CN112034920B - Voltage generator - Google Patents
Voltage generator Download PDFInfo
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- CN112034920B CN112034920B CN202010500336.XA CN202010500336A CN112034920B CN 112034920 B CN112034920 B CN 112034920B CN 202010500336 A CN202010500336 A CN 202010500336A CN 112034920 B CN112034920 B CN 112034920B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a voltage generator, comprising a bipolar junction transistor with a base emitter forward bias voltage of a negative temperature coefficient; a positive temperature coefficient current generating circuit, which generates a reference positive temperature coefficient current and multiplies the reference positive temperature coefficient current by a multiplying factor to form a positive temperature coefficient current; an error amplifier; an output stage switch assembly, providing an output voltage at an output end; and a first impedance unit coupled between the output terminal and the base of the BJT, and a second impedance unit coupled to a control terminal, the base of the BJT, and the PTC current.
Description
Technical Field
The present invention relates to a voltage generator, and more particularly, to a voltage generator with temperature compensation and current output capabilities.
Background
In the prior art of circuit design, a Voltage Generator (Voltage Generator or Voltage Regulator) is used to generate an output Voltage to supply power to a load. Generally, the voltage generator generates an output voltage according to a reference voltage to supply power to a load, and since the circuit elements are susceptible to temperature, the reference voltage is also susceptible to temperature, which in turn causes the voltage generator to fail to provide a stable output voltage. In order to ensure that the voltage generator can be used as a stable voltage source, the voltage generator must use a stable reference voltage that is not affected by temperature, and the prior art has a band gap (gap) reference voltage generation circuit connected to the conventional voltage generator to generate a reference voltage that is relatively unaffected by temperature through temperature compensation. However, this results in that the voltage generator must be additionally equipped with a bandgap reference voltage generating circuit, so that the overall circuit cost and size are increased. Moreover, the reference voltage value generated by the bandgap reference voltage generation circuit is not easily adjusted, which makes the application flexibility of the voltage generator low. Thus, there is a real need for improvement in the art.
Disclosure of Invention
Therefore, it is a primary objective of the claimed invention to provide a voltage generator with temperature compensation and current output capabilities to solve the above-mentioned problems.
The embodiment of the invention provides a voltage generator, which comprises a bipolar junction transistor and a voltage generator, wherein the bipolar junction transistor is provided with a base emitter forward bias voltage with a negative temperature coefficient; a positive temperature coefficient current generating circuit coupled to the base of the bipolar junction transistor, the positive temperature coefficient current generating circuit generating a reference positive temperature coefficient current and multiplying the reference positive temperature coefficient current by a multiplying factor to form a positive temperature coefficient current; an error amplifier coupled to the collector of the BJT; an output stage switch assembly, coupled to the error amplifier and an output terminal, for providing an output voltage at the output terminal; and a first impedance unit coupled between the output terminal and the base of the BJT, and a second impedance unit coupled between the control terminal, the base of the BJT, and the PTC current.
Drawings
Fig. 1 is a schematic diagram of a voltage generator according to an embodiment of the invention.
Fig. 2 is a schematic diagram of a temperature and an input voltage of the voltage generator according to the embodiment of the invention.
FIG. 3 is a schematic diagram of output voltages corresponding to different input voltages when the voltage generator according to the embodiment of the invention is applied.
Wherein the reference numerals are as follows:
10 voltage generator
102 positive temperature coefficient current generating circuit
104 output stage switch assembly
1022 current mirror
1024 buffer amplifier
A error amplifier
I1 first Current
I2 second Current
IBBase current
ICCollector current
Iin collector current
Iout collector current
IPTATReference positive temperature coefficient current
K*IPTATPositive temperature coefficient current
K. Multiplying power of N
Control terminal of N1
Output terminal of N2
Q1 transistor
Q2 second BJT
Q3 third bipolar junction transistor
Vcc input voltage
Vout output voltage
VBE1Base emitter forward bias
Z1First impedance unit
Z2Second impedance unit
Z3Third impedance unit
ΔVBEThird impedance drop
Detailed Description
Referring to fig. 1, fig. 1 is a schematic diagram of a voltage generator 10 according to an embodiment of the invention. The voltage generator 10 comprises a transistor Q1, a positive temperature coefficient current K IPTATAn error amplifier A, an output stage switch component 104, a first impedance unit Z1And a second impedance unit Z2. The voltage generator 10 is used to provide a stable output voltage Vout as a voltage source for internal components of an Integrated Circuit (IC) chip.
