CN116062984A - Deposition cavity for external vapor deposition method - Google Patents
Deposition cavity for external vapor deposition method Download PDFInfo
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- CN116062984A CN116062984A CN202310139596.2A CN202310139596A CN116062984A CN 116062984 A CN116062984 A CN 116062984A CN 202310139596 A CN202310139596 A CN 202310139596A CN 116062984 A CN116062984 A CN 116062984A
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- 238000000151 deposition Methods 0.000 title claims abstract description 87
- 230000008021 deposition Effects 0.000 title claims abstract description 87
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000011084 recovery Methods 0.000 claims abstract description 15
- 230000001105 regulatory effect Effects 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000000843 powder Substances 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 238000005137 deposition process Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 238000001914 filtration Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000002485 combustion reaction Methods 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000001089 thermophoresis Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000002737 fuel gas Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
- C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/01—Other methods of shaping glass by progressive fusion or sintering of powdered glass onto a shaping substrate, i.e. accretion, e.g. plasma oxidation deposition
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
- C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
- C03B37/01815—Reactant deposition burners or deposition heating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- General Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacture, Treatment Of Glass Fibers (AREA)
Abstract
The invention relates to a deposition cavity for an external vapor deposition method, which comprises a deposition cavity, wherein an upper rotary chuck and a lower rotary chuck are arranged in the deposition cavity, a blast lamp with an upper interval and a lower interval is arranged corresponding to the upper rotary chuck and the lower rotary chuck, the upper rotary chuck and the lower rotary chuck or the blast lamp are connected with an up-down moving device, one side of the deposition cavity is communicated with an air inlet cavity, and the other side of the deposition cavity is communicated with an air suction cavity. The invention can regulate and control the temperature of the gas sent into different areas in the deposition cavity, and can lead the upper and lower temperature distribution of the whole deposition cavity, especially the powder rod deposition area, to be more uniform and consistent, thereby effectively improving the deposition quality of the OVD process. Install the tail gas recovery pipeline and make partial tail gas retrieve to the gas filter chamber, realize energy-conserving solar terms's effect.
Description
Technical Field
The invention relates to a deposition chamber for an external vapor deposition method, which is a matched device for preparing a synthetic quartz glass cylinder.
Background
The manufacture of quartz glass cylinders by the outside vapor deposition method (OVD) is an important and well known method, which gives high purity synthetic silica quartz glass products, which are commonly used in the optical fiber, optical glass and semiconductor industries due to their outstanding material properties. The OVD process flow is to deposit a silica nano-gas stream on a target rod by a deposition torch to form a porous silica powder rod preform, and then sinter the porous silica powder rod preform into a nonporous pure silica quartz glass cylinder in vacuum or helium.
The deposition mechanism of the OVD method is thermophoresis, which means that the particles can move from a high temperature region to a low temperature region due to the effect of a temperature gradient on the particles, so that the temperature gradient is a main factor affecting the deposition, the temperature of the particles is higher, the temperature of a target material is lower, and the collection rate and the deposition efficiency can be improved. In order to ensure the deposition purity and uniformity of the deposited silicon dioxide powder rod, the spraying combustion deposition process of the blast lamp is carried out in a deposition cavity with negative pressure, the whole blast lamp group and the deposition target rod are sealed in the deposition cavity by the deposition cavity, the deposition cavity is isolated relatively from the outside, the deposition area is kept at a higher temperature, and meanwhile, dust which is not deposited on the target rod is timely extracted from the deposition area by arranging an air inlet cavity and an air suction cavity. The existing deposition cavity and exhaust cavity are of a single cavity structure, the temperature of gas entering the cavity is uniform up and down, along with continuous deposition combustion, the temperature in the cavity is increased, the outer diameter of the soot prefabricated member is increased continuously, and the deposition area and the prefabricated member powder rod are enabled to have uneven temperature up and down due to upward movement of air convection heat, so that thermophoresis deposition rates are different, and even 'gourd-shaped' prefabricated member powder rods with uneven outer diameters can appear. The temperature gradient distribution in the deposition process is directly influenced by the temperature change and fluctuation of the deposition area, so that the deposition rate of the powder rod is reduced, the powder rod is deposited unevenly up and down, and the deposition quality is reduced. In order to obtain the desired deposition rate, the prior art has often selected to increase the lower burner flame temperature for heating the lower portion of the core rod and to regulate the upward heat surge due to convection. However, the method causes huge waste of heat on one hand, and on the other hand, the problem of uneven upper and lower temperatures of the core rod cannot be thoroughly solved, so that a quartz preform product with excellent quality is difficult to obtain. Especially large diameter powder bars, this phenomenon is more serious.
