CN116234852A - 包含3官能化合物的反应生成物的抗蚀剂下层膜形成用组合物 - Google Patents

包含3官能化合物的反应生成物的抗蚀剂下层膜形成用组合物 Download PDF

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Publication number
CN116234852A
CN116234852A CN202180065966.1A CN202180065966A CN116234852A CN 116234852 A CN116234852 A CN 116234852A CN 202180065966 A CN202180065966 A CN 202180065966A CN 116234852 A CN116234852 A CN 116234852A
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CN
China
Prior art keywords
compound
group
underlayer film
resist underlayer
resist
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Pending
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CN202180065966.1A
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English (en)
Chinese (zh)
Inventor
清水祥
田村护
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Nissan Chemical Corp
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Nissan Chemical Corp
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Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of CN116234852A publication Critical patent/CN116234852A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/14—Polycondensates modified by chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/3236—Heterocylic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32—Epoxy compounds containing three or more epoxy groups
    • C08G59/3236—Heterocylic compounds
    • C08G59/3245—Heterocylic compounds containing only nitrogen as a heteroatom
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
CN202180065966.1A 2020-10-07 2021-10-06 包含3官能化合物的反应生成物的抗蚀剂下层膜形成用组合物 Pending CN116234852A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-169864 2020-10-07
JP2020169864 2020-10-07
PCT/JP2021/036900 WO2022075339A1 (ja) 2020-10-07 2021-10-06 ３官能化合物の反応生成物を含むレジスト下層膜形成組成物

Publications (1)

Publication Number Publication Date
CN116234852A true CN116234852A (zh) 2023-06-06

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CN202180065966.1A Pending CN116234852A (zh) 2020-10-07 2021-10-06 包含3官能化合物的反应生成物的抗蚀剂下层膜形成用组合物

Country Status (6)

Country Link
US (1) US20240004295A1 (https=)
JP (1) JPWO2022075339A1 (https=)
KR (1) KR102927084B1 (https=)
CN (1) CN116234852A (https=)
TW (1) TWI902926B (https=)
WO (1) WO2022075339A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250165348A (ko) 2023-03-30 2025-11-25 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성용 조성물

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005321752A (ja) * 2004-04-09 2005-11-17 Nissan Chem Ind Ltd イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物
TW201019049A (en) * 2008-11-12 2010-05-16 Nissan Chemical Ind Ltd Resist underlayer coating film forming composition and patterning method by using the same
JP2011527460A (ja) * 2008-07-08 2011-10-27 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション 反射防止コーティング組成物
CN103838086A (zh) * 2005-09-27 2014-06-04 日产化学工业株式会社 含有异氰脲酸化合物与苯甲酸化合物的反应生成物的形成防反射膜的组合物
CN111670410A (zh) * 2018-02-02 2020-09-15 日产化学株式会社 具有二硫醚结构的抗蚀剂下层膜形成用组合物

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US3600217A (en) * 1968-03-04 1971-08-17 Fotochem Werke Berlin Veb Process for pretreating polyester film support for the coating with photographic emulsions
JPH0286624A (ja) 1988-07-12 1990-03-27 Hoechst Celanese Corp 高分子量ポリイミドとその製法および成形品
US7323289B2 (en) * 2002-10-08 2008-01-29 Brewer Science Inc. Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
CN100547487C (zh) * 2002-10-09 2009-10-07 日产化学工业株式会社 光刻用形成防反射膜的组合物
JP4214380B2 (ja) * 2003-01-09 2009-01-28 日産化学工業株式会社 エポキシ化合物誘導体を含む反射防止膜形成組成物
JP4466879B2 (ja) * 2004-12-03 2010-05-26 日産化学工業株式会社 二層型反射防止膜を用いたフォトレジストパターンの形成方法
WO2010061774A1 (ja) * 2008-11-27 2010-06-03 日産化学工業株式会社 アウトガス発生が低減されたレジスト下層膜形成組成物
JP5914110B2 (ja) * 2012-03-30 2016-05-11 新日鉄住金化学株式会社 硬化性樹脂組成物
CN103830860A (zh) * 2012-11-27 2014-06-04 西安奥赛福科技有限公司 船用火灾探测及细水雾灭火系统
KR102156732B1 (ko) 2014-04-25 2020-09-16 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물 및 이것을 이용한 레지스트 패턴의 형성방법
WO2017154921A1 (ja) * 2016-03-10 2017-09-14 日産化学工業株式会社 炭素原子間の不飽和結合による光架橋基を有する化合物を含む段差基板被覆組成物
KR102487404B1 (ko) * 2017-07-26 2023-01-12 에스케이이노베이션 주식회사 바닥반사 방지막 형성용 중합체 및 이를 포함하는 바닥반사 방지막 형성용 조성물
CN112313226A (zh) * 2018-06-26 2021-02-02 日产化学株式会社 包含与缩水甘油基酯化合物的反应生成物的抗蚀剂下层膜形成用组合物
JP7268684B2 (ja) 2018-10-05 2023-05-08 日産化学株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
JPWO2023037949A1 (https=) * 2021-09-13 2023-03-16

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005321752A (ja) * 2004-04-09 2005-11-17 Nissan Chem Ind Ltd イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物
CN103838086A (zh) * 2005-09-27 2014-06-04 日产化学工业株式会社 含有异氰脲酸化合物与苯甲酸化合物的反应生成物的形成防反射膜的组合物
JP2011527460A (ja) * 2008-07-08 2011-10-27 エイゼット・エレクトロニック・マテリアルズ・ユーエスエイ・コーポレイション 反射防止コーティング組成物
TW201019049A (en) * 2008-11-12 2010-05-16 Nissan Chemical Ind Ltd Resist underlayer coating film forming composition and patterning method by using the same
CN111670410A (zh) * 2018-02-02 2020-09-15 日产化学株式会社 具有二硫醚结构的抗蚀剂下层膜形成用组合物

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Publication number Publication date
US20240004295A1 (en) 2024-01-04
TW202229389A (zh) 2022-08-01
KR20230082015A (ko) 2023-06-08
KR102927084B1 (ko) 2026-02-12
JPWO2022075339A1 (https=) 2022-04-14
TWI902926B (zh) 2025-11-01
WO2022075339A1 (ja) 2022-04-14

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