CN116351782A - 一种适用于半导体设备零部件的表面高洁净处理方法 - Google Patents
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Abstract
本发明公开一种适用于半导体设备零部件的表面高洁净处理方法,具体步骤如下:步骤一:对加工完成的半导体设备零部件进行脱脂清洗;步骤二:将脱脂清洗过后的半导体设备零部件浸入纯水中进行水洗;步骤三:将水洗后的零部件浸入混酸溶液中进行酸蚀处理;步骤四:将酸蚀过后的零部件浸入纯水中进行水洗;步骤五:将水洗后的零部件浸入酸溶液中进行超声化学清洗;步骤六:将超声化学清洗后的零部件浸入纯水中进行溢流水洗;步骤七:对溢流水洗后的零部件进行表面吹干;步骤八:使用真空烘箱对表面吹干后的零部件进行加热干燥。本方法能有效降低半导体设备零部件表面的杂质金属元素含量。能够显著提高半导体设备零部件的表面洁净度。
Description
技术领域
本发明涉及半导体设备部件洁净清洗技术领域,具体涉及一种适用于半导体设备零部件的表面高洁净处理方法。
背景技术
随着大规模集成电路技术的发展,半导体器件的集成程度不断提高。目前7nm制程的技术节点已经突破并实现量产,更小线宽的制备工艺也在研发之中。在这一尺度下,表面的颗粒、有机物、金属及吸附分子等污染物会严重影响元器件的性质,造成电子器件的失效,芯片表面的洁净程度与其性能、可靠性和稳定性紧密相关。由于晶圆的加工过程对洁净度要求非常高,任何与晶圆接触的媒介都可能对其造成污染,因此对于潜在污染物进行前期防控至关重要。
对于腔体设备的高洁净清洗能够有效降低加工过程中可能带来的污染,减少因腔体零部件的不洁净对芯片性能造成的不利影响。机械加工的合金零部件表面不可避免地粘附有油污、微颗粒和金属碎屑等污染物,对于一般的应用场合,化学溶液浸泡、高压水冲洗等常规处理流程即可以满足其洁净度要求。然而,上述清洗流程远远达不到半导体行业所需的洁净度标准,零部件表面的金属杂质残留过多,仍然存在污染晶圆的可能性。
开发金属表面的高洁净清洗工艺是半导体加工技术中急待研究解决的关键难题之一。专利CN111659640A公开了一种半导体设备腔体内铝基材多孔分气装置超洁净清洗工艺,即采用酸液浸泡、高压水射流、超声清洗等工艺实现对铝基零部件的超洁净清洗。专利CN113751414A公开了一种通过超声脱脂清洗、除锈液浸泡、化学钝化、干燥上油等操作实施的半导体零部件超高洁净清洗工艺。专利CN110449407A也报道了相近的洗净方法。上述专利中,酸液和超声波是实现超洁净清洗的必要步骤。然而,上述专利在超声清洗的过程中,采用的液体介质为纯水或脱脂剂;而对于酸液的化学清洗过程,均采用浸泡的方式。上述方法固然可以满足相应制程的洁净度要求,但仍存在进一步的提升空间。
发明内容
本申请提供了一种适用于半导体设备零部件的表面高洁净处理方法,该方法能去除铝合金和不锈钢表面的油污、微颗粒,并大幅度降低表面杂质金属元素含量,使清洗过的金属零部件满足半导体行业要求。
为实现上述目的,整个清洗过程在千级无尘室或洁净度更高的环境内进行,具体步骤如下:
步骤一:对加工完成的半导体设备零部件进行脱脂清洗,脱脂液温度50-75℃,清洗时间1-10min,同时鼓入空气进行搅拌;目的是去除零部件表面油污;
步骤二:将脱脂清洗过后的半导体设备零部件浸入纯水2-5min,同时鼓入空气进行搅拌;目的是稀释并去除表面残留脱脂剂;
步骤三:将水洗后的半导体设备零部件浸入H2O:HF:HNO3体积比为25-50:1:9的混酸溶液中进行酸蚀处理,处理时间10-45s,同时鼓入空气进行搅拌;目的是溶解零部件表面的氧化膜层;
步骤四:将酸蚀过后的半导体设备零部件浸入纯水2-5min,同时鼓入空气进行搅拌;目的是去除表面残酸;
步骤五:将水洗后的半导体设备零部件浸入酸溶液中进行超声化学清洗:对于铝合金材质的半导体设备零部件,步骤五中的酸溶液为1-3%浓度的稀硝酸,超声化学清洗时间为10-20min;对于不锈钢材质的半导体设备零部件,步骤五中的酸溶液为2-10%浓度的稀盐酸,超声化学清洗时间为30-60min;目的是去除零部件表面的杂质金属元素及颗粒污染物。
