CN116207003A - 晶片的处理方法 - Google Patents

晶片的处理方法 Download PDF

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CN116207003A
CN116207003A CN202211444034.0A CN202211444034A CN116207003A CN 116207003 A CN116207003 A CN 116207003A CN 202211444034 A CN202211444034 A CN 202211444034A CN 116207003 A CN116207003 A CN 116207003A
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wafer
sheet
thermocompression bonding
processing
cutting
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大前卷子
小池和裕
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Disco Corp
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Abstract

本发明提供晶片的处理方法，在利用刀具对配设于晶片的热压接片的上表面进行磨削而平坦化时，消除该热压接片从热压接片的外周剥离的问题。该晶片的处理方法对由分割预定线划分而在正面上形成有多个器件的晶片进行处理，其中，该晶片的处理方法包含如下的工序：热压接片配设工序，在晶片的正面上配设热压接片；热压接工序，对热压接片进行加热并且进行按压而将热压接片热压接于晶片的正面；阶梯差形成工序，沿着晶片的外周对热压接片进行切削，在热压接片的外周形成阶梯差部；以及平坦化工序，利用刀具对热压接片的上表面进行切削而使上表面平坦化，在该平坦化工序中，将该刀具的刃尖定位于不低于在该阶梯差形成工序中形成的阶梯差部的位置。

Description

晶片的处理方法
技术领域
本发明涉及晶片的处理方法，对由分割预定线划分而在正面上形成有多个器件的晶片进行处理。
背景技术
由分割预定线划分而在正面上形成有IC、LSI等多个器件的晶片在将背面磨削而形成为期望的厚度之后，通过切割装置、激光加工装置分割成各个器件芯片，并被用于移动电话、个人计算机等电子设备。
磨削装置构成为包含：卡盘工作台，其对晶片进行保持；以及磨削单元，其以能够旋转的方式具有对该卡盘工作台所保持的晶片进行磨削的磨削磨轮，该磨削装置能够精度良好地精加工晶片。
另外，为了即使将晶片的正面侧保持于卡盘工作台的保持面也不会给器件带来损伤，本申请人提出了如下的技术：将不具有糊料剂的热压接片热压接于晶片的正面，从而避免由于糊料的残渣、磨削水的进入等所导致的晶片的正面的污染(例如参照专利文献1)。
专利文献1：日本特开2019-186488号公报
根据上述专利文献1所记载的技术，虽然能够避免由于糊料的残渣、磨削水的进入等所导致的晶片的正面的污染，但是由于器件的凹凸，在热压接片的上表面上也出现凹凸，因此会产生即使想要在卡盘工作台的保持面上生成负压而进行吸引保持也无法适当地保持于卡盘工作台的保持面的问题。为了应对该问题，考虑利用刀具对热压接片的上表面进行磨削而使该上表面平坦，但当想要利用刀具对敷设于晶片的正面的热压接片进行磨削时，产生该热压接片从热压接片的外周剥离而无法进行平坦化的问题。
发明内容
