CN108683416B - Load switch control circuit - Google Patents
Load switch control circuit Download PDFInfo
- Publication number
- CN108683416B CN108683416B CN201810824232.7A CN201810824232A CN108683416B CN 108683416 B CN108683416 B CN 108683416B CN 201810824232 A CN201810824232 A CN 201810824232A CN 108683416 B CN108683416 B CN 108683416B
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- voltage
- load switch
- field effect
- control circuit
- effect transistor
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0054—Gating switches, e.g. pass gates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Abstract
The invention discloses a load switch control circuit, which comprises: the device comprises a voltage generation module, a main switching tube, a voltage rising rate acquisition module and a feedback control module; the voltage generation module is used for generating an opening voltage required by opening the main switch; the voltage rising rate acquisition module is used for acquiring the rising rate of the output voltage of the main switch; the feedback control module is used for controlling the starting voltage according to the rising rate so as to control the rising rate. The load switch control circuit can basically and directly control the rising rate of the load terminal voltage in the starting process of the load switch, so that the phenomenon of surge current is eliminated to a great extent, and the system stability is improved.
Description
Technical Field
The present invention relates to the field of semiconductor integrated circuits, and more particularly, to a load switch control circuit.
Background
A load switch is a device commonly used in electronic systems for connecting a power source to a load, and for connecting and isolating the power source from the load, such as for example, powering on and off. The load switch can be integrated with the control circuit or can be a discrete component.
The field effect transistor is a common load switch, however, when the existing field effect transistor is used as a load switch, a condition that a larger surge current is transmitted to flow into a load connected with the load, and a certain damage is caused to the load, wherein the surge current is a phenomenon that the load switch is started instantly, and a larger current is introduced into a load end due to too high starting speed.
In order to avoid the phenomenon of the surge current, a method of slowing down the starting is generally used in the prior art when the load switch is started, so that the voltage output by the load switch is gradually increased, and the starting or starting mode is also called a soft starting mode.
For example, in the prior art, an RC filter circuit is formed by a resistor and a gate capacitor of a field effect transistor to realize soft switching, which essentially controls the gate-source voltage of the field effect transistor, that is, the gate-source voltage of the field effect transistor is slowly increased.
However, the stage with the fastest change of the on-resistance of the load switch, that is, the stage after the gate-source voltage exceeds the threshold value, is just the stage with the fastest change of the gate-source voltage generated by the conventional control method, so that the phenomenon of too fast rise of the load terminal voltage still occurs by the control method in the prior art.
How to provide a load switch control circuit capable of controlling the rising rate of the voltage of the load terminal is a problem to be solved by those skilled in the art.
Disclosure of Invention
In order to solve the problems, the invention provides a load switch control circuit which can basically and directly control the rising rate of the voltage of a load end in the starting process of a load switch, thereby eliminating the phenomenon of surge current to a great extent.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a load switch control circuit, the load switch control circuit comprising: the device comprises a voltage generation module, a main switching tube, a voltage rising rate acquisition module and a feedback control module;
the voltage generation module is used for generating an opening voltage required by opening the main switch;
the voltage rising rate acquisition module is used for acquiring the rising rate of the output voltage of the main switch;
the feedback control module is used for controlling the starting voltage according to the rising rate so as to control the rising rate.
Preferably, in the load switch control circuit, the main switching tube is a first field effect tube;
the drain electrode of the first field effect transistor is used as a voltage input end, and the source electrode of the first field effect transistor is used as a voltage output end.
Preferably, in the load switch control circuit, the first field effect transistor is an N-type field effect transistor.
Preferably, in the load switch control circuit, the voltage generating module includes: a charge pump, a current source, and a diode;
one end of the charge pump is connected with the source electrode of the first field effect transistor, and the other end of the charge pump is connected with the positive electrode of the current source;
the negative electrode of the current source is connected with the grid electrode of the first field effect transistor;
and the cathode of the diode is connected with the cathode of the current source, and the anode of the diode is connected with the source electrode of the first field effect tube.
Preferably, in the load switch control circuit, the diode is a zener diode.
