CN103441660A - Direct current power supply slow starting circuit of gateway device - Google Patents

Direct current power supply slow starting circuit of gateway device Download PDF

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Publication number
CN103441660A
CN103441660A CN2013100721829A CN201310072182A CN103441660A CN 103441660 A CN103441660 A CN 103441660A CN 2013100721829 A CN2013100721829 A CN 2013100721829A CN 201310072182 A CN201310072182 A CN 201310072182A CN 103441660 A CN103441660 A CN 103441660A
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China
Prior art keywords
gateway
circuit
capacitor
power supply
pmos pipe
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CN2013100721829A
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Chinese (zh)
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CN103441660B (en
Inventor
唐姝旻
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上海斐讯数据通信技术有限公司
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Priority to CN201310072182.9A priority Critical patent/CN103441660B/en
Publication of CN103441660A publication Critical patent/CN103441660A/en
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Abstract

The invention discloses a direct current power supply slow starting circuit of a gateway device, and belongs to a power supply control circuit. The direct current power supply slow starting circuit comprises an anti-shake module and a conduction control tube. The anti-shake module is connected with a power adapter and the conduction control tube respectively, and the conduction control tube is connected with the gateway device and is a PMOS tube. The anti-shake module is connected with the grid electrode and the source electrode of the PMOS tube respectively, and the drain electrode of the PMOS tube is connected with the gateway device. The anti-shake module comprises a first resistor, a second resistor, a first capacitor and a second capacitor. A first divider resistor, the first capacitor and the second capacitor are connected in parallel, one end of a parallel end is connected with the power adapter and the source electrode of the PMOS tube respectively, and the other end of the parallel end is connected with the ground through a second divider resistor. The direct current power supply slow starting circuit has the advantages that the circuit is constructed by discrete passive devices, cost is low, the circuit can be restored and acted many times, delay protection time is more effective, and the circuit can bear larger instant impact currents which are loaded by the household gateway device.

Description

A kind of DC power slow start circuit of gateway device

Technical field

The present invention relates to a kind of power control circuit, relate in particular to a kind of DC power slow start circuit of gateway device.

Background technology

In the Circuits System of home gateway, the excessive impulse current of moment that the moment plug of power port brings all can have influence on the normal operation of equipment and damage electronic devices and components, and the best approach of inhibition impulse current is exactly to utilize the slow startup of voltage to achieve the goal.If unslow starting protection circuit; in the moment of power supply adaptor access; can be due to a large amount of capacitive load of load; electric current causes excessive shock; may cause the damage of components and parts in family gateway equipment or cut off the power supply to the load gateway device because impulse current excessive causes adapter to enter guard mode; product can't be worked, so the circuit module that adds such direct-current power supply slow startup plays good stabilization to the electric power system of family gateway equipment.

The design of soft-start circuit mainly contains at present:

(1) negative tempperature coefficient thermistor (NTC) type soft-start circuit: when the access power supply adaptor, thermistor temp is low, the NTC resistance value ratio is larger, power supply charges to load by NTC, along with continuing of charging process, the NTC temperature continues to increase, and the NTC resistance diminishes gradually, thereby realizes the normal power supply to subordinate's circuit.

(2) current mode soft-start circuit: typical circuit is as Fig. 1, this current mode soft-start circuit mainly detects by IC the electric current that flows through R1 and controls current switching, realize the slow purpose started, this kind of design cost is high, therefore for the home gateway series products of lower cost solution, does not advise using.

For the thermistor that adopts negative temperature coefficient, although can suppress impulse current, but can not be for repeated access power supply adaptor in the short time, for example access for the first time the Circuits System that power supply delays after starting by thermistor and pull out suddenly power supply after normal operation a period of time, access again immediately power supply under the uncooled state of thermistor, thermistor now is low because of uncolled impedance comparison, can not play the effect of good inhibition impulse current, so this scheme temperature influence is larger, belong to the slow implementation that starts of expendable disposable direct voltage in the short time.And, for the 2nd kind of design, need, with IC testing circuit electric current, to realize that complicated cost is relatively high.

Summary of the invention

The invention discloses a kind of DC power slow start circuit of gateway device, in order to overcome can not reusing of existing in technique scheme, with high costs, and can not suppress well the problem that power supply access moment impact electric current produces.