本发明是鉴于上述事实而完成的，其主要的技术课题在于提供晶片的处理方法，在利用刀具对配设于晶片的热压接片的上表面进行磨削而平坦化时，消除该热压接片从热压接片的外周剥离的问题。
为了解决上述主要的技术课题，根据本发明，提供晶片的处理方法，对由分割预定线划分而在正面上形成有多个器件的晶片进行处理，其中，该晶片的处理方法包含如下的工序：热压接片配设工序，在晶片的正面上配设热压接片；热压接工序，对热压接片进行加热并进行按压而将热压接片热压接于晶片的正面；阶梯差形成工序，沿着晶片的外周对热压接片进行切削，在热压接片的外周形成阶梯差部；以及平坦化工序，利用刀具对热压接片的上表面进行切削而使上表面平坦化，在该平坦化工序中，将该刀具的刃尖定位于不低于在该阶梯差形成工序中形成的阶梯差部的位置。
优选该热压接片是聚烯烃系片，选自聚乙烯片、聚丙烯片、聚苯乙烯片中的任意片。优选关于在该热压接工序中对热压接片进行加热时的加热温度，在该热压接片是聚乙烯片的情况下为120℃～140℃，在该热压接片是聚丙烯片的情况下为160℃～180℃，在该热压接片是聚苯乙烯片的情况下为220℃～240℃。
优选该热压接片是聚酯系片，选自聚对苯二甲酸乙二醇酯片、聚萘二甲酸乙二醇酯片中的任意片。优选关于在该热压接工序中对热压接片进行加热时的加热温度，在该热压接片是聚对苯二甲酸乙二醇酯片的情况下为250℃～270℃，在该热压接片是聚萘二甲酸乙二醇酯片的情况下为160℃～180℃。
优选上述晶片的处理方法包含如下的磨削工序：将平坦化的热压接片的上表面保持于磨削装置的卡盘工作台的保持面，对晶片的背面进行磨削而将晶片精加工成期望的厚度。另外，优选上述晶片的处理方法包含如下的加工工序：将压接有平坦化的热压接片的晶片的背面侧保持于切割装置或激光加工装置的卡盘工作台的保持面，从热压接片侧对分割预定线实施切削加工或激光加工。
本发明的晶片的处理方法对由分割预定线划分而在正面上形成有多个器件的晶片进行处理，其中，该晶片的处理方法包含如下的工序：热压接片配设工序，在晶片的正面上配设热压接片；热压接工序，对热压接片进行加热并进行按压而将热压接片热压接于晶片的正面；阶梯差形成工序，沿着晶片的外周对热压接片进行切削，在热压接片的外周形成阶梯差部；以及平坦化工序，利用刀具对热压接片的上表面进行切削而使上表面平坦化，在该平坦化工序中，将该刀具的刃尖定位于不低于在该阶梯差形成工序中形成的阶梯差部的位置，因此，与通过该切削欲将热压接片从形成有阶梯差部的外周剥离的力相比，该阶梯差部对于晶片的压接力相对大，因此在利用刀具对热压接片的上表面进行切削而平坦化时，能够消除从热压接片的外周端部剥离的问题。
附图说明
图1是示出热压接片配设工序的实施方式的立体图。
图2是示出热压接工序的实施方式的立体图。
图3是示出将晶片载置于切削装置的卡盘工作台的方式的立体图。
图4的(a)是示出阶梯差形成工序的实施方式的立体图，图4的(b)是将形成有阶梯差部的晶片的外周端部的一部分放大而示出的侧视图。
图5的(a)是示出实施平坦化工序的切削装置的立体图，图5的(b)是示出平坦化工序的实施方式的立体图，图5的(c)是示出平坦化后的晶片的立体图。
图6的(a)是示出将晶片载置于磨削装置的卡盘工作台的方式的立体图，图6的(b)是示出磨削工序的实施方式的立体图。
图7是示出沿着晶片的分割预定线进行切削的方式的立体图。
标号说明