Preferably, in the load switch control circuit, the voltage rising rate acquisition module includes: capacitance and resistance;
one end of the capacitor is connected with the source electrode of the first field effect transistor, and the other end of the capacitor is connected with the feedback control module;
one end of the resistor is connected with the other end of the capacitor, and the other end of the resistor is grounded.
Preferably, in the load switch control circuit, the feedback control module includes: a second field effect transistor;
the grid electrode of the second field effect transistor is connected with the other end of the capacitor;
the source electrode of the second field effect tube is grounded;
and the drain electrode of the second field effect transistor is connected with the negative electrode of the current source.
Preferably, in the load switch control circuit, the second field effect transistor is an N-type field effect transistor.
As can be seen from the above description, the load switch control circuit provided by the present invention includes: the device comprises a voltage generation module, a main switching tube, a voltage rising rate acquisition module and a feedback control module; the voltage generation module is used for generating an opening voltage required by opening the main switch; the voltage rising rate acquisition module is used for acquiring the rising rate of the output voltage of the main switch; the feedback control module is used for controlling the starting voltage according to the rising rate so as to control the rising rate.
According to the load switch control circuit, the rising rate of the output voltage of the main switch tube is collected in real time through the voltage rising rate collection module, the feedback control module controls the starting voltage input to the main switch according to the collected rising rate in real time, and then the rising rate of the output voltage of the main switch tube is controlled, so that the phenomenon of surge current generated in the starting process of the load switch is eliminated to a great extent.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of an application scenario of a load switch according to an embodiment of the present invention;
fig. 2 is a schematic circuit diagram of an application scenario of a load switch according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a load switch generating a surge current according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a load switch control circuit according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of another load switch control circuit according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a load switch control circuit according to another embodiment of the present invention;
fig. 7 is a schematic structural diagram of a load switch control circuit according to another embodiment of the present invention;
fig. 8 is a schematic structural diagram of another load switch control circuit according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, the load switch 11 is mainly used for connecting the power supply 12 and the load 13, so as to realize connection and isolation between the two, as shown in fig. 2, a source electrode of the load switch 11 is connected to a power supply terminal, and a load terminal of the load switch 11 is connected to the load 13, wherein the load 13 is schematically represented by a capacitor C0 and a resistor R0, and it should be noted that the load 13 may also be schematically represented by a combination of an inductance, a capacitance and a resistor, which is not limited in the embodiment of the present invention. As shown in fig. 3, when the load switch 11 is closed instantaneously, how to close too quickly, the voltage rising rate of the load terminal will become very fast, the instantaneous current of the load switch 11 will be very high in a short time, and the current will have a strong impact on the power source 12, the load 13 and the load switch 11 itself, so that the stability of the system is seriously affected.
In order to solve the problems, the invention provides a load switch control circuit which can basically and directly control the rising rate of the load terminal voltage in the starting process of a load switch, thereby eliminating the phenomenon of surge current to a great extent.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a load switch control circuit according to an embodiment of the present invention, where the load switch control circuit includes: a voltage generation module 41, a main switching tube 42, a voltage rising rate acquisition module 43 and a feedback control module 44.
Wherein, the voltage generating module 41 is used for generating an opening voltage required for opening the main switch 42.
The voltage rising rate acquisition module 43 is configured to acquire a rising rate of the output voltage of the main switch 42.
The feedback control module 44 is configured to control the turn-on voltage according to the rising rate, thereby controlling the rising rate.
According to the above description, the load switch control circuit collects the rising rate of the output voltage of the main switch tube in real time through the voltage rising rate collection module, and the feedback control module controls the starting voltage input to the main switch tube according to the collected rising rate in real time, so that the rising rate of the output voltage of the main switch tube is controlled, and the phenomenon of surge current generated in the starting process of the load switch tube is eliminated to a great extent.
Further, as shown in fig. 5, the main switch tube 42 is a first fet M1, and optionally, the first fet M1 is an N-type fet. The drain electrode of the first field effect transistor M1 is used as the voltage input end Vin, and the source electrode of the first field effect transistor M1 is used as the voltage output end Vout.