In the embodiment of fig. 1, the voltage generator 10 can be powered by a system power supply, which includes a first terminal and a second terminal, where the voltage between the first terminal and the second terminal is an input voltage Vcc. Transistor Q1 is a Bipolar Junction Transistor (BJT) for providing a base emitter forward bias voltage V with a negative temperature coefficientBE1. Positive temperature coefficient current K IPTATA reference PTC current I generated by a PTC current generating circuit 102PTATMultiplying by K times, one end of the ptc current generating circuit 102 is coupled to a control terminal N1, and the control terminal N1 is coupled to the base of the transistor Q1. The error amplifier a is coupled between the collector of the transistor Q1 and the output stage switching element 104. Output stage switch assembly 104 connectionAn output terminal N2 for outputting a collector current I according to the transistor Q1CAnd an error amplifier a to provide an output voltage Vout at the output terminal N2. First impedance unit Z1The second impedance unit Z2 is coupled between the output terminal N2 and the control terminal N1, and the control terminal N1.
In the present embodiment, the transistor Q1 is an NPN-type bjt, and the first impedance unit Z1And a second impedance unit Z2Respectively, a resistor or other impedance element, and the transistor Q1 is not limited to the NPN bjt of the embodiment of fig. 1, and PNP bjt is also suitable for use in the present invention.
In detail, in the present embodiment, the ptc current generating circuit 102 includes a current mirror 1022, the current mirror 1022 is respectively coupled to a collector of a second bjt Q2 and a collector of a third bjt Q3, so that collector currents Iout and Iin of the second and third bjts Q2 and Q3 are the same, wherein an emitter current output of the second bjt Q2 is used as a reference ptc current IPTAT(ii) a The emitter of the third BJT Q3 is coupled to a third impedance unit Z3Third impedance unit Z3Or may be a resistor or other impedance unit. The area of the third bjt Q3 is N times the area of the second bjt Q2. A buffer amplifier 1024 (e.g., a voltage follower) is coupled between the bases of the second and third bjts Q2, Q3 and the collector of the second bjt Q2 for compensating and ensuring that the collector currents Iout, Iin of the second and third bjts Q2, Q3 are the same, but the buffer amplifier 1024 may be replaced or omitted, and the invention is not limited thereto.
Negative temperature coefficient base-emitter forward bias voltage V provided by transistor Q1BE1And a reference PTC current I generated by the PTC current generating circuit 102PTATCompensate each other, so that the voltage generator 10 of the embodiment of the present invention can generate the voltage which is not easily affected by temperatureThe voltage Vout is output.
It is noted that the PTC current K IPTATFor reference to positive temperature coefficient current IPTATK times and the value of K can be designed to meet the user's requirements, wherein the reference ptc current I is set toPTATThe multiplication by K times can be accomplished by using current mirrors or various current conversion circuits, which is not further described. When the polarity of the error amplifier a is positive, the output stage switch element 104 is an N-type metal-oxide-semiconductor field effect transistor (NMOSFET) or an NPN-type bipolar junction transistor; conversely, when the polarity of the error amplifier A is negative, the output stage switch device 104 is a P-type metal-oxide-semiconductor field effect transistor (PMOSFET) or a PNP-type BJT. In addition, in the embodiment, the second bjt Q2 and the third bjt Q3 in fig. 1 are NPN bjts, but the invention is not limited thereto, and PNP bjts are also applicable to the invention.