2：热压接片；2a：上表面；2b：外周；2c：阶梯差部；2d：切削痕；2e：外周端部；4：工作台；4a：上表面；10：晶片；10a：正面；10b：背面；12：器件；14：分割预定线；22：加热辊；30：切削装置；32：卡盘工作台；34：刀具壳体；35：旋转轴；36：切削刀具；40：切削装置；41：卡盘工作台；42：切削单元；43：旋转主轴；44：刀具安装部件；46：刀具；46a：刃尖；50：磨削装置；52：卡盘工作台；53：磨削单元；54：旋转主轴；55：磨轮安装座；56：磨削磨轮；57：磨削磨具；60：加工装置(切割装置)；62：切削单元；66：切削刀具；100：切削槽；F：框架；T：保护带。
具体实施方式
以下，参照附图对根据本发明而构成的晶片的处理方法的实施方式进行详细说明。
在图1中示出：通过本实施方式进行处理的晶片10；配设于晶片10的正面10a上的热压接片2；以及对晶片10进行保持的工作台4。晶片10由分割预定线14划分而在正面10a上形成有多个器件12。热压接片2形成为与晶片10大致相同的尺寸，是通过加热而发挥粘接力的片，例如选自聚烯烃系片或聚酯系片中的任意片。
在由聚烯烃系片构成热压接片2的情况下，例如选自聚乙烯片、聚丙烯片、聚苯乙烯片中的任意片。另外，在由聚酯系片构成热压接片2的情况下，例如选自聚对苯二甲酸乙二醇酯片、聚萘二甲酸乙二醇酯片中的任意片。在本实施方式中，对选择聚乙烯片作为热压接片2的情况进行说明。
在实施本实施方式的晶片的处理方法时，首先实施在晶片10的正面10a上配设上述热压接片2的热压接片配设工序。在实施热压接片配设工序时，如图1所示，准备上表面4a平坦地形成的工作台4，使晶片10的背面10b朝向该上表面4a而载置，并在晶片10的正面10a上敷设热压接片而成为一体(参照图1的下部)。另外，在将晶片10的背面10b载置于工作台4而进行保持时，可以在工作台4的上表面4a上配设具有通气性的吸附卡盘(例如参照图3的卡盘工作台32)，对晶片10的背面10b进行吸引保持。
若如上述那样实施了热压接片配设工序，则如以下所说明的那样实施如下的热压接工序：对热压接片2进行加热并进行按压而将热压接片2热压接于晶片10的正面10a。在实施本实施方式的热压接工序时，如图2所示，在工作台4的上方定位加热辊22(仅图示一部分)。加热辊22被保持为能够在箭头R1所示的方向上旋转，构成为能够在与工作台4的上表面4a平行的箭头R2所示的方向上移动。在加热辊22的表面上涂布有氟树脂，以便即使热压接片2通过加热而发挥粘接力也不会附着。在加热辊22的内部内置有电加热器和温度传感器(省略图示)，通过另外准备的控制装置，能够将加热辊22的表面调整为期望的温度。
若将加热辊22定位于工作台4上，则如图2所示，一边按压热压接片2的表面2a，一边使加热辊22在箭头R1所示的方向上旋转并在箭头R2所示的方向上移动。通过本实施方式的加热辊22对热压接片2进行加热时的加热温度设定成120℃～140℃的范围。该加热温度是构成热压接片2的聚乙烯片的熔点附近的温度，是热压接片2未过度熔融且发生软化而发挥粘接性的温度。这样，将热压接片2热压接于晶片10的正面10a而成为一体。另外，可以使配设工作台4和热压接辊22的空间成为封闭空间并进行减压而成为真空状态，以便在晶片10的正面10a与热压接片2的间隙中不残留空气。通过以上，完成热压接工序。
接着，实施沿着晶片10的外周对热压接片2进行切削而形成阶梯差部的阶梯差形成工序。更具体而言，将实施了上述热压接工序的晶片10搬送至图3所示的切削装置30(仅示出一部分)。
如图3所示，在切削装置30中配设有卡盘工作台32。卡盘工作台32具有：环状的框体32a；以及吸附卡盘32b，其形成保持面，被框体32a围绕并支承。该吸附卡盘32b由具有通气性的原材料形成，与省略图示的吸引源连接，通过使该吸引源进行动作而在吸附卡盘32b的上表面上生成负压。卡盘工作台32通过省略图示的旋转驱动源支承为能够旋转。
