CN116324019A - 薄膜晶体管的制造方法 - Google Patents
薄膜晶体管的制造方法 Download PDFInfo
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- CN116324019A CN116324019A CN202180063924.4A CN202180063924A CN116324019A CN 116324019 A CN116324019 A CN 116324019A CN 202180063924 A CN202180063924 A CN 202180063924A CN 116324019 A CN116324019 A CN 116324019A
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- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 58
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000007789 gas Substances 0.000 claims abstract description 38
- 238000009832 plasma treatment Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 13
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- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 239000001257 hydrogen Substances 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 38
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 229910052731 fluorine Inorganic materials 0.000 claims description 17
- 239000011737 fluorine Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910001882 dioxygen Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910007541 Zn O Inorganic materials 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 98
- 239000011241 protective layer Substances 0.000 description 30
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
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- 230000000694 effects Effects 0.000 description 3
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- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
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- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
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- 229910019092 Mg-O Inorganic materials 0.000 description 1
- 229910019395 Mg—O Inorganic materials 0.000 description 1
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- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003208 poly(ethylene sulfide) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Abstract
一种薄膜晶体管的制造方法,包括:等离子体处理工序,使用包含氮及氧的混合气体作为工艺气体来对半导体层的表面进行等离子体处理;以及绝缘层形成工序,使用包含SiF4、氮、氧及氢的混合气体作为工艺气体,通过等离子体CVD法,在所述等离子体处理后的半导体层之上形成绝缘层。
Description
技术领域
本发明涉及一种薄膜晶体管的制造方法。
背景技术
近年来,将In-Ga-Zn-O系(氧化铟镓锌(Indium Gallium Zinc Oxide,IGZO))的氧化物半导体用于半导体层(通道层)的薄膜晶体管的开发正在活跃地进行。在所述薄膜晶体管中,在半导体层的周边,形成有包含硅膜(SiNx)或氧化硅膜(SiOx)等的保护层或栅极绝缘层等各种绝缘层。例如,在专利文献1中记载了:通过将包含SiCl4气体、SiF4气体与氧气的混合气体用作工艺气体的等离子体化学气相沈积(Chemical Vapor Deposition,CVD)法,在半导体层之上形成包含含氟硅膜的绝缘层。
现有技术文献
专利文献
专利文献1:日本专利特开2018-195610号公报
发明内容
发明所要解决的问题
然而,专利文献1所公开的制造方法是通过300℃左右的低温工艺而形成绝缘层,因此绝缘层中的正的固定电荷密度变高,由此薄膜晶体管的阈值电压向负的方向偏移,有可靠性下降之虞。
本发明是鉴于此种问题而成者,其主要课题在于提供一种即使利用低温工艺也可形成固定电荷密度良好的绝缘层的薄膜晶体管的制造方法。
解决问题的技术手段
即,本发明的薄膜晶体管的制造方法的特征在于包括:等离子体处理工序,使用包含氮及氧的混合气体作为工艺气体来对半导体层的表面进行等离子体处理;以及绝缘层形成工序,使用包含SiF4、氮、氧及氢的混合气体作为工艺气体,通过等离子体CVD法,在所述等离子体处理后的半导体层之上形成绝缘层。
若为此种制造方法,则在对半导体层的表面进行等离子体处理而使其活性化后形成绝缘层,因此即使在例如300℃以下的低温工艺中,也可形成固定电荷密度良好的绝缘层。由此,可制造栅极阈值电压高、可靠性优异的薄膜晶体管。
作为所述绝缘层的具体形态,可列举含氟氮氧化硅膜。
绝缘层形成工序中形成的绝缘层的固定电荷密度优选为3×1011cm-2以下。
若在所述等离子体处理工序中供给的氧气的流量多,则半导体层的表面过氧化,而有无法获得固定电荷密度良好的绝缘层之虞。因此,在所述等离子体处理工序中供给的氮气的流量相对于氮气与氧气的合计流量的比例优选为70%以上,更优选为80%以上,进而优选为90%以上。
另外,优选为在所述等离子体处理工序中供给的氮气的流量相对于氮气与氧气的合计流量的比例、和在所述绝缘层形成工序中供给的氮气的流量相对于氮气与氧气的合计流量的比例相同。
据此,由于等离子体处理工序与绝缘层形成工序中的氮气与氧气的流量比例相同,因此可在稳定地维持等离子体处理工序中产生的等离子体的状态下转移到绝缘层形成工序。由此可缩短产距时间,可降低制造成本。另外,由于可在稳定地维持等离子体的状态下转移到绝缘层形成工序,因此可抑制SiF4气体等工艺气体物理吸附于半导体层与绝缘层的界面上,从而可获得密合性更高的优质界面。
作为更显著地发挥本发明的效果的形态,可列举在300℃以下进行所述等离子体处理工序及所述绝缘层形成工序的形态。
若为此种低温,则可使用树脂等熔点低的基板来制造薄膜晶体管。根据本发明的制造方法,即使在此种低温处理下也可制造包括固定电荷密度良好的绝缘层的薄膜晶体管。
作为所述半导体层的具体形态,可列举包含In-Ga-Zn-O的形态。
发明的效果
根据如此构成的本发明,可提供一种即使利用低温工艺也可形成固定电荷密度良好的绝缘层的、薄膜晶体管的制造方法。
附图说明
图1是示意性地表示本实施方式的底栅极型薄膜晶体管的结构的图。
图2是示意性地表示所述实施方式的薄膜晶体管的制造工序的图。
图3是示意性地表示所述实施方式的薄膜晶体管的等离子体处理工序中使用的等离子体处理装置的结构的图。
图4是示意性地表示其他实施方式的顶栅极型薄膜晶体管的结构的图。
图5是表示实验例中的等离子体处理与固定电荷密度的关系的图表。
具体实施方式
以下,对本发明的一实施方式的薄膜晶体管及其制造方法进行说明。
<1.薄膜晶体管>
本实施方式的薄膜晶体管1是所谓的底栅极型薄膜晶体管(Thin FilmTransistor,TFT),将氧化物半导体用于通道。具体而言,如图1所示,具有基板2、栅极电极3、栅极绝缘层4、半导体层5、源极电极6及漏极电极7、以及保护层8,且自基板2侧依次形成。此外,在此实施方式中,保护层8相当于权利要求书中所述的“绝缘层”。以下,对各部分进行详细叙述。