To facilitate the detailed description of the voltage generator 10 of the embodiment of the present invention capable of generating the output voltage Vout that is not easily affected by temperature, the first, second and third impedance units Z in the embodiment1、Z2、Z3Illustrated as a resistor, and a first, a second and a third impedance unit Z1、Z2、Z3Respectively, is represented as Z1、Z2、Z3. As shown in FIG. 1, the output voltage Vout is the forward bias voltage V of the base-emitter of the transistor Q1BE1And then flows through the second impedance unit Z2A second current I2 and a resistance value Z2Product of (V), i.e. Vout ═ VBE1+Z2*I2...(1)。
Wherein, the second current I2 flows through the first impedance unit Z1A first current I1, a positive temperature coefficient current K IPTATAnd a base current I of the transistor Q1BI2 ═ I1+ IB+K*IPTAT...(2)。
Therefore, after the formula (2) is brought into the formula (1), the output voltage Vout can be rewritten as: Vout-VBE1+Z2*(I1+IB+K*IPTAT)...(3)
Collector current I of transistor Q1C＝β*IBSince the amplification parameter β of the conventional BJT is usually 50 times or more, the base current I is increasedBSmaller, e.g., often on the order of nanoamperes (nA). Thus, the base current I of the transistor Q1BBecause the magnitude is much smaller than the first current I1 and the positive temperature coefficient current K IPTATAnd can be ignored. On the other hand, since the first current I1 is equal to the forward bias V of the base emitterBE1Divided by the resistance value Z1And is referenced to a positive temperature coefficient current IPTATEqual to the third impedance unit Z3Cross voltage Δ V ofBEDivided by the resistance value Z3. In this case, the base current I in the neglect formula (3)BAnd then can be rewritten as:
since the areas of the second bjt Q2 and the third bjt Q3 are not the same, the area of the third bjt Q3 is N times the area of the second bjt Q2. Thus the third impedance unit Z3Cross voltage Δ V ofBEWill satisfy the following formula, wherein VTIs a thermal voltage (thermal voltage).
ΔVBE＝ln(N)×VT...(5)
Thus, combining the above formulas (4) and (5) yields the following results:
in the formula (6), the base emitter is forward biased by V due to the intrinsic characteristics of the bipolar junction transistorBE1Having a negative temperature coefficient, while the thermal voltage VTWith a positive temperature coefficient, in general, the relationship between the two and the temperature can be expressed as follows, where K is the temperature unit:
in this way, in order to make the output voltage Vout in the equation (6) not affected by the temperature, the conditions in the equation (6) are further defined as follows:
that is, in the case where equation (8) is satisfied, the temperature coefficient of the output voltage Vout will be close to zero. Thus, as can be seen from equation (6), the first impedance unit Z is adjusted1A second impedance unit Z2And a third impedance unit Z3Resistance value Z of1、Z2、Z3The multiplying power K and the multiplying power N can be used to adjust the output voltage Vout at will, and the output voltage Vout is kept not to be affected by the temperature under the condition that the formula (8) is satisfied.
Therefore, the voltage generator 10 of the embodiment of the present invention contributes the ptc current K × IPTATAnd the transistor Q1 biased forward with respect to the base emitter of negative temperature coefficient compensate each other, so that the voltage generator 10 has the effect of temperature compensation to output the output voltage Vout which is not easily affected by temperature. In addition, the output voltage Vout generated at the output terminal N2 by the voltage generator 10 via the error amplifier a and the output stage switch element 104 has a current output capability (sourcing capacity), which can be used as a voltage source for the internal components of the IC chip.
The following is an example of how embodiments of the present invention may be designed for practical use. To design a voltage generator 10 providing an output voltage Vout of 5 volts at 27 degrees Celsius, assume that at 27 degrees Celsius and a bias current (bias current) of transistor Q1 of 1 microampere (μ A), the base-emitter forward bias voltage V is appliedBE10.65 volts and beta is a factor of 50. First, a first stepThe bias current of the output stage is set to be larger than the bias current 1 muA of the transistor Q1, so as to further reduce the base current I of the transistor Q1BThus, setting the first current I1 to 10 μ a yields Z1＝0.65V/10μA＝65Kohm。
Next, the area of the third bjt Q3 needs to be N times the area of the second bjt Q2, and in order to reduce the process drift, the second bjt Q2 and the third bjt Q3 are preferably designed to have a geometric symmetry relationship, in this example, N is set to 8, so that the second and third bjts Q2 and Q3 can form a symmetrical structure in the circuit layout. In addition, a positive temperature coefficient current I will be referencedPTATSet to 2 μ a, one can obtain:
finally, in order to make the output voltage Vout less susceptible to temperature, the resistance value Z is set1、Z3Is applied to the formula (8) to obtain Z2224Kohm, K5.17 times. Thus, the first impedance unit Z is designed properly1A second impedance unit Z2And a third impedance unit Z3The output voltage Vout can be adjusted at will by the multiplying power K and the multiplying power N, and then the stable output voltage Vout which is not influenced by temperature is obtained.
