CN116217067B - Deposition system and method for quartz glass cylinder - Google Patents
Deposition system and method for quartz glass cylinder Download PDFInfo
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- CN116217067B CN116217067B CN202310137731.XA CN202310137731A CN116217067B CN 116217067 B CN116217067 B CN 116217067B CN 202310137731 A CN202310137731 A CN 202310137731A CN 116217067 B CN116217067 B CN 116217067B
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- 230000008021 deposition Effects 0.000 title claims abstract description 138
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims description 21
- 238000000151 deposition Methods 0.000 claims abstract description 151
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 238000005137 deposition process Methods 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 268
- 239000002994 raw material Substances 0.000 claims description 88
- 239000000843 powder Substances 0.000 claims description 54
- 239000002737 fuel gas Substances 0.000 claims description 40
- 239000011261 inert gas Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 28
- 238000011084 recovery Methods 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- 239000000428 dust Substances 0.000 claims description 13
- 230000001105 regulatory effect Effects 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 8
- 239000007921 spray Substances 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 2
- 239000000376 reactant Substances 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims 4
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000000452 restraining effect Effects 0.000 claims 1
- 239000004071 soot Substances 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 47
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 9
- 206010010904 Convulsion Diseases 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000036461 convulsion Effects 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 7
- 229910052906 cristobalite Inorganic materials 0.000 description 7
- 229910052682 stishovite Inorganic materials 0.000 description 7
- 229910052905 tridymite Inorganic materials 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 238000005485 electric heating Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000779 smoke Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 210000001503 joint Anatomy 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001089 thermophoresis Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
- C03B37/01807—Reactant delivery systems, e.g. reactant deposition burners
- C03B37/01815—Reactant deposition burners or deposition heating means
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/01—Other methods of shaping glass by progressive fusion or sintering of powdered glass onto a shaping substrate, i.e. accretion, e.g. plasma oxidation deposition
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
- C03B37/01—Manufacture of glass fibres or filaments
- C03B37/012—Manufacture of preforms for drawing fibres or filaments
- C03B37/014—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD]
- C03B37/018—Manufacture of preforms for drawing fibres or filaments made entirely or partially by chemical means, e.g. vapour phase deposition of bulk porous glass either by outside vapour deposition [OVD], or by outside vapour phase oxidation [OVPO] or by vapour axial deposition [VAD] by glass deposition on a glass substrate, e.g. by inside-, modified-, plasma-, or plasma modified- chemical vapour deposition [ICVD, MCVD, PCVD, PMCVD], i.e. by thin layer coating on the inside or outside of a glass tube or on a glass rod
- C03B37/01861—Means for changing or stabilising the diameter or form of tubes or rods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- General Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacture, Treatment Of Glass Fibers (AREA)
Abstract
The invention relates to a deposition system and a deposition method for quartz glass cylinders, wherein the system comprises a deposition cavity, an upper rotary chuck and a lower rotary chuck are arranged in the deposition cavity, a blast lamp with an upper interval and a lower interval is arranged corresponding to the upper rotary chuck and the lower rotary chuck, the upper rotary chuck and the lower rotary chuck or the blast lamp are connected with an up-down moving device, one side of the deposition cavity is communicated with an air inlet cavity, and the other side of the deposition cavity is communicated with an air suction cavity. The gas is sprayed out from the gas ring nozzle to form a cylindrical gas curtain, and the gas curtain with stable gas flow is used for replacing a cover in front of the blast lamp, so that the gas in a deposition area can be restrained in the gas ring, a stable gas flow field is provided for a reaction area of silicon dioxide, and the consistency of the whole deposition process is ensured. Meanwhile, the temperature of the gas introduced into the gas ring can be gradually changed along with the deposition process, so that the temperature distribution of the upper and lower thermal fields of the deposition area is uniform, and the deposition quality is improved.
Description
Technical Field
The invention relates to a deposition system and a deposition method of a quartz glass cylinder, in particular to a system and a method for preparing a synthetic quartz glass cylinder by an Outside Vapor Deposition (OVD), which can be used in the technical fields of optical fiber preformed bars, optical devices and semiconductors.
Background
The manufacture of quartz glass cylinders by the outside vapor deposition method (OVD) is an important and well known method, which gives high purity synthetic silica quartz glass products, which are commonly used in the optical fiber, optical glass and semiconductor industries due to their outstanding material properties. The OVD process flow is to deposit a silica nano-gas stream on a target rod by a deposition torch to form a porous silica powder rod preform, and then sinter the porous silica powder rod preform into a nonporous pure silica quartz glass cylinder in vacuum or helium.
In the vapor deposition method, a glass blast lamp is adopted as the blast lamp, fire processing is generally adopted, the precision is low, for example, the roundness and concentricity of a blast lamp material pipe and an air pipe are poor, dust is easy to accumulate on a material pipe port after long-time deposition, so that the defect of a powder rod product is caused by crystallization, and excessive scrapping is caused; the consistency and repeatability of a plurality of glass blowlamps are poor, multiple lamps are adopted to deposit on one target rod, the diameter of the powder rod is unevenly distributed, and the optical parameters of the optical fiber are scrapped.
The deposition mechanism of the OVD method is thermophoresis, which means that the particles can move from a high temperature region to a low temperature region due to the effect of a temperature gradient on the particles, so that the temperature gradient is a main factor affecting the deposition, the temperature of the particles is higher, the temperature of a target material is lower, and the collection rate and the deposition efficiency can be improved. However, OVD targets generally adopt rotating target rods, and the torches adopt a plurality of small-area torches, as disclosed in chinese patent CN1215002, in which the flame deposition area of the torches has a higher temperature, and leaves the flame, the deposition surface has a rapidly lower temperature, especially for large-diameter powder rods, and this phenomenon is more serious, and thermal stress generated by temperature rise and drop increases the cracking risk of the powder rods sharply, resulting in rejection of the product.