Concrete technical scheme is as follows:

A kind of DC power slow start circuit of gateway device, wherein,

Comprise anti-shake module, the conducting control valve;

Described anti-shake module connects respectively a power supply adaptor and described conducting control valve, and described conducting control valve connects described gateway device;

Described conducting control valve is the PMOS pipe;

Described anti-shake module connects grid and the source electrode that connects respectively described PMOS pipe, and the drain electrode of described PMOS pipe connects described gateway device;

Described anti-shake module comprises the first divider resistance R1, the second divider resistance R2, the first capacitor C 1 and the second capacitor C 2;

Described the first divider resistance R1, the first capacitor C 1 and the second capacitor C 2 parallel connections, an end of parallel connected end connects respectively the source electrode of described power supply adaptor and described PMOS pipe, and the other end is by described the second divider resistance R2 ground connection.

The DC power slow start circuit of above-mentioned gateway device, wherein,

Described direct current soft-start circuit also comprises the 3rd capacitor C 3, the three resistance R 3;

Described the 3rd capacitor C 3 connects the drain electrode of described PMOS pipe, and described the 3rd resistance connects respectively grid and described the 3rd capacitor C 3 of described PMOS pipe.

The DC power slow start circuit of above-mentioned gateway device, wherein,

The appearance value of described the 3rd capacitor C 3 is greater than the input capacitance of described PMOS pipe.

The DC power slow start circuit of above-mentioned gateway device, wherein,

The resistance of described the 3rd resistance is less than the resistance of described the second resistance.

The DC power slow start circuit of above-mentioned gateway device, wherein,

The specified leakage current of described PMOS pipe is higher than the rated current of described gateway device, and the thresholding cut-in voltage of described PMOS pipe at-0.4V between-4V.

The invention has the beneficial effects as follows:

With respect to the prior art scheme; a kind of low cost of building by discrete passive device is provided; can recover repeatedly to act on, and more efficiently direct voltage soft-start circuit of delay protection time, the moment impact electric current that the family gateway equipment load is larger can be born.

The accompanying drawing explanation

The DC power slow start circuit that Fig. 1 is a kind of family gateway equipment;

The electrical block diagram that Fig. 2 is an embodiment of the present invention;

The principle analysis schematic diagram that Fig. 3 is electrical block diagram shown in Fig. 2;

The DC voltage rising time measurement figure that Fig. 4 is electrical block diagram shown in Fig. 2;

The electrical block diagram that Fig. 5 is the another kind of embodiment of the present invention;

The electrical block diagram that Fig. 6 is the another kind of embodiment of the present invention;

The principle analysis schematic diagram that Fig. 7 is electrical block diagram shown in Fig. 6;

Fig. 8 is Fig. 6 DC voltage rising time measurement figure.

Embodiment

Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.

In conjunction with Fig. 2 and the electrical block diagram and the principle analysis schematic diagram thereof that Figure 3 shows that an embodiment of the present invention, wherein, the 220V interchange transfers Vin to through power supply adaptor and uses to family gateway equipment, through soft-start circuit Vout export to home gateway in whole Circuits System use, circuit comprises that the conducting control valve is the PMOS pipe; The first divider resistance R1, the second divider resistance R2, the first capacitor C 1 and the second capacitor C 2; The first divider resistance R1, the first capacitor C 1 and the second capacitor C 2 parallel connections, an end of parallel connected end connects respectively the source electrode 2 of power supply adaptor and PMOS pipe, and the other end is by the second divider resistance R2 ground connection.

When the access power supply adaptor, the C1 both end voltage is 0, not conducting of MOSFET, power supply charges to C1 by R1, R2, charge constant is (R1||R2) * (C1||C2), when the C1 both end voltage reaches the threshold voltage of MOSFET, MOSFET starts conducting, the linear decline of MOSFET pipe Vsd voltage, the linear rising of output voltage, realize the slow startup of circuit, by R1, R2, C1 are set, regulate slow start-up time, the time of one section capacitor charging time delay before the MOSFET conducting is the equal of to open anti-shake effect.After the C1 both end voltage rises to the conduction voltage drop of metal-oxide-semiconductor, metal-oxide-semiconductor just starts conducting, and along with Vds descends, Vout raises gradually, thereby realizes slow the startup.

