CN116015041A - Slow start circuit built based on MOSFET (Metal-oxide-semiconductor field Effect transistor) and control method - Google Patents
Slow start circuit built based on MOSFET (Metal-oxide-semiconductor field Effect transistor) and control method Download PDFInfo
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention discloses a slow start circuit built based on a MOSFET (metal-oxide-semiconductor field effect transistor) and a control method thereof, wherein the slow start circuit comprises an instruction input end, a resistor R16, a 12V power supply, a resistor R3606, a triode Q3605, a resistor R3612, a resistor R13, a resistor R11, a capacitor C6, a diode D24, a unidirectional TVS diode D1004, a Schottky diode D23, a resistor R15, a MOS transistor Q7, a resistor R14, a capacitor C15, a resistor R12 and a capacitor C4; by the technical scheme provided by the invention, the application of a low-cost and simple slow start circuit can be realized, and the damage of overshoot current caused in the hot plug and on-off process of equipment to a load circuit can be effectively reduced. The design risk is reduced. The normal work and the stability of the equipment power supply module can be effectively protected.
Description
Technical Field
The invention relates to the field of communication and microwaves, in particular to a slow start circuit built based on MOSFET and a control method.
Background
Slow start circuits are very common in the communication, industrial and microwave fields. On the one hand, the impact current at the moment of normal power-on is effectively reduced. On the other hand, there is a need for more and more devices to support hot plug design (i.e., to plug a subunit circuit of a system with power in a normal operating state of the system, without any influence on the system).
Hot plug typically affects the system in two ways. The following are provided: when in hot plug, the mechanical contact of the connector bounces at the moment of contact or disconnection, and the power supply is oscillated. In the process of the oscillation, the drop of the power supply can be caused to drop to a certain value, the restarting of the system can be caused, or the circuit is in an unstable working state, even when the current is large, the connector can strike fire, and the spontaneous combustion of the board card can be caused.
During hot plug, since a plurality of large-capacity storage capacitors exist in the board card system, the voltages at two ends of the capacitors cannot be suddenly changed according to the storage effect of the capacitors, and the capacitors are short-circuited to the ground (the storage capacitors at the moment are power supply decoupling and filter capacitors) at the moment of plug-in, so that large impact current can occur. And damage to the subsequent circuit is easily caused. Therefore, aiming at the risk of hot plug, the solution can avoid the risk by delaying anti-shake processing or controlling the magnitude of power-on current.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a slow starting circuit built based on a MOSFET (metal oxide semiconductor field effect transistor), which comprises an instruction input end, a resistor R16, a 12V power supply, a resistor R3606, a triode Q3605, a resistor R3612, a resistor R13, a resistor R11, a capacitor C6, a diode D24, a unidirectional TVS diode D1004, a Schottky diode D23, a resistor R15, a MOS (metal oxide semiconductor) tube Q7, a resistor R14, a capacitor C5, a resistor R12 and a capacitor C4;
the 12V power supply is connected with the instruction input end through a resistor R16, the instruction input end is connected with a base electrode of a triode Q3605 through a resistor R3606, the base electrode of the triode Q3605 is grounded through a resistor R3612, an emitter electrode of the triode Q3605 is grounded, a collector electrode of the triode Q3605 is connected with one end of a resistor R11 through a resistor R13, and the other end of the resistor R11 is connected with the 12V power supply; the collector of the triode Q3605 is connected with one end of a capacitor C5 through a resistor R12, the other end of the capacitor C5 is connected with the source electrode of the MOS tube Q7 through a resistor R14, the other end of the capacitor C5 is connected with one end of a capacitor C4 through a resistor R14, and the other end of the capacitor C4 is grounded;
the grid electrode of the MOS tube Q7 is connected with one end of the capacitor C5 through the resistor R15, and the drain electrode of the MOS tube Q7 is connected with a 12V power supply; the capacitor C6 is connected with the resistor R11 in parallel, the Schottky diode D23 is connected with the capacitor C6 in parallel, the cathode of the diode D24 is connected with the anode of the Schottky diode D23, and the cathode of the diode D24 is connected with one end of the resistor R11; the positive electrode of the unidirectional TVS diode D1004 is grounded, and the negative electrode of the unidirectional TVS diode D1004 is connected with a 12V power supply.
