CN116344470A - 高度可适配的多层间隔件 - Google Patents

高度可适配的多层间隔件 Download PDF

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Publication number
CN116344470A
CN116344470A CN202211555631.0A CN202211555631A CN116344470A CN 116344470 A CN116344470 A CN 116344470A CN 202211555631 A CN202211555631 A CN 202211555631A CN 116344470 A CN116344470 A CN 116344470A
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Prior art keywords
metal layer
layer
contact material
layer stack
stack
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CN202211555631.0A
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English (en)
Inventor
A·欣里希
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Heraeus Deutschland GmbH and Co KG
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Heraeus Deutschland GmbH and Co KG
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Publication of CN116344470A publication Critical patent/CN116344470A/zh
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    • H01L2224/83493—Material with a principal constituent of the material being a solid not provided for in groups H01L2224/834 - H01L2224/83491, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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Abstract

本发明涉及一种用于在电子部件中使用的金属层堆叠，具体地作为功率电子部件中的间隔件，包括n个块体金属层和n或n+1个接触材料层，其中该块体金属层和该接触材料层以交替方式堆叠并且n至少为二。另外，本发明涉及一种用于制备该金属层堆叠的方法以及一种包括此类金属层堆叠的半导体模块。

Description

高度可适配的多层间隔件
本发明涉及适合作为功率电子器件的间隔件的金属层堆叠、包括该金属层堆叠的半导体模块和用于制造此类金属层堆叠的方法。
在现代功率电子器件中，例如在电动车辆(EV)中，存在朝向越来越高的功率密度的持续趋势。这些模块中的最大挑战中的一者是耗散由半导体生成的热量。一种方法是在芯片的表面上使用间隔件，其可帮助将热量引导到合适的散热器。