Be illustrated in figure 5 the embodiment of the DC power slow start circuit of the another kind of gateway device of the present invention, the direct current soft-start circuit also comprises one the 3rd capacitor C 3, the three resistance R 3; The 3rd capacitor C 3 connects the drain electrode of P type mos pipe, and the 3rd resistance R 3 connects respectively grid and the 3rd capacitor C 3 of P type mos pipe.

In conjunction with the electrical block diagram and the principle analysis figure thereof that are respectively this shown in Fig. 6 and Fig. 7 and send out embodiment another kind of, the 12V power supply connecting system of current home gateway main flow of take is example, that the PMOS pipe is selected is KDS6375, its conduction voltage drop Vgs scope-0.4V~-1.5V between, in capacitor C 1, after C2 is full of electricity, R1, the value condition of R2 meets 12V* (R2/R1+R2) > 1.5V.The type selecting of PMOS pipe does not only have model KDS6375, as long as specified leakage current is higher than the electric current of protected product, the device withstand voltage value more than 12V, thresholding cut-in voltage-0.4V<Vth<-PMOS of 4V.

The input voltage of residential gateway product is 12V, mean the variation of input voltage with Vin, voltage Vin maximum is 12V, voltage Vgs is the grid of PMOS pipe Q1 and the voltage between source electrode, and Vth means the conducting cut-in voltage of PMOS, threshold voltage-0.4V of the PMOSKDS6375 selected<Vth<-1.5V, drain current 8A, proof voltage 20V can meet circuit requirements, divider resistance R1, the steady state voltage that R2 obtains get resistance value R1=100K Ω commonly used, R2=200K Ω, can be calculated during stable state, t4 is constantly | Vgs|=4V; The drain electrode (D) that Vds is PMOS pipe Q1 and the voltage between source electrode (S), final steady-state current the rated current of this metal-oxide-semiconductor namely; Vout means the output voltage of soft-start circuit, and the purpose of the embodiment of the present invention is to allow Vout voltage slowly rise to 12V, and namely the slope of t2~t3 is very little, the rising edge rising.Embodiments of the invention add electric capacity C3 and damping resistance R3 between grid leak, this resistance R 3 plays the effect that prevents rush of current, the further prolongation purpose of slow start-up time is played in capacitor C 3 charging time delays, reach the time that extends t2~t3, if between grid leak, do not add the scheme that electric capacity keeps current present situation, as the schematic diagram of Fig. 3 change in voltage can be found out, t2~t3 time is very short, for gate pmos is omitted the very little metal-oxide-semiconductor that living electric capacity does the variation slope of this time period be exactly vertical change do not have slope by.Be illustrated in figure 8 the circuit structure DC voltage rising time measurement schematic diagram of Fig. 6, be 37.6ms slow start-up time, the 12V rising edge does not obviously have the test schematic diagram of Fig. 4 steep, so proved that t2~t3 time period length largely determines the gradient that the soft-start circuit output voltage rises, delay start-up time, so grid leak C3 capacitor's capacity will just can play decisive role much larger than interelectrode capacitance, the capacitor C 3 added, R3 will meet as follows:

Cgd=Crss

Cgs=Ciss-Crss

C3>10*(Cgs+Cgd)=10*(Ciss-Crss+Crss);

R3<<R2

Cgs refers to electric capacity between the grid source electrode, Cgd refers to the grid leak interelectrode capacitance, Ciss refers to the input capacitance of PMOS, Crss refers to the grid leak interelectrode capacitance of PMOS, mark is generally arranged in specifications, and the specifications of managing KDS6375 at PMOS can obtain Ciss=2694pF, Crss=229pF, so C3 > > 2694Pf, choose damping resistance R3=270R and the interelectrode capacitance C3=0.01uF of regular size.Q1, C3, the device that R3 meets following condition all can be used as substitute materials, all can play effect preferably:

1.C3>10*(Cgs+Cgd)=10*(Ciss-Crss+Crss);

2.R3<<R2

3.PMOS the type selecting of pipe does not only have model KDS6375, as long as specified leakage current is higher than the electric current of protected product, the device withstand voltage value more than 12V, thresholding cut-in voltage-0.4V<Vth<-PMOS of 4V.