In international patent WO2004002911 it is mentioned that the deposition of a cylindrical burner with a radial density gradient on a target rod in a conventional OVD apparatus forms a spiral deposition pattern on the deposition surface, eventually forming corrugations on the sintered periphery. In addition, in the preparation process, the target rod is vertically arranged in the reaction cavity, a plurality of blowlamps move up and down on the deposition side of the target rod, the temperature of the upper end of the target rod is higher than that of the lower end due to the chimney effect and hot air rising, and turbulent flow can be caused to layered flow of flame due to rapid movement of the cylindrical burner and the target rod, so that the density difference of the deposited powder rod is aggravated, and the quality of deposited products is influenced.
US patent 2018022147 discloses that in order to obtain a higher dust collection rate and deposition rate, the effective diameter of the aperture is adjusted by moving the second smoke tube in the first smoke tube so that the second spraying size of the smoke dust in the later stage of deposition is larger than the sprayed size, the collection rate and deposition rate of deposition are improved, but in such a small space of the blast lamp, the accurate movement of the material tube is implemented, and meanwhile, the accurate sealing is ensured, the technical difficulty is high, and the reliability and stability of the equipment are reduced.
Disclosure of Invention
The invention aims to solve the technical problems of providing a quartz glass cylinder deposition system and a quartz glass cylinder deposition method aiming at the defects of the prior art, wherein the thermal field temperature distribution is uniform, the deposition quality is good and the process is stable.
The technical scheme of the deposition system adopted by the invention for solving the problems is as follows:
the device comprises a deposition cavity, wherein an upper rotary chuck and a lower rotary chuck are arranged in the deposition cavity, a blast lamp with an upper interval and a lower interval is arranged corresponding to the upper rotary chuck and the lower rotary chuck, the upper rotary chuck and the lower rotary chuck or the blast lamp are connected with an up-down moving device, one side of the deposition cavity is communicated with an air inlet cavity, and the other side of the deposition cavity is communicated with an air suction cavity.
According to the scheme, the middle part of the blast lamp is provided with the raw material gas nozzle, the raw material gas nozzle comprises a central hole raw material gas nozzle and 1-3 layers of annular raw material gas nozzles surrounding the central hole raw material gas nozzle, and the raw material gas nozzle is communicated with a raw material gas source.
According to the scheme, the 1-3 layers of annular raw material gas nozzles are simultaneously communicated with an inert gas source through a switching valve.
According to the scheme, the fuel gas nozzle is an annular fuel gas nozzle and is arranged on the periphery of the raw material gas nozzle, the annular fuel gas nozzle comprises a hydrogen nozzle and an oxygen nozzle, 1-2 layers of the hydrogen nozzle and the oxygen nozzle are respectively arranged, and the fuel gas nozzle is communicated with a fuel gas source.
According to the scheme, an annular inert gas nozzle is arranged between the raw material gas nozzle and the fuel gas nozzle, and the annular inert gas nozzle is communicated with an inert gas source.
According to the scheme, the gas ring nozzle is arranged on the periphery of the fuel gas nozzle, the gas ring nozzle is composed of annular holes or closely-spaced annular small holes, 1-2 layers of gas ring nozzles are arranged, gas is sprayed out of the gas ring nozzle to form a cylindrical gas curtain, and the combustion raw material reaction gas is covered in the cylindrical gas curtain.
According to the scheme, the raw material gas nozzle arranged in the middle of the blast lamp is a movable raw material gas nozzle, the rear end of the movable raw material gas nozzle is connected with the rotary supporting mechanism, and the rotary supporting mechanism drives the movable raw material gas nozzle to slowly rotate.
According to the scheme, the movable raw material gas nozzle is in a circular shaft shape, an annular hole is formed between the movable raw material gas nozzle and the inner hole of the blowtorch body through the connection support of the rotary support mechanism, and the annular hole forms an annular inert gas nozzle.
According to the scheme, the blast lamp is made of metal or alloy.
According to the scheme, the upper rotary baffle disc and the lower rotary baffle disc are correspondingly arranged on the upper rotary chuck and the lower rotary chuck.
According to the scheme, the air inlet cavity is positioned on one side of the back of the blast lamp, the front of the air inlet cavity is communicated with the deposition cavity, the rear of the air inlet cavity is connected with the sub air inlet cavities which are vertically separated, and an electric heating device is arranged at the air inlet of each sub air inlet cavity and used for heating the entering gas.
According to the scheme, the air inlet of the sub air inlet cavity is communicated with the gas filtering cavity, and a gas filter is arranged in the gas filtering cavity.
According to the scheme, the air suction cavity is positioned on one side of the front of the blast lamp, the front of the air suction cavity is communicated with the deposition cavity, the rear of the air suction cavity is connected with the sub air suction cavities which are vertically separated, the air outlet of each sub air suction cavity is connected with the air quantity regulating valve in series and used for regulating the flow of the extracted air, and the air outlet of each sub air suction cavity is communicated with the air suction pipeline.
According to the scheme, the number of the sub air inlet cavities is 6-12 corresponding to the number of the air inlet cavities, and the number of the sub air suction cavities is 6-12 corresponding to the number of the air suction cavities.
According to the scheme, the exhaust pipeline is connected with the tail gas recovery pipeline in parallel, a tail gas recovery pump is arranged in the tail gas recovery pipeline, and the other end of the tail gas recovery pipeline is communicated with the gas filter cavity, so that part of heat of the tail gas is recovered.
According to the scheme, the side walls on two sides of the deposition cavity are provided with guide fin devices capable of swinging up and down.
According to the scheme, the guide fin device comprises guide fins hinged with the side wall and arranged in an up-down parallel and spaced mode, the inner ends of the guide fins extend into the inner side of the deposition cavity, the outer ends of the guide fins are hinged with up-down moving swing rods, and the up-down moving swing rods are connected with a reciprocating driving mechanism.