在现有技术中，间隔件由实心材料块制成，该实心材料块主要是铜或特殊的CTE适配材料(钼、钨等)。这些几乎是专门焊接的，因为在粘结期间不需要施加压力，并且焊料通常能够通过在熔融状态下形成弯月面而桥接小间隙。
所有已知技术的共同之处在于，为了在模块中桥接不同距离，必须构建单独间隔件。此外，从焊接到低温压力烧结的改变对于创建具有较高热稳定性的接头而言是有益的，但它仍然是挑战性的，因为小高度容差导致压力分布中的强烈影响，特别是当在模块内烧结若干间隔件时。原则上也有可能在不施加压力的情况下烧结。然而，无压力烧结常规上导致表现出高空隙的烧结接头，并且因此这些无压力烧结接头的长时间和/或温度稳定性较低。然而，已观察到间隔件的烧结可损坏敏感芯片结构(例如，栅极流道)并且因此必须将烧结压力减小到最小值。
因此，本发明的目的是克服现有技术的至少一个缺点。具体地，本发明的目的是提供一种间隔件，该间隔件可容易地适于桥接功率电子模块中的不同高度。
此外，本发明的一个目的是提供一种间隔件，当与现有技术的间隔件相比时，该间隔件在生产期间在如栅极流道的敏感部件上施加更小压力，同时仍然实现具有高热稳定性和机械稳定性的接头。
本目的由独立权利要求的主题解决。从属权利要求指定本发明的优选实施方案。
在第一方面，本发明涉及一种用于在电子部件中使用的金属层堆叠，包括n个块体金属层和n或n+1个接触材料层，其中该块体金属层和该接触材料层以交替方式堆叠并且n至少为二。在接触材料层的数量为n+1的情况下，第一层和最后层各自包括接触材料。
该金属层堆叠特别适合作为电子部件中的间隔件，并且更特别地适合作为功率电子部件中的间隔件。优选地，其可用于在不损坏例如在半导体芯片上的敏感结构的情况下灵活地桥接半导体芯片和相应散热器之间的间隙。例如，散热器可以是含金属的衬底。
可以由包含一个块体金属层的标准化层组件构建金属层堆叠，其中接触材料层布置在块体金属层的至少一个表面上。通过使用层组件的标准化厚度的此类模块化方法，仅通过选择正确数量的层组件，就可以低成本提供用于各种高度的间隔件。
金属层堆叠包括至少两种不同类型的金属层。金属层包括块体金属层和接触材料层。金属层包括金属或由金属组成。因此，其优选是导电和导热的。
如果用作间隔件，本发明的金属层堆叠的优点在于，与其中仅一个接触材料层布置在金属块的每一侧上的常规间隔件相比，可更容易且更有效地补偿高度容差。
在该上下文中，术语“块体”是指金属不表现出任何有意的孔隙率。例如，块体金属层的相对密度大于99.9％。术语“块体”也可被理解为“大块”金属层并且与由颗粒制成的金属层相反。
块体金属层的金属优选地包括选自由铜、钼、钨、银和铝组成的组的元素或由该元素组成。最优选地，块体金属层包括铜。块体金属层可包括元素金属或合金或由元素金属或合金组成。在本发明的上下文中，元素金属是指除了不可避免的杂质之外，金属仅由一种元素组成。在优选实施方案中，元素金属中的杂质的量不超过1重量％，具体地其不超过0.1重量％或甚至0.01重量％。杂质可以是金属杂质(例如，银)或非金属杂质(例如，氧)。合金包括至少一种金属与至少一种合金组分的组合，其中组合具有金属性质。为了清楚起见，至少一种金属和至少一种合金组分是不同的。至少一种合金组分可选自金属、半金属和非金属的组。优选地，至少一种合金组分选自由铜、钼、钨、银、铝和它们的组合组成的组。
块体金属层的厚度优选地在30μm至1000μm的范围内，优选50μm-600μm。在x方向和y方向上的尺寸优选在500μm至20mm的范围内。金属层堆叠的块体金属层可具有相同尺寸或不同尺寸。优选地，金属层堆叠的每个块体金属层具有相同厚度。另选地，块体金属层中的至少一者可具有与堆叠的其余块体金属层相比不同的厚度。
在任选实施方案中，金属层堆叠的块体金属层中的一者或多者可包括阻挡层。阻挡层优选包括选自银和镍的材料，优选镍合金，例如NiPDAu NiAg和NiAu。优选地，阻挡层位于块体金属层和接触材料层之间。