基板2包含可透过光的任意材料,例如可包含聚对苯二甲酸乙二酯(Polyethyleneterephthalate,PET)、聚萘二甲酸乙二酯(Polyethylene naphthalate,PEN)、聚醚砜(Polyether sulfone,PES)、丙烯酸、聚酰亚胺等塑料(合成树脂)等树脂材料或玻璃材料。
栅极电极3通过施加至薄膜晶体管1的栅极电压来控制半导体层5中的载体密度。所述栅极电极3包含具有高导电性的任意材料,例如可包含选自Si、Al、Mo、Cr、Ta、Ti、Pt、Au、Ag等中的一种以上的金属。另外,也可包含Al-Nd、Ag合金、氧化锡、氧化锌、氧化铟、氧化铟锡(Indium Tin Oxide,ITO)、氧化锌铟(Indium Zinc Oxide,IZO)、In-Ga-Zn-O(IGZO)等金属氧化物的导电性膜。栅极电极3也可包含这些导电性膜的单层结构或两层以上的层叠结构。
栅极绝缘层4包含具有高绝缘性的任意绝缘材料,例如可为包含选自SiOx、SiNx、SiON、Al2O3、Y2O3、Ta2O5、Hf2等中的一个以上的氧化物的绝缘膜。栅极绝缘层4也可为将这些导电性膜设为单层结构或两层以上的层叠结构。
半导体层(通道层)5使在源极电极6与漏极电极7之间流动的电流通过。本实施方式的半导体层5包含氧化物半导体,例如包含选自In、Ga、Zn、Sn、Al、Ti等中的至少一种元素的氧化物作为主要成分。作为构成半导体层5的材料的具体例,例如可列举:In-Ga-Zn-O(IGZO)、In-Al-Mg-O、In-Al-Zn-O或In-Hf-Zn-O等。所述半导体层5包含非晶质(amorphous)的氧化物半导体膜。本实施方式的半导体层5为单层结构,但并不限于此,也可为将组成或结晶性互不相同的多个层重叠而构成的层叠结构。
源极电极6及漏极电极7以局部覆盖半导体层5的表面的方式相互分离地形成。源极电极6及漏极电极7与栅极电极3同样,包含具有高导电性的材料,以便作为电极发挥功能。源极电极6及漏极电极7可为包含单一材料的单层结构,也可为将包含互不相同的材料的多层重叠而成的层叠结构。
保护层(钝化层)8覆盖并保护自源极电极6与漏极电极7之间露出的半导体层5的表面(通道区域),且包含绝缘性的材料。保护层8被设置成至少与半导体层5的表面接触。本实施方式的保护层8以进一步覆盖源极电极6及漏极电极7的表面的方式设置。
具体而言,所述保护层8包含含氟氮氧化硅膜(SiON:F)。所述含氟氮氧化硅膜的固定电荷密度优选为3×1011cm-2以下,更优选为1×1011cm-2以下。
此外,在保护层8之上,也可根据需要进而设置包含例如含氟氧化硅膜(SiN:F)、含氟氧化硅膜(SiO:F)、氮化硅膜(SiNx)、氧化硅膜(SiOx)等的第二保护层。
<2.薄膜晶体管的制造方法>
接着,参照图2对所述结构的薄膜晶体管1的制造方法进行说明。
本实施方式的薄膜晶体管1的制造方法包括栅极电极形成工序、栅极绝缘层形成工序、半导体层形成工序、源汲-漏极电极形成工序、等离子体处理工序及保护层形成工序。此外,在此实施方式中,保护层形成工序相当于权利要求书中所述的“绝缘层形成工序”。以下,对各工序进行说明。
(1)栅极电极形成工序
首先,如图2的(a)所示,准备包含例如PET等树脂材料的基板2,在基板2的表面形成栅极电极3。栅极电极3的形成方法并无特别限制,例如可通过真空蒸镀法等已知方法来形成。
(2)栅极绝缘层形成工序
接着,如图2的(b)所示,以覆盖基板2及栅极电极3的表面的方式形成栅极绝缘层4。栅极绝缘层4的形成方法并无特别限定,可通过已知方法来形成。
(3)半导体层形成工序
接着,如图2的(c)所示,在栅极绝缘层4上形成半导体层5。所述半导体层5可通过已知方法来形成。例如,可通过使用感应耦合型的等离子体,以InGaZnO等导电性氧化物烧结体为靶材进行溅镀来形成半导体层5。此外,并不限于此,也可通过其他方法来形成包含氧化物半导体的半导体层5。
(4)源极-漏极电极形成工序
接着,如图2的(d)所示,在半导体层5上形成源极电极6及漏极电极7。源极电极6及漏极电极7的形成例如可通过使用射频(Radio Frequency,RF)磁控溅镀等的已知方法来形成。源极电极6及漏极电极7以在半导体层5的表面上相互分离,使半导体层5的表面的一部分露出的方式形成。
(5)等离子体处理工序