The deposition method of the invention has the technical scheme that:
firstly, the deposition target rod is clamped on an upper rotary chuck and a lower rotary chuck, an air inlet cavity and an air suction cavity are opened, air inlet gas is heated, the air suction quantity is regulated, the deposition cavity reaches a preset temperature range and an air pressure range,
then the upper and lower rotary chucks are started to drive the deposition target rod to rotate, the up-down moving device is started to enable the upper and lower rotary chucks and the blast lamp to keep relatively up-down reciprocating movement, the blast lamp is ignited to enable the blast lamp to jet raw material gas, fuel gas and inert gas, and the raw material gas, the fuel gas and the inert gas are mixed and combusted to generate silicon dioxide reactant to deposit on the periphery of the target rod,
the device is characterized in that the gas ring nozzles of the blowlamps spray the cylindrical gas curtain heating gas, the temperature of the heating gas sprayed by each blowlamp is automatically regulated according to the temperature feedback of the spraying area, so that the temperatures of the upper and lower deposition areas of the target rod tend to be consistent, and the blowlamps continuously spray until the deposition is completed.
According to the scheme, the temperature range of the gas sprayed out of the gas ring nozzle is 25-500 ℃, the flow rate of the gas is 0.3-40 m/s, and the optimal flow rate is 1.0-20 m/s, and the flow rate can protect and restrict the reaction area of the silicon dioxide in the gas ring with stable gas flow, so that the silicon dioxide particles generated by spraying out of the burner opening are all in the gas field with stable gas flow until being deposited on the powder rod. The injected gas can be hot gas recovered from exhaust gas emission, clean air filtered by heating or inert gas (such as nitrogen), or combustion gas of oxyhydrogen or alkane oxygen.
According to the scheme, with the gradual increase of the deposition diameter of the target rod, 1-3 layers of annular raw material gas nozzles surrounding the central hole raw material gas nozzle are opened layer by layer on the basis of opening the central hole raw material gas nozzle in advance, the injection quantity of raw material gas is gradually increased, meanwhile, the 2 nd layer of fuel gas nozzle is opened, the injection quantity of fuel gas is gradually increased, and a coaxial jet flame is formed, so that the optimal collection rate and deposition rate are achieved.
According to the scheme, the coaxial jet flame axis speed attenuation formula is
Wherein the method comprises the steps of
Q i Mass flow kg/s, p for group i jet i Momentum flux Kg.m/s for the ith group of jets 2 ，a＝0.076，b＝0.147，u m Is the central jet velocity, u 0 Is the initial velocity of the central jet, d 0 Corresponding diameter, ρ is the gas density, and x is the distance from the orifice of the nozzle.
Preferably, the central jet velocity u reaches 30mm from the deposition target surface m At 15-90 m/s.
More preferably, the central jet velocity u reaches 30mm from the deposition target surface m At 25-80 m/s.
More preferably, the central jet velocity u reaches 30mm from the deposition target surface m At 35-70 m/s.
According to the scheme, when deposition is stable, the temperature below the target rod deposition area is lower, the temperature above the target rod deposition area is higher, and the temperature difference keeps stable trend, gas is sprayed through the gas ring nozzle, or the gas is sprayed through the gas ring nozzle and combined with the upper rotating baffle disc and the lower rotating baffle disc to carry out heat compensation, and the compensation mechanism is as follows: the length of the target rod deposition area is L, the lowest end of the target rod is taken as a starting point, and the length x (corresponding to the position of a blast lamp) is selected upwards:
(1) x is less than 0.6L, and the heat compensation formula is as follows:
qcomplement=e×x 2 -f*x+g
Wherein Q is the heat quantity to be compensated, and the unit is kw; e=6×10 -06 ～9*10 -06 ；f＝0.0366～0.0443；g＝57.708～59.055
Only the gas ring nozzle thermally compensates for temperature: qcomplement=9×10 -06 x 2 -0.0443x+57.708
The gas ring and the upper and lower rotary baffle plates thermally compensate the temperature: qcomplement=6×10 -06 x 2 -0.0366x+59.055
(2) L is more than x and is more than or equal to 0.6L, and heat compensation: : qcomplement=0.
According to the scheme, the sub air inlet cavity of the air inlet cavity automatically adjusts the air inlet temperature according to the temperature feedback of the separated deposition areas, so that the temperatures of the upper deposition area and the lower deposition area of the target rod further tend to be consistent. The temperature compensation of the air inlet cavity and the temperature compensation gas of the spray lamp gas ring nozzle are used together, so that the temperature of the powder rod surface tends to be consistent in the whole deposition process, and the powder rod surface is not influenced by the deposition time and the upper and lower parts of the deposition. In the initial stage of deposition, the temperatures of the rotary target rod and the deposition cavity tend to room temperature, the temperature of the air inlet cavity is compensated to 400 ℃, the upper part and the lower part of the air inlet cavity are the same, the gas temperature of a gas ring nozzle on a blowtorch is 800 ℃, and the surface temperature of the whole target rod is kept to be more than 500 ℃ and less than 1200 ℃; in the middle of deposition, the deposition reaction occurs, so that the temperature of a cavity rises, the chimney effect is obvious, the temperature compensation of an air inlet cavity is reduced from 400 ℃ to the bottom, the temperature gradually reduces from the bottom to the top, and meanwhile, the temperature compensation of a temperature compensation air ring is gradually reduced, and the surface temperature of the whole target rod is kept to be more than 500 ℃ and less than 1200 ℃; at the end of deposition, the temperature compensation of the air inlet cavity and the temperature compensation air ring on the blowtorch are heated firstly, the surface temperature of the whole target rod is kept to be more than 500 ℃ and less than 1200 ℃, then the temperature is gradually reduced, and the powder rod is annealed. By adopting the scheme, the temperature difference in the deposition process can be maintained at a certain level (+ -50 ℃), the density of the powder rod is consistent in the radial direction and the longitudinal direction, and the refractive index and the light level after sintering are consistent.
According to the scheme, the sub-exhaust cavities of the exhaust cavity can be used for adjusting the flow of the exhaust gas according to the injection quantity and the deposition quantity of the raw material gas through the air quantity adjusting valve, so that deposited dust can be timely pumped away.
