CN116301159A - Low-temperature-drift bipolar band-gap reference voltage source - Google Patents
Low-temperature-drift bipolar band-gap reference voltage source Download PDFInfo
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Abstract
The invention belongs to the field of analog integrated circuits, and discloses a bipolar band gap reference voltage source with low temperature drift, which comprises a band gap reference module, a temperature compensation module and a direct current bias module; the temperature compensation module is connected with the band gap reference module, and the direct current bias module is connected with the band gap reference module and the temperature compensation module; the band gap reference module is used for generating a band gap reference voltage with first-order compensation; the temperature compensation module is used for generating a high-order PTAT current and compensating a high-order item of a negative temperature coefficient in the band-gap reference voltage through the high-order PTAT current to obtain a band-gap reference voltage with low temperature drift; the direct current bias module is used for generating a first bias current and a second bias current and sending the first bias current and the second bias current to the band gap reference module and the temperature compensation module respectively. The circuit can ensure that the reference voltage output by the band gap reference voltage source is not subject to temperature change under the working states of different temperatures, has the characteristics of low temperature drift and adaptability to bipolar process, and improves the application applicability of the reference voltage source circuit.
Description
Technical Field
The invention belongs to the field of analog integrated circuits, and relates to a bipolar band gap reference voltage source with low temperature drift.
Background
In recent years, with the continuous development and upgrading of electronic products, the performance requirements on integrated circuit chips are increasing. The band gap reference voltage source is used as an important component in digital-to-analog converter, analog-to-digital converter, switching power supply and other systems, has the characteristics of high precision, low temperature drift and stability, and can provide stable voltage for the system, which is not influenced by power supply voltage, working temperature and technological parameters.
The existing band gap reference voltage source uses an N.Vt structure with a negative temperature coefficient of base-emitter voltage VBE superimposed with a positive temperature coefficient, lacks a temperature compensation structure, cannot eliminate the high-order influence of temperature on the output reference voltage, has obvious influence of temperature change on the output reference voltage, and is not beneficial to the model selection design of system level users.
Disclosure of Invention
The invention aims to overcome the defect that the prior band gap reference voltage source cannot eliminate the high-order influence of temperature on the output reference voltage in the prior art, and the output reference voltage is obviously influenced by temperature change, and provides a bipolar band gap reference voltage source with low temperature drift.
In order to achieve the purpose, the invention is realized by adopting the following technical scheme:
a bipolar band gap reference voltage source with low temperature drift comprises a band gap reference module, a temperature compensation module and a direct current bias module; the temperature compensation module is connected with the band gap reference module, and the direct current bias module is connected with the band gap reference module and the temperature compensation module; the band gap reference module is used for generating a band gap reference voltage with first-order compensation; the temperature compensation module is used for generating a high-order PTAT current and compensating a high-order item of a negative temperature coefficient in the band-gap reference voltage through the high-order PTAT current to obtain a band-gap reference voltage with low temperature drift; the direct current bias module is used for generating a first bias current and a second bias current and sending the first bias current and the second bias current to the band gap reference module and the temperature compensation module respectively.
Optionally, the bandgap reference module includes a first transistor Q1, a second transistor Q2, a third transistor Q3, a fourth transistor Q4, and a first resistor R1, a second resistor R2, and a third resistor R3; the first end of the third resistor R3 is provided with a first output node, and the second end of the third resistor R3 is connected with the first end of the second resistor R2; the second end of the second resistor R2 is connected with the emitter of the first transistor Q1 and the emitter of the second transistor Q2; a second output node is arranged on the base electrode of the first transistor Q1 and is connected with the base electrode of the second transistor Q2; the collector of the first transistor Q1 is connected to the collector of the third transistor Q3; the collector of the second transistor Q2 is connected with the collector of the fourth transistor Q4; the base electrode of the third transistor Q3 is connected with the base electrode of the fourth transistor Q4; the base electrode and the collector electrode of the fourth transistor Q4 are short-circuited, and the emitter electrode is connected with the first end of the first resistor R1.