Disclosure of Invention
The invention aims to solve the technical problem of providing a deposition cavity for an external vapor deposition method aiming at the defects in the prior art, which can adjust the temperature of a thermal field of a deposition area, ensure that the temperature of the deposition area is uniformly distributed and improve the deposition quality.
The invention adopts the technical proposal for solving the problems that:
the device comprises a deposition cavity, wherein an upper rotary chuck and a lower rotary chuck are arranged in the deposition cavity, a blast lamp with an upper interval and a lower interval is arranged corresponding to the upper rotary chuck and the lower rotary chuck, the upper rotary chuck and the lower rotary chuck or the blast lamp are connected with an up-down moving device, one side of the deposition cavity is communicated with an air inlet cavity, and the other side of the deposition cavity is communicated with an air suction cavity.
According to the scheme, the air inlet of the sub air inlet cavity is communicated with the gas filtering cavity, and a gas filter is arranged in the gas filtering cavity.
According to the scheme, the sub air inlet cavity is in a pyramid cylinder shape, the front part is big and the rear part is small, the front end is communicated with the front of the air inlet cavity, the rear end is communicated with the gas filtering cavity through the connecting pipe, and the heating device is arranged on the connecting pipe.
According to the scheme, the air suction cavity is positioned on one side of the front of the blast lamp, the front of the air suction cavity is communicated with the deposition cavity, the rear of the air suction cavity is connected with the sub air suction cavities which are vertically separated, the air outlet of each sub air suction cavity is connected with the air quantity regulating valve in series and used for regulating the flow of the extracted air, and the air outlet of each sub air suction cavity is communicated with the air suction pipeline.
According to the scheme, the number of the sub air inlet cavities is 6-15 corresponding to the number of the air inlet cavities, and the number of the sub air suction cavities is 6-15 corresponding to the number of the air suction cavities.
According to the scheme, the exhaust pipeline is connected with the tail gas recovery pipeline in parallel, a tail gas recovery pump is arranged in the tail gas recovery pipeline, and the other end of the tail gas recovery pipeline is communicated with the gas filter cavity, so that part of heat of the tail gas is recovered.
According to the scheme, the upper rotary baffle disc and the lower rotary baffle disc are correspondingly arranged on the upper rotary chuck and the lower rotary chuck.
According to the scheme, the side walls on two sides of the deposition cavity are provided with guide fin devices capable of swinging up and down.
According to the scheme, the guide fin device comprises guide fins hinged with the side wall and arranged in an up-down parallel and spaced mode, the outer ends of the guide fins are hinged with up-down moving swing rods, and the up-down moving swing rods are connected with a reciprocating driving mechanism.
The deposition process of the invention is as follows: the deposition target rod is clamped on an upper rotary chuck and a lower rotary chuck, an air inlet cavity and an air suction cavity are opened, air inlet air is heated and air suction quantity is regulated, the deposition cavity reaches a preset temperature range and an air pressure range, then the upper rotary chuck and the lower rotary chuck are opened to drive the deposition target rod to rotate, an up-down moving device is opened to enable the upper rotary chuck, the lower rotary chuck and a blast lamp to keep relative up-down reciprocating movement, the blast lamp is ignited to enable the blast lamp to jet raw material gas, fuel gas and inert gas and mix and burn to generate silicon dioxide reactant to deposit on the periphery of the target rod, and in the deposition process, the sub air inlet cavity of the air inlet cavity automatically carries out dynamic regulation of air inlet temperature according to temperature feedback of separated deposition areas, so that the temperatures of the upper deposition area and the lower deposition area of the target rod tend to be consistent. In the initial stage of deposition, the temperatures of the rotary target rod and the deposition cavity tend to room temperature, the temperature of the air inlet cavity is compensated to 400 ℃, the upper part and the lower part of the air inlet cavity are the same, no difference exists, the burner sprays flame, and the surface temperature of the whole target rod is kept to be more than 500 ℃ and less than 1200 ℃; in the middle deposition period, the deposition reaction occurs, so that the temperature of the cavity is increased, the chimney effect is obvious, the temperature compensation of the air inlet cavity is reduced from 400 ℃ to the bottom, and the temperature gradually reduces from the bottom to the top, and the surface temperature of the whole target rod is kept to be more than 500 ℃ and less than 1200 ℃; at the end of deposition, the temperature of the air inlet cavity and the temperature on the blowlamp are compensated, the temperature of the surface of the whole target rod is kept to be more than 500 ℃ and less than 1200 ℃, and then the temperature is gradually reduced, and the powder rod is annealed. By adopting the scheme, the temperature difference in the deposition process can be maintained at a certain level (+ -50 ℃), the density of the powder rod is consistent in the radial direction and the longitudinal direction, and the refractive index and the light level after sintering are consistent. The torch continues to spray until deposition is completed. The sub-exhaust chambers of the exhaust chamber can adjust the flow of the exhaust gas according to the injection amount and the deposition amount of the raw material gas through the air quantity adjusting valve, so as to ensure that the deposited dust is timely exhausted.
