CN116884998A - 用于提升ALGaN/GaN界面处二维电子气的外延结构 - Google Patents
用于提升ALGaN/GaN界面处二维电子气的外延结构 Download PDFInfo
- Publication number
- CN116884998A CN116884998A CN202310668778.9A CN202310668778A CN116884998A CN 116884998 A CN116884998 A CN 116884998A CN 202310668778 A CN202310668778 A CN 202310668778A CN 116884998 A CN116884998 A CN 116884998A
- Authority
- CN
- China
- Prior art keywords
- layer
- gan
- algan
- electron gas
- dimensional electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005533 two-dimensional electron gas Effects 0.000 title claims abstract description 34
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 32
- 238000002955 isolation Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000011084 recovery Methods 0.000 claims abstract description 13
- 238000003780 insertion Methods 0.000 claims abstract description 9
- 230000037431 insertion Effects 0.000 claims abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 230000001737 promoting effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 56
- 239000012535 impurity Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
本申请公开了一种用于提升AlGaN/GaN界面处二维电子气的外延结构，包括：衬底；AlGaN层，位于所述衬底的上表面；GaN恢复层，位于所述AlGaN层的上表面；非故意C掺杂GaN高阻层，位于所述GaN恢复层的上表面；n‑GaN沟道层，位于所述非故意C掺杂GaN高阻层的上表面；AlN插入层，位于所述n‑GaN沟道层的上表面；未掺杂的Al0.25Ga0.75N隔离层，位于所述AlN插入层的上表面；Si掺杂的n‑Al0.25Ga0.75N层，位于所述Al0.25Ga0.75N隔离层的上表面；AlN帽层，位于所述n‑Al0.25Ga0.75N层的上表面。本申请的外延结构通过Al0.25Ga0.75N隔离层和n‑Al0.25Ga0.75N层的设置，能够有效的提升二维电子气的迁移率。
Description
技术领域
本发明涉及半导体领域，具体涉及用于提升AlGaN/GaN界面处二维电子气的外延结构。
背景技术
以SiC和GaN为代表的第三代半导体材料具有更宽的禁带宽度、更高的击穿电场、更高的热导率、更大的电子饱和速度以及更高的抗辐射能力，更适合制作高温、高频、抗辐射及大功率器件。氮化镓(GaN)是极其稳定的化合物，又是坚硬和高熔点材料，熔点为1700℃。GaN具有高的电离度，在Ⅲ-Ⅴ族化合物中是最高的(0.5或0.43)。在大气压下，GaN晶体一般是六方纤锌矿结构，因为其硬度大，所以它又是一种良好的涂层保护材料。GaN具有出色的击穿能力、更高的电子密度和电子速度以及更高的工作温度。
基于良好的物化性能，GaN基功率器件被广泛应用于电力电子和微波射频领域。此外，由于III族氮化物材料固有的极化效应，在AlGaN/GaN异质结界面由于自发极化和压电极化的存在，会在界面处形成一个三角形的势垒，导致在界面处存在高浓度、高迁移率的二维电子气(2DEG)。基于良好的物化性能和快速响应等特点，GaN基功率器件被广泛应用于电力电子和微波射频领域。此外，基于AlGaN/GaN HEMT紫外光电探测器通常具有大光电流、高光响应度和类似晶体管的电学和光学性能，在紫外成像和光通信领域具有巨大的潜力。