According to the scheme, the tail gas recovery pump is started, so that part of tail gas is recovered to the gas filter cavity through the tail gas recovery pipeline, and part of heat of the tail gas is recovered.
The invention has the beneficial effects that: 1. the gas ring nozzle is arranged on the outermost ring of the spray lamp nozzle, the gas ring nozzle is communicated with a temperature-adjustable gas source, gas is sprayed out of the gas ring nozzle to form a cylindrical gas curtain, the gas curtain stabilizing the gas flow is utilized to replace a cover in front of the spray lamp, gas in a deposition area can be restrained in the gas ring, a stable gas flow field is provided for a reaction area of silicon dioxide, the reaction area is less influenced by temperature or gas flow, the disturbance of a chimney effect and other gas flows on the reaction deposition area can be avoided, and the consistency of the whole deposition process is ensured. Meanwhile, the temperature of the gas introduced into the gas ring can be gradually changed along with the deposition process, so that the temperature distribution of the upper and lower thermal fields of the deposition area is uniform, and the deposition quality is improved. 2. The upper and lower rotary baffle disc structures are arranged to compensate the jet temperature of the gas ring, so that the temperature distribution of the upper and lower thermal fields is more uniform. 3. The multi-layer annular raw material gas nozzle, namely the multi-layer material pipe structure, is adopted, along with the increase of the diameter of the deposited powder rod, raw material gas is introduced into the material pipe layer by layer, so that the formed diameter of the ejected material and the powder rod is matched, the concentration of SiO2 particles in the combustion process of the blast lamp can be increased by adopting multi-layer feeding, the SiO2 impinging on the surface of the powder rod is more uniform, and the optimal collection rate and the deposition rate of the large-size quartz glass powder rod can be realized. 4. The movable raw material gas nozzle is arranged, so that the whole multi-layer material pipe structure rotates relative to the blowtorch, the eccentric influence of gaps between the material pipe and the inert gas nozzle or between the material pipe and the fuel gas nozzle is reduced, dust accumulation at the part of the nozzle is greatly reduced by utilizing rotation, and therefore, crystallization, particularly dust blocking crystallization phenomenon occurring in the later deposition stage of a large powder rod, is reduced. The blast lamp of the invention can be a metal blast lamp, has high mechanical strength, good wear resistance and high manufacturing precision, and is convenient for production and maintenance. 5. The air inlet cavity is arranged into a sub air inlet cavity structure which is vertically separated, the temperature of gas fed into different areas in the deposition cavity can be regulated and controlled, the different deposition areas are heated and regulated according to different conditions, the temperature regulating area is larger, and the upper temperature and the lower temperature of the whole deposition cavity, especially the powder rod deposition area, can be distributed more uniformly and consistently, so that the deposition quality of the OVD process is effectively improved. 6. The arrangement of the sub-exhaust cavity is favorable for the uniformity and smoothness of the air flow field, and simultaneously promotes the uniformity of the temperature field, so that dust which is discharged from the burner and is not collected on the powder rod is prevented from forming vortex before the powder rod and the exhaust pipe orifice, and is deposited on the powder rod again to form bulges, so that the powder rod is scrapped. Install the tail gas recovery pipeline and make partial tail gas retrieve to the gas filter chamber for partial heat of higher temperature tail gas obtains recycle, realizes energy-conserving solar terms's effect.
Drawings
Fig. 1 is a schematic general structure of an embodiment of the present invention.
Fig. 2 is a schematic front view of a torch according to an embodiment of the present invention.
Fig. 3 is a schematic side view of a torch according to an embodiment of the present invention.
FIG. 4 is a schematic diagram of the burner gas ring airflow restriction of one embodiment of the present invention.
Fig. 5 is a schematic view of the structure of the upper and lower rotating baffle plates and guide fins according to one embodiment of the present invention.
Fig. 6 and 7 are OMCTS profiles of a single-layer tube and a double-layer tube, respectively, simulated by the present invention.
FIGS. 8 and 9 are graphs of SiO2 distribution of a single-layer tube and a double-layer tube, respectively, simulated by the present invention
FIG. 10 is a graph showing the temperature distribution of a single torch sprayed on a powder bar in example 1 and comparative example 1 of the present invention.
