KR20250034961A - 촬상 장치 - Google Patents

촬상 장치 Download PDF

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Publication number
KR20250034961A
KR20250034961A KR1020257002526A KR20257002526A KR20250034961A KR 20250034961 A KR20250034961 A KR 20250034961A KR 1020257002526 A KR1020257002526 A KR 1020257002526A KR 20257002526 A KR20257002526 A KR 20257002526A KR 20250034961 A KR20250034961 A KR 20250034961A
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KR
South Korea
Prior art keywords
electrode portion
semiconductor layer
electrode
imaging device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257002526A
Other languages
English (en)
Korean (ko)
Inventor
요시아키 기쿠치
히데미츠 오우치
마나부 도미타
도시키 하야시
히사시 치바
히데오미 구마노
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Publication of KR20250034961A publication Critical patent/KR20250034961A/ko
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
KR1020257002526A 2022-07-12 2023-06-12 촬상 장치 Pending KR20250034961A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263388556P 2022-07-12 2022-07-12
US63/388,556 2022-07-12
PCT/JP2023/021813 WO2024014209A1 (ja) 2022-07-12 2023-06-12 撮像装置

Publications (1)

Publication Number Publication Date
KR20250034961A true KR20250034961A (ko) 2025-03-11

Family

ID=89536560

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257002526A Pending KR20250034961A (ko) 2022-07-12 2023-06-12 촬상 장치

Country Status (7)

Country Link
US (1) US20260006922A1 (https=)
EP (1) EP4557371A4 (https=)
JP (1) JPWO2024014209A1 (https=)
KR (1) KR20250034961A (https=)
CN (1) CN119318225A (https=)
TW (1) TW202416517A (https=)
WO (1) WO2024014209A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021034435A (ja) 2019-08-20 2021-03-01 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5537523B2 (ja) * 2011-09-22 2014-07-02 株式会社東芝 固体撮像装置
TWI860337B (zh) * 2019-03-15 2024-11-01 日商索尼半導體解決方案公司 攝像元件及半導體元件
TWI904094B (zh) * 2019-06-26 2025-11-11 日商索尼半導體解決方案公司 攝像裝置
JP2021136366A (ja) * 2020-02-28 2021-09-13 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び光検出装置
US20230411429A1 (en) * 2020-10-23 2023-12-21 Sony Semiconductor Solutions Corporation Imaging device and light-receiving element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021034435A (ja) 2019-08-20 2021-03-01 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器

Also Published As

Publication number Publication date
JPWO2024014209A1 (https=) 2024-01-18
WO2024014209A1 (ja) 2024-01-18
EP4557371A4 (en) 2025-10-22
US20260006922A1 (en) 2026-01-01
TW202416517A (zh) 2024-04-16
EP4557371A1 (en) 2025-05-21
CN119318225A (zh) 2025-01-14

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PA0105 International application

Patent event date: 20250123

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application