When the voltage generator has a negative temperature coefficient, then the resulting curve should decrease as the temperature increases; conversely, when the voltage generator has a positive temperature coefficient, the resulting curve should rise as the temperature rises. Referring to fig. 2, fig. 2 is a schematic diagram illustrating the temperature and the input voltage of the voltage generator 10 applied to an integrated circuit chip according to an embodiment of the present invention. In fig. 2, the temperature (celsius) of the application environment is shown on the X-axis, and the output voltage (volts) is shown on the Y-axis. When the voltage generator 10 of the embodiment of the invention is actually used to provide the 5V output voltage according to the design parameters, the output voltages at different temperatures (c-40 to c-120) are about between 4.8V to 5.08V, and the output voltage does not continuously increase or decrease with the temperature increase, that is, the voltage generator 10 of the embodiment of the invention does have the effect of temperature compensation on the output voltage.
On the other hand, fig. 3 is a schematic diagram of output voltages corresponding to different input voltages when the voltage generator 10 according to the embodiment of the invention is applied to an integrated circuit chip. In fig. 3, the input voltage (volts) is shown on the X-axis and the output voltage (volts) is shown on the Y-axis, and the simulation results of the transistors under different process drift conditions are shown in fig. 3. It can be calculated from fig. 3 that when the input voltage of the voltage generator 10 changes, the deviation of the output voltage is only about 70mV, and the Power Supply Rejection Ratio (PSRR) can reach about 80 dB. And the simulation results were quite excellent for FF (fast NMOS and fast PMOS), FS (fast NMOS and slow PMOS), TT (typical NMOS and typical PMOS), SF (slow NMOS and fast PMOS), or SS (slow NMOS and slow PMOS). That is, the voltage generator 10 of the embodiment of the invention can be used as a Low-dropout regulator (LDO) component to supply power to the internal components of the chip, and also has a temperature compensation function, so as to provide stable output voltage under different temperature conditions.
In summary, the embodiments of the present invention provide a voltage generator, which compensates for each other by the bias voltages of the positive temperature coefficient current and the negative temperature coefficient, so as to provide temperature compensation and output an output voltage that is not easily affected by temperature. In addition, the voltage generator provided by the embodiment of the invention has current output capability and is used as a stable voltage source of an IC chip internal component, and an energy gap reference voltage generating circuit is not required to be additionally arranged, so that the cost and the volume of the whole circuit are effectively reduced.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A voltage generator, comprising:
a bipolar junction transistor having a negative temperature coefficient base emitter forward bias;
a positive temperature coefficient current generating circuit, one end of the positive temperature coefficient current generating circuit is coupled with a control end, the control end is coupled with the base electrode of the bipolar junction transistor, the positive temperature coefficient current generating circuit generates a reference positive temperature coefficient current, and the reference positive temperature coefficient current is multiplied by a multiplying factor to form a positive temperature coefficient current;
an error amplifier coupled to the collector of the BJT;
an output stage switch assembly, coupled to the error amplifier and an output terminal, for providing an output voltage at the output terminal; and
the first impedance unit is coupled between the output end and the base of the bipolar junction type transistor, and the second impedance unit is coupled to the control end.
2. The voltage generator as claimed in claim 1, wherein a second current flowing through the second impedance unit is a sum of a first current flowing through the first impedance unit, the PTC current and a base current of the BJT.
3. The voltage generator of claim 1, wherein the positive temperature coefficient current generating circuit comprises:
a current mirror;
a second BJT having a collector coupled to one end of the current mirror; and
a third bipolar junction transistor, a collector of the third bipolar junction transistor being coupled to the other end of the current mirror;
wherein an emitter current of the second bjt is outputted as the reference positive temperature coefficient current, an emitter of the third bjt is coupled to a third impedance unit, an area of the third bjt is N times an area of the second bjt, and a base of the second bjt and a base of the third bjt are coupled to a collector of the second bjt.
4. The voltage generator of claim 3, wherein the PTC current is K times the reference PTC current, and the first impedance unit, the second impedance unit and the third impedance unit each have a resistance value of Z1、Z2、Z3And the following conditions are satisfied:
wherein, VBE1Is forward biased with respect to the base emitter of the bipolar junction transistor, VTIs the thermal voltage of the third bjt, T is the temperature, and N is the area of the third bjt and the area factor of the second bjt.
5. The voltage generator as claimed in claim 3, wherein the PTC current generating circuit further comprises a buffer amplifier having a buffer input terminal and a buffer output terminal, the buffer output terminal is coupled to the base of the second BJT, and the buffer input terminal is coupled between the collector and the base of the second BJT.