FIG. 11 is a graph showing the temperature distribution of the longitudinal surfaces of the powder bars of examples 1 and 3 according to the present invention and comparative example 1.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The deposition system comprises a box-type deposition cavity 7, wherein an upper rotary chuck 8 and a lower rotary chuck 15 are arranged in the deposition cavity, the upper rotary chuck and the lower rotary chuck clamp deposition target rods, an upper rotary baffle disc 9 and a lower rotary baffle disc 14 are correspondingly arranged on the upper rotary chuck and the lower rotary chuck, and the upper rotary baffle disc and the lower rotary baffle disc are positioned at the upper end and the lower end of the deposition target rods and rotate together with the upper rotary chuck, the lower rotary chuck and the deposition target rods. The upper rotary chuck and the lower rotary chuck are provided with a blast lamp 6 which is vertically spaced, the blast lamp is connected with the upper reciprocating device and the lower reciprocating device, the blast lamp comprises a raw material gas nozzle and a fuel gas nozzle, the raw material gas nozzle comprises a central hole raw material gas nozzle 19, a middle layer annular raw material gas nozzle 20 surrounding the central hole raw material gas nozzle and an outer layer annular raw material gas nozzle 21, the raw material gas nozzle is communicated with a raw material gas source, and the annular raw material gas nozzle is simultaneously communicated with an inert gas source through a conversion (switching) valve. The raw material gas nozzle arranged in the middle of the blast lamp is a movable raw material gas nozzle, the rear end of the movable raw material gas nozzle is connected with a rotary supporting mechanism, and the rotary supporting mechanism drives the movable raw material gas nozzle to slowly rotate. The rotary supporting mechanism comprises a fixed seat 29 connected with the blowtorch body 18, a driving shaft 30 is arranged in the fixed seat, one end of the driving shaft is connected with a driving device 28, the other end of the driving shaft is connected with a movable raw material gas nozzle through a connecting disc 25 and a sealing ring 31, the movable raw material gas nozzle is in a circular shaft shape, the rear end of the movable raw material gas nozzle is a shaft shoulder with larger diameter, through holes in the movable raw material gas nozzle, which are provided with all layers of raw material gas nozzles, are in butt joint with all material through holes in the driving shaft, all the material through holes are in butt joint with rotary valve ports 27 arranged on the fixed seat, and are communicated with a raw material gas source. The movable raw material gas nozzle is connected with the inner hole of the blowtorch body through the rotary supporting mechanism to form an annular hole, the annular hole forms an annular inert gas nozzle 22, and the inert gas nozzle is communicated with an inert gas source. The fuel gas nozzle 24 is an annular fuel gas nozzle provided withThe annular fuel gas nozzle comprises a hydrogen nozzle and an oxygen nozzle, wherein the hydrogen nozzle and the oxygen nozzle are respectively provided with 2 layers, and the fuel gas nozzle is communicated with a fuel gas source. The outermost ring of the burner nozzle is provided with a gas ring nozzle 23, the gas ring nozzle is arranged on the periphery of the fuel gas nozzle, the gas ring nozzle is composed of annular holes or closely spaced annular small holes, gas is sprayed out from the gas ring nozzle to form a cylindrical gas curtain, the reaction gas of the combustion raw materials is covered in the cylindrical gas curtain, and the gas ring nozzle is communicated with the temperature-adjustable gas source 16. The temperature of the gas introduced into the gas ring nozzle can be gradually changed along with the deposition process, the gas can be heated by the heat recovered and treated in the exhaust emission, the gas in the electrically heated gas ring can reach the set temperature, and the high-temperature gas (the self gas can be combustible gas such as hydrogen, oxygen, alkane gas and the like) can be obtained through the self gas reaction. The gas ring nozzle, the fuel gas nozzle and the inert gas nozzle are matched and connected with the valve port 26 on the nozzle body through the through holes. The blast lamp is made of metal or alloy. FIGS. 6 and 7 simulate the single and double tube OMCTS (octamethyl cyclotetrasiloxane, C) 8 H 24 O 4 Si 4 D4) distribution comparison graph, FIG. 6 is a graph of OMCTS concentration at the initial stage of powder rod deposition, when the powder rod is long, the second layer material pipe is gradually added with OMCTS, and the state of FIG. 7 is switched, and the multi-layer feeding mode increases the feeding amount of OMCTS, so that the deposition rate is further improved. Fig. 8 and 9 are graphs showing SiO2 distribution of the single-layer tube and the double-layer tube, wherein fig. 8 is a graph showing SiO2 concentration at the initial stage of powder rod deposition, when the powder rod is long, OMCTS is gradually added into the second-layer tube, the state of fig. 9 is switched, the concentration of SiO2 particles becomes high in the combustion process of the burner after multi-layer feeding is adopted, and the SiO2 impinging on the surface of the powder rod is more uniform, so that the collection rate is improved. One side of the deposition cavity 7 is communicated with an air inlet cavity, the air inlet cavity is positioned on one side of the back of the blast lamp, the front 5 of the air inlet cavity is communicated with the deposition cavity, the back of the air inlet cavity is connected with sub-air inlet cavities 4 which are separated up and down, an electric heating device 3 is arranged at the air inlet of each sub-air inlet cavity and used for heating the inlet gas, and the air inlet of the sub-air inlet cavity is communicated with the deposition cavityThe gas filter cavity 1 is communicated, and a gas filter 2 is arranged in the gas filter cavity. The other side of sedimentation chamber is linked together with the convulsions chamber, the convulsions chamber be located the preceding one side of blowtorch, the preceding 10 of convulsions chamber link up with the sedimentation chamber mutually, the sub convulsions chamber 11 of upper and lower partition are linked up at the back of convulsions chamber, the air outlet department of every sub convulsions chamber concatenates air regulation valve 13 for to the regulation of extraction gas flow, the air outlet of sub convulsions chamber be linked together with convulsions pipeline 12. The exhaust pipeline is connected with a tail gas recovery pipeline 17 in parallel, a tail gas recovery pump 17a is arranged in the tail gas recovery pipeline, and the other end of the tail gas recovery pipeline is communicated with the gas filter cavity, so that part of heat of the tail gas is recovered. The exhaust pipeline performs exhaust by utilizing negative pressure, and tail gas is recovered and controlled by a tail gas recovery pump, so that energy conservation and emission reduction are realized. The side walls on two sides of the deposition cavity are provided with guide fin devices capable of swinging up and down, the guide fin devices comprise guide fins 32 which are hinged with side wall hinges 34 and are arranged at intervals in an up-down parallel mode, the outer ends of the guide fins are hinged with up-down moving swinging rods 33, the inner ends of the guide fins extend into the inner side of the deposition cavity and extend for a certain length, and the up-down moving swinging rods are connected with a reciprocating driving mechanism.