Be illustrated in figure 7 the principle analysis schematic diagram of electrical block diagram shown in Fig. 6, described the change procedure of each voltage of soft-start circuit:

0~t1: along with the access of home gateway 12V power supply adaptor, circuit is first given Q1 grid source capacitor charging, when capacitor C 1||C2 both end voltage be Vgs while reaching the threshold voltage Vth of Q1 conducting Q1 start conducting, start to have leakage current Ids, the Vds voltage difference 12V that remains unchanged, Vout is 0V.

T1~t2: in this stage, the t1 point starts metal-oxide-semiconductor and starts conducting, and along with the rising of Vin, Vgs raises, and leakage current Ids rises, and when rising to the load current maximum, during the t2 time point, it is the constant current district of metal-oxide-semiconductor that Ids keeps constant, according to formula it is constant that this Vgs starts to keep when t2.

This stage of t2~t3, fixing invariable gate source voltage Vgs value was labeled as Vp, along with Vin raises, grid current was all charged to gate leakage capacitance (C3||Crss) by damping resistance R3, so grid current vin (t) is illustrated in the value (t2<t<t3) of t voltage of input during the moment, the people is that the C3 capacitor's capacity that adds is much larger than Crss, so the appearance value size of C3 plays a decisive role, so the length in the charging interval of C3 determines the rate of change of drain-source voltage Vds, because during this period of time, gate source voltage keeps constant, so the drain-source voltage rate of change equates with the drain-to-gate voltage rate of change.The present invention utilizes the time drain-source voltage Vds rate of change that extends t2~t3 to reduce the slope in Fig. 7, allow the Vds slow decreasing, Vout=Vin-|Vds|, thereby further delayed the variation slope as schematic diagram 3, Vout just reaches 12V within very short time, reached and made the Vout rising reach the slow purpose started, played good slow startup effect.

T3~t4 gate source voltage starts again to be elevated to steady state voltage 4V under the charging of drive current Ig, and Vds voltage reaches minimum value, the Ids current constant, and all voltage and current states reach stable state.

Therefore; after as Fig. 6, building Circuits System; experimental result is as Fig. 8; be 37.6ms slow start-up time, and the 12V rising edge does not obviously have the slope of change in voltage of Fig. 4 steep, visible; electrical block diagram illustrated in fig. 6 is with respect to the circuit structure shown in Fig. 2; delayed further the time that power supply rises, reached better the effect that suppresses impulse current, suppressed greatly the surge current of power supply access moment generation and protect the home gateway product.

Circuit model of the present invention, utilize the gate leakage capacitance charging delay time of metal-oxide-semiconductor, delay more a kind of circuit implementing scheme of the rise time of Vout voltage, with scheme 1, than thering is the quick effectively slow Starting mode of direct voltage of recovering repeatedly, the slow effect that starts of better direct voltage is arranged.The metal-oxide-semiconductor gate leakage capacitance is exactly the Crss mentioned in our specifications, the charging interval of Crss is exactly the time of metal-oxide-semiconductor Miller platform, when we use metal-oxide-semiconductor as switching tube, the interelectrode capacitance of metal-oxide-semiconductor is that we are unwilling to see, because the charging delay of this interelectrode capacitance is to switching tube operate time, here we utilize this delay effect exactly, artificially increase delay time by the mode that increases interelectrode capacitance, delay more a kind of circuit implementing scheme of the rise time of Vout voltage.Practical application for family gateway equipment; with existing scheme, compare; have more reliability; fast quick-recovery type; strengthen metal-oxide-semiconductor grid leak electrode capacitance by utilization and delay greatly the time that Vout rises; suppress greatly the surge current of power supply access moment generation and protect the home gateway product, build with cheap discrete passive device for whole circuit, saved Financial cost.

The foregoing is only preferred embodiment of the present invention; not thereby limit embodiments of the present invention and protection range; to those skilled in the art; should recognize that being equal to that all utilizations specification of the present invention and diagramatic content done replace and the resulting scheme of apparent variation, all should be included in protection scope of the present invention.