将搬送至切削装置30的晶片10以背面10b侧为下方而载置于上述卡盘工作台32并被吸引保持。接着，如图4的(a)所示，将切削单元33定位于晶片10的上方。切削单元33具有：刀具壳体34；旋转轴35，其以能够旋转的方式支承于该刀具壳体34；以及切削刀具36，其配设于该旋转轴35的前端。对于切削刀具36没有特别限定，例如选择对超钢基板的外周部分进行加工从而作为切刃而形成有锯刃的圆锯。
将上述切削刀具36定位于与晶片10的外周对应的热压接片的外周2b上，使卡盘工作台32在R3所示的方向上旋转，并且一边使切削刀具36在R4所示的方向上高速地旋转一边进行切入进给，沿着该外周2b形成阶梯差部2c。如图4的(b)所示，上述阶梯差部2c例如宽度为0.5mm～1.0mm，例如热压接片2的厚度为300μm～500μm，上表面2a相对于阶梯差部2c的高度(阶梯差)以例如50μm～100μm形成。另外，为了便于说明，以与实际的尺寸比不同的状态示出图4的(b)所示的阶梯差部2c的宽度和该阶梯差。沿着热压接片2的外周2b在整周上形成上述阶梯差部2c，由此完成阶梯差形成工序。
接着，实施利用刀具对热压接片2的上表面2a进行切削而使上表面2a平坦化的平坦化工序，在实施该平坦化工序时，将通过上述阶梯差形成工序在热压接片2的外周形成有阶梯差部2c的晶片10搬送至图5的(a)所示的切削装置40(仅示出一部分)。如图所示，切削装置40具有卡盘工作台41和切削单元42。切削单元42具有：省略图示的主轴壳体；旋转主轴43，其旋转自如地配设于该主轴壳体；以及省略图示的驱动源，其用于使旋转主轴43旋转驱动。在旋转主轴43的下端部配设有圆板形状的刀具安装部件44。在刀具安装部件44的外周部配设有向下方向延伸的刀具46。刀具46在图示的实施方式中由超钢合金等工具钢形成为棒状，在刀具46的下侧前端部配设有由金刚石等形成的刃尖46a。安装于刀具安装部件44的刀具46通过上述旋转主轴43进行旋转而与刀具安装部件44一起在箭头R5所示的方向上旋转。
在图示的切削装置40中配设有：使切削单元42在上下方向上移动的切削进给机构；以及使卡盘工作台41在箭头R6所示的方向上移动的加工进给机构(均省略图示)。将搬送至切削装置40的晶片10载置于卡盘工作台42而进行吸引保持，如图5的(b)所示，将刀具46的刃尖46a定位于低于热压接片2的上表面2a(例如低30μm)且不低于在阶梯差形成工序中形成的阶梯差部2c的高度位置。该高度位置是能够通过该刀具46将形成于热压接在晶片10的正面10a的热压接片2的上表面2a的凹凸去除的位置。接着，使切削单元42的驱动源进行动作而使旋转主轴43在箭头R5所示的方向上旋转，并且使上述加工进给机构进行动作而使卡盘工作台42在箭头R6所示的方向上移动。由此，如图5的(c)所示，对热压接片2的除了阶梯差部2c的区域以外的上表面2a进行切削而进行平坦化。另外，在图5的(c)中，为了便于说明，用虚线示出基于刀具46的切削的轨迹2d，但实际上热压接片2的上表面2a成为平整的平坦面。
根据上述实施方式，将刀具46的刃尖46a定位于不低于在阶梯差形成工序中形成的阶梯差部2c的高度位置而对热压接片2的上表面2a进行切削，因此与通过该切削欲将热压接片2从形成有阶梯差部2c的外周端部2e(参照图5的(b))剥离的力相比，该阶梯差部2c对晶片10的压接力相对大，因此即使利用刀具46对热压接片2的上表面2a进行切削而平坦化，也不会产生热压接片2的外周端部2e剥离的问题。