Examples of the deposition powder rod of the present invention are as follows:
example 1
The blast lamp adopts a gas ring nozzle, a layer of raw material gas nozzle, an inert gas nozzle and a layer of fuel gas nozzle, wherein the gas ring nozzle, the layer of raw material gas nozzle, the inert gas nozzle and the layer of fuel gas nozzle are in a movable raw material gas nozzle structure: the gas ring nozzle is formed by a circular ring, the narrow slit width of the circular ring is 2mm, the gas is supplied by nitrogen, the nitrogen in the gas ring is heated and maintained at 100 ℃ by electric heating in the initial deposition stage, the exhaust temperature of tail gas reaches more than 150 ℃, the heated nitrogen recycled in the exhaust gas emission exceeds 120 ℃, but is lower than 480 ℃, and the gas flow rate of the nitrogen in the whole deposition stage is 20m/s. Adopting two layers of raw material gas nozzles, wherein the diameter of the central hole raw material nozzle hole is 2mm, and the wall thickness is 0.3mm; the diameter of the outer annular raw material nozzle is 4.5mm, wherein the flow rate of the strip gas in the raw material nozzle is 35m/s, and the strip gas is nitrogen gas with octamethyl cyclotetrasiloxane. In the beginning of deposition, the central nozzle is filled with a material carrying gas (the gas flow rate is 35 m/s), and the outer annular raw material nozzle is filled with an inert gas (the gas flow rate is 15 m/s); the diameter of the powder rod reaches more than 250mm, the outer annular raw material nozzle is used for switching inert gas into strip gas (the gas flow rate is 35 m/s), and the diameter of the powder rod is finally deposited to 500mm. The outer layer of the raw material gas nozzle is sequentially provided with an inert gas nozzle and a fuel gas nozzle, nitrogen is introduced into the inert gas nozzle 5, and the gas flow rate is 15m/s; the fuel gas nozzle 7 is divided into two layers, a hydrogen nozzle is arranged close to the inert gas nozzle, an oxygen nozzle is arranged close to the outside, and the flow rates of the hydrogen nozzle and the oxygen nozzle are 15m/s. Through testing, the deposition rate of the obtained powder rod is 240g/min, and the collection rate is 75.8%. The rotating speed of the movable raw material gas nozzle is 2r/min, and the production statistics deposits 203 powder rods to discard the powder rods because of the accumulation and crystallization of the dust at the material port.
Example 2
The blast lamp adopts 2 layers of gas ring spouts, 3 layers of raw material gas spouts, inert gas spouts and 2 layers of fuel gas spouts, and the raw material gas spouts are movable raw material gas spout structures: the gas ring nozzle consists of two circles of closely-spaced round holes with the diameter of 1mm, hydrogen is adopted in the outer ring, oxygen is adopted in the inner ring, the oxygen volume is consumed per minute/the hydrogen volume is consumed per minute=1:2, and the gas flow rates of the hydrogen and the oxygen are 35m/s. Adopting three layers of material pipes, wherein the diameter of a central hole raw material nozzle hole is 2.5mm, and the wall thickness is 0.2mm; the diameter of the middle annular raw material nozzle is 5mm, and the wall thickness is 0.2mm; the diameter of the outer annular raw material nozzle is 8mm, and the wall thickness is 0.2mm. The raw material gas is helium gas with silicon tetrachloride. In the beginning of deposition, the central hole nozzle is used as raw material gas (the gas flow rate is 35 m/s), and inert gas (the gas flow rate is 15 m/s) is introduced into the middle and outer layer annular raw material nozzles; the diameter of the powder rod reaches more than 300mm, the inert gas is switched into raw material gas (the gas flow rate is 35 m/s) by the outer layer material nozzle, the gas flow rate of the central material nozzle is increased to 45m/s, and the inert gas (the gas flow rate is 15 m/s) is introduced by the middle layer material nozzle; the diameter of the powder rod reaches more than 500mm, the inert gas is switched into the strip gas (the gas flow rate is 35 m/s) by the middle layer material nozzle, the gas flow rate of the central material nozzle is increased to 50m/s, and the gas flow rate of the middle layer material nozzle is 45m/s; the diameter of the final powder rod reaches 750mm. The outer layer of the raw material gas nozzle is sequentially provided with an inert gas nozzle and a fuel gas nozzle, nitrogen is introduced into the inert gas nozzle, and the gas flow rate is 15m/s; the fuel gas nozzle is divided into two layers, an oxygen pipe is arranged close to the inert gas nozzle, a hydrogen nozzle is arranged close to the outside, and the flow rates of the hydrogen nozzle and the oxygen nozzle are 25m/s. Finally, the deposition rate of the powder rod obtained by testing is 220g/min, and the collection rate is 72.5%. The rotating speed of the movable raw material gas nozzle is 1r/min, and 196 powder rods are deposited by production statistics and are scrapped because of the accumulation and crystallization of dust at the material port.
Example 3
In addition to the above, the upper and lower rotating discs are correspondingly installed on the upper and lower rotating chucks, the upper and lower rotating discs are located at the upper and lower ends of the deposition powder rod, and rotate together with the upper and lower rotating chuck dust collector target rods, and the upper and lower rotating discs are provided to compensate the heat of the gas ring spraying temperature, so that the upper and lower thermal field temperature distribution is more uniform, as shown in fig. 11.
Comparative example 1
The blast lamp adopts 60mm long glass cover and a layer of raw material gas nozzle, and the raw material gas nozzle does not rotate: a layer of material pipe is adopted, the diameter of a central material nozzle is 3.5mm, wherein the flow rate of raw material gas in a material pipe hole is 35m/s, and the raw material gas is nitrogen gas with octamethyl cyclotetrasiloxane. The outer layer of the raw material gas nozzle is sequentially provided with an inert gas nozzle and a fuel gas nozzle, nitrogen is introduced into the inert gas nozzle, and the gas flow rate is 15m/s; the fuel gas nozzle 7 is divided into two layers, a hydrogen nozzle is arranged next to the inert gas nozzle, an oxygen nozzle is arranged next to the inert gas nozzle, the flow rates of the hydrogen nozzle and the oxygen nozzle are 15m/s, and the diameter of the powder rod is deposited to 500mm. The powder rod obtained by testing has the deposition rate of 180g/min and the collection rate of 65.8 percent.
And continuously producing and counting 32 deposited powder rods, and scrapping the powder rods because of dust accumulation and crystallization at a material opening.
FIG. 10 shows a graph of the temperature distribution of a single burner on a powder rod when the diameter of the powder rod is 245mm, wherein the gas ring is adopted in comparative example 1, the glass cover with the length of 60mm is adopted in comparative example 1, and the gas ring can stabilize the reaction gas flow sprayed by the burner and slow down the chimney effect compared with the glass cover, so that the temperature on the powder rod in example 1 tends to be more uniform compared with that in comparative example 1, and the dust collection rate and the deposition rate are improved.
