials with insulating performance, for example, AL2O3 may also be AlN.

Therefore, the conductive layer 130 of the substrate 100 can be used for bearing the reverse conduction type power chip 300 and connecting the control side frame 210 and the power side frame 220, and the insulating layer 140 can isolate the conductive layer 130 by arranging the insulating heat dissipation layer 160, so that the conductive layer 130 is prevented from being electrically connected with the outside, the electrical safety of the intelligent power module 1 is improved, in addition, the insulating heat dissipation layer 160 can dissipate heat of the substrate 100 and the reverse conduction type power chip 300, the temperature of the substrate 100 and the reverse conduction type power chip 300 is reduced, and further, the reverse conduction type power chip 300 is prevented from generating heat accumulation and the safety is ensured when the intelligent power module 1 operates.

An electronic device according to an embodiment of the present utility model, including the intelligent power module 1 according to the above-described embodiment of the present utility model, is described below with reference to the accompanying drawings.

The electronic equipment according to the embodiment of the utility model has the advantages of good heat dissipation performance, high electricity safety and the like by utilizing the intelligent power module 1 according to the embodiment of the utility model.

Other constructions and operations of the intelligent power module 1 and the electronic device having the same according to the embodiment of the present utility model are known to those skilled in the art, and will not be described in detail herein.

In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples.

While embodiments of the present utility model have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the utility model, the scope of which is defined by the claims and their equivalents.

Claims (16)

1. An intelligent power module, comprising:

a substrate provided with conductive regions, the substrate having a center line, a first boundary line, and a second boundary line arranged at intervals along a first direction, the first boundary line and the second boundary line being symmetrically arranged about the center line, a pitch of the first boundary line and the second boundary line being 1/3 of a size of the substrate in the first direction;

the reverse conduction type power chip is arranged between the first boundary line and the second boundary line of the conductive area;

the frame comprises a control side frame, a power side frame and a connecting rod, wherein the control side frame and the power side frame are respectively arranged on two opposite sides of the substrate in the first direction and are electrically connected with the reverse-conduction power chip, and the connecting rod is connected with the substrate and staggered with the reverse-conduction power chip in the first direction.

2. The intelligent power module according to claim 1, wherein the link is located on a side of the first boundary line facing away from the second boundary line; and/or

The connecting rod is positioned on one side of the second boundary line, which is opposite to the first boundary line.

3. The intelligent power module of claim 1, wherein the link is located between the reverse-conduction power chip and the control side frame, a side of the link facing the control side frame being flush with a side of the conductive region facing the control side frame; and/or

The connecting rod is positioned between the reverse conduction type power chip and the power side frame, and one side of the connecting rod facing the power side frame is flush with one side of the conductive area facing the power side frame.

4. The intelligent power module according to claim 1, wherein the substrate is further provided with jumper areas, the jumper areas are arranged at intervals with the conductive areas, and the jumper areas are electrically connected with the reverse-conduction power chip and the control side frame respectively;

the connecting rod and the jumper area are positioned on the same side of the reverse conduction type power chip in the first direction.

5. The intelligent power module according to claim 4, wherein the reverse conducting power chips are a plurality of and are arranged at intervals along a second direction perpendicular to the first direction, the substrate is provided with a plurality of conductive areas and a plurality of jumper areas, each conductive area is provided with at least one reverse conducting power chip, and the reverse conducting power chips are connected with the jumper areas in a one-to-one correspondence;

The connecting rod is connected to two opposite sides of the base plate in the second direction.

6. The intelligent power module of claim 5, wherein the plurality of reverse-conducting power chips comprises a low voltage reverse-conducting power chip and a high voltage reverse-conducting power chip;

the plurality of conductive areas comprise a low-voltage conductive area and a high-voltage conductive area, the low-voltage reverse-conduction type power chip is arranged in the low-voltage conductive area, and the high-voltage reverse-conduction type power chip is arranged in the high-voltage conductive area;

the plurality of jumper areas includes a low voltage jumper area and a high voltage jumper area.

7. The intelligent power module of claim 6, wherein the low voltage jumper region is located between the low voltage conductive region and the control side frame;

one end of the low-voltage jumper area is close to the driving chip of the control side frame, and the other end of the low-voltage jumper area is close to the low-voltage reverse-conduction power chip;

wherein the other end of the low voltage jumper region is spaced from the link in the second direction.