另外，在本实施方式中，在对晶片10的热压接片2实施了上述平坦化工序之后，将晶片10搬送至图6的(a)所示的磨削装置50(仅示出一部分)的卡盘工作台52。卡盘工作台52具有：环状的框体52a；以及吸附卡盘52b，其被框体52a围绕，形成保持面，具有通气性。使搬送至磨削装置50的晶片10的平坦化的热压接片2朝向下方而载置于卡盘工作台52的吸附卡盘52b，使省略图示的吸引源进行动作而进行吸引保持。接着，在晶片10的背面10b的上方定位图6的(b)所示的磨削单元53。磨削单元53具有：旋转主轴54，其通过未图示的旋转驱动机构进行旋转；磨轮安装座55，其安装于旋转主轴54的下端；以及磨削磨轮56，其安装于磨轮安装座55，在磨削磨轮56的下表面上呈环状配设有多个磨削磨具57。磨削单元53通过省略图示的磨削进给机构在上下方向上升降。
若将晶片10保持在卡盘工作台52上，则使卡盘工作台52在箭头R7所示的方向上以例如300rpm旋转，并且使磨削单元53的旋转主轴54在图6的(b)中箭头R8所示的方向上以例如6000rpm旋转。接着，通过未图示的磨削水提供单元将磨削水提供至晶片10的背面10b上，并且使上述磨削进给机构进行动作而使磨削单元53在箭头R9所示的方向上下降，使磨削磨具57与晶片10的背面10b接触，例如以1μm/秒的磨削进给速度进行磨削进给。一边通过未图示的接触式或非接触式的测量单元测量晶片10的厚度一边进行磨削，精加工成期望的厚度，由此完成磨削工序。若完成磨削工序并使磨削单元53停止，则实施清洗、干燥工序等。
如上所述，在本实施方式中，将热压接片2的上表面2a适当地平坦化，因此在实施磨削工序时，晶片10也被卡盘工作台52适当地保持，能够良好地磨削晶片10的背面10b。
另外，在实施了上述磨削工序之后，可以将上述晶片10搬送至图7所示的加工装置60(仅示出一部分)而实施以下说明的加工工序。在将晶片10搬送至该加工装置60时，如图7所示，借助保护带T而通过环状的框架F保持晶片10。
本实施方式的加工装置60是对晶片10进行切削加工而将晶片10分割成各个器件芯片的切割装置，加工装置60具有：对晶片10进行吸引保持的卡盘工作台(省略图示)；以及对该卡盘工作台所吸引保持的晶片10进行切削的切削单元62。该卡盘工作台构成为旋转自如，具有将卡盘工作台在图中箭头X所示的方向上进行加工进给的移动单元(省略图示)。另外，切削单元62具有：旋转轴64，其沿图中箭头Y所示的Y轴方向配设，保持为旋转自如；以及环状的切削刀具66，其保持于旋转轴64的前端，切削单元62具有将切削刀具66在Y轴方向上进行分度进给的Y轴移动单元(省略图示)。旋转轴64通过省略图示的主轴电动机进行旋转驱动。
在实施切削加工时，首先使晶片10的背面10b侧朝向下方而载置于卡盘工作台的保持面(省略图示)并进行保持，对形成于压接有热压接片2的正面10a的分割预定线14进行检测，使该分割预定线14与X轴方向一致，并且实施与切削刀具66的对位。另外，热压接片2是具有透明性的片，因此能够通过适当的拍摄单元而检测分割预定线14。接着，将在箭头R10所示的方向上高速旋转的切削刀具66定位于与X轴方向一致的分割预定线14上，从热压接片2侧切入，并且将卡盘工作台在X轴方向上进行加工进给，沿着上述分割预定线14形成将晶片10分割的切削槽100。另外，将切削单元62的切削刀具66分度进给至与形成有切削槽100的分割预定线14在Y轴方向上相邻且未形成切削槽100的分割预定线14上，与上述同样地形成切削槽100。通过重复上述过程，沿着沿X轴方向的所有分割预定线14形成切削槽100。
接着，将卡盘工作台旋转90度，使与之前形成有切削槽100的方向垂直的方向与X轴方向一致，对新与X轴方向一致的所有分割预定线14实施上述切削加工，沿着形成于晶片10的所有分割预定线14形成切削槽100。这样完成实施切削加工而沿着分割预定线14将晶片10按照每个器件12分割成器件芯片的加工工序。若完成了上述加工工序，则对热压接片2进行冷却或加热等，使热压接片2成为容易从晶片10剥离的状态而进行剥离，拾取从晶片10一个个地分割而得的器件12。