接着,于在半导体层5的表面形成保护层8之前,对半导体层5的表面进行等离子体处理(成膜前处理)。具体而言,所述等离子体处理是使用图3所例示那样的感应耦合型等离子体处理装置100来进行。具体而言,等离子体处理装置100包括:真空容器20,经真空排气且在内侧形成有被导入工艺气体G的处理室10;天线30,设置于处理室10的外部;以及高频电源40,向天线30施加高频(13.56MHz)。当自高频电源40向天线30施加高频时,在处理室10内形成自天线30产生的高频磁场,由此产生感应电场,由此生成感应耦合型的等离子体P。
具体而言,在所述工序中,将至少包含氮气与氧气的混合气体作为工艺气体供给至处理室10内,在此状态下向天线30施加高频而产生感应耦合型的等离子体。关于此处供给的工艺气体,氮气的流量相对于氮气与氧气的合计流量的比例(N2/N2+O2)优选为70%以上,更优选为80%以上,进而优选为90%以上。氮气的流量比例越大,越可减小之后形成的保护层8中的固定电荷密度,因此优选。另外,所述工序优选为在基板温度为150℃以上且300℃以下的低温下进行。进行等离子体处理的处理时间并无特别限定,就进一步减小保护层8中的固定电荷密度的观点而言,优选为15秒以上且45秒以下。除此之外,RF功率、成膜时压力、工艺气体的绝对量等可适宜设定。
(6)保护层形成工序
在等离子体处理工序之后,如图2的(e)所示,以覆盖自源极电极6及漏极电极7之间露出的半导体层5的表面的方式形成保护层8。所述保护层8的形成例如使用所述等离子体CVD装置100并利用等离子体CVD法(化学气相沈积法)进行。此处,在维持等离子体处理工序中在等离子体CVD装置100的处理室10内生成的等离子体的状态下转移到保护层形成工序。
具体而言,在所述保护层形成工序中,向处理室10内供给包含SiF4(四氟化硅)气体、氮气、氧气以及氢气的混合气体作为工艺气体,在此状态下向天线30施加高频而产生感应耦合型的等离子体。在所供给的工艺气体中,氮气的流量相对于氮气与氧气的合计流量的比例(N2/N2+O2)并无特别限定,例如优选为与所述等离子体处理工序中的流量比例大致相同。另外,所述工序优选为在基板温度为150℃以上且300℃以下的低温下进行。除此之外,RF功率、成膜时压力、工艺气体的绝对量等可适宜设定。
根据需要,也可在保护层8之上形成包含例如含氟氧化硅膜(SiN:F)、含氟氧化硅膜(SiO:F)、氮化硅膜(SiNx)、氧化硅膜(SiOx)等的第二保护层。所述保护层的成膜与保护层8同样,可使用等离子体CVD装置进行。
(7)热处理工序
根据需要,也可在包含氧的大气压下的环境中进行热处理。热处理中的炉内温度并无特别限定,例如为150℃以上且300℃以下。另外,热处理时间并无特别限定,例如为1小时以上且3小时以下。
通过以上内容,可获得本实施方式的薄膜晶体管1。
<3.本实施方式的效果>
若为如此构成的本实施方式的薄膜晶体管1的制造方法,则在形成半导体层之后,在等离子体处理工序中对半导体层5的表面进行等离子体处理而使其活性化,并在此状态下形成保护层8,因此即使是300℃以下的低温工艺,也可形成固定电荷密度良好的保护层8。由此,可制造栅极阈值电压高、可靠性优异的薄膜晶体管1。
另外,由于在等离子体处理工序中供给的氮气的流量相对于氮气与氧气的合计流量的比例、和在保护层形成工序中供给的氮气的流量相对于氮气与氧气的合计流量的比例相同,因此可在稳定地维持等离子体处理工序中产生的等离子体的状态下转移到保护层形成工序。由此可缩短产距时间,可降低制造成本。另外,由于可在稳定地维持等离子体的状态下转移到保护层形成工序,因此可抑制SiF4气体等工艺气体物理吸附于半导体层5与保护层8的界面上,从而可获得密合性更高的优质界面。
<4.其他变形实施方式>
此外,本发明并不限于所述实施方式。
所述实施方式的薄膜晶体管1是自基板2侧依次层叠栅极电极3、栅极绝缘层4及半导体层5而成的底栅极型,但并不限于此。在其他实施方式中,如图4所示,薄膜晶体管1可为自基板2侧依次层叠半导体层5、栅极绝缘层4及栅极电极3而成的顶栅极型。在此情况下,层叠于半导体层5上的栅极绝缘层4相当于权利要求书中所述的“绝缘层”。在此情况下,栅极绝缘层4优选为包含含氟氮氧化硅膜(SiON:F)、含氟氧化硅膜(SiN:F)、含氟氧化硅膜(SiO:F)、氮化硅膜(SiNx)、氧化硅膜(SiOx)等,其固定电荷密度优选为3×1011cm-2以下。
另外,在薄膜晶体管1为顶栅极型的情况下,其制造方法通过依次进行上文所述的半导体层形成工序、源极-漏极电极形成工序、等离子体处理工序、栅极绝缘层形成工序及栅极电极形成工序来进行。在此情况下,栅极绝缘层形成工序相当于权利要求书中所述的“绝缘层形成工序”。