Specifically, both the P-type field effect transistor and the N-type field effect transistor may be used as the main switching transistor 42, however, the mobility of the N-type field effect transistor is higher than that of the P-type field effect transistor, that is, the on-resistance of the N-type field effect transistor is lower than that of the P-type field effect transistor under the same area, so in the embodiment of the present invention, the N-type field effect transistor is used as the main switching transistor 42.
Further, as shown in fig. 6, the voltage generating module 41 includes: a charge pump IB, a current source 410 and a diode D.
One end of the charge pump 410 is connected to the source of the first fet M1, and the other end of the charge pump 410 is connected to the positive electrode of the current source IB.
The negative electrode of the current source IB is connected to the gate of the first field effect transistor M1.
The cathode of the diode D is connected to the cathode of the current source IB, and the anode of the diode D is connected to the source of the first field effect transistor M1.
Optionally, the diode D is a zener diode.
Specifically, the diode D is configured to perform a clamping function on the gate-source voltage Vgs of the first field-effect transistor M1, that is, when the first field-effect transistor M1 is operating normally, the diode D performs a clamping function on the gate-source voltage Vgs of the first field-effect transistor M1, and the first field-effect transistor M1 generates a gate-source voltage Vgs equal to the clamping voltage under the action of the current source IB.
In the embodiment of the present invention, a zener diode is used as the clamping unit, and for example, a plurality of diodes connected in series in a forward direction may be used as the clamping unit.
Further, as shown in fig. 7, the voltage rising rate acquisition module 43 includes: a capacitor C and a resistor R.
One end of the capacitor C is connected to the source of the first fet M1, and the other end of the capacitor C is connected to the feedback control module 44.
One end of the resistor R is connected with the other end of the capacitor C, and the other end of the resistor R is grounded.
Specifically, by the combination of the capacitor C and the resistor R, a control voltage proportional to the rising slope of the output voltage Vout of the first fet M1 is generated.
Further, as shown in fig. 8, the feedback control module 44 includes: and a second field effect transistor M2.
The gate of the second field effect transistor M2 is connected to the other end of the capacitor C.
And the source electrode of the second field effect transistor M2 is grounded.
The drain electrode of the second field effect transistor M2 is connected to the negative electrode of the current source IB.
Optionally, the second fet M2 is an N-type fet.
Specifically, when the control voltage can control the second fet M2 to be turned on, the source electrode of the second fet M2 is grounded, so as to partially shunt the current generated by the current source IB, thereby controlling the voltage input to the gate electrode of the first fet M1.
The load switch control circuit provided based on the above embodiment of the present invention will be explained below with reference to specific principles thereof.
When the first fet M1 is in the off state, the gate-source voltage Vgs of the first fet M1 is zero, and the voltage Vout of the voltage output terminal is also zero.
When the first fet M1 is in the on state, if there are no modules disclosed in the embodiments of the present invention, the gate-source voltage Vgs of the first fet M1 will rise at a constant rate along with the injection of the current source IB, and the voltage Vout at the voltage output terminal will also rise rapidly.
When the load switch control circuit provided by the embodiment of the invention works, the rising rate of the voltage Vout at the voltage output end is assumed to be dvout/dt, wherein dvout/dt represents the derivative of the voltage Vout at the voltage output end with respect to time and represents the rising rate of the voltage Vout.
Then, the control voltage V1 generated by the capacitor C and the resistor R in the voltage rising rate acquisition module is:
assuming that the second fet M2 operates in the saturation region, the current I of the drain of the second fet M2 is as follows:
wherein u is n For communicating electromigrationAnd the rate Cox is the unit area of the gate oxide layer capacitor, W is the gate width of the second field effect transistor M2, L is the gate length of the second field effect transistor M2, and Vt is the on threshold voltage of the second field effect transistor M2.
Substituting formula (1) into formula (2) yields:
since the total current injected into the gate of the first fet M1 is I1, but in the presence of I, the current Igate actually injected into the gate of the first fet M1 is:
as can be seen from the formula (4), when dvout/dt becomes larger, the current injected into the gate of the first fet M1 is reduced, so as to control and regulate the rising rate of the voltage Vout at the voltage output end, and by setting the values of the regulating capacitor C, the resistor R, the gate width W of the second fet M2, and the gate length L of the second fet M2, flexible control is realized.