此外，金属层堆叠包含接触材料层。由接触材料层形成的接触优选是电接触、热接触和机械接触或前述的组合。接触材料层的平均厚度优选为至少5μm并且更优选为至少10μm。接触材料层的平均厚度优选为至多100μm并且具体地至多50μm。
接触材料层优选地包含接触材料前体或接头材料。接触材料前体能够转变成接头材料。接触材料可选自焊料材料、烧结材料和导电粘合剂材料。接触材料前体可以是焊料前体、烧结前体或导电粘合前体。接头材料可以是焊接接头、烧结接头或导电粘合剂接头。
焊料材料可包括焊料前体或焊接接头。烧结材料可包括烧结前体或烧结接头。导电粘合剂可包含导电粘合前体或导电粘合剂接头。
典型地，焊料前体可被转换成焊接接头，烧结前体可被转化成烧结接头，并且粘合前体可被转化成粘合剂接头。
如果接触材料前体是焊料前体，则它可被熔融并且随后在冷却时硬化以产生焊接接头。焊料前体可包括电子器件领域技术人员将认为可用于电子部件领域的任何焊料合金或由其组成。优选地，焊料材料包括焊料合金，其包含选自铅、锡、锌、铋、银、铜或它们的任意组合的组的元素中的至少一种。示例是锡-银-合金和锡-银-铜-合金，其任选地包括至少一种附加元素，例如镍、钴、铋、锑、锗、镓和铟。
焊料前体优选是焊膏或焊料箔。焊膏可根据本领域技术人员的知识来选择。焊膏可优选包含本文所指定的焊料合金的粉末并且可另外包括承载体。承载体可包括选自由溶剂、流变改性剂、助熔剂和稳定剂组成的组的至少一种组分。任选地，一种组分可属于这些类别中的多于一者。溶剂可以是有机溶剂或水性溶剂。
任选地，焊膏可以是可流动的焊膏或干燥的焊膏。干燥的焊膏可以是固体，但可包含承载体的小部分。在干燥的焊膏中，焊料合金颗粒优选不熔融在一起。
焊料箔可以是焊料合金箔，其任选地包括助熔剂。
焊料前体可被转换成焊接接头。该过程被称为焊接。通过加热焊料前体，焊料合金熔化。典型地，熔融合金与其接触的组分形成合金。在本发明的情况下，熔融合金可与块体金属层的材料形成合金。在熔体在固相线温度下冷却之后，它形成焊接接头。焊接接头优选地形成热接触、电接触和机械接触中的至少一者。
在特别优选的实施方案中，接触材料层包括选自烧结前体和烧结接头的烧结材料。在接触材料前体是烧结前体的情况下，它可优选地被加热和/或压制和/或超声处理以形成烧结接头。烧结材料包括金属。烧结材料(即，烧结前体或烧结接头)优选地包括选自由银、铜、铝、锡、铟、铋、镍和锌或它们的组合组成的组的元素或由其组成。最优选地，烧结材料中的金属包括选自银和铜的元素。具体地，烧结材料的金属包括至少80重量％的铜或银和0-20重量％的选自包括铝、锡、铟、铋、镍和锌的组的金属，每一者基于金属的总重量。
在优选具体方案中，烧结前体可选自烧结膏和烧结箔。烧结膏优选包括金属粉末，该金属粉末包含本文中针对烧结材料指定的元素。此外，烧结膏优选包含承载体。承载体可包含选自由溶剂、烧结助剂、流变改性剂、热固性树脂和热塑性树脂组成的组的一种或多种组分。承载体中的溶剂可以是有机溶剂或水性溶剂。在另一个优选实施方案中，烧结膏可包括选自石墨、石墨烯和导电碳(例如，CNT)的组分。任选地，烧结膏是可流动的烧结膏或干燥的烧结膏。干燥的烧结膏是固体，其包括承载体的部分。因此，干燥的烧结膏在室温下不流动。
烧结箔可包括金属粉末，该金属粉末已经被布置成特定尺寸并且以它保持该尺寸的方式被稳定，例如以片材形式的预成形和干燥的烧结膏。
在优选实施方案中，烧结前体(具体地烧结膏)可被转换成烧结接头。烧结接头(具体地当由烧结膏制备时)优选包含烧结颗粒，该烧结颗粒在其与相邻颗粒的接触点处彼此连接。在烧结接头中，烧结颗粒的形态可至少部分地被保持。在低于烧结前体中包含的金属的熔化温度时，发生烧结前体向烧结接头的转换。
