CN116018897A - 显示装置、显示面板及其制造方法 - Google Patents
显示装置、显示面板及其制造方法 Download PDFInfo
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- CN116018897A CN116018897A CN202180002205.1A CN202180002205A CN116018897A CN 116018897 A CN116018897 A CN 116018897A CN 202180002205 A CN202180002205 A CN 202180002205A CN 116018897 A CN116018897 A CN 116018897A
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- layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 206
- 239000004020 conductor Substances 0.000 claims abstract description 158
- 238000000926 separation method Methods 0.000 claims description 43
- 230000002093 peripheral effect Effects 0.000 claims description 29
- 230000000149 penetrating effect Effects 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 586
- 239000000463 material Substances 0.000 description 27
- 238000005538 encapsulation Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 16
- 238000001914 filtration Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 239000003086 colorant Substances 0.000 description 13
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 239000000969 carrier Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000002356 single layer Substances 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/86—Series electrical configurations of multiple OLEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
一种显示装置、显示面板及其制造方法,显示面板包括:衬底(101);走线层(103),设于衬底(101)一侧;导电屏蔽层(4),与走线层(103)设于衬底(101)的同一侧;平坦层(104),覆盖走线层(103)和导电屏蔽层(4);第一电极层(2),设于平坦层(104)上且包括第一电极(21);第一电极(21)通过第一导体(D1)与一走线层(103)连接;像素定义层(3),覆盖平坦层(104);发光层(5),覆盖像素定义层(103)和第一电极(21)并通过第二导体(D2)与导电屏蔽层(4)连接;第二电极6),覆盖发光层(5)。
Description
PCT国内申请,说明书已公开。
Claims (28)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2021/113639 WO2023019531A1 (zh) | 2021-08-19 | 2021-08-19 | 显示装置、显示面板及其制造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116018897A true CN116018897A (zh) | 2023-04-25 |
Family
ID=85239386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202180002205.1A Pending CN116018897A (zh) | 2021-08-19 | 2021-08-19 | 显示装置、显示面板及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20240215346A1 (zh) |
CN (1) | CN116018897A (zh) |
WO (1) | WO2023019531A1 (zh) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014078399A (ja) * | 2012-10-10 | 2014-05-01 | Rohm Co Ltd | 有機el装置 |
JP6546387B2 (ja) * | 2014-10-28 | 2019-07-17 | 株式会社ジャパンディスプレイ | 表示装置 |
CN109037293B (zh) * | 2018-08-01 | 2021-08-31 | 京东方科技集团股份有限公司 | 显示面板及其制作方法、显示装置 |
CN110993806A (zh) * | 2019-11-06 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | 一种oled显示面板及其制备方法 |
CN212342660U (zh) * | 2020-03-27 | 2021-01-12 | 京东方科技集团股份有限公司 | 显示装置及显示面板 |
CN212182332U (zh) * | 2020-06-23 | 2020-12-18 | 上海视欧光电科技有限公司 | 有机发光显示装置 |
-
2021
- 2021-08-19 CN CN202180002205.1A patent/CN116018897A/zh active Pending
- 2021-08-19 WO PCT/CN2021/113639 patent/WO2023019531A1/zh active Application Filing
- 2021-08-19 US US17/913,789 patent/US20240215346A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20240215346A1 (en) | 2024-06-27 |
WO2023019531A1 (zh) | 2023-02-23 |
WO2023019531A9 (zh) | 2023-05-19 |
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