步骤六:将超声化学清洗后的半导体设备零部件浸入电阻率不低于2.5MΩ的纯水中进行溢流水洗,溢流时间为5-10min;目的是洗去残酸,以及通过稀释进一步降低零部件表面的杂质金属离子含量;
步骤七:对溢流水洗后的半导体设备零部件进行表面吹干;目的是去除表面残存水迹,防止水痕形成;
步骤八:使用真空烘箱对表面吹干后的半导体设备零部件进行加热干燥,烘干温度120-160℃,干燥时间1-4h;目的是使洗净的半导体设备零部件充分干燥。
本发明由于采用以上技术方案,与现有技术相比能够实现如下的有益效果:
1.本发明将目前普遍使用的清洗过程中的化学酸洗和超声清洗两个步骤合并为一步,简化了清洗流程,提高了生产效率。
2.本发明提出的超声化学清洗工艺能够在超声清洗和化学酸洗的基础上产生协同增强作用,其清洗效果优于两个步骤独立依次进行。
附图说明
图1为实施例1中清洗前的铝合金试片表面的扫描电子显微镜照片。
图2为实施例1中步骤四完成后铝合金试片表面的扫描电子显微镜照片,酸蚀会导致铝合金中的第二相发生松动,表现为嵌入铝合金基材中的颗粒。
图3为实施例1中清洗完成后铝合金试片表面的扫描电子显微镜照片,铝合金表面平整、洁净。
图4为对比例1中清洗完成后铝合金试片表面的扫描电子显微镜照片,相对于图3,铝合金表面毛刺较多。
图5为对比例2中清洗完成后铝合金试片表面的扫描电子显微镜照片,铝合金表面出现明显腐蚀。
具体实施方式
下面结合实施例对本发明作进一步说明:
实施例1
本实施例提供一种适用于铝合金基材的半导体设备零部件的表面高洁净处理方法,具体步骤如下:
步骤一:对6061铝合金试片进行脱脂清洗,脱脂液温度60℃,清洗时间5min,同时鼓入空气进行搅拌;
步骤二:将脱脂清洗过后的铝合金试片浸入纯水2min,同时鼓入空气进行搅拌;
步骤三:将水洗后的铝合金试片浸入H2O:HF:HNO3体积比为40:1:9的混酸溶液中进行酸蚀处理,处理时间15s,同时鼓入空气进行搅拌;
步骤四:将酸蚀过后的铝合金试片浸入纯水2min,同时鼓入空气进行搅拌;
步骤五:将水洗后的铝合金试片浸入3%的稀硝酸中进行超声化学清洗,超声化学清洗时间为10min;
步骤六:将超声化学清洗后的铝合金试片浸入纯水中进行溢流水洗,溢流时纯水电阻率3.1MΩ,溢流时间为10min;
步骤七:使用高纯氮气对溢流水洗后的铝合金试片进行表面吹干;
步骤八:使用真空烘箱将铝合金试片进行干燥,温度120℃,干燥时间2h;
清洗前的铝合金试片表面微观形貌粗糙,存在大量加工过程产生的金属碎屑,如图1所示。经过酸蚀清洗后,铝合金中的第二相因腐蚀发生松动,表现为嵌入在铝合金基材内部的颗粒物,如图2所示。经过超声化学清洗后,铝合金表面平整洁净,无金属碎屑和颗粒物残留,如图3所示。
实施例2
本实施例提供一种适用于不锈钢基材的半导体设备零部件的表面高洁净处理方法,具体步骤如下:
步骤一:对316不锈钢试片进行脱脂清洗,脱脂液温度70℃,清洗时间10min,同时鼓入空气进行搅拌;
步骤二:将脱脂清洗过后的不锈钢试片浸入纯水2min,同时鼓入空气进行搅拌;
步骤三:将水洗后的不锈钢试片浸入H2O:HF:HNO3体积比为40:1:9的混酸溶液中进行酸蚀处理,处理时间20s,同时鼓入空气进行搅拌;
步骤四:将酸蚀过后的不锈钢试片浸入纯水2min,同时鼓入空气进行搅拌;
步骤五:将水洗后的不锈钢试片浸入5%的稀盐酸中进行超声化学清洗,超声化学清洗时间为45min;
步骤六:将超声化学清洗后的不锈钢试片浸入纯水中进行溢流水洗,溢流时纯水电阻率2.7MΩ,溢流时间为8min;
步骤七:使用高纯氮气对溢流水洗后的不锈钢试片进行表面吹干;
步骤八:使用真空烘箱将不锈钢试片进行干燥,温度120℃,干燥时间1.5h;
对比例1
本对比例目的在于说明本发明采用的超声化学清洗工艺,其洗净效果优于现有技术中化学酸洗和超声清洗先后进行的清洗工艺,对比例1的具体步骤如下:
步骤一:对6061铝合金试片进行脱脂清洗,脱脂液温度60℃,清洗时间5min,同时鼓入空气进行搅拌;
步骤二:将脱脂清洗过后的铝合金试片浸入纯水2min,同时鼓入空气进行搅拌;
步骤三:将水洗后的铝合金试片浸入H2O:HF:HNO3体积比为40:1:9的混酸溶液中进行酸蚀处理,处理时间15s,同时鼓入空气进行搅拌;
步骤四:将酸蚀过后的铝合金试片浸入纯水2min,同时鼓入空气进行搅拌;
