CN116034485A - 一种衬底及功率放大器件 - Google Patents

一种衬底及功率放大器件 Download PDF

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CN116034485A
CN116034485A CN202080103586.8A CN202080103586A CN116034485A CN 116034485 A CN116034485 A CN 116034485A CN 202080103586 A CN202080103586 A CN 202080103586A CN 116034485 A CN116034485 A CN 116034485A
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substrate
epitaxial layer
epitaxial
layer
resistivity
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CN202080103586.8A
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CN116034485A8 (zh
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胡彬
段焕涛
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN116034485A publication Critical patent/CN116034485A/zh
Publication of CN116034485A8 publication Critical patent/CN116034485A8/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT

Abstract

本申请的实施例提供一种衬底及功率放大器件，涉及半导体技术领域，实现了一种新型的复合衬底，降低了晶体管对碳化硅半导体衬底的依赖，有效控制了成本。该衬底用于晶体管，其中晶体管的外延结构生成于衬底上，衬底包括：基底以及形成于基底上的第一外延层，第一外延层为半导体；其中，基底以及第一外延层包括SiC材料；第一外延层采用过渡金属掺杂。

Description

PCT国内申请，说明书已公开。

Claims (22)

  1. PCT国内申请，权利要求书已公开。
CN202080103586.8A 2020-08-28 2020-08-28 一种衬底及功率放大器件 Pending CN116034485A (zh)

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PCT/CN2020/112292 WO2022041157A1 (zh) 2020-08-28 2020-08-28 一种衬底及功率放大器件

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CN116034485A true CN116034485A (zh) 2023-04-28
CN116034485A8 CN116034485A8 (zh) 2023-07-04

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JP (1) JP2023539318A (zh)
CN (1) CN116034485A (zh)
WO (1) WO2022041157A1 (zh)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233391A (ja) * 1998-02-12 1999-08-27 Nippon Telegr & Teleph Corp <Ntt> 結晶基板とそれを用いた半導体装置およびその製法
JP5436819B2 (ja) * 2008-08-04 2014-03-05 日本碍子株式会社 高周波用半導体素子、高周波用半導体素子形成用のエピタキシャル基板、および高周波用半導体素子形成用エピタキシャル基板の作製方法
SE1430022A1 (sv) * 2013-07-01 2015-01-02 Billiga semi-isolerande SiC-substrat
JP6584253B2 (ja) * 2015-09-16 2019-10-02 ローム株式会社 ＳｉＣエピタキシャルウェハ、ＳｉＣエピタキシャルウェハの製造装置、ＳｉＣエピタキシャルウェハの製造方法、および半導体装置
CN205194699U (zh) * 2015-11-23 2016-04-27 中山德华芯片技术有限公司 一种Si基GaN Bi-HEMT芯片
US11094835B2 (en) * 2017-03-28 2021-08-17 Mitsubishi Electric Corporation Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device
JP7009147B2 (ja) * 2017-09-29 2022-01-25 富士電機株式会社 炭化珪素半導体基板、炭化珪素半導体基板の製造方法および炭化珪素半導体装置
CN107919392A (zh) * 2017-11-09 2018-04-17 中国电子科技集团公司第五十五研究所 氮化镓基氮化物高电子迁移率晶体管外延结构及生长方法
JP6898222B2 (ja) * 2017-12-27 2021-07-07 エア・ウォーター株式会社 化合物半導体基板
JP7004586B2 (ja) * 2018-01-30 2022-01-21 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
US20200266292A1 (en) * 2019-02-19 2020-08-20 AZ Power, Inc Composite substrates of conductive and insulating or semi-insulating silicon carbide for gallium nitride devices

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EP4195239A1 (en) 2023-06-14
CN116034485A8 (zh) 2023-07-04
JP2023539318A (ja) 2023-09-13
WO2022041157A1 (zh) 2022-03-03
EP4195239A4 (en) 2023-09-27

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Correction item: PCT international application to national stage day

Correct: 2023.02.28

False: 2023.02.27

Number: 17-02

Volume: 39

Correction item: PCT international application to national stage day

Correct: 2023.02.28

False: 2023.02.27

Number: 17-02

Page: The title page

Volume: 39