CN116195378A8 - 一种铁电存储器及存储设备 - Google Patents
一种铁电存储器及存储设备 Download PDFInfo
- Publication number
- CN116195378A8 CN116195378A8 CN202080105312.2A CN202080105312A CN116195378A8 CN 116195378 A8 CN116195378 A8 CN 116195378A8 CN 202080105312 A CN202080105312 A CN 202080105312A CN 116195378 A8 CN116195378 A8 CN 116195378A8
- Authority
- CN
- China
- Prior art keywords
- memory
- ferroelectric
- electrode
- basic cell
- ferroelectric memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2253—Address circuits or decoders
- G11C11/2255—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2253—Address circuits or decoders
- G11C11/2257—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2259—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2293—Timing circuits or methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/50—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the boundary region between the core and peripheral circuit regions
Abstract
本申请提供一种铁电存储器及存储设备,用于提高存储单元的集成度和微缩能力,进而减小该铁电存储器的面积。所述铁电存储器包括至少一个基本单元,所述至少一个基本单元中的基本单元包括多个铁电电容和第一晶体管;其中,所述第一晶体管包括第一栅极、第一沟道、以及位于所述第一沟道两端的第一源极和第一漏极,所述多个铁电电容的一极均形成于所述第一栅极上。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/126589 WO2022094814A1 (zh) | 2020-11-04 | 2020-11-04 | 一种铁电存储器及存储设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN116195378A CN116195378A (zh) | 2023-05-30 |
CN116195378A8 true CN116195378A8 (zh) | 2023-08-01 |
Family
ID=81456845
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202080105312.2A Pending CN116195378A (zh) | 2020-11-04 | 2020-11-04 | 一种铁电存储器及存储设备 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230276636A1 (zh) |
EP (1) | EP4227999A4 (zh) |
KR (1) | KR20230093493A (zh) |
CN (1) | CN116195378A (zh) |
WO (1) | WO2022094814A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117279391A (zh) * | 2022-06-15 | 2023-12-22 | 华为技术有限公司 | 一种铁电存储器和铁电存储器的制作方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3169599B2 (ja) * | 1990-08-03 | 2001-05-28 | 株式会社日立製作所 | 半導体装置、その駆動方法、その読み出し方法 |
DE19830569C1 (de) * | 1998-07-08 | 1999-11-18 | Siemens Ag | FeRAM-Anordnung |
JP3239109B2 (ja) * | 1998-08-28 | 2001-12-17 | 株式会社半導体理工学研究センター | 強誘電体不揮発性メモリとその読み出し方法 |
JP3377762B2 (ja) * | 1999-05-19 | 2003-02-17 | 株式会社半導体理工学研究センター | 強誘電体不揮発性メモリ |
JP2012204394A (ja) * | 2011-03-23 | 2012-10-22 | Asahi Kasei Electronics Co Ltd | 半導体装置及びその製造方法 |
CN108110007A (zh) * | 2017-11-03 | 2018-06-01 | 中国科学院微电子研究所 | 铁电存储器及其访问方法 |
-
2020
- 2020-11-04 KR KR1020237017812A patent/KR20230093493A/ko unknown
- 2020-11-04 CN CN202080105312.2A patent/CN116195378A/zh active Pending
- 2020-11-04 EP EP20960276.2A patent/EP4227999A4/en active Pending
- 2020-11-04 WO PCT/CN2020/126589 patent/WO2022094814A1/zh active Application Filing
-
2023
- 2023-05-03 US US18/311,598 patent/US20230276636A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN116195378A (zh) | 2023-05-30 |
US20230276636A1 (en) | 2023-08-31 |
KR20230093493A (ko) | 2023-06-27 |
EP4227999A1 (en) | 2023-08-16 |
WO2022094814A1 (zh) | 2022-05-12 |
EP4227999A4 (en) | 2023-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2538446A3 (en) | Wide bandgap transistors with multiple field plates | |
EP2772942A3 (en) | Capacitorless one transistor dram cell, integrated circuitry comprising an array of capacitorless one transistor dram cells, and method of forming lines of capacitorless one transistor dram cells | |
EP1796162A3 (en) | Circuit element having capacitor and field effect transistor comprising nanowires | |
EP1241708A3 (en) | Semiconductor memory device with floating body | |
EP2267769A3 (en) | DRAM transistor with a gate formed in a substrate trench | |
EP2858115A3 (en) | Semiconductor device comprising a MIS transistor | |
EP1850382A3 (en) | Modular display device and organic thin-film transistor | |
TW200735107A (en) | Memory devices including floating body transistor capacitorless memory cells and related methods | |
WO2007122083B1 (en) | Dynamic memory cell structures | |
WO2005001937A3 (en) | One transistor flash memory cell | |
EP2211466A3 (en) | Semiconductor device for data storage | |
IT1269825B (it) | Linea di bit incassata e cella di porta cilindrica,e relativo metodo di fabbricazione | |
EP2264777A3 (en) | High-voltage insulated gate field-effect transistor | |
EP2408011A3 (en) | Oxide semiconductor devices and methods of manufacturing the same | |
TW200739884A (en) | Semiconductor memory cell array having self-aligned recessed gate MOS transistors and method for forming the same | |
EP1087442A3 (en) | Floating gate memory array and self-aligned method of fabrication therefor | |
EP3618070A3 (en) | Memory cell with a ferroelectric capacitor integrated with a transistor gate | |
EP1471576A3 (en) | Semiconductor device and method for evaluating characteristics of the same | |
CN116195378A8 (zh) | 一种铁电存储器及存储设备 | |
EP2775527A3 (en) | Field effect transistor and semiconductor device using the same | |
EP2267786A3 (en) | Trench gate DMOS field-effect transistor | |
KR960036075A (ko) | 반도체 장치 | |
WO2020076615A8 (en) | Elevationally-extending transistors, devices comprising elevationally-extending transistors, and methods of forming a device comprising elevationally-extending transistors | |
SG146524A1 (en) | Capacitor top plate over source/drain to form a 1t memory device | |
EP0791936A3 (en) | Semiconductor memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CI02 | Correction of invention patent application |
Correction item: PCT international application to national stage day Correct: 2023.03.23 False: 2023.03.17 Number: 22-01 Volume: 39 Correction item: PCT international application to national stage day Correct: 2023.03.23 False: 2023.03.17 Number: 22-01 Page: The title page Volume: 39 |
|
CI02 | Correction of invention patent application |