步骤五:将水洗后的铝合金试片浸入20%的硝酸中进行化学清洗,处理时间2min,同时鼓入空气进行搅拌;
步骤六:将酸洗过后的铝合金试片浸入纯水2min,同时鼓入空气进行搅拌;
步骤七:将水洗后的铝合金试片浸入纯水中进行超声溢流清洗,溢流时纯水电阻率3.4MΩ,超声清洗时间为10min,超声结束后继续溢流5min;
步骤八:使用高纯氮气对溢流水洗后的铝合金试片进行表面吹干;
步骤九:使用真空烘箱将铝合金试片进行干燥,温度120℃,干燥时间2h;
相比于实施例1中超声化学清洗后的表面形貌,如图3所示,本对比例铝合金清洗后表面残留较多的不规则金属毛刺,如图4所示,脱落后会对半导体加工造成污染。
对比例2
本对比例目的在于说明本发明采用的超声化学清洗工艺中,化学清洗和超声清洗会产生协同增强的效果,酸溶液浓度须低于现有工艺的酸洗浓度,否则会对基体材料造成腐蚀,对比例2的具体步骤如下:
步骤一:对6061铝合金试片进行脱脂清洗,脱脂液温度60℃,清洗时间5min,同时鼓入空气进行搅拌;
步骤二:将脱脂清洗过后的铝合金试片浸入纯水2min,同时鼓入空气进行搅拌;
步骤三:将水洗后的铝合金试片浸入H2O:HF:HNO3体积比为40:1:9的混酸溶液中进行酸蚀处理,处理时间15s,同时鼓入空气进行搅拌;
步骤四:将酸蚀过后的铝合金试片浸入纯水2min,同时鼓入空气进行搅拌;
步骤五:将水洗后的铝合金试片浸入20%的稀硝酸中进行超声化学清洗,超声化学清洗时间为10min;
步骤六:将超声化学清洗后的铝合金试片浸入纯水中进行溢流水洗,溢流时纯水电阻率2.6MΩ,溢流时间为10min;
步骤七:使用高纯氮气对溢流水洗后的铝合金试片进行表面吹干;
步骤八:使用真空烘箱将铝合金试片进行干燥,温度120℃,干燥时间2h;
相比于实施例1中超声化学清洗后的表面形貌,如图3所示,本对比例铝合金出现了较明显的腐蚀,如图5所示。
Claims (9)
1.一种适用于半导体设备零部件的表面高洁净处理方法,其特征在于,具体步骤如下:
步骤一:对加工完成的半导体设备零部件进行脱脂清洗;
步骤二:将脱脂清洗过后的半导体设备零部件浸入纯水中进行水洗;
步骤三:将水洗后的半导体设备零部件浸入混酸溶液中进行酸蚀处理;
步骤四:将酸蚀过后的半导体设备零部件浸入纯水中进行水洗;
步骤五:将水洗后的半导体设备零部件浸入酸溶液中进行超声化学清洗;
步骤六:将超声化学清洗后的半导体设备零部件浸入纯水中进行溢流水洗;
步骤七:对溢流水洗后的半导体设备零部件进行表面吹干;
步骤八:使用真空烘箱对表面吹干后的半导体设备零部件进行加热干燥。
2.根据权利要求1所述的一种适用于半导体设备零部件的表面高洁净处理方法,其特征在于,所述的零部件材质为铝合金或不锈钢,整个清洗过程在千级无尘室或洁净度更高的环境内进行。
3.根据权利要求1所述的一种适用于半导体设备零部件的表面高洁净处理方法,其特征在于,所述步骤一中脱脂液温度50-75℃,清洗时间1-10min,同时鼓入空气进行搅拌。
4.根据权利要求1所述的一种适用于半导体设备零部件的表面高洁净处理方法,其特征在于,所述步骤三中混酸溶液是H2O:HF:HNO3体积比为25-50:1:9的溶液,酸蚀处理时间10-45s,同时鼓入空气进行搅拌。
5.根据权利要求1所述的一种适用于半导体设备零部件的表面高洁净处理方法,其特征在于,步骤二、步骤四中水洗时间为2-5min,同时鼓入空气进行搅拌。
6.根据权利要求1所述的一种适用于半导体设备零部件的表面高洁净处理方法,其特征在于,所述步骤五中的酸溶液为1-3%浓度的稀硝酸,超声化学清洗时间为10-20min。
7.根据权利要求1所述的一种适用于半导体设备零部件的表面高洁净处理方法,其特征在于,对于不锈钢材质的半导体设备零部件,所述步骤五中的酸溶液为2-10%浓度的稀盐酸,超声化学清洗时间为30-60min。
8.据权利要求1所述的一种适用于半导体设备零部件的表面高洁净处理方法,其特征在于,所述步骤六中溢流水洗使用纯水电阻率不低于2.5MΩ,溢流时间为5-10min。
9.据权利要求1所述的一种适用于半导体设备零部件的表面高洁净处理方法,其特征在于,所述步骤八中的烘干温度为120-160℃,干燥时间为1-4h。
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