FIG. 11 is a graph comparing comparative example 1, example 1 and example 3, example 1 uses a gas ring, example 3 uses a gas ring and an upper and lower rotating baffle plate, both of which are temperature distribution diagrams of the powder rod along the longitudinal direction when the diameter of the powder rod is 245mm, and the gas ring can stabilize the reaction gas flow sprayed by a blast lamp more than a glass cover and slow down the chimney effect, so that the temperature on the powder rod in example 1 tends to be more uniform than that in comparative example 1; the upper and lower rotary baffle plates are added, so that the temperature distribution tends to be more uniform.
Claims (24)
1. The deposition system of the quartz glass cylinder comprises a deposition cavity, wherein an upper rotary chuck and a lower rotary chuck are arranged in the deposition cavity, a blast lamp with an upper interval and a lower interval is arranged corresponding to the upper rotary chuck and the lower rotary chuck, the upper rotary chuck and the lower rotary chuck or the blast lamp are connected with an up-down moving device, one side of the deposition cavity is communicated with an air inlet cavity, and the other side of the deposition cavity is communicated with an air suction cavity; the gas ring nozzle is arranged at the periphery of the fuel gas nozzle, the gas ring nozzle is formed by annular holes or closely spaced annular small holes; the air inlet cavity is positioned at one side of the back of the blast lamp, the front of the air inlet cavity is communicated with the deposition cavity, the rear of the air inlet cavity is connected with sub air inlet cavities which are separated up and down, and a heating device is arranged at the air inlet of each sub air inlet cavity and used for heating the entering gas; the air suction cavity is positioned on one side of the front of the blast lamp, the front of the air suction cavity is communicated with the deposition cavity, the rear of the air suction cavity is connected with sub air suction cavities which are vertically separated, an air outlet of each sub air suction cavity is connected with an air quantity regulating valve in series and used for regulating the flow of the extracted air, and an air outlet of each sub air suction cavity is communicated with an air suction pipe.
2. The quartz glass cylinder deposition system of claim 1, wherein a source gas orifice is provided in the middle of the torch, the source gas orifice comprising a central orifice source gas orifice and 1-3 annular layers of source gas orifices surrounding the central orifice source gas orifice, the source gas orifice being in communication with a source gas source.
3. A quartz glass cylinder deposition system as in claim 2 wherein said 1-3 annular feed gas jets are simultaneously in communication with an inert gas source through a diverter valve.
4. The quartz glass cylinder deposition system of claim 1 or 2, wherein the fuel gas nozzle is an annular fuel gas nozzle, and is disposed at the periphery of the raw material gas nozzle, the annular fuel gas nozzle comprises a hydrogen nozzle and an oxygen nozzle, the hydrogen nozzle and the oxygen nozzle are respectively provided with 1-2 layers, and the fuel gas nozzle is communicated with the fuel gas source.
5. A quartz glass cylinder deposition system according to claim 1 or 2, characterized in that an annular inert gas nozzle is arranged between the feed gas nozzle and the fuel gas nozzle, said annular inert gas nozzle being in communication with an inert gas source.
6. The quartz glass cylinder deposition system of claim 2, wherein the raw material gas nozzle provided in the middle of the torch is a movable raw material gas nozzle, the rear end of the movable raw material gas nozzle is connected with a rotary supporting mechanism, and the rotary supporting mechanism drives the movable raw material gas nozzle to rotate slowly.
7. The quartz glass cylinder deposition system of claim 6, wherein the movable feed gas nozzle is in the shape of a circular shaft, and an annular aperture is formed between the support and the inner hole of the burner body by the coupling of the rotary support mechanism, said annular aperture constituting the annular inert gas nozzle.
8. A deposition system for a cylindrical body of quartz glass according to claim 1 or 2, characterized in that the burner is made of metal or alloy.
9. A quartz glass cylinder deposition system according to claim 1 or 2, wherein upper and lower rotary shutters are provided on the upper and lower rotary chucks, respectively.
10. A quartz glass cylinder deposition system according to claim 1 or 2, wherein the inlet of the sub-chamber is in communication with a gas filter chamber in which a gas filter is disposed.
11. The quartz glass cylinder deposition system according to claim 1 or 2, wherein the number of the sub air intake chambers is 6-12 corresponding to the number of the air intake chambers, and the number of the sub air exhaust chambers is 6-12 corresponding to the number of the air exhaust chambers.
12. The quartz glass cylinder deposition system according to claim 1 or 2, wherein the exhaust pipe is connected with a tail gas recovery pipe, a tail gas recovery pump is arranged in the tail gas recovery pipe, and the other end of the tail gas recovery pipe is communicated with the gas filter cavity, so that part of heat of the tail gas is recovered.
13. A quartz glass cylinder deposition system according to claim 1 or 2, characterized in that the side walls on both sides of the deposition chamber are provided with guide fin means which can swing up and down.
14. The quartz glass cylinder deposition system of claim 13, wherein the guide fin assembly comprises guide fins hinged to the side walls in parallel and spaced apart from each other, the outer ends of the guide fins being hinged to an up-and-down movable rocker, the up-and-down movable rocker being connected to a reciprocating drive mechanism.
15. A method for depositing a quartz glass cylinder using a deposition system according to any of the preceding claims 1-14,
firstly, the deposition target rod is clamped on an upper rotary chuck and a lower rotary chuck, an air inlet cavity and an air suction cavity are opened, air inlet gas is heated, the air suction quantity is regulated, the deposition cavity reaches a preset temperature range and an air pressure range,
then the upper and lower rotary chucks are started to drive the deposition target rod to rotate, the up-down moving device is started to enable the upper and lower rotary chucks and the blast lamp to keep relatively up-down reciprocating movement, the blast lamp is ignited to enable the blast lamp to jet raw material gas, fuel gas and inert gas, and the raw material gas, the fuel gas and the inert gas are mixed and combusted to generate silicon dioxide reactant to deposit on the periphery of the target rod,
the device is characterized in that the gas ring nozzles of the blowlamps spray the cylindrical gas curtain heating gas, the temperature of the heating gas sprayed by each blowlamp is automatically regulated according to the temperature feedback of the spraying area, so that the temperatures of the upper and lower deposition areas of the target rod tend to be consistent, and the blowlamps continuously spray until the deposition is completed.