目前，通过MOCVD外延非故意掺杂的GaN中因为含有施主杂质O、Si、N空位而呈n型GaN。此外，使用MOCVD外延GaN时由石墨盘和MO源引入的两性杂质C既可作取代Ga作为浅施主杂质也可取代N作为浅受主杂质，为了降低GaN基功率器件如AlGaN/GaN高电子迁移率晶体管(HEMT)在高击穿电压下的泄露电流，通常需要在器件结构下方外延一层半绝缘或具有高阻态的GaN。传统的做法是使用C掺杂或者Fe掺杂，但这种传统做法会同时造成后续不掺杂GaN层的晶体质量降低，以及表面平整度也会降低，AlGaN和GaN间的极化效应弱，2DEG导通电阻偏高，从整体上影响GaN晶体质量。
发明内容
本发明针对上述问题，提出了一种用于提升AlGaN/GaN界面处二维电子气的外延结构，以实现降低导通电阻的目的。
本发明采取的技术方案如下：
一种用于提升AlGaN/GaN界面处二维电子气的外延结构，包括：
衬底；
AlGaN层，位于所述衬底的上表面；
GaN恢复层，位于所述AlGaN层的上表面；
非故意C掺杂GaN高阻层，位于所述GaN恢复层的上表面；
n-GaN沟道层，位于所述非故意C掺杂GaN高阻层的上表面；
AlN插入层，位于所述n-GaN沟道层的上表面；
未掺杂的Al0.25Ga0.75N隔离层，位于所述AlN插入层的上表面；
Si掺杂的n-Al0.25Ga0.75N层，位于所述Al0.25Ga0.75N隔离层的上表面；
AlN帽层，位于所述n-Al0.25Ga0.75N层的上表面。
AlGaN层用来阻挡蓝宝石衬底的O扩散；非故意C掺杂GaN高阻层是为形成高阻抗层，以减少泄露电流；Si掺杂的n-Al0.25Ga0.75N层可以减少P型杂质对二维电子气的散射，提高二维电子气的迁移率，在靠近n-GaN沟道层一侧的Al0.25Ga0.75N隔离层未掺杂，其作为隔离层，避免了Si掺杂对二维电子气的散射。本申请的外延结构通过Al0.25Ga0.75N隔离层和n-Al0.25Ga0.75N层的设置，能够有效的提升二维电子气的迁移率。
实际运用时，本申请的外延结构能够有效改善GaN基HEMT器件的电学性能。
于本发明其中一实施例中，所述衬底为蓝宝石、GaN、SiC或Si。
于本发明其中一实施例中，所述GaN恢复层的厚度为2～3μm。
于本发明其中一实施例中，所述非故意C掺杂GaN高阻层的厚度为1～3μm。
于本发明其中一实施例中，所述非故意C掺杂GaN高阻层的外延生长的条件为：70Torr的压强，TMGa流量为615sccm，NH3流量为30slm，温度为1020～1070℃。
于本发明其中一实施例中，所述n-GaN沟道层的厚度为50～200nm，所述n-GaN沟道层的掺杂浓度为1×1016cm-3～1×1017cm-3；
所述n-GaN沟道层的外延生长的条件为：160Torr的压强，TMGa的流量为425sccm，NH3的流量为55slm，温度1090～1105℃。
于本发明其中一实施例中，所述AlN插入层的厚度为1nm。
于本发明其中一实施例中，所述Al0.25Ga0.75N隔离层的厚度为3～18nm；所述n-Al0.25Ga0.75N层的厚度为2～17nm，所述n-Al0.25Ga0.75N层的掺杂浓度为5×1017cm-3～5×1018cm-3。
于本发明其中一实施例中，所述Al0.25Ga0.75N隔离层和n-Al0.25Ga0.75N层的厚度和为20nm。
于本发明其中一实施例中，所述AlN帽层的厚度为1～5nm。
本发明的有益效果是：AlGaN层用来阻挡蓝宝石衬底的O扩散；非故意C掺杂GaN高阻层是为形成高阻抗层，以减少泄露电流；Si掺杂的n-Al0.25Ga0.75N层可以减少P型杂质对二维电子气的散射，提高二维电子气的迁移率，在靠近n-GaN沟道层一侧的Al0.25Ga0.75N隔离层未掺杂，其作为隔离层，避免了Si掺杂对二维电子气的散射。本申请的外延结构通过Al0.25Ga0.75N隔离层和n-Al0.25Ga0.75N层的设置，能够有效的提升二维电子气的迁移率。
附图说明
图1是用于提升ALGaN/GaN界面处二维电子气的外延结构的示意图；
图2是本申请外延结构Al0.25Ga0.75N/n-Al0.25Ga0.75N厚度为8nm/12nm的AFM测试结果图；
图3是本申请外延结构Al0.25Ga0.75N/n-Al0.25Ga0.75N厚度为8nm/12nm的SEM测试结果图。
图中各附图标记为：
1、衬底；2、AlGaN层；3、GaN恢复层；4、非故意C掺杂GaN高阻层；5、n -GaN沟道层；6、AlN插入层；7、Al0.25Ga0.75N隔离层；8、n-Al0.25Ga0.75N层；9、AlN帽层。
