TW202416517A - 攝像裝置 - Google Patents

攝像裝置 Download PDF

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Publication number
TW202416517A
TW202416517A TW112125114A TW112125114A TW202416517A TW 202416517 A TW202416517 A TW 202416517A TW 112125114 A TW112125114 A TW 112125114A TW 112125114 A TW112125114 A TW 112125114A TW 202416517 A TW202416517 A TW 202416517A
Authority
TW
Taiwan
Prior art keywords
electrode portion
electrode
semiconductor layer
region
unit
Prior art date
Application number
TW112125114A
Other languages
English (en)
Chinese (zh)
Inventor
菊池善明
大内秀益
冨田学
林利起
千葉𨺓永
熊野秀臣
Original Assignee
日商索尼半導體解決方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202416517A publication Critical patent/TW202416517A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
TW112125114A 2022-07-12 2023-07-05 攝像裝置 TW202416517A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202263388556P 2022-07-12 2022-07-12
US63/388,556 2022-07-12

Publications (1)

Publication Number Publication Date
TW202416517A true TW202416517A (zh) 2024-04-16

Family

ID=89536560

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112125114A TW202416517A (zh) 2022-07-12 2023-07-05 攝像裝置

Country Status (7)

Country Link
US (1) US20260006922A1 (https=)
EP (1) EP4557371A4 (https=)
JP (1) JPWO2024014209A1 (https=)
KR (1) KR20250034961A (https=)
CN (1) CN119318225A (https=)
TW (1) TW202416517A (https=)
WO (1) WO2024014209A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5537523B2 (ja) * 2011-09-22 2014-07-02 株式会社東芝 固体撮像装置
TWI860337B (zh) * 2019-03-15 2024-11-01 日商索尼半導體解決方案公司 攝像元件及半導體元件
TWI904094B (zh) * 2019-06-26 2025-11-11 日商索尼半導體解決方案公司 攝像裝置
JP7403993B2 (ja) 2019-08-20 2023-12-25 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2021136366A (ja) * 2020-02-28 2021-09-13 ソニーセミコンダクタソリューションズ株式会社 撮像装置及び光検出装置
US20230411429A1 (en) * 2020-10-23 2023-12-21 Sony Semiconductor Solutions Corporation Imaging device and light-receiving element

Also Published As

Publication number Publication date
JPWO2024014209A1 (https=) 2024-01-18
WO2024014209A1 (ja) 2024-01-18
EP4557371A4 (en) 2025-10-22
KR20250034961A (ko) 2025-03-11
US20260006922A1 (en) 2026-01-01
EP4557371A1 (en) 2025-05-21
CN119318225A (zh) 2025-01-14

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