另外，在上述实施方式中，示出了加工装置60是切割装置的例子，但本发明不限于此，也可以是对晶片10照射激光光线而实施激光加工的激光加工装置。在使用激光加工装置实施加工工序的情况下，例如可以从热压接片2侧沿着分割预定线14照射对于晶片10具有吸收性的波长的激光光线而实施烧蚀加工，将晶片10分割成各个器件芯片。如上述实施方式那样，实施未从晶片10剥离热压接片2而将晶片10分割成器件芯片的加工工序，由此能够防止切削晶片10时所产生的切削屑、通过激光加工而产生的碎屑附着于分割而得的器件芯片的正面，有助于提高器件芯片的品质。
在上述实施方式中，示出了热压接片2是聚乙烯片的例子，但本发明不限于此。例如热压接片2也可以选自其他聚烯烃系片，例如可以选自聚丙烯片、聚苯乙烯片中的任意片。在选择聚丙烯片作为热压接片2的情况下，在热压接工序中进行加热时的加热温度优选为160℃～180℃，在选择聚苯乙烯片作为热压接片2的情况下的加热温度优选为220℃～240℃。另外，作为热压接片2，也可以选自聚酯系片，例如优选选自聚对苯二甲酸乙二醇酯片、聚萘二甲酸乙二醇酯片中的任意片。在选择聚对苯二甲酸乙二醇酯作为热压接片2的情况下，在热压接工序中进行加热时的加热温度优选为250℃～270℃，在选择聚萘二甲酸乙二醇酯作为热压接片2的情况下的加热温度优选为160℃～180℃。

Claims (7)

1.一种晶片的处理方法，对由分割预定线划分而在正面上形成有多个器件的晶片进行处理，其中，
该晶片的处理方法包含如下的工序：
热压接片配设工序，在晶片的正面上配设热压接片；
热压接工序，对热压接片进行加热并进行按压而将热压接片热压接于晶片的正面；
阶梯差形成工序，沿着晶片的外周对热压接片进行切削，在热压接片的外周形成阶梯差部；以及
平坦化工序，利用刀具对热压接片的上表面进行切削而使上表面平坦化，
在该平坦化工序中，将该刀具的刃尖定位于不低于在该阶梯差形成工序中形成的阶梯差部的位置。
2.根据权利要求1所述的晶片的处理方法，其中，
该热压接片是聚烯烃系片，选自聚乙烯片、聚丙烯片、聚苯乙烯片中的任意片。
3.根据权利要求2所述的晶片的处理方法，其中，
关于在该热压接工序中对热压接片进行加热时的加热温度，在该热压接片是聚乙烯片的情况下为120℃～140℃，在该热压接片是聚丙烯片的情况下为160℃～180℃，在该热压接片是聚苯乙烯片的情况下为220℃～240℃。
4.根据权利要求1所述的晶片的处理方法，其中，
该热压接片是聚酯系片，选自聚对苯二甲酸乙二醇酯片、聚萘二甲酸乙二醇酯片中的任意片。
5.根据权利要求4所述的晶片的处理方法，其中，
关于在该热压接工序中对热压接片进行加热时的加热温度，在该热压接片是聚对苯二甲酸乙二醇酯片的情况下为250℃～270℃，在该热压接片是聚萘二甲酸乙二醇酯片的情况下为160℃～180℃。
6.根据权利要求1至5中的任意一项所述的晶片的处理方法，其中，
该晶片的处理方法包含如下的磨削工序：将平坦化的热压接片的上表面保持于磨削装置的卡盘工作台的保持面，对晶片的背面进行磨削而将晶片精加工成期望的厚度。
7.根据权利要求1至6中的任意一项所述的晶片的处理方法，其中，
该晶片的处理方法包含如下的加工工序：将压接有平坦化的热压接片的晶片的背面侧保持于切割装置或激光加工装置的卡盘工作台的保持面，从热压接片侧对分割预定线实施切削加工或激光加工。
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