According to the slow start circuit control method based on the MOSFET, the slow start circuit control method based on the MOSFET comprises the following steps:
before the main control system sends a CARD_PWR_ENABLE instruction, the power input of the slow start circuit 12V is carried out, the triode Q3605 is cut off, and the Vgs of the MOS tube is 0V; the MOS tube cannot be started, a conducting channel is not formed by Q7, no current is output, and the voltage at two ends of the capacitor C6 is 0;
when the CARD_PWR_ENABLE instruction is sent out, the triode is conducted, vce is 0V, and at the moment of conducting the triode, the voltage at two ends of the capacitor cannot be suddenly changed, so that the resistor R11 is instantaneously shorted, and Va is 12V;
the 12V power supply starts to charge the capacitor C6 through the resistor R11 and the resistor R13, the voltage Vc6 at two ends of the capacitor C6 is gradually increased, and the voltage at the Va point starts to drop until the voltage is stabilized to a set resistor voltage division value of 8V;
|vgs|=12v—va-0.4v, as Va decreases, the|vgs| reaches the on voltage |vth of the MOS transistor, a conducting channel is formed, and the MOS tube enters a linear region from a turn-off region;
when the gate-source voltage continues to increase to |vgs|=4v, the MOS transistor enters a saturation region from the triode region; channel currentIdNo longer follows the Vgs change at this timeronMinimum; satisfy Vds (1)ron*IdChannel currentIdThe change gradually increases from 0 to the maximum load current, thus realizing the function of slow start.
Further, the 0.4V is the voltage difference of the diode D24.
The beneficial effects of the invention are as follows: the invention provides an application of a low-cost and simple slow-start circuit, which can effectively reduce the damage of overshoot current to a load circuit caused in the hot plug and on-off process of equipment. The design risk is reduced. The normal work and the stability of the equipment power supply module can be effectively protected.
Drawings
Fig. 1 is a schematic diagram of a slow start circuit built based on MOSFET tubes.
Detailed Description
The technical solution of the present invention will be described in further detail with reference to the accompanying drawings, but the scope of the present invention is not limited to the following description.
For the purpose of making the technical solution and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the particular embodiments described herein are illustrative only and are not intended to limit the invention, i.e., the embodiments described are merely some, but not all, of the embodiments of the invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present invention. It is noted that relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or apparatus that comprises the element.
The features and capabilities of the present invention are described in further detail below in connection with the examples.
As shown in fig. 1, a slow start circuit built based on MOSFET includes a command input end, a resistor R16, a 12V power supply, a resistor R3606, a triode Q3605, a resistor R3612, a resistor R13, a resistor R11, a capacitor C6, a diode D24, a unidirectional TVS diode D1004, a schottky diode D23, a resistor R15, a MOS transistor Q7, a resistor R14, a capacitor C5, a resistor R12, and a capacitor C4;
the 12V power supply is connected with the instruction input end through a resistor R16, the instruction input end is connected with a base electrode of a triode Q3605 through a resistor R3606, the base electrode of the triode Q3605 is grounded through a resistor R3612, an emitter electrode of the triode Q3605 is grounded, a collector electrode of the triode Q3605 is connected with one end of a resistor R11 through a resistor R13, and the other end of the resistor R11 is connected with the 12V power supply; the collector of the triode Q3605 is connected with one end of a capacitor C5 through a resistor R12, the other end of the capacitor C5 is connected with the source electrode of the MOS tube Q7 through a resistor R14, the other end of the capacitor C5 is connected with one end of a capacitor C4 through a resistor R14, and the other end of the capacitor C4 is grounded;
the grid electrode of the MOS tube Q7 is connected with one end of the capacitor C5 through the resistor R15, and the drain electrode of the MOS tube Q7 is connected with a 12V power supply; the capacitor C6 is connected with the resistor R11 in parallel, the Schottky diode D23 is connected with the capacitor C6 in parallel, the cathode of the diode D24 is connected with the anode of the Schottky diode D23, and the cathode of the diode D24 is connected with one end of the resistor R11; the positive electrode of the unidirectional TVS diode D1004 is grounded, and the negative electrode of the unidirectional TVS diode D1004 is connected with a 12V power supply.
According to the slow start circuit control method based on the MOSFET, the slow start circuit control method based on the MOSFET comprises the following steps:
before the main control system sends a CARD_PWR_ENABLE instruction, the power input of the slow start circuit 12V is carried out, the triode Q3605 is cut off, and the Vgs of the MOS tube is 0V; the MOS tube cannot be started, a conducting channel is not formed by Q7, no current is output, and the voltage at two ends of the capacitor C6 is 0;
when the CARD_PWR_ENABLE instruction is sent out, the triode is conducted, vce is 0V, and at the moment of conducting the triode, the voltage at two ends of the capacitor cannot be suddenly changed, so that the resistor R11 is instantaneously shorted, and Va is 12V;
the 12V power supply starts to charge the capacitor C6 through the resistor R11 and the resistor R13, the voltage Vc6 at two ends of the capacitor C6 is gradually increased, and the voltage at the Va point starts to drop until the voltage is stabilized to a set resistor voltage division value of 8V;
|vgs|=12v—va-0.4v, as Va decreases, the|vgs| reaches the on voltage |vth of the MOS transistor, a conducting channel is formed, and the MOS tube enters a linear region from a turn-off region;
when the gate-source voltage continues to increase to |vgs|=4v, the MOS transistor enters a saturation region from the triode region; channel currentIdNo longer follows the Vgs change at this timeronMinimum; satisfy Vds (1)ron*IdChannel currentIdThe change gradually increases from 0 to the maximum load current, thus realizing the function of slow start.
