JPWO2024014209A1 - - Google Patents

Info

Publication number
JPWO2024014209A1
JPWO2024014209A1 JP2024533588A JP2024533588A JPWO2024014209A1 JP WO2024014209 A1 JPWO2024014209 A1 JP WO2024014209A1 JP 2024533588 A JP2024533588 A JP 2024533588A JP 2024533588 A JP2024533588 A JP 2024533588A JP WO2024014209 A1 JPWO2024014209 A1 JP WO2024014209A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024533588A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024014209A1 publication Critical patent/JPWO2024014209A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/807Pixel isolation structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections
JP2024533588A 2022-07-12 2023-06-12 Pending JPWO2024014209A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202263388556P 2022-07-12 2022-07-12
PCT/JP2023/021813 WO2024014209A1 (ja) 2022-07-12 2023-06-12 撮像装置

Publications (1)

Publication Number Publication Date
JPWO2024014209A1 true JPWO2024014209A1 (https=) 2024-01-18

Family

ID=89536560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024533588A Pending JPWO2024014209A1 (https=) 2022-07-12 2023-06-12

Country Status (7)

Country Link
US (1) US20260006922A1 (https=)
EP (1) EP4557371A4 (https=)
JP (1) JPWO2024014209A1 (https=)
KR (1) KR20250034961A (https=)
CN (1) CN119318225A (https=)
TW (1) TW202416517A (https=)
WO (1) WO2024014209A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5537523B2 (ja) * 2011-09-22 2014-07-02 株式会社東芝 固体撮像装置
TWI860337B (zh) * 2019-03-15 2024-11-01 日商索尼半導體解決方案公司 攝像元件及半導體元件
TWI904094B (zh) * 2019-06-26 2025-11-11 日商索尼半導體解決方案公司 攝像裝置
JP7403993B2 (ja) 2019-08-20 2023-12-25 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2021136366A (ja) * 2020-02-28 2021-09-13 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び光検出装置
US20230411429A1 (en) * 2020-10-23 2023-12-21 Sony Semiconductor Solutions Corporation Imaging device and light-receiving element

Also Published As

Publication number Publication date
WO2024014209A1 (ja) 2024-01-18
EP4557371A4 (en) 2025-10-22
KR20250034961A (ko) 2025-03-11
US20260006922A1 (en) 2026-01-01
TW202416517A (zh) 2024-04-16
EP4557371A1 (en) 2025-05-21
CN119318225A (zh) 2025-01-14

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