具体实施方式
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本申请实施例的组件可以以各种不同的配置来布置和设计。
在本申请的描述中，需要说明的是，术语“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该申请产品使用时惯常摆放的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。
在本申请的描述中，还需要说明的是，除非另有明确的规定和限定，术语“设置”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
下面结合各附图，对本发明做详细描述。
如图1所示，一种用于提升ALGaN/GaN界面处二维电子气的外延结构，包括：
衬底1；
AlGaN层2，位于衬底1的上表面；
GaN恢复层3，位于AlGaN层2的上表面；
非故意C掺杂GaN高阻层4，位于GaN恢复层3的上表面；
n-GaN沟道层5，位于非故意C掺杂GaN高阻层4的上表面；
AlN插入层6，位于n-GaN沟道层5的上表面；
未掺杂的Al0.25Ga0.75N隔离层7，位于AlN插入层6的上表面；
Si掺杂的n-Al0.25Ga0.75N层8，位于Al0.25Ga0.75N隔离层7的上表面；
AlN帽层9，位于n-Al0.25Ga0.75N层8的上表面。
AlGaN层2用来阻挡蓝宝石衬底的O扩散；非故意C掺杂GaN高阻层4是为形成高阻抗层，以减少泄露电流；Si掺杂的n-Al0.25Ga0.75N层8可以减少P型杂质对二维电子气的散射，提高二维电子气的迁移率，在靠近n-GaN沟道层5一侧的Al0.25Ga0.75N隔离层7未掺杂，其作为隔离层，避免了Si掺杂对二维电子气的散射。本申请的外延结构通过Al0.25Ga0.75N隔离层7和n-Al0.25Ga0.75N层8的设置，能够有效的提升二维电子气的迁移率。
实际运用时，本申请的外延结构能够有效改善GaN基HEMT器件的电学性能。
实际运用时，AlGaN层2的厚度为几十nm，不做特别要求。
于本实施例中，衬底为蓝宝石。于其他实施例中，还可以为GaN、SiC或Si。
于本实施例中，GaN恢复层3的厚度为2～3μm。
于本实施例中，非故意C掺杂GaN高阻层4的厚度为1～3μm。非故意C掺杂GaN高阻层的外延生长的条件可以为：70Torr的压强，TMGa流量为615sccm，NH3流量为30slm，温度为1020～1070℃。
于本实施例中，n-GaN沟道层5的厚度为50～200nm，n-GaN沟道层的掺杂浓度为1×1016cm-3～1×1017cm-3；n-GaN沟道层的外延生长的条件可以为：160Torr的压强，TMGa的流量为425sccm，NH3的流量为55slm，温度1090～1105℃。
于本实施例中，AlN插入层6的厚度为1nm。
于本实施例中，Al0.25Ga0.75N隔离层7的厚度为3-18nm；n-Al0.25Ga0.75N层8的厚度为2～17nm，n-Al0.25Ga0.75N层8的掺杂浓度为5×1017cm-3～5×1018cm-3。
于本实施例中，Al0.25Ga0.75N隔离层7和n-Al0.25Ga0.75N层8的厚度和为20nm。
于本实施例中，AlN帽层9的厚度为1～5nm。
本实施例还公开了一种使用Veeco K-465i在四寸单面抛光蓝宝石上外延器件的结构，以氨气作为N源，TMGa、TMAl、SiH4分别作为Ga源、Al源和n型杂质。首先在蓝宝石材质的衬底上生长一层AlGaN层用来阻挡蓝宝石衬底的O扩散，接着外延2-3μm的GaN恢复层，随后在70Torr的压强下，TMGa流量为615sccm，NH3流量为30slm，温度为1020-1070℃外延1-3μm的非故意C掺杂高阻层。随后将压力上升到160Torr，温度增加到1090-1105℃，TMGa和NH3的流量分别变为425sccm和55slm，外延50-200nm的n--GaN沟道层(1×1016cm-3～1×1017cm-3)，接着外延1nm的AlN插入层，再外延一层未掺杂的Al0.25Ga0.75N隔离层和一层Si掺杂的n-Al0.25Ga0.75N层(5×1017cm-3～5×1018cm-3)，最后在顶部外延一层1nm的AlN帽层来调节应力。实际运用时AlN帽层的厚度可以为1～5nm。