The invention has the beneficial effects that: 1. the air inlet cavity is arranged into a sub air inlet cavity structure which is vertically separated, the temperature of gas fed into different areas in the deposition cavity can be regulated and controlled, the different deposition areas are heated and regulated according to different conditions, the temperature regulating area is larger, and the upper temperature and the lower temperature of the whole deposition cavity, especially the powder rod deposition area, can be distributed more uniformly and consistently, so that the deposition quality of the OVD process is effectively improved. 2. The upper and lower rotary baffle disc structures can be arranged to carry out heat compensation on the temperature of the deposition area, so that the temperature distribution of the upper and lower thermal fields is more uniform. 3. The arrangement of the sub-exhaust cavity is favorable for the uniformity and smoothness of the air flow field, promotes the uniformity of the temperature field, and avoids the vortex formed by dust which is sprayed out of the burner port and is not collected on the powder rod before the powder rod and the exhaust pipe orifice, and the dust is deposited on the powder rod again to form a bulge so as to cause the scrapping of the powder rod. 4. The side walls on two sides of the deposition cavity are provided with guide fin devices capable of swinging up and down, so that turbulence in the cavity can be reduced, and the flow direction of air flow can be regulated, so that the air flow is more stable. Install the tail gas recovery pipeline and make partial tail gas retrieve to the gas filter chamber for partial heat of higher temperature tail gas obtains recycle, realizes energy-conserving solar terms's effect.
Drawings
Fig. 1 is a schematic general structure of an embodiment of the present invention.
Fig. 2 is a schematic view of the structure of the upper and lower rotating baffle plates and guide fins according to one embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The deposition cavity of the invention comprises a deposition cavity 7 with a long box shape, an upper rotary chuck 8 and a lower rotary chuck 15 are arranged in the deposition cavity, an upper rotary baffle disk 9 and a lower rotary baffle disk 14 are correspondingly arranged on the upper rotary chuck and the lower rotary baffle disk, and the upper rotary baffle disk and the lower rotary baffle disk are positioned at the upper end and the lower end of a deposition target rod and rotate together with the upper rotary chuck, the lower rotary chuck and the deposition target rod. The upper rotary chuck and the lower rotary chuck are correspondingly provided with a blast lamp 6 which is vertically spaced, the blast lamp is connected with an upper reciprocating movement device and a lower reciprocating movement device, one side of a deposition cavity 7 is communicated with an air inlet cavity, the air inlet cavity is positioned on one side of the back of the blast lamp, the front 5 of the air inlet cavity is communicated with the deposition cavity, the rear of the air inlet cavity is connected with a sub air inlet cavity 4 which is vertically separated, the sub air inlet cavity is in a pyramid cylinder shape, the front is big and small, the front end is communicated with the front of the air inlet cavity, the rear end is an air inlet, the air inlet is communicated with a gas filter cavity through a connecting pipe, the heating device is arranged at the connecting pipe, the heating device is an electric heating device, the air inlet of each sub air inlet cavity is provided with an electric heating device 3 for heating inlet gas, the air inlet of the sub air inlet cavity is communicated with the gas filter cavity 1, and the gas filter cavity is provided with a gas filter 2. The other side of the deposition cavity is communicated with an exhaust cavity, the exhaust cavity is positioned at one side in front of the blast burner, the front 10 of the exhaust cavity is communicated with the deposition cavity, the rear of the exhaust cavity is connected with sub exhaust cavities 11 which are vertically separated, an air outlet of each sub exhaust cavity is connected with an air quantity regulating valve 13 in series for regulating the flow of the extracted air, and an air outlet of each sub exhaust cavity is communicated with an exhaust pipeline 12. The exhaust pipeline is connected with a tail gas recovery pipeline 17 in parallel, a tail gas recovery pump 16 is arranged in the tail gas recovery pipeline, and the other end of the tail gas recovery pipeline is communicated with the gas filter cavity, so that part of heat of the tail gas is recovered. The exhaust pipeline performs exhaust by utilizing negative pressure, and tail gas is recovered and controlled by a tail gas recovery pump, so that energy conservation and emission reduction are realized. The side walls on two sides of the deposition cavity are provided with guide fin devices capable of swinging up and down, the guide fin devices comprise guide fins 18 which are hinged with side wall hinges 20 and are arranged at intervals in parallel up and down, the outer ends of the guide fins are hinged with up-and-down moving swing rods 19, and the up-and-down moving swing rods are connected with a reciprocating driving mechanism.