Optionally, an emitter of the third transistor Q3 is grounded; the second end of the first resistor R1 is grounded.
Optionally, the area ratio of the emitter regions of the third transistor Q3 and the fourth transistor Q4 is 1:8.
optionally, the temperature compensation module includes a sixth transistor Q6, a seventh transistor Q7, an eighth transistor Q8, a ninth transistor Q9, a tenth transistor Q10, an eleventh transistor Q11, a fourth resistor R4, a fifth resistor R5, and a sixth resistor R6; an emitter of the sixth transistor Q6 is connected with the first output node, a collector of the sixth transistor Q6 is connected with the first end of the second resistor R2, and a base of the sixth transistor Q7 is connected with a base of the seventh transistor; an emitter of the seventh transistor Q7 is connected with the first output node, and a collector is short-circuited with a base; the collector of the ninth transistor Q9 is connected with the collector of the seventh transistor Q7, the base is connected with the second end of the fifth resistor R5, and the emitter is connected with the first end of the fourth resistor R4; the collector of the eighth transistor Q8 is connected with the first output node, the base is connected with the base of the tenth transistor Q10, and the emitter is connected with the first end of the fourth resistor R4; the collector of the tenth transistor Q10 is short-circuited with the base, and the emitter is connected with the collector of the eleventh transistor Q11; the base and collector of the eleventh transistor Q11 are shorted; the first end of the fifth resistor R5 is connected with the base electrode of the eighth transistor Q8, and the second end of the fifth resistor R6; the second end of the sixth resistor R6 is connected to the emitter of the tenth transistor Q10.
Optionally, the second end of the fourth resistor R4 is grounded; the emitter of the eleventh transistor Q11 is grounded.
Optionally, the first resistor R1, the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, and the sixth resistor R6 are polysilicon resistors.
Optionally, the area ratio of the emitter regions of the sixth transistor Q6 and the seventh transistor Q7 is 1:1, a step of; the area ratio of the emitting areas of the eighth transistor Q8, the ninth transistor Q9, the tenth transistor Q10 and the eleventh transistor Q11 is 1:1:2:2.
optionally, the dc bias module includes a fifth transistor Q5, a first current source I1, a second current source I2, and a third current source I3; the base electrode of the fifth transistor Q5 is connected with the first end of the third current source I3, and the collector electrode is connected with the first output node; a first end of the first current source I1 is connected with a collector electrode of the tenth transistor Q10; the first end of the second current source I2 is connected to the second output node.
Optionally, the emitter of the fifth transistor Q5, the second end of the first current source I1, the second end of the second current source I2, and the second end of the third current source I3 are all connected to the power VCC.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a bipolar band gap reference voltage source with low temperature drift, which is provided with a band gap reference module, a temperature compensation module and a direct current bias module, wherein the band gap reference voltage subjected to first-order compensation is provided by the band gap reference module, high-order PTAT current is provided by the temperature compensation module, and the high-order item of a negative temperature coefficient in the band gap reference voltage is compensated by the high-order PTAT current, so that the band gap reference voltage with low temperature drift is obtained, and the direct current bias is provided for the work of the band gap reference module and the temperature compensation module by the direct current bias module. The bipolar band gap reference voltage source can work in working states with different temperatures, and based on the changed high-order PTAT current generated by the temperature compensation module, the output band gap reference voltage is free from temperature change, has the characteristics of low temperature drift and adaptability to bipolar processes, improves the application applicability of the reference voltage source circuit, can be widely applied to various power supply management and driving chips, and has good application prospect and economic benefit. The defect that the prior band gap reference structure does not contain a temperature compensation structure, so that the influence of temperature on the high order of the output band gap reference voltage cannot be eliminated, the output band gap reference voltage is obviously influenced by temperature change, and the model selection design of a system level user is not facilitated is effectively overcome.
Drawings
FIG. 1 is a schematic diagram of a conventional bandgap reference voltage source.