如果接触材料前体是粘合剂前体，则它可优选地被加热、用光处理、或用化学品处理以形成粘合剂接头。
导电粘合前体可包括有机单体或聚合物。任选地，导电粘合前体可以是填充有导电颗粒的单组分或多组分聚合物树脂体系。优选地，多组分聚合物树脂体系包含可交联组分和交联剂。如果两者发生反应，则通常形成热固性材料。为了引发该反应，可固化导电粘合前体。固化可通过热处理、光或通过添加化学品(例如，引发剂)来进行。
任选地，金属层堆叠可包含至少一个附加层。在特别优选的实施方案中，金属层堆叠的每个块体金属层与附加层接触。附加层可包括选自阻挡层、密封剂层、助焊剂、烧结助剂、助熔剂、助粘剂、介电层、可逆或不可逆粘合剂层的组的至少一种组分。在一个实施方案中，附加层可以是预固定剂。预固定剂可用于例如在生产过程期间将金属层堆叠暂时和可逆地固定到载体，或者促进金属层堆叠的运输。另选地，预固定剂可用于在接触材料前体转换成接头材料之前将金属层堆叠预先固定到半导体芯片或衬底(例如，DCB衬底)。这可允许金属层的容易堆叠。
具体地，预固定剂是包括热塑性聚合物的粘合剂。热塑性聚合物可以20至45重量％的量存在于预固定剂中。此外，预固定剂可包括有机承载体。有机承载体可以40至70重量％的量存在。有机承载体可包括至少一种有机溶剂。另外，预固定剂可包括1至25重量％的无机填料颗粒和0至10重量％的其他添加剂。
任选地，至少一个附加层可布置在至少一个接触材料层和至少一个块体金属层之间。在另一个优选实施方案中，至少一个附加层可紧接着至少一个块体金属层或至少一个接触材料层布置。例如，至少一个附加层可紧接着至少一个接触材料层布置，或者至少一个附加层可围绕至少一个接触材料层。
金属层堆叠包括n个块体金属层和n或n+1个接触材料层，其中块体金属层和接触材料层以交替方式堆叠，其中n至少为二。原则上，对于n没有上限，但从实际或经济的观点来看，最可能的是金属层可能不会包含多于20-30个块体金属层。如果接触材料层的数量为n+1，则金属层堆叠的第一层和最后层包括接触材料。换句话说，在该实施方案中，金属层堆叠的金属层和接触材料层优选地以交替方式堆叠，同时堆叠优选地以接触材料层开始和结束。块体金属层的最小量为二。因此，最小序列是两个块体金属层和两个接触材料层的四层堆叠。以本发明的该最小金属层堆叠作为起点，任选地，一个块体金属层和一个接触材料层的一个或多个层组件可被添加到最小序列堆叠的顶部上。这将产生与三个接触材料层组合的三个块体金属层、与四个接触材料层组合的四个块体金属层等。任选地，最终接触材料层可布置在具有相等数量的块体金属层和接触材料层的金属层堆叠上。金属层堆叠中包括的接触材料层越多，堆叠在用作间隔件时可补偿的高度容差和不均匀表面形貌就越好。
任选地，两个块体金属层或两个接触材料层不会彼此直接接触。另选地，金属层堆叠中的块体金属层中的至少两者可彼此直接接触。例如，如果接触材料层小于两个相邻块体金属层并且这些块体金属层朝向彼此弯曲，则可能发生这种情况。任选地，块体金属层和接触材料层的尺寸相同或不同。具体地，接触材料层可小于块体金属层。在图5中例示了这种场景。
金属层堆叠的块体金属层可相同或不同。优选地，块体金属层具有相同的尺寸和/或包括相同的材料，因为这允许金属层堆叠的材料和成本有效的生产。
堆叠的接触材料层可相同或不同。例如，末端接触材料层中的至少一者(即，第一和/或最后接触材料层)可不同于堆叠在两个块体金属层之间的至少一个接触材料层。例如，金属层堆叠的接触材料层可具有不同的组成或者不同的厚度。优选地，接触材料层具有相同的组成。优选地，金属层中的接触材料层具有相同厚度。
优选地，没有对块体金属层和接触材料层的几何形状的限制。例如，从顶视图来看，它们可形成正方形、椭圆形或圆形形状。优选的是，层为矩形。
在第二方面，本发明涉及一种包括根据本发明的金属层堆叠的间隔件的前体，其中至少一个接触材料层包括烧结前体材料。优选地，与另外的部件(例如，衬底或半导体芯片)接触的末端接触材料层(即堆叠的第一接触材料层和最后接触材料层)包括烧结前体材料，该烧结前体材料尚未被转换成烧结接头。间隔件的前体可在一个位置处生产并且运输到另一个位置，在该位置它可被合并到半导体模块(例如，功率电子模块)中。
在第三方面，本发明涉及一种半导体模块，其中半导体芯片的第一表面与如本文所述的根据本发明的金属层堆叠的第一接触材料层接触。为了清楚起见，在前面部分中的针对金属层堆叠详述的所有规格优选也适用于作为半导体模块的一部分的金属层堆叠。例如，半导体模块可以是功率电子模块。功率电子模块通常适合于传导和控制高达几百安培的高电流。
在优选实施方案中，衬底附接到金属层堆叠的最后接触材料层。换句话说，金属层堆叠建立半导体芯片和衬底之间的连接。连接优选具有良好的导热性和/或导电性。
在本发明的另一个优选模式中，半导体芯片包括不平坦的表面形貌。如果至少一个电子结构(例如，栅极流道)布置在半导体芯片和金属层堆叠之间的表面上，则这可任选地发生。具体地，栅极流道部分地或完全地由末端接触材料层覆盖。
在半导体模块中，金属层堆叠优选地用作间隔件。间隔件可被看作是电子或半导体模块中的部件，其用于桥接两个其他部件之间的距离以便建立良好的电和/或热接触。作为间隔件的金属层堆叠具有以下优点：通过堆叠具有标准化厚度的多个块体金属层，可以高度灵活的方式桥接半导体模块中的不同距离。因此，不需要生产被单独地调整以桥接特定间隙的不同高度的间隔件，但技术人员可选择多个金属层以产生所需高度的间隔件。
在半导体模块中，金属层堆叠具有积极效果：在生产过程期间(例如，在烧结期间)将较小压力施加到敏感且升高的结构(如栅极流道)。这最可能是因为金属层堆叠中的可成形接触材料的增加的体积。因此，如果金属层堆叠用作间隔件，则其可比仅包括一个较厚块体金属层的现有技术的刚性间隔件更好地补偿不平坦的表面和高度差。
优选地，半导体芯片的与第一表面相对的第二表面接触第二衬底。任选地，半导体模块的一个或多个衬底可选自由金属陶瓷衬底、绝缘金属衬底、有机衬底、具有有机绝缘体的衬底、引线框、印刷电路板和陶瓷衬底组成的组。
在任选实施方案中，金属层堆叠的接触材料是烧结接头，并且烧结接头在层内表现出变化的高度厚度，或者烧结接头表现出变化的密度或孔隙率。这种密度或高度的变化可任选地由于补偿半导体模块中的不同高度或者由于补偿衬底或半导体芯片上的表面结构而产生。例如，在压力烧结之后，在栅极流道上方的一个或多个烧结材料层的密度可高于紧接着栅极流道的密度。
优选地，包括在半导体模块中的金属层堆叠的所有层具有相同电势。另选地，并且具体地在金属层堆叠在堆叠内包括介电层的情况下，金属层堆叠的层可具有不同电势。
在本发明的优选实施方案中，半导体模块的半导体芯片与至少两个金属层堆叠接触。优选地，半导体模块中的这些至少两个金属层堆叠具有不同电势。这可例如在半导体芯片的每个接触焊盘与单独金属层堆叠接触的情况下实现。例如，金属层堆叠可布置在半导体芯片的漏极、源极和栅极接触点中的每一者上。
在第四方面，本发明涉及一种用于生产金属层堆叠并且具体地生产本发明的金属层堆叠的方法，包括以下步骤：
a)提供载体，
b)提供包括布置在块体金属层上的接触材料前体层的第一层组件，
c)将层组件布置在载体上，使得接触材料前体层与载体接触，
d)提供包括布置在块体金属层上的接触材料前体的第二层组件，
e)将该第二层组件布置在该第一层组件的该块体金属层上，使得该第二层组件的该接触材料前体与该第一层组件的该块体金属层接触，
f)任选地重复步骤d)和e)。