Claims (9)
1. The deposition cavity for external vapor deposition includes deposition cavity, upper and lower rotary chucks in the deposition cavity, upper and lower blast lamps corresponding to the upper and lower rotary chucks, upper and lower blast lamps connected to the upper and lower moving units, one side of the deposition cavity communicated with the air intake cavity, and the other side of the deposition cavity communicated with the exhaust cavity.
2. The deposition chamber for external vapor deposition as defined in claim 1 wherein said sub-chamber inlet is in communication with a gas filter chamber, said gas filter chamber having a gas filter disposed therein.
3. The deposition chamber for external vapor deposition according to claim 2, wherein the sub-air inlet chamber has a pyramid shape, a front end and a rear end, the front end is communicated with the front of the air inlet chamber, the rear end is communicated with the gas filter chamber through a connecting pipe, and the heating device is arranged on the connecting pipe.
4. The deposition chamber for external vapor deposition according to claim 1 or 2, wherein the suction chamber is located at one side of the front of the burner, the front of the suction chamber is communicated with the deposition chamber, the rear of the suction chamber is connected with sub-suction chambers separated up and down, the air outlet of each sub-suction chamber is connected with an air quantity regulating valve in series for regulating the flow of the extracted air, and the air outlet of the sub-suction chamber is communicated with the suction pipe.
5. The deposition chamber for external vapor deposition according to claim 4, wherein the number of sub-air intake chambers is 6-15 corresponding to the number of air intake chambers, and the number of sub-air exhaust chambers is 6-15 corresponding to the number of air exhaust chambers.
6. The deposition chamber for external vapor deposition according to claim 1 or 2, wherein the exhaust pipe is connected by a tail gas recovery pipe, a tail gas recovery pump is installed in the tail gas recovery pipe, and the other end of the tail gas recovery pipe is communicated with the gas filter chamber, so that part of heat of the tail gas is recovered.
7. The deposition chamber for the external vapor deposition method according to claim 1 or 2, wherein upper and lower rotary shutters are provided on the upper and lower rotary chucks, respectively.
8. The deposition chamber for external vapor deposition according to claim 1 or 2, wherein the side walls of both sides of the deposition chamber are provided with guide fin means swingable up and down.
9. The deposition chamber for external vapor deposition as defined in claim 8 wherein said guide fin means comprises guide fins hinged to the side walls in spaced parallel relationship from each other, the outer ends of the guide fins being hinged to an up-and-down movable swing link, the up-and-down movable swing link being connected to a reciprocating drive mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310139596.2A CN116062984A (en) | 2023-02-17 | 2023-02-17 | Deposition cavity for external vapor deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310139596.2A CN116062984A (en) | 2023-02-17 | 2023-02-17 | Deposition cavity for external vapor deposition method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116062984A true CN116062984A (en) | 2023-05-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310139596.2A Pending CN116062984A (en) | 2023-02-17 | 2023-02-17 | Deposition cavity for external vapor deposition method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001158626A (en) * | 1999-12-01 | 2001-06-12 | Shin Etsu Chem Co Ltd | Method and device for sintering porous preform |
| US20010054302A1 (en) * | 1998-07-29 | 2001-12-27 | Shin-Etsu Chemical Co., Ltd. | Optical fiber base material ingot and method for producing the same |
| EP1700832A1 (en) * | 2005-03-09 | 2006-09-13 | Degussa AG | A method of producing glass of optical quality |
| CN101041550A (en) * | 2006-12-28 | 2007-09-26 | 北京交通大学 | Method and device for improving MCVD deposition efficiency and quality of low-temperature refrigeration |
| CN104445911A (en) * | 2007-07-24 | 2015-03-25 | 信越化学工业株式会社 | Furnace |
-
2023
- 2023-02-17 CN CN202310139596.2A patent/CN116062984A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010054302A1 (en) * | 1998-07-29 | 2001-12-27 | Shin-Etsu Chemical Co., Ltd. | Optical fiber base material ingot and method for producing the same |
| JP2001158626A (en) * | 1999-12-01 | 2001-06-12 | Shin Etsu Chem Co Ltd | Method and device for sintering porous preform |
| EP1700832A1 (en) * | 2005-03-09 | 2006-09-13 | Degussa AG | A method of producing glass of optical quality |
| CN101041550A (en) * | 2006-12-28 | 2007-09-26 | 北京交通大学 | Method and device for improving MCVD deposition efficiency and quality of low-temperature refrigeration |
| CN104445911A (en) * | 2007-07-24 | 2015-03-25 | 信越化学工业株式会社 | Furnace |
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