FIG. 2 is a schematic diagram of a low temperature drift bipolar bandgap reference voltage source according to the present invention.
Fig. 3 is a graph of the reference voltage temperature characteristic of the temperature compensation of the present invention.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The invention is described in further detail below with reference to the attached drawing figures:
referring to fig. 1, in the conventional bandgap reference source voltage source, a base-emitter voltage VBE with a negative temperature coefficient is generally used to superimpose n·vt with a positive temperature coefficient, and a temperature compensation structure is absent, so that the high-order influence of temperature on the output bandgap reference voltage cannot be eliminated, the output bandgap reference voltage is obviously influenced by temperature variation, and the system-level user's model selection design is not facilitated.
Referring to fig. 2, the invention provides a bipolar band gap reference voltage source with low temperature drift, which has the characteristics of simple circuit structure design, low temperature drift, high reliability, adaptability to bipolar process, small chip area and low cost, and improves the application applicability of a reference voltage source circuit.
Specifically, the bipolar band gap reference voltage source with low temperature drift comprises a band gap reference module, a temperature compensation module and a direct current bias module; the temperature compensation module is connected with the band gap reference module, and the direct current bias module is connected with the band gap reference module and the temperature compensation module; the band gap reference module is used for generating a band gap reference voltage with first-order compensation; the temperature compensation module is used for generating a high-order PTAT current and compensating a high-order item of a negative temperature coefficient in the band-gap reference voltage through the high-order PTAT current to obtain a band-gap reference voltage with low temperature drift; the direct current bias module is used for generating a first bias current and a second bias current and sending the first bias current and the second bias current to the band gap reference module and the temperature compensation module respectively.
The band gap reference module comprises a first transistor Q1, a second transistor Q2, a third transistor Q3, a fourth transistor Q4, a first resistor R1, a second resistor R2 and a third resistor R3; the first end of the third resistor R3 is provided with a first output node A, and the second end of the third resistor R3 is connected with the first end of the second resistor R2; the second end of the second resistor R2 is connected with the emitter of the first transistor Q1 and the emitter of the second transistor Q2; a second output node B is arranged on the base electrode of the first transistor Q1 and is connected with the base electrode of the second transistor Q2; the collector of the first transistor Q1 is connected to the collector of the third transistor Q3; the collector of the second transistor Q2 is connected with the collector of the fourth transistor Q4; the base electrode of the third transistor Q3 is connected with the base electrode of the fourth transistor Q4; the base electrode and the collector electrode of the fourth transistor Q4 are short-circuited, and the emitter electrode is connected with the first end of the first resistor R1.
The bandgap reference module generates a temperature-positively correlated current (i.e., PTAT current) using the first transistor Q1, the second transistor Q2, the third transistor Q3, the fourth transistor Q4, and the first resistor R1, generates a PTAT voltage using the second resistor R2 and the third resistor R3, and generates a first-order compensated bandgap reference voltage by superimposing the PTAT voltage using the base-emitter voltage VBE of the first transistor Q1.
The temperature compensation module comprises a sixth transistor Q6, a seventh transistor Q7, an eighth transistor Q8, a ninth transistor Q9, a tenth transistor Q10, an eleventh transistor Q11, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6; the emitter of the sixth transistor Q6 is connected with the first output node A, the collector is connected with the first end of the second resistor R2, and the base is connected with the base of the seventh transistor Q7; an emitter of the seventh transistor Q7 is connected with the first output node A, and a collector is in short circuit with a base; the collector of the ninth transistor Q9 is connected with the collector of the seventh transistor Q7, the base is connected with the second end of the fifth resistor R5, and the emitter is connected with the first end of the fourth resistor R4; the collector of the eighth transistor Q8 is connected with the first output node A, the base is connected with the base of the tenth transistor Q10, and the emitter is connected with the first end of the fourth resistor R4; the collector of the tenth transistor Q10 is short-circuited with the base, and the emitter is connected with the collector of the eleventh transistor Q11; the base and collector of the eleventh transistor Q11 are shorted; the first end of the fifth resistor R5 is connected with the base electrode of the eighth transistor Q8, and the second end of the fifth resistor R6; the second end of the sixth resistor R6 is connected to the emitter of the tenth transistor Q10.
