CN116114069A - 摄像装置和光接收元件 - Google Patents

摄像装置和光接收元件 Download PDF

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Publication number
CN116114069A
CN116114069A CN202180063576.0A CN202180063576A CN116114069A CN 116114069 A CN116114069 A CN 116114069A CN 202180063576 A CN202180063576 A CN 202180063576A CN 116114069 A CN116114069 A CN 116114069A
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CN
China
Prior art keywords
semiconductor layer
substrate
imaging device
pixel
transistor
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Pending
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CN202180063576.0A
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English (en)
Chinese (zh)
Inventor
中泽圭一
小岛尚
今井愼一
金口时久
嵯峨幸一郎
徳弘快
平野嵩明
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN116114069A publication Critical patent/CN116114069A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202180063576.0A 2020-10-23 2021-10-20 摄像装置和光接收元件 Pending CN116114069A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-178463 2020-10-23
JP2020178463 2020-10-23
PCT/JP2021/038768 WO2022085722A1 (ja) 2020-10-23 2021-10-20 撮像装置および受光素子

Publications (1)

Publication Number Publication Date
CN116114069A true CN116114069A (zh) 2023-05-12

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CN202180063576.0A Pending CN116114069A (zh) 2020-10-23 2021-10-20 摄像装置和光接收元件

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US (1) US20230411429A1 (https=)
EP (1) EP4235791A4 (https=)
JP (1) JP7791098B2 (https=)
KR (1) KR20230091873A (https=)
CN (1) CN116114069A (https=)
TW (1) TW202224171A (https=)
WO (1) WO2022085722A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3135826B1 (fr) * 2022-05-19 2025-09-26 Commissariat Energie Atomique Capteur d’images
JPWO2024014209A1 (https=) * 2022-07-12 2024-01-18
JP2024011954A (ja) * 2022-07-15 2024-01-25 キヤノン株式会社 半導体装置および半導体装置の製造方法
JP2024138782A (ja) * 2023-03-27 2024-10-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
CN121241687A (zh) * 2023-06-20 2025-12-30 索尼半导体解决方案公司 半导体装置
JP2025056833A (ja) * 2023-09-27 2025-04-09 ソニーセミコンダクタソリューションズ株式会社 光検出装置
JP2025059388A (ja) * 2023-09-29 2025-04-10 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2025134777A1 (ja) * 2023-12-21 2025-06-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
WO2026053610A1 (ja) * 2024-09-06 2026-03-12 ソニーセミコンダクタソリューションズ株式会社 光検出装置
WO2026083730A1 (en) * 2024-10-16 2026-04-23 Sony Semiconductor Solutions Corporation Photodetector and electronic apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5775018B2 (ja) 1999-10-13 2015-09-09 ソニー株式会社 半導体装置
JP2017027982A (ja) * 2015-07-16 2017-02-02 ルネサスエレクトロニクス株式会社 撮像装置およびその製造方法
JP6779825B2 (ja) * 2017-03-30 2020-11-04 キヤノン株式会社 半導体装置および機器
WO2019130702A1 (ja) 2017-12-27 2019-07-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置
WO2020090403A1 (ja) * 2018-10-30 2020-05-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および撮像装置
TWI890521B (zh) * 2018-11-21 2025-07-11 日商索尼半導體解決方案公司 固體攝像元件
JP2020096225A (ja) * 2018-12-10 2020-06-18 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び電子機器
EP3896723B1 (en) * 2018-12-13 2026-04-08 Sony Semiconductor Solutions Corporation Solid-state imaging element and video recording device
TWI860337B (zh) * 2019-03-15 2024-11-01 日商索尼半導體解決方案公司 攝像元件及半導體元件
JP6832975B2 (ja) 2019-04-19 2021-02-24 ソフトバンク株式会社 受電アンテナ、上空移動体、無線電力伝送システム及び受電アンテナの製造方法

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KR20230091873A (ko) 2023-06-23
TW202224171A (zh) 2022-06-16
JP7791098B2 (ja) 2025-12-23
US20230411429A1 (en) 2023-12-21
JPWO2022085722A1 (https=) 2022-04-28
EP4235791A4 (en) 2024-04-24
WO2022085722A1 (ja) 2022-04-28
EP4235791A1 (en) 2023-08-30

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