According to the description, the load switch control circuit provided by the invention can be used for directly controlling the rising rate of the load terminal voltage in the starting process of the load switch fundamentally, so that the system stability is greatly improved.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in an article or apparatus that comprises such element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A load switch control circuit, the load switch control circuit comprising: the device comprises a voltage generation module, a main switching tube, a voltage rising rate acquisition module and a feedback control module;
the voltage generation module is used for generating an opening voltage required by opening the main switch;
the voltage rising rate acquisition module is used for acquiring the rising rate of the output voltage of the main switch;
the feedback control module is used for controlling the starting voltage according to the rising rate so as to control the rising rate.
2. The load switch control circuit of claim 1 wherein the main switching tube is a first field effect tube;
the drain electrode of the first field effect transistor is used as a voltage input end, and the source electrode of the first field effect transistor is used as a voltage output end.
3. The load switch control circuit of claim 2 wherein the first fet is an N-type fet.
4. The load switch control circuit of claim 2 wherein the voltage generation module comprises: a charge pump, a current source, and a diode;
one end of the charge pump is connected with the source electrode of the first field effect transistor, and the other end of the charge pump is connected with the positive electrode of the current source;
the negative electrode of the current source is connected with the grid electrode of the first field effect transistor;
and the cathode of the diode is connected with the cathode of the current source, and the anode of the diode is connected with the source electrode of the first field effect tube.
5. The load switch control circuit of claim 4 wherein the diode is a zener diode.
6. The load switch control circuit of claim 4 wherein the voltage rise rate acquisition module comprises: capacitance and resistance;
one end of the capacitor is connected with the source electrode of the first field effect transistor, and the other end of the capacitor is connected with the feedback control module;
one end of the resistor is connected with the other end of the capacitor, and the other end of the resistor is grounded.
7. The load switch control circuit of claim 6 wherein the feedback control module comprises: a second field effect transistor;
the grid electrode of the second field effect transistor is connected with the other end of the capacitor;
the source electrode of the second field effect tube is grounded;
and the drain electrode of the second field effect transistor is connected with the negative electrode of the current source.
8. The load switch control circuit of claim 7 wherein the second fet is an N-type fet.
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CN201810824232.7A CN108683416B (en) | 2018-07-25 | 2018-07-25 | Load switch control circuit |
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CN108683416B true CN108683416B (en) | 2023-09-15 |
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CN116388136B (en) * | 2023-06-01 | 2023-07-28 | 盈力半导体(上海)有限公司 | Surge current limiting circuit and chip |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1127855A (en) * | 1997-07-02 | 1999-01-29 | Oki Electric Ind Co Ltd | Rush current preventive circuit |
DE10236304A1 (en) * | 2002-08-08 | 2004-02-19 | Hella Kg Hueck & Co. | Circuit arrangement for control and monitoring of electrical lighting devices in trailer vehicles, has protective diode connected between load side connection of each power switch and common line |
CN101241639A (en) * | 2008-03-14 | 2008-08-13 | 清华大学 | Wireless switch device, system and its communication control method |
CN101685138A (en) * | 2008-09-26 | 2010-03-31 | 浙江师范大学 | Method for testing electrical property of AC generating set |
WO2013138709A1 (en) * | 2012-03-15 | 2013-09-19 | Qualcomm Incorporated | Method and apparatus for load switch controller with tracking to support ddr termination |