如图2和3所示，为外延结构Al0.25Ga0.75N/n-Al0.25Ga0.75N厚度为8nm/12nm的AFM测试结果图和SEM测试结果图。本实施例对于不同厚度Al0.25Ga0.75N层和n-Al0.25Ga0.75N层对二维电子气迁移率的影响，我们准备了四组外延实验并通过ECOPIA公司的HMS-3000hall测试系统表征其二维电子气的迁移率，测试结构如下表所示。
本申请的外延结构通过设置Al0.25Ga0.75N隔离层和n-Al0.25Ga0.75N层，能够有效的提升二维电子气的迁移率，且实际运用时，通过调整二者的厚度能够调节具体的值。
以上所述仅为本发明的优选实施例，并非因此即限制本发明的专利保护范围，凡是运用本发明说明书及附图内容所作的等效结构变换，直接或间接运用在其他相关的技术领域，均同理包括在本发明的保护范围内。
Claims (10)
1.一种用于提升AlGaN/GaN界面处二维电子气的外延结构，其特征在于，包括：
衬底；
AlGaN层，位于所述衬底的上表面；
GaN恢复层，位于所述AlGaN层的上表面；
非故意C掺杂GaN高阻层，位于所述GaN恢复层的上表面；
n-GaN沟道层，位于所述非故意C掺杂GaN高阻层的上表面；
AlN插入层，位于所述n-GaN沟道层的上表面；
未掺杂的Al0.25Ga0.75N隔离层，位于所述AlN插入层的上表面；
Si掺杂的n-Al0.25Ga0.75N层，位于所述Al0.25Ga0.75N隔离层的上表面；
AlN帽层，位于所述n-Al0.25Ga0.75N层的上表面。
2.如权利要求1所述的用于提升AlGaN/GaN界面处二维电子气的外延结构，其特征在于，所述衬底为蓝宝石、GaN、SiC或Si。
3.如权利要求1所述的用于提升AlGaN/GaN界面处二维电子气的外延结构，其特征在于，所述GaN恢复层的厚度为2～3μm。
4.如权利要求1所述的用于提升AlGaN/GaN界面处二维电子气的外延结构，其特征在于，所述非故意C掺杂GaN高阻层的厚度为1～3μm。
5.如权利要求4所述的用于提升AlGaN/GaN界面处二维电子气的外延结构，其特征在于，所述非故意C掺杂GaN高阻层的外延生长的条件为：70Torr的压强，TMGa流量为615sccm，NH3流量为30slm，温度为1020～1070℃。
6.如权利要求1所述的用于提升AlGaN/GaN界面处二维电子气的外延结构，其特征在于，所述n-GaN沟道层的厚度为50～200nm，所述n-GaN沟道层的掺杂浓度为1×1016cm-3～1×1017cm-3；
所述n-GaN沟道层的外延生长的条件为：160Torr的压强，TMGa的流量为425sccm，NH3的流量为55slm，温度1090～1105℃。
7.如权利要求1所述的用于提升AlGaN/GaN界面处二维电子气的外延结构，其特征在于，所述AlN插入层的厚度为1nm。
8.如权利要求1所述的用于提升AlGaN/GaN界面处二维电子气的外延结构，其特征在于，所述Al0.25Ga0.75N隔离层的厚度为3～18nm；所述n-Al0.25Ga0.75N层的厚度为2～17nm，所述n-Al0.25Ga0.75N层的掺杂浓度为5×1017cm-3～5×1018cm-3。
9.如权利要求8所述的用于提升AlGaN/GaN界面处二维电子气的外延结构，其特征在于，所述Al0.25Ga0.75N隔离层和n-Al0.25Ga0.75N层的厚度和为20nm。
10.如权利要求1所述的用于提升AlGaN/GaN界面处二维电子气的外延结构，其特征在于，所述AlN帽层的厚度为1～5m。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310668778.9A CN116884998A (zh) | 2023-06-06 | 2023-06-06 | 用于提升ALGaN/GaN界面处二维电子气的外延结构 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310668778.9A CN116884998A (zh) | 2023-06-06 | 2023-06-06 | 用于提升ALGaN/GaN界面处二维电子气的外延结构 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116884998A true CN116884998A (zh) | 2023-10-13 |
Family
ID=88257584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310668778.9A Pending CN116884998A (zh) | 2023-06-06 | 2023-06-06 | 用于提升ALGaN/GaN界面处二维电子气的外延结构 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116884998A (zh) |