Further, the 0.4V is the voltage difference of the diode D24.
Specifically, the slow start circuit has a 12V power input before the master control system issues the card_pwr_enable instruction. At this time, the transistor is in an off state because the enable signal is not sent yet. |vgs|=0v for MOS transistors; the MOS tube cannot be started, so that a conducting channel is not formed in Q7 at this time, no current is output, and the voltage at two ends of the capacitor C6 is 0.
2) When the card_pwr_enable command is issued, the transistor is turned on, vce≡0v is in a deep saturation state, and at the moment when the transistor is turned on, the voltage across the capacitor cannot be suddenly changed, so that R11 is instantaneously shorted, equivalent to being turned off, and va=12v. Then the 12V power supply starts to charge C6 through R11 and R13, the voltage Vc6 at two ends of the capacitor C6 gradually increases, and the voltage at the Va point starts to drop until the voltage is stabilized to the set resistance voltage division value of 8V. |vgs|=12v—va-0.4V (0.4V is the voltage difference of diode D24), causing |vgs| to reach the on voltage |vth| (provided according to the device manual) of the MOS transistor as Va decreasesVgsthThe on voltage |vth| of SI4425DDY is 1.2 to 2.5v, and a conductive channel is formed. At the moment, the MOS tube is formed by a turn-off regionInto a linear region (i.e. "variable resistance region") where the circuit is characterized by a currentIdWill continue to increase as |vgs| increases, the action of Vgs widens the conductive channel, and the channel resistanceronAnd (3) reducing. When the gate-source voltage continues to increase to |vgs|=4v (the resistance voltage division value, the capacitor is stabilized, and the capacitor is full), the saturation condition of the MOS transistor is already satisfied, and the MOS transistor has entered the saturation region from the triode region. Channel currentIdHas no longer followed the Vgs change at this timeronMinimum. Satisfy Vds (1)ron*Id. Electric currentIdThe change gradually increases from 0 to the maximum load current. The slow start function is realized.
3) When the power is hot swapped, the CARD PWR ENABLE instruction will go from high back to 0. The triode is cut off, at the moment, the channel is not cut off immediately due to the storage effect of C5 and C6 and the parasitic capacitance of the MOS tube, but a slower cut-off process is provided, and therefore the problem of current impact caused by instant disconnection can be well solved.
The MOSFET switching process is understood, as well as the state in which the MOSFET is in during the switching process. The invention completes the work of the power supply slow start circuit based on the effect of the MOSFET. Understanding the MOSFET turn-on process can better understand the operational characteristics of the present invention. In general, the turn-on process of a MOSFET is understood based on gate charges, the D and S poles of the MOSFET are applied with voltages VDD, when driving turn-on pulses are applied to the G and S poles of the MOSFET, the input capacitance Ciss is charged, the G and S pole voltages Vgs linearly rise and reach a threshold voltage Vgs (th), the drain current id≡0a before Vgs rises to Vgs (th), no drain current flows, and the voltage of Vds remains VDD unchanged. When Vgs reaches Vgs (th), the drain starts to flow a current Id, then Vgs continues to rise, id also rises gradually, vds still keeps VDD rising to the load current maximum value Id when Vgs reaches the miller plateau voltage Vgs (pl), and the voltage of Vds starts to drop from VDD.
The Miller Effect (Miller Effect) refers to the Effect that the distributed capacitance (gate-drain capacitance) between the input and output of a MOSFET amplifies the equivalent input capacitance value under the Effect of inverting amplification.
At the end of the miller stage, the Id current remains Id, the Vds voltage remains Id after the end of the miller stage, which is reduced to a lower value, the Vds voltage continues to decrease, but the slope of the decrease is small, and thus the magnitude of the decrease is small, and finally stabilizes at vds=id×rds (on), so it can be generally considered that the MOSFET is substantially on after the end of the miller stage.