The temperature compensation module generates a high-order PTAT current by using the eighth transistor Q8, the ninth transistor Q9, the tenth transistor Q10, the eleventh transistor Q11, the fourth resistor R4, the fifth resistor R5 and the sixth resistor R6, and the high-order PTAT current acts on the third resistor R3 through the mirror images of the sixth transistor Q6 and the seventh transistor Q7 to compensate the high-order term of the negative temperature coefficient in the base-emitter voltage VBE of the second transistor Q2, so that the band gap reference voltage output after compensation obtains the low-temperature drift characteristic.
The direct current bias module comprises a fifth transistor Q5, a first current source I1, a second current source I2 and a third current source I3; the base electrode of the fifth transistor Q5 is connected with the first end of the third current source I3, and the collector electrode is connected with the first output node A; a first end of the first current source I1 is connected with a collector electrode of the tenth transistor Q10; the first terminal of the second current source I2 is connected to the second output node B.
The second current source I2 and the third current source I3 in the dc bias module provide bias currents for the fifth transistor Q5, the first transistor Q1 and the second transistor Q2. The third current source I3 provides a dc bias for the temperature compensation module, and the fifth transistor Q5 provides a dc bias for the bandgap reference module.
When the transistor is used, the emitter of the third transistor Q3 is grounded; the second end of the first resistor R1 is grounded, and the second end of the fourth resistor R4 is grounded; the emitter of the eleventh transistor Q11 is grounded, and the emitter of the fifth transistor Q5, the second terminal of the first current source I1, the second terminal of the second current source I2, and the second terminal of the third current source I3 are all connected to the power supply VCC.
In summary, for the defect that the prior bandgap reference structure does not contain a temperature compensation structure, the influence of temperature on the higher order of the output reference voltage cannot be eliminated, the output reference voltage is obviously influenced by temperature change, and the design selection of system level users is not facilitated, the temperature compensation structure adopted by the invention can lead the bandgap reference voltage output by the bandgap reference voltage source not to be influenced by temperature change through generating changed higher order PTAT compensation current under the working state of different temperatures, has the characteristics of low temperature drift and adaptation to bipolar process, improves the application applicability of the bandgap reference voltage source circuit, can be widely applied to various power supply management and driving chips, and has good application prospect and economic benefit.
Alternatively, it is assumed that the ratio of the emitter area of the third transistor Q3 to the emitter area of the fourth transistor Q4 is 1: n, the base-emitter voltage difference DeltaV of the third transistor Q3 and the fourth transistor Q4 BE The relation is: deltaV BE ＝V BE3 -V BE4 ＝V T lnN, where V T Is a thermal voltage, proportional to the temperature T,
ΔV BE acting on a first resistor R1 to generate a PTAT current I PTAT ：
I is twice the current flowing through the first resistor R1 and the second resistor R2 PTAT 。
The bandgap reference voltage relationship is as follows:
optionally, in this embodiment, N is 8, the first resistor R1 is a polysilicon resistor with a resistance value of 52kΩ, the second resistor R2 is a polysilicon resistor with a resistance value of 138kΩ, and the third resistor R3 is a polysilicon resistor with a resistance value of 98kΩ.