6. The voltage generator of claim 3, wherein collector currents of a second BJT and the third BJT are the same.
7. The voltage generator of claim 2, wherein the bjt is operated at a bias current, and the first current is greater than the bias current.
8. The voltage generator of claim 1, wherein the output stage switch element is an N-type metal-oxide-semiconductor field effect transistor (NMOSFET) or an NPN-type bipolar junction transistor when a polarity of the error amplifier is positive; when the polarity of the error amplifier is negative, the output stage switch element is a P-type metal-oxide-semiconductor field effect transistor (PMOSFET) or a PNP-type bipolar junction transistor.
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| US201962856758P | 2019-06-04 | 2019-06-04 | |
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| TWI803969B (en) * | 2021-09-08 | 2023-06-01 | 大陸商常州欣盛半導體技術股份有限公司 | Power-up circuit with temperature compensation |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101470458A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | Reference circuit of band-gap voltage reference |
| CN101630176A (en) * | 2009-07-28 | 2010-01-20 | 中国科学院微电子研究所 | Low-voltage complementary metal-oxide-semiconductor transistor (CMOS) band gap reference voltage source |
| JP2010039648A (en) * | 2008-08-01 | 2010-02-18 | Sony Corp | Reference voltage generating circuit and semiconductor element having the same |
| CN102419609A (en) * | 2010-09-27 | 2012-04-18 | 联咏科技股份有限公司 | Reference voltage and reference current generating circuit and method |
| CN102566633A (en) * | 2010-12-07 | 2012-07-11 | 华邦电子股份有限公司 | Low-voltage-difference voltage stabilizer |
| CN103677055A (en) * | 2012-09-24 | 2014-03-26 | 联咏科技股份有限公司 | Band gap reference circuit and double-output self-reference voltage stabilizer thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6045148B2 (en) * | 2011-12-15 | 2016-12-14 | エスアイアイ・セミコンダクタ株式会社 | Reference current generation circuit and reference voltage generation circuit |
| US9019727B2 (en) * | 2012-07-18 | 2015-04-28 | Linear Technology Corporation | Temperature compensation of output diode in an isolated flyback converter |
| CN104345765B (en) * | 2013-08-05 | 2016-01-20 | 日月光半导体制造股份有限公司 | Band gap generating circuit from reference voltage and the electronic system using it |
| US9715245B2 (en) * | 2015-01-20 | 2017-07-25 | Taiwan Semiconductor Manufacturing Company Limited | Circuit for generating an output voltage and method for setting an output voltage of a low dropout regulator |
| US9898029B2 (en) * | 2015-12-15 | 2018-02-20 | Qualcomm Incorporated | Temperature-compensated reference voltage generator that impresses controlled voltages across resistors |
| US10037046B1 (en) * | 2017-03-16 | 2018-07-31 | Semiconductor Components Industries, Llc | Regulating temperature-compensated output voltage |
| CN109270978B (en) * | 2017-07-18 | 2020-12-22 | 华润微电子（重庆）有限公司 | Low dropout linear voltage stabilizing circuit, voltage regulation rate compensation unit and method |
| CN109062309B (en) * | 2018-10-26 | 2019-08-02 | 清华大学 | A kind of low-dropout linear voltage adjuster |
-
2020
- 2020-06-04 CN CN202010500336.XA patent/CN112034920B/en active Active
- 2020-06-04 TW TW109118796A patent/TWI716323B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101470458A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | Reference circuit of band-gap voltage reference |
| JP2010039648A (en) * | 2008-08-01 | 2010-02-18 | Sony Corp | Reference voltage generating circuit and semiconductor element having the same |
| CN101630176A (en) * | 2009-07-28 | 2010-01-20 | 中国科学院微电子研究所 | Low-voltage complementary metal-oxide-semiconductor transistor (CMOS) band gap reference voltage source |
| CN102419609A (en) * | 2010-09-27 | 2012-04-18 | 联咏科技股份有限公司 | Reference voltage and reference current generating circuit and method |
| CN102566633A (en) * | 2010-12-07 | 2012-07-11 | 华邦电子股份有限公司 | Low-voltage-difference voltage stabilizer |
| CN103677055A (en) * | 2012-09-24 | 2014-03-26 | 联咏科技股份有限公司 | Band gap reference circuit and double-output self-reference voltage stabilizer thereof |
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| TWI716323B (en) | 2021-01-11 |
| CN112034920A (en) | 2020-12-04 |
| TW202046041A (en) | 2020-12-16 |
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