因此,在此实施方式中,栅极绝缘层形成工序是将SiF4(四氟化硅)气体、氮气、氧气及氢气的混合气体用作工艺气体,并通过等离子体CVD法来进行。具体方法与所述保护层形成工序相同。
在所述实施方式中,半导体层5包含氧化物半导体,但并不限于此。在其他实施方式中,半导体层5可包含例如非晶质Si或多晶Si等任意半导体材料。
在所述实施方式中,保护层8为含氟氮氧化硅膜,但并不限于此。在其他实施方式中,保护层8也可为包含含氟氧化硅膜(SiN:F)、含氟氧化硅膜(SiO:F)、氮化硅膜(SiNx)、氧化硅膜(SiOx)等绝缘材料的膜。
另外,在所述实施方式中,在进行半导体层形成工序及源汲-漏极电极形成工序之后进行等离子体处理工序,但并不限于此。在其他实施方式中,也可在半导体层形成工序之后且源极-漏极电极形成工序之前进行等离子体处理工序。
除此之外,本发明并不限于所述实施方式,当然能够在不脱离其主旨的范围内进行各种变形。
实施例
以下,列举实施例来更具体地说明本发明。本发明并不受以下实施例的限制,当然能够在可适合上述、后述的主旨的范围内适当施加变更来实施,这些均包含于本发明的技术范围内。
<对半导体层的等离子体处理与固定电荷密度的关系性>
评价了绝缘层成膜前的对半导体层表面的等离子体处理与成膜后的绝缘层的固定电荷密度的关系性。
(样品制作)
具体而言,在此实施例中,使用所述等离子体CVD装置对n型的Si基板的表面进行等离子体处理后,通过等离子体CVD法将含氟氮氧化硅膜形成于硅基板表面,然后在大气环境下以250℃进行60分钟热处理,由此制作多个金属-绝缘体-半导体(Metal-Insulator-Semiconductor,MIS)结构的样品。
对于任一样品,对硅基板的等离子体处理均是使用G4基板尺寸(680mm×880mm)的等离子体处理装置,供给包含氮与氧的混合气体作为工艺气体,并在RF功率:0.47W/cm2、成膜时的压力:6Pa、设定温度:200℃的条件下进行。此处,针对所制作的每个样品,变更了等离子体处理的时间 及氮气的流量相对于氮气及氧气的合计流量的比例(0%、96.7%)。另外,对于任一样品,均使用等离子体CVD装置,并使用SiF4、N2、O2及H2的混合气体作为原料气体,且在RF功率:0.71W/cm2、成膜时的压力:6Pa、设定温度:200℃、气体流量:SiF4/N2/O2/H2=200/1160/40/360sccm的条件下进行等离子体处理后的绝缘层的成膜处理。
(固定电荷密度的测定)
接着,对所制作的各样品的固定电荷密度进行测定。具体而言,形成分别与含氟氮氧化硅膜及Si基板接触的含铝的电极,根据CV测定来求出平带偏移量,由此计算出各样品的固定电荷密度。将其结果示于图5中。根据图5可知,使用工艺气体中的氮气的流量的比例为96.7%的混合气体进行了等离子体处理的样品显示出3×1011cm-2以下的良好的固定电荷密度。进而可知,将等离子体处理时间设为15秒~45秒的样品显示出1×1011cm-2以下的良好的固定电荷密度。
产业上的可利用性
根据本发明,可提供一种可在低温工艺中形成固定电荷密度良好的绝缘层的、薄膜晶体管的制造方法。
符号的说明
1:薄膜晶体管
2:基板
3:栅极电极
4:栅极绝缘层
5:半导体层
6:源极电极
7:漏极电极
8:保护层。
Claims (7)
1.一种薄膜晶体管的制造方法,包括:等离子体处理工序,使用包含氮及氧的混合气体作为工艺气体来对半导体层的表面进行等离子体处理;以及
绝缘层形成工序,使用包含SiF4、氮、氧及氢的混合气体作为工艺气体,通过等离子体化学气相沈积法,在所述等离子体处理后的半导体层之上形成绝缘层。
2.根据权利要求1所述的薄膜晶体管的制造方法,其中,所述绝缘层为含氟氮氧化硅膜。
3.根据权利要求1或2所述的薄膜晶体管的制造方法,其中,所述绝缘层的固定电荷密度为3×1011cm-2以下。
4.根据权利要求1至3中任一项所述的薄膜晶体管的制造方法,其中,在所述等离子体处理工序中供给的氮气的流量相对于氮气与氧气的合计流量的比例为90%以上。
5.根据权利要求1至4中任一项所述的薄膜晶体管的制造方法,其中,在所述等离子体处理工序中供给的氮气的流量相对于氮气与氧气的合计流量的比例、和在所述绝缘层形成工序中供给的氮气的流量相对于氮气与氧气的合计流量的比例相同。
6.根据权利要求1至5中任一项所述的薄膜晶体管的制造方法,其中,在300℃以下进行所述等离子体处理工序及所述绝缘层形成工序。
7.根据权利要求1至6中任一项所述的薄膜晶体管的制造方法,其中,所述半导体层包含In-Ga-Zn-O。
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