Alternatively, it is assumed that the area ratio of the emitter regions of the sixth transistor Q6 and the seventh transistor Q7 is 1:1, a step of; the area ratio of the emitting areas of the eighth transistor Q8, the ninth transistor Q9, the tenth transistor Q10 and the eleventh transistor Q11 is 1:1:2:2.
when the circuit operating temperature is low, the base-emitter voltage of the tenth transistor Q10 is less than the on-voltage of the transistor, in the off-state. The bias current I1 is connected to ground via the fifth resistor R5, the sixth resistor R6 and the eleventh transistor Q11. The collector currents of the ninth transistor Q9 and the eighth transistor Q8 satisfy:
the collector currents flowing through the eleventh transistor Q11, the ninth transistor Q9, and the eighth transistor Q8 satisfy: />
As the circuit operating temperature increases, a fifth resistor R5 andthe current in the sixth resistor R6 gradually increases while the turn-on voltage of the tenth transistor Q10 decreases, and the tenth transistor 10 will be turned on. The bias current I1 is passed through the tenth transistor 10 and the eleventh transistor Q11 to ground, so that the current flowing through the fifth resistor R5 and the sixth resistor R6 decreases. The collector current relationship of the eleventh transistor Q11, the ninth transistor Q9, and the eighth transistor Q8 still satisfies:
the collector current relationship of the ninth transistor Q9 and the eighth transistor Q8 satisfies: />
From the above, it can be seen that the compensation current I C9 Is a positive temperature coefficient current with a higher order term lnT. The reference voltage value output by the compensated circuit meets the following conditions:
in the present embodiment, the fourth resistor R4 is a polysilicon resistor having a resistance value of 90kΩ, the fifth resistor R5 is a polysilicon resistor having a resistance value of 19.5kΩ, and the sixth resistor R6 is a polysilicon resistor having a resistance value of 212kΩ.
Referring to fig. 3, the simulation result of the circuit application of the bipolar bandgap reference voltage source with low temperature drift in this embodiment shows that the output voltage simulation value of the bandgap reference is 1.202V, the variation amplitude of the output reference voltage along with the temperature variation is 3.052mV, the temperature drift is 14ppm/°c, and the circuit has good temperature characteristics when the circuit is subjected to temperature scanning in the temperature range of-55 ℃ -125 ℃.
From the above description, it is known that: the temperature compensation structure adopted by the bipolar band gap reference voltage source with low temperature drift can enable the circuit to generate variable high-order PTAT compensation current under the working states of different temperatures, so that the reference voltage output by the band gap reference voltage source is not subject to temperature variation, the bipolar band gap reference voltage source has the characteristics of low temperature drift and adaptation to bipolar technology, the application applicability of the reference voltage source circuit is improved, the bipolar band gap reference voltage source circuit can be widely applied to various power supply management and driving chips, and the bipolar band gap reference voltage source circuit has good application prospect and economic benefit.
The above is only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited by this, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (10)
1. The bipolar band gap reference voltage source with low temperature drift is characterized by comprising a band gap reference module, a temperature compensation module and a direct current bias module; the temperature compensation module is connected with the band gap reference module, and the direct current bias module is connected with the band gap reference module and the temperature compensation module;
the band gap reference module is used for generating a band gap reference voltage with first-order compensation;
the temperature compensation module is used for generating a high-order PTAT current and compensating a high-order item of a negative temperature coefficient in the band-gap reference voltage through the high-order PTAT current to obtain a band-gap reference voltage with low temperature drift;
the direct current bias module is used for generating a first bias current and a second bias current and sending the first bias current and the second bias current to the band gap reference module and the temperature compensation module respectively.
2. The low temperature drift bipolar bandgap reference voltage source of claim 1, wherein said bandgap reference module comprises a first transistor Q1, a second transistor Q2, a third transistor Q3, a fourth transistor Q4 and a first resistor R1, a second resistor R2 and a third resistor R3; the first end of the third resistor R3 is provided with a first output node, and the second end of the third resistor R3 is connected with the first end of the second resistor R2; the second end of the second resistor R2 is connected with the emitter of the first transistor Q1 and the emitter of the second transistor Q2; a second output node is arranged on the base electrode of the first transistor Q1 and is connected with the base electrode of the second transistor Q2; the collector of the first transistor Q1 is connected to the collector of the third transistor Q3; the collector of the second transistor Q2 is connected with the collector of the fourth transistor Q4; the base electrode of the third transistor Q3 is connected with the base electrode of the fourth transistor Q4; the base electrode and the collector electrode of the fourth transistor Q4 are short-circuited, and the emitter electrode is connected with the first end of the first resistor R1.