Claims (5)

1. the DC power slow start circuit of a gateway device, is characterized in that,
Comprise anti-shake module, the conducting control valve;
Described anti-shake module connects respectively a power supply adaptor and described conducting control valve, and described conducting control valve connects described gateway device;
Described conducting control valve is the PMOS pipe;
Described anti-shake module connects grid and the source electrode that connects respectively described PMOS pipe, and the drain electrode of described PMOS pipe connects described gateway device;
Described anti-shake module comprises the first divider resistance R1, the second divider resistance R2, the first capacitor C 1 and the second capacitor C 2;
Described the first divider resistance R1, the first capacitor C 1 and the second capacitor C 2 parallel connections, an end of parallel connected end connects respectively the source electrode of described power supply adaptor and described PMOS pipe, and the other end is by described the second divider resistance R2 ground connection.
2. the DC power slow start circuit of gateway device as claimed in claim 1, is characterized in that,
Described direct current soft-start circuit also comprises the 3rd capacitor C 3, the three resistance R 3;
Described the 3rd capacitor C 3 connects the drain electrode of described PMOS pipe, and described the 3rd resistance connects respectively grid and described the 3rd capacitor C 3 of described PMOS pipe.
3. the direct current soft-start circuit of gateway device as claimed in claim 1, is characterized in that,
The appearance value of described the 3rd capacitor C 3 is greater than the input capacitance of described PMOS pipe.
4. the direct current soft-start circuit of gateway device as claimed in claim 1, is characterized in that,
The resistance of described the 3rd resistance is less than the resistance of described the second resistance.
5. the direct current soft-start circuit of gateway device as claimed in claim 1, is characterized in that,
The specified leakage current of described PMOS pipe is higher than the rated current of described gateway device, and the thresholding cut-in voltage of described Pmos pipe at-0.4V between-4V.
CN201310072182.9A 2013-03-06 2013-03-06 A kind of DC power slow start circuit of gateway device CN103441660B (en)

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CN105743346A (en) * 2014-04-23 2016-07-06 广州昂宝电子有限公司 System and method for adjusting output current in power conversion system
CN105785868A (en) * 2016-03-30 2016-07-20 金三立视频科技(深圳)有限公司 Time-delay protection circuit and device
CN107565809A (en) * 2017-09-04 2018-01-09 北京遥测技术研究所 One kind control polymorphic type line lock starter
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CN109617039A (en) * 2018-11-15 2019-04-12 华为技术有限公司 Power receiving equipment and Power over Ethernet system
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US10277132B2 (en) 2008-10-21 2019-04-30 On-Bright Electronics (Shanghai) Co., Ltd. Systems and methods for constant voltage mode and constant current mode in flyback power converters with primary-side sensing and regulation
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US10609778B2 (en) 2011-11-15 2020-03-31 On-Bright Electronics (Shanghai) Co., Ltd. LED lighting systems and methods for constant current control in various operation modes
US10314130B2 (en) 2011-11-15 2019-06-04 On-Bright Electronics (Shanghai) Co., Ltd. LED lighting systems and methods for constant current control in various operation modes
US10548195B2 (en) 2011-11-15 2020-01-28 On-Bright Electronics (Shanghai) Co., Ltd. LED lighting systems and methods for constant current control in various operation modes
US10375787B2 (en) 2011-11-15 2019-08-06 On-Bright Electronics (Shanghai) Co., Ltd. LED lighting systems and methods for constant current control in various operation modes
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CN105743346A (en) * 2014-04-23 2016-07-06 广州昂宝电子有限公司 System and method for adjusting output current in power conversion system
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US10757778B2 (en) 2014-04-23 2020-08-25 Guangzhou On-Bright Electronics Co., Ltd. Systems and methods for output current regulation in power conversion systems
CN105207461A (en) * 2015-09-16 2015-12-30 杭州华为数字技术有限公司 System, method and device for controlling slowly-started circuit
CN105207461B (en) * 2015-09-16 2018-12-25 杭州华为数字技术有限公司 A kind of control system that having delayed circuit, control method and control device
CN105785868A (en) * 2016-03-30 2016-07-20 金三立视频科技(深圳)有限公司 Time-delay protection circuit and device
CN107565809B (en) * 2017-09-04 2019-11-29 北京遥测技术研究所 A kind of control polymorphic type line lock starter
CN107565809A (en) * 2017-09-04 2018-01-09 北京遥测技术研究所 One kind control polymorphic type line lock starter
CN109084448A (en) * 2018-08-23 2018-12-25 奥克斯空调股份有限公司 A kind of air conditioning control method, device and air conditioner
CN109617039A (en) * 2018-11-15 2019-04-12 华为技术有限公司 Power receiving equipment and Power over Ethernet system

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