-
2023
- 2023-06-06 CN CN202310668778.9A patent/CN116884998A/zh active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5406452B2 (ja) | 窒化物ベースのトランジスタ及びトランジスタ構造体のキャップ層及び／又は不活性層並びにそれらの製造方法 | |
| US9224596B2 (en) | Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers | |
| US8089097B2 (en) | Homoepitaxial gallium-nitride-based electronic devices and method for producing same | |
| US20070018198A1 (en) | High electron mobility electronic device structures comprising native substrates and methods for making the same | |
| US8350292B2 (en) | Gallium nitride epitaxial crystal, method for production thereof, and field effect transistor | |
| EP3311414B1 (en) | Doped barrier layers in epitaxial group iii nitrides | |
| CN108400159B (zh) | 具有多量子阱高阻缓冲层的hemt外延结构及制备方法 | |
| KR20030023742A (ko) | 질화 인듐 갈륨 채널의 고전자 이동도 트랜지스터 및 그제조 방법 | |
| US20060226413A1 (en) | Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices | |
| CN112133749A (zh) | 一种p型帽层增强型hemt器件及其制备方法 | |
| CN115360236A (zh) | 一种具有高阻缓冲层的GaN HEMT器件及其制备方法 | |
| JP7069584B2 (ja) | 基板生産物の製造方法 | |
| CN110429128B (zh) | 一种低势垒多量子阱高阻缓冲层外延结构及其制备方法 | |
| WO2018098952A1 (zh) | 氮化镓基外延结构、半导体器件及其形成方法 | |
| US8524550B2 (en) | Method of manufacturing semiconductor device and semiconductor device | |
| CN110047924B (zh) | 利用GaN基窄阱多量子阱结构的高阻缓冲层及制备方法 | |
| JP5119644B2 (ja) | Ｉｉｉ−ｖ族化合物半導体エピタキシャルウェハ | |
| CN116884998A (zh) | 用于提升ALGaN/GaN界面处二维电子气的外延结构 | |
| CN114551594A (zh) | 一种外延片、外延片生长方法及高电子迁移率晶体管 | |
| JP2007042936A (ja) | Ｉｉｉ−ｖ族化合物半導体エピタキシャルウェハ | |
| CN213459745U (zh) | 高电子迁移率晶体管外延结构及高电子迁移率晶体管 | |
| CN212010976U (zh) | 一种GaN基外延结构 | |
| US20230015133A1 (en) | Semi-conductor structure and manufacturing method thereof | |
| KR20230090573A (ko) | 다중 스트레인 구조를 가지는 AlGaN/GaN 이종 접합 구조의 고전자 이동도 트랜지스터 소자 | |
| KR20230090574A (ko) | 입체구조를 갖는 AlGaN/GaN 이종 접합 구조의 고전자 이동도 트랜지스터 소자 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |