CN116325493B - 多赫蒂放大器 - Google Patents

多赫蒂放大器 Download PDF

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Publication number
CN116325493B
CN116325493B CN202080105811.1A CN202080105811A CN116325493B CN 116325493 B CN116325493 B CN 116325493B CN 202080105811 A CN202080105811 A CN 202080105811A CN 116325493 B CN116325493 B CN 116325493B
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CN
China
Prior art keywords
delay circuit
phase delay
output
circuit
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080105811.1A
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English (en)
Chinese (zh)
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CN116325493A (zh
Inventor
佐佐木善伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
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Publication of CN116325493A publication Critical patent/CN116325493A/zh
Application granted granted Critical
Publication of CN116325493B publication Critical patent/CN116325493B/zh
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/222—A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/206—Wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/226—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for HF amplifiers
    • H10W44/234—Arrangements for impedance matching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
CN202080105811.1A 2020-12-03 2020-12-03 多赫蒂放大器 Active CN116325493B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/045111 WO2022118445A1 (ja) 2020-12-03 2020-12-03 ドハティ増幅器

Publications (2)

Publication Number Publication Date
CN116325493A CN116325493A (zh) 2023-06-23
CN116325493B true CN116325493B (zh) 2024-12-06

Family

ID=81853053

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080105811.1A Active CN116325493B (zh) 2020-12-03 2020-12-03 多赫蒂放大器

Country Status (4)

Country Link
US (1) US12424980B2 (https=)
JP (1) JP7529042B2 (https=)
CN (1) CN116325493B (https=)
WO (1) WO2022118445A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240243700A1 (en) * 2023-01-13 2024-07-18 Qorvo Us, Inc. Methods and techniques to achieve target phase shift over wide frequency band in the input of doherty power amplifiers
CN118160221A (zh) * 2024-02-01 2024-06-07 苏州华太电子技术股份有限公司 一种多赫蒂功率放大器
JPWO2025196988A1 (https=) * 2024-03-21 2025-09-25

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014045373A (ja) * 2012-08-27 2014-03-13 Ryukoku Univ マイクロ波フィルタ及びその調整法
CN109450383A (zh) * 2018-11-27 2019-03-08 江苏大学 一种基于相位延迟双频输出匹配网络的宽带双频段Doherty功率放大器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2463547A (en) * 1945-01-23 1949-03-08 Allen S Meier Broad band antenna
US4814780A (en) * 1988-03-11 1989-03-21 Itt Gilfillan, A Division Of Itt Corporation Variable directional coupler
CN100477494C (zh) * 2002-08-19 2009-04-08 Nxp股份有限公司 大功率多赫蒂放大器
KR100450744B1 (ko) * 2002-08-29 2004-10-01 학교법인 포항공과대학교 도허티 증폭기
JP2010050611A (ja) 2008-08-20 2010-03-04 Hitachi Kokusai Electric Inc ドハティ増幅器
US9531328B2 (en) * 2014-12-16 2016-12-27 Nxp Usa, Inc. Amplifiers with a short phase path, packaged RF devices for use therein, and methods of manufacture thereof
CN108702134B (zh) 2016-02-23 2022-04-01 三菱电机株式会社 负载调制放大器
US9899976B2 (en) * 2016-06-17 2018-02-20 Infineon Technologies Americas Corp. Compact chireix combiner and impedance matching circuit
US10911003B2 (en) * 2017-01-24 2021-02-02 Mitsubishi Electric Corporation Doherty amplifier
KR101910896B1 (ko) * 2017-06-27 2018-10-23 성균관대학교 산학협력단 피킹 증폭기의 출력 정합회로에 공진회로를 사용하는 광대역 도허티 전력증폭기
US11201591B2 (en) * 2019-03-20 2021-12-14 Cree, Inc. Asymmetric Doherty amplifier circuit with shunt reactances
JP2020184749A (ja) * 2019-04-05 2020-11-12 住友電工デバイス・イノベーション株式会社 集積ドハティ増幅器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014045373A (ja) * 2012-08-27 2014-03-13 Ryukoku Univ マイクロ波フィルタ及びその調整法
CN109450383A (zh) * 2018-11-27 2019-03-08 江苏大学 一种基于相位延迟双频输出匹配网络的宽带双频段Doherty功率放大器

Also Published As

Publication number Publication date
JPWO2022118445A1 (https=) 2022-06-09
JP7529042B2 (ja) 2024-08-06
WO2022118445A1 (ja) 2022-06-09
US12424980B2 (en) 2025-09-23
US20230299721A1 (en) 2023-09-21
CN116325493A (zh) 2023-06-23

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