3. The low temperature floating bipolar bandgap reference voltage source of claim 2, wherein the emitter of said third transistor Q3 is grounded; the second end of the first resistor R1 is grounded.
4. The low temperature drift bipolar bandgap reference voltage source of claim 2, wherein said third and fourth transistors Q3 and Q4 have an emitter area ratio of 1:8.
5. the low temperature drift bipolar bandgap reference voltage source of claim 2, wherein said temperature compensation module comprises a sixth transistor Q6, a seventh transistor Q7, an eighth transistor Q8, a ninth transistor Q9, a tenth transistor Q10, an eleventh transistor Q11, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6; an emitter of the sixth transistor Q6 is connected with the first output node, a collector of the sixth transistor Q6 is connected with the first end of the second resistor R2, and a base of the sixth transistor Q7 is connected with a base of the seventh transistor; an emitter of the seventh transistor Q7 is connected with the first output node, and a collector is short-circuited with a base; the collector of the ninth transistor Q9 is connected with the collector of the seventh transistor Q7, the base is connected with the second end of the fifth resistor R5, and the emitter is connected with the first end of the fourth resistor R4; the collector of the eighth transistor Q8 is connected with the first output node, the base is connected with the base of the tenth transistor Q10, and the emitter is connected with the first end of the fourth resistor R4; the collector of the tenth transistor Q10 is short-circuited with the base, and the emitter is connected with the collector of the eleventh transistor Q11; the base and collector of the eleventh transistor Q11 are shorted; the first end of the fifth resistor R5 is connected with the base electrode of the eighth transistor Q8, and the second end of the fifth resistor R6; the second end of the sixth resistor R6 is connected to the emitter of the tenth transistor Q10.
6. The low temperature drift bipolar bandgap reference voltage source of claim 5, wherein said fourth resistor R4 has a second terminal connected to ground; the emitter of the eleventh transistor Q11 is grounded.
7. The low temperature drift bipolar bandgap reference voltage source of claim 5, wherein said first resistor R1, second resistor R2, third resistor R3, fourth resistor R4, fifth resistor R5 and sixth resistor R6 are all polysilicon resistors.
8. The low temperature floating bipolar bandgap reference voltage source of claim 5, wherein said sixth transistor Q6 and seventh transistor Q7 have an emitter area ratio of 1:1, a step of; the area ratio of the emitting areas of the eighth transistor Q8, the ninth transistor Q9, the tenth transistor Q10 and the eleventh transistor Q11 is 1:1:2:2.
9. the low temperature drift bipolar bandgap reference voltage source of claim 5, wherein said dc bias module comprises a fifth transistor Q5, a first current source I1, a second current source I2 and a third current source I3; the base electrode of the fifth transistor Q5 is connected with the first end of the third current source I3, and the collector electrode is connected with the first output node; a first end of the first current source I1 is connected with a collector electrode of the tenth transistor Q10; the first end of the second current source I2 is connected to the second output node.
10. The low temperature drift bipolar bandgap reference voltage source of claim 9, wherein said emitter of said fifth transistor Q5, said second terminal of said first current source I1, said second terminal of said second current source I2 and said second terminal of said third current source I3 are all connected to a power supply VCC.
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| CN117519403A (en) * | 2024-01-05 | 2024-02-06 | 深圳市山海半导体科技有限公司 | Band gap reference circuit and electronic equipment |
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| CN117519403A (en) * | 2024-01-05 | 2024-02-06 | 深圳市山海半导体科技有限公司 | Band gap reference circuit and electronic equipment |
| CN117519403B (en) * | 2024-01-05 | 2024-04-09 | 深圳市山海半导体科技有限公司 | Band gap reference circuit and electronic equipment |
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