The foregoing is merely a preferred embodiment of the invention, and it is to be understood that the invention is not limited to the form disclosed herein but is not to be construed as excluding other embodiments, but is capable of numerous other combinations, modifications and environments and is capable of modifications within the scope of the inventive concept, either as taught or as a matter of routine skill or knowledge in the relevant art. And that modifications and variations which do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (3)
1. The slow starting circuit based on the MOSFET is characterized by comprising an instruction input end, a resistor R16, a 12V power supply, a resistor R3606, a triode Q3605, a resistor R3612, a resistor R13, a resistor R11, a capacitor C6, a diode D24, a unidirectional TVS diode D1004, a Schottky diode D23, a resistor R15, a MOS tube Q7, a resistor R14, a capacitor C5, a resistor R12 and a capacitor C4;
the 12V power supply is connected with the instruction input end through a resistor R16, the instruction input end is connected with a base electrode of a triode Q3605 through a resistor R3606, the base electrode of the triode Q3605 is grounded through a resistor R3612, an emitter electrode of the triode Q3605 is grounded, a collector electrode of the triode Q3605 is connected with one end of a resistor R11 through a resistor R13, and the other end of the resistor R11 is connected with the 12V power supply; the collector of the triode Q3605 is connected with one end of a capacitor C5 through a resistor R12, the other end of the capacitor C5 is connected with the source electrode of the MOS tube Q7 through a resistor R14, the other end of the capacitor C5 is connected with one end of a capacitor C4 through a resistor R14, and the other end of the capacitor C4 is grounded;
the grid electrode of the MOS tube Q7 is connected with one end of the capacitor C5 through the resistor R15, and the drain electrode of the MOS tube Q7 is connected with a 12V power supply; the capacitor C6 is connected with the resistor R11 in parallel, the Schottky diode D23 is connected with the capacitor C6 in parallel, the cathode of the diode D24 is connected with the anode of the Schottky diode D23, and the cathode of the diode D24 is connected with one end of the resistor R11; the positive electrode of the unidirectional TVS diode D1004 is grounded, and the negative electrode of the unidirectional TVS diode D1004 is connected with a 12V power supply.
2. A method for controlling a slow start circuit based on MOSFET construction according to claim 1, comprising:
before the main control system sends a CARD_PWR_ENABLE instruction, the power input of the slow start circuit 12V is carried out, the triode Q3605 is cut off, and the Vgs of the MOS tube is 0V; the MOS tube cannot be started, a conducting channel is not formed by Q7, no current is output, and the voltage at two ends of the capacitor C6 is 0;
when the CARD_PWR_ENABLE instruction is sent out, the triode is conducted, vce is 0V, and at the moment of conducting the triode, the voltage at two ends of the capacitor cannot be suddenly changed, so that the resistor R11 is instantaneously shorted, and Va is 12V;
the 12V power supply starts to charge the capacitor C6 through the resistor R11 and the resistor R13, the voltage Vc6 at two ends of the capacitor C6 is gradually increased, and the voltage at the Va point starts to drop until the voltage is stabilized to a set resistor voltage division value of 8V;
|vgs|=12v—va-0.4v, as Va decreases, the|vgs| reaches the on voltage |vth of the MOS transistor, a conducting channel is formed, and the MOS tube enters a linear region from a turn-off region;
when the gate-source voltage continues to increase to |vgs|=4v, the MOS transistor enters a saturation region from the triode region; channel currentIdNo longer follows the Vgs change at this timeronMinimum; satisfy Vds (1)ron* Id Channel currentIdThe change gradually increases from 0 to the maximum load current, thus realizing the function of slow start.
3. The control method of the slow start circuit based on the construction of the MOSFET according to claim 2, wherein the voltage difference of the diode D24 is 0.4V.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310257365.1A CN116015041A (en) | 2023-03-17 | 2023-03-17 | Slow start circuit built based on MOSFET (Metal-oxide-semiconductor field Effect transistor) and control method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310257365.1A CN116015041A (en) | 2023-03-17 | 2023-03-17 | Slow start circuit built based on MOSFET (Metal-oxide-semiconductor field Effect transistor) and control method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203027228U (en) * | 2012-12-20 | 2013-06-26 | 深圳Tcl新技术有限公司 | Soft start electronic switch and direct current power supply |
| CN103441660A (en) * | 2013-03-06 | 2013-12-11 | 上海斐讯数据通信技术有限公司 | Direct current power supply slow starting circuit of gateway device |
| CN115642577A (en) * | 2022-09-29 | 2023-01-24 | 华羿微电子股份有限公司 | Hot plug circuit |
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- 2023-03-17 CN CN202310257365.1A patent/CN116015041A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203027228U (en) * | 2012-12-20 | 2013-06-26 | 深圳Tcl新技术有限公司 | Soft start electronic switch and direct current power supply |
| CN103441660A (en) * | 2013-03-06 | 2013-12-11 | 上海斐讯数据通信技术有限公司 | Direct current power supply slow starting circuit of gateway device |
| CN115642577A (en) * | 2022-09-29 | 2023-01-24 | 华羿微电子股份有限公司 | Hot plug circuit |
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Application publication date: 20230425 |