任选地，方法可在指定步骤a)至f)之前、之间或之后包含附加步骤。更优选地，步骤a)至f)的顺序不改变。
在步骤a)中，提供载体。载体可以是半导体芯片、衬底、功率电子模块的一部分或临时载体。
在步骤b)中，提供第一层组件，其中该第一层组件包括布置在块体金属层上的接触材料前体层。层组件可例如通过将接触材料前体层印刷在块体金属层上(例如，通过丝网印刷)来制备。优选地，第一层组件的接触材料前体层包括烧结膏。更优选地，使布置在块体金属层上的烧结膏干燥。在优选实施方案中，第一层组件包括附加层，具体地附加层是预固定剂，例如粘合剂。
在步骤c)中，将第一层组件布置在载体上，使得接触材料前体层与载体接触。任选地，接触材料前体可在将其布置在载体的表面上之后转换成接头材料。
在步骤d)中，提供了包括布置在块体金属层上的接触材料前体的另一层组件。任选地，第一层组件和另一层组件相同或不同。在所制备的金属层堆叠仅包括两个块体金属层的情况下，另一层组件可以是不同的。在这种情况下，另一层组件包括块体金属层，其中在该块体金属层的两侧上布置有相应的接触材料前体层。另选地，第一层组件和另一层组件是相同的。优选地，第二层组件以与第一层组件相同的方式进行制备。
在特别优选的实施方案中，堆叠层组件的最后序列的另一层组件不同于先前层组件。最后层组件包括块体金属层，其具有布置在块体金属层的两个表面上的接触材料前体层。这是为了确保所得金属层堆叠的最后层是接触材料层，该接触材料层可接触例如衬底(例如，DCB或散热器)。
在步骤e)中，将另一层组件布置在第一层组件的块体金属层上，使得第二层组件的接触材料前体与第一层组件的块体金属层接触。
任选地，重复步骤d)和e)直到获得金属层堆叠并且实现金属层堆叠的所需高度。在一个优选实施方案中，在用于制备金属层堆叠的步骤d)和e)的最后序列中，另一层组件不同于先前层组件。具体地，在步骤d)和e)的最后序列中的另一层组件包括块体金属层，其中在该块体金属层的两侧上布置有接触材料前体层。具体地，针对块体金属层和接触材料层规格细节可适用于另一层组件，该另一层组件是具有布置在块体金属层的两侧上的接触材料层的方法的最后层组件。
在另一个优选实施方案中，在该方法中使用的所有层组件是相同的。这可产生金属层堆叠，其中金属层堆叠的最后层是块体金属层。
任选地，方法包括步骤g)，其中将包括接触材料层前体的至少一个或所有接触材料层转换成接头材料。优选地，在所有接触材料层前体转换成接头材料之后，金属层堆叠可被称为间隔件。
接触材料前体向接头材料层的转换可通过加热、通过施加压力、通过施加化学品、通过施加电磁辐射或通过它们的组合来实现。转换方法的选择取决于接触材料的种类，并且技术人员具有用于选择适当方法的知识。
在加热接触材料前体层的情况下，优选将其加热至高于焊料材料的熔化温度、烧结前体的烧结温度(例如，<300℃)或粘合剂材料前体的固化温度。
任选地，方法包括一个或多个热处理步骤，该热处理步骤至少在最后层组件被布置之后进行，其特征在于，接触材料前体被转换成接头材料。
另选地，方法可以载体上的接触材料层开始。随后，可在该接触材料层上布置层组件，使得层组件的块体金属层与接触材料层接触。在下一个步骤中，将另一层组件布置在第一层组件上，使得另一层组件的块体金属层与第一层组件的接触材料层接触。以此方式，可获得金属层堆叠。针对金属层堆叠详述的技术特征优选也适用于该实施方案。
在第五方面，本发明涉及一种通过连续和交替堆叠接触材料层和块体金属层来生产本发明的金属层堆叠的方法。
例如，该方法可包括：
a)提供载体，
b)提供接触材料，
c)将第一接触材料施加在载体的表面上，使得获得接触材料层，
d)在接触材料层上布置第一块体金属层。
e)在块体金属层上布置另一接触材料以获得另一接触材料层，
f)在另一接触材料层的表面上布置另一块体金属层，以及
g)任选地重复步骤e)和f)中的至少一者或多者直到获得本发明的金属层堆叠。
在优选实施方案中，通过该方法获得的金属层堆叠以块体金属层终止。另选地，通过该方法获得的金属层堆叠可以接触材料层终止。
在第六方面，本发明涉及一种用于生产半导体模块的方法。优选地，方法可包括针对用于生产金属层堆叠的方法指定的所有步骤，其中附加限制在于该方法的步骤a)中的载体是半导体芯片或衬底。
在一个优选实施方案中，用于生产半导体模块的方法的金属层堆叠包括将块体金属层作为最后层。在该金属层堆叠上，可布置衬底、散热器或芯片，其中衬底、散热器或芯片可包括与金属层堆叠的最后块体金属层接触的接触金属层。
附图说明
图1示出了包括金属层堆叠(1)、半导体芯片(20)和衬底(10和10')的半导体模块。半导体芯片(20)布置在衬底(10)上。在半导体芯片(20)的相对表面上布置金属层堆叠(1)。金属层堆叠(1)包含块体金属层(30)和接触材料层(40)，其中块体材料层(30)和接触材料层(40)以交替方式堆叠。金属层堆叠(1)的最后接触材料层(40b)与衬底(10')接触。第一接触材料层(40a)与半导体芯片(20)接触。
图2示出了半导体模块，其中金属层堆叠(1)位于衬底(10')和半导体芯片(20)之间，其中高度(h)和(h')彼此不同。金属层堆叠(1)能够补偿这种高度不匹配。高度差的补偿主要由表现出变化压缩量的接触材料层(40)补偿。与右侧相比，接触材料层(40)在半导体模块的左侧上被更大地压缩。因此，总高度(h)小于总高度h'。
图3显示了半导体模块，其中栅极流道(21)位于金属层堆叠(1)和半导体芯片(20)的表面之间。如可见的，金属层堆叠(1)在区域(22)中变形严重。这使得金属层堆叠(1)能够补偿半导体芯片(20)上的表面粗糙度。变形主要发生在接触材料层(40)中。任选地，区域(22)中的接触材料层(40)的密度高于该区域外的密度。块体金属层(30)主要弯曲以适应栅极流道(20)，但它们的厚度不显著变化。在该示例中，金属层堆叠能够补偿栅极流道(21)使得衬底(10)和(10')可彼此平行地取向。另外，可防止金属层堆叠由于半导体芯片(20)上的栅极流道(21)压力峰值而补偿高度变化。
图4示出了半导体模块的另一个实施方案，其中金属层堆叠(1')包括附加层(41)。附加层(41)紧接着金属层堆叠(1')的末端接触材料层布置。附加层(41)可例如包含预固定剂。在附加层(41)包含预固定剂的情况下，它们可用于将金属层堆叠分别预固定到衬底(10')和半导体芯片(20)两者的表面。任选地，附加层(41)也可位于两个块体金属层(30)之间，如图4所描绘。另选地，附加层(41)仅存在于末端层中。此外，图4所示的半导体模块包括附加金属层堆叠(1)，其设置在半导体芯片(20)的相对表面上。优选地，金属层堆叠1和半导体芯片(20)之间的接触被最大化以改善由半导体芯片(20)生成的热量的耗散。
图5示出了半导体模块的示例，其中金属层堆叠(1)的块体金属层(30)朝向彼此弯曲。更具体地，图5中的下部的两个块体金属层(30)彼此接触，而接触材料层(40)小于块体金属层(30)。
图6示出用于生产金属层堆叠和半导体模块的示意性方法。在6a)中，在衬底(10)上提供半导体芯片(20)。在步骤6b)中，提供第一层组件(50)，其包含布置在块体金属层(30)上的接触金属层(40)。接触金属层(40)面向半导体芯片。在步骤6c)中，提供另一层组件(50')。另一层组件(50')是添加到金属层堆叠的最后层组件。任选地，接触材料层(40)可在该另一层组件中布置在两侧上(未示出)。另一层组件(50')布置在第一层组件(50)的块体金属层上。在步骤6d)之后，获得金属层堆叠(1)。