16. The method for depositing a cylindrical body of quartz glass according to claim 15, wherein the gas sprayed from the gas ring nozzle has a temperature in the range of 25 to 500 ℃ and a flow rate of 0.3 to 40m/s, the flow rate being capable of restraining the reaction zone protection of the silica in the gas ring of the stable gas flow so that the silica particles generated from the burner port are in the gas field of the stable gas flow until deposited on the soot rod.
17. The method for depositing a quartz glass cylinder according to claim 15 or 16, wherein 1 to 3 layers of annular raw material gas ports surrounding the central hole raw material gas port are opened layer by layer on the basis of the preceding opening of the central hole raw material gas port with the gradual increase of the deposition diameter of the target rod, the injection amount of the raw material gas is gradually increased, and simultaneously the 2 nd layer of fuel gas ports are opened, the injection amount of the fuel gas is gradually increased, so that a coaxial jet flame is formed.
18. The method for depositing a quartz glass cylinder as defined in claim 17, wherein
The coaxial jet flow flame axis speed attenuation formula is
Wherein the method comprises the steps of
Q i Mass flow kg/s, p for group i jet i Momentum flux Kg.m/s for the ith group of jets 2 ，a＝0.076，b＝0.147，u m Is the central jet velocity, u 0 Is the initial velocity of the central jet, d 0 Corresponding diameter, ρ is gas density, x is distance from the orifice of the material tube,
the central jet velocity u reaching 30mm from the deposition target surface m At 15-90 m/s.
19. The method for depositing a cylindrical body of quartz glass according to claim 15 or 16, wherein the lower temperature is lower and the upper temperature is higher and the temperature difference maintains a steady trend, and the heat compensation is performed by injecting gas through the gas ring or by combining the gas ring injection gas with the upper and lower rotary baffles by the following mechanism: the length of the target rod deposition area is L, the lowest end of the target rod is taken as a starting point, and the length x (corresponding to the position of a blast lamp) is selected upwards:
(1) x <0.6L, heat compensation formula:
qcomplement=e×x 2 -f*x+g
Wherein Q is the heat quantity to be compensated, and the unit is kw; e=6×10 -06 ～9*10 -06 ；f＝0.0366～0.0443；g＝57.708～59.055
(2) L > x is greater than or equal to 0.6L, and heat compensation: qcomplement=0.
20. The method of depositing a cylinder of quartz glass as recited in claim 19, wherein when x <0.6L, only the gas ring thermally compensates for temperature, the thermal compensation formula:
qcomplement=9×10 -06 x 2 -0.0443x+57.708。
21. The method for depositing a cylindrical body of quartz glass according to claim 19, wherein when x <0.6L, the gas ring + upper and lower rotating baffles thermally compensates for temperature, the thermal compensation formula:
qcomplement=6×10 -06 x 2 -0.0366x+59.055。
22. The deposition method of quartz glass cylinder according to claim 15 or 16, wherein the sub-air inlet chamber of the air inlet chamber automatically adjusts the air inlet temperature according to the temperature feedback of the separated deposition areas, so that the temperatures of the upper deposition area and the lower deposition area of the target rod further tend to be consistent; the temperature compensation of the air inlet cavity and the temperature compensation gas of the spray lamp gas ring nozzle are used together, so that the temperature of the powder rod surface tends to be consistent in the whole deposition process, and the powder rod surface is not influenced by the deposition time and the upper and lower parts of the deposition; in the initial stage of deposition, the temperatures of the rotary target rod and the deposition cavity tend to room temperature, the temperature of the air inlet cavity is compensated to 400 ℃, the upper part and the lower part of the air inlet cavity are the same, the gas temperature of a gas ring nozzle on a blowtorch is 800 ℃, and the surface temperature of the whole target rod is kept to be more than 500 ℃ and less than 1200 ℃; in the middle of deposition, the deposition reaction occurs, so that the temperature of a cavity rises, the chimney effect is obvious, the temperature compensation of an air inlet cavity is reduced from 400 ℃ to the bottom, the temperature gradually reduces from the bottom to the top, and meanwhile, the temperature compensation of a temperature compensation air ring is gradually reduced, and the surface temperature of the whole target rod is kept to be more than 500 ℃ and less than 1200 ℃; at the end of deposition, the temperature compensation of the air inlet cavity and the temperature compensation air ring on the blast lamp are heated firstly, the surface temperature of the whole target rod is kept to be more than 500 ℃ and less than 1200 ℃, then the temperature is gradually reduced, the powder rod is annealed, and the temperature difference in the deposition process is maintained to be +/-50 ℃.
23. The method for depositing a quartz glass cylinder according to claim 15 or 16, wherein the sub-suction chambers of the suction chamber are adapted to control the flow rate of the suction gas by the air volume control valve according to the jet amount and the deposition amount of the raw material gas, thereby ensuring timely removal of the deposited dust.
24. A method of depositing a cylindrical body of quartz glass as claimed in claim 15 or 16, wherein the exhaust gas recovery pump is turned on to recover a portion of the exhaust gas to the gas filter chamber via the exhaust gas recovery conduit, such that a portion of the heat of the exhaust gas is recovered.
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| CN202310137731.XA CN116217067B (en) | 2023-02-17 | 2023-02-17 | Deposition system and method for quartz glass cylinder |
| PCT/CN2024/074734 WO2024169598A1 (en) | 2023-02-17 | 2024-01-30 | System and method for depositing quartz glass cylinder |
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