8. The intelligent power module of claim 6, wherein the high voltage jumper region is located between the high voltage conductive region and the control side frame;

Each of the high voltage jumper regions comprises:

the emitter jumper area and the gate jumper area extend along the first direction and are distributed at intervals along the second direction, one end of the emitter jumper area and one end of the gate jumper area are respectively electrically connected with the control side frame, the other end of the emitter jumper area is electrically connected with an emitter of the high-voltage reverse-conduction power chip, and the other end of the gate jumper area is electrically connected with a gate of the high-voltage reverse-conduction power chip.

9. The intelligent power module according to claim 8, wherein the plurality of high voltage reverse conducting power chips are provided, the high voltage conductive area is one and the plurality of high voltage reverse conducting power chips are all mounted on the high voltage conductive area.

10. The smart power module of claim 6 wherein the low voltage jumper region is located between the low voltage conductive region and the power side frame;

and a notch is arranged in the low-voltage conducting area closest to the connecting rod, and the low-voltage jumper area is positioned in the notch.

11. The intelligent power module according to claim 10, wherein the plurality of low-voltage reverse-conduction power chips are provided, the plurality of low-voltage conductive areas are provided, and the plurality of low-voltage reverse-conduction power chips are arranged in the plurality of low-voltage conductive areas in a one-to-one correspondence manner;

And each low-voltage conductive area is provided with a notch, each notch is internally provided with a low-voltage jumper area, and the low-voltage reverse-conduction power chip is electrically connected with the low-voltage jumper area of the low-voltage conductive area.

12. The smart power module of claim 6 wherein the high voltage jumper region is located between the high voltage conductive region and the power side frame;

the high-voltage reverse-conduction type power chips are multiple, the number of the high-voltage conductive areas is one, and the multiple high-voltage reverse-conduction type power chips are all arranged in the high-voltage conductive areas;

the high-voltage conductive areas are provided with a plurality of gaps, the gaps are arranged at intervals along the second direction, each gap is internally provided with a high-voltage jumper area, the number of the gaps is the same as that of the high-voltage reverse-conduction power chips, and each high-voltage reverse-conduction power chip is electrically connected with the corresponding high-voltage jumper area.

13. The intelligent power module according to any one of claims 6-12, wherein the number of the low-voltage reverse-conduction power chips is three, the number of the low-voltage conductive areas is three, and the three low-voltage reverse-conduction power chips are installed in the three low-voltage conductive areas in a one-to-one correspondence manner;

The number of the high-voltage reverse-conduction type power chips is three, the number of the high-voltage conductive areas is one, and the three high-voltage reverse-conduction type power chips are all arranged in the high-voltage conductive areas.

14. The smart power module of any one of claims 1-12 further comprising:

the substrate, the frame and the reverse conducting power chip are packaged in the plastic package body, one surface of the substrate, which is opposite to the reverse conducting power chip, is flush with the surface of the plastic package body and is exposed out of the plastic package body, the control side frame is provided with a control side pin, the power side frame is provided with a power side pin, and the control side pin and the power side pin extend out of the plastic package body;

the control side pins are connected with a circuit board, the driving chip is mounted on the circuit board, and the driving chip is packaged in the plastic package body; or alternatively

The control side pin is connected with an integrally formed base island, the driving chip is mounted on the base island, and the driving chip is packaged in the plastic package body.

15. The smart power module of claim 14 wherein the power side frame is connected to the substrate;

The base plate includes conducting layer, insulating layer and heat dissipation layer, the conducting layer with the heat dissipation layer is located respectively the both sides surface of insulating layer, the jumper area with the conducting area is located the conducting layer, the connecting rod connect in the conducting layer, the heat dissipation layer is followed the plastic envelope body exposes, perhaps the base plate includes conducting layer and insulating heat dissipation layer, jumper area with the conducting area is located the conducting layer, insulating heat dissipation layer locates the conducting layer dorsad reverse conduction type power chip's one side, the connecting rod connect in the conducting layer, insulating heat dissipation layer is followed the plastic envelope body exposes.

16. An electronic device comprising an intelligent power module according to any of claims 1-15.