同时，获得包括金属层堆叠(1)的半导体模块。任选地，在步骤6e)中，将另一衬底10'布置在金属层堆叠的最后层上。步骤6e)中的衬底包括接触材料层(40b)，其可被视为在接触材料前体材料转化成接头材料之后的金属层堆叠的最后层。在方法的最后层组件包括在块体金属层的两侧上的接触材料层(即金属层堆叠的末端层包括接触材料层)的情况下，另一衬底(10')优选地不具有接触材料层。任选地，在步骤6e)之后，金属层堆叠的接触金属层(40)可从接触材料前体层转变成接头材料。例如，如果接触材料层包含烧结前体，则其可通过压力和/或热量转换成烧结接头(未示出)。步骤6f)示出了根据本发明的半导体模块的另一个实施方案，其可通过本发明的方法来获得。
附图标号的列表
(1,1')金属层堆叠
(10,10')衬底
(20)半导体芯片
(21)栅极流道
(22)区域(栅极流道上方)
(30)块体金属层
(40)接触材料
(40a)第一接触材料层
(40b)最后接触材料层
(41)附加层
(50)第一层组件
(50')另一层组件
(h,h')金属层堆叠的高度

Claims (16)

1.一种用于在电子部件中使用的金属层堆叠，包括n个块体金属层和n或n+1个接触材料层，其中所述块体金属层和所述接触材料层以交替方式堆叠并且n至少为二。
2.根据权利要求1所述的金属层堆叠，其中所述接触材料层包括烧结材料。
3.根据权利要求1或2所述的金属层堆叠，其中所述接触材料层的平均厚度在10μm至100μm的范围内。
4.根据权利要求1至3中任一项所述的金属层堆叠，其中所述块体金属层包括选自由铜、钼、钨、银、铝和它们的组合组成的组的金属。
5.根据权利要求1至4中任一项所述的金属层堆叠，其中所述块体金属层的平均厚度在50μm至600μm的范围内。
6.根据权利要求1至5中任一项所述的金属层堆叠，其中所述烧结材料是烧结前体或烧结接头。
7.根据权利要求1至6中任一项所述的金属层堆叠，其中所述烧结材料包括选自由银、铜、铝、锡、铟、铋、镍和锌组成的组的金属。
8.一种半导体模块，其中半导体芯片的第一表面与根据权利要求1至7中任一项所述的金属层堆叠的第一接触材料层接触。
9.根据权利要求8所述的半导体模块，其中衬底附接到所述金属层堆叠的所述最后接触材料层。
10.根据权利要求8或9所述的半导体模块，其中至少一个栅极流道布置在所述半导体芯片和所述金属层堆叠之间。
11.根据权利要求8至10中任一项所述的半导体模块，其中所述金属层堆叠用作间隔件。
12.根据权利要求8至11中任一项所述的半导体模块，其中所述半导体芯片的与所述第一表面相对的第二表面接触第二衬底。
13.根据权利要求8至12中任一项所述的半导体模块，其中所述半导体模块的一个或多个衬底选自由金属陶瓷衬底、有机衬底、绝缘金属衬底、引线框和陶瓷衬底组成的组。
14.一种包括根据权利要求1至7中任一项所述的金属层堆叠的间隔件的前体，其中所述金属层堆叠的至少所述第一接触材料层或所述最后接触材料层包括烧结前体。
15.一种用于生产优选地根据权利要求1至7中任一项所述的金属层堆叠的方法，包括以下步骤：
a)提供载体，
b)提供包括布置在块体金属层上的接触材料前体层的第一层组件，
c)将所述层组件布置在所述载体上，使得所述接触材料前体层与所述载体接触，
d)提供包括布置在块体金属层上的接触材料前体的第二层组件，
e)将所述第二层组件布置在所述第一层组件的所述块体金属层上，使得所述第二层组件的所述接触材料前体与所述第一层组件的所述块体金属层接触，以及
f)任选地重复步骤d)和e)。
16.根据权利要求15所述的方法，包括步骤g)：将所述接触材料前体层转换成接头材料层。
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