CN203722508U (en) * | 2014-02-19 | 2014-07-16 | 湖北追日电气股份有限公司 | Off-grid photovoltaic inverter suitable for impact loads |
KR101431382B1 (en) * | 2013-05-28 | 2014-08-18 | 주식회사 이노피아테크 | Circuit of limiting load rush current in direct current input-part having inductive load |
CN203788203U (en) * | 2014-04-29 | 2014-08-20 | 西北师范大学 | PWM double closed-loop electric bicycle speed regulation control system |
CN104071100A (en) * | 2014-07-22 | 2014-10-01 | 安徽江淮汽车股份有限公司 | Energy management system for high power loads |
CN104347627A (en) * | 2014-09-18 | 2015-02-11 | 成都星芯微电子科技有限公司 | Field effect transistor charging-based semiconductor starting device and manufacturing process |
CN104362149A (en) * | 2014-09-18 | 2015-02-18 | 成都星芯微电子科技有限公司 | Semiconductor starting device based on spiral polycrystalline silicon field effect transistor charging and manufacturing process of semiconductor starting device |
CN206412997U (en) * | 2016-12-02 | 2017-08-15 | 闻广太 | A kind of miniature low-power consumption height driving microwave sensor load switch |
WO2018000517A1 (en) * | 2016-06-28 | 2018-01-04 | 上海晶曦微电子科技有限公司 | Power management circuit |
CN108123596A (en) * | 2017-12-20 | 2018-06-05 | 上海艾为电子技术股份有限公司 | A kind of NMOS switch tube drive circuit |
CN207586783U (en) * | 2017-10-21 | 2018-07-06 | 国神光电科技(上海)有限公司 | A kind of electronic device for current source control |
CN208707612U (en) * | 2018-07-25 | 2019-04-05 | 上海艾为电子技术股份有限公司 | A kind of load switch control circuit |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160261261A1 (en) * | 2015-03-04 | 2016-09-08 | GLF Integrated Power, Inc. | Methods and Apparatus for a Burst Mode Charge Pump Load Switch |
US10135432B2 (en) * | 2016-09-07 | 2018-11-20 | Texas Instruments Incorporated | Methods and apparatus for low current control for a power connection |
-
2018
- 2018-07-25 CN CN201810824232.7A patent/CN108683416B/en active Active
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1127855A (en) * | 1997-07-02 | 1999-01-29 | Oki Electric Ind Co Ltd | Rush current preventive circuit |
DE10236304A1 (en) * | 2002-08-08 | 2004-02-19 | Hella Kg Hueck & Co. | Circuit arrangement for control and monitoring of electrical lighting devices in trailer vehicles, has protective diode connected between load side connection of each power switch and common line |
CN101241639A (en) * | 2008-03-14 | 2008-08-13 | 清华大学 | Wireless switch device, system and its communication control method |
CN101685138A (en) * | 2008-09-26 | 2010-03-31 | 浙江师范大学 | Method for testing electrical property of AC generating set |
WO2013138709A1 (en) * | 2012-03-15 | 2013-09-19 | Qualcomm Incorporated | Method and apparatus for load switch controller with tracking to support ddr termination |
KR101431382B1 (en) * | 2013-05-28 | 2014-08-18 | 주식회사 이노피아테크 | Circuit of limiting load rush current in direct current input-part having inductive load |
CN203722508U (en) * | 2014-02-19 | 2014-07-16 | 湖北追日电气股份有限公司 | Off-grid photovoltaic inverter suitable for impact loads |
CN203788203U (en) * | 2014-04-29 | 2014-08-20 | 西北师范大学 | PWM double closed-loop electric bicycle speed regulation control system |
CN104071100A (en) * | 2014-07-22 | 2014-10-01 | 安徽江淮汽车股份有限公司 | Energy management system for high power loads |
CN104347627A (en) * | 2014-09-18 | 2015-02-11 | 成都星芯微电子科技有限公司 | Field effect transistor charging-based semiconductor starting device and manufacturing process |
CN104362149A (en) * | 2014-09-18 | 2015-02-18 | 成都星芯微电子科技有限公司 | Semiconductor starting device based on spiral polycrystalline silicon field effect transistor charging and manufacturing process of semiconductor starting device |
WO2018000517A1 (en) * | 2016-06-28 | 2018-01-04 | 上海晶曦微电子科技有限公司 | Power management circuit |
CN206412997U (en) * | 2016-12-02 | 2017-08-15 | 闻广太 | A kind of miniature low-power consumption height driving microwave sensor load switch |
CN207586783U (en) * | 2017-10-21 | 2018-07-06 | 国神光电科技(上海)有限公司 | A kind of electronic device for current source control |
CN108123596A (en) * | 2017-12-20 | 2018-06-05 | 上海艾为电子技术股份有限公司 | A kind of NMOS switch tube drive circuit |
CN208707612U (en) * | 2018-07-25 | 2019-04-05 | 上海艾为电子技术股份有